CN203491265U - High-voltage glass-bead fast recovery diode - Google Patents
High-voltage glass-bead fast recovery diode Download PDFInfo
- Publication number
- CN203491265U CN203491265U CN201320546022.9U CN201320546022U CN203491265U CN 203491265 U CN203491265 U CN 203491265U CN 201320546022 U CN201320546022 U CN 201320546022U CN 203491265 U CN203491265 U CN 203491265U
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- Prior art keywords
- wafer
- fast recovery
- recovery diode
- high pressure
- lead
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- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The utility model proposes a high-voltage glass-bead fast recovery diode which is used for solving problems that the sharp corner of a crystalline grain of a conventional square diode is not easy to protect, and is liable to be damaged under high temperature or high voltage. The diode comprises a wafer. Two sides of the wafer are respectively provided with a soldering lug. The other end of each soldering lug is provided with a lead in a soldering manner, wherein the leads are used for conducting electricity to the wafer. Molybdenum grains are soldered between the wafer and the soldering lugs, and are used for preventing the wafer from being damaged by thermal expansion and contraction. The surface of the wafer is coated with an aluminum film which is used for soldering. The exteriors of the wafer and the soldering lugs are provided with a passivation layer which is made of glass. The number of crystalline grains, which are disposed on the wafer, is two or more. Each crystalline grain is in a circular structure. The leads are made of copper-covered steel. The surface of each lead is coated with a tin film which is used for reducing the oxidation speed of the lead.
Description
Technical field
The utility model relates to a kind of fast recovery diode, relates in particular to a kind of high pressure bead fast recovery diode.
Background technology
The fast recovery diode junction temperature of at present conventional employing glassivation is generally 125 degree, and crystal grain is of a size of square, the drawback that square crystal grain brings is that wedge angle easily sustains damage, and when energising, wedge angle easily punctures, and the fast recovery diode of making high pressure is more difficult; Traditional diode is the directly welding of crystal grain and copper lead-in wire, because the thermal coefficient of expansion of copper lead-in wire and the thermal coefficient of expansion of crystal grain have larger difference, therefore when temperature jump, copper lead-in wire can be to internal stress of crystal grain, when stress is larger, may causes crystal grain to lose efficacy, thereby cause product failure; Like this diode life-span in use short, poor reliability.
Utility model content
The deficiency that the utility model exists for prior art, provides a kind of high pressure bead fast recovery diode, has solved the problem that traditional diode crystal particle corner is difficult for protection, easily damages under high temperature or high pressure.
A kind of high pressure bead fast recovery diode, comprise a wafer, described wafer both sides are respectively provided with a weld tabs, the other end of described each weld tabs is respectively welded with one for connect electric lead-in wire to wafer, is also welded with one for preventing from causing because expanding with heat and contract with cold the molybdenum grain of damage to wafers between described wafer and described weld tabs.
Preferably, the outside of described wafer, molybdenum grain and described weld tabs is also provided with one deck passivation layer, and described passivation layer is glass material.
Preferably, described wafer is provided with two or more crystal grain.
Preferably, described crystal grain is circular configuration.
Preferably, the surface of described crystal grain is coated with one deck aluminium film, and described aluminium film can conveniently weld.
Preferably, described wire surface is coated with one deck for slowing down the tin film of lead-in wire oxidation rate.
Preferably, described lead-in wire is copper covered steel material.
The beneficial effects of the utility model are: crystal grain of the present utility model is for circular, can protect the edge of crystal grain can not scratch, the phenomenon that there will not be wedge angle to puncture during use, wafer surface is aluminized, and is equipped with a molybdenum grain between wafer and weld tabs, adopts molybdenum grain as resilient coating, the thermal coefficient of expansion of molybdenum grain and crystal grain approaches, when temperature jump, can cushion the internal stress of bringing because expanding with heat and contract with cold, guarantee that crystal grain did not lose efficacy, improve greatly the reliability of product; Wafer outside adopts glass as passivation layer simultaneously, and junction temperature can arrive 175 degree.
Accompanying drawing explanation
Fig. 1 is overall structure schematic diagram of the present utility model;
Fig. 2 is the side cross-sectional schematic of the utility model wafer;
Fig. 3 is the schematic top plan view of the utility model crystal grain;
Fig. 4 is the side cross-sectional schematic of the utility model lead-in wire.
Wherein, 1, wafer; 1-1, crystal grain; 2, weld tabs; 3, lead-in wire; 4, molybdenum grain; 5, aluminium film; 6, passivation layer; 7, tin film.
Embodiment
Below in conjunction with accompanying drawing, principle of the present utility model and feature are described, example, only for explaining the utility model, is not intended to limit scope of the present utility model.
A kind of high pressure bead fast recovery diode, comprise a wafer 1, on wafer 1 both sides, be respectively provided with a weld tabs 2, the other end of described each weld tabs 2 is respectively welded with one for connecing electric lead-in wire 3 to wafer 1, is also welded with one for preventing from causing because expanding with heat and contract with cold the molybdenum grain 4 of wafer 1 damage between described wafer 1 and described weld tabs 2.
The outside of described wafer 1, molybdenum grain 4 and described weld tabs 2 is also provided with one deck passivation layer 6, and described passivation layer 6 is glass material.
Described wafer 1 is provided with two or more crystal grain 1-1.
Described crystal grain 1-1 is circular configuration.
The surface of described crystal grain 1-1 is coated with the aluminium film 5 that one deck is convenient to welding.
Described lead-in wire 3 is copper covered steel material, is coated with one deck for slowing down the tin film 7 of lead-in wire 3 oxidation rates on described lead-in wire 3 surfaces.
The foregoing is only preferred embodiment of the present utility model, not in order to limit the utility model, all within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (7)
1. a high pressure bead fast recovery diode, comprise a wafer, described wafer both sides are respectively provided with a weld tabs, the other end of described each weld tabs is respectively welded with one for connect electric lead-in wire to wafer, it is characterized in that: between described wafer and described weld tabs, be also welded with one for preventing from causing because expanding with heat and contract with cold the molybdenum grain of damage to wafers.
2. high pressure bead fast recovery diode according to claim 1, is characterized in that: the outside of described wafer, molybdenum grain and described weld tabs is also provided with one deck passivation layer, and described passivation layer is glass material.
3. high pressure bead fast recovery diode according to claim 2, is characterized in that: described wafer is provided with two or more crystal grain.
4. high pressure bead fast recovery diode according to claim 3, is characterized in that: described crystal grain is circular configuration.
5. high pressure bead fast recovery diode according to claim 4, is characterized in that: the surface of described crystal grain is coated with one deck aluminium film, and described aluminium film can conveniently weld.
6. high pressure bead fast recovery diode according to claim 1, is characterized in that: described wire surface is coated with one deck for slowing down the tin film of lead-in wire oxidation rate.
7. high pressure bead fast recovery diode according to claim 1, is characterized in that: described lead-in wire is copper covered steel material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320546022.9U CN203491265U (en) | 2013-09-03 | 2013-09-03 | High-voltage glass-bead fast recovery diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320546022.9U CN203491265U (en) | 2013-09-03 | 2013-09-03 | High-voltage glass-bead fast recovery diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203491265U true CN203491265U (en) | 2014-03-19 |
Family
ID=50262073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320546022.9U Expired - Fee Related CN203491265U (en) | 2013-09-03 | 2013-09-03 | High-voltage glass-bead fast recovery diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203491265U (en) |
-
2013
- 2013-09-03 CN CN201320546022.9U patent/CN203491265U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140319 Termination date: 20140903 |
|
| EXPY | Termination of patent right or utility model |