CN201323199Y - Energy-saving rectifier diode - Google Patents
Energy-saving rectifier diode Download PDFInfo
- Publication number
- CN201323199Y CN201323199Y CN 200820232812 CN200820232812U CN201323199Y CN 201323199 Y CN201323199 Y CN 201323199Y CN 200820232812 CN200820232812 CN 200820232812 CN 200820232812 U CN200820232812 U CN 200820232812U CN 201323199 Y CN201323199 Y CN 201323199Y
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- CN
- China
- Prior art keywords
- crystal grain
- rectifier diode
- energy
- saving
- diodes
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The utility model relates to an energy-saving rectifier diode which belongs to the field of a semiconductor device. The crystal grain appearance can be applied to the manufacturing of various diodes including axial diodes, patching diodes, high-power diodes and the like. The energy-saving rectifier diode comprises leading wires (1), welding sheets (2), a silica gel (3), a crystal grain (4) and an epoxy resin (5). The crystal grain (4) is arranged between the two welding sheets (2) and is sealed by the silica gel (3), the leading wires (1) are respectively welded at the two ends of the welding sheets (2), and the outermost layers are sealed into one by the epoxy resin (5). The rectifier diode is characterized in that the crystal grain (4) presents a shape of a polygon. Compared with prior art, the energy-saving rectifier diode has the advantages of leading low cost, mitigating point discharge, bearing high reverse voltage, improving high-temperature property and the like. The manufacturing process of the rectifier diode is simple, the crystal grain is cheap, and the price of the crystal grain is only 1/3 to 1/4 of that of a GPP crystal grain with the same specifications, so as to greatly reduce the cost of the rectifier diode.
Description
Technical field
Energy-saving rectifier diode belongs to field of semiconductor devices.Can be applicable to various types of diodes and make, comprise axially, paster, heavy-duty diode etc.
Background technology
Rectifier diode is the most basic semiconductor device, mainly act as and changes alternating current into direct current, is widely used in various electronic circuits.Diode crystal particle mainly contains GPP and O/J two classes.The rectifier diode hot properties that GPP crystal grain is made is good, but crystal grain cost height, the glass passivation layer around the crystal grain makes its effective area reduce to cause forward conduction voltage drop bigger, and electric energy loss is big.O/J crystal grain cost is low, but four jiaos of profile crystal grain bonding areas are little, and the forward voltage drop height is difficult to clean, the corner point discharge, and hot properties is bad.
The utility model content
The technical problems to be solved in the utility model is: overcome the problem that prior art exists, design a kind of cost low, can alleviate point discharge, bear higher revers voltage, improve the energy-saving rectifier diode of hot properties.
The technical scheme that its technical problem that solves the utility model adopts is: this energy-saving rectifier diode, comprise lead-in wire, weld tabs, silica gel, crystal grain and epoxy resin, crystal grain places in the middle of two weld tabs and passes through silica gel sealing, two weld tabs two ends are welding lead respectively, outermost layer is an one by epoxy sealing, it is characterized in that: crystal grain is polygon.
Crystal grain is hexagon.Main effect is to solve the point discharge problem.
Compared with prior art, the beneficial effect that energy-saving rectifier diode of the present utility model had is: choose hexagonal O/J crystal grain, increase lead and be connected area more than 30% with crystal grain, reduce rectifier diode forward voltage drop VF value, its energy consumption in circuit is reduced, reach energy-conservation purpose.O/J hexagonal crystal grain is realized slick and sly edge through pickling, has alleviated point discharge, can bear higher revers voltage, has improved hot properties.This production process is simple, and crystal grain is cheap, and equal specification price is a GPP crystal grain 1/3～1/4 only, greatly reduces the cost of rectifier diode.This crystal grain profile can be applicable to various types of diodes and makes, and comprises axially, paster, heavy-duty diode etc.
Description of drawings
Fig. 1 is the energy-saving rectifier diode structural representation of the utility model;
Fig. 2 is the utility model hexagonal O/J crystal grain contour structures schematic diagram.
Fig. 1～2nd, the most preferred embodiment of the energy-saving rectifier diode of the utility model.Wherein: 1 lead-in wire, 2 weld tabs, 3 silica gel, 4 crystal grain, 5 epoxy resin.
Embodiment
Be described further below in conjunction with Fig. 1～2 energy-saving rectifier diode of pair the utility model:
Shown in Fig. 1～2:
This energy-saving rectifier diode, be made up of lead-in wire 1, weld tabs 2, silica gel 3, crystal grain 4 and epoxy resin 5, crystal grain 4 places in the middle of two weld tabs 2 and by silica gel 3 sealings, two weld tabs, 2 two ends are welding lead 1 respectively, outermost layer is sealed into one by epoxy resin 5, and crystal grain 4 adopts hexagon.Crystal grain 4 can also be designed to polygon.Main effect is to solve the point discharge problem.This crystal grain profile can be applicable to various types of diodes and makes, and comprises axially, paster, heavy-duty diode etc.
Manufacturing process is as follows:
1, crystal grain 4 disks cutting: the hexagonal crystallite dimension that cuts into requirement by specification.
2, lead 1 welding: use the weld tabs of leypewter, lead 1 is connected to (welding temperature more than 300 degree) with crystal grain.
3, crystal grain pickling: corrosion cutting burr, realize that crystal grain 4 is than rounded profile.
4, crystal grain 4 gluings protection: apply silica gel around the crystal grain 4, realize its reverse cut-off characteristics.
5, baking: high temperature (220 ℃) silica gel 3 solidifies.
6, plastic packaging moulding: with epoxy resin 5 plastic packaging moulding.
Claims (2)
1, energy-saving rectifier diode, comprise lead-in wire (1), weld tabs (2), silica gel (3), crystal grain (4) and epoxy resin (5), crystal grain (4) places in the middle of two weld tabs (2) and by silica gel (3) and seals, two weld tabs (2) two ends are welding lead (1) respectively, outermost layer is sealed into one by epoxy resin (5), it is characterized in that: crystal grain (4) is polygon.
2, according to right 1 described energy-saving rectifier diode on request, it is characterized in that: crystal grain (4) is hexagon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200820232812 CN201323199Y (en) | 2008-12-20 | 2008-12-20 | Energy-saving rectifier diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200820232812 CN201323199Y (en) | 2008-12-20 | 2008-12-20 | Energy-saving rectifier diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201323199Y true CN201323199Y (en) | 2009-10-07 |
Family
ID=41160574
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200820232812 Expired - Fee Related CN201323199Y (en) | 2008-12-20 | 2008-12-20 | Energy-saving rectifier diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201323199Y (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101819992A (en) * | 2010-03-31 | 2010-09-01 | 固镒电子(芜湖)有限公司 | Rectifier grain, production method thereof and suction cup mould |
| CN102142371A (en) * | 2010-12-29 | 2011-08-03 | 常州星海电子有限公司 | Process for manufacturing photovoltaic bypass Schottky diode |
| CN102263140A (en) * | 2011-08-10 | 2011-11-30 | 山东沂光电子股份有限公司 | Plastic package power diode and manufacturing technology thereof |
| TWI619566B (en) * | 2015-08-06 | 2018-04-01 | 朋程科技股份有限公司 | Manufacturing method and device of lead line structure of rectifier diode |
-
2008
- 2008-12-20 CN CN 200820232812 patent/CN201323199Y/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101819992A (en) * | 2010-03-31 | 2010-09-01 | 固镒电子(芜湖)有限公司 | Rectifier grain, production method thereof and suction cup mould |
| CN101819992B (en) * | 2010-03-31 | 2012-10-17 | 固镒电子(芜湖)有限公司 | Rectifier grain, production method thereof and suction cup mould |
| CN102142371A (en) * | 2010-12-29 | 2011-08-03 | 常州星海电子有限公司 | Process for manufacturing photovoltaic bypass Schottky diode |
| CN102263140A (en) * | 2011-08-10 | 2011-11-30 | 山东沂光电子股份有限公司 | Plastic package power diode and manufacturing technology thereof |
| TWI619566B (en) * | 2015-08-06 | 2018-04-01 | 朋程科技股份有限公司 | Manufacturing method and device of lead line structure of rectifier diode |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091007 Termination date: 20131220 |