CN203460048U - 磨片机游星片的改良构造 - Google Patents
磨片机游星片的改良构造 Download PDFInfo
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- CN203460048U CN203460048U CN201320582446.0U CN201320582446U CN203460048U CN 203460048 U CN203460048 U CN 203460048U CN 201320582446 U CN201320582446 U CN 201320582446U CN 203460048 U CN203460048 U CN 203460048U
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CN201320582446.0U CN203460048U (zh) | 2013-09-18 | 2013-09-18 | 磨片机游星片的改良构造 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105437078A (zh) * | 2014-09-12 | 2016-03-30 | 南昌欧菲光学技术有限公司 | 研磨盘清洁装置 |
CN113496870A (zh) * | 2020-04-03 | 2021-10-12 | 重庆超硅半导体有限公司 | 一种集成电路用硅片边缘形貌控制方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105437078A (zh) * | 2014-09-12 | 2016-03-30 | 南昌欧菲光学技术有限公司 | 研磨盘清洁装置 |
CN113496870A (zh) * | 2020-04-03 | 2021-10-12 | 重庆超硅半导体有限公司 | 一种集成电路用硅片边缘形貌控制方法 |
CN113496870B (zh) * | 2020-04-03 | 2022-07-26 | 重庆超硅半导体有限公司 | 一种集成电路用硅片边缘形貌控制方法 |
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Effective date of registration: 20180705 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 inside. Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191220 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring road No. 12 in Haitai) Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
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CX01 | Expiry of patent term |
Granted publication date: 20140305 |
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CX01 | Expiry of patent term |