CN203434202U - 高可靠性高效率led灯珠 - Google Patents

高可靠性高效率led灯珠 Download PDF

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CN203434202U
CN203434202U CN201320522366.6U CN201320522366U CN203434202U CN 203434202 U CN203434202 U CN 203434202U CN 201320522366 U CN201320522366 U CN 201320522366U CN 203434202 U CN203434202 U CN 203434202U
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led chip
led lamp
lamp pearl
highly
efficiency led
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Expired - Fee Related
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CN201320522366.6U
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韦运动
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

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Abstract

一种高可靠性高效率LED灯珠，包括LED芯片，所述LED芯片设置于灯杯底部，LED芯片的正负极通过各自的导线分别与LED芯片的正极和负极连接，在所述灯杯内设有荧光体，在所述LED芯片的正极和负极的表面上依次设有镀镍层和镀金层。本实用新型具有不仅导电性能好，而且还不会产生黑班的优点。

Description

高可靠性高效率LED灯珠
技术领域：
本实用新型涉及LED发光技术领域，尤其是一种高可靠性高效率LED灯珠。
背景技术：
目前，目前带有碗杯的LED灯珠主要结构如图1所示，包括LED芯片20放置于灯杯10底部，LED芯片20的正负极通过各自的导线21、22分别与正极23和负极24连接，在所述灯杯10内设有荧光体30。这种LED灯珠在电极的表面一般镀有一层银层，一方面银层可以起到良好的导电性，另一方面银层在灯杯10底部起到反光的作用。但是，由于LED灯珠都存在荧光体30，且LED灯珠工作时会产生较大热量，荧光体30在较长时的高温下会分解出二氧化硫，二氧化硫与银反应生成硫化银，表面的银层就会出现黑斑，一方面影响导电性能，另一个会影响发光效果，再还会对LED灯珠的美观有损害。
实用新型内容：
签于以上背景技术之缺陷，本实用新型提出一种不仅导电性能好，而且还不会产生黑班的高可靠性高效率LED灯珠。
本实用新型的技术方案是：提供一种高可靠性高效率LED灯珠，包括LED芯片，所述LED芯片设置于灯杯底部，LED芯片的正负极通过各自的导线分别与LED芯片的正极和负极连接，在所述灯杯内设有荧光体，在所述LED芯片的正极和负极的表面上依次设有镀镍层和镀金层。
作为对本实用新型的改进，在所述镀镍层和镀金层之间还设有镀钯层。
作为对本实用新型的改进，所述灯杯是用塑料制成的。
作为对本实用新型的改进，所述塑料是EMC塑料。
本实用新型具有不仅导电性能好，而且还不会产生黑班的优点。
附图说明：
图1是先前的LED灯珠实施例结构图。
图2是本实用新型的LED灯珠实施例结构图。
具体实施方式：
请参阅图2，图2揭示的是一种高可靠性高效率LED灯珠，包括LED芯片200，所述LED芯片200设置于灯杯100底部，LED芯片200的正负极通过各自的导线210、220分别与LED芯片200的正极230和负极240连接，在所述灯杯100内设有荧光体300，其特征在于：在所述LED芯片200的正极230和负极240的表面上依次设有镀镍层250和镀金层260。
作为对本实用新型的改进，在所述镀镍层250和镀金层260之间还设有镀钯层270。
作为对本实用新型的改进，所述灯杯100是用塑料制成的。
作为对本实用新型的改进，所述塑料是EMC塑料。
当然，以上所述之实施例，只是本实用新型的较佳实例而已，并非来限制本实用新型的实施范围，故凡依本实用新型申请专利范围所述的特征及原理所做的等效变化或修饰，均包括于本实用新型申请专利范围内。

Claims (4)

1.一种高可靠性高效率LED灯珠，包括LED芯片（200），所述LED芯片（200）设置于灯杯（100）底部，LED芯片（200）的正负极通过各自的导线（210、220）分别与LED芯片（200）的正极（230）和负极（240）连接，在所述灯杯（100）内设有荧光体（300），其特征在于：在所述LED芯片（200）的正极（230）和负极（240）的表面上依次设有镀镍层（250）和镀金层（260）。
2.根据权利要求1所述的高可靠性高效率LED灯珠，其特征在于: 在所述镀镍层（250）和镀金层（260）之间还设有镀钯层（270）。
3.根据权利要求1或2所述的高可靠性高效率LED灯珠，其特征在于：所述灯杯（100）是用塑料制成的。
4.根据权利要求3所述的高可靠性高效率LED灯珠，其特征在于：所述塑料是EMC塑料。
CN201320522366.6U 2013-08-26 2013-08-26 高可靠性高效率led灯珠 Expired - Fee Related CN203434202U (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108682612A (zh) * 2018-05-05 2018-10-19 深圳市晶影光技术有限公司 一种高精密度曝光灯

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108682612A (zh) * 2018-05-05 2018-10-19 深圳市晶影光技术有限公司 一种高精密度曝光灯

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