CN203434187U - High-efficiency light-emitting diode (LED) chip - Google Patents
High-efficiency light-emitting diode (LED) chip Download PDFInfo
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- CN203434187U CN203434187U CN201320562066.0U CN201320562066U CN203434187U CN 203434187 U CN203434187 U CN 203434187U CN 201320562066 U CN201320562066 U CN 201320562066U CN 203434187 U CN203434187 U CN 203434187U
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- pin
- electrode
- conductive film
- transparent conductive
- led chip
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- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 3
- 238000000605 extraction Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The utility model discloses a high-efficiency LED chip which comprises a substrate (1), an epitaxial layer (2), a transparent conductive film (3), P electrodes (4) and N electrodes (5). The epitaxial layer is deposited on the upper surface of the substrate, the upper surface of the epitaxial layer is sputtered with the transparent conductive film, a figure formed in the transparent conductive film is vapor-plated with the P electrodes, and the etched epitaxial layer is vapor-plated with the N electrodes; and each P electrode is composed of a circular P Pad and two pins (40), each N electrode is composed of a U-shaped N pad and one pin, each pin of the P electrode comprises a pin II (42) and a pin I (41), and the width of the pin II (42) is lower than that of the pin I (41). The high-efficiency LED chip has the advantages that when an external circuit is connected with the LED chip, the resistance of the P electrodes increases due to the fact that the pins II are narrower than the pins I, current spreads uniformly on the transparent conductive film in the transverse direction, and current reaching a luminescent area of a luminescent layer is increased; and thus, the luminescent area of the LED chip is increased, and the light emission efficiency is improved.
Description
Technical field
The utility model relates to a kind of LED chip, specifically a kind of efficient LED chip.
Background technology
Light-emitting diode (LED) is a kind of solid-state semiconductor device that can be visible ray by electric energy conversion.LED is the advantage such as energy-saving and environmental protection, operating voltage are low, long service life owing to having, and is the main trend of following illumination.
Although the light extraction efficiency of LED has surpassed incandescent lamp and fluorescent lamp, its light extraction efficiency or undesirable, wherein the structure of LED, electrode shape can affect the light extraction efficiency of LED, and wherein the shape of electrode is larger on the impact of LED light extraction efficiency.As depicted in figs. 1 and 2, when external circuit is connected after LED chip, because the live width of P electrode 4 is even, its resistance is relatively little, and electric current easily spreads along electrode direction, electric current is difficult in epitaxial wafer surface horizontal proliferation, make the luminous region of luminescent layer 21 mainly concentrate on the part luminescent layer of electrode below, cause current-crowding effect, CURRENT DISTRIBUTION is inhomogeneous, make LED chip light-emitting area little, light extraction efficiency is low.
Utility model content
The problem existing for above-mentioned prior art, the utility model provides a kind of efficient LED chip, changes CURRENT DISTRIBUTION it is evenly spread, and increases light-emitting area, improves light extraction efficiency.
To achieve these goals, a kind of efficient LED chip of the present utility model, comprise substrate, epitaxial loayer, transparent conductive film, P electrode and N electrode, the upper surface of substrate deposits epitaxial loayer, the upper surface sputter of epitaxial loayer has transparent conductive film, in the figure of offering in transparent conductive film, evaporation has P electrode, on epitaxial loayer after etching, evaporation has N electrode, P electrode consists of circular P Pad and two pins, N electrode consists of N Pad and a pin of U-shaped, and the live width of the pin II of two pins of P electrode is less than the live width of pin I.
Further, the live width of pin II is than the little 2 μ m～4 μ m of the live width of pin I.
Further, the thickness of transparent conductive film is 600～1200.
The beneficial effects of the utility model are to connect after LED chip when external circuit, due to narrow than pin I of the live width of the pin II of P electrode, the resistance of pin II part becomes large, electric current can flow along the little part of resistance, just lateral magnification on transparent conductive film of electric current, makes current spread even, also increases the luminous region of luminescent layer that electric current reaches epitaxial loayer, make LED chip light-emitting area become large, light extraction efficiency improves.
Accompanying drawing explanation
Fig. 1 is the structural representation of the LED chip of prior art;
Fig. 2 is the structural representation of the LED electrode of prior art;
Fig. 3 is the structural representation of LED electrode of the present utility model;
Fig. 4 is the luminous design sketch of the LED chip of prior art;
Fig. 5 is the luminous design sketch of LED chip of the present utility model.
In figure: 1, substrate, 2, epitaxial loayer, 21, luminescent layer, 3, transparent conductive film, 4, P electrode, 40, pin, 41, pin I, 42, pin II, 5, N electrode, 6, light-emitting zone.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in further detail.
As shown in Figure 3, a kind of efficient LED chip of the present utility model, comprise substrate 1, epitaxial loayer 2, transparent conductive film 3, P electrode 4 and N electrode 5, the upper surface of substrate 1 deposits epitaxial loayer 2, the upper surface sputter of epitaxial loayer 2 has transparent conductive film 3, in the figure of offering in transparent conductive film 3, evaporation has P electrode 4, on epitaxial loayer 2 after etching, evaporation has N electrode 5, P electrode 4 consists of circular P Pad and two pins 40, N electrode 5 consists of N Pad and a pin of U-shaped, the live width of the pin II 42 of two pins 40 of P electrode 4 is less than the live width of pin I 41.
When external circuit is connected after LED chip, because the pin II of P electrode is narrower than pin I, the resistance of pin II part becomes large, electric current can flow along the little part of resistance, just lateral magnification on transparent conductive film 3 of electric current, makes current spread even, also increases the luminous region of luminescent layer 21 that electric current reaches epitaxial loayer 2, make LED chip light-emitting area become large, light extraction efficiency improves.
As shown in Figure 4, in existing LED chip, the pin live width of P electrode is that light-emitting zone 6 is distributed in 1/3 place of pin uniformly; As shown in Figure 5, in LED chip of the present utility model, the live width of the pin II 42 of P electrode 4 is than the little 2 μ m～4 μ m of the live width of pin I 41, and its light-emitting zone 6 is distributed in 1/2 place of pin, and light-emitting zone 6 obviously increases accordingly.
In making LED chip technique of the present utility model, adopt sputter coating method on P electrode 4, to plate tin indium oxide (ITO) film to form transparent conductive film 3, the thickness of this film is 600～1200, make the blue light light extraction efficiency of wavelength 450nm～460nm best, and transparent conductive film 3 is carried out to 450 ℃～600 ℃ annealing in process, the resistivity of transparent conductive film 3 is obviously reduced, resistance reduces, electric current lateral magnification faster on transparent conductive film 3, electric current is spread equably, the light-emitting zone 6 of luminescent layer 21 increases, luminous intensity strengthens.
Claims (3)
1. an efficient LED chip, comprise substrate (1), epitaxial loayer (2), transparent conductive film (3), P electrode (4) and N electrode (5), the upper surface of substrate (1) deposits epitaxial loayer (2), the upper surface sputter of epitaxial loayer (2) has transparent conductive film (3), in the figure of offering in transparent conductive film (3), evaporation has P electrode (4), the upper evaporation of epitaxial loayer after etching (2) has N electrode (5), described P electrode (4) consists of circular P Pad and two pins (40), described N electrode (5) consists of N Pad and a pin of U-shaped, it is characterized in that, the live width of the pin II (42) of two pins (40) of described P electrode (4) is less than the live width of pin I (41).
2. efficient LED chip according to claim 1, is characterized in that, the live width of described pin II (42) is than the little 2 μ m～4 μ m of the live width of pin I (41).
3. efficient LED chip according to claim 1 and 2, is characterized in that, the thickness of described transparent conductive film (3) is 600～1200.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320562066.0U CN203434187U (en) | 2013-09-10 | 2013-09-10 | High-efficiency light-emitting diode (LED) chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320562066.0U CN203434187U (en) | 2013-09-10 | 2013-09-10 | High-efficiency light-emitting diode (LED) chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203434187U true CN203434187U (en) | 2014-02-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320562066.0U Expired - Fee Related CN203434187U (en) | 2013-09-10 | 2013-09-10 | High-efficiency light-emitting diode (LED) chip |
Country Status (1)
| Country | Link |
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| CN (1) | CN203434187U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129247A (en) * | 2020-01-03 | 2020-05-08 | 厦门三安光电有限公司 | Semiconductor light-emitting element |
-
2013
- 2013-09-10 CN CN201320562066.0U patent/CN203434187U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129247A (en) * | 2020-01-03 | 2020-05-08 | 厦门三安光电有限公司 | Semiconductor light-emitting element |
| CN111129247B (en) * | 2020-01-03 | 2022-04-12 | 厦门三安光电有限公司 | Semiconductor light-emitting element |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140212 Termination date: 20140910 |
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| EXPY | Termination of patent right or utility model |