CN203414222U - Device for improving detection sensitivity of pressure sensor - Google Patents
Device for improving detection sensitivity of pressure sensor Download PDFInfo
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- CN203414222U CN203414222U CN201320418297.4U CN201320418297U CN203414222U CN 203414222 U CN203414222 U CN 203414222U CN 201320418297 U CN201320418297 U CN 201320418297U CN 203414222 U CN203414222 U CN 203414222U
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- power supply
- pressure transducer
- grid
- drain electrode
- electrode
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Abstract
The utility model discloses a device for improving detection sensitivity of pressure sensor. A right grid electrode, a left drain electrode and a right drain electrode of a trajectory deflection transistor of the device are respectively connected with a positive electrode of a first power supply, a positive electrode of a second power supply and a positive electrode of a third power supply. A left grid electrode of the trajectory deflection transistor is respectively connected with one end of a first resistor and a drain electrode of a first pressure sensor. The other end of the first resistor is connected with a positive electrode of a fourth power supply. A grid electrode of the first pressure sensor is connected with a positive electrode of a fifth power supply. A source electrode of the first pressure sensor is grounded. The right drain electrode of the trajectory deflection transistor is connected with one end of a second resistor and a drain electrode of a second pressure sensor. The other end of the second resistor is connected with a positive electrode of a sixth power supply. A grid electrode of the second pressure sensor is connected with a positive electrode of a seventh power supply. A negative electrode of each of the first power supply, the second power supply, the third power supply, the fourth power supply, the fifth power supply, the sixth power supply and the seventh power supply is grounded. A source electrode of the second pressure sensor is grounded. The device improves the measuring sensitivity of the pressure sensors.
Description
Technical field
The utility model belongs to microelectronics technology, relates to a kind of raising pressure transducer detection sensitivity device.
Background technology
When integrated circuit and computer technology develop rapidly, people just progressively recognize that information pickup device---sensor is not caught up with the development of infotech.Just because of this, the country of advanced technology prosperity all attaches great importance to exploitation sensor technology.The countries such as U.S., day, the Ying, Fa,De He Commonwealth of Independent States (CIS) all classify sensor technology as one of state key exploitation gordian technique as.China also attaches great importance to research and development sensor technology.State Scientific and Technological Commission has determined that " must greatly develop sensor technology; particularly novel sensor technology pioneer field in infotech will be developed " sensor technology has become the important technical basis of new technology revolution and information society in the < < sensor development policies > > white paper of formulating in April, 1987, being the important symbol of modern development in science and technology level, is one of three large pillars of infotech.In numerous sensors, the proportion maximum that pressure transducer is shared, in transducer market, account for 50% market share, be widely used in numerous industries such as water conservancy and hydropower, railway traffic, intelligent building, production automatic control, Aero-Space, military project, petrochemical industry, oil well, electric power, boats and ships, lathe, pipeline.In recent years, along with the research of wide bandgap semiconductor is goed deep into, nitrogen gallium aluminium/GaN high electron mobility transistor (AlGaN/GaN HEMT) sensor that discovery wide bandgap semiconductor gallium nitride (GaN) (energy gap 3.4eV) is made can coolingly at high temperature be surveyed the characteristics such as chemistry, gas, biology, radiation, pressure.It is in the epitaxial loayer sensitive membrane AlGaN/GaN of AlGaN/GaN HEMT device by External Force Acting that AlGaN/GaN HEMT is applied to pressure transducer principle of work, change the polarization effect of epitaxial film materials, thereby change face electron density in AlGaN/GaN HEMT two-dimensional electron gas, the current-responsive of device is changed.But device current response changes not high with external pressure, reduced the sensitivity to input.
Summary of the invention
The utility model, for the deficiencies in the prior art, has proposed a kind of raising pressure transducer detection sensitivity device.
Improve pressure transducer detection sensitivity device, comprise seven power supplys, ballistic deflection transistor, two pressure transducers, two resistance;
The transistorized right grid of ballistic deflection, left drain electrode, right drain electrode respectively with the first power supply V
tD, second source V
lD, the 3rd power supply V
rDpositive pole connect, the first power supply V
tD, second source V
lD, the 3rd power supply V
rDminus earth, the transistorized left grid of ballistic deflection respectively with the first resistance R
d1one end be connected with the drain electrode of the first pressure transducer FET1, the first resistance R
d1the other end and the 4th power supply V
dD1positive pole connect, the 4th power supply V
dD1minus earth, the grid of the first pressure transducer FET1 and the 5th power supply V
g1positive pole connect, the 5th power supply V
g1minus earth, the source ground of the first pressure transducer FET1, the transistorized right drain electrode of ballistic deflection and the second resistance R
d2the drain electrode of one end, the second pressure transducer FET2 connect, the second resistance R
d2the other end and the 6th power supply V
dD2positive pole connect, the 6th power supply V
dD2minus earth, the grid of the second pressure transducer FET2 and the 7th power supply V
g2positive pole connect, the 7th power supply V
g2minus earth, the source ground of the second pressure transducer FET2.
The structure of the first described pressure transducer FET1 is the electrode layer of drain electrode, grid, source electrode composition, is down Al successively
0.27ga
0.73n cap layer, Al
0.27ga
0.73n barrier layer, AlN separation layer, Al
0.04ga
0.96n insert layer, GaN cushion, silicon substrate.
Described GaN buffer layer thickness is 2.5 μ m;
Described Al
0.04ga
0.96n insert layer thickness is 8nm;
Described AlN separation layer thickness is 1nm;
Described Al
0.27ga
0.73n barrier layer thickness is 20nm;
Described Al
0.27ga
0.73n cap layer thickness is 2nm;
Described gate metal is nickel or gold, and source electrode and drain metal are respectively a kind of in titanium, aluminium, nickel, gold, and the grid length of selector is 1 μ m, and grid width is 100 μ m, and between grid and source electrode, grid and drain electrode, distance is all 1 μ m.
The second described pressure sensor structure is identical with the first pressure transducer, and unique difference is that on the silicon substrate of sensitive membrane below of the first pressure transducer, being excavated a length and width is respectively the hole of 100um, and the silicon substrate of the second pressure transducer is not excavated.
Described ballistic deflection transistor has six electrodes, is respectively top-side drain, left drain electrode, right drain electrode, left grid, right grid, source electrode, and electrode is down GaN cap rock, AlGaN barrier layer, GaN cushion, AlN nucleating layer successively, silicon substrate.
Described AlN nucleating layer thickness is 10nm;
Described GaN buffer layer thickness is 2.5 μ m;
Described AlGaN barrier layer thickness is 20nm;
Described GaN depth of cover is 2nm;
Described gate metal is nickel or gold, and source electrode and drain metal are respectively a kind of in titanium, aluminium, nickel, gold,
On epitaxial loayer, carry out photoetching corrosion, etching depth, at 70nm, is produced ballistic deflection transistor; Top drain electrode A/F 30nm, the width 50nm of triangle raceway groove, source channel width 70nm, the spacing 50nm of left and right drain electrode and triangle raceway groove, triangular groove track pitch top-side drain opening part is apart from 10nm, the height 60nm of triangle raceway groove, the spacing 40nm of trench edges and triangle raceway groove, the A/F 70nm of left and right drain electrode.
Described resistance R
d1and R
d2adopt the Ni/Cr resistance of 50 ohm.
Beneficial effect: the utility model, by improving transport velocity and the transistorized amplification of ballistic deflection of charge carrier in ballistic deflection transistor, improves the accuracy of detection of sensor to feeble signal, thereby improved the measurement sensitivity to pressure transducer.
Accompanying drawing explanation
Fig. 1 is the transistorized structural representation of the utility model ballistic deflection;
Fig. 2 is the structural representation of the utility model the first pressure transducer;
Fig. 3 is the circuit diagram of this method.
Embodiment
As shown in Figure 3, a kind of raising pressure transducer detection sensitivity device, comprises seven power supplys, ballistic deflection transistor, two pressure transducers, two resistance;
The transistorized right grid of ballistic deflection, left drain electrode, right drain electrode respectively with the first power supply V
tD, second source V
lD, the 3rd power supply V
rDpositive pole connect, the first power supply V
tD, second source V
lD, the 3rd power supply V
rDminus earth, the transistorized left grid of ballistic deflection respectively with the first resistance R
d1one end be connected with the drain electrode of the first pressure transducer FET1, the first resistance R
d1the other end and the 4th power supply V
dD1positive pole connect, the 4th power supply V
dD1minus earth, the grid of the first pressure transducer FET1 and the 5th power supply V
g1positive pole connect, the 5th power supply V
g1minus earth, the source ground of the first pressure transducer FET1, the transistorized right drain electrode of ballistic deflection and the second resistance R
d2the drain electrode of one end, the second pressure transducer FET2 connect, the second resistance R
d2the other end and the 6th power supply V
dD2positive pole connect, the 6th power supply V
dD2minus earth, the grid of the second pressure transducer FET2 and the 7th power supply V
g2positive pole connect, the 7th power supply V
g2minus earth, the source ground of the second pressure transducer FET2.
As shown in Figure 2, the structure of the first described pressure transducer FET1 is the electrode layer of drain electrode, grid, source electrode composition, is down Al successively
0.27ga
0.73n cap layer, Al
0.27ga
0.73n barrier layer, AlN separation layer, Al
0.04ga
0.96n insert layer, GaN cushion, silicon substrate.
Described GaN buffer layer thickness is 2.5 μ m;
Described Al
0.04ga
0.96n insert layer thickness is 8nm;
Described AlN separation layer thickness is 1nm;
Described Al
0.27ga
0.73n barrier layer thickness is 20nm;
Described Al
0.27ga
0.73n cap layer thickness is 2nm;
Described gate metal is nickel or gold, and source electrode and drain metal are respectively a kind of in titanium, aluminium, nickel, gold, and the grid length of selector is 1 μ m, and grid width is 100 μ m, and between grid and source electrode, grid and drain electrode, distance is all 1 μ m.
The second described pressure sensor structure is identical with the first pressure transducer, and unique difference is that on the silicon substrate of sensitive membrane below of the first pressure transducer, being excavated a length and width is respectively the hole of 100um, and the silicon substrate of the second pressure transducer is not excavated.
As shown in Figure 1, described ballistic deflection transistor has six electrodes, is respectively top-side drain, left drain electrode, right drain electrode, left grid, right grid, source electrode, and electrode is down GaN cap rock, AlGaN barrier layer, GaN cushion, AlN nucleating layer successively, silicon substrate.
Described AlN nucleating layer thickness is 10nm;
Described GaN buffer layer thickness is 2.5 μ m;
Described AlGaN barrier layer thickness is 20nm;
Described GaN depth of cover is 2nm;
Described gate metal is nickel or gold, and source electrode and drain metal are respectively a kind of in titanium, aluminium, nickel, gold,
On epitaxial loayer, carry out photoetching corrosion, etching depth, at 70nm, is produced ballistic deflection transistor; Top drain electrode A/F 30nm, the width 50nm of triangle raceway groove, source channel width 70nm, the spacing 50nm of left and right drain electrode and triangle raceway groove, triangular groove track pitch top-side drain opening part is apart from 10nm, the height 60nm of triangle raceway groove, the spacing 40nm of trench edges and triangle raceway groove, the A/F 70nm of left and right drain electrode.
Described resistance R
d1and R
d2adopt the Ni/Cr resistance of 50 ohm.
Due to GaN high mobility and broad stopband, theory pushes away, and at room temperature, the mean free path of gallium nitride, more than 20nm, can successfully be made the AlGaN/GaN HEMT ballistic deflection transistor based on ballistic effect.GaN ballistic deflection transistor is comprised of source electrode, (left and right) grid, (left and right, top) drain electrode.By changing the voltage of left and right grid, control the electric current from left and right drain-to-source.The change of the transistorized left and right grid voltage of ballistic deflection causes the change of the electric current of left and right drain electrode, by measuring the change of left and right drain current, just can draw the size of measured signal, and because charge carrier transports the impact that is subject to hardly crystal scattering in ballistic deflection transistor, the speed of charge carrier is than the high order of magnitude of general device left and right, response speed to signal is accelerated thereupon, so this device possesses good instantaneity.Pressure transducer is to be realized by AlGaN/GaN HEMT High Electron Mobility Transistor, and under removal gate electrode, mineralization pressure sensitive membrane after substrate, utilizes AlGaN polarization effect with the variation of pressure, controls source-drain current size.The structure of temperature compensator is identical with pressure sensor structure, and still, the silicon substrate under gate electrode is not removed, can mineralization pressure sensitive membrane.During real work, ballistic deflection transistor gate is connected to the drain electrode of sensor.In order to eliminate the impact of temperature on electric current, the transistorized left and right of ballistic deflection grid is connected respectively to the drain electrode of pressure transducer and temperature compensator.The voltage V of sensor
dDthe resistance R of connecting
dbe added in the drain electrode and the transistorized grid of ballistic deflection of sensor.Left side pressure transducer is as sensor to be measured, and the right temperature compensator plays elimination temperature and floats effect, makes measurement result more accurate.The output current of supposing left and right sensor is respectively
i cL ,
i cR (this electric current is less), passes through R
dpressure drop is added on the grid of ballistic deflection transistor left and right, establishes left grid voltage
v gL , right grid voltage is
v gR , the poor △ of left and right grid voltage
v g for V gL -V gR for(
i cL -
i cR )
r d for △
i c r d , the electric field action because grid voltage produces, causes flowing through left drain current
i dL electric current with right drain electrode
i dR difference, the electric field action because grid voltage produces, causes flowing through left drain current
i dL electric current with right drain electrode
i dR difference, so difference between current △
i dS for I dL -I dR for,
k1, K2, K 3 for with device material, the parameter that size and connected mode are relevant, i.e. △
i dS for, i.e. △
i c be exaggerated
doubly, so just the accuracy of detection of small signal has been improved.Can realize like this effect that improves pressure transducer detection sensitivity.
Claims (4)
1. improve pressure transducer detection sensitivity device, comprise seven power supplys, ballistic deflection transistor, two pressure transducers, two resistance;
It is characterized in that: the transistorized right grid of described ballistic deflection, left drain electrode, right drain electrode respectively with the first power supply V
tD, second source V
lD, the 3rd power supply V
rDpositive pole connect, the first power supply V
tD, second source V
lD, the 3rd power supply V
rDminus earth, the transistorized left grid of ballistic deflection respectively with the first resistance R
d1one end be connected with the drain electrode of the first pressure transducer FET1, the first resistance R
d1the other end and the 4th power supply V
dD1positive pole connect, the 4th power supply V
dD1minus earth, the grid of the first pressure transducer FET1 and the 5th power supply V
g1positive pole connect, the 5th power supply V
g1minus earth, the source ground of the first pressure transducer FET1, the transistorized right drain electrode of ballistic deflection and the second resistance R
d2the drain electrode of one end, the second pressure transducer FET2 connect, the second resistance R
d2the other end and the 6th power supply V
dD2positive pole connect, the 6th power supply V
dD2minus earth, the grid of the second pressure transducer FET2 and the 7th power supply V
g2positive pole connect, the 7th power supply V
g2minus earth, the source ground of the second pressure transducer FET2.
2. raising pressure transducer detection sensitivity device according to claim 1, is characterized in that: the structure of the first described pressure transducer FET1 is the electrode layer of drain electrode, grid, source electrode composition, is down Al successively
0.27ga
0.73n cap layer, Al
0.27ga
0.73n barrier layer, AlN separation layer, Al
0.04ga
0.96n insert layer, GaN cushion, silicon substrate;
Described GaN buffer layer thickness is 2.5 μ m;
Described Al
0.04ga
0.96n insert layer thickness is 8nm;
Described AlN separation layer thickness is 1nm;
Described Al
0.27ga
0.73n barrier layer thickness is 20nm;
Described Al
0.27ga
0.73n cap layer thickness is 2nm;
Described gate metal is nickel or gold, and source electrode and drain metal are respectively a kind of in titanium, aluminium, nickel, gold, and the grid length of selector is 1 μ m, and grid width is 100 μ m, and between grid and source electrode, grid and drain electrode, distance is all 1 μ m;
On the silicon substrate of the described below of the sensitive membrane in the first pressure transducer, being excavated a length and width is respectively the hole of 100um;
The second described pressure sensor structure and the difference of the first pressure transducer are that the silicon substrate of the second pressure transducer is not excavated.
3. raising pressure transducer detection sensitivity device according to claim 1, it is characterized in that: described ballistic deflection transistor has six electrodes, be respectively top-side drain, left drain electrode, right drain electrode, left grid, right grid, source electrode, electrode is down GaN cap rock, AlGaN barrier layer, GaN cushion, AlN nucleating layer successively, silicon substrate;
Described AlN nucleating layer thickness is 10nm;
Described GaN buffer layer thickness is 2.5 μ m;
Described AlGaN barrier layer thickness is 20nm;
Described GaN depth of cover is 2nm;
Described gate metal is nickel or gold, and source electrode and drain metal are respectively a kind of in titanium, aluminium, nickel, gold,
On epitaxial loayer, carry out photoetching corrosion, etching depth, at 70nm, is produced ballistic deflection transistor; Top drain electrode A/F 30nm, the width 50nm of triangle raceway groove, source channel width 70nm, the spacing 50nm of left and right drain electrode and triangle raceway groove, triangular groove track pitch top-side drain opening part is apart from 10nm, the height 60nm of triangle raceway groove, the spacing 40nm of trench edges and triangle raceway groove, the A/F 70nm of left and right drain electrode.
4. raising pressure transducer detection sensitivity device according to claim 1, is characterized in that: described resistance R
d1and R
d2adopt the Ni/Cr resistance of 50 ohm.
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|---|---|---|---|
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103344375A (en) * | 2013-07-15 | 2013-10-09 | 杭州电子科技大学 | Device for enhancing detection sensitivity of pressure sensors |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103344375A (en) * | 2013-07-15 | 2013-10-09 | 杭州电子科技大学 | Device for enhancing detection sensitivity of pressure sensors |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140129 Termination date: 20150715 |
|
| EXPY | Termination of patent right or utility model |