CN203800048U - Hydrogen sensor chip based on two-dimensional electron gas - Google Patents
Hydrogen sensor chip based on two-dimensional electron gas Download PDFInfo
- Publication number
- CN203800048U CN203800048U CN201320754832.3U CN201320754832U CN203800048U CN 203800048 U CN203800048 U CN 203800048U CN 201320754832 U CN201320754832 U CN 201320754832U CN 203800048 U CN203800048 U CN 203800048U
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- hydrogen
- electron gas
- dimensional electron
- chip
- substrate
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Abstract
The utility model relates to a hydrogen sensor chip based on two-dimensional electron gas. The hydrogen sensor chip comprises a substrate, and is characterized in that a left chip and a right chip which are separated from each other are arranged on the upper surface of the substrate; the left chip and the right chip comprise GaN layers arranged on the upper surface of the substrate; AlGaN layers are arranged on upper surfaces of the GaN layers; two-dimensional electron gas is formed between the GaN layers and the AlGaN layers; drain metal layers, source metal layers and gate metal layers are formed on upper surfaces of the AlGaN layers in an evaporation manner; a hydrogen isolating layer is grown on the gate metal layer of the right chip; and the hydrogen isolating layer covers the upper surface and side surfaces of the gate metal layer. The hydrogen sensor chip uses a principle that the concentration of a two-dimensional electron gas carrier is affected by longitudinal voltage, the gate metal layer produces different schottky barriers under ionization with different hydrogen concentrations, and the schottky barriers act on the third dimension of two-dimensional electron gas so that electron gas carrier is changed; hydrogen with different concentrations produces different schottky barriers and different electron gas current is measured so that hydrogen concentration is measured.
Description
Technical field
The utility model relates to a kind of hydrogen gas sensor chip, especially a kind of hydrogen gas sensor chip based on two-dimensional electron gas.
Background technology
Hydrogen gas sensor is mainly used in industrial safety field, and it can directly reflect gas concentration and needn't reflect by dividing potential drop.The general induction electrode that oxidation or reduction reaction occur with gas that adopts of existing hydrogen gas sensor forms electric current on external circuit, and the outer gas concentration of the electric current of generation and transducer is proportional, measures current gas content to connect.
The same with most of industry, hydrogen gas sensor also has high competitive.Therefore, hydrogen gas sensor manufacturer usually finds and has improving one's methods of the excellent pad of competition.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of hydrogen gas sensor chip based on two-dimensional electron gas is provided, and reaches the object of test environment density of hydrogen.
The technical scheme providing according to the utility model, the described hydrogen gas sensor chip based on two-dimensional electron gas, comprise substrate, it is characterized in that: left chip and right chip that mutual separation is set in described substrate top surface, left chip and right chip comprise respectively the GaN layer that is arranged on substrate top surface, at GaN layer upper surface, AlGaN layer is set, between GaN layer and AlGaN layer, forms two-dimensional electron gas; In described AlGaN layer upper surface evaporation formation drain metal layer, source metal and gate metal layer respectively; The hydrogen separator of growing in the gate metal layer of described right chip, upper surface and the side of hydrogen separator cover gate metal level.
Described drain metal layer and source metal are Ti/Al or Ti/Al/Ti/Au or Ti/Al/Ni/Au metal level, and drain metal layer and source metal and AlGaN layer form ohmic contact.
Described gate metal layer is Pt metal, and gate metal layer and AlGaN layer form Schottky contacts.
Described hydrogen separator is SiO
2or Si
3n
4.
Described substrate is Sapphire Substrate, Si substrate or SiC substrate.
The principle principle that the utility model utilizes two-dimensional electron gas charge carrier affected by longitudinal voliage, by producing different Schottky barriers at gate metal layer platinum to the ionization of hydrogen, make this Schottky barrier can act on the third dimension direction of two-dimensional electron gas, in restriction two-dimensional electron gas, the channel depth of two-dimensional directional, changes electron gas charge carrier; Variable concentrations hydrogen can produce different Schottky barriers, obtains different electron gas electric currents, thereby goes out the density of hydrogen in environment by different testing currents.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model.
Embodiment
Below in conjunction with concrete accompanying drawing, the utility model is described in further detail.
As shown in Figure 1: the described hydrogen gas sensor chip based on two-dimensional electron gas comprises substrate 1, GaN layer 2, two-dimensional electron gas 3, AlGaN layer 4, drain metal layer 5, source metal 6, gate metal layer 7, hydrogen separator 8, left chip 11, right chip 12 etc.
As shown in Figure 1, the utility model comprises substrate 1, left chip 11 and the right chip 12 of mutual separation are set at substrate 1 upper surface, left chip 11 and right chip 12 comprise respectively the GaN layer 2 that is arranged on substrate 1 upper surface, at GaN layer 2 upper surface, AlGaN layer 4 is set, between GaN layer 2 and AlGaN layer 4, forms two-dimensional electron gas 3; In described AlGaN layer 4 upper surface evaporation formation drain metal layer 5, source metal 6 and gate metal layer 7 respectively; The hydrogen separator 8 of growing in the gate metal layer 7 of described right chip 12, upper surface and the side of hydrogen separator 8 cover gate metal levels 7;
Described drain metal layer 5 and source metal 6 are Ti/Al or Ti/Al/Ti/Au or Ti/Al/Ni/Au metal level, and drain metal layer 5 and source metal 6 form ohmic contact with AlGaN layer 4;
Described gate metal layer 7 is Pt metal, and gate metal layer 7 forms Schottky contacts with AlGaN layer 4;
Described hydrogen separator 8 is SiO
2or Si
3n
4;
Described substrate 1 is Sapphire Substrate, Si substrate or SiC substrate.
Hydrogen gas sensor chip manufacturing proces based on two-dimensional electron gas described in the utility model is as follows: (1) arranges GaN layer 2 at substrate 1 upper surface, at GaN layer 2 upper surface, AlGaN layer 4 is set, and between GaN layer 2 and AlGaN layer 4, can form two-dimensional electron gas 3; (2) on above-mentioned AlGaN layer 4, pass through chemical drying method etching by independent to left chip 11 and right chip 12, i.e. AlGaN layer 4 and the GaN layer 2 of certain area fallen in dry ecthing, until the upper surface of substrate 1; (3) on the AlGaN layer 4 of left chip 11 and right chip 12, evaporation forms drain metal layer 5, source metal 6 and gate metal layer 7 respectively, drain metal layer 5 and source metal 6 are Ti/Al or Ti/Al/Ti/Au or Ti/Al/Ni/Au metal level, by certain annealing conditions, make drain metal layer 5 and source metal 6 form ohmic contact with AlGaN layer 4; Gate metal layer 7 is Pt metal, and gate metal layer 7 is Schottky contacts with AlGaN layer 4; (4) the hydrogen separator 8 of growing in the gate metal layer 7 of right chip 12, described separator 8 is SiO
2this hydrogen separator 8 can be kept apart right chip 12 with hydrogen, initial current when providing density of hydrogen to be zero by the certain voltage between drain metal layer 5 and source metal 6, the electric current of two chips in contrast left and right can obtain the change amount of hydrogen to Two-dimensional electron device electric current.
Operation principle of the present utility model: the utility model profit is by producing different Schottky barriers at gate metal layer platinum to the ionization of hydrogen, make this Schottky barrier can act on the third dimension direction of two-dimensional electron gas, in restriction two-dimensional electron gas, the channel depth of two-dimensional directional, changes electron gas charge carrier; Variable concentrations hydrogen can produce different Schottky barriers, obtains different electron gas electric currents; Thereby go out the density of hydrogen in environment by different testing currents.Be specially: apply identical fixing voltage by the drain metal layer at two chips in left and right and source metal, left side chip obtains the electric current under hydrogen, and the right chip obtains the initial current of chip; Between two electric currents, different difference is exactly the variable concentrations that measures different hydrogen.
Claims (4)
1. the hydrogen gas sensor chip based on two-dimensional electron gas, comprise substrate (1), it is characterized in that: left chip (11) and right chip (12) that mutual separation is set at described substrate (1) upper surface, left chip (11) and right chip (12) comprise respectively the GaN layer (2) that is arranged on substrate (1) upper surface, at GaN layer (2) upper surface, AlGaN layer (4) is set, between GaN layer (2) and AlGaN layer (4), forms two-dimensional electron gas (3); In described AlGaN layer (4) upper surface evaporation formation drain metal layer (5), source metal (6) and gate metal layer (7) respectively; In gate metal layer (7) the upper growth hydrogen separator (8) of described right chip (12), upper surface and the side of hydrogen separator (8) cover gate metal level (7).
2. the hydrogen gas sensor chip based on two-dimensional electron gas as claimed in claim 1, is characterized in that: described gate metal layer (7) is Pt metal, and gate metal layer (7) forms Schottky contacts with AlGaN layer (4).
3. the hydrogen gas sensor chip based on two-dimensional electron gas as claimed in claim 1, is characterized in that: described hydrogen separator (8) is SiO
2or Si
3n
4.
4. the hydrogen gas sensor chip based on two-dimensional electron gas as claimed in claim 1, is characterized in that: described substrate (1) is Sapphire Substrate, Si substrate or SiC substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320754832.3U CN203800048U (en) | 2013-11-25 | 2013-11-25 | Hydrogen sensor chip based on two-dimensional electron gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320754832.3U CN203800048U (en) | 2013-11-25 | 2013-11-25 | Hydrogen sensor chip based on two-dimensional electron gas |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203800048U true CN203800048U (en) | 2014-08-27 |
Family
ID=51382242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320754832.3U Withdrawn - After Issue CN203800048U (en) | 2013-11-25 | 2013-11-25 | Hydrogen sensor chip based on two-dimensional electron gas |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203800048U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579228A (en) * | 2013-11-25 | 2014-02-12 | 江苏新广联科技股份有限公司 | Hydrogen sensor chip based on two-dimensional electron gas |
| CN104634767A (en) * | 2015-03-03 | 2015-05-20 | 厦门大学 | Manufacturing method of gallium nitride (GaN) based resonant cavity gas sensor |
| CN107515235A (en) * | 2016-06-17 | 2017-12-26 | 深圳大学 | A kind of gas integrated sensor chip |
-
2013
- 2013-11-25 CN CN201320754832.3U patent/CN203800048U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579228A (en) * | 2013-11-25 | 2014-02-12 | 江苏新广联科技股份有限公司 | Hydrogen sensor chip based on two-dimensional electron gas |
| CN103579228B (en) * | 2013-11-25 | 2016-01-06 | 江苏新广联科技股份有限公司 | Based on the hydrogen sensor chip of two-dimensional electron gas |
| CN104634767A (en) * | 2015-03-03 | 2015-05-20 | 厦门大学 | Manufacturing method of gallium nitride (GaN) based resonant cavity gas sensor |
| CN104634767B (en) * | 2015-03-03 | 2017-02-22 | 厦门大学 | Manufacturing method of gallium nitride (GaN) based resonant cavity gas sensor |
| CN107515235A (en) * | 2016-06-17 | 2017-12-26 | 深圳大学 | A kind of gas integrated sensor chip |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20140827 Effective date of abandoning: 20160106 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |