CN203382822U - Air exhaust pipeline for controlling back side etching - Google Patents
Air exhaust pipeline for controlling back side etching Download PDFInfo
- Publication number
- CN203382822U CN203382822U CN201320344862.7U CN201320344862U CN203382822U CN 203382822 U CN203382822 U CN 203382822U CN 201320344862 U CN201320344862 U CN 201320344862U CN 203382822 U CN203382822 U CN 203382822U
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- China
- Prior art keywords
- air exhaust
- back side
- controlling
- side etching
- pump
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Abstract
The utility model discloses an air exhaust pipeline for controlling back side etching. According to the air exhaust pipeline, air exhaust holes of uniform size are formed in the air exhaust pipeline, and each air exhaust hole is provided with a valve. According to the air exhaust pipeline for controlling the back side etching, the sensitive, accurate and flexible control on the back side etching is realized through controlling the air exhaust volume of the back face of a silicon wafer and the air exhaust volume of a space above liquid surface; the problems of the existing process methods that the back side etching of various passages is non-uniform and is inaccurate to adjust are effectively solved; confirmed by experiments, after improvement, the back side etching difference (STDEV value) among all transmission passages is reduced obviously, is decreased to about 0.004 from about 0.05 and is reduced by an order of magnitude, so that after improvement, the uniformity of the back side etching is improved obviously, and the method is practical and effective and has very good practicability.
Description
Technical field
The utility model relates to solar cell manufacturing technology field, is specifically related to a kind of pump-line of controlling the back-etching amount.
Background technology
In the solar cell manufacture process process, need the PN junction at silicon chip edge and the back side is removed after diffusion, occur with the situation that prevents battery drain.The lithographic method adopted at present has two kinds of plasma etching and wet etchings.
In wet etching, at first with roller, nitric acid is taken out of to the back side oxidation that roller is contacted with silicon chip, form silicon oxide, then utilize hydrofluoric acid and silicon oxide reacting generating complex hexafluorosilicic acid (H
2siF
6), carve disconnected PN junction, thereby make positive and back side insulation.Generally by back-etching amount (loss of weight etc.), characterize the effect of wet etching.
Generally by regulating roller transfer rate, etching groove temperature and acid concentration several method, realize the control to the back-etching amount.In these three kinds of methods, roller transfer rate simul relation is to the size of positive etch amount; The size of etching groove temperature and the adjusting of acid concentration need the time of growing to reach balance.All can't realize regulating rapidly in time the back-etching amount.
In existing wet etching, back side extraction pipe is general adopts an end hole diameter near total extraction pipe mode less, that increase gradually along with the diameter of the increase pore with total extraction pipe distance to design.This design has caused in transport process near the back-etching amount of the silicon chip of total extraction pipe large, and little away from the back-etching amount of the silicon chip of total extraction pipe, has had a strong impact on the process uniformity that follow-up cell piece is produced.
The utility model content
Goal of the invention: the deficiency existed for prior art, the purpose of this utility model is to provide a kind of pump-line of controlling the back-etching amount, by the exhausting amount of controlling silicon chip back side, liquid level superjacent air space, realizes sensitive to the back-etching amount, accurately, control flexibly.
Technical scheme: in order to realize the foregoing invention purpose, the technical solution adopted in the utility model is:
A kind of for controlling the pump-line of back-etching amount, be provided with aspirating hole of uniform size on described pump-line, be provided with valve on each aspirating hole.
The diameter of described aspirating hole is 0.1mm～50mm.
The distribution density of described aspirating hole on pump-line is 1～2500/cm
2.
The material of described pump-line includes but not limited to PVP, PVDF.
Described valve installation is in outside surface, internal surface or the pipe wall body of pump-line.
Described valve include but not limited to gate valve, stopping valve, butterfly valve, diaphragm valve.
The size of described rate of air sucked in required adopts following methods to control: the exhausting amount size of controlling each ventilation opening by setting total exhausting amount, or control the size of exhausting amount by controlling the ventilation opening size, or change the exhausting amount of each road suction opening simultaneously, or be respectively each road and set different exhausting amount sizes.
Described pump-line is located at silicon chip below, roller side.
Beneficial effect: compared with prior art, of the present utility model for controlling the pump-line of back-etching amount, by the exhausting amount of controlling silicon chip back side, liquid level superjacent air space, realize sensitive to the back-etching amount, accurately, control flexibly.Effectively solve existing processing method Xia Ge road back-etching amount inhomogeneous, the back-etching amount is regulated inaccurate problem.Confirm by experiment, after improving, each transmits back-etching amount difference (STDEV value) between road has significantly and reduces, be reduced to 0.004 left and right by 0.05 left and right, lowered an order of magnitude, illustrate that after improving, the homogeneity of back side etch amount has had obvious improvement, the method is effective, has good practicality.
The accompanying drawing explanation
fig. 1 ispump-line is settled schematic diagram;
Fig. 2 is the structural representation of pump-line.
Embodiment
Below in conjunction with specific embodiment, the utility model is described further.
Embodiment 1
A kind of method of controlling the back-etching amount, control the back-etching amount by the size of controlling rate of air sucked in required.Below silicon chip, roller 3 sides settle pump-lines 2, each pump-line 2 is connected on total pipeline 1, as shown in Figure 1, evenly, and each hole controls the size of open hole while bleeding to aspirating hole 4 sizes on extraction pipe 2 by valve 4, control thus rate of air sucked in required.And can realize size and the inhomogeneity rapid adjusting to the back-etching amount by the control to rate of air sucked in required.
Use special pump-line, its singularity is with the bleed pump-line of hole of even size (0.1mm～50mm), the ventilation opening size when being provided with valve on each aspirating hole and bleeding with control.Can improve handiness and homogeneity that the back-etching amount is controlled.
Ventilation opening size when valve being set in aspirating hole bleeding with control.On pump-line, the diameter of aspirating hole is 0.1mm～50mm; The distribution density of aspirating hole on pump-line is 1～2500/cm
2.The material of pump-line includes but not limited to the corrosion resistant materials such as PVP, PVDF.The valve of controlling the ventilation opening size can be arranged in outside surface, internal surface or the pipe wall body of pump-line.The kind of valve includes but not limited to gate valve, stopping valve, butterfly valve, diaphragm valve etc.
The exhausting amount size of each ventilation opening can be controlled by setting total exhausting amount, also the size of exhausting amount can be controlled by controlling the ventilation opening size; Can change the exhausting amount of each road suction opening simultaneously, also can be respectively each road and set different exhausting amount sizes.
Table 1 is the contrast table of back-etching loss of weight before and after improving, the size that the loss of weight of back-etching can Efficient Characterization back-etching amount.Before relatively improving as can be seen from Table 1, after improving, each transmits back-etching amount difference (STDEV value) between road has significantly and reduces, be reduced to 0.004 left and right by 0.05 left and right, lowered an order of magnitude, illustrate that after improving, the homogeneity of back side etch amount has had obvious improvement, the method is effective.
Claims (5)
1. one kind for controlling the pump-line of back-etching amount, it is characterized in that: be provided with aspirating hole of uniform size on described pump-line, on each aspirating hole, be provided with valve.
2. according to claim 1 for controlling the pump-line of back-etching amount, it is characterized in that: the diameter of described aspirating hole is 0.1mm～50mm.
3. according to claim 1 for controlling the pump-line of back-etching amount, it is characterized in that: the distribution density of described aspirating hole on pump-line is 1～2500/cm
2.
4. according to claim 1 for controlling the pump-line of back-etching amount, it is characterized in that: described valve installation is in outside surface, internal surface or the pipe wall body of pump-line.
5. according to claim 1 for controlling the pump-line of back-etching amount, it is characterized in that: described pump-line is located at silicon chip below, roller side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320344862.7U CN203382822U (en) | 2013-06-17 | 2013-06-17 | Air exhaust pipeline for controlling back side etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320344862.7U CN203382822U (en) | 2013-06-17 | 2013-06-17 | Air exhaust pipeline for controlling back side etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203382822U true CN203382822U (en) | 2014-01-08 |
Family
ID=49871334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320344862.7U Expired - Fee Related CN203382822U (en) | 2013-06-17 | 2013-06-17 | Air exhaust pipeline for controlling back side etching |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203382822U (en) |
-
2013
- 2013-06-17 CN CN201320344862.7U patent/CN203382822U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140108 Termination date: 20180617 |