CN203373421U - MOCVD (Metal Oxide Chemical Vapor Deposition) reaction equipment - Google Patents
MOCVD (Metal Oxide Chemical Vapor Deposition) reaction equipment Download PDFInfo
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- CN203373421U CN203373421U CN201320389770.0U CN201320389770U CN203373421U CN 203373421 U CN203373421 U CN 203373421U CN 201320389770 U CN201320389770 U CN 201320389770U CN 203373421 U CN203373421 U CN 203373421U
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Abstract
The utility model discloses MOCVD (Metal Oxide Chemical Vapor Deposition) reaction equipment. The MOCVD reaction equipment comprises a reaction chamber, primary vapor inlets, vapor exhaust ports, a sheet carrying tray, a heating assembly, a secondary vapor inlet, a manipulator passage, magnetic fluid, a motor, a vacuum pump, a tail gas treatment tank and the like, wherein a first heat insulating tube is arranged in the reaction chamber, and the inside diameter of the first heat insulating tube is smaller than or equal to the diameter of the sheet carrying tray, so that a first chamber, of which the upper circumferential direction is provided with a gap, is formed by the first heat insulating tube and the sheet carrying tray. According to the MOCVD reaction equipment, after protecting gas or cooling gas enters the first chamber, the protecting gas or cooling gas can only pass through the gap and horizontally and outwardly flows along the lower surface of the sheet carrying tray, so that disturbance to a gas field in the reaction chamber caused by the fact that the protecting gas or cooling gas reversely flows relative to main gas flow is prevented.
Description
Technical field
The utility model relates to a kind of chemical vapor depsotition equipment, relates in particular to a kind of MOCVD conversion unit.
Background technology
In the photoelectricity industry, the MOCVD conversion unit is the nucleus equipment of being not only the epitaxial wafer growth, is also the key equipment for preparing compound semiconductor film.The MOCVD reaction chamber, as the core component of equipment, generally comprises reaction chamber, diffuser, heating unit, the equal device of air of exhaust vacuum.
Produce the uniform film of thickness and component, guarantee around substrate uniformly outside temperature, also need to provide a uniform gas field, the air-flow that forms the gas field evenly enters from inlet mouth, from venting port, discharge, before this air-flow does not arrive substrate surface after entering reaction chamber, whether its air-flow velocity, concentration evenly equate, and the alkyls, the hydride that enter reaction chamber whether pre-reaction etc. is arranged is all vital.
Along with the development of technology, basically can guarantee a uniform inlet air flow at present.Current exhaust mode is mainly that reaction chamber is vacuumized, vacuum extractor comprises and is arranged on a reaction chamber bottom vacuum pipe venting hole (hole is greater than φ 63), and the vacuum pump be connected with this venting hole by corrugated tube and ball valve, pressure controller etc.Adopt this device to carry out exhaust and have some defects: the first, main air stream enters from reaction chamber top, because flange in the bottom vacuumizing and exhausting mouth is very large, and be arranged on a side of slide glass dish, main air stream is subject to the valve tube draft of a bias, cause main air stream to arrive air-flow concentration and the speed of each position of substrate surface on the slide glass dish inconsistent, thereby it is even to affect thickness and the component of substrate growing film; Second, shielding gas or cooling gas that reaction chamber flange in the bottom center enters, to enter from lower to upper, and main air stream is to enter from top to bottom in reaction chamber inside, the air-flow of both direction is relative in body of wall, add the exhaust draft of vaccum exhaust outlet of flange in the bottom single side face to the attraction of two air-flows, cause the air-flow confusion in reaction chamber, the even gas field of substrate growth demand has been produced to great destructiveness; The 3rd, the bore of vaccum exhaust outlet is larger, also just larger to the disposable free air delivery of air-flow in cavity, when reaction chamber pressure is down to 20Torr from atmospheric pressure state, open former seconds of vacuum pump, because disposable free air delivery is large, and without any buffering, impact to vacuum pump is very large, has seriously reduced the work-ing life of vacuum pump.
Therefore, how providing the more uniform MOCVD conversion unit in a kind of gas field is industry technical problem urgently to be resolved hurrily.
The utility model content
The utility model, in order to solve reaction chamber reaction gases and shielding gas/cooling gas relative movement in prior art, causes the problem of air-flow confusion, proposes a kind of MOCVD conversion unit.
The MOCVD conversion unit that the utility model proposes comprise sealing reaction chamber, be located at the reaction chamber top primary air inlet, be located at reaction chamber bottom venting port, be located at slide glass dish and heating component on the reaction chamber axle center, be located at the inferior inlet mouth of slide glass dish below, reaction chamber bottom, also comprise the first heat insulation cylinder that is arranged on the heating component outside, slide glass dish below, this first heat insulation cylinder and slide glass dish form a top circumferential direction and establish gapped the first cavity.
In the technical program, can also be at the second heat insulation cylinder of the arranged outside concentric of the first heat insulation cylinder, venting port is between first, second heat insulation cylinder, and be horizontally disposed with all gas dash plates of vacuum between first, second heat insulation cylinder, described vacuum all gas dash plate is provided with the first through hole, and on described the first heat insulation cylinder, vacuum all evenly is provided with the second through hole in the below of gas dash plate.Air-flow velocity in the diameter of the first through hole and quantity and the second heat insulation cylinder is proportional, and the air-flow velocity between the diameter of the second through hole and quantity and the second heat insulation cylinder and reaction chamber inwall is proportional.
Further, venting port can also at least evenly arrange 2.
Further again, the end that inferior inlet mouth is positioned at the reaction chamber bottom also is provided with the magnetic fluid shrouding.
The utility model can not be subject to the impact of other air-flows after having adopted the first heat insulation cylinder to make main air stream enter reaction chamber, has avoided gaseous exchange that the gas field in reaction chamber is caused confusion, for the substrate growth provides a uniform gas field.And a plurality of venting ports evenly are set, air-flow can be disperseed, alleviated the impact of exhaust to vacuum pump, in the work-ing life of having improved vacuum pump, also reduced the noise in the working process simultaneously.The utility model can solve the impact vacuumized whole gas field effectively, has improved greatly the quality of substrate growth.
The accompanying drawing explanation
Below in conjunction with embodiment and accompanying drawing, the utility model is elaborated, wherein:
Fig. 1 is structural representation of the present utility model.
Embodiment
As shown in Figure 1, the MOCVD conversion unit that the utility model one embodiment proposes, mainly comprise sealing reaction chamber 1, be located at the reaction chamber top primary air inlet 2, be located at reaction chamber bottom venting port 3, be located at slide glass dish 4 and heating component 5 on the reaction chamber inner axes, be located at slide glass dish below, reaction chamber bottom inferior inlet mouth 6, be arranged on reaction chamber one side the mechanical manipulator path 10, be located at magnetic fluid and motor 12 below reaction chamber, vacuum pump and vent gas treatment case 13 etc.
In reaction chamber, in the heating component outside, slide glass dish below also is provided with the first heat insulation cylinder 7, the internal diameter of this first heat insulation cylinder is less than or equal to the diameter of slide glass dish, it and slide glass dish form a top circumferential direction and establish gapped the first cavity 14, in the present embodiment, slide glass tray bottom external diameter is more smaller than top external diameter, its cross-sectional shape is a T font, the first heat insulation cylinder just is arranged on the top lower position of slide glass tray bottom one side, just leave like this gap of horizontal direction between the below of slide glass dish and the first heat insulation cylinder, because of stopping of slide glass dish lower surface, shielding gas or cooling gas enter in this chamber from inferior inlet mouth, can only pass through this gap, along slide glass dish lower surface level, outwards flow, finally by vacuum pump, by end flange venting hole, taken away, prevent that shielding gas or cooling gas are with respect to the main air stream countercurrent flow, disorder is caused in gas field in reaction chamber.
In the present embodiment, the second heat insulation cylinder 8 of one concentric can also be set in the outside of the first heat insulation cylinder, make venting port between first, second heat insulation cylinder, and between first, second heat insulation cylinder, the top of venting port can also be horizontally disposed with all gas dash plates 9 of a vacuum, vacuum all evenly is provided with the first through hole on the gas dash plate, the setting of this first through-hole diameter, quantity, the flow velocity that enters the second heat insulation cylinder internal layer chamber with main air stream is proportional.Main air stream is after the substrate surface reaction, with the air-flow that enters the first heat insulation cylinder medial compartment from inferior inlet mouth, mix, by the equal buffering of gas dash plate of vacuum, finally by flange venting hole at the bottom of reaction chamber, by vacuum, originally taken away, through equal air-flows of gas dash plate, be dispersed, flow velocity is cushioned, to the reducing of limit that have the greatest impact of the gas field in reaction chamber.And, the below of whole heat insulation cylinder, lower than the equal installed position of gas dash plate of vacuum, its circumferential direction has a few circle the second through holes, can drain uniformly reactant gases.The diameter of the second through hole, the setting of quantity and adjustment, with the inboard little cavity formed of the second heat insulation cylinder and reaction chamber, and main air stream to flow to the flow velocity of this little cavity proportional.
Venting port can also at least evenly arrange 2, and the internal diameter of venting port is less than or equal to 40mm.In the present embodiment, the vacuum all below of gas dash plate is provided with the venting port that two internal diameters are 40mm, and they are arranged on the same diametric(al) of reaction chamber bottom, and effectively diffusing air current, drain air-flow uniformly.
The end that inferior inlet mouth is positioned at the reaction chamber bottom is provided with the magnetic fluid shrouding; shielding gas or cooling gas pass through time inlet mouth the time; buffering and dispersion through the magnetic fluid shrouding; enter uniformly the first heat insulation cylinder medial compartment; and through the gap between slide glass dish and the first heat insulation cylinder; oriented and ordered exhaust, solved the problem with the main air stream relative current.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all any modifications of doing within spirit of the present utility model and principle, be equal to and replace and improvement etc., within all should being included in protection domain of the present utility model.
Claims (6)
1. a MOCVD conversion unit, the reaction chamber (1), primary air inlet (2), venting port (3), slide glass dish (4), the heating component (5) that comprise sealing, and the inferior inlet mouth (6) of slide glass dish below, reaction chamber bottom, it is characterized in that, the below of the outside of described heating component, slide glass dish is provided with the first heat insulation cylinder (7), and described the first heat insulation cylinder and slide glass dish form a top circumferential direction and establish gapped the first cavity (14).
2. MOCVD conversion unit as claimed in claim 1, it is characterized in that, the outside of described the first heat insulation cylinder is provided with second heat insulation cylinder (8) of concentric, described venting port is between first, second heat insulation cylinder, and between first, second heat insulation cylinder, level is provided with all gas dash plates (9) of vacuum, described vacuum all gas dash plate is provided with the first through hole, and on described the first heat insulation cylinder, vacuum all evenly is provided with the second through hole in the below of gas dash plate.
3. MOCVD conversion unit as claimed in claim 2, it is characterized in that, air-flow velocity in the diameter of described the first through hole and quantity and the second heat insulation cylinder is proportional, and the air-flow velocity between the diameter of described the second through hole and quantity and the second heat insulation cylinder and reaction chamber inwall is proportional.
4. MOCVD conversion unit as described as claim 1 or 3, is characterized in that, described venting port at least evenly is provided with 2.
5. MOCVD conversion unit as claimed in claim 4, is characterized in that, the internal diameter of described venting port is less than or equal to 40mm.
6. MOCVD conversion unit as claimed in claim 5, is characterized in that, the end that described inlet mouth is positioned at bottom reaction chamber is provided with the magnetic fluid shrouding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320389770.0U CN203373421U (en) | 2013-07-02 | 2013-07-02 | MOCVD (Metal Oxide Chemical Vapor Deposition) reaction equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320389770.0U CN203373421U (en) | 2013-07-02 | 2013-07-02 | MOCVD (Metal Oxide Chemical Vapor Deposition) reaction equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203373421U true CN203373421U (en) | 2014-01-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320389770.0U Expired - Lifetime CN203373421U (en) | 2013-07-02 | 2013-07-02 | MOCVD (Metal Oxide Chemical Vapor Deposition) reaction equipment |
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| CN (1) | CN203373421U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104979248A (en) * | 2015-07-09 | 2015-10-14 | 江苏德尔森传感器科技有限公司 | Air supply mechanism for sensor monocrystalline silicon etching apparatus |
| CN108866511A (en) * | 2018-09-04 | 2018-11-23 | 陆挚译 | A kind of chemical vapor deposition unit |
| CN112410754A (en) * | 2020-10-30 | 2021-02-26 | 北京北方华创微电子装备有限公司 | Tail gas device and semiconductor process equipment |
| CN117604494A (en) * | 2024-01-23 | 2024-02-27 | 楚赟精工科技(上海)有限公司 | Chemical vapor deposition equipment |
-
2013
- 2013-07-02 CN CN201320389770.0U patent/CN203373421U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104979248A (en) * | 2015-07-09 | 2015-10-14 | 江苏德尔森传感器科技有限公司 | Air supply mechanism for sensor monocrystalline silicon etching apparatus |
| CN104979248B (en) * | 2015-07-09 | 2018-01-12 | 重庆德尔森传感器技术有限公司 | The mechanism of supplying gas of sensor monocrystalline silicon etching device |
| CN108866511A (en) * | 2018-09-04 | 2018-11-23 | 陆挚译 | A kind of chemical vapor deposition unit |
| CN108866511B (en) * | 2018-09-04 | 2020-08-28 | 金华职业技术学院 | Chemical vapor deposition device |
| CN112410754A (en) * | 2020-10-30 | 2021-02-26 | 北京北方华创微电子装备有限公司 | Tail gas device and semiconductor process equipment |
| CN117604494A (en) * | 2024-01-23 | 2024-02-27 | 楚赟精工科技(上海)有限公司 | Chemical vapor deposition equipment |
| CN117604494B (en) * | 2024-01-23 | 2024-05-17 | 楚赟精工科技(上海)有限公司 | Chemical vapor deposition equipment |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140101 |
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| CX01 | Expiry of patent term |