CN108866511A - A kind of chemical vapor deposition unit - Google Patents
A kind of chemical vapor deposition unit Download PDFInfo
- Publication number
- CN108866511A CN108866511A CN201811027284.8A CN201811027284A CN108866511A CN 108866511 A CN108866511 A CN 108866511A CN 201811027284 A CN201811027284 A CN 201811027284A CN 108866511 A CN108866511 A CN 108866511A
- Authority
- CN
- China
- Prior art keywords
- reaction chamber
- gas
- substrate holder
- vapor deposition
- chemical vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 29
- 238000006243 chemical reaction Methods 0.000 claims abstract description 75
- 230000007246 mechanism Effects 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000007789 sealing Methods 0.000 claims abstract description 32
- 238000009826 distribution Methods 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 241000826860 Trapezium Species 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 85
- 239000011159 matrix material Substances 0.000 abstract description 30
- 239000012495 reaction gas Substances 0.000 abstract description 15
- 238000000151 deposition Methods 0.000 abstract description 8
- 230000008021 deposition Effects 0.000 abstract description 8
- 239000007795 chemical reaction product Substances 0.000 abstract description 7
- 230000007613 environmental effect Effects 0.000 abstract description 6
- 238000000746 purification Methods 0.000 abstract description 5
- 238000003756 stirring Methods 0.000 abstract description 5
- 230000004044 response Effects 0.000 abstract description 4
- 238000007740 vapor deposition Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003889 chemical engineering Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
The present invention relates to vapor deposition field, specifically a kind of chemical vapor deposition unit, the present invention utilizes the gas distribution pipe and substrate holder added, make reaction gas and enters in the form dispersed, and the form that gas falls is coincide with substrate holder, is kept contact of the gas with matrix more abundant, is improved reaction efficiency；Rotate substrate holder by rotating mechanism when being reacted, the substrate holder of rotation can not only stir reaction chamber internal gas, promote reaction, while can increase the response area of gas and matrix；The pick-and-place of matrix and reaction product can not only be facilitated, while sealing performance is good, flexible operation, convenience by the mobile completion of sealing mechanism when carrying out the pick-and-place of matrix；The reaction gas of generation is handled by tail gas processing mechanism, preliminary purification is carried out to the tail gas of generation, reduces the harm to environment, operation human body, improves the security performance and the feature of environmental protection of deposition.
Description
Technical field
The present invention relates to vapor deposition field, specifically a kind of chemical vapor deposition units.
Background technique
Chemical vapor deposition is a kind of Chemical Engineering Technology, which mainly utilizes one or more of gas containing film element
Phase compound or simple substance carry out the method that chemical reaction generates film on the surface of a substrate；Chemical vapor deposition is recent decades
The new technology of the preparation inorganic material to grow up；CVD method be widely used for purifying substances, develop new crystal,
Deposit various monocrystalline, polycrystalline or glassy state inorganic thin film material.
Existing chemical vapor deposition is carried out using precipitation equipment, and when being deposited, the contact area of gas and matrix has
Limit, therefore deposition efficiency is low, while not easy-offtaking matrix and reaction product.In consideration of it, the present invention provides a kind of chemical gaseous phases
Precipitation equipment has the characteristics that：
(1) a kind of chemical vapor deposition unit of the present invention makes reaction gas using the gas distribution pipe and substrate holder added
Entered in the form of dispersion, and the form that gas falls is coincide with substrate holder, is kept contact of the gas with matrix more abundant, is improved
Reaction efficiency.
(2) a kind of chemical vapor deposition unit of the present invention, makes substrate holder by rotating mechanism when being reacted
Rotation, the substrate holder of rotation can not only stir reaction chamber internal gas, promote reaction, while can increase reacting for gas and matrix
Area.
(3) a kind of chemical vapor deposition unit of the present invention can pass through sealing mechanism when carrying out the pick-and-place of matrix
Mobile completion, not only facilitate the pick-and-place of matrix and reaction product, while sealing performance is good, flexible operation, convenience.
(4) reaction gas of generation is passed through tail gas processing mechanism by a kind of chemical vapor deposition unit of the present invention
It is handled, preliminary purification is carried out to the tail gas of generation, reduces the harm to environment, operation human body, improves the safety of deposition
Energy and the feature of environmental protection.
Summary of the invention
For the problems of the prior art, the present invention provides a kind of chemical vapor deposition units, utilize the gas distribution added
Pipe and substrate holder make reaction gas and enter in the form dispersed, and the form that gas falls is coincide with substrate holder, makes gas and matrix
Contact it is more abundant, improve reaction efficiency；Rotate substrate holder by rotating mechanism when being reacted, the substrate holder of rotation
Reaction chamber internal gas can be not only stirred, promotes reaction, while the response area of gas and matrix can be increased；Carrying out matrix
The pick-and-place of matrix and reaction product can not only be facilitated, while sealing performance is good by the mobile completion of sealing mechanism when pick-and-place, grasped
It is flexible, convenient to make；The reaction gas of generation is handled by tail gas processing mechanism, the tail gas of generation is carried out preliminary net
Change, reduces the harm to environment, operation human body, improve the security performance and the feature of environmental protection of deposition.
The technical solution adopted by the present invention to solve the technical problems is：A kind of chemical vapor deposition unit, including air inlet
Pipe, gas distribution pipe, reaction chamber, substrate holder, retaining mechanism, sealing mechanism, rotating mechanism, heater and tail gas processing mechanism, it is described
The top of reaction chamber is equipped with air inlet pipe, and the air inlet pipe is connected to the reaction chamber by the gas distribution pipe；The reaction chamber
Inside is equipped with substrate holder, and the bottom connection of the substrate holder is for driving the rotating mechanism of the substrate holder rotation；Institute
The side fixing seal mechanism of rotating mechanism is stated, and sealing mechanism folding connects the reaction chamber；The sealing mechanism is used
In the taking-up substrate holder, and it is locked between the sealing mechanism and the reaction chamber by the retaining mechanism；
The bottom fixed heater of the reaction chamber, and the bottom of the reaction chamber is connected to the tail gas processing mechanism.
Specifically, the gas distribution pipe, using horn-like, the bottom of the gas distribution pipe equidistantly opens up several qi-emitting holes.
Specifically, the substrate holder includes deflector, the first liner plate, lamp bar and the second liner plate, the deflector is set to
The inside of the reaction chamber, second liner plate is fixed in the bottom of the deflector, at the center of the deflector described in fixation
The inside of first liner plate, the deflector is embedded in the lamp bar.
Specifically, the section of the deflector uses trapezium structure, the two sides of the deflector invaginate to form arcuate structure.
Specifically, the sealing mechanism includes cover board, rubber gasket sheet and handle, the rubber gasket sheet is embedded in institute
State the outer wall of reaction chamber, handle described in the back fixation of the cover board, the fixed rubber gasket sheet in the side of the cover board；Institute
The section of the edge of rubber gasket sheet is stated using ladder-like.
Specifically, the retaining mechanism includes locking cramp and locking discount, the locking cramp rotation connection is described anti-
Case is answered, and the locking cramp is fastened on the inside of the locking discount.
Specifically, the rotating mechanism includes motor, movable pulley, sliding rail, support rod, gear and turbine rod, the whirlpool
Wheel bar, which runs through, is fixed on the inside of the cover board, and the motor is installed in the end of the turbine rod, described in the turbine rod engagement
Gear, the fixed support rod in the top of the gear, fixed second liner plate in the top of the support rod；The bottom of the motor
Movable pulley is installed, the movable pulley is slidably connected the sliding rail, and the sliding rail is fixed on the side of the reaction chamber.
Specifically, the tail gas processing mechanism includes water tank, exhaust pipe, gas outlet and alcolhol burner, the exhaust pipe connects
Lead to the reaction chamber, the exhaust pipe is inserted into the inside of the water tank, and the side of the water tank opens up the gas outlet, described
The fixed alcolhol burner in the side of water tank.
Specifically, the side of the reaction chamber is openning shape, and described in the opening mating connection of the reaction chamber side
Cover board；The height of the cover board is identical as the sum of the height of the substrate holder, the support rod.
Beneficial effects of the present invention：
(1) a kind of chemical vapor deposition unit of the present invention makes reaction gas using the gas distribution pipe and substrate holder added
Entered in the form of dispersion, and the form that gas falls is coincide with substrate holder, is kept contact of the gas with matrix more abundant, is improved
Reaction efficiency.
(2) a kind of chemical vapor deposition unit of the present invention, makes substrate holder by rotating mechanism when being reacted
Rotation, the substrate holder of rotation can not only stir reaction chamber internal gas, promote reaction, while can increase reacting for gas and matrix
Area.
(3) a kind of chemical vapor deposition unit of the present invention can pass through sealing mechanism when carrying out the pick-and-place of matrix
Mobile completion, not only facilitate the pick-and-place of matrix and reaction product, while sealing performance is good, flexible operation, convenience.
(4) reaction gas of generation is passed through tail gas processing mechanism by a kind of chemical vapor deposition unit of the present invention
It is handled, preliminary purification is carried out to the tail gas of generation, reduces the harm to environment, operation human body, improves the safety of deposition
Energy and the feature of environmental protection.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 is a kind of structural schematic diagram of preferred embodiment of chemical vapor deposition unit provided by the invention；
Fig. 2 is the schematic perspective view of substrate holder shown in FIG. 1；
Fig. 3 is the bottom substance schematic diagram of gas distribution pipe shown in FIG. 1；
Fig. 4 is the attachment structure schematic diagram of sealing mechanism shown in FIG. 1 and rotation processing；
Fig. 5 is locking mechanism structure schematic diagram shown in Fig. 4.
In figure：1, air inlet pipe, 2, gas distribution pipe, 21, qi-emitting hole, 3, reaction chamber, 4, substrate holder, 41, deflector, 42, first
Liner plate, 43, lamp bar, the 44, second liner plate, 5, retaining mechanism, 51, locking cramp, 52, locking discount, 6, sealing mechanism, 61, lid
Plate, 62, rubber gasket sheet, 63, handle, 7, rotating mechanism, 71, motor, 72, movable pulley, 73, sliding rail, 74, support rod, 75, tooth
Wheel, 76, turbine rod, 8, heater, 9, tail gas processing mechanism, 91, water tank, 92, exhaust pipe, 93, gas outlet, 94, alcolhol burner.
Specific embodiment
In order to be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention, tie below
Specific embodiment is closed, the present invention is further explained.
As Figure 1-Figure 5, a kind of chemical vapor deposition unit of the present invention, including it is air inlet pipe 1, gas distribution pipe 2, anti-
Answer case 3, substrate holder 4, retaining mechanism 5, sealing mechanism 6, rotating mechanism 7, heater 8 and tail gas processing mechanism 9, the reaction chamber
3 top is equipped with air inlet pipe 1, and the air inlet pipe 1 is connected to the reaction chamber 3 by the gas distribution pipe 2；The reaction chamber 3
Inside is equipped with substrate holder 4, and the rotating mechanism of the bottom connection of the substrate holder 4 for driving the substrate holder 4 to rotate
7；The side fixing seal mechanism 6 of the rotating mechanism 7, and the folding of the sealing mechanism 6 connects the reaction chamber 3；It is described close
Sealing mechanism 7 passes through the retaining mechanism 5 for taking out the substrate holder 4 between the sealing mechanism 6 and the reaction chamber 3
It is locked；The bottom fixed heater 8 of the reaction chamber 3, and the bottom of the reaction chamber 3 is connected to the vent gas treatment
Mechanism 9.
Specifically, as shown in figures 1 and 3, the use of gas distribution pipe 2 is horn-like, and the bottom of the gas distribution pipe 2 equidistantly opens up
Several qi-emitting holes 21；When being passed through of reaction gas is being carried out, the gas inside the gas distribution pipe 2 is by qi-emitting hole 21 with dispersion
Form discharge realizes that gas is uniformly dispersed.
Specifically, as depicted in figs. 1 and 2, the substrate holder 4 includes deflector 41, the first liner plate 42, lamp bar 43 and the
Two liner plates 44, the deflector 41 are set to the inside of the reaction chamber 3, fixed second liner plate in the bottom of the deflector 41
44, fixed first liner plate 42 at the center of the deflector 41, the inside of the deflector 41 is embedded in the lamp bar 43；It will
Matrix is placed in the top of the deflector 41, first liner plate 42 and second liner plate 44, can make when gas is passed through
Matrix comes into full contact with gas, reaction, and lamp bar 43 can realize acceleration reaction.
Specifically, as depicted in figs. 1 and 2, the section of the deflector 41 uses trapezium structure, the two of the deflector 41
It invaginates to form arcuate structure in side；Improve contact area when reaction.
Specifically, as shown in Figure 1 and Figure 4, the sealing mechanism 6 includes cover board 61, rubber gasket sheet 62 and handle 63,
The rubber gasket sheet 62 is embedded in the outer wall of the reaction chamber 3, handle 63 described in the back fixation of the cover board 61, the lid
The fixed rubber gasket sheet 62 in the side of plate 61；The section of the edge of the rubber gasket sheet 62 is using ladder-like；Pass through
Cover board 61 is placed and taken out convenient for the substrate holder 4, and the rubber gasket sheet 62 can be improved whole sealing performance, and described
Hand 63 carries out opening and closing operation convenient for holding with a firm grip manually.
Specifically, as shown in Figure 1 and Figure 5, the retaining mechanism 5 includes locking cramp 51 and locking discount 52, the lock
The piece 51 that links closely is rotatablely connected the reaction chamber 3, and the locking cramp 51 is fastened on the inside of the locking discount 52；Make to lock
Discount 52 enters the inside of locking cramp 51, and cover board 61 is fixed in realization.
Specifically, as shown in Figure 1 and Figure 4, the rotating mechanism 7 includes motor 71, movable pulley 72, sliding rail 73, support rod
74, gear 75 and turbine rod 76, the turbine rod 76 run through the inside for being fixed on the cover board 61, the end of the turbine rod 76
The motor 71 is installed in portion, and the turbine rod 76 engages the gear 75, and the fixed support rod 74 in the top of the gear 75 is described
Fixed second liner plate 44 in the top of support rod 74；Movable pulley 72 is installed in the bottom of the motor 71, and the movable pulley 72 is sliding
The dynamic connection sliding rail 73, the sliding rail 73 are fixed on the side of the reaction chamber 3；Motor 71 is opened, motor 71 is made to drive whirlpool
It takes turns bar 76 to rotate, to realize that driving gear 75 rotates, can be realized and substrate holder 4 is driven to be rotated, improve the area of reaction.
Specifically, as shown in Figure 1, the tail gas processing mechanism 9 includes water tank 91, exhaust pipe 92, gas outlet 93 and wine
Smart lamp 94, the exhaust pipe 92 are connected to the reaction chamber 3, and the exhaust pipe 92 is inserted into the inside of the water tank 91, the water
The side of case 91 opens up the gas outlet 93, the fixed alcolhol burner 94 in the side of the water tank 91；Make after reaction a period of time
The gas that reaction generates is passed into the inside of water tank 91, determines whether a little upper alcolhol burner 94 according to demand, then reacts the tail of generation
Gas is passed into water tank 91 and is carried out precipitating gas therein (such as sulfurous gas) by water, and the gas after making cleaning passes through alcolhol burner 94
It burns, removes removing and harmful gas (such as carbon monoxide)；Realize the abundant processing of tail gas.The side of the reaction chamber 3 is to open
Mouth shape, and the opening mating connection cover board 61 of 3 side of the reaction chamber；The height of the cover board 61 and the substrate holder
4, the sum of height of the support rod 74 is identical.
Specifically, as shown in Figure 1 and Figure 4, the side of the reaction chamber 3 is openning shape, and 3 side of the reaction chamber is opened
Be cooperatively connected the cover board 61 at mouthful；The sum of the height of the cover board 61 and the height of the substrate holder 4, the support rod 74 phase
Together, in order to reinforce whole sealing performance.
Using the gas distribution pipe 2 and substrate holder 4 added, makes reaction gas and enter in the form dispersed, and the form that gas falls
It coincide with substrate holder 4, keeps contact of the gas with matrix more abundant, improve reaction efficiency；Pass through rotating machine when being reacted
Structure 7 rotates substrate holder 4, and the substrate holder 4 of rotation can not only stir 3 internal gas of reaction chamber, promotes reaction, while can increase gas
The response area of body and matrix；Carry out matrix pick-and-place when can by the mobile completion of sealing mechanism 6, not only facilitate matrix with
The pick-and-place of reaction product, while sealing performance is good, flexible operation, convenience；The reaction gas of generation is passed through into tail gas processing mechanism 9
It is handled, preliminary purification is carried out to the tail gas of generation, reduces the harm to environment, operation human body, improves the safety of deposition
Energy and the feature of environmental protection.Specifically have：
(1) when carrying out deposition operation, it is first turned on retaining mechanism 5, tight locking button piece is rotated when opening retaining mechanism 5
51, it takes out locking cramp 51 inside locking discount 52, then holds handle 63, outside pull cover board 61 makes sealing mechanism 5
It is separated with reaction chamber 3, cover board 61 can drive rotating mechanism 7 integrally to move to the right when separation, make movable pulley 72 on sliding rail 73
It is mobile, extraction substrate holder 4 can be realized, matrix is placed in the top surface of deflector 41, the first liner plate 42 and the second liner plate 44,
Then handle 63 is pushed to close cover board 61, makes to lock the inside that discount 52 enters locking cramp 51, realize and cover board 61 is carried out
It is fixed, reaction gas is then passed through by air inlet pipe 1, and open heater 8, lamp bar 43 and motor 71, drives motor 71
Turbine rod 76 rotates, to realize that driving gear 75 rotates, can be realized and substrate holder 4 is driven to be rotated, at this time reaction gas
It is reacted at high temperature with matrix.
(2) gas that reacting generates reaction after a period of time is passed into the inside of water tank 91, determines whether according to demand
Alcolhol burner 94 on point, the then tail gas for reacting generation are passed into water tank 91 and precipitate gas therein (such as sour gas by water
Body), the gas after making cleaning is burnt by alcolhol burner 94, removes removing and harmful gas (such as carbon monoxide)；Realize tail gas
Sufficiently processing.
(3) after the completion of vent gas treatment, cooling a period of time, tight locking button piece 5 is then rotated, makes to rotate cramp 5 from tight locking button
First 52 inside is taken out, and at this time by pull handle 63, separates cover board 61 with reaction chamber 3, be can be realized and is taken out substrate holder 4, right
The product of reaction is taken out.
The present invention makes reaction gas and enters in the form dispersed using the gas distribution pipe 2 and substrate holder 4 added, and gas falls
Form and substrate holder 4 coincide, keep contact of the gas with matrix more abundant, improve reaction efficiency；Pass through when being reacted
Rotating mechanism 7 rotates substrate holder 4, and the substrate holder 4 of rotation can not only stir 3 internal gas of reaction chamber, promotes reaction, while can
Increase the response area of gas and matrix；Can not only it be facilitated by the mobile completion of sealing mechanism 6 when carrying out the pick-and-place of matrix
The pick-and-place of matrix and reaction product, while sealing performance is good, flexible operation, convenience；The reaction gas of generation is passed through at tail gas
Reason mechanism 9 is handled, and is carried out preliminary purification to the tail gas of generation, is reduced the harm to environment, operation human body, improve deposition
Security performance and the feature of environmental protection.
The basic principles, main features and advantages of the invention have been shown and described above.The technical staff of the industry should
Understand, the present invention is not limited to the above embodiments, and the description in above embodiment and specification only illustrates the present invention
Principle, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these variation and
Improvement is both fallen in the scope of protection of present invention.The claimed scope of the invention is by appended claims and its equivalent
Object defines.
Claims (9)
1. a kind of chemical vapor deposition unit, it is characterised in that：Including air inlet pipe (1), gas distribution pipe (2), reaction chamber (3), substrate
Frame (4), retaining mechanism (5), sealing mechanism (6), rotating mechanism (7), heater (8) and tail gas processing mechanism (9), the reaction
The top of case (3) is equipped with air inlet pipe (1), and the air inlet pipe (1) is connected to the reaction chamber (3) by the gas distribution pipe (2)；Institute
The inside for stating reaction chamber (3) is equipped with substrate holder (4), and the bottom of the substrate holder (4) is connected for driving the substrate holder (4)
The rotating mechanism (7) of rotation；The side fixing seal mechanism (6) of the rotating mechanism (7), and the sealing mechanism (6)
Folding connects the reaction chamber (3)；The sealing mechanism (7) is for taking out the substrate holder (4), and the sealing mechanism (6)
It is locked between the reaction chamber (3) by the retaining mechanism (5)；The bottom of the reaction chamber (3) is fixed to be added
Hot device (8), and the bottom of the reaction chamber (3) is connected to the tail gas processing mechanism (9).
2. a kind of chemical vapor deposition unit according to claim 1, it is characterised in that：The gas distribution pipe (2) uses loudspeaker
Shape, the bottom of the gas distribution pipe (2) equidistantly open up several qi-emitting holes (21).
3. a kind of chemical vapor deposition unit according to claim 1, it is characterised in that：The substrate holder (4) includes leading
Flowing plate (41), the first liner plate (42), lamp bar (43) and the second liner plate (44), the deflector (41) are set to the reaction chamber
(3) inside, the bottom of the deflector (41) are fixed second liner plate (44), are fixed at the center of the deflector (41)
The inside of first liner plate (42), the deflector (41) is embedded in the lamp bar (43).
4. a kind of chemical vapor deposition unit according to claim 3, it is characterised in that：The section of the deflector (41)
Using trapezium structure, the two sides of the deflector (41) invaginate to form arcuate structure.
5. a kind of chemical vapor deposition unit according to claim 4, it is characterised in that：The sealing mechanism (6) includes
Cover board (61), rubber gasket sheet (62) and handle (63), the rubber gasket sheet (62) are embedded in the outer of the reaction chamber (3)
Wall, handle (63) described in the back fixation of the cover board (61), the fixed rubber gasket sheet in the side of the cover board (61)
(62)；The section of the edge of the rubber gasket sheet (62) is using ladder-like.
6. a kind of chemical vapor deposition unit according to claim 1, it is characterised in that：The retaining mechanism (5) includes
Cramp (51) and locking discount (52) are locked, the locking cramp (51) is rotatablely connected the reaction chamber (3), and the tight locking button
Piece (51) is fastened on the inside of locking discount (52).
7. a kind of chemical vapor deposition unit according to claim 5, it is characterised in that：The rotating mechanism (7) includes
Motor (71), movable pulley (72), sliding rail (73), support rod (74), gear (75) and turbine rod (76), the turbine rod (76)
Through the inside for being fixed on the cover board (61), the motor (71), the turbine rod are installed in the end of the turbine rod (76)
(76) gear (75) is engaged, the top of the gear (75) is fixed support rod (74), and the top of the support rod (74) is solid
Fixed second liner plate (44)；Movable pulley (72) are installed in the bottom of the motor (71), and the movable pulley (72) is slidably connected institute
It states sliding rail (73), the sliding rail (73) is fixed on the side of the reaction chamber (3).
8. a kind of chemical vapor deposition unit according to claim 1, it is characterised in that：The tail gas processing mechanism (9)
Including water tank (91), exhaust pipe (92), gas outlet (93) and alcolhol burner (94), the exhaust pipe (92) is connected to the reaction chamber
(3), the exhaust pipe (92) is inserted into the inside of the water tank (91), and the side of the water tank (91) opens up the gas outlet
(93), the fixed alcolhol burner (94) in the side of the water tank (91).
9. a kind of chemical vapor deposition unit according to claim 7, it is characterised in that：The side of the reaction chamber (3)
For openning shape, and the opening of the reaction chamber (3) side is cooperatively connected the cover board (61)；The height of the cover board (61) with
The substrate holder (4), the sum of the height of the support rod (74) are identical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811027284.8A CN108866511B (en) | 2018-09-04 | 2018-09-04 | Chemical vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811027284.8A CN108866511B (en) | 2018-09-04 | 2018-09-04 | Chemical vapor deposition device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108866511A true CN108866511A (en) | 2018-11-23 |
| CN108866511B CN108866511B (en) | 2020-08-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811027284.8A Expired - Fee Related CN108866511B (en) | 2018-09-04 | 2018-09-04 | Chemical vapor deposition device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109355639A (en) * | 2018-11-16 | 2019-02-19 | 四川大学 | Solid lubricant coating coater for gear teeth face |
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| CN1540033A (en) * | 2003-04-14 | 2004-10-27 | 三星电子株式会社 | Chemical vapor deposition installation with integrated diffuser frame |
| US20110200749A1 (en) * | 2010-02-17 | 2011-08-18 | Kunihiko Suzuki | Film deposition apparatus and method |
| CN201942748U (en) * | 2010-12-29 | 2011-08-24 | 戴煜 | Gas inlet pipe system suitable for large-size chemical vapor deposition furnace |
| CN203373421U (en) * | 2013-07-02 | 2014-01-01 | 深圳市捷佳伟创新能源装备股份有限公司 | MOCVD (Metal Oxide Chemical Vapor Deposition) reaction equipment |
| CN205313663U (en) * | 2016-01-14 | 2016-06-15 | 新乡职业技术学院 | Metal organic chemical vapor deposition equipment |
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- 2018-09-04 CN CN201811027284.8A patent/CN108866511B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1540033A (en) * | 2003-04-14 | 2004-10-27 | 三星电子株式会社 | Chemical vapor deposition installation with integrated diffuser frame |
| US20110200749A1 (en) * | 2010-02-17 | 2011-08-18 | Kunihiko Suzuki | Film deposition apparatus and method |
| CN201942748U (en) * | 2010-12-29 | 2011-08-24 | 戴煜 | Gas inlet pipe system suitable for large-size chemical vapor deposition furnace |
| CN203373421U (en) * | 2013-07-02 | 2014-01-01 | 深圳市捷佳伟创新能源装备股份有限公司 | MOCVD (Metal Oxide Chemical Vapor Deposition) reaction equipment |
| CN205313663U (en) * | 2016-01-14 | 2016-06-15 | 新乡职业技术学院 | Metal organic chemical vapor deposition equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109355639A (en) * | 2018-11-16 | 2019-02-19 | 四川大学 | Solid lubricant coating coater for gear teeth face |
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| CN108866511B (en) | 2020-08-28 |
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