CN108866511B - Chemical vapor deposition device - Google Patents
Chemical vapor deposition device Download PDFInfo
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- CN108866511B CN108866511B CN201811027284.8A CN201811027284A CN108866511B CN 108866511 B CN108866511 B CN 108866511B CN 201811027284 A CN201811027284 A CN 201811027284A CN 108866511 B CN108866511 B CN 108866511B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to the field of vapor deposition, in particular to a chemical vapor deposition device, which utilizes an additionally arranged gas distribution pipe and a substrate frame to ensure that reaction gas enters in a dispersed mode, and the falling form of the gas is matched with the substrate frame, so that the gas is more fully contacted with a matrix, and the reaction efficiency is improved; the rotating substrate holder can stir the gas in the reaction box to promote the reaction and increase the reaction area between the gas and the matrix; the taking and placing of the matrix can be completed by moving the sealing mechanism, so that the taking and placing of the matrix and a reaction product are facilitated, and meanwhile, the sealing performance is good, and the operation is flexible and convenient; the generated reaction gas is treated by the tail gas treatment mechanism, the generated tail gas is preliminarily purified, the harm to the environment and the operation human body is reduced, and the safety performance and the environmental protection performance of deposition are improved.
Description
Technical Field
The invention relates to the field of vapor deposition, in particular to a chemical vapor deposition device.
Background
Chemical vapor deposition is a chemical technology, which is a method for generating a film by performing chemical reaction on the surface of a substrate by mainly utilizing one or more gas-phase compounds or simple substances containing film elements; chemical vapor deposition is a new technology for preparing inorganic materials that has been developed in recent decades; chemical vapor deposition has been widely used to purify substances, develop new crystals, and deposit various single-crystal, polycrystalline, or glassy inorganic thin film materials.
The existing chemical vapor deposition is carried out by using a deposition device, and the contact area of gas and a substrate is limited during deposition, so that the deposition efficiency is low, and the substrate and reaction products are not easy to take and place. In view of the above, the present invention provides a chemical vapor deposition apparatus, which has the following features:
(1) according to the chemical vapor deposition device, the reaction gas enters in a dispersed mode by utilizing the additionally arranged gas distribution pipe and the substrate holder, and the falling form of the gas is matched with the substrate holder, so that the gas is more fully contacted with the matrix, and the reaction efficiency is improved.
(2) According to the chemical vapor deposition device, the substrate holder is rotated through the rotating mechanism during reaction, the rotating substrate holder can stir gas in the reaction box to promote reaction, and meanwhile, the reaction area of the gas and a matrix can be enlarged.
(3) The chemical vapor deposition device can be used for taking and placing the matrix through the movement of the sealing mechanism, so that the taking and placing of the matrix and a reaction product are facilitated, and meanwhile, the chemical vapor deposition device is good in sealing performance and flexible and convenient to operate.
(4) According to the chemical vapor deposition device, the generated reaction gas is treated by the tail gas treatment mechanism, the generated tail gas is preliminarily purified, the harm to the environment and the operation human body is reduced, and the safety performance and the environmental protection performance of deposition are improved.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a chemical vapor deposition device, which utilizes the additionally arranged gas distribution pipe and a substrate frame to ensure that reaction gas enters in a dispersed mode, and the falling form of the gas is matched with the substrate frame, so that the gas is more fully contacted with a matrix, and the reaction efficiency is improved; the rotating substrate holder can stir the gas in the reaction box to promote the reaction and increase the reaction area between the gas and the matrix; the taking and placing of the matrix can be completed by moving the sealing mechanism, so that the taking and placing of the matrix and a reaction product are facilitated, and meanwhile, the sealing performance is good, and the operation is flexible and convenient; the generated reaction gas is treated by the tail gas treatment mechanism, the generated tail gas is preliminarily purified, the harm to the environment and the operation human body is reduced, and the safety performance and the environmental protection performance of deposition are improved.
The technical scheme adopted by the invention for solving the technical problems is as follows: a chemical vapor deposition device comprises an air inlet pipe, an air distribution pipe, a reaction box, a substrate holder, a locking mechanism, a sealing mechanism, a rotating mechanism, a heater and a tail gas treatment mechanism, wherein the air inlet pipe is arranged at the top of the reaction box and is communicated with the reaction box through the air distribution pipe; a substrate holder is arranged in the reaction box, and the bottom of the substrate holder is connected with the rotating mechanism for driving the substrate holder to rotate; a sealing mechanism is fixed on the side part of the rotating mechanism and is connected with the reaction box in an opening and closing manner; the sealing mechanism is used for taking out the substrate frame, and the sealing mechanism and the reaction box are locked and fixed through the locking mechanism; the bottom of the reaction box is fixedly provided with a heater, and the bottom of the reaction box is communicated with the tail gas treatment mechanism.
Specifically, the air distribution pipe is in a horn shape, and a plurality of air distribution holes are formed in the bottom of the air distribution pipe at equal intervals.
Specifically, the substrate holder includes guide plate, first welt, lamp strip and second welt, the guide plate is located the inside of reaction box, the bottom of guide plate is fixed the second welt, the center department of guide plate is fixed first welt, the inboard embedding of guide plate the lamp strip.
Specifically, the cross section of the guide plate adopts a trapezoidal structure, and two sides of the guide plate are sunken inwards to form an arc-shaped structure.
Specifically, the sealing mechanism comprises a cover plate, a rubber sealing plate and a handle, the rubber sealing plate is embedded in the outer wall of the reaction box, the handle is fixed to the back of the cover plate, and the rubber sealing plate is fixed to the side of the cover plate; the cross section of the edge of the rubber sealing plate is in a step shape.
Specifically, the locking mechanism comprises a locking buckle piece and a locking buckle head, the locking buckle piece is rotatably connected with the reaction box, and the locking buckle piece is buckled on the inner side of the locking buckle head.
Specifically, the rotating mechanism comprises a motor, a moving wheel, a sliding rail, a supporting rod, a gear and a turbine rod, the turbine rod penetrates through and is fixed inside the cover plate, the motor is installed at the end of the turbine rod, the turbine rod is meshed with the gear, the supporting rod is fixed at the top of the gear, and the second lining plate is fixed at the top of the supporting rod; the bottom of the motor is provided with a moving wheel which is connected with the slide rail in a sliding way, and the slide rail is fixed on the side part of the reaction box.
Specifically, tail gas treatment mechanism includes water tank, blast pipe, gas outlet and alcohol burner, the blast pipe intercommunication the reaction box, the blast pipe inserts the inside of water tank, the lateral part of water tank is seted up the gas outlet, the lateral part of water tank is fixed the alcohol burner.
Specifically, the side part of the reaction box is in an opening shape, and the opening part of the side part of the reaction box is connected with the cover plate in a matching way; the height of the cover plate is the same as the sum of the heights of the substrate frame and the supporting rod.
The invention has the beneficial effects that:
(1) according to the chemical vapor deposition device, the reaction gas enters in a dispersed mode by utilizing the additionally arranged gas distribution pipe and the substrate holder, and the falling form of the gas is matched with the substrate holder, so that the gas is more fully contacted with the matrix, and the reaction efficiency is improved.
(2) According to the chemical vapor deposition device, the substrate holder is rotated through the rotating mechanism during reaction, the rotating substrate holder can stir gas in the reaction box to promote reaction, and meanwhile, the reaction area of the gas and a matrix can be enlarged.
(3) The chemical vapor deposition device can be used for taking and placing the matrix through the movement of the sealing mechanism, so that the taking and placing of the matrix and a reaction product are facilitated, and meanwhile, the chemical vapor deposition device is good in sealing performance and flexible and convenient to operate.
(4) According to the chemical vapor deposition device, the generated reaction gas is treated by the tail gas treatment mechanism, the generated tail gas is preliminarily purified, the harm to the environment and the operation human body is reduced, and the safety performance and the environmental protection performance of deposition are improved.
Drawings
The invention is further illustrated with reference to the following figures and examples.
FIG. 1 is a schematic structural diagram of a chemical vapor deposition apparatus according to a preferred embodiment of the present invention;
FIG. 2 is a schematic perspective view of the substrate holder shown in FIG. 1;
FIG. 3 is a schematic bottom view of the gas distribution tube shown in FIG. 1;
FIG. 4 is a schematic view of the sealing mechanism of FIG. 1 coupled to a rotary tool;
fig. 5 is a schematic structural view of the locking mechanism shown in fig. 4.
In the figure: 1. the gas inlet pipe, 2, the gas distribution pipe, 21, the gas distribution hole, 3, the reaction box, 4, the substrate holder, 41, the guide plate, 42, first welt, 43, lamp strip, 44, the second welt, 5, locking mechanism, 51, locking cramp, 52, locking discount, 6, sealing mechanism, 61, apron, 62, rubber seal board, 63, handle, 7, slewing mechanism, 71, motor, 72, removal wheel, 73, slide rail, 74, bracing piece, 75, gear, 76, turbine pole, 8, heater, 9, tail gas treatment mechanism, 91, water tank, 92, blast pipe, 93, gas outlet, 94, alcohol burner.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
As shown in fig. 1-5, the chemical vapor deposition apparatus of the present invention comprises an air inlet pipe 1, an air distribution pipe 2, a reaction chamber 3, a substrate holder 4, a locking mechanism 5, a sealing mechanism 6, a rotating mechanism 7, a heater 8 and a tail gas treatment mechanism 9, wherein the top of the reaction chamber 3 is provided with the air inlet pipe 1, and the air inlet pipe 1 is communicated with the reaction chamber 3 through the air distribution pipe 2; a substrate holder 4 is arranged in the reaction box 3, and the bottom of the substrate holder 4 is connected with the rotating mechanism 7 for driving the substrate holder 4 to rotate; a sealing mechanism 6 is fixed on the side part of the rotating mechanism 7, and the sealing mechanism 6 is connected with the reaction box 3 in an opening and closing manner; the sealing mechanism 6 is used for taking out the substrate frame 4, and the sealing mechanism 6 and the reaction box 3 are locked and fixed through the locking mechanism 5; the bottom of the reaction box 3 is fixed with a heater 8, and the bottom of the reaction box 3 is communicated with the tail gas treatment mechanism 9.
Specifically, as shown in fig. 1 and 3, the air distribution pipe 2 is in a horn shape, and a plurality of air distribution holes 21 are formed in the bottom of the air distribution pipe 2 at equal intervals; when the reaction gas is introduced, the gas in the gas distribution pipe 2 is discharged in a dispersed form through the gas distribution holes 21, so that the gas is uniformly dispersed.
Specifically, as shown in fig. 1 and 2, the substrate holder 4 includes a flow guide plate 41, a first liner plate 42, a light bar 43, and a second liner plate 44, the flow guide plate 41 is disposed inside the reaction chamber 3, the second liner plate 44 is fixed to the bottom of the flow guide plate 41, the first liner plate 42 is fixed to the center of the flow guide plate 41, and the light bar 43 is embedded in the inner side of the flow guide plate 41; the base body is arranged on the tops of the guide plate 41, the first lining plate 42 and the second lining plate 44, so that the base body can be in full contact with gas when the gas is introduced, the reaction can be realized, and the light bar 43 can realize accelerated reaction.
Specifically, as shown in fig. 1 and fig. 2, the cross section of the baffle 41 adopts a trapezoidal structure, and two sides of the baffle 41 are recessed to form an arc structure; the contact area during the reaction is increased.
Specifically, as shown in fig. 1 and 4, the sealing mechanism 6 includes a cover plate 61, a rubber sealing plate 62, and a handle 63, the rubber sealing plate 62 is embedded in the outer wall of the reaction chamber 3, the handle 63 is fixed to the back of the cover plate 61, and the rubber sealing plate 62 is fixed to the side of the cover plate 61; the cross section of the edge of the rubber sealing plate 62 is in a step shape; the cover plate 61 is convenient for putting in and taking out the substrate holder 4, the rubber sealing plate 62 can improve the whole sealing performance, and the handle 63 is convenient for being manually held for opening and closing.
Specifically, as shown in fig. 1 and 5, the locking mechanism 5 includes a locking buckle piece 51 and a locking buckle head 52, the locking buckle piece 51 is rotatably connected to the reaction box 3, and the locking buckle piece 51 is buckled on the inner side of the locking buckle head 52; the locking buckle head 52 enters the locking buckle piece 51 to fix the cover plate 61.
Specifically, as shown in fig. 1 and 4, the rotating mechanism 7 includes a motor 71, a moving wheel 72, a sliding rail 73, a supporting rod 74, a gear 75, and a turbine rod 76, the turbine rod 76 is fixed inside the cover plate 61 in a penetrating manner, the motor 71 is mounted at an end of the turbine rod 76, the turbine rod 76 engages with the gear 75, the supporting rod 74 is fixed at a top of the gear 75, and the second lining plate 44 is fixed at a top of the supporting rod 74; a moving wheel 72 is installed at the bottom of the motor 71, the moving wheel 72 is slidably connected with the slide rail 73, and the slide rail 73 is fixed at the side of the reaction box 3; the motor 71 is turned on, the motor 71 drives the turbine rod 76 to rotate, so that the driving gear 75 is driven to rotate, the substrate holder 4 can be driven to rotate, and the reaction area is increased.
Specifically, as shown in fig. 1, the exhaust gas treatment mechanism 9 includes a water tank 91, an exhaust pipe 92, an air outlet 93, and an alcohol burner 94, the exhaust pipe 92 is communicated with the reaction tank 3, the exhaust pipe 92 is inserted into the water tank 91, the air outlet 93 is provided at a side portion of the water tank 91, and the alcohol burner 94 is fixed to the side portion of the water tank 91; after a period of reaction, gas generated by the reaction is introduced into the water tank 91, whether the alcohol burner 94 is turned on or not is determined according to the requirement, tail gas generated by the reaction is introduced into the water tank 91, gas (such as sulfur-containing gas) in the water is precipitated by water, and the cleaned gas is combusted through the alcohol burner 94 to remove harmful gas (such as carbon monoxide); and the full treatment of tail gas is realized. The side part of the reaction box 3 is in an opening shape, and the opening part of the side part of the reaction box 3 is connected with the cover plate 61 in a matching way; the height of the cover plate 61 is the same as the sum of the heights of the substrate holder 4 and the support rods 74.
Specifically, as shown in fig. 1 and 4, the side of the reaction box 3 is open, and the opening at the side of the reaction box 3 is connected to the cover plate 61 in a matching manner; the height of the cover plate 61 is the same as the sum of the heights of the substrate holder 4 and the support rods 74, in order to enhance the overall sealing performance.
By utilizing the additionally arranged gas distribution pipe 2 and the substrate holder 4, the reaction gas enters in a dispersed form, and the falling form of the gas is matched with the substrate holder 4, so that the gas is more fully contacted with the matrix, and the reaction efficiency is improved; the substrate holder 4 is rotated by the rotating mechanism 7 during the reaction, the rotating substrate holder 4 not only can stir the gas in the reaction box 3 to promote the reaction, but also can enlarge the reaction area of the gas and the matrix; when taking and placing the matrix, the matrix can be taken and placed through the movement of the sealing mechanism 6, so that the matrix and the reaction product are convenient to take and place, and meanwhile, the sealing performance is good, and the operation is flexible and convenient; the generated reaction gas is treated by the tail gas treatment mechanism 9, the generated tail gas is preliminarily purified, the harm to the environment and the operation human body is reduced, and the safety performance and the environmental protection performance of deposition are improved. The method specifically comprises the following steps:
(1) when the deposition operation is performed, firstly, the locking mechanism 5 is opened, when the locking mechanism 5 is opened, the locking buckle piece 51 is rotated, the locking buckle piece 51 is taken out from the inside of the locking buckle head 52, then the handle 63 is held, the cover plate 61 is pulled outwards, the sealing mechanism 5 is separated from the reaction box 3, when the cover plate 61 is separated, the rotating mechanism 7 can be driven by the cover plate 61 to integrally move towards the right side, the moving wheel 72 moves on the sliding rail 73, the substrate frame 4 can be drawn out, the substrate is placed on the top surfaces of the guide plate 41, the first lining plate 42 and the second lining plate 44, then the cover plate 61 is pushed by the handle 63, the locking buckle head 52 enters the inside of the locking buckle piece 51, the fixing of the cover plate 61 is realized, then the reaction gas is introduced through the gas inlet pipe 1, the heater 8, the light bar 43 and the motor 71 are opened, the turbine rod 76 is driven by the, the substrate holder 4 can be driven to rotate, and the reaction gas and the matrix react at high temperature.
(2) After a period of reaction, gas generated by the reaction is introduced into the water tank 91, whether the alcohol burner 94 is turned on or not is determined according to the requirement, tail gas generated by the reaction is introduced into the water tank 91, gas (such as sulfur-containing gas) in the water is precipitated by water, and the cleaned gas is combusted through the alcohol burner 94 to remove harmful gas (such as carbon monoxide); and the full treatment of tail gas is realized.
(3) After the tail gas treatment is finished, the tail gas is cooled for a period of time, then the locking buckle piece 5 is rotated, the locking buckle piece 5 is taken out from the inside of the locking buckle head 52, at the moment, the cover plate 61 is separated from the reaction box 3 by pulling the handle 63, the substrate frame 4 can be taken out, and the reaction product is taken out.
The invention utilizes the additionally arranged gas distribution pipe 2 and the substrate holder 4 to ensure that the reaction gas enters in a dispersed form, and the falling form of the gas is matched with the substrate holder 4, so that the gas is more fully contacted with the matrix, and the reaction efficiency is improved; the substrate holder 4 is rotated by the rotating mechanism 7 during the reaction, the rotating substrate holder 4 not only can stir the gas in the reaction box 3 to promote the reaction, but also can enlarge the reaction area of the gas and the matrix; when taking and placing the matrix, the matrix can be taken and placed through the movement of the sealing mechanism 6, so that the matrix and the reaction product are convenient to take and place, and meanwhile, the sealing performance is good, and the operation is flexible and convenient; the generated reaction gas is treated by the tail gas treatment mechanism 9, the generated tail gas is preliminarily purified, the harm to the environment and the operation human body is reduced, and the safety performance and the environmental protection performance of deposition are improved.
The foregoing illustrates and describes the principles, general features, and advantages of the present invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and the embodiments and descriptions given above are only illustrative of the principles of the present invention, and various changes and modifications may be made without departing from the spirit and scope of the invention, which fall within the scope of the claims. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (9)
1. A chemical vapor deposition apparatus, characterized by: the device comprises an air inlet pipe (1), an air distribution pipe (2), a reaction box (3), a substrate holder (4), a locking mechanism (5), a sealing mechanism (6), a rotating mechanism (7), a heater (8) and a tail gas treatment mechanism (9), wherein the air inlet pipe (1) is arranged at the top of the reaction box (3), and the air inlet pipe (1) is communicated with the reaction box (3) through the air distribution pipe (2); a substrate holder (4) is arranged in the reaction box (3), and the bottom of the substrate holder (4) is connected with a rotating mechanism (7) for driving the substrate holder (4) to rotate; a sealing mechanism (6) is fixed on the side part of the rotating mechanism (7), and the sealing mechanism (6) is connected with the reaction box (3) in an opening and closing manner; the sealing mechanism (6) is used for taking out the substrate frame (4), and the sealing mechanism (6) and the reaction box (3) are locked and fixed through the locking mechanism (5); the heater (8) is fixed at the bottom of the reaction box (3), and the bottom of the reaction box (3) is communicated with the tail gas treatment mechanism (9).
2. A chemical vapor deposition apparatus as claimed in claim 1, wherein: the air distribution pipe (2) is in a horn shape, and a plurality of air distribution holes (21) are formed in the bottom of the air distribution pipe (2) at equal intervals.
3. A chemical vapor deposition apparatus as claimed in claim 1, wherein: substrate frame (4) include guide plate (41), first welt (42), lamp strip (43) and second welt (44), guide plate (41) are located the inside of reaction box (3), the bottom of guide plate (41) is fixed second welt (44), the center department of guide plate (41) is fixed first welt (42), the inboard embedding of guide plate (41) lamp strip (43).
4. A chemical vapor deposition apparatus as claimed in claim 3, wherein: the cross section of the guide plate (41) adopts a trapezoidal structure, and two sides of the guide plate (41) are sunken inwards to form an arc-shaped structure.
5. A chemical vapor deposition apparatus according to claim 4, wherein: the sealing mechanism (6) comprises a cover plate (61), a rubber sealing plate (62) and a handle (63), the rubber sealing plate (62) is embedded in the outer wall of the reaction box (3), the handle (63) is fixed to the back of the cover plate (61), and the rubber sealing plate (62) is fixed to the side of the cover plate (61); the cross section of the edge of the rubber sealing plate (62) is in a step shape.
6. A chemical vapor deposition apparatus as claimed in claim 1, wherein: the locking mechanism (5) comprises a locking buckle piece (51) and a locking buckle head (52), the locking buckle piece (51) is rotatably connected with the reaction box (3), and the locking buckle piece (51) is buckled on the inner side of the locking buckle head (52).
7. A chemical vapor deposition apparatus according to claim 5, wherein: the rotating mechanism (7) comprises a motor (71), a moving wheel (72), a sliding rail (73), a supporting rod (74), a gear (75) and a turbine rod (76), the turbine rod (76) penetrates through and is fixed inside the cover plate (61), the motor (71) is installed at the end part of the turbine rod (76), the turbine rod (76) is meshed with the gear (75), the supporting rod (74) is fixed at the top part of the gear (75), and the second lining plate (44) is fixed at the top part of the supporting rod (74); the bottom of the motor (71) is provided with a moving wheel (72), the moving wheel (72) is connected with the sliding rail (73) in a sliding manner, and the sliding rail (73) is fixed on the side part of the reaction box (3).
8. A chemical vapor deposition apparatus as claimed in claim 1, wherein: tail gas treatment mechanism (9) include water tank (91), blast pipe (92), gas outlet (93) and alcohol burner (94), blast pipe (92) intercommunication reaction box (3), blast pipe (92) insert the inside of water tank (91), the lateral part of water tank (91) is seted up gas outlet (93), the lateral part of water tank (91) is fixed alcohol burner (94).
9. A chemical vapor deposition apparatus as claimed in claim 7, wherein: the side part of the reaction box (3) is in an opening shape, and the opening part of the side part of the reaction box (3) is connected with the cover plate (61) in a matching way; the height of the cover plate (61) is the same as the sum of the heights of the substrate holder (4) and the support rod (74).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN1540033A (en) * | 2003-04-14 | 2004-10-27 | 三星电子株式会社 | Chemical vapor deposition installation with integrated diffuser frame |
| US20110200749A1 (en) * | 2010-02-17 | 2011-08-18 | Kunihiko Suzuki | Film deposition apparatus and method |
| CN201942748U (en) * | 2010-12-29 | 2011-08-24 | 戴煜 | Gas inlet pipe system suitable for large-size chemical vapor deposition furnace |
| CN203373421U (en) * | 2013-07-02 | 2014-01-01 | 深圳市捷佳伟创新能源装备股份有限公司 | MOCVD (Metal Oxide Chemical Vapor Deposition) reaction equipment |
| CN205313663U (en) * | 2016-01-14 | 2016-06-15 | 新乡职业技术学院 | Metal organic chemical vapor deposition equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1540033A (en) * | 2003-04-14 | 2004-10-27 | 三星电子株式会社 | Chemical vapor deposition installation with integrated diffuser frame |
| US20110200749A1 (en) * | 2010-02-17 | 2011-08-18 | Kunihiko Suzuki | Film deposition apparatus and method |
| CN201942748U (en) * | 2010-12-29 | 2011-08-24 | 戴煜 | Gas inlet pipe system suitable for large-size chemical vapor deposition furnace |
| CN203373421U (en) * | 2013-07-02 | 2014-01-01 | 深圳市捷佳伟创新能源装备股份有限公司 | MOCVD (Metal Oxide Chemical Vapor Deposition) reaction equipment |
| CN205313663U (en) * | 2016-01-14 | 2016-06-15 | 新乡职业技术学院 | Metal organic chemical vapor deposition equipment |
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