CN104979248B - The mechanism of supplying gas of sensor monocrystalline silicon etching device - Google Patents
The mechanism of supplying gas of sensor monocrystalline silicon etching device Download PDFInfo
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- CN104979248B CN104979248B CN201510399724.2A CN201510399724A CN104979248B CN 104979248 B CN104979248 B CN 104979248B CN 201510399724 A CN201510399724 A CN 201510399724A CN 104979248 B CN104979248 B CN 104979248B
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- pipe portion
- reative cell
- end cap
- monocrystalline silicon
- reaction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a kind of mechanism of supplying gas of sensor monocrystalline silicon etching device, and it includes reative cell, and the upper end of reative cell is provided with air duct, and it is connected to the source of the gas room being arranged on outside reative cell；The upper surface of the reative cell is provided with reaction end cap, and it uses hollow structure, and the air duct extends to reaction cover internal；Multiple guide pipelines are provided among the lower surface of the reaction end cap, each guide pipeline includes the first pipe portion, second pipe portion and the 3rd pipe portion, the diameter in the vertical direction of first pipe portion are gradually reduced, and the diameter in the vertical direction of the 3rd pipe portion gradually increases；Using the mechanism of supplying gas of the sensor monocrystalline silicon etching device of above-mentioned technical proposal, it can pass through the structure setting of guide pipeline, so that it forms pressure difference between the first pipe portion and the 3rd pipe portion, so that reacting gas can be passed through among reative cell rapidly, and by pressure difference avoid reacting gas return to reaction end cap among, to cause leaking for gas.
Description
Technical field
The present invention relates to sending for a kind of process equipment of sensor element, especially a kind of sensor monocrystalline silicon etching device
Mechanism of qi structure.
Background technology
Sensor in process, is both needed to perform etching it processing with monocrystalline silicon；During existing lithography,
It is overlayed on horse often through by multiple monocrystalline silicon, and by importing reacting gas to horse position, and cause
Reacting gas produces plasma under electric field environment, to be performed etching to monocrystalline silicon；However, in existing work flow, instead
Gas is answered often to be passed directly into reaction vessel, reaction vessel is only capable of carrying out closed processes by sealing ring with the external world, it is difficult to complete
The phenomenon of leakage of reaction gas is avoided to occur entirely.When leakage of reaction gas room, it can not only influence the monocrystalline of reaction vessel interior
The etching precision of silicon, and the external world can be polluted.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of mechanism of supplying gas of sensor monocrystalline silicon etching device, it can show
Writing improves in etching process, the efficiency that reacting gas imports, and lifts the sealing of reative cell.
In order to solve the above technical problems, the present invention relates to a kind of mechanism of supplying gas of sensor monocrystalline silicon etching device, it is wrapped
Reative cell is included, the upper end of reative cell is provided with air duct, and it is connected to the source of the gas room being arranged on outside reative cell, reaction
The bottom of room is provided with pump-line, and it is connected to the vavuum pump being arranged on outside reative cell；The axis position of the reative cell
Install and be equipped with horse, it is connected to the horse rotating mechanism being arranged on outside reative cell；Electromagnetism is provided with the outside of the reative cell
Coil；The upper surface of the reative cell is provided with reaction end cap, and it uses hollow structure, and the air duct extends to reactive end
Lid is internal；Multiple guide pipelines are provided among the lower surface of the reaction end cap, each guide pipeline includes first
Pipe portion, the second pipe portion and the 3rd pipe portion, wherein, the first pipe portion is connected to reaction cover internal, and the 3rd pipe portion is connected to reative cell
Inside, the second pipe portion are arranged between the first pipe portion and the 3rd pipe portion；The diameter in the vertical direction of first pipe portion is gradual
Reduce, the diameter in the vertical direction of the 3rd pipe portion gradually increases.
As a modification of the present invention, the lower surface of the reaction end cap is provided with least four guide pipeline, and it can be right
Each position provides uniform reacting gas inside reative cell.
As a modification of the present invention, the lower surface of the reaction end cap is provided with least 2 groups of guide pipelines, and every group is led
Feed channel is formed by least one axis on reacting end cap into the guide pipeline of rotational symmetry.
As a modification of the present invention, the lower surface of the reaction end cap is provided with 3 groups of guide pipelines, wherein, every group
Any guide pipeline and the distance between reaction end cap axis in guide pipeline is different.Using above-mentioned design, it can make
Distribution of the reacting gas inside reative cell is spent and further improved.
As a modification of the present invention, in the guide pipeline, the length of the first pipe portion is the 1/5 of the 3rd pipe portion length
To 1/4, it may be such that caused negative-pressure adsorption effect is improved between the first pipe portion and the 3rd pipe portion, so that gas is led
The efficiency entered is improved, and guide pipeline is also improved for the barriering effect of reative cell internal gas.
As a modification of the present invention, in the guide pipeline, the length of the second pipe portion is at most 1 centimetre.
As a modification of the present invention, the connection end of the reaction end cap and reative cell is provided with sealing ring.
As a modification of the present invention, the connection end of the air duct and reaction end cap is provided with sealing ring.Adopt
With above-mentioned design, it can pass through multi-sealed processing so that the sealing effectiveness of reative cell internal gas is improved.
Using the mechanism of supplying gas of the sensor monocrystalline silicon etching device of above-mentioned technical proposal, it can be by reacting in end cap
Hollow structure so that after reacting gas is by air duct, reative cell is passed through by multiple guide pipelines of reactive end base end face
It is internal；The structure setting of guide pipeline so that it forms pressure difference between the first pipe portion and the 3rd pipe portion so that reacting gas can
Be passed through among reative cell rapidly, and by pressure difference avoid reacting gas return to reaction end cap among, to cause leaking for gas, from
And cause the importing efficiency of gas, and the sealing of reative cell is improved.
Brief description of the drawings
Fig. 1 is schematic diagram of the present invention；
Fig. 2 is reaction end cap top view in the present invention；
Reference numerals list：
1-reative cell, 2-air duct, 3-source of the gas room, 4-pump-line, 5-vavuum pump, 6-horse, 7-horse
Rotating mechanism, 8-magnet coil, 9-reaction end cap, 10-guide pipeline, the 101-the first pipe portion, the 102-the second pipe portion,
103-the three pipe portion.
Embodiment
With reference to embodiment, the present invention is furture elucidated, it should be understood that following embodiments are only used for
The bright present invention rather than limitation the scope of the present invention.It should be noted that the word "front", "rear" used below in description,
"left", "right", "up" and "down" refer to the direction in accompanying drawing, and word " interior " and " outer " are referred respectively to towards or away from specific
The direction at component geometry center.
Embodiment 1
A kind of mechanism of supplying gas of sensor monocrystalline silicon etching device as shown in Figure 1, it includes reative cell 1, reative cell 1
Upper end be provided with air duct 2, it is connected to the source of the gas room 3 being arranged on outside reative cell 1, and the bottom of reative cell 1 is set
Pump-line 4 is equipped with, it is connected to the vavuum pump 5 being arranged on outside reative cell 1；The axial location of the reative cell 1 is provided with
Horse 6, it is connected to the horse rotating mechanism 7 being arranged on outside reative cell 1, and it has specifically included motor；Outside the reative cell 1
Side is provided with magnet coil 8；The upper surface of the reative cell is provided with reaction end cap 9, and it uses hollow structure, the snorkel
Road 2 is extended to inside reaction end cap 9；Multiple guide pipelines 10 are provided among the lower surface of the reaction end cap 9, each is led
Feed channel 10 includes the first pipe portion 101, the second pipe portion 102 and the 3rd pipe portion 103, wherein, the first pipe portion 101 is connected to instead
Answer inside end cap 9, the 3rd pipe portion 103 is connected to inside reative cell 1, and the second pipe portion 102 is arranged at the first pipe portion 101 and the 3rd pipe
Between portion 102；The diameter in the vertical direction of first pipe portion 101 is gradually reduced, and the diameter of the 3rd pipe portion 102 is in vertical side
Gradually increase upwards.
As shown in Fig. 2 the lower surface of the reaction end cap is provided with 3 groups of guide pipelines, wherein, in every group of guide pipeline
Any guide pipeline and the distance between reaction end cap axis are different；3 groups of guide pipelines are respectively positioned at the axle of reaction end cap 9
Line position, 1/3 diametrical position and 2/3 diametrical position, wherein, included in the guide pipeline of the axial location of reaction end cap 9
There is a guide pipeline 10, it is coaxial with reaction end cap 9, and remaining two groups of guide pipeline includes 3 guide pipelines 10.Using
Above-mentioned design, it may be such that distribution of the reacting gas inside reative cell is spent and is significantly improved.
Using the mechanism of supplying gas of the sensor monocrystalline silicon etching device of above-mentioned technical proposal, it can be by reacting in end cap
Hollow structure so that after reacting gas is by air duct, reative cell is passed through by multiple guide pipelines of reactive end base end face
It is internal；The structure setting of guide pipeline so that it forms pressure difference between the first pipe portion and the 3rd pipe portion so that reacting gas can
Be passed through among reative cell rapidly, and by pressure difference avoid reacting gas return to reaction end cap among, to cause leaking for gas, from
And cause the importing efficiency of gas, and the sealing of reative cell is improved.
Embodiment 2
As a modification of the present invention, in the guide pipeline 10, the length of the first pipe portion 101 is the 3rd pipe portion 102
The 1/5 of length, it may be such that caused negative-pressure adsorption effect is improved between the first pipe portion and the 3rd pipe portion, so that bringing about the desired sensation
The efficiency that body imports is improved, and guide pipeline is also improved for the barriering effect of reative cell internal gas.
As a modification of the present invention, in the guide pipeline, the length of the second pipe portion is at most 1 centimetre.
The remaining features and advantages of the present embodiment are same as Example 1.
Embodiment 3
As a modification of the present invention, the connection end of the reaction end cap 9 and reative cell 1 is provided with sealing ring.
As a modification of the present invention, the connection end of the air duct 2 and reaction end cap 9 is provided with sealing ring.
Using above-mentioned design, it can pass through multi-sealed processing so that the sealing effectiveness of reative cell internal gas is improved.
The remaining features and advantages of the present embodiment are same as Example 2.
Claims (6)
1. a kind of mechanism of supplying gas of sensor monocrystalline silicon etching device, it includes reative cell, and the upper end of reative cell is provided with
Air duct, it is connected to the source of the gas room being arranged on outside reative cell, and the bottom of reative cell is provided with pump-line, and it is connected
To the vavuum pump being arranged on outside reative cell；The axial location of the reative cell is provided with horse, and it, which is connected to, is arranged on reaction
The horse rotating mechanism of outdoor；Magnet coil is provided with the outside of the reative cell；Characterized in that, the upper end of the reative cell
Face is provided with reaction end cap, and it uses hollow structure, and the air duct extends to reaction cover internal；The reaction end cap
Multiple guide pipelines are provided among lower surface, each guide pipeline includes the first pipe portion, the second pipe portion and the 3rd pipe
Portion, wherein, the first pipe portion is connected to reaction cover internal, and the 3rd pipe portion is connected to inside reative cell, and the second pipe portion is arranged at
Between one pipe portion and the 3rd pipe portion；The diameter in the vertical direction of first pipe portion is gradually reduced, and the diameter of the 3rd pipe portion exists
Gradually increase on vertical direction, the lower surface of the reaction end cap, which is provided with least four guide pipeline and is able to form at least 2 groups, leads
Feed channel, every group of guide pipeline are formed by least one axis on reacting end cap into the guide pipeline of rotational symmetry.
2. according to the mechanism of supplying gas of the sensor monocrystalline silicon etching device described in claim 1, it is characterised in that the reactive end
The lower surface of lid is provided with 3 groups of guide pipelines, wherein, any guide pipeline in every group of guide pipeline and reaction end cap axis it
Between distance it is different.
3. according to the mechanism of supplying gas of the sensor monocrystalline silicon etching device described in claim 2, it is characterised in that the airway tube
In road, the length of the first pipe portion is the 1/5 to 1/4 of the 3rd pipe portion length.
4. according to the mechanism of supplying gas of the sensor monocrystalline silicon etching device described in claim 3, it is characterised in that the airway tube
In road, the length of the second pipe portion is at most 1 centimetre.
5. according to the mechanism of supplying gas of the sensor monocrystalline silicon etching device described in claim 4, it is characterised in that the reactive end
The connection end of lid and reative cell is provided with sealing ring.
6. according to the mechanism of supplying gas of the sensor monocrystalline silicon etching device described in claim 5, it is characterised in that the snorkel
The connection end in road and reaction end cap is provided with sealing ring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510399724.2A CN104979248B (en) | 2015-07-09 | 2015-07-09 | The mechanism of supplying gas of sensor monocrystalline silicon etching device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510399724.2A CN104979248B (en) | 2015-07-09 | 2015-07-09 | The mechanism of supplying gas of sensor monocrystalline silicon etching device |
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| CN104979248A CN104979248A (en) | 2015-10-14 |
| CN104979248B true CN104979248B (en) | 2018-01-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510399724.2A Active CN104979248B (en) | 2015-07-09 | 2015-07-09 | The mechanism of supplying gas of sensor monocrystalline silicon etching device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108998834A (en) * | 2018-07-26 | 2018-12-14 | 芜湖凯兴汽车电子有限公司 | A kind of sensor monocrystalline silicon etching device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5445677A (en) * | 1993-05-21 | 1995-08-29 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for manufacturing semiconductor and method of manufacturing semiconductor |
| CN102420120A (en) * | 2011-11-04 | 2012-04-18 | 中国科学院微电子研究所 | Air intake structure |
| CN203297744U (en) * | 2013-06-07 | 2013-11-20 | 王一 | Door shaft hermetic seal of air door baffle door |
| CN203373421U (en) * | 2013-07-02 | 2014-01-01 | 深圳市捷佳伟创新能源装备股份有限公司 | MOCVD (Metal Oxide Chemical Vapor Deposition) reaction equipment |
| CN204792716U (en) * | 2015-07-09 | 2015-11-18 | 江苏德尔森传感器科技有限公司 | Mechanism of supplying gas of sensor monocrystalline silicon etching device |
-
2015
- 2015-07-09 CN CN201510399724.2A patent/CN104979248B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5445677A (en) * | 1993-05-21 | 1995-08-29 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for manufacturing semiconductor and method of manufacturing semiconductor |
| CN102420120A (en) * | 2011-11-04 | 2012-04-18 | 中国科学院微电子研究所 | Air intake structure |
| CN203297744U (en) * | 2013-06-07 | 2013-11-20 | 王一 | Door shaft hermetic seal of air door baffle door |
| CN203373421U (en) * | 2013-07-02 | 2014-01-01 | 深圳市捷佳伟创新能源装备股份有限公司 | MOCVD (Metal Oxide Chemical Vapor Deposition) reaction equipment |
| CN204792716U (en) * | 2015-07-09 | 2015-11-18 | 江苏德尔森传感器科技有限公司 | Mechanism of supplying gas of sensor monocrystalline silicon etching device |
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| CN104979248A (en) | 2015-10-14 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20160321 Address after: 215600, Jiangsu Suzhou Zhangjiagang Free Trade Zone, Hong Kong and Macao Road 15 sensor industry park Applicant after: Mou Heng Address before: 215600 Jiangsu, Suzhou, Zhangjiagang Free Trade Zone, Hong Kong and Macao road sensor industry park Applicant before: The gloomy sensor Science and Technology Ltd. of Jiangsu Dare |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20160407 Address after: 400714 Chongqing District of Beibei city and high-tech Industrial Park Road No. 5, No. 317 of the Milky way Applicant after: Chongqing Adelson Sensor Technology Co., Ltd. Address before: 215600, Jiangsu Suzhou Zhangjiagang Free Trade Zone, Hong Kong and Macao Road 15 sensor industry park Applicant before: Mou Heng |
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Effective date of registration: 20210414 Address after: 210000 Zhongguancun Software Park, 7 Yingcui Road, Jiangjun Avenue, Jiangning Development Zone, Nanjing City, Jiangsu Province Patentee after: JIANGSU DER SENSOR HOLDINGS Ltd. Address before: 400714 no.5-317, Yunhan Avenue, Shuitu hi tech Industrial Park, Beibei District, Chongqing Patentee before: Chongqing Adelson Sensor Technology Co.,Ltd. |
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| TR01 | Transfer of patent right |