CN203346473U - Substrate and graphite plate applicable to chemical vapor deposition process - Google Patents
Substrate and graphite plate applicable to chemical vapor deposition process Download PDFInfo
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- CN203346473U CN203346473U CN 201320326603 CN201320326603U CN203346473U CN 203346473 U CN203346473 U CN 203346473U CN 201320326603 CN201320326603 CN 201320326603 CN 201320326603 U CN201320326603 U CN 201320326603U CN 203346473 U CN203346473 U CN 203346473U
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Abstract
The utility model provides a substrate and graphite plate applicable to a chemical vapor deposition process. The substrate is characterized by taking the shape of a fan; and in order to take advantage of the conventional circular substrate to manufacture the substrate, the central angle of the fan-shaped substrate is 360 degrees/N, wherein N is a natural number greater than or equal to 2 but smaller than or equal to 6. The utility model further provides the graphite plate. The graphite plate comprises substrate bearing surfaces, wherein the substrate bearing surfaces are provided with accommodating grooves for accommodating the substrates. The fan-shaped substrates can be arranged on the graphite plate more compactly than the circular substrates, so that the utilization ratio of the graphite plate is improved and the yield of chemical vapor deposition equipment is improved; compared with a polygonal substrate, the fan-shaped substrate can be formed by segmenting a circular substrate, so that the fan-shaped substrate is convenient to process and manufacture, the waste of substrate materials can be avoided, the production cost is reduced and application requirements are met.
Description
Technical field
The utility model relates to chemical vapour deposition (CVD) technical field, particularly for substrate and the graphite plate of chemical vapor deposition method.
Background technology
The organometallics chemical vapour deposition (Metal-organic Chemical Vapor DePosition,
Be called for short MOCVD) be a gordian technique for preparing compound semiconductor film.MOCVD is usingd the hydride etc. of the organic compound of III family, II family element and V, VI family element as crystal growth starting material, in the pyrolysis mode at the enterprising promoting the circulation of qi phase epitaxy of substrate, the thin layer monocrystal material of grow various III-V family, II-VI compound semiconductor and their multivariate solid solution.Because the MOCVD method is the needed film that the mode by starting material being carried out to thermolysis obtains at the enterprising promoting the circulation of qi phase epitaxy of substrate, therefore, substrate is very important for MOCVD.
Below the principle of existing chemical vapor deposition method described.Particularly, take MOCVD as example, please refer to the structural representation of the existing chemical vapor deposition method equipment shown in Fig. 1.
Be provided with the spray header 200 and the graphite plate 300 that are oppositely arranged in reaction chamber 100.Described graphite plate 300 has substrate supporting face 310, substrate supporting face 310 is provided with a plurality of accepting groove (not shown), the corresponding a slice substrate 320 of placing in each accepting groove, the material of substrate 320 is generally sapphire, zinc oxide, silicon carbide, silicon, gallium arsenide etc.Spray header 200, as the diffuser of MOCVD reaction, provides reactant gases for the substrate to being positioned on graphite plate 300.The below of described graphite plate 300 also is provided with heating unit 400, and 400 pairs of graphite plates 300 of described heating unit are heated, and graphite plate 300 intensification of being heated, can be heated substrate 320 with heat exchange pattern.Make between reactant gases and carry out chemical reaction, thereby at substrate 320 surface deposition epitaxial material layers.
Yet, existing substrate has the following disadvantages and defect: particularly, as shown in Figure 2, the substrate of prior art is all circular basically, a plurality of circular substrate 320 are arranged on substrate supporting face 310, have more wasted space between circular substrate 320, cause the service efficiency of substrate supporting face 310 areas of graphite plate 300 to reduce, the output of chemical vapor depsotition equipment is on the low side.Rate of utilization for substrate supporting face 310 areas that improve graphite plate 300, proposed use Polygons substrate, as square substrate, trilateral substrate etc. in prior art; Yet, in prior art, square substrate 330 as shown in Figure 3 or other Polygons substrates, all by circular substrate 320 is cut and obtained, can produce the residue of scrap stock, and the material of substrate is generally the materials such as expensive sapphire, thereby cause the waste of substrate material, cause cost higher.
The utility model content
The problem existed in order to solve above-mentioned prior art, the purpose of this utility model is to provide a kind of substrate for chemical vapor deposition method, to improve the utilization ratio of graphite plate, thereby has improved the output of chemical vapor depsotition equipment, reduce production cost, met the requirement of application.
The utility model provides a kind of substrate for chemical vapor deposition method, and described substrate is fan-shaped, and the fan-shaped central angle of described fan-shaped substrate is 360 °/N, and wherein N is more than or equal to 2 natural number.
Preferably, N is less than or equal to 6 natural number.
Preferably, described fan-shaped substrate is semi-circular substrate, or 1/6 circular substrate.
Preferably, when N is more than or equal to 3, the central angle of described fan-shaped substrate is fillet.
Preferably, the angle at the circular arc two ends of described fan-shaped substrate is fillet.
Preferably, the fillet radius of described fillet all is more than or equal to 1mm.
Another purpose of the present utility model also is to provide a kind of graphite plate for chemical vapor deposition method, this graphite plate has the substrate supporting face, described substrate supporting face is provided with the accepting groove for accommodating the above substrate, wherein, the shape of described accepting groove is corresponding with described substrate shape, for the utilization ratio that improves graphite plate the waste that can avoid the circular substrate material.
Compared with prior art, the utlity model has following advantage: the substrate that the utility model provides is fan-shaped, fan-shaped central angle is 360 °/N, N is for being more than or equal to 2, described fan-shaped substrate can be formed by equal portions cutting by an existing common circular substrate, with respect to the Polygons substrate, not there will be scrap stock, avoid the waste of circular substrate material.This fan-shaped substrate is contained in the corresponding accepting groove be arranged on graphite plate, and the ratio circular substrate that can arrange is more tight, has improved the utilization ratio of graphite plate, has improved the output of chemical vapor depsotition equipment, has reduced production cost, has met the requirement of application.
The accompanying drawing explanation
Fig. 1 is the structural representation of the MOCVD equipment of prior art.
Fig. 2 is the schematic layout pattern of circular substrate in graphite plate.
Fig. 3 is square substrate cutting schematic diagram.
Fig. 4 is the schematic layout pattern of square substrate in graphite plate.
Fig. 5 is the substrate cutting schematic diagram of the utility model embodiment 1.
Fig. 6 is the schematic layout pattern of the utility model embodiment 1 substrate in graphite plate.
Fig. 7 is the substrate cutting schematic diagram of the utility model embodiment 2.
Fig. 8 is the schematic layout patterns of the utility model embodiment 2 substrates in graphite plate.
Embodiment
Technique means and the effect thereof in order to set forth better the utility model, taked, be described in detail below in conjunction with embodiment of the present utility model and accompanying drawing thereof, and wherein, identical label means identical parts all the time.
The output of existing chemical vapor depsotition equipment is on the low side, and production cost is higher, can't meet the requirement of application.Study discovery through the contriver, the layout of the substrate of placing in the graphite plate due to existing chemical vapor depsotition equipment is unreasonable, cause the utilization ratio of graphite plate on the low side, and caused the number of the substrate of each furnaceman's skill of chemical vapor depsotition equipment to be restricted.The graphite plate that the existing diameter of take is 18 inches, the circular substrate that diameter is 4 inches is example, wherein can place at most 12, and the utilization ratio on graphite plate surface is only 59%, and the utilization ratio of graphite plate is on the low side.The utilization ratio of graphite plate described in the utility model refers to, the per-cent of the area sum of whole substrates of placing on graphite plate and the substrate supporting face of graphite plate.
The structure of contriver's consideration based on existing substrate and graphite plate carried out rational layout to the substrate of placing in graphite plate, to improve the utilization ratio to graphite plate.As shown in Figure 2, because existing substrate is normally circular, layout in any case, always having part graphite plate 300 between adjacent circular substrate 320 can't utilize.In order to address the above problem, use Polygons substrate has been proposed, as square substrate 330, trilateral substrate etc., and the corresponding Polygons substrate accepting groove that is provided for placing the Polygons substrate in graphite plate 300, as shown in Figure 3 and Figure 4, make between adjacent square substrate 330 and do not have graphite plate 300 to expose, as much as possible graphite plate 300 is filled up, maximally utilise graphite plate 300, improved the utilization ratio of graphite plate 300.Based on this layout, the substrate of placing in graphite plate 300 be square, accordingly, the substrate accepting groove in graphite plate 300 be shaped as square.Wherein, circular substrate 320 cuttings that square substrate 330 is 4 inches by diameter are made.The number of the square substrate 330 of placing in the known graphite plate 300 that is 18 inches at diameter is 21, utilization ratio to graphite plate 300 is 66%, although compare with respect to place common circular substrate 320 in graphite plate 300, also improved the utilization ratio to graphite plate 300.Yet in prior art, square substrate 330 is that it cuts the waste that remaining scrap stock have caused substrate material by circular substrate 320 is cut and obtained.
The pros and cons of comprehensive circular substrate 320 and Polygons substrate, the utility model proposes fan-shaped substrate, in order to utilize existing circular substrate, makes, and fan-shaped central angle is 360 °/N, and wherein N is more than or equal to 2 natural number.
Embodiment 1
Make N=2 in the present embodiment, the semicircle substrate 340 that fan-shaped central angle is 180 ℃, described semicircle substrate 340 is split to form by existing 320 pairs half common of circular substrate, there is no the residue of scrap stock, has avoided the waste of substrate material.The material of circular substrate 320 described in the utility model can be for sapphire, silicon carbide, silicon, zinc oxide or gallium arsenide a kind of, in the present embodiment, the material of substrate is sapphire.
For the technical solution of the utility model is described better, please in conjunction with the schematic layout pattern of semicircle substrate in graphite plate of the present embodiment shown in Fig. 6.For the ease of signal, only show the face of the substrate supporting towards spray header 200 310 of graphite plate 300 in figure and be arranged in the semicircle substrate 340 on substrate supporting face 310.
The maximum number of the circular substrate 320 that the diameter that can place on the known graphite plate 300 that is 18 inches at diameter is 4 inches is 12, its optimal location as shown in Figure 2, substrate supporting face 310 center layout of graphite plate 300 have 3 circular substrate 320, these 3 circular substrate 320 are equilateral triangle arranges, and this 3 circular substrate 320 also are equilateral triangle with other circular substrate 320 on every side and arrange.Remaining 9 circular substrate 320 is divided into 3 groups, three every group, also forms equilateral triangle and arranges.Described optimal location refers to, while in graphite plate, placing substrate, and the corresponding layout of the maximum number of the substrate that can place.Based on described optimal location, in the time of can guaranteeing in graphite plate to place substrate, to the utilization ratio maximum of graphite plate.
As shown in Figure 5,320 pairs of hemisects of the circular substrate that described semicircle substrate 340 is 4 inches by diameter are made, and being placed on the corresponding substrate accepting groove be provided with on graphite plate 300, the size and dimension of described substrate accepting groove is identical with the size and dimension of semicircle substrate 340.While on the substrate supporting face 310 of graphite plate 300, directly putting semicircle substrate 340, by repeatedly different layouts, the number of placing on the graphite plate 300 that semicircle substrate 340 is 18 inches at diameter is 27.Based on this layout, to the utilization ratio of graphite plate 300, be 67%, and prior art adopts common circular substrate 320 to be placed on the utilization ratio to graphite plate 300 in graphite plate 300, be only 59%.
Visible, compared to circular substrate 320, described semicircle substrate 340 is arranged more tight on substrate supporting face 310, has improved the utilization ratio of graphite plate 300; And, with respect to the Polygons substrate, as square substrate 330, described semicircle substrate 340 can half-and-half be split to form by circular substrate 320 is complete, can not cause the waste of circular substrate 320 materials, saved material cost.And the described semicircle substrate 340 of the present embodiment, its central angle is 180 °, so its central angle place is straight line, makes semicircle substrate 340 when being heated, and can not produce concentrated stress at the central angle place, reduces the generation of slight crack.Preferably, as shown in Figure 5, the angle at semicircle substrate 340 circular arc two ends is fillet, and wherein the fillet radius of fillet is not less than 1mm, is understandable that, fillet can reduce the stress concentration at place, angle, circular arc two ends, prevents that slight crack from producing.
Embodiment 2
Although it is example that the present embodiment be take the graphite plate of 18 inches, substrate layout structure to its substrate supporting face is illustrated, but, in the situation that the shape of substrate and size are constant, if the needs according to application, the diameter of changing graphite plate is 16 inches, 20 inches etc., is understandable that, the optimal location that it is corresponding and number also need the corresponding maximum utilization that could obtain the surface of graphite plate of adjusting.Certainly, according to the demand of application, the diameter of described circular substrate can also be 2 inches, 6 inches, 8 inches etc., and those skilled in the art can be selected as required.
In sum, improvement of the present utility model is that substrate shape is fan-shaped, in order to utilize existing circular substrate, makes, and fan-shaped central angle is 360 °/N, and more preferably, N is more than or equal to 2 and be less than or equal to 6 natural number.The ratio circular substrate that the fan-shaped substrate that the utility model provides can be arranged on graphite plate is more tight, has improved the utilization ratio of graphite plate, has improved the output of chemical vapor depsotition equipment; And, with respect to the Polygons substrate, the substrate that the utility model provides can be split to form by a circular substrate, both has been convenient to processing and fabricating, avoids again the waste of substrate material, has reduced production cost, met the requirement of application.
The utility model is described by above-mentioned related embodiment, yet above-described embodiment does not limit scope of the present utility model only for implementing example of the present utility model.Every spirit and interior modification and impartial setting of category be contained in claims includes in scope of the present utility model.
Claims (7)
1. the substrate for chemical vapor deposition method, it is characterized in that: described substrate is fan-shaped, and the fan-shaped central angle of described fan-shaped substrate is 360 °/N, and wherein N is more than or equal to 2 natural number.
2. substrate according to claim 1, is characterized in that, described N is less than or equal to 6 natural number.
3. substrate according to claim 1 and 2, is characterized in that, described fan-shaped substrate is semi-circular substrate, or 1/6 circular substrate.
4. substrate according to claim 1, is characterized in that, when N is more than or equal to 3, the central angle of described fan-shaped substrate is fillet.
5. substrate according to claim 1, is characterized in that, the angle at the circular arc two ends of described fan-shaped substrate is fillet.
6. according to the described substrate of claim 4 or 5, it is characterized in that, the fillet radius of described fillet is more than or equal to 1mm.
7. the graphite plate for chemical vapor deposition method, there is the substrate supporting face, it is characterized in that: described substrate supporting face is provided with for the accommodating accepting groove as the described substrate of claim 1 to 6 any one claim, the shape of described accepting groove is corresponding with the shape of described substrate, for increasing the utilization ratio of graphite plate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201320326603 CN203346473U (en) | 2013-06-06 | 2013-06-06 | Substrate and graphite plate applicable to chemical vapor deposition process |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201320326603 CN203346473U (en) | 2013-06-06 | 2013-06-06 | Substrate and graphite plate applicable to chemical vapor deposition process |
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| CN203346473U true CN203346473U (en) | 2013-12-18 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114959656A (en) * | 2022-06-10 | 2022-08-30 | 福建兆元光电有限公司 | Method for improving productivity of chemical vapor deposition machine |
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2013
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114959656A (en) * | 2022-06-10 | 2022-08-30 | 福建兆元光电有限公司 | Method for improving productivity of chemical vapor deposition machine |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131218 Termination date: 20140606 |