CN203326917U - Apparatus increasing output pulse frequency of magnetron sputtering pulse power supply - Google Patents
Apparatus increasing output pulse frequency of magnetron sputtering pulse power supply Download PDFInfo
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- CN203326917U CN203326917U CN2013203068401U CN201320306840U CN203326917U CN 203326917 U CN203326917 U CN 203326917U CN 2013203068401 U CN2013203068401 U CN 2013203068401U CN 201320306840 U CN201320306840 U CN 201320306840U CN 203326917 U CN203326917 U CN 203326917U
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- switching tube
- frequency
- magnetron sputtering
- power supply
- module
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Abstract
The utility model discloses an apparatus increasing the output pulse frequency of a magnetron sputtering pulse power supply. The apparatus comprises a direct current source module, a high-frequency pulse generation module and a magnetron sputtering device which are sequentially connected. The direct current source module and the high-frequency pulse generation module are further respectively connected with a control module. By using the flexibility of an FPGA chip, the apparatus increasing the output pulse frequency of the magnetron sputtering pulse power supply generates multi-path driving signals required by the pulse generation unit. The pulse generation unit is alternately turned on and off through eight switch tubes. Output frequency multiplying is achieved on the premise that the switch frequencies of the switch tubes are not increased. The maximum output frequency of the power supply is improved in an equivalent way. The application range of the power supply to technologies can be further expanded.
Description
Technical field
The utility model belongs to electric and electronic technical field, is specifically related to a kind of device that improves magnetron sputtering pulse power output pulse frequency.
Background technology
The magnetron sputtering ion plating technology, be different from traditional surface heat and process, and desired various parameters can change along with the coating growth process, loads on interior constantly variation on a large scale.This just requires filming equipment to have good reliability and stability, to guarantee product quality.And the magnetic control cathodic power source is one of key equipment in the magnetic control film coating process units, good and bad output and the quality that directly affects coated product of its performance.At present, the magnetron sputtering power supply of development mainly contains rf magnetron sputtering power supply, D. C magnetic control sputter power source, pulsed magnetron sputtering power supply several types both at home and abroad.In the past few years, people have given great concern to improve the magnetron sputtering effect with the pulse power.Application based on AC power in the magnetron sputtering field, the application of the pulse power in the magnetron sputtering field obtained paying close attention to more and more widely.
Pulsed magnetron sputtering can be in the process of reactive sputtering dielectric film, discharges the electric charge of target surface accumulation, prevents that electric discharge from beating the arc phenomenon, and have sputter rate soon, the deposition rate advantages of higher.Pulsed magnetron sputtering has become the generally acknowledged preferred technical process as the insulating material deposition, the magnetron sputtering pulse power of this utilization can provide the stable operating state without arc in deposition, generation is than the plasma of the hotter more high energy of direct current sputtering, scope with larger deposition materials, more excellent film performance.
The frequency of different plated film demand paired pulses sputters has different requirements, therefore, in order to make the pulsed magnetron sputtering power supply, has the larger scope of application, and people are devoted to improve the output pulse frequency of pulsed magnetron sputtering power supply always.The maximum output frequency of the highpowerpulse magnetron sputtering power supply of developing both at home and abroad at present, is generally at 40kHz-100kHz.
The principal element that Limited Pulses magnetron sputtering supply frequency improves is the performance of semiconductor switch device.IGBT can meet the requirement of the withstand voltage anti-stream of power supply, switching frequency usually below 100kHz, although and the switching frequency of MOSFET higher than IGBT, but the ability of its withstand voltage anti-stream but can't meet the requirement of power supply.In order to meet the demand of withstand voltage anti-stream and frequency simultaneously, usually adopt the series-parallel method of MOSFET, but the method had been brought again the problem of all pressing current-sharing in the past.
The utility model content
The purpose of this utility model is to provide a kind of device that improves magnetron sputtering pulse power output pulse frequency, has solved existingly to improve frequency by the series-parallel method of MOSFET and bring the problem of all pressing current-sharing.
The technical solution adopted in the utility model is, a kind of device that improves magnetron sputtering pulse power output pulse frequency, comprise the direct current source module, high-frequency impulse generation module and the magnetic control sputtering device that connect successively, direct current source module, high-frequency impulse generation module also are connected with control module respectively.
Characteristics of the present utility model also are,
The structure of high-frequency impulse generation module wherein is: comprise the switching tube Q be in series
1-1With switching tube Q
1-2, the switching tube Q be in series
2-1With switching tube Q
2-2, the switching tube Q be in series
1-3With switching tube Q
1-4, the switching tube Q be in series
2-3With switching tube Q
2-4, above four series circuits are connected in parallel, switching tube Q
1-1, switching tube Q
2-1, switching tube Q
1-3With switching tube Q
2-3Input with the inductance L of direct current source module, be connected, switching tube Q
1-2, switching tube Q
2-2, switching tube Q
1-4With switching tube Q
2-4Output with the other end of direct current source module, be connected.
The structure of control module wherein is: comprise the data acquisition module, fpga chip and the drive circuit that connect successively, fpga chip is connected with the direct current source module, and drive circuit is connected with high-frequency impulse generation module.
The beneficial effects of the utility model are, utilize the flexibility of fpga chip, produce the required multi-channel drive signal in pulse generation unit, 8 switching tube alternate conduction of pulse generation unit by using and shutoff, realize not improving under the condition of switching tube switching frequency, output frequency doubles, and equivalence has improved the maximum output frequency of power supply, has expanded the scope of application of power supply to technique.
The accompanying drawing explanation
Fig. 1 is the structural representation that the utility model improves the device of magnetron sputtering pulse power output pulse frequency;
Fig. 2 is the fundamental diagram that the utility model improves the device medium-high frequency pulse generating module of magnetron sputtering pulse power output pulse frequency.
In figure, 1. direct current source module, 2. high-frequency impulse generation module, 3. magnetic control sputtering device, 4. control module.
Embodiment
The utility model improves the structure of the device of magnetron sputtering pulse power output pulse frequency, as shown in Figure 1, comprise the direct current source module 1, high-frequency impulse generation module 2 and the magnetic control sputtering device 3 that connect successively, direct current source module 1, high-frequency impulse generation module 2 also are connected with control module 4 respectively.Wherein,
Direct current source module 1 is for generation of the adjustable DC electric current;
High-frequency impulse generation module 2 is for generation of the high frequency power pulse;
Control module 4, for image data, is sent the control signal of direct current source module 1, sends the control signal of high-frequency impulse module 2.
The circuit of high-frequency impulse generation module 2 is: switching tube Q
1-1With switching tube Q
1-2, switching tube Q
2-1With switching tube Q
2-2, switching tube Q
1-3With switching tube Q
1-4, switching tube Q
2-3With switching tube Q
2-4Be IGBT; Switching tube Q
1-1With switching tube Q
1-2Be connected in series switching tube Q
2-1With switching tube Q
2-2Be connected in series switching tube Q
1-3With switching tube Q
1-4Be connected in series switching tube Q
2-3With switching tube Q
2-4Be connected in series switching tube Q
1-1And Q
2-1And Q
1-3And Q
2-3Input with the inductance L of direct current source module 1, be connected, switching tube Q
1-2And Q
2-2And Q
1-4And Q
2-4Output with the other end of direct current source module 1, be connected;
The circuit of control module 4 is: comprise the data acquisition module, fpga chip, the HCLP316 chip drive circuit that connect successively, fpga chip is connected with direct current source module 1;
Switching tube Q in high-frequency impulse generation module 2
1-1And Q
2-1The output substrate connect, switching tube Q
1-3And Q
2-3The output target connect.
As shown in Figure 2, under the driving signal controlling that high-frequency impulse generation module 2 is sent at fpga chip, the course of work in each cycle is:
Time period 1: switching tube Q
1-1With switching tube Q
1-4Open-minded, other switching tubes turn-off;
Time period 2: all switching tubes turn-off;
Time period 3: switching tube Q
1-2With switching tube Q
1-3Open-minded, other switching tubes turn-off;
Time period 4: all switching tubes turn-off;
Time period 5: switching tube Q
2-1With switching tube Q
2-4Open-minded, other switching tubes turn-off;
Time period 6: all switching tubes turn-off;
Time period 7: switching tube Q
2-2With switching tube Q
2-3Open-minded, other switching tubes turn-off;
Time period 8: all switching tubes turn-off.
The utility model improves the device of magnetron sputtering pulse power output pulse frequency, utilize the flexibility of fpga chip, produce the required multi-channel drive signal in pulse generation unit, 8 switching tube alternate conduction of pulse generation unit by using and shutoff, realize not improving under the condition of switching tube switching frequency, output frequency doubles, and equivalence has improved the maximum output frequency of power supply.The utility model can utilize IGBT to produce the pulse that frequency is up to 200kHz, has solved the contradiction between pulsed magnetron sputtering output power of power supply and output frequency, has improved the pulsed magnetron sputtering technique scope of application.
Claims (3)
1. a device that improves magnetron sputtering pulse power output pulse frequency, it is characterized in that, comprise the direct current source module (1), high-frequency impulse generation module (2) and the magnetic control sputtering device (3) that connect successively, direct current source module (1), high-frequency impulse generation module (2) also are connected with control module (4) respectively.
2. the device of raising magnetron sputtering pulse power output pulse frequency according to claim 1, is characterized in that, the structure of described high-frequency impulse generation module (2) is: comprise the switching tube Q be in series
1-1With switching tube Q
1-2, the switching tube Q be in series
2-1With switching tube Q
2-2, the switching tube Q be in series
1-3With switching tube Q
1-4, the switching tube Q be in series
2-3With switching tube Q
2-4, above four series circuits are connected in parallel, switching tube Q
1-1, switching tube Q
2-1, switching tube Q
1-3With switching tube Q
2-3Input with the inductance L of direct current source module (1), be connected, switching tube Q
1-2, switching tube Q
2-2, switching tube Q
1-4With switching tube Q
2-4Output with the other end of direct current source module (1), be connected.
3. the device of raising magnetron sputtering pulse power output pulse frequency according to claim 1, it is characterized in that, the structure of described control module (4) is: comprise the data acquisition module, fpga chip and the drive circuit that connect successively, fpga chip is connected with direct current source module (1), and drive circuit is connected with high-frequency impulse generation module (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203068401U CN203326917U (en) | 2013-05-30 | 2013-05-30 | Apparatus increasing output pulse frequency of magnetron sputtering pulse power supply |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203068401U CN203326917U (en) | 2013-05-30 | 2013-05-30 | Apparatus increasing output pulse frequency of magnetron sputtering pulse power supply |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203326917U true CN203326917U (en) | 2013-12-04 |
Family
ID=49666208
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013203068401U Expired - Fee Related CN203326917U (en) | 2013-05-30 | 2013-05-30 | Apparatus increasing output pulse frequency of magnetron sputtering pulse power supply |
Country Status (1)
| Country | Link |
|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108549452A (en) * | 2018-06-11 | 2018-09-18 | 中国工程物理研究院机械制造工艺研究所 | A kind of pulse parameter control circuit of commutating pulse power supply |
| CN111030314A (en) * | 2019-11-15 | 2020-04-17 | 北京宇航系统工程研究所 | Carrier rocket ground high-power wireless power supply system based on electromagnetic resonance |
| CN112858810A (en) * | 2021-01-07 | 2021-05-28 | 国网陕西省电力公司电力科学研究院 | Transient radiation electric field simulation method, system, device, equipment and application |
-
2013
- 2013-05-30 CN CN2013203068401U patent/CN203326917U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108549452A (en) * | 2018-06-11 | 2018-09-18 | 中国工程物理研究院机械制造工艺研究所 | A kind of pulse parameter control circuit of commutating pulse power supply |
| CN111030314A (en) * | 2019-11-15 | 2020-04-17 | 北京宇航系统工程研究所 | Carrier rocket ground high-power wireless power supply system based on electromagnetic resonance |
| CN112858810A (en) * | 2021-01-07 | 2021-05-28 | 国网陕西省电力公司电力科学研究院 | Transient radiation electric field simulation method, system, device, equipment and application |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131204 Termination date: 20160530 |