CN203277501U - Substrate structure with light reflection layer and semiconductor luminescent source - Google Patents
Substrate structure with light reflection layer and semiconductor luminescent source Download PDFInfo
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- CN203277501U CN203277501U CN 201320260764 CN201320260764U CN203277501U CN 203277501 U CN203277501 U CN 203277501U CN 201320260764 CN201320260764 CN 201320260764 CN 201320260764 U CN201320260764 U CN 201320260764U CN 203277501 U CN203277501 U CN 203277501U
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Abstract
The utility model relates to a substrate structure with a light reflection layer and a semiconductor luminescent source. The substrate structure comprises a base plate; and at least one conductive circuit, at least one illuminant arranging zone and at least one light reflection layer are arranged at the base plate. The conductive circuit consists of at least one first welding pad, at least one second welding pad, at least one first welding plate, at least one second welding plate, at least one first interconnection metal connecting the first welding pad and the first welding plate and at least one second interconnection metal connecting the second welding pad and the second welding plate; and the first welding pad, the second welding pad and the illuminant arranging zone are arranged at a first surface. Besides, one or more of a portion or all of the surface of the conductive circuit, a portion or all of the side surface of the conductive circuit, a portion or all of the first surface of the base plate, a portion or all of the second surface of the base plate, a portion or all of the side surface of the base plate, and a portion or all of the surface of the illuminant arranging zone are located at positions that the light reflection layer cover. Because of arrangement of the light reflection layer, the light absorption effect of the surface of the base plate can be reduced, so that the luminous efficiency of the manufactured semiconductor luminescent source is high.
Description
Technical field
The utility model relates to a kind of substrate for the preparation of the semiconductor light emitting light source, further relates to a kind of board structure with reflection layer and semiconductor light emitting light source.
Background technology
Along with the lifting of luminous efficiency and the decline of manufacturing cost, the field such as that the semiconductor light emitting light source has been widely used in is backlight, display and lighting.The semiconductor light emitting light source includes the polytypes such as LED, COB, module, lamp plate and lamp bar.
In the semiconductor light emitting light source, common board structure comprises base plate, weld pad, pad, interconnecting metal and semiconductor light emitting body setting area, and weld pad, pad and interconnecting metal consist of usually said conducting channel.Weld pad be used for the semiconductor light emitting body on electrode realize that conduction is connected, pad is used for realizing conducting electricity with the external world being connected.Usually can apply the insulating varnish of one deck white at the surperficial backplate surface with conducting channel is not set of above-mentioned conducting channel, to play insulation and protective effect.Because the light reflective properties on white insulating varnish surface is very poor, can absorb the light that the semiconductor light emitting body sends, make the whole lighting efficiency variation of light source.In addition, the insulating varnish of being made by high-molecular organic material, it is heat-resisting, ultraviolet resistance irradiation, high voltage withstanding impact, ageing-resistant and the fire-retardant fireproof grade is all poor, the illuminating source that makes can not satisfy the instructions for use as the general lighting light source, when particularly using, tend to cause that useful life is short, decay is fast and the problems such as poor reliability under adverse circumstances.
The utility model content
A technical problem to be solved in the utility model is, a kind of extinction effect that can reduce backplate surface is provided, board structure and the semiconductor light emitting light source with reflection layer of the luminous efficiency of the illuminating source that makes with raising.
Another technical problem to be solved in the utility model is, provides that a kind of luminous efficiency is high, heat-resisting, ultraviolet resistance irradiation, high voltage withstanding impact property is good, ageing-resistant and the fire-retardant fireproof grade is high board structure and semiconductor light emitting light source with reflection layer.
The technical scheme that its technical problem that solves the utility model adopts is: a kind of board structure with reflection layer is provided, comprise the base plate with first surface and second surface, at least one conducting channel, at least one luminous element setting area and at least one reflection layer are arranged on described base plate, and described conducting channel comprises the first interconnecting metal and at least one second interconnecting metal that is connected described the second weld pad and the second pad of at least one the first weld pad, at least one the second weld pad, at least one the first pad, at least one the second pad, described the first weld pad of at least one connection and the first pad; Described the first weld pad, the second weld pad and luminous element setting area all are arranged on described first surface;
The position that described reflection layer covers comprise described conducting channel surface part or all of, described conducting channel side part or all of, described base plate first surface part or all of, described base plate second surface part or all of, described base plate side partly or entirely and surface, described luminous element setting area partly or entirely in one or more.
In the board structure with reflection layer of the present utility model, described base plate is provided with at least one printing opacity insulating barrier; The position that described printing opacity insulating barrier covers comprise described reflection layer surface part or all of, described reflection layer side part or all of, described base plate first surface part or all of, described base plate second surface part or all of, described base plate side part or all of, described conducting channel surface part or all of, described conducting channel side partly or entirely and surface, described luminous element setting area partly or entirely in one or more;
Cover the described printing opacity insulating barrier of described the first weld pad, the second weld pad, the first pad and the second bond pad surface, be respectively equipped with opening and expose all or part of of described the first weld pad, the second weld pad, the first pad and the second bond pad surface on the position at described the first weld pad of correspondence, the second weld pad, the first pad and the second pad place.
In the board structure with reflection layer of the present utility model, the position that described the first pad is set comprise one or more in described base plate first surface, second surface and described base plate side, the position of described the first interconnecting metal process comprise described first surface, second surface, described base plate the side, run through one or more in described base plate; Or described the first pad is to pass the first spicule that described base plate is connected with described the first weld pad conduction;
The position that described the second pad is set comprise one or more in the first surface of described base plate, second surface and described base plate side, the position of described the second interconnecting metal process comprise described first surface, second surface, described base plate the side, run through one or more in described base plate; Or described the second pad is to pass the second spicule that described base plate is connected with described the first weld pad conduction.
In the board structure with reflection layer of the present utility model, described the first interconnecting metal and/or the second interconnecting metal are arranged on one or more in described base plate first surface, described base plate second surface and described base plate side, and described reflection layer covers on described the first interconnecting metal and/or the second interconnecting metal surface; Or
Described the first pad and/or the second pad are arranged on described base plate second surface, described the first interconnecting metal runs through described base plate and connects described the first weld pad and run through described base plate with the first pad and/or described the second interconnecting metal and be connected described the second weld pad and the second pad, and described reflection layer covers on described the first weld pad and the second weld pad described base plate first surface in addition.
In the board structure with reflection layer of the present utility model, also be provided with at least one base plate insulating barrier on described base plate; The position of described base plate insulating barrier setting comprises one or more in all or part of, described base plate side all or part of of all or part of, described base plate second surface of described base plate first surface;
All or part of and/or the described reflection layer of all or part of, the described luminous element setting area of described conducting channel all or part of is located at described base plate surface of insulating layer.
In the board structure with reflection layer of the present utility model, the position that described luminous element setting area arranges comprises one or more in described base plate first surface, described base plate surface of insulating layer, described reflection layer surface, described the first weld pad surface and described the second weld pad surface.
In the board structure with reflection layer of the present utility model, also be provided with at least one cofferdam on described base plate; The position that described cofferdam arranges comprises one or more in the first surface of described base plate, described conducting channel surface and described reflection layer surface;
It is inboard that described the first weld pad, described the second weld pad and described luminous element setting area are arranged on the cofferdam that is positioned at described base plate first surface, and described the first pad and described the second pad are arranged on outside the cofferdam that is positioned at described base plate first surface or second surface and/or the side of described base plate.
In the board structure with reflection layer of the present utility model, described reflection layer comprises one or more in Ag layer, Al layer, Prague total reflection layer and comprehensive reflector.
In the board structure with reflection layer of the present utility model, described first surface is flat-satin surface or the smooth surface that comprises concavo-convex platform.
The utility model also provides a kind of semiconductor light emitting light source, comprises board structure and luminous element with reflection layer; Described board structure with reflection layer comprises the base plate with first surface and second surface, at least one conducting channel, at least one luminous element setting area and at least one reflection layer are arranged on described base plate, and described conducting channel comprises the first interconnecting metal and at least one second interconnecting metal that is connected described the second weld pad and the second pad of at least one the first weld pad, at least one the second weld pad, at least one the first pad, at least one the second pad, described the first weld pad of at least one connection and the first pad; Described the first weld pad, the second weld pad and luminous element setting area all are arranged on described first surface;
The position that described reflection layer covers comprise described conducting channel surface part or all of, described conducting channel side part or all of, described base plate first surface part or all of, described base plate second surface part or all of, described base plate side partly or entirely and surface, described luminous element setting area partly or entirely in one or more;
Described luminous element is arranged on described luminous element setting area; The first electrode of described luminous element is close to and is conducted electricity and connects described the first weld pad, and perhaps the first electrode of described luminous element conducts electricity with described the first weld pad by conductor wire or conductive layer and is connected; The second electrode of described luminous element is close to and is conducted electricity and connects described the second weld pad, and perhaps the second electrode of described luminous element conducts electricity with described the second weld pad by conductor wire or conductive layer and is connected.
In semiconductor light emitting light source of the present utility model, described luminous element comprises one or more in semiconductor light emitting lamination, luminescence chip, light-emitting diode, chip on board and illuminating module.
Enforcement the utlity model has following beneficial effect:
1, in board structure of the present utility model, the backplate surface that has covered the conducting channel surface and/or do not covered by conducting channel due to reflection layer, can reduce the extinction effect of conducting channel surface and backplate surface, the semiconductor light emitting luminous efficiency of source that this board structure is made is high.
2, in board structure of the present utility model, the backplate surface that covers reflection layer and/or conducting channel, do not covered by conducting channel by the printing opacity insulating barrier, heat-resisting, ultraviolet resistance irradiation, the high voltage withstanding impact property of the semiconductor light emitting light source that makes board structure and make are good, ageing-resistant and the fire-retardant fireproof grade is high, be suitable for using in high temperature, normal temperature and low temperature environment, be suitable for the outdoor open-air occasion and use, be applicable to use under high working voltage.
3, the semiconductor light emitting light source that makes of the utility model board structure when use in all kinds of general lightings fields, has safe class high, long service life, the characteristics such as house anti-aging capability is good.
Description of drawings
The utility model is described in further detail below in conjunction with drawings and Examples, in accompanying drawing:
Fig. 1 is the structural representation of board structure one embodiment of the utility model band reflection layer;
Fig. 2 is the vertical view after board structure shown in Figure 1 is removed the printing opacity insulating barrier;
Fig. 3 is the structural representation of another embodiment of board structure of the utility model band reflection layer;
Fig. 4 is the vertical view after board structure shown in Figure 3 is removed the printing opacity insulating barrier.
Embodiment
As shown in Figure 1, 2, the board structure with reflection layer of the utility model one embodiment comprises the base plate 101 with first surface and second surface, and at least one conducting channel, at least one luminous element setting area 103 and at least one reflection layer 107 are arranged on base plate 101.Wherein, luminous element setting area 103 is arranged on base plate 101 first surfaces.Conducting channel comprises at least one the first weld pad 104a, at least one the second weld pad 104b, at least one the first pad 105a, at least one the second pad 105b, connect the first interconnecting metal 106a of the first weld pad 104a and the first pad 105a and be connected the second weld pad 104b and the second interconnecting metal 106b of the second pad 105b.The first weld pad 104a and the second weld pad 104b are arranged on base plate 101 first surfaces, and insulated from each other.
The position that the first pad 105a is set comprises that one or more in base plate 101 first surfaces, second surface and base plate 101 sides, the position of the first interconnecting metal 106a process comprise base plate 101 first surfaces, base plate 101 second surfaces, base plate 101 sides, run through one or more in base plate 101; Or the first pad 105a passes the first spicule that base plate 101 is connected with the first weld pad 104a conduction.Equally, the position that the second pad 105b is set comprises that one or more in base plate 101 first surfaces, base plate 101 second surfaces and base plate 101 sides, the position of the second interconnecting metal 106b process comprise base plate 101 first surfaces, second surface, base plate 101 sides, run through one or more in base plate 101; Or the second pad 105b passes the second spicule that base plate 101 is connected with the first weld pad 104a conduction.
In the present embodiment, base plate 101 is conductive soleplate, is for example aluminium base conductive soleplate.Be connected for fear of the conduction of 101 of conducting channel and base plates and cause weld pad or inter-pad short circuits, be provided with at least one base plate insulating barrier 102 on base plate 101.The setting position of this base plate insulating barrier 102 is all or part of and/or base plate 101 sides all or part of of all or part of, base plate 101 second surfaces of base plate 101 first surfaces.All or part of and/or the reflection layer 107 of conducting channel all or part of is located at base plate insulating barrier 102 surfaces.This base plate insulating barrier 102 can adopt inorganic non-metallic layer or organic polymer layer to make, and comprises one or more in oxide skin(coating), nitride layer, glassy layer, ceramic layer, glass-ceramic layer, silastic-layer, resin bed and polymeric layer.
Luminous element setting area 103 can be arranged on the surface of base plate insulating barrier 102; Also can perforate on base plate insulating barrier 102, luminous element setting area 103 is set directly on the first surface of base plate 101 by perforate.
The first surface of base plate 101 can be the flat-satin surface, can be also the smooth surface that comprises concavo-convex platform.The surface of concavo-convex platform and the effect of side comprise can be used for that luminous element is set, the cofferdam during as follow-up embedding operation, as one or more in optically focused and reflecting surface.
The position that reflection layer 107 covers comprise the conducting channel surface partly or entirely, the conducting channel side partly or entirely, base plate 101 first surfaces partly or entirely, base plate 101 second surfaces partly or entirely, base plate 101 sides partly or entirely and 103 surfaces, luminous element setting area partly or entirely in one or more.Reflection layer 107 comprises one or more in Ag layer, Al layer, Prague total reflection layer (DBR), comprehensive reflector (ODR).Conducting channel all or part of, or reflection layer 107 is all or part of, or conducting channel and reflection layer 107 all or part of is located at this base plate insulating barrier 102 surfaces.
Concrete, in the present embodiment, base plate insulating barrier 102 has wrapped up base plate 101 first surfaces and second surface, the first weld pad 104a, the first interconnecting metal 106a, the second pad 105b, the second weld pad 104b, the second interconnecting metal 106b and the second pad 105b all are arranged on base plate 101 first surfaces, specifically on the base plate insulating barrier 102 on this first surface.Luminous element setting area 103 is arranged on base plate insulating barrier 102, is positioned at the centre of conducting channel.The first weld pad 104a and the first pad 105a by the first interconnecting metal 106a institute around, and the first weld pad 104a conducts electricity with the first pad 105a by the first interconnecting metal 106a and is connected; The second weld pad 104b and the second pad 105b by the second interconnecting metal 106b institute around, and the second weld pad 104b conducts electricity with the second pad 105b by the second interconnecting metal 106b and is connected.Reflection layer 107 covers on the first interconnecting metal 106a and the second interconnecting metal 106b surface.This reflection layer 107 can corresponding first, second weld pad 104a, 104b and first, second pad 105a, 105b be provided with opening, to expose all or part of of first, second weld pad 104a, 104b and first, second pad 105a, 105b surface.
The first weld pad 104a, the second weld pad 104b, the first pad 105a, the second pad 105b, the first interconnecting metal 106a, the second interconnecting metal 106b can adopt respectively identical or different metal or alloy material to make, comprise one or more in Au, Cu, Al, Ag, Ti, W, Ni, Cr, Pt and alloy thereof, can be single layer structure, can be also multi-layer compound structure.In order to prevent being short-circuited between the first interconnecting metal 106a and the second interconnecting metal 106b, between the first interconnecting metal 106a and the second interconnecting metal 106b, a clearance for insulation 109 is arranged.Guaranteeing under the precondition that insulate between the first interconnecting metal 106a and the second interconnecting metal 106b, clearance for insulation 109 can arrange arbitrarily, its gap width is as far as possible narrow, make large that the surface area of the first interconnecting metal 106a and the second lip-deep reflection layer 107 of interconnecting metal 106b tries one's best, thereby more effectively reduce the extinction effect on base plate 101 surfaces.
Made by insulating material when reflection layer 107 and/or base plate 101 during for non-conductive base plate, reflection layer 107 can extend on base plate 101 first surfaces, second surface and/or base plate 101 sides from first, second interconnecting metal 106a, 106b surface.When reflection layer 107 is made by non-insulating material, during tool conductivity, reflection layer 107 above the first weld pad 104a, the first pad 105a, the second weld pad 104b, the second pad 105b can not established opening, can the first weld pad 104a, the first pad 105a below being positioned at reflection layer 107, the second weld pad 104b, the second pad 105b conduction are connected respectively by reflection layer 107.
Understandable, as another kind of execution mode, first, second pad 105a, 105b also can be arranged on base plate 101 second surfaces, and be positioned on base plate insulating barrier 108, the first interconnecting metal 106a can run through base plate 101 and connects the first weld pad 104a and be connected pad 105a connection, the second interconnecting metal 106b can run through base plate 101 and connect the second weld pad 104b and the second pad 105b, and run through between first, second interconnecting metal 106a, the 106b of base plate 101 and base plate 101 being provided with insulating barrier, to avoid the short circuit of 101 of conducting channel and base plates.Reflection layer 107 can be arranged on base plate 101 first surfaces, or and second surface and side.
Further, also can be provided with at least one printing opacity insulating barrier 108 on base plate 101.The position that printing opacity insulating barrier 108 covers comprise reflection layer 107 surfaces partly or entirely, reflection layer 107 sides partly or entirely, base plate 101 first surfaces partly or entirely, base plate 101 second surfaces partly or entirely, base plate 101 sides partly or entirely, conducting channel surperficial partly or entirely, the conducting channel side partly or entirely and 103 surfaces, luminous element setting area partly or entirely in one or more.Cover the printing opacity insulating barrier 108 on the first weld pad 104a, the second weld pad 104b, the first pad 105a and the second pad 105b surface, be respectively equipped with opening and expose all or part of of the first weld pad 104a, the second weld pad 104b, the first pad 105a and the second pad 105b surface on the position at corresponding the first weld pad 104a, the second weld pad 104b, the first pad 105a and the second pad 105b place.Opening on this printing opacity insulating barrier 108, dimensionally can greater than, be equal to or less than the opening on reflection layer 107; Opening on opening on printing opacity insulating barrier 108 and reflection layer 107 can be not identical in shape can be identical yet.
In the present embodiment, printing opacity insulating barrier 108 covers on reflection layer 107, and the corresponding luminous element of this printing opacity insulating barrier 108 setting area 103 is provided with another opening Naked and exposes this luminous element setting area 103; Be understandable that, printing opacity insulating barrier 108 also can extend on first, second surface or side of base plate 101 from reflection layer 107.
The first weld pad 104a of conducting channel and/or the second weld pad 104b partly or entirely can be arranged on luminous element rest area 103 surfaces, make luminous element directly to be placed on weld pad, and realize that with weld pad conduction is connected.103 surfaces, luminous element setting area partly or entirely reflection layer 107 can be arranged, and/or printing opacity insulating barrier 108.The reflection layer 107 on luminous element rest area 103 surfaces can interconnect with other regional reflection layer 107, also can mutually not connect, and can adopt the same light reflector, also can adopt different reflection layers; Printing opacity insulating barrier 108 and other regional printing opacity insulating barrier 108 on luminous element rest area 103 surfaces can interconnect, and also can mutually not connect, and can adopt identical printing opacity insulating barrier, also can adopt different printing opacity insulating barriers.
Printing opacity insulating barrier 108 can adopt inorganic non-metallic or high-molecular organic material to make, and comprises one or more in oxide skin(coating), nitride layer, glassy layer, silastic-layer, resin bed.Setting by this printing opacity insulating barrier 108, when particularly adopting Inorganic Non-metallic Materials to make printing opacity insulating barrier 108, have the performances such as cold-hot impact, uvioresistant irradiation and high voltage withstanding impact, the cold-hot impact capacity of the semiconductor light emitting light source that can improve this board structure and make, uvioresistant irradiation ability and high voltage withstanding impact capacity, be adapted in high temperature, normal temperature and low temperature environment using, the outdoor open-air occasion uses and is applicable to high working voltage.And the fire retardant insulating grade of this printing opacity insulating barrier 108 is higher, can improve board structure and the fire retardant insulating grade of the semiconductor light emitting light source that makes.
In addition, also can be provided with at least one cofferdam (not shown) on this base plate 101, the position that the cofferdam arranges comprises one or more in the first surface, conducting channel surface of base plate 101 and reflection layer 107 surfaces.The cofferdam can be set directly on base plate 101 first surfaces; First, second interconnecting metal 106a, 106b that conducting channel can be arranged between cofferdam and base plate 101 first surfaces, reflection layer 107, one or more in printing opacity insulating barrier 108 and base plate insulating barrier 102.When on base plate 101 first surfaces, the cofferdam being arranged, it is inboard that the first weld pad 104a, the second weld pad 104b and luminous element setting area 103 are arranged on the cofferdam that is positioned on base plate 101 first surfaces, and the first pad 105a and the second pad 105b are arranged on the outside, cofferdam or base plate 101 second surfaces and/or the side that is positioned at base plate 101 first surfaces.Also can comprise for the position of base plate 101, the first interconnecting metal 106a that are provided with the cofferdam and the second interconnecting metal 106b process and run through the cofferdam and run through the cofferdam and base plate 101 first surface junctions.
Semiconductor light emitting light source with the board structure of this embodiment band reflection layer makes comprises board structure and luminous element with reflection layer, and with reference to figure 1,2, luminous element is arranged on the luminous element setting area 103 of this board structure.Wherein, the first electrode of luminous element is connected with the first weld pad 104a conduction by conductor wire or conductive layer, and the second electrode of luminous element is connected with the second weld pad 104b conduction by conductor wire or conductive layer; Perhaps, the first weld pad 104a and the second weld pad 104b extend on 103 surfaces to the luminous element setting area, and the first electrode of luminous element can be close to and conduct electricity and connects the first weld pad 104a, and connection the second weld pad 104b can is close to and conduct electricity to the second electrode of luminous element.
Luminous element comprises one or more in semiconductor light emitting lamination, luminescence chip, light-emitting diode, chip on board (COB) and illuminating module.When luminous element was semiconductor light emitting lamination and/or luminescence chip, luminous element was wrapped up by one or more at least one phosphor powder layer, at least one fluorescence coating, at least one encapsulated layer, at least one passivation layer and at least one packaging body.
Fluorescence coating comprises one or more in the resin bed that is mixed with at least a fluorescent material, layer of silica gel, glassy layer, glass-ceramic layer, encapsulated layer comprises one or more in resin bed, layer of silica gel, glassy layer, glass-ceramic layer, passivation layer comprises one or more in oxide skin(coating), nitride layer, glassy layer, ceramic layer, glass-ceramic layer, and packaging body comprises one or more in embedding body, preform lens, preform lampshade.The embedding body is by the casting glue solidified forming, and this casting glue comprises resin, silica gel, is mixed with the resin of fluorescent material and/or diffusant, one or more in silica gel; One or more during embedding body forming mode comprises from shaping, pressing mold shaping, casting, filling is shaped in the cofferdam.Preform lens and preform lampshade comprise one or more in resin, silica gel, PMMA, PC, glass, transparent ceramic, the resin that is mixed with fluorescent material and/or diffusant, silica gel, PMMA, PC, glass, transparent ceramic.
This semiconductor light emitting light source, has reduced the extinction effect on conducting channel surface and base plate 101 first surfaces in the board structure, thereby has made the luminous efficiency of semiconductor light emitting light source high with reflection layer 107 due to its board structure.And the printing opacity insulating barrier 108 by the Inorganic Non-metallic Materials making by further arranging in board structure makes semiconductor light emitting light source cold-hot impact capacity strong, is adapted at using in high temperature, normal temperature and low temperature environment; The uvioresistant irradiation ability is strong, is suitable for the outdoor open-air occasion and uses; High voltage withstanding impact capacity is strong, is applicable to use under high working voltage.And this semiconductor light emitting light source is due to the insulating varnish that does not use inflammable and anti-impacting with high pressure poor-performing commonly used at present, and its fire-retardant fireproof and the class of insulation are just higher, when using in all kinds of general lightings fields, has safe class high, long service life, the characteristics such as house anti-aging capability is good.
As shown in Fig. 3,4, the board structure with reflection layer of another embodiment of the utility model, comprise the base plate 201 with first surface and second surface, at least one conducting channel, at least one luminous element setting area 203 and at least one reflection layer 207 are arranged on base plate 201.Wherein, luminous element setting area 203 is arranged on base plate 201 first surfaces.Conducting channel comprises at least one the first weld pad 204a, at least one the second weld pad 204b, at least one the first pad 205a, at least one the second pad 205b, connect the first interconnecting metal 206a of the first weld pad 204a and the first pad 205a and be connected the second weld pad 204b and the second interconnecting metal 206b of the second pad 205b.The first weld pad 204a and the second weld pad 204b are arranged on base plate 201 first surfaces, and insulated from each other.
The position that the first pad 205a is set comprises that one or more in base plate 201 first surfaces, second surface and base plate 201 sides, the position of the first interconnecting metal 206a process comprise base plate 201 first surfaces, second surface, base plate 201 sides, run through one or more in base plate 201; Or the first pad 205a passes the first spicule that base plate 201 is connected with the first weld pad 204a conduction.Equally, the position that the second pad 205b is set comprises that one or more in base plate 201 first surfaces, second surface and base plate 201 sides, the position of the second interconnecting metal 206b process comprise base plate 201 first surfaces, second surface, base plate 201 sides, run through one or more in base plate 201; Or the second pad 205b passes the second spicule that base plate 201 is connected with the first weld pad 204a conduction.
What the present embodiment was different from above-described embodiment is: base plate 201 is non-conductive base plate, and its surface can not need arrange the base plate insulating barrier.Be the insulation property of improving base plate 201 and surface tackiness etc., also the base plate insulating barrier can be set at base plate 201 first surfaces, second surface and/or base plate 201 sides.
In the present embodiment, the first pad 205a and the second pad 205b are arranged on the second surface of base plate 201, the first interconnecting metal 206a runs through base plate 201 and connects the first weld pad 204a and the first pad 205a, and the second interconnecting metal 206b runs through base plate 201 and connects the second weld pad 204b and the second pad 205b.Reflection layer 207 covers on the first weld pad 204a and the second weld pad 204b base plate 201 first surfaces in addition, and between reflection layer 207 and the first weld pad 204a and the second weld pad 204b, a clearance for insulation 209a, 209b is arranged respectively.
Made by insulating material when reflection layer 207 and when non-conductive, this reflection layer 207 can extend to the first weld pad 204a and/or the second weld pad 204b surface, cover part the first weld pad 204a and/or part the second weld pad 204b surface.
Understandable, in this embodiment, conducting channel also can be with reference to above-mentioned Fig. 1,2 illustrated embodiment settings.
Luminous element setting area 203 can be set directly on base plate 201 first surfaces, and reflection layer 207 and printing opacity insulating barrier 208 respectively to should luminous element setting area 203 be provided with opening to expose this luminous element setting area 203.Perhaps, printing opacity insulating barrier 208 is established opening, and luminous element setting area 203 is arranged on reflection layer 207.Perhaps, reflection layer 207 and printing opacity insulating barrier 208 are not all established opening, and luminous element setting area 203 is arranged on printing opacity insulating barrier 208 surfaces.
In addition, also can be provided with at least one cofferdam (not shown) on this base plate 201.The cofferdam can be set directly on base plate 201 first surfaces, and one or more in reflection layer 207 and printing opacity insulating barrier 208 can be arranged between cofferdam and base plate 201 first surfaces.In the present embodiment, the first weld pad 204a, the second weld pad 204b and luminous element setting area 203 are positioned at base plate 201 first surfaces of inboard, cofferdam, the first pad 205a and the second pad 205b are positioned at base plate 201 second surfaces in the outside in cofferdam, first, second interconnecting metal 206a, 206b run through base plate 201 and connect respectively the first weld pad 204a and the first pad 205a and the second weld pad 204b and the second pad 205b.。
Semiconductor light emitting light source with the board structure of this embodiment band reflection layer makes comprises board structure and luminous element with reflection layer, and with reference to figure 3,4, luminous element is arranged on the luminous element setting area 203 of this board structure.Wherein, the first electrode of luminous element is connected with the first weld pad 204a conduction by conductor wire or conductive layer, and the second electrode of luminous element is connected with the second weld pad 204b conduction by conductor wire or conductive layer.The setting of luminous element can with reference to above-described embodiment, not repeat them here.
Understandable, above-mentioned each technical characterictic can combination in any uses and unrestricted.
The above is only embodiment of the present utility model; not thereby limit the scope of the claims of the present utility model; every equivalent structure or equivalent flow process conversion that utilizes the utility model specification and accompanying drawing content to do; or directly or indirectly be used in other relevant technical fields, all in like manner be included in scope of patent protection of the present utility model.
Claims (11)
1. board structure with reflection layer, comprise the base plate with first surface and second surface, it is characterized in that, at least one conducting channel, at least one luminous element setting area and at least one reflection layer are arranged on described base plate, and described conducting channel comprises the first interconnecting metal and at least one second interconnecting metal that is connected described the second weld pad and the second pad of at least one the first weld pad, at least one the second weld pad, at least one the first pad, at least one the second pad, described the first weld pad of at least one connection and the first pad; Described the first weld pad, the second weld pad and luminous element setting area all are arranged on described first surface;
The position that described reflection layer covers comprise described conducting channel surface part or all of, described conducting channel side part or all of, described base plate first surface part or all of, described base plate second surface part or all of, described base plate side partly or entirely and surface, described luminous element setting area partly or entirely in one or more.
2. the board structure with reflection layer according to claim 1, is characterized in that, described base plate is provided with at least one printing opacity insulating barrier; The position that described printing opacity insulating barrier covers comprise described reflection layer surface part or all of, described reflection layer side part or all of, described base plate first surface part or all of, described base plate second surface part or all of, described base plate side part or all of, described conducting channel surface part or all of, described conducting channel side partly or entirely and surface, described luminous element setting area partly or entirely in one or more;
Cover the described printing opacity insulating barrier of described the first weld pad, the second weld pad, the first pad and the second bond pad surface, be respectively equipped with opening and expose all or part of of described the first weld pad, the second weld pad, the first pad and the second bond pad surface on the position at described the first weld pad of correspondence, the second weld pad, the first pad and the second pad place.
3. the board structure with reflection layer according to claim 1 and 2, it is characterized in that, the position that described the first pad is set comprise one or more in described base plate first surface, second surface and described base plate side, the position of described the first interconnecting metal process comprise described first surface, second surface, described base plate the side, run through one or more in described base plate; Or described the first pad is to pass the first spicule that described base plate is connected with described the first weld pad conduction;
The position that described the second pad is set comprise one or more in the first surface of described base plate, second surface and described base plate side, the position of described the second interconnecting metal process comprise described first surface, second surface, described base plate the side, run through one or more in described base plate; Or described the second pad is to pass the second spicule that described base plate is connected with described the first weld pad conduction.
4. the board structure with reflection layer according to claim 3, it is characterized in that, described the first interconnecting metal and/or the second interconnecting metal are arranged on one or more in described base plate first surface, described base plate second surface and described base plate side, and described reflection layer covers on described the first interconnecting metal and/or the second interconnecting metal surface; Or
Described the first pad and/or the second pad are arranged on described base plate second surface, described the first interconnecting metal runs through described base plate and connects described the first weld pad and run through described base plate with the first pad and/or described the second interconnecting metal and be connected described the second weld pad and the second pad, and described reflection layer covers on described the first weld pad and the second weld pad described base plate first surface in addition.
5. the board structure with reflection layer according to claim 3, is characterized in that, also is provided with at least one base plate insulating barrier on described base plate; The position of described base plate insulating barrier setting comprises one or more in all or part of, described base plate side all or part of of all or part of, described base plate second surface of described base plate first surface;
All or part of and/or the described reflection layer of all or part of, the described luminous element setting area of described conducting channel all or part of is located at described base plate surface of insulating layer.
6. the board structure with reflection layer according to claim 5, it is characterized in that, the position that described luminous element setting area arranges comprises one or more in described base plate first surface, described base plate surface of insulating layer, described reflection layer surface, described the first weld pad surface and described the second weld pad surface.
7. the board structure with reflection layer according to claim 1 and 2, is characterized in that, also is provided with at least one cofferdam on described base plate; The position that described cofferdam arranges comprises one or more in the first surface of described base plate, described conducting channel surface and described reflection layer surface;
It is inboard that described the first weld pad, described the second weld pad and described luminous element setting area are arranged on the cofferdam that is positioned at described base plate first surface, and described the first pad and described the second pad are arranged on outside the cofferdam that is positioned at described base plate first surface or second surface and/or the side of described base plate.
8. the board structure with reflection layer according to claim 1 and 2, is characterized in that, described reflection layer comprises one or more in Ag layer, Al layer, Prague total reflection layer and comprehensive reflector.
9. the board structure with reflection layer according to claim 1 and 2, is characterized in that, described first surface is flat-satin surface or the smooth surface that comprises concavo-convex platform.
10. a semiconductor light emitting light source, is characterized in that, comprises board structure and luminous element with reflection layer; Described board structure with reflection layer comprises the base plate with first surface and second surface, at least one conducting channel, at least one luminous element setting area and at least one reflection layer are arranged on described base plate, and described conducting channel comprises the first interconnecting metal and at least one second interconnecting metal that is connected described the second weld pad and the second pad of at least one the first weld pad, at least one the second weld pad, at least one the first pad, at least one the second pad, described the first weld pad of at least one connection and the first pad; Described the first weld pad, the second weld pad and luminous element setting area all are arranged on described first surface;
The position that described reflection layer covers comprise described conducting channel surface part or all of, described conducting channel side part or all of, described base plate first surface part or all of, described base plate second surface part or all of, described base plate side partly or entirely and surface, described luminous element setting area partly or entirely in one or more;
Described luminous element is arranged on described luminous element setting area; The first electrode of described luminous element is close to and is conducted electricity and connects described the first weld pad, and perhaps the first electrode of described luminous element conducts electricity with described the first weld pad by conductor wire or conductive layer and is connected; The second electrode of described luminous element is close to and is conducted electricity and connects described the second weld pad, and perhaps the second electrode of described luminous element conducts electricity with described the second weld pad by conductor wire or conductive layer and is connected.
11. semiconductor light emitting light source according to claim 10 is characterized in that described luminous element comprises one or more in semiconductor light emitting lamination, luminescence chip, light-emitting diode, chip on board and illuminating module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320260764 CN203277501U (en) | 2013-05-14 | 2013-05-14 | Substrate structure with light reflection layer and semiconductor luminescent source |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320260764 CN203277501U (en) | 2013-05-14 | 2013-05-14 | Substrate structure with light reflection layer and semiconductor luminescent source |
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| CN203277501U true CN203277501U (en) | 2013-11-06 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109630910A (en) * | 2018-12-26 | 2019-04-16 | 江门市品而亮照明有限公司 | A kind of illuminator and LED light |
| JP2020526935A (en) * | 2017-07-13 | 2020-08-31 | アラノート・ゲー・エム・ベー・ハー・ウント・コー・カー・ゲーＡｌａｎｏｄ Ｇｍｂｈ ＆ Ｃｏ． Ｋｇ | Reflective composites, especially for surface mount devices (SMDs) and light emitting devices with this type of composite |
| CN113451479A (en) * | 2021-06-11 | 2021-09-28 | 西安瑞芯光通信息科技有限公司 | Packaging structure and preparation method of ultraviolet LED photoelectric chip |
-
2013
- 2013-05-14 CN CN 201320260764 patent/CN203277501U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020526935A (en) * | 2017-07-13 | 2020-08-31 | アラノート・ゲー・エム・ベー・ハー・ウント・コー・カー・ゲーＡｌａｎｏｄ Ｇｍｂｈ ＆ Ｃｏ． Ｋｇ | Reflective composites, especially for surface mount devices (SMDs) and light emitting devices with this type of composite |
| JP7137868B2 (en) | 2017-07-13 | 2022-09-15 | アラノート・ゲー・エム・ベー・ハー・ウント・コー・カー・ゲー | Reflective composites especially for surface mounted devices (SMD) and light emitting devices with such composites |
| US11469357B2 (en) | 2017-07-13 | 2022-10-11 | Alanod Gmbh & Co. Kg | Reflective composite material, in particular for surface-mounted devices (SMD), and light-emitting device with a composite material of this type |
| CN109630910A (en) * | 2018-12-26 | 2019-04-16 | 江门市品而亮照明有限公司 | A kind of illuminator and LED light |
| CN113451479A (en) * | 2021-06-11 | 2021-09-28 | 西安瑞芯光通信息科技有限公司 | Packaging structure and preparation method of ultraviolet LED photoelectric chip |
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