CN203277486U

CN203277486U - LED chip

Info

Publication number: CN203277486U
Application number: CN 201320255462
Authority: CN
Inventors: 康学军; 张冀; 王垚浩; 杜雪红
Original assignee: Foshan Nationstar Semiconductor Co Ltd
Current assignee: Foshan Nationstar Semiconductor Co Ltd
Priority date: 2013-05-10
Filing date: 2013-05-10
Publication date: 2013-11-06
Anticipated expiration: 2023-05-10

Abstract

The utility model provides an LED chip. The LED chip comprises a substrate which comprises a first surface and a second surface arranged oppositely to the first surface, a first conductive type semiconductor layer which is arranged on the first surface, an active layer which is arranged on the first conductive type semiconductor layer, a second conductive type semiconductor layer which is arranged on the active layer, a first electrode which is arranged on the second conductive type semiconductor layer, and a second electrode which is arranged below the second surface of the substrate. The surface of the second conductive type semiconductor layer is not completely covered by the first electrode. The surface of the second conductive type semiconductor layer is provided with a patterned structure, and the patterned structure is provided with a micro structure. The first conductive type is opposite to the second conductive type, and the polarity of the first electrode is opposite to the polarity of the second electrode. The luminous efficiency of an LED is enhanced by the LED chip.

Description

A kind of LED chip

Technical field

The utility model relates to light-emitting diode (LED) field, relates in particular to a kind of LED chip that can improve light extraction efficiency.

Background technology

In recent years, along with the development that deepens continuously of semiconductor lighting, light-emitting diode (LED) is subject to paying close attention to more and more widely with the advantage of its high electro-optical efficiency and environmental protection.Core component in semiconductor lighting product is LED chip, and its research has had development at full speed with production technology, and chip brightness and reliability improve constantly.In the research and development and production process of LED chip, its light extraction efficiency directly affects the luminescent properties of LED.Therefore, the light extraction efficiency of raising LED becomes the focus that the technical staff pays close attention to.

The utility model content

In order to improve the light extraction efficiency of LED, the utility model provides a kind of LED chip.In order to achieve the above object, the utility model provides following technical scheme:

A kind of LED chip comprises,

Substrate, described substrate comprise first surface and the second surface relative with described first surface;

Be positioned at the first conductive type semiconductor layer on the substrate first surface;

Be positioned at the active layer on described the first conductive type semiconductor layer;

Be positioned at the second conductive type semiconductor layer on described active layer;

Be positioned at the first electrode on described second conductive type semiconductor layer, wherein, it is surperficial that described the first electrode not exclusively covers described second conductive type semiconductor layer;

Be positioned at the second electrode of described substrate second surface below;

Wherein, the surface of described second conductive type semiconductor layer has patterned structures, has micro-structural on described patterned structures; Described the first conduction type and described the second conductivity type opposite, the polarity of described the first electrode and described the second electrode is opposite.

Preferably, described micro-structural forms by the surface of dry etching or the described second conductive type semiconductor layer of wet etching.

Preferably, described patterned structures is the regular figure structure.

Preferably, described patterned structures is truncated cone-shaped structure, strip structure, hemispherical dome structure, arcuate structure, trapezium structure or conical structure.

Preferably, described substrate is the heat-conductivity conducting material.

Preferably, described substrate is one or several in silicon, metal or the alloy of the carborundum of gallium nitride, the doping of doping, doping.

Preferably, described the first conductive type semiconductor layer is p type semiconductor layer, and described second conductive type semiconductor layer is n type semiconductor layer.

Preferably, stack gradually P bonded layer, P mirror layer and current-diffusion layer between described substrate and described p type semiconductor layer.

the beneficial effects of the utility model: the LED chip that the utility model provides, be formed with patterned structures on the surface as the second conductive type semiconductor layer of exiting surface, also form micro-structural further on this image conversion structure, make the further alligatoring of surface of semiconductor layer, the thick good fortune in surface has reduced reflection of light by the scattering direction of light, increased the optical transmission rate, the light that satisfies the total reflection law is changed direction, see through the interface when then being reflected back original surface on another surface not by total reflection, so this patterned structures and micro-structural have played anti-reflective function, the light that the active layer of LED chip sends can be removed effectively, thereby improved the light extraction efficiency of LED.

Description of drawings

In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or description of the Prior Art, apparently, accompanying drawing in the following describes is embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.

Fig. 1 is the structural representation of LED chip of the present utility model.

Reference numeral: 01: substrate, 02:P type semiconductor layer, 03: active layer; The 04:N type semiconductor layer, 05:N type electrode, 06:P type electrode, 07:P bonded layer, 08:P mirror layer, 09: current-diffusion layer, 041: patterned structures, 042: micro-structural.

Embodiment

For above-mentioned purpose of the present utility model, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, embodiment of the present utility model is described in detail.

A lot of details have been set forth in the following description so that fully understand the utility model, but the utility model can also adopt other to be different from alternate manner described here and implement, those skilled in the art can be in the situation that do similar popularization without prejudice to the utility model intension, so the utility model is not subjected to the restriction of following public specific embodiment.

Should be appreciated that to be called as when being positioned at another parts " on " or " under " when layer, zone or the such parts of substrate, it can be located immediately on another parts or under, maybe can have intermediate member.

In conjunction with Fig. 1, LED chip structure of the present utility model is described.

Those skilled in the art know, and the LED chip structure is divided into positive assembling structure, inverted structure and vertical stratification.The LED chip that the present embodiment provides is the LED chip of vertical stratification.Compared to the LED chip of positive assembling structure, the heat conductivility of the LED chip of vertical stratification is more better.Reason is as follows:

The P electrode of the LED chip of positive assembling structure and N electrode are in the same side of LED chip, the continuous cross-current of electric current is crossed N-shaped semiconductor layer (n-GaN), cause current density larger, the local pyrexia amount of LED chip is high, because the heat conductivility of substrate especially Sapphire Substrate is relatively poor, heat can not in time distribute, and affects the performance of LED chip.

The present embodiment is take the first conductive type semiconductor layer as p type semiconductor layer, and the second conduction type is that n type semiconductor layer is the structure of example explanation LED chip, and as shown in Figure 1, this LED chip comprises,

Substrate 01, this substrate 01 has first surface and the second surface relative with first surface;

Be positioned at the p type semiconductor layer 02 on substrate 01 first surface;

Be positioned at the active layer 03 on p type semiconductor layer 02;

Be positioned at the n type semiconductor layer 04 on active layer 03;

Be positioned at the N-type electrode 05 on n type semiconductor layer 04, wherein N-type electrode 05 only covers the part surface zone of n type semiconductor layer 04, does not cover the surface of n type semiconductor layer 04 fully;

Be positioned at the P type electrode 06 of substrate 01 second surface below.

Wherein, the substrate that the substrate 01 in the present embodiment can be commonly used for those skilled in the art, as adopting the heat-conductivity conducting material, one or several in silicon, metal or the alloy of the carborundum of the gallium nitride of doping, doping, doping for example.

P type semiconductor layer 02 can adopt P type semiconductor material preparation well known in the art, preferably adopts P type gallium nitride material.N type semiconductor layer 04 can adopt N type semiconductor material preparation well known in the art, preferably adopts the n type gallium nitride layer.Active layer 03 and N-type electrode 05 and P type electrode 06 all can utilize technology well known in the art to obtain.In view of above-mentioned modular construction does not belong to the novel key content of this use, and all can utilize technological means well known in the art to obtain, so, be not described in detail at this.

In the LED chip structure that the present embodiment provides, the surface of n type semiconductor layer 04 is the exiting surface of this LED chip, and the performance of this exiting surface has a great impact the light extraction efficiency of LED chip.The present embodiment is in order to improve the light extraction efficiency of LED chip, and the surface of this n type semiconductor layer 04 is set to non-smooth even curface, has patterned structures 041 on this surface, and also has micro-structural 042 on the surface of patterned structures 041.The existence of patterned structures 041 and micro-structural 042, make the surface of n type semiconductor layer 04 reduce significantly reflection of light, increase the optical transmission rate, the light that satisfies the total reflection law is changed direction, see through the interface when then being reflected back to original surface on another surface not by total reflection, so this patterned structures 041 and micro-structural 042 have played anti-reflective function, the light that the active layer 03 of LED chip sends can be removed effectively, improved the light extraction efficiency of LED.

Need to prove, the described micro-structural 042 of the present embodiment can adopt the method for technological means well known in the art such as dry etching or wet etching to process the patterned surface of n type semiconductor layer 04, make its alligatoring, form the rough micro-structural 042 of a kind of patterned surface.

Further, described patterned structures 041 can be the regular figure structure, also can be random patterned structures.The present embodiment preferably adopts the regular figure structure, is convenient to like this control LED chip rising angle and efficient.The described patterned structures 041 of the present embodiment can also be hemispherical dome structure, arcuate structure or trapezoidal or conical structure for round table-like structure, list structure, can also be the structure of other shapes.

The LED chip of this vertical stratification also comprises the P bonded layer 07 that stacks gradually, P mirror layer 08 and the current-diffusion layer 09 between substrate 01 and p type semiconductor layer 02.

In above-described embodiment, to go out the first conductive type semiconductor layer be p type semiconductor layer to example, and second conductive type semiconductor layer is the situation of n type semiconductor layer.It is n type semiconductor layer that the utility model is equally applicable to the first conductive type semiconductor layer, and second conductive type semiconductor layer is the situation of p type semiconductor layer.Description based on above-described embodiment, it is n type semiconductor layer that those skilled in the art are easy to obtain the first conductive type semiconductor layer, second conductive type semiconductor layer is the structure of the LED chip of p type semiconductor layer, and for the purpose of concise and to the point, the utility model is not described in detail this technical scheme.

The above is only preferred embodiment of the present utility model, is not the utility model is done any pro forma restriction.Although the utility model discloses as above with preferred embodiment, yet is not to limit the utility model.Any those of ordinary skill in the art, do not breaking away from technical solutions of the utility model scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible changes and modification to technical solutions of the utility model, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solutions of the utility model, on foundation technical spirit of the present utility model, to any simple modification made for any of the above embodiments, equivalent variations and modification all still belong in the scope of technical solutions of the utility model.

Claims

1. a LED chip, comprise,

It is characterized in that, the surface of described second conductive type semiconductor layer has patterned structures, has micro-structural on the surface of described patterned structures;

Wherein, described the first conduction type and described the second conductivity type opposite, the polarity of described the first electrode and described the second electrode is opposite.

2. LED chip according to claim 1, is characterized in that, described micro-structural forms by the surface of dry etching or the described second conductive type semiconductor layer of wet etching.

3. LED chip according to claim 1 and 2, is characterized in that, described patterned structures is the regular figure structure.

4. LED chip according to claim 1 and 2, is characterized in that, described patterned structures is truncated cone-shaped structure, strip structure, hemispherical dome structure, arcuate structure, trapezium structure or conical structure.

5. LED chip according to claim 1 and 2, is characterized in that, described substrate is the heat-conductivity conducting material.

6. LED chip according to claim 1 and 2, is characterized in that, at least a in silicon, metal or the alloy of the carborundum of gallium nitride, the doping of doping, doping of described substrate.

7. LED chip according to claim 1 and 2, is characterized in that, described the first conductive type semiconductor layer is p type semiconductor layer, and described second conductive type semiconductor layer is n type semiconductor layer.

8. LED chip according to claim 7, is characterized in that, stacks gradually P bonded layer, P mirror layer and current-diffusion layer between described substrate and described p type semiconductor layer.