CN203277365U - 铝、铜基材分离的to-220框架 - Google Patents

铝、铜基材分离的to-220框架 Download PDF

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Publication number
CN203277365U
CN203277365U CN 201320316010 CN201320316010U CN203277365U CN 203277365 U CN203277365 U CN 203277365U CN 201320316010 CN201320316010 CN 201320316010 CN 201320316010 U CN201320316010 U CN 201320316010U CN 203277365 U CN203277365 U CN 203277365U
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frame
framework
substrate
aluminum
base material
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王进安
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements

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  • Insulated Metal Substrates For Printed Circuits (AREA)

Abstract

本实用新型涉及一种铝、铜基材分离的TO-220框架，包括框架主体，所述的框架主体包括铜基材框架和铝基材框架，所述的铜基材框架通过环氧树脂胶热融在铝基材框架上，所述的铜基材框架上焊接有一对芯片，每一芯片均通过铝线连接侧引脚框，在两个侧引脚框之间设置有中间引脚框，该中间引脚框与铜基材框架一体成型。本实用新型的优点是：改变了传统的TO-220框架结构，实现了基材的分离，铝基材框架作为散热片，铜基材框架用以安装芯片以及作为中间引脚框使用，铝基材框架与铜基材框架中间的环氧树脂胶，实现了二者的绝缘，利用铝的高散热性来降低器件工作时产生的温度。

Description

铝、铜基材分离的TO-220框架
技术领域
本实用新型涉及一种铝、铜基材分离的TO-220框架，用于对TO-220半导体器件的封装。
背景技术
传统的整流器件TO-220框架包括中心框和引脚边框，采用无氧铜或63同材质成型构成，该结构的缺陷在于：导致封装器件在工作时产生的热量不能有效的快速散去，影响分立器件的使用性能的稳定性；而且在使用时，由于散热片与芯片是导通的，还需要增加绝缘措施，耗费人力物力，影响生产效率。
发明内容
为克服现有技术的缺陷，本实用新型提供一种铝、铜基材分离的TO-220框架。本实用新型的技术方案是：一种铝、铜基材分离的TO-220框架，包括框架主体，所述的框架主体包括铜基材框架和铝基材框架，所述的铜基材框架通过环氧树脂胶热融在铝基材框架上，所述的铜基材框架上焊接有一对芯片，每一芯片均通过铝线连接侧引脚框，在两个侧引脚框之间设置有中间引脚框，该中间引脚框与铜基材框架一体成型。
在所述的铝基材框架上设置有螺纹安装孔。
本实用新型的优点是：改变了传统的TO-220框架结构，实现了基材的分离，铝基材框架作为散热片，铜基材框架用以安装芯片以及作为中间引脚框使用，铝基材框架与铜基材框架中间的环氧树脂胶，实现了二者的绝缘，利用铝的高散热性来降低器件工作时产生的温度。
附图说明
图1是本实用新型的主体结构示意图；
图2是图1的A-A剖视图（将芯片和铝线省略）。
具体实施方式
    参见图1和图2，本实用新型涉及一种铝、铜基材分离的TO-220框架，包括框架主体，所述的框架主体包括铜基材框架3和铝基材框架1，所述的铜基材框架3通过环氧树脂胶9热融在铝基材框架1上，所述的铜基材框架3上焊接有一对芯片4，每一芯片4均通过铝线5连接侧引脚框7，侧引脚框7即制作第1引脚和第3引脚的框架，在两个侧引脚框7之间设置有中间引脚框8，该中间引脚框8与铜基材框架3一体成型，在所述的铝基材3上设置有螺纹安装孔2。

Claims (2)

1.一种铝、铜基材分离的TO-220框架，包括框架主体，其特征在于：所述的框架主体包括铜基材框架和铝基材框架，所述的铜基材框架通过环氧树脂胶热融在铝基材框架上，所述的铜基材框架上焊接有一对芯片，每一芯片均通过铝线连接侧引脚框，在两个侧引脚框之间设置有中间引脚框，该中间引脚框与铜基材框架一体成型。
2.根据权利要求1所述的铝、铜基材分离的TO-220框架，其特征在于：在所述的铝基材框架上设置有螺纹安装孔。
CN 201320316010 2013-06-04 2013-06-04 铝、铜基材分离的to-220框架 Expired - Fee Related CN203277365U (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106098670B (zh) * 2016-08-29 2018-05-15 宁波华龙电子股份有限公司 引线框架

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106098670B (zh) * 2016-08-29 2018-05-15 宁波华龙电子股份有限公司 引线框架

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