CN203243233U - Power module for integrated gate commutated thyristor - Google Patents
Power module for integrated gate commutated thyristor Download PDFInfo
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- CN203243233U CN203243233U CN 201320153586 CN201320153586U CN203243233U CN 203243233 U CN203243233 U CN 203243233U CN 201320153586 CN201320153586 CN 201320153586 CN 201320153586 U CN201320153586 U CN 201320153586U CN 203243233 U CN203243233 U CN 203243233U
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- change transistor
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Abstract
The utility model discloses a power module for an integrated gate commutated thyristor. The power module for the integrated gate commutated thyristor comprises an uncontrolled rectifier module, a five-level single-phase power circuit module and a peripheral module, wherein the peripheral module comprises a fan, an input metal terminal, a voltage-current sensor module, an output metal terminal, a drive circuit module, an optical fibre module, a metal housing, a power supply metal terminal and two isolation power supply modules; the uncontrolled rectifier module comprises a three-phase uncontrolled rectifier module, a small heat dissipater and a voltage-dividing capacitor; and the five-level single-phase power circuit module comprises two three-level power units, and each three-level power unit comprises a metal connection element, a large heat dissipater, two neutral-point-clamped diodes, four IGCT (integrated gate commutated thyristor) components and four buffering absorption circuits. The power module for the integrated gate commutated thyristor disclosed by the utility model is compact in structure, small in spatial size, simple and convenient to assemble, and suitable for an MVA high-power IGCT current converter.
Description
Technical field
The utility model belongs to the technical field of semiconductor switch, especially, relate to a kind of integral gate change transistor (Integrated Gate Commutated Thyristor, IGCT) five electrical level power module, it is applicable to can be widely used in the high-power transmission field in MW (Mega Watt) the class large power current transformer.
Background technology
Mesohigh multi-level frequency conversion device is mainly used in the high-power transmission fields such as electric power, colliery, metallurgy, cement, petrochemical industry, boats and ships and railway, and dv/dt is little for its voltage change ratio, and the output voltage current harmonic content is low, and the voltage withstand class of device for power switching is low.The existing mesohigh big-power transducer three level NPC topological structures that adopt, its output phase voltage is three level progression more.H bridge cascade connection type topological structure is also arranged in addition, can obtain different output-voltage levels progression by cascade.Large capacity current transformer is owing to integrating high voltage and large electric current, and the device allowance is not enough, and the stray parameter impact is large, and the device heating amount is large, and the heat radiation difficulty so that the reliability of current transformer reduces, becomes the difficult problem that it faces.
In the high-power applications field, IGBT has that input impedance is high, current density is large, the characteristics of strong turn-off capacity, but its loss is larger; Turn-off thyristor (Gate Turn-Off Thyristor, GTO) loss is less, yet needs expensive and complicated absorbing circuit.IGCT is the modified form device of doing on the basis of GTO, it is as a kind of novel power electronic device, GTO chip and anti-paralleled diode and gate drive circuit are integrated, be connected in low inductance mode in the periphery with its gate driver again, combine the advantage of the low on-state loss of the stable turn-off capacity of transistor and thyristor.IGCT is in the performance of conduction period performance thyristor, and off-phases is and is similar to transistorized characteristic.IGCT adopts hard-drive, resilient coating, transparent emitting stage and the contrary new technology such as lead, make that it has that electric current is large, voltage is high, switching frequency is high, reliability is high, compact conformation, loss is low, the safety operation area is large and in the situation that need not the directly characteristics of tandem working of equalizer circuit, be a kind of more satisfactory MW level mesohigh semiconductor switch device.
The utility model content
Because the defects of prior art; technical problem to be solved in the utility model provides a kind of integral gate change transistor power model; its with neutral-point-clamped/H bridge (NPC/H) five level single-phase-bridge arms, dividing potential drop electric capacity, do not control rectifier bridge, Drive Protecting Circuit and snubber circuit and be integrated in the separate modular, in application, provide a kind of component placement rationally, compact conformation, modularization embodiment that heat-sinking capability is high.
For achieving the above object, the utility model provides a kind of integral gate change transistor power model, and it comprises does not control rectification module, five level single-phase power circuit module and peripheral modules; Wherein, described peripheral module comprises fan, input metal terminal, voltage-current sensor module, output metal terminal, drive circuit module, optic module, metal shell, power supply metal terminal and two insulating power supply modules; The described rectification module of not controlling comprises that three-phase do not control rectification module, little radiator and dividing potential drop electric capacity; Described five level single-phase power circuit modules comprise two three level power unit, and described three level power unit comprise metal fitting, large radiator, two neutral point clamp diodes, four IGCT elements and four snubber circuits.
According to above-mentioned integral gate change transistor power model, wherein, described metal shell is formed by Plate Welding.
According to above-mentioned integral gate change transistor power model, wherein, described IGCT element, neutral point clamp diode, snubber circuit, three-phase are not controlled rectification module, dividing potential drop electric capacity all is fixed on the described metal shell.
According to above-mentioned integral gate change transistor power model, wherein, described three-phase is not controlled rectification module and is fixed on the described little radiator, and realizes that by described metal fitting and described dividing potential drop electric capacity circuit is connected.
According to above-mentioned integral gate change transistor power model, wherein, described two neutral point clamp diodes, four IGCT elements, four snubber circuits all are fixed on the described large radiator.
According to above-mentioned integral gate change transistor power model, wherein, described two three level power cell formation neutral-point-clampeds/H bridge five level single-phase power unit.
According to above-mentioned integral gate change transistor power model, wherein, described large radiator and fan are fixed on described metal shell bottom, and parallel placement.
Therefore, integral gate change transistor power model of the present utility model has following useful technique effect:
(1) adopted the design of two three parallel level power unit of compact conformation, three-phase is not controlled rectification module, voltage-current sensor module, dividing potential drop electric capacity, snubber circuit module, drive circuit module, optic module and insulating power supply module integration to a power model, effectively reduce the equivalent inductance of this commutation circuit;
(2) also help maintenance, maintenance and the element replacement of power model;
(3) compact conformation of power model, bulk is little, and assembling is simple, convenient, is applicable to the high-power IGCT current transformer of MVA.
Description of drawings
Fig. 1 is the electrical structure schematic diagram of the single-phase main circuit of five-level converter of the present utility model;
Fig. 2 is the Facad structure schematic diagram of integral gate change transistor power model of the present utility model.
Embodiment
Be described further below with reference to the technique effect of accompanying drawing to design of the present utility model, concrete structure and generation, to understand fully the purpose of this utility model, feature and effect.
Fig. 1 is the single-phase main circuit electrical structure of five-level converter of the present utility model schematic diagram.Wherein, R is that three-phase is not controlled rectifier bridge, C
A1-C
A2Be dividing potential drop electric capacity, D
1-D
4Be neutral point clamp diode, S
A11-S
A24Be the IGCT element.
Fig. 2 is the Facad structure schematic diagram of integral gate change transistor power model of the present utility model, and it comprises does not control rectification module, five level single-phase power circuit module and peripheral modules.Wherein, peripheral module comprises fan 1, input metal terminal 2, voltage-current sensor module 5, output metal terminal 12, drive circuit module 13, optic module 14, metal shell 15, power supply metal terminal 16 and two insulating power supply modules 17.Do not control rectification module and comprise that three-phase do not control rectification module 3, little radiator 4 and dividing potential drop electric capacity 6.Five level single-phase power circuit modules comprise three level power unit 18 and three level power unit 19.Three level power unit 18 and three level power unit 19 comprise respectively metal fitting 7, large radiator 9, two neutral point clamp diodes 8, four IGCT elements 10, four snubber circuits 11.
Particularly, the utility model adopts the metal shell 15 that is welded take thick shape steel plate for support, its by wire and metal fitting 7 respectively IGCT element 10, neutral point clamp diode 8, snubber circuit 11, three-phase are not controlled rectification module 3, dividing potential drop electric capacity 6 connects and composes five level single-phase power circuit, and IGCT element 10, neutral point clamp diode 8, snubber circuit 11, three-phase are not controlled rectification module 3, dividing potential drop electric capacity 6 all is fixed on the metal shell 15.Three-phase is not controlled rectification module 3 and is fixed on the little radiator 4, and realizes that with dividing potential drop electric capacity 6 circuit is connected by metal fitting 7.Two neutral point clamp diodes 8, four IGCT elements 10, four snubber circuits 11 all are fixed on large radiator 9, consist of three level power unit 19, three level power unit 18 are identical with the structure of three level power unit 19, two identical three level power cell formation neutral-point-clampeds/H bridge (NPC/H) five level single-phase power unit, the power electronic device that five level single-phase power unit comprise realizes that by metal fitting 7 circuit connects.Two large radiators 9 are fixed on the parallel placement in metal shell 15 bottoms with fan 1, realize the air cooling heat radiation.Two insulating power supply modules 17, drive circuit module 13, optic module 14 and voltage-current sensor modules 5 are separately fixed at metal shell 15 bottoms, realize connecting with the circuit of being connected between level single-phase power unit with upper module by wire.Input metal terminal 2 is not controlled rectification module 3 with three-phase and is connected by wire realization circuit, externally connect electrical network by wire and realize the electric energy input, output metal terminal 12 is connected with main circuit by wire, the output of realization electric energy, power supply metal terminal 16 is connected with insulating power supply module 17 by wire.Two insulating power supply modules 17, drive circuit module 13 characteristics of compact layouts are installed in the right side of metal shell 15.Two insulating power supply modules 17 are connected with the voltage-current sensor module with drive circuit module 13 respectively and are connected.Each intermodule mutual spacing of the single-phase main circuit of five-level converter is from very little, distribute compact, between the connection copper bar very short, thereby reduced mutual stray inductance.Voltage-current sensor module 5 is installed in metal shell 15 left sides, is convenient for measuring electric current and voltage.
More than describe preferred embodiment of the present utility model in detail.The ordinary skill that should be appreciated that this area need not creative work and just can make many modifications and variations according to design of the present utility model.Therefore, all in the art technical staff comply with design of the present utility model on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment, all should be in the determined protection range by claims.
Claims (7)
1. an integral gate change transistor power model is characterized in that, comprises not controlling rectification module, five level single-phase power circuit module and peripheral modules; Wherein, described peripheral module comprises fan, input metal terminal, voltage-current sensor module, output metal terminal, drive circuit module, optic module, metal shell, power supply metal terminal and two insulating power supply modules; The described rectification module of not controlling comprises that three-phase do not control rectification module, little radiator and dividing potential drop electric capacity; Described five level single-phase power circuit modules comprise two three level power unit, and described three level power unit comprise metal fitting, large radiator, two neutral point clamp diodes, four IGCT elements and four snubber circuits.
2. integral gate change transistor power model according to claim 1 is characterized in that, described metal shell is formed by Plate Welding.
3. integral gate change transistor power model according to claim 1 is characterized in that, described IGCT element, neutral point clamp diode, snubber circuit, three-phase are not controlled rectification module, dividing potential drop electric capacity all is fixed on the described metal shell.
4. integral gate change transistor power model according to claim 1 is characterized in that, described three-phase is not controlled rectification module and is fixed on the described little radiator, and realizes that by described metal fitting and described dividing potential drop electric capacity circuit is connected.
5. integral gate change transistor power model according to claim 1 is characterized in that, described two neutral point clamp diodes, four IGCT elements, four snubber circuits all are fixed on the described large radiator.
6. integral gate change transistor power model according to claim 1 is characterized in that, described two three level power cell formation neutral-point-clampeds/H bridge five level single-phase power unit.
7. integral gate change transistor power model according to claim 1 is characterized in that, described large radiator and fan are fixed on described metal shell bottom, and parallel placement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320153586 CN203243233U (en) | 2013-03-29 | 2013-03-29 | Power module for integrated gate commutated thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320153586 CN203243233U (en) | 2013-03-29 | 2013-03-29 | Power module for integrated gate commutated thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203243233U true CN203243233U (en) | 2013-10-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320153586 Expired - Fee Related CN203243233U (en) | 2013-03-29 | 2013-03-29 | Power module for integrated gate commutated thyristor |
Country Status (1)
| Country | Link |
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| CN (1) | CN203243233U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2584240C1 (en) * | 2013-12-02 | 2016-05-20 | Делта Электроникс (Шанхай) Ко., Лтд. | Five-level rectifier |
-
2013
- 2013-03-29 CN CN 201320153586 patent/CN203243233U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2584240C1 (en) * | 2013-12-02 | 2016-05-20 | Делта Электроникс (Шанхай) Ко., Лтд. | Five-level rectifier |
| RU2584240C9 (en) * | 2013-12-02 | 2016-08-10 | Делта Электроникс (Шанхай) Ко., Лтд. | Five-level rectifier |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131016 Termination date: 20160329 |