CN205544321U - Novel many inverter of modularization - Google Patents
Novel many inverter of modularization Download PDFInfo
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- CN205544321U CN205544321U CN201620027000.5U CN201620027000U CN205544321U CN 205544321 U CN205544321 U CN 205544321U CN 201620027000 U CN201620027000 U CN 201620027000U CN 205544321 U CN205544321 U CN 205544321U
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Abstract
The utility model relates to a novel many inverter of modularization, including DC power supply, many level control of modularization ware and electric wire netting, many level control of modularization ware is connected with DC power supply, and the electric wire netting is connected with many level control of modularization ware. The utility model discloses with high speed thyristor and gate pole breakable thyristor GTO replacement IGBT, can practice thrift the cost under the prerequisite that satisfies traditional three many inverter of phase module ization over -all propertiess and function, and simultaneously, the utility model provides a novel topological structure easily is used in the many level converter of modularization, improving the power electronic equipment capacity when, and reduce cost.
Description
Technical field
This utility model belongs to the field such as Technics of Power Electronic Conversion and power system, particularly to a kind of novel modular multilevel inverter, can be used for flexible DC power transmission engineering, middle high-pressure motor transmission, distributed power generation, electric propulsion, the high pressure large-power occasions such as power quality controlling.
Background technology
Along with the fast development of Power Electronic Technique, there is the renewable energy source power away from load center in multi-electrical level inverter, the industrial circles such as urban distribution network is powered, the transmission of motor play positive effect, achieve bigger achievement.But there is certain inferior position in high-power application.Modular multilevel inverter (Modular Multilevel Converter, MMC) have economy, flexibly, the quality of power supply is high, voltage and the advantage such as current class is high, controllability is strong, can be by small-sized decentralized power s incoming transport electrical network by the way of economy, environmental protection.
MMC uses the method for submodule series connection, makes AC realize many level, high voltage output by voltage superposition, reduces switching frequency in the case of system equivalent switching frequency is constant.There is compared with traditional inverter obvious advantage technically, be mainly manifested in: the topological structure of high modularization, the Redundancy Design that is prone to, substitutability is strong, have common DC bus, module capacitance voltage is prone to equilibrium, have the advantages such as relatively low harmonic content and electromagnetic interference, fault ride-through capacity is strong, switching loss is little, logical device is few.It is made up of identical additionally, due to each submodule of this structure, so when a submodule goes wrong when, corrupted module can be excised in time, put into new module, it is ensured that system properly functioning.It is also convenient for expanding to more high level simultaneously.Its submodule number is the most, and the voltage of DC side can be the highest, and equivalent switching frequency is the highest, and the harmonic content of AC output voltage is the least.
Power electronic devices plays conclusive effect to the development of power electronic equipment.The electron tube, the transistor that within 1904, occur are that electric electronic current change technology is laid a good foundation.The IGCT that the seventies occurs makes rectification, inversion transformation technique progress into the power electronics frequency conversion epoch.Automatic shutoff high-power bipolar transistor (GTO) its performance that the eighties occurs is considerably beyond half control type device IGCT so that it is capture rapidly leading position in frequency conversion field.The MOSFET (MOSFET) that the initial stage eighties occurs belongs to voltage-type device, drives power little, and safety operation area is big, and switching frequency is high, but this device proof voltage, current capacity are low, limit its range of application.In the later stage eighties, it is a dark horse with the insulated gate bipolar transistor (IGBT) the compound device as representative.IGBT is the compound of MOSFET and BJT, the driving advantage that power is little, switching speed is fast and the advantage that BJT on-state voltage drop is little, current capacity is big of MOSFET is integrated in one, and performance is the most superior.Make the leading device of modern power electronics technology.Enter the nineties, in order to make the compact conformation of power electronic equipment, volume reduce, occur in that detecting, drive, power IC device (IPM) that the function such as protection integrates.The most again on the basis of IPM, the function such as logic, control is integrated, constitute power integrated circuit (PIC).At present, manufacture technique of power electronic device just develops towards high-power, high switching frequency, the direction of driving power highly integrated, low.
The continuous innovation of power electronic devices so that it is application technology is developed rapidly, in the design of modular multilevel inverter submodule SM, occurs in that substantial amounts of novel topological structure.Such as half-bridge module based on IGBT, full-bridge modules, double clamp modules, Clamp three level block and striding capacitance type three level block etc..
The appearance of New Type Power Devices and the development of novel topological structure, improve performance and the capacity of power electronic equipment to a certain extent.But the use of a large amount of power electronic elements, will certainly reduce the security and stability of power electronic equipment, improves the cost of power electronic equipment.
It would therefore be highly desirable to develop on the premise of meeting the over-all properties of modular multilevel inverter, function, while improving power electronic equipment capacity, reduce the power electronic equipment of cost.
Summary of the invention
Goal of the invention
This utility model provides a kind of power electronic equipment, for realizing the transformation of three phase mains, frequency conversion, this function is used in modular multilevel inverter, it is therefore intended that regulating load voltage, electric current, frequency and rotating speed etc., system cost can be greatly reduced.
Technical scheme
This utility model is achieved through the following technical solutions:
A kind of novel modular multilevel inverter, it is characterised in that: including DC source, modular multilevel controller and electrical network, modular multilevel controller is connected with DC source, and electrical network is connected with modular multilevel controller.
Modular multilevel controller is made up of six brachium pontis and reactor, and reactor connects brachium pontis；Each brachium pontis is formed by 2N SM submodule and buffer inductance, and SM submodule connects buffer inductance after being serially connected；Six brachium pontis are divided into the first brachium pontis, the second brachium pontis, the 3rd brachium pontis, four bridge legs, the 5th brachium pontis and the 6th brachium pontis；First brachium pontis and four bridge legs series connection, the second brachium pontis and the series connection of the 5th brachium pontis, the 3rd brachium pontis and the series connection of the 6th brachium pontis；First brachium pontis and the second brachium pontis and the 3rd brachium pontis are in parallel, four bridge legs and the 5th brachium pontis and the parallel connection of the 6th brachium pontis.
First brachium pontis is connected by the buffer inductance of buffer inductance and four bridge legs, and the second brachium pontis is connected by the buffer inductance of buffer inductance and the 5th brachium pontis, and the 3rd brachium pontis is connected by the buffer inductance of buffer inductance and the 6th brachium pontis.
SM submodule is by the first IGCT, second IGCT, 3rd IGCT, 4th IGCT, first fly-wheel diode, second fly-wheel diode, 3rd fly-wheel diode, 4th fly-wheel diode, first Absorption Capacitance, second Absorption Capacitance, 3rd Absorption Capacitance the 4th Absorption Capacitance the 5th Absorption Capacitance, 6th Absorption Capacitance, oneth GTO, 2nd GTO, first backward diode, second backward diode, first forward diode, second forward diode, drive circuit, control circuit, submodule electric capacity forms；Connect with a GTO after first IGCT and the first fly-wheel diode and the first Absorption Capacitance parallel connection and with the second Thyristors in series；Oneth GTO and the first backward diode and the first forward diode are in parallel with the second Absorption Capacitance after connecting；Second IGCT and the second fly-wheel diode and the 3rd Absorption Capacitance are in parallel；Connect with the 2nd GTO after 3rd IGCT and the 3rd fly-wheel diode and the 4th Absorption Capacitance parallel connection and with the 4th Thyristors in series；2nd GTO and the second backward diode and the second forward diode are in parallel with the 5th Absorption Capacitance after connecting；4th IGCT and the 4th fly-wheel diode and the 6th Absorption Capacitance are in parallel；First IGCT and the 3rd IGCT are in parallel, and the second IGCT and the 4th IGCT are in parallel；Control circuit is connected with testing circuit and SM submodule respectively；Submodule electric capacity is connected in parallel between the anode of the first IGCT and the negative electrode of the second IGCT.
Advantage and effect
This utility model has the advantage that and beneficial effect:
This utility model relates to a kind of novel modular multilevel inverter, replaces IGBT with high speed thyristor and gate electrode capable of switching off GTO, it is possible on the premise of meeting conventional three-phase multi-electrical level inverter over-all properties, function, cost-effective；Meanwhile, the novel topological structure that the utility model proposes, it is easy to be used in Modular multilevel converter, while improving power electronic equipment capacity, reduces cost.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Fig. 2 is sub modular structure schematic diagram.
Description of reference numerals:
null1、DC source 2、Modular multilevel controller 3、Electrical network 4、First brachium pontis 5、Second brachium pontis 6、3rd brachium pontis 7、Four bridge legs 8、5th brachium pontis 9、6th brachium pontis 10、Reactor 11、SM submodule 12、Buffer inductance 13、First IGCT 14、Second IGCT 15、3rd IGCT 16、4th IGCT 17、First fly-wheel diode 18、Second fly-wheel diode 19、3rd fly-wheel diode 20、4th fly-wheel diode 21、First Absorption Capacitance 22、Second Absorption Capacitance 23、3rd Absorption Capacitance 24、4th Absorption Capacitance 25、5th Absorption Capacitance 26、6th Absorption Capacitance 27、Oneth GTO 28、2nd GTO 29、First backward diode 30、Second backward diode 31、First forward diode 32、Second forward diode 33、Drive circuit 34、Control circuit 35、Submodule electric capacity.
Detailed description of the invention
Below in conjunction with the accompanying drawings this utility model is described further:
A kind of novel modular multilevel inverter that the utility model proposes, IGBT is replaced with gate level turn-off thyristor GTO and high speed thyristor, can be on the premise of meeting the over-all properties of modular multilevel inverter, function, due to the price of GTO and IGCT IGBT to be far below, thus cost-effective；Meanwhile, the novel topological structure that the utility model proposes, it is easy to in Modular multilevel converter, cost can be reduced while improving power electronic equipment capacity.
Fig. 1 is topological structure schematic diagram of the present utility model, as it can be seen, include DC source 1, modular multilevel controller 2 and electrical network 3, modular multilevel controller 2 is connected with DC source 1, and electrical network 3 is connected with modular multilevel controller 2.
Modular multilevel controller 2 is six brachium pontis and reactor 10 forms, and reactor 10 connects brachium pontis；Each brachium pontis is natural number by 2N(N) individual SM submodule 11 and buffer inductance 12 form, and SM submodule 11 connects buffer inductance 12 after being serially connected.Six brachium pontis are divided into first brachium pontis the 4, second brachium pontis the 5, the 3rd brachium pontis 6, four bridge legs the 7, the 5th brachium pontis 8 and the 6th brachium pontis 9；First brachium pontis 4 is connected with four bridge legs 7, and the second brachium pontis 5 is connected with the 5th brachium pontis 8, and the 3rd brachium pontis 6 is connected with the 6th brachium pontis 9；First brachium pontis 4 is in parallel with the second brachium pontis 5 and the 3rd brachium pontis 6, and four bridge legs 7 is in parallel with the 5th brachium pontis 8 and the 6th brachium pontis 9.
First brachium pontis 4 is connected with the buffer inductance 12 of four bridge legs 7 by buffer inductance 12, and the second brachium pontis 5 is connected with the buffer inductance 12 of the 5th brachium pontis 8 by buffer inductance 12, and the 3rd brachium pontis 6 is connected with the buffer inductance 12 of the 6th brachium pontis 9 by buffer inductance 12.
SM submodule 11 uses bridge connection, and solving half-bridge can not be by fault current problem during valve control technical limitations dc-side short-circuit.SM submodule 11 is by the first IGCT 13, second IGCT 14, 3rd IGCT 15, 4th IGCT 16, first fly-wheel diode 17, second fly-wheel diode 18, 3rd fly-wheel diode 19, 4th fly-wheel diode 20, first Absorption Capacitance 21, second Absorption Capacitance 22, 3rd Absorption Capacitance 23 the 4th Absorption Capacitance 24 the 5th Absorption Capacitance 25, 6th Absorption Capacitance 26, oneth GTO 27, 2nd GTO 28, first backward diode 29, second backward diode 30, first forward diode 31, second forward diode 32, drive circuit 33, control circuit 34, submodule electric capacity 35 forms；First IGCT 13 is connected with a GTO 27 and is connected with the second IGCT 14 after the first fly-wheel diode 17 and the first Absorption Capacitance 21 parallel connection；Oneth GTO 27 is in parallel with the second Absorption Capacitance 22 after connecting with the first backward diode 29 and the first forward diode 31；Second IGCT 14 is in parallel with the second fly-wheel diode 18 and the 3rd Absorption Capacitance 23；3rd IGCT 15 is connected with the 2nd GTO 28 and is connected with the 4th IGCT 16 after the 3rd fly-wheel diode 19 and the 4th Absorption Capacitance 24 parallel connection；2nd GTO 28 is in parallel with the 5th Absorption Capacitance 25 after connecting with the second backward diode 30 and the second forward diode 32；4th IGCT 16 is in parallel with the 4th fly-wheel diode 20 and the 6th Absorption Capacitance 26；First IGCT 13 and the 3rd IGCT 15 are in parallel, and the second IGCT 14 and the 4th IGCT 16 are in parallel；Control circuit 34 is connected with testing circuit 33 and SM submodule 11 respectively；Submodule electric capacity 35 is connected in parallel between the anode of the first IGCT 13 and the negative electrode of the second IGCT 14.So can realize the repertoire of each submodule of traditional modular multi-electrical level inverter, for improving power electronic equipment capacity and cost-effective there is significant effect.
The novel modular multilevel inverter that the utility model proposes, while using IGCT and GTO to replace tradition IGBT can be greatly saved cost, improves the capacity of DC-to-AC converter, has and cut the advantages such as frequency glitch ability simple, anti-is strong.
Work process is as follows:
This novel modular multilevel inverter that the utility model proposes, be applied to DC power generation system be connected to the grid 3 time, submodule electric capacity 35 is divided by the first IGCT 13 and a GTO 27, flow into the first forward diode 31, through electrical network 3, flow into the second backward diode 30, divide through the 2nd GTO 28, flow into the 4th IGCT 16；Subsequent time, submodule electric capacity 35 is divided by the 3rd IGCT 15 and the 2nd GTO 28, flows into the second forward diode 32, through electrical network 3, flow into the first backward diode 29, divide through a GTO27, flow into the second IGCT 14, complete work process.
Claims (4)
1. a novel modular multilevel inverter, it is characterized in that: include DC source (1), modular multilevel controller (2) and electrical network (3), modular multilevel controller (2) is connected with DC source (1), and electrical network (3) is connected with modular multilevel controller (2).
The most novel modular multilevel inverter, it is characterised in that: modular multilevel controller (2) is made up of six brachium pontis and reactor (10), and reactor (10) connects brachium pontis；Each brachium pontis is formed by 2N SM submodule (11) and buffer inductance (12), and SM submodule (11) connects buffer inductance (12) after being serially connected；Six brachium pontis are divided into the first brachium pontis (4), the second brachium pontis (5), the 3rd brachium pontis (6), four bridge legs (7), the 5th brachium pontis (8) and the 6th brachium pontis (9)；First brachium pontis (4) is connected with four bridge legs (7), and the second brachium pontis (5) is connected with the 5th brachium pontis (8), and the 3rd brachium pontis (6) is connected with the 6th brachium pontis (9)；First brachium pontis (4) is in parallel with the second brachium pontis (5) and the 3rd brachium pontis (6), and four bridge legs (7) is in parallel with the 5th brachium pontis (8) and the 6th brachium pontis (9).
The most novel modular multilevel inverter, it is characterized in that: the first brachium pontis (4) is connected with the buffer inductance (12) of four bridge legs (7) by buffer inductance (12), second brachium pontis (5) is connected with the buffer inductance (12) of the 5th brachium pontis (8) by buffer inductance (12), and the 3rd brachium pontis (6) is connected with the buffer inductance (12) of the 6th brachium pontis (9) by buffer inductance (12).
nullThe most novel modular multilevel inverter，It is characterized in that: SM submodule (11) is by the first IGCT (13)、Second IGCT (14)、3rd IGCT (15)、4th IGCT (16)、First fly-wheel diode (17)、Second fly-wheel diode (18)、3rd fly-wheel diode (19)、4th fly-wheel diode (20)、First Absorption Capacitance (21)、Second Absorption Capacitance (22)、3rd Absorption Capacitance (23) the 4th Absorption Capacitance (24) the 5th Absorption Capacitance (25)、6th Absorption Capacitance (26)、Oneth GTO(27)、2nd GTO(28)、First backward diode (29)、Second backward diode (30)、First forward diode (31)、Second forward diode (32)、Drive circuit (33)、Control circuit (34)、Submodule electric capacity (35) forms；First IGCT (13) with after the first fly-wheel diode (17) and the first Absorption Capacitance (21) parallel connection with a GTO(27) connect and connect with the second IGCT (14)；Oneth GTO(27) connect with the first backward diode (29) and the first forward diode (31) after in parallel with the second Absorption Capacitance (22)；Second IGCT (14) is in parallel with the second fly-wheel diode (18) and the 3rd Absorption Capacitance (23)；3rd IGCT (15) with after the 3rd fly-wheel diode (19) and the 4th Absorption Capacitance (24) parallel connection with the 2nd GTO(28) connect and connect with the 4th IGCT (16)；2nd GTO(28) connect with the second backward diode (30) and the second forward diode (32) after in parallel with the 5th Absorption Capacitance (25)；4th IGCT (16) is in parallel with the 4th fly-wheel diode (20) and the 6th Absorption Capacitance (26)；First IGCT (13) and the 3rd IGCT (15) are in parallel, and the second IGCT (14) and the 4th IGCT (16) are in parallel；Control circuit (34) is connected with testing circuit (33) and SM submodule (11) respectively；Submodule electric capacity (35) is connected in parallel between the anode of the first IGCT (13) and the negative electrode of the second IGCT (14).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620027000.5U CN205544321U (en) | 2016-01-13 | 2016-01-13 | Novel many inverter of modularization |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620027000.5U CN205544321U (en) | 2016-01-13 | 2016-01-13 | Novel many inverter of modularization |
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| CN205544321U true CN205544321U (en) | 2016-08-31 |
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| CN201620027000.5U Withdrawn - After Issue CN205544321U (en) | 2016-01-13 | 2016-01-13 | Novel many inverter of modularization |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105553311A (en) * | 2016-01-13 | 2016-05-04 | 沈阳工业大学 | Novel modular multilevel inverter |
| CN110995039A (en) * | 2019-11-25 | 2020-04-10 | 上海交通大学 | Low-loss modular multilevel converter and parameter design method thereof |
-
2016
- 2016-01-13 CN CN201620027000.5U patent/CN205544321U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105553311A (en) * | 2016-01-13 | 2016-05-04 | 沈阳工业大学 | Novel modular multilevel inverter |
| CN105553311B (en) * | 2016-01-13 | 2018-04-03 | 沈阳工业大学 | New modular multilevel inverter |
| CN110995039A (en) * | 2019-11-25 | 2020-04-10 | 上海交通大学 | Low-loss modular multilevel converter and parameter design method thereof |
| CN110995039B (en) * | 2019-11-25 | 2020-11-24 | 上海交通大学 | Low-loss modular multilevel converter and parameter design method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20160831 Effective date of abandoning: 20180403 |