CN205610500U - Novel two level contravariants of three -phase device - Google Patents
Novel two level contravariants of three -phase device Download PDFInfo
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- CN205610500U CN205610500U CN201620026999.1U CN201620026999U CN205610500U CN 205610500 U CN205610500 U CN 205610500U CN 201620026999 U CN201620026999 U CN 201620026999U CN 205610500 U CN205610500 U CN 205610500U
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Abstract
The utility model relates to a two level inverters of three -phase, include that reactor, surge protection circuit, the three -phase be connected with the electric wire netting does not control rectifier, current -limiting circuit, filter capacitance, busbar voltage detection circuitry, three -phase inverter circuit, three phase current detection circuitry, drive circuit, control circuit, RL load and connect gradually the constitution. This system replaces IGBT with the thyristor, can practice thrift the cost under the prerequisite that satisfies two inverter over -all propertiess of traditional three -phase, function, and simultaneously, the utility model provides a novel topological structure easily is used in three inverter, five inverter, unit many inverter that establish ties, among many level converter of modularization and the corresponding controlled rectifier, and when improving the power electronic equipment capacity, the cost is reduced.
Description
Technical field
This utility model relates to field of power electronics, needs in pressure regulation, frequency modulation, speed governing, harmonics restraint and reactive-load compensation even load in order to electrical engineering field is all kinds of particularly to a kind of novel three-phase two level inverter.
Background technology
In recent years, AC variable-frequency speed regulation system is with the speed adjusting performance of its brilliance, significant power savings and the broad applicability in World Economics every field, while progressively replacing Direct Current Governor System, becomes the most promising mode of speed regulation.It is widely used in fields such as industry, transportation, power system, power electronic equipment power supply and household electrical appliance.
The development of power electronic devices, the development to power electronic equipment plays conclusive effect.The electron tube, the transistor that within 1904, occur are that electric electronic current change technology is laid a good foundation.The IGCT that the seventies occurs makes rectification, inversion transformation technique progress into the power electronics frequency conversion epoch, and progressively instead of conventional rotary convertor group.Automatic shutoff high-power bipolar transistor (GTR) its performance that the eighties occurs is considerably beyond half control type device IGCT so that it is capture rapidly leading position in frequency conversion field.But, either GTR or GTO is current mode device, has driving electric current big, the shortcoming that switching frequency is low.The MOSFET (MOSFET) that the initial stage eighties occurs belongs to voltage-type device, drives power little, and safety operation area is big, and switching frequency is high, but this device proof voltage, current capacity are low, limit its range of application.In the later stage eighties, it is a dark horse with the insulated gate bipolar transistor (IGBT) the compound device as representative.IGBT is the compound of MOSFET and BJT, the driving advantage that power is little, switching speed is fast and the advantage that BJT on-state voltage drop is little, current capacity is big of MOSFET is integrated in one, and performance is the most superior.Make the leading device of modern power electronics technology.Enter the nineties, in order to make the compact conformation of power electronic equipment, volume reduce, occur in that detecting, drive, power IC device (IPM) that the function such as protection integrates.The most again on the basis of IPM, the function such as logic, control is integrated, constitute power integrated circuit (PIC).At present, manufacture technique of power electronic device just develops towards high-power, high switching frequency, the direction of driving power highly integrated, low.
The continuous innovation of power electronic devices so that it is application technology is developed rapidly, on the basis of two-level inversion device, occurs in that substantial amounts of novel topological structure.Such as neutral-point-clamped three-level pwm inverter, five level PWM inverters, cells cascaded multilevel PWM inverter, transformer coupled output inverter, Modular multilevel converter etc..
The appearance of New Type Power Devices and the development of novel topological structure, improve performance and the capacity of power electronic equipment to a certain extent.But the use of a large amount of power electronic elements, will certainly reduce the security and stability of power electronic equipment, improves the cost of power electronic equipment.
It would therefore be highly desirable to develop power electronic equipment cost-effective on the premise of meeting the over-all properties of conventional three-phase two-level inverter, function.
Summary of the invention
Goal of the invention
This utility model provides a kind of power electronic equipment, for realizing the transformation of three phase mains, frequency conversion, this function is used in three-phase two level inverter, it is therefore intended that the regulation of regulating load voltage, frequency and rotating speed etc., and system cost can be greatly reduced.
Technical scheme
This utility model is achieved through the following technical solutions:
A kind of Three phase two level inverter, it is characterised in that: include reactor, surging protection circuit, three-phase uncontrollable rectifier device, current-limiting circuit, filter capacitor, busbar voltage testing circuit, three-phase inverting circuit, three-phase current detection circuit, drive circuit, control circuit and the RL load being connected with electrical network；Reactor connects surging protection circuit, surging protection circuit connects three-phase uncontrollable rectifier device, three-phase uncontrollable rectifier device connects filter capacitor by current-limiting circuit, filter capacitor connects busbar voltage testing circuit, busbar voltage testing circuit connects three-phase inverting circuit, three-phase inverting circuit connects three-phase current detection circuit and drive circuit, and drive circuit connects control circuit, and three-phase current detection circuit connects RL load.
Three-phase inverting circuit is by the first IGCT, second IGCT, 3rd IGCT, 4th IGCT, 5th IGCT, 6th IGCT, first fly-wheel diode, second fly-wheel diode, 3rd fly-wheel diode, 4th fly-wheel diode, 5th fly-wheel diode, 6th fly-wheel diode, first Absorption Capacitance, second Absorption Capacitance, oneth IGBT, 2nd IGBT, 3rd IGBT, first forward diode, second forward diode, 3rd forward diode, first backward diode, second backward diode, three-phase nine switching bridge that 3rd backward diode is constituted connects composition；Wherein, connect with an IGBT after first IGCT and the first fly-wheel diode and the first Absorption Capacitance parallel connection, oneth IGBT and the first backward diode and the first forward diode are in parallel with the 4th Thyristors in series, the 4th IGCT and the 4th fly-wheel diode and Absorption Capacitance after connecting and being in parallel with the second Absorption Capacitance；Connect with the 2nd IGBT after second IGCT and the second fly-wheel diode and Absorption Capacitance parallel connection, 2nd IGBT and the second backward diode and the second forward diode are in parallel with the 5th Thyristors in series, the 5th IGCT and the 5th fly-wheel diode and Absorption Capacitance after connecting and being in parallel with Absorption Capacitance；Connect with the 3rd IGBT after 3rd IGCT and the 3rd fly-wheel diode and Absorption Capacitance parallel connection, 3rd IGBT and the 3rd backward diode and the 3rd forward diode are in parallel with the 6th Thyristors in series, the 6th IGCT and the 6th fly-wheel diode and Absorption Capacitance after connecting and being in parallel with Absorption Capacitance；First IGCT and the second IGCT and the 3rd IGCT are in parallel, the 4th IGCT and the 5th IGCT and the parallel connection of the 6th IGCT.
Connecting RL by the first forward diode after oneth IGBT frequency dividing to load, RL load connects the second backward diode, and the second backward diode connects the 2nd IGBT, the 2nd IGBT and connects the 5th IGCT, and the 5th IGCT is connected back to three-phase uncontrollable rectifier device anode；Second IGCT connects the 2nd IGBT, 2nd IGBT connects the second forward diode, second forward diode connects RL load, RL load connects the 3rd backward diode, 3rd backward diode connects the 3rd IGBT, 3rd IGBT connects the 6th IGCT, and the 6th IGCT is connected back to three-phase uncontrollable rectifier device anode；3rd IGCT connects the 3rd IGBT, 3rd IGBT connects the 3rd forward diode, 3rd forward diode connects RL load, RL load connects the first backward diode, first backward diode connects an IGBT, oneth IGBT connects the 4th IGCT, and the 4th IGCT is connected back to three-phase uncontrollable rectifier device anode.
Advantage and effect
This utility model has the advantage that and beneficial effect:
A kind of novel three-phase two level inverter that the utility model proposes, replaces IGBT with IGCT, it is possible on the premise of meeting conventional three-phase two-level inverter over-all properties, function, cost-effective；Meanwhile, the novel topological structure that the utility model proposes, it is easy to be used in three-level inverter, five-electrical level inverter, cells cascaded multilevel inverter, in Modular multilevel converter, while improving power electronic equipment capacity, reduces cost.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Description of reference numerals:
null1、Electrical network 2、Reactor 3、Surging protection circuit 4、Three-phase uncontrollable rectifier device 5、Current-limiting circuit 6、Filter capacitor 7、Busbar voltage testing circuit 8、Three-phase inverting circuit 9、Three-phase current detection circuit 10、Drive circuit 11、Control circuit 12、First IGCT 13、Second IGCT 14、3rd IGCT 15、4th IGCT 16、5th IGCT 17、6th IGCT 18、First fly-wheel diode 19、Second fly-wheel diode 20、3rd fly-wheel diode 21、4th fly-wheel diode 22、5th fly-wheel diode 23、6th fly-wheel diode 24、First Absorption Capacitance 25、Second Absorption Capacitance 26、Oneth IGBT 27、2nd IGBT 28、3rd IGBT 29、First forward diode 30、Second forward diode 31、3rd forward diode 32、First backward diode 33、Second backward diode 34、3rd backward diode 35、RL loads.
Detailed description of the invention
Below in conjunction with the accompanying drawings this utility model is described further:
A kind of novel three-phase two level inverter that the utility model proposes, replaces IGBT with IGCT, it is possible on the premise of meeting the over-all properties of conventional three-phase two-level inverter, function, cost-effective；Simultaneously, the novel topological structure that the utility model proposes, it is easy to be used in three-level inverter, five-electrical level inverter, cells cascaded multilevel inverter, Modular multilevel converter and corresponding controlled rectifier, cost can be reduced while improving power electronic equipment capacity.
Fig. 1 is the structural representation of this utility model this Three phase two level inverter, as it can be seen, this device includes that the reactor 2 being connected with electrical network 1, surging protection circuit 3, three-phase uncontrollable rectifier device 4, current-limiting circuit 5, filter capacitor 6, busbar voltage testing circuit 7, three-phase inverting circuit 8, three-phase current detection circuit 9, drive circuit 10, control circuit 11 and RL load 35.
Reactor 2 connects surging protection circuit 3, surging protection circuit 3 connects three-phase uncontrollable rectifier device 4, three-phase uncontrollable rectifier device 4 connects filter capacitor 6 by current-limiting circuit 5, filter capacitor 6 connects busbar voltage testing circuit 7, busbar voltage testing circuit 7 connects three-phase inverting circuit 8, three-phase inverting circuit 8 connects three-phase current detection circuit 9 and drive circuit 10, and drive circuit 10 connects control circuit 11, and three-phase current detection circuit 9 connects RL load 35.
8 use the oneth IGBT the 26, the 2nd IGBT the 27, the 3rd IGBT the 28, first IGCT the 12, second IGCT the 13, the 3rd IGCT the 14, the 4th IGCT the 15, the 5th IGCT the 16, the 6th IGCT the 17, first forward diode the 29, second forward diode the 30, the 3rd forward diode the 31, first backward diode the 32, second backward diode the 33, the 3rd backward diodes 34 of the three-phase inverting circuit of this inverter can realize tradition two-level inverter repertoire, cost-effective significantly.
Three-phase inverting circuit 8 is by the first IGCT 12, second IGCT 13, 3rd IGCT 14, 4th IGCT 15, 5th IGCT 16, 6th IGCT 17, first fly-wheel diode 18, second fly-wheel diode 19, 3rd fly-wheel diode 20, 4th fly-wheel diode 21, 5th fly-wheel diode 22, 6th fly-wheel diode 23, first Absorption Capacitance 24, second Absorption Capacitance 25, oneth IGBT 26, 2nd IGBT 27, 3rd IGBT 28, first forward diode 29, second forward diode 30, 3rd forward diode 31, first backward diode 32, second backward diode 33, three-phase nine switching bridge that 3rd backward diode 34 is constituted connects composition；Wherein, first IGCT 12 is connected with an IGBT 26 after the first fly-wheel diode 18 and the first Absorption Capacitance 24 parallel connection, oneth IGBT 26 and the first backward diode 32 and the first forward diode 29 is connected and connects with the 4th IGCT 15 after the second Absorption Capacitance 25 parallel connection, the 4th IGCT 15 is in parallel with the 4th fly-wheel diode 21 and Absorption Capacitance；Second IGCT 13 is connected with the 2nd IGBT 27 after the second fly-wheel diode 19 and Absorption Capacitance parallel connection, 2nd IGBT 27 connects with the second backward diode 33 and the second forward diode 30 and connects with the 5th IGCT 16 with after Absorption Capacitance parallel connection, and the 5th IGCT 16 is in parallel with the 5th fly-wheel diode 22 and Absorption Capacitance；3rd IGCT 14 is connected with the 3rd IGBT 28 with after the 3rd fly-wheel diode 20 and Absorption Capacitance parallel connection, 3rd IGBT 28 and the 3rd backward diode 34 and the 3rd forward diode 31 is connected and connects with the 6th IGCT 17 with after Absorption Capacitance parallel connection, the 6th IGCT 17 is in parallel with the 6th fly-wheel diode 23 and Absorption Capacitance；First IGCT 12 is in parallel with the second IGCT 13 and the 3rd IGCT 14, and the 4th IGCT 15 is in parallel with the 5th IGCT 16 and the 6th IGCT 17.
RL load 35 is connected by the first forward diode 29 after oneth IGBT 26 frequency dividing, RL load 35 connection the second backward diode 33, second backward diode 33 connects the 2nd IGBT 27, the 2nd IGBT 27 and connects the 5th IGCT 16, and the 5th IGCT 16 is connected back to three-phase uncontrollable rectifier device 4 anode；Second IGCT 13 connects the 2nd IGBT 27,2nd IGBT 27 connects the second forward diode 30, second forward diode 30 connects RL load 35, RL load 35 connection the 3rd backward diode 34,3rd backward diode 34 connects the 3rd IGBT 28,3rd IGBT 28 connects the 6th IGCT 17, and the 6th IGCT 17 is connected back to three-phase uncontrollable rectifier device 4 anode；3rd IGCT 14 connects the 3rd IGBT 28,3rd IGBT 28 connects the 3rd forward diode 31,3rd forward diode 31 connects RL load 35, RL load 35 connection the first backward diode 32, first backward diode 32 connects an IGBT 26, oneth IGBT 26 connects the 4th IGCT 15, and the 4th IGCT 15 is connected back to three-phase uncontrollable rectifier device 4 anode.
Three phase two level inverter replaces the IGBT in conventional three-phase two level with six IGCTs, and while can meeting conventional three-phase two-level inverter over-all properties, cost reduces notable.
Utility model works process is as follows:
This novel three-phase two level inverter of this utility model is applied to RL when loading in 35 systems, DC current is through the first IGCT 12, flow into an IGBT 26 to divide, through the first forward diode 29, load 35 through RL, through the second backward diode 33, through the 2nd IGBT 27, through the 5th IGCT 16, return to three-phase uncontrollable rectifier device 4 anode, complete the first phase work process；Simultaneously, second IGCT 13 connects the 2nd IGBT 27,2nd IGBT 27 connects the second forward diode 30, second forward diode 30 connects RL load 35, RL load 35 connection the 3rd backward diode 34,3rd backward diode 34 connects the 3rd IGBT 28, and the 3rd IGBT 28 connects the 6th IGCT 17 and returns to three-phase uncontrollable rectifier device
4 anodes；Further, the 3rd IGCT 14 connects the 3rd IGBT 28, and the 3rd IGBT 28 connects the 3rd forward diode 31, the 3rd forward diode
31 connect RL load 35, RL load 35 connection the first backward diode
32, the first backward diode 32 connects an IGBT 26, an IGBT 26 and connects the 4th IGCT 15 and return to three-phase uncontrollable rectifier device 4 anode.
Claims (3)
1. Three phase two level inverter, it is characterised in that: include reactor (2), surging protection circuit (3), three-phase uncontrollable rectifier device (4), current-limiting circuit (5), filter capacitor (6), busbar voltage testing circuit (7), three-phase inverting circuit (8), three-phase current detection circuit (9), drive circuit (10), control circuit (11) and RL load (35) being connected with electrical network (1)；Reactor (2) connects surging protection circuit (3), surging protection circuit (3) connects three-phase uncontrollable rectifier device (4), three-phase uncontrollable rectifier device (4) connects filter capacitor (6) by current-limiting circuit (5), filter capacitor (6) connects busbar voltage testing circuit (7), busbar voltage testing circuit (7) connects three-phase inverting circuit (8), three-phase inverting circuit (8) connects three-phase current detection circuit (9) and drive circuit (10), drive circuit (10) connects control circuit (11), and three-phase current detection circuit (9) connects RL load (35).
nullThree phase two level inverter the most according to claim 1，It is characterized in that: three-phase inverting circuit (8) is by the first IGCT (12)、Second IGCT (13)、3rd IGCT (14)、4th IGCT (15)、5th IGCT (16)、6th IGCT (17)、First fly-wheel diode (18)、Second fly-wheel diode (19)、3rd fly-wheel diode (20)、4th fly-wheel diode (21)、5th fly-wheel diode (22)、6th fly-wheel diode (23)、First Absorption Capacitance (24)、Second Absorption Capacitance (25)、Oneth IGBT(26)、2nd IGBT(27)、3rd IGBT(28)、First forward diode (29)、Second forward diode (30)、3rd forward diode (31)、First backward diode (32)、Second backward diode (33)、Three-phase nine switching bridge that 3rd backward diode (34) is constituted connects composition；Wherein, first IGCT (12) with after the first fly-wheel diode (18) and the first Absorption Capacitance (24) parallel connection with an IGBT(26) connect, oneth IGBT(26) to connect with the first backward diode (32) and the first forward diode (29) and connect with the 4th IGCT (15) with after the second Absorption Capacitance (25) parallel connection, the 4th IGCT (15) is in parallel with the 4th fly-wheel diode (21) and Absorption Capacitance；Second IGCT (13) with after the second fly-wheel diode (19) and Absorption Capacitance parallel connection with the 2nd IGBT(27) connect, 2nd IGBT(27) to connect with the second backward diode (33) and the second forward diode (30) and connect with the 5th IGCT (16) with after Absorption Capacitance parallel connection, the 5th IGCT (16) is in parallel with the 5th fly-wheel diode (22) and Absorption Capacitance；3rd IGCT (14) with after the 3rd fly-wheel diode (20) and Absorption Capacitance parallel connection with the 3rd IGBT(28) connect, 3rd IGBT(28) to connect with the 3rd backward diode (34) and the 3rd forward diode (31) and connect with the 6th IGCT (17) with after Absorption Capacitance parallel connection, the 6th IGCT (17) is in parallel with the 6th fly-wheel diode (23) and Absorption Capacitance；First IGCT (12) is in parallel with the second IGCT (13) and the 3rd IGCT (14), and the 4th IGCT (15) is in parallel with the 5th IGCT (16) and the 6th IGCT (17).
Three phase two level inverter the most according to claim 2, it is characterized in that: an IGBT(26) frequency dividing after by the first forward diode (29) connect RL load (35), RL load (35) connects the second backward diode (33), second backward diode (33) connects the 2nd IGBT(27), 2nd IGBT(27) connect the 5th IGCT (16), the 5th IGCT (16) is connected back to three-phase uncontrollable rectifier device (4) anode；Second IGCT (13) connects the 2nd IGBT(27), 2nd IGBT(27) connect the second forward diode (30), second forward diode (30) connects RL load (35), RL load (35) connects the 3rd backward diode (34), 3rd backward diode (34) connects the 3rd IGBT(28), 3rd IGBT(28) connect the 6th IGCT (17), the 6th IGCT (17) is connected back to three-phase uncontrollable rectifier device (4) anode；3rd IGCT (14) connects the 3rd IGBT(28), 3rd IGBT(28) connect the 3rd forward diode (31), 3rd forward diode (31) connects RL load (35), RL load (35) connects the first backward diode (32), first backward diode (32) connects an IGBT(26), oneth IGBT(26) connect the 4th IGCT (15), the 4th IGCT (15) is connected back to three-phase uncontrollable rectifier device (4) anode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620026999.1U CN205610500U (en) | 2016-01-13 | 2016-01-13 | Novel two level contravariants of three -phase device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620026999.1U CN205610500U (en) | 2016-01-13 | 2016-01-13 | Novel two level contravariants of three -phase device |
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| CN205610500U true CN205610500U (en) | 2016-09-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201620026999.1U Withdrawn - After Issue CN205610500U (en) | 2016-01-13 | 2016-01-13 | Novel two level contravariants of three -phase device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105450066A (en) * | 2016-01-13 | 2016-03-30 | 沈阳工业大学 | Novel three-phase two-level inversion apparatus |
| CN107370401A (en) * | 2017-08-07 | 2017-11-21 | 深圳市易电新能源科技有限公司 | A kind of level topological circuit of three-phase five |
-
2016
- 2016-01-13 CN CN201620026999.1U patent/CN205610500U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105450066A (en) * | 2016-01-13 | 2016-03-30 | 沈阳工业大学 | Novel three-phase two-level inversion apparatus |
| CN107370401A (en) * | 2017-08-07 | 2017-11-21 | 深圳市易电新能源科技有限公司 | A kind of level topological circuit of three-phase five |
| CN107370401B (en) * | 2017-08-07 | 2023-11-17 | 江苏华鹏智能仪表科技股份有限公司 | Three-phase five-level topological circuit |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20160928 Effective date of abandoning: 20180119 |
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| AV01 | Patent right actively abandoned |