CN105450066B - The level inverter of Three phase two - Google Patents
The level inverter of Three phase two Download PDFInfo
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- CN105450066B CN105450066B CN201610018885.7A CN201610018885A CN105450066B CN 105450066 B CN105450066 B CN 105450066B CN 201610018885 A CN201610018885 A CN 201610018885A CN 105450066 B CN105450066 B CN 105450066B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/505—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
- H02M7/515—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The present invention relates to a kind of new level inverter of three-phase two, including reactor, surging protection circuit, three-phase uncontrollable rectifier device, current-limiting circuit, filter capacitor, busbar voltage detection circuit, three-phase inverting circuit, three-phase current detection circuit, drive circuit, control circuit, the RL being connected with power network are loaded and are sequentially connected composition.The system replaces IGBT with IGCT, can be cost-effective on the premise of conventional three-phase two-level inverter over-all properties, function is met；Simultaneously, novel topological structure proposed by the present invention, is readily used in three-level inverter, five-electrical level inverter, cells cascaded multilevel inverter, in Modular multilevel converter and corresponding controlled rectifier, while power electronic equipment capacity is improved, cost is reduced.
Description
Technical field
The present invention relates to field of power electronics, more particularly to a kind of new level inverter of three-phase two is to electrician
Journey field is all kinds of to be needed in pressure regulation, frequency modulation, speed governing, harmonics restraint and reactive-load compensation even load.
Background technology
In recent years, AC variable-frequency speed regulation system passes through with its remarkable speed adjusting performance, significant power savings and in the world
The broad applicability for every field of helping, while Direct Current Governor System is progressively substituted, turn into most promising mode of speed regulation.
Industry, communications and transportation, power system, power electronic equipment are widely used with fields such as power supply and household electrical appliance.
The development of power electronic devices, the development to power electronic equipment play conclusive effect.Occur within 1904
Electron tube, transistor are laid a good foundation for electric electronic current change technology.The seventies occur IGCT make rectification, inversion transformation technique by
The power electronics frequency conversion epoch are gradually entered, and progressively instead of conventional rotary convertor group.The automatic shutoff that the eighties occurs is big
Power bipolar transistor（GTR）Its performance makes it capture master rapidly in frequency conversion field considerably beyond half control type device IGCT
Lead status.But either GTR or GTO are current mode devices, there is the shortcomings that driving current is big, and switching frequency is low.80
The MOSFET that initial stage in age occurs（MOSFET）Belong to voltage-type device, driving power is small, and safety operation area is big, switch
Frequency is high, but this device proof voltage, current capacity are low, limit its application.In the later stage eighties, with insulated gate
Bipolar transistor（IGBT）It is a dark horse for the compound device of representative.IGBT is the compound of MOSFET and BJT, by MOSFET
Driving power is small, the advantages of the advantages of switching speed is fast and BJT on-state voltage drops are small, current capacity is big is integrated in one, performance is non-
Chang Youyue.Make the leading device of modern power electronics technology.Into the nineties, in order that the structure of power electronic equipment
Compact, volume reduces, and the power IC device for integrating the functions such as detection, driving, protection occurs（IPM）.Later
Again on the basis of IPM, the functions such as logic, control are integrated, form power integrated circuit（PIC）.At present, electric power electricity
Sub- device fabrication techniques just develop towards the direction of high-power, high switching frequency, highly integrated, low driving power.
The continuous innovation of power electronic devices, is developed rapidly its application technology, in the base of two-level inversion device
On plinth, there is substantial amounts of novel topological structure.It is single such as neutral-point-clamped three-level pwm inverter, five level PWM inverters
The multiple-level serially connected PWM inverter of member, transformer coupled output inverter, Modular multilevel converter etc..
The appearance of New Type Power Devices and the development of novel topological structure, improve power electronic equipment to a certain extent
Performance and capacity.But the use of a large amount of power electronic elements, the security and stability of power electronic equipment will certainly be reduced, is improved
The cost of power electronic equipment.
Saved it would therefore be highly desirable to develop on the premise of the over-all properties of conventional three-phase two-level inverter, function is met
The power electronic equipment of cost.
The content of the invention
Goal of the invention
The present invention provides a kind of power electronic equipment, and for realizing transformation, the frequency conversion of three phase mains, this function is used for into three
In the level inverter of phase two, it is therefore intended that regulation load voltage, frequency regulation and rotating speed etc., system cost can be greatly reduced.
Technical scheme
The present invention is achieved through the following technical solutions：
A kind of level inverter of Three phase two, it is characterised in that：Including reactor, the carrying out surge protection being connected with power network
Circuit, three-phase uncontrollable rectifier device, current-limiting circuit, filter capacitor, busbar voltage detection circuit, three-phase inverting circuit, three-phase current
Detect circuit, drive circuit, control circuit and RL loads；Reactor connects surging protection circuit, surging protection circuit connection three
Phase uncontrollable rectifier device, three-phase uncontrollable rectifier device connect filter capacitor, filter capacitor connection busbar voltage detection by current-limiting circuit
Circuit, busbar voltage detection circuit connection three-phase inverting circuit, three-phase inverting circuit connection three-phase current detection circuit and driving
Circuit, drive circuit connection control circuit, three-phase current detection circuit connection RL loads.
Three-phase inverting circuit is by the first IGCT, the second IGCT, the 3rd IGCT, the 4th IGCT, the 5th brilliant lock
Pipe, the 6th IGCT, the first fly-wheel diode, the second fly-wheel diode, the 3rd fly-wheel diode, the 4th fly-wheel diode,
Five fly-wheel diodes, the 6th fly-wheel diode, the first Absorption Capacitance, the second Absorption Capacitance, the first IGBT, the 2nd IGBT, the 3rd
IGBT, the first forward diode, the second forward diode, the 3rd forward diode, the first backward dioded, the second reverse two pole
The switching bridge of the three-phase nine connection composition that pipe, the 3rd backward dioded are formed；Wherein, the first IGCT and the first fly-wheel diode
And first connect with the first IGBT after Absorption Capacitance parallel connection, the first IGBT and the first backward dioded and the first forward diode string
Join and it is in parallel with the second Absorption Capacitance after with the 4th Thyristors in series, the 4th IGCT and the 4th fly-wheel diode and Absorption Capacitance
It is in parallel；Second IGCT is connected with after the second fly-wheel diode and Absorption Capacitance parallel connection with the 2nd IGBT, the 2nd IGBT and second
Backward dioded and the second forward diode series connection and it is in parallel with Absorption Capacitance after with the 5th Thyristors in series, the 5th IGCT with
5th fly-wheel diode and Absorption Capacitance are in parallel；With the 3rd after 3rd IGCT is in parallel with the 3rd fly-wheel diode and Absorption Capacitance
IGBT connects, the 3rd IGBT connected with the 3rd backward dioded and the 3rd forward diode and it is in parallel with Absorption Capacitance after with the 6th
Thyristors in series, the 6th IGCT are in parallel with the 6th fly-wheel diode and Absorption Capacitance；First IGCT and the second IGCT and
3rd IGCT is in parallel, and the 4th IGCT is in parallel with the 5th IGCT and the 6th IGCT.
RL loads are connected by the first forward diode after first IGBT frequency dividings, RL loads connect the second backward dioded,
Second backward dioded connect the 2nd IGBT, the IGCT of the 2nd IGBT connections the 5th, the 5th IGCT be connected back to three-phase do not control it is whole
Flow device anode；Second IGCT connects the 2nd IGBT, the 2nd IGBT the second forward diodes of connection, the connection of the second forward diode
RL is loaded, and RL load the 3rd backward diodeds of connection, the 3rd backward dioded connects the 3rd IGBT, and the 3rd IGBT connections the 6th are brilliant
Brake tube, the 6th IGCT are connected back to three-phase uncontrollable rectifier device anode；3rd IGCT connects the 3rd IGBT, the 3rd IGBT connections the
Three forward diodes, the connection RL loads of the 3rd forward diode, RL load the first backward diodeds of connection, the first backward dioded
The first IGBT, the IGCT of the first IGBT connections the 4th are connected, the 4th IGCT is connected back to three-phase uncontrollable rectifier device anode.
Advantage and effect
The invention has the advantages that and beneficial effect：
A kind of new level inverter of three-phase two proposed by the present invention, replaces IGBT with IGCT, can meet
It is cost-effective on the premise of conventional three-phase two-level inverter over-all properties, function；Meanwhile New Topological proposed by the present invention
Structure, it is readily used in three-level inverter, five-electrical level inverter, cells cascaded multilevel inverter, modular multilevel conversion
In device, while power electronic equipment capacity is improved, cost is reduced.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention.
Description of reference numerals：
1st, power network 2, reactor 3, surging protection circuit 4, three-phase uncontrollable rectifier device 5, current-limiting circuit 6, filter capacitor
7th, busbar voltage detection circuit 8, three-phase inverting circuit 9, three-phase current detection circuit 10, drive circuit 11, control circuit
12nd, the first IGCT 13, the second IGCT 14, the 3rd IGCT 15, the 4th IGCT 16, the 5th IGCT the 17, the 6th
IGCT 18, the first fly-wheel diode 19, the second fly-wheel diode 20, the 3rd fly-wheel diode 21, the pole of the 4th afterflow two
Pipe 22, the 5th fly-wheel diode 23, the 6th fly-wheel diode 24, the first Absorption Capacitance 25, the second Absorption Capacitance 26,
One IGBT 27, the 2nd IGBT 28, the 3rd IGBT 29, the first forward diode 30, the second forward diode the 31, the 3rd are just
To diode 32, the first backward dioded 33, the second backward dioded 34, the 3rd backward dioded 35, RL loads.
Embodiment
The present invention is described further below in conjunction with the accompanying drawings：
A kind of new level inverter of three-phase two proposed by the present invention, replaces IGBT with IGCT, can meet
It is cost-effective on the premise of the over-all properties of conventional three-phase two-level inverter, function；Meanwhile proposed by the present invention new open up
Structure is flutterred, is readily used in three-level inverter, five-electrical level inverter, cells cascaded multilevel inverter, modular multilevel becomes
In parallel operation and corresponding controlled rectifier, cost can be reduced while power electronic equipment capacity is improved.
Fig. 1 is the structural representation of this level inverter of Three phase two of the present invention, as illustrated, the device includes
Reactor 2, surging protection circuit 3, three-phase uncontrollable rectifier device 4, current-limiting circuit 5, filter capacitor 6, the bus electricity being connected with power network 1
Pressure detection circuit 7, three-phase inverting circuit 8, three-phase current detection circuit 9, drive circuit 10, control circuit 11 and RL loads 35.
Reactor 2 connects surging protection circuit 3, and surging protection circuit 3 connects three-phase uncontrollable rectifier device 4, and three-phase is not controlled whole
Flow device 4 and filter capacitor 6 is connected by current-limiting circuit 5, filter capacitor 6 connects busbar voltage detection circuit 7, busbar voltage detection electricity
Road 7 connects three-phase inverting circuit 8, and three-phase inverting circuit 8 connects three-phase current detection circuit 9 and drive circuit 10, drive circuit
10 connection control circuits 11, three-phase current detection circuit 9 connect RL loads 35.
The IGBT 26 of 8 use of three-phase inverting circuit the first of the inverter, the 2nd IGBT 27, the 3rd IGBT 28,
One IGCT 12, the second IGCT 13, the 3rd IGCT 14, the 4th IGCT 15, the 5th IGCT 16, the 6th IGCT 17,
First forward diode 29, the second forward diode 30, the 3rd forward diode 31, the first backward dioded 32, second are reverse
Diode 33, the 3rd backward dioded 34 are the repertoire that traditional two-level inverter can be achieved, cost-effective notable.
Three-phase inverting circuit 8 be by the first IGCT 12, the second IGCT 13, the 3rd IGCT 14, the 4th IGCT 15,
5th IGCT 16, the 6th IGCT 17, the first fly-wheel diode 18, the second fly-wheel diode 19, the 3rd fly-wheel diode 20,
4th fly-wheel diode 21, the 5th fly-wheel diode 22, the 6th fly-wheel diode 23, the first Absorption Capacitance 24, second absorb electricity
Hold the 25, the first IGBT 26, the 2nd IGBT 27, the 3rd IGBT 28, the first forward diode 29, the second forward diode 30, the
The three-phase nine that three forward diodes 31, the first backward dioded 32, the second backward dioded 33, the 3rd backward dioded 34 are formed
Switching bridge connection composition；Wherein, after the first IGCT 12 and the first fly-wheel diode 18 and the first Absorption Capacitance 24 are in parallel with
First IGBT 26 connects, and the first IGBT 26 connects with the first backward dioded 32 and the first forward diode 29 and inhaled with second
Connected after receiving the parallel connection of electric capacity 25 with the 4th IGCT 15, the 4th IGCT 15 and the 4th fly-wheel diode 21 and Absorption Capacitance are simultaneously
Connection；Second IGCT 13 is connected with after the second fly-wheel diode 19 and Absorption Capacitance parallel connection with the 2nd IGBT 27, the 2nd IGBT
27 connect with the second backward dioded 33 and the second forward diode 30 and are gone here and there after in parallel with Absorption Capacitance with the 5th IGCT 16
Connection, the 5th IGCT 16 are in parallel with the 5th fly-wheel diode 22 and Absorption Capacitance；3rd IGCT 14 and the 3rd fly-wheel diode
20 and Absorption Capacitance parallel connection after connected with the 3rd IGBT 28, the 3rd IGBT 28 and the 3rd backward dioded 34 and the 3rd forward direction two
Pole pipe 31 is connected and connected with after Absorption Capacitance parallel connection with the 6th IGCT 17, the 6th IGCT 17 and the 6th fly-wheel diode 23
And Absorption Capacitance is in parallel；First IGCT 12 is in parallel with the second IGCT 13 and the 3rd IGCT 14, the 4th IGCT 15 and
Five IGCTs 16 and the 6th IGCT 17 are in parallel.
It is anti-by connection RL 35, RL of load, 35 connections second of load of the first forward diode 29 after first IGBT 26 frequency dividings
To diode 33, the second backward dioded 33 connects the 2nd IGBT 27, and the 2nd the 5th IGCTs 16 of connection of IGBT 27, the 5th is brilliant
Brake tube 16 is connected back to the anode of three-phase uncontrollable rectifier device 4；Second IGCT 13 connects the 2nd IGBT 27, the 2nd connections of IGBT 27 the
Two forward diodes 30, the 3rd backward diodeds 34 of connection of the second forward diode 30 connection RL 35, RL of load loads 35, the 3rd
Backward dioded 34 connects the 3rd IGBT 28, the 3rd the 6th IGCTs 17 of connection of IGBT 28, and the 6th IGCT 17 is connected back to three
The anode of phase uncontrollable rectifier device 4；3rd IGCT 14 connects the 3rd IGBT 28, the 3rd the 3rd forward diodes of connection of IGBT 28
31, the 3rd forward diode 31 connection RL load the first backward dioded 32 of connection of 35, RL loads 35, the first backward dioded 32
The first IGBT 26, the first the 4th IGCTs 15 of connection of IGBT 26 are connected, the 4th IGCT 15 is connected back to three-phase uncontrollable rectifier device 4
Anode.
The level inverter of Three phase two replaces the IGBT in the level of conventional three-phase two with six IGCTs, can meet
While conventional three-phase two-level inverter over-all properties, cost reduces notable.
The course of work of the present invention is as follows：
When this new level inverter of three-phase two of the present invention is applied in RL 35 systems of load, DC current passes through
First IGCT 12, flow into the first IGBT 26 and divided, by the first forward diode 29,35 are loaded by RL, by the
Two backward diodeds 33, by the 2nd IGBT 27, by the 5th IGCT 16, the anode of three-phase uncontrollable rectifier device 4 is returned to, completed
The first phase course of work；Meanwhile second IGCT 13 connect the 2nd IGBT 27, the 2nd the second forward diodes of connection of IGBT 27
30, the second forward diode 30 connection RL load the 3rd backward dioded 34 of connection of 35, RL loads 35, the 3rd backward dioded 34
The 3rd IGBT 28 is connected, the 3rd the 6th IGCTs 17 of connection of IGBT 28 return to the anode of three-phase uncontrollable rectifier device 4；Also, the
Three IGCTs 14 connect the 3rd IGBT 28, the 3rd the 3rd forward diodes 31 of connection of IGBT 28, the 3rd forward diode 31
Connecting RL and load the first backward dioded 32 of connection of 35, RL loads 35, the first backward dioded 32 connects the first IGBT 26,
First the 4th IGCTs 15 of connection of IGBT 26 return to the anode of three-phase uncontrollable rectifier device 4.
Claims (2)
- A kind of 1. level inverter of Three phase two, it is characterised in that：Including with power network（1）The reactor of connection（2）, surge Protection circuit（3）, three-phase uncontrollable rectifier device（4）, current-limiting circuit（5）, filter capacitor（6）, busbar voltage detection circuit（7）, three Phase inverter circuit（8）, three-phase current detection circuit（9）, drive circuit（10）, control circuit（11）Loaded with RL（35）；Reactance Device（2）Connect surging protection circuit（3）, surging protection circuit（3）Connect three-phase uncontrollable rectifier device（4）, three-phase uncontrollable rectifier device （4）Pass through current-limiting circuit（5）Connect filter capacitor（6）, filter capacitor（6）Connect busbar voltage detection circuit（7）, busbar voltage Detect circuit（7）Connect three-phase inverting circuit（8）, three-phase inverting circuit（8）Connect three-phase current detection circuit（9）With driving electricity Road（10）, drive circuit（10）Connect control circuit（11）, three-phase current detection circuit（9）Connect RL loads（35）；Three-phase inverting circuit（8）It is by the first IGCT（12）, the second IGCT（13）, the 3rd IGCT（14）, the 4th brilliant lock Pipe（15）, the 5th IGCT（16）, the 6th IGCT（17）, the first fly-wheel diode（18）, the second fly-wheel diode（19）, Three fly-wheel diodes（20）, the 4th fly-wheel diode（21）, the 5th fly-wheel diode（22）, the 6th fly-wheel diode（23）, One Absorption Capacitance（24）, the second Absorption Capacitance（25）, the first IGBT（26）, the 2nd IGBT（27）, the 3rd IGBT（28）, first just To diode（29）, the second forward diode（30）, the 3rd forward diode（31）, the first backward dioded（32）, it is second anti- To diode（33）, the 3rd backward dioded（34）The switching bridge of the three-phase nine connection composition of composition；Wherein, the first IGCT （12）With the first fly-wheel diode（18）And first Absorption Capacitance（24）After parallel connection with the first IGBT（26）Series connection, the first IGBT （26）With the first backward dioded（32）And first forward diode（29）Connect and with the second Absorption Capacitance（25）After parallel connection with 4th IGCT（15）Series connection, the 4th IGCT（15）With the 4th fly-wheel diode（21）And Absorption Capacitance is in parallel；Second brilliant lock Pipe（13）With the second fly-wheel diode（19）And after Absorption Capacitance parallel connection with the 2nd IGBT（27）Series connection, the 2nd IGBT（27）With Two backward diodeds（33）And second forward diode（30）Connect and it is in parallel with Absorption Capacitance after with the 5th IGCT（16）String Connection, the 5th IGCT（16）With the 5th fly-wheel diode（22）And Absorption Capacitance is in parallel；3rd IGCT（14）With the 3rd afterflow Diode（20）And after Absorption Capacitance parallel connection with the 3rd IGBT（28）Series connection, the 3rd IGBT（28）With the 3rd backward dioded（34） And the 3rd forward diode（31）Connect and it is in parallel with Absorption Capacitance after with the 6th IGCT（17）Series connection, the 6th IGCT（17） With the 6th fly-wheel diode（23）And Absorption Capacitance is in parallel；First IGCT（12）With the second IGCT（13）And the 3rd IGCT （14）Parallel connection, the 4th IGCT（15）With the 5th IGCT（16）And the 6th IGCT（17）It is in parallel.
- 2. the level inverter of Three phase two according to claim 1, it is characterised in that：First IGBT（26）After frequency dividing Pass through the first forward diode（29）Connect RL loads（35）, RL loads（35）Connect the second backward dioded（33）, second is anti- To diode（33）Connect the 2nd IGBT（27）, the 2nd IGBT（27）Connect the 5th IGCT（16）, the 5th IGCT（16）Even Return to three-phase uncontrollable rectifier device（4）Anode；Second IGCT（13）Connect the 2nd IGBT（27）, the 2nd IGBT（27）Connection second Forward diode（30）, the second forward diode（30）Connect RL loads（35）, RL loads（35）Connect the 3rd backward dioded （34）, the 3rd backward dioded（34）Connect the 3rd IGBT（28）, the 3rd IGBT（28）Connect the 6th IGCT（17）, the 6th is brilliant Brake tube（17）It is connected back to three-phase uncontrollable rectifier device（4）Anode；3rd IGCT（14）Connect the 3rd IGBT（28）, the 3rd IGBT （28）Connect the 3rd forward diode（31）, the 3rd forward diode（31）Connect RL loads（35）, RL loads（35）Connection the One backward dioded（32）, the first backward dioded（32）Connect the first IGBT（26）, the first IGBT（26）Connect the 4th brilliant lock Pipe（15）, the 4th IGCT（15）It is connected back to three-phase uncontrollable rectifier device（4）Anode.
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| CN201610018885.7A CN105450066B (en) | 2016-01-13 | 2016-01-13 | The level inverter of Three phase two |
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