CN203180792U - Integrated gate pole commutated thyristor five-level power cabinet - Google Patents
Integrated gate pole commutated thyristor five-level power cabinet Download PDFInfo
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- CN203180792U CN203180792U CN 201320107410 CN201320107410U CN203180792U CN 203180792 U CN203180792 U CN 203180792U CN 201320107410 CN201320107410 CN 201320107410 CN 201320107410 U CN201320107410 U CN 201320107410U CN 203180792 U CN203180792 U CN 203180792U
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Abstract
The utility model discloses an integrated gate pole commutated thyristor (IGCT) five-level power cabinet, comprising a phase-shifting transformer unit cabinet, a five-level power unit cabinet and a filtering and load wiring unit cabinet, wherein the phase-shifting transformer unit cabinet comprises an 18-path pulse phase-shifting transformer and a fan; the five-level power unit cabinet comprises three sets of mutually independent five-level power module units, wherein each five-level power module unit is provided with a multipath isolation output power supply; each set of five-level power module unit is composed of a single-phase five-level main circuit module, a three-phase uncontrollable rectification module, a partial pressure capacitor and a peripheral circuit module; the single-phase five-level main circuit module is composed of two same three-level power units in parallel connection; the filtering and load wiring unit cabinet includes a three-phase RC filtering circuit and a load wiring circuit. The IGCT five-level power cabinet possesses a modularized structure which can minimize circuit stray inductance and raise apparatus output capability, is convenient for installation assembly and is suitable for different engineering requirements.
Description
Technical field
The utility model belongs to the technical field of semiconductor switch, especially, relate to a kind of high-tension integral gate change transistor (Integrated Gate Commutated Thyristor, IGCT) five level power cabinets, it is applicable to MW (Mega Watt) class large power current transformer, can be widely used in the high-power transmission field.
Background technology
Integral gate change transistor IGCT is at turn-off thyristor (Gate Tum-Off Thyristor, the modified form device of doing on basis GTO).It is as a kind of novel power electronic device, GTO chip and inverse parallel diode and gate drive circuit are integrated, be connected in low inductance mode in the periphery with the IGCT gate driver again, thereby combine the advantage of the low on-state loss of the stable turn-off capacity of transistor and thyristor.IGCT is in the performance of conduction period performance thyristor, off-phases is and is similar to characteristics of transistor, it adopts hard-drive, resilient coating, transparent emitting stage and contrary new technology such as lead, have that electric current is big, voltage is high, switching frequency is high, reliability is high, compact conformation, loss is low, the safety operation area is big and need not under the situation of equalizer circuit the directly characteristics of tandem working, be a kind of more satisfactory MW level mesohigh semiconductor switch device.
Mesohigh multi-level frequency conversion device is mainly used in high-power transmission fields such as electric power, colliery, metallurgy, cement, petrochemical industry, boats and ships and railway, and dv/dt is little for its voltage change ratio, and the output voltage current harmonic content is low, and the voltage withstand class of device for power switching is low.The existing mesohigh big-power transducer three level NPC topological structures that adopt, its output phase voltage is four level progression more.H bridge cascade connection type topological structure is also arranged in addition, can obtain different output-voltage levels progression by cascade.The application technology of IGCT is very ripe in the world at present, is widely used in the mesohigh frequency converter, but but also is in the starting stage at home.Complete IGCT inverter circuit comprises IGCT, inverse parallel diode, clamp circuit device etc., if these assemblies are disperseed to be electrically connected with bus or lead after the assembling again, not only its to take volume bigger, and online loop area is bigger, thereby causes the circuit stray inductance to increase.The increase of stray inductance can make the shutoff voltage of IGCT raise.At this time for the safety that guarantees IGCT just must reduce output current, thereby cause reducing of power output.In addition, the (PCC) power of IGCT disperses to install, and also is unfavorable for the carrying out of maintenance work.
The utility model content
Because the above-mentioned defective of prior art, technical problem to be solved in the utility model provides a kind of integral gate change transistor five level power cabinets, has the circuit of minimizing stray inductance, improve the modular structure of device fan-out capability, be convenient to install winding, applicable to different engine requests.
For achieving the above object, the utility model provides a kind of integral gate change transistor five level power cabinets, it comprises phase shifting transformer unit cabinet, five level power unit cabinets and filtering and load wiring unit cabinet, wherein, described phase shifting transformer unit cabinet comprises 18 tunnel pulse phase shifting transformer and fans; Described five level power unit cabinets comprise three groups of five separate electrical level power module unit, all have a multichannel on every group of five electrical level power module unit and isolate the output power supply; Every group of five electrical level power module unit are made of single-phase five level main circuit modules, the uncontrollable rectification module of three-phase, dividing potential drop electric capacity and peripheral circuit module; Described single-phase five level main circuit modules are made of two three identical level power unit parallel connections; Described filtering and load wiring unit cabinet comprise three-phase RC filter circuit and load wiring circuit.
As above-mentioned integral gate change transistor five level power cabinets, wherein: each three level power unit comprises that two neutral point clamp diodes, four IGCT assemblies and four bufferings absorb circuit.
As above-mentioned integral gate change transistor five level power cabinets, wherein: each device in the described three level power unit evenly is fixed on the radiator.
As above-mentioned integral gate change transistor five level power cabinets, wherein: three groups of three-phase outputs of isolating of described 18 tunnel pulse phase shifting transformers are connected by lead with three groups of three-phase alternating current busbars of described five level power unit cabinets respectively.
As above-mentioned integral gate change transistor five level power cabinets, wherein: the five electrical level power module unit output bus row in the described five level power unit cabinets and described filtering are connected by lead with three-phase RC filter circuit in the load wiring unit cabinet.
As above-mentioned integral gate change transistor five level power cabinets, wherein: the length and width height of described five level power unit cabinets is respectively 1200mm, 1000mm and 2000mm.
As above-mentioned integral gate change transistor five level power cabinets, wherein: the length and width height of described filtering and load wiring unit cabinet is respectively 1000mm, 1000mm and 2000mm.
Therefore, integral gate change transistor five level power cabinets of the present utility model have following beneficial technical effects:
(1) adopts 18 tunnel pulse phase shifting transformers and neutral-point-clamped/H bridge (NPC/H) five-level high-voltage frequency converter circuit structure, the uncontrollable rectification module of three-phase, dividing potential drop electric capacity and peripheral circuit module and IGCT five electrical level power module are integrated in the five level power unit cabinets, have effectively reduced and taken volume;
(2) adopt neutral-point-clamped/H bridge (NPC/H) five level inverter circuit structures, improved electric pressure, solved the problem of power electronics assembly device withstand voltage deficiency, reduced the circuit stray inductance, improved the fan-out capability of device;
(3) power model cellular construction compactness helps the work such as installation, debugging and maintenance of sub-power cell cabinet, has improved operating efficiency.Loading and unloading are convenient, compact conformation, and volume is less.
Description of drawings
Fig. 1 is integral gate change transistor five level frequency conversion device system diagram of the present utility model.
Fig. 2 is the Facad structure schematic diagram of integral gate change transistor five level power cabinets of the present utility model.
Embodiment
Be described further below with reference to the technique effect of accompanying drawing to design of the present utility model, concrete structure and generation, to understand the purpose of this utility model, feature and effect fully.
Fig. 1 is integral gate change transistor five level frequency conversion device system diagram of the present utility model.Comprise pre-charge circuit, No. 18 pulse transformers, rectifier bridge, NPC/H inverter.Wherein control system adopts the DSP+FPGA structure.Each drive plate triggers two igbts (IGBT), needs 12 blocks of pulsed drive plates altogether.
Fig. 2 is a kind of embodiment of integral gate change transistor five level power cabinets of the present utility model, and it comprises phase shifting transformer unit cabinet 1, five level power unit cabinets 4 and filtering and load wiring unit cabinet 9.Wherein, comprise 18 tunnel pulse phase shifting transformers 11 in the phase shifting transformer unit cabinet 1, thereby reach the purpose of multiple rectifying, Harmonics of Input is sharply reduced, realize between the high and low pressure simultaneously and each winding of low pressure between mutually insulated.Comprise three groups of five separate electrical level power module unit 5 in the five level power unit cabinets 4, every group of five electrical level power module unit 5 are made of single-phase five level main circuit modules, the uncontrollable rectification module of three-phase, dividing potential drop electric capacity and peripheral circuit module.Single-phase five level main circuit modules are made of two three identical level power unit parallel connections, and each three level power unit comprises that two neutral point clamp diodes, four IGCT assemblies, four bufferings absorb circuit.Each device in the three level power unit evenly is fixed on the radiator, and compact conformation.Filtering and load wiring unit cabinet 9 comprise three-phase RC filter circuit 10 and load wiring circuit, three-phase by lead one by one correspondence connect.
In specific embodiment, the overall dimensions of phase shifting transformer unit cabinet 1 are 1200mm * 1000mm * 2000mm (length * wide * height).In whole cabinet, fixedly mount 18 tunnel pulse phase shifting transformers 11, fan 2 is installed at the top, is used for the air cooling heat radiation.Three groups of three-phase outputs of isolating of 18 tunnel pulse phase shifting transformers 11 realize being connected by lead with three groups of three-phase alternating current busbars 3 of five level power unit cabinets 4 respectively.
The overall dimensions of five level power unit cabinets 4 are 1200mm * 1000mm * 2000mm (length * wide * height).In five level power unit cabinets 4, be divided into three layers in from top to bottom, arrange one group of five electrical level power module unit 5 for every layer, every pack module unit is a mutually complete brachium pontis.Three-phase alternating current busbar 3 is connected by lead with the output of 18 tunnel pulse phase shifting transformers 11 respectively, and five electrical level power module unit output bus row 6 and three-phase RC filter circuit 10 are connected by lead, for exporting electric energy.Optic module 7 is connected with controller by optical fiber, and power source bus row 8 is connected by lead with external ac power source.All having a multichannel on every group of five electrical level power module unit 5 and isolate the output power supply, is phase power model power supply simultaneously.Every group of highly integrated, compact conformation in five electrical level power module unit 5, this structure makes that the connection between each device is the shortest, has reduced stray inductance therebetween effectively, and is convenient to change, safeguard.When needing to change five electrical level power module unit 5, only need the disconnection that is connected with the outside with the three-phase alternating current busbar 3 in the five electrical level power module unit 5, five electrical level power module unit output bus row 6, optic module 7 and power source bus row 8, whole modular unit integral body can be shifted out.The effect that exchanges overlap joint busbar 3 is to introduce three-phase alternating current from phase shifting transformer unit cabinet 1, and optic module 7 adopts Optical Fiber Transmission switching pulse, reliability height.
The overall dimensions of filtering and load wiring unit cabinet 9 are 1000mm * 1000mm * 2000mm (length * wide * height), mainly contain three-phase RC filter circuit and load wiring circuit 10 in the cabinet.
More than describe preferred embodiment of the present utility model in detail.The ordinary skill that should be appreciated that this area need not creative work and just can make many modifications and variations according to design of the present utility model.Therefore, all technical staff in the art comply with design of the present utility model on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment, all should be in the determined protection range by claims.
Claims (7)
1. integral gate change transistor five level power cabinets, it is characterized in that: comprise phase shifting transformer unit cabinet, five level power unit cabinets and filtering and load wiring unit cabinet, wherein, described phase shifting transformer unit cabinet comprises 18 tunnel pulse phase shifting transformer and fans; Described five level power unit cabinets comprise three groups of five separate electrical level power module unit, all have a multichannel on every group of five electrical level power module unit and isolate the output power supply; Every group of five electrical level power module unit are made of single-phase five level main circuit modules, the uncontrollable rectification module of three-phase, dividing potential drop electric capacity and peripheral circuit module; Described single-phase five level main circuit modules are made of two three identical level power unit parallel connections; Described filtering and load wiring unit cabinet comprise three-phase RC filter circuit and load wiring circuit.
2. integral gate change transistor five level power cabinets as claimed in claim 1 is characterized in that: each three level power unit comprises that two neutral point clamp diodes, four IGCT assemblies and four bufferings absorb circuit.
3. integral gate change transistor five level power cabinets as claimed in claim 1, it is characterized in that: each device in the described three level power unit evenly is fixed on the radiator.
4. integral gate change transistor five level power cabinets as claimed in claim 1 is characterized in that: three groups of three-phases outputs of isolating of described 18 tunnel pulse phase shifting transformers are connected by lead with three groups of three-phase alternating current busbars of described five level power unit cabinets respectively.
5. integral gate change transistor five level power cabinets as claimed in claim 1 is characterized in that: the five electrical level power module unit output bus row in the described five level power unit cabinets and described filtering are connected by lead with three-phase RC filter circuit in the load wiring unit cabinet.
6. integral gate change transistor five level power cabinets as claimed in claim 1, it is characterized in that: the length and width height of described five level power unit cabinets is respectively 1200mm, 1000mm and 2000mm.
7. integral gate change transistor five level power cabinets as claimed in claim 1, it is characterized in that: the length and width height of described filtering and load wiring unit cabinet is respectively 1000mm, 1000mm and 2000mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320107410 CN203180792U (en) | 2013-03-07 | 2013-03-07 | Integrated gate pole commutated thyristor five-level power cabinet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320107410 CN203180792U (en) | 2013-03-07 | 2013-03-07 | Integrated gate pole commutated thyristor five-level power cabinet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203180792U true CN203180792U (en) | 2013-09-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320107410 Expired - Fee Related CN203180792U (en) | 2013-03-07 | 2013-03-07 | Integrated gate pole commutated thyristor five-level power cabinet |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203180792U (en) |
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2013
- 2013-03-07 CN CN 201320107410 patent/CN203180792U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130904 Termination date: 20160307 |