CN203233636U - Novel power radiating fin structure, and connection structure of MOS Transistor and PCB - Google Patents

Novel power radiating fin structure, and connection structure of MOS Transistor and PCB Download PDF

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Publication number
CN203233636U
CN203233636U CN 201320233303 CN201320233303U CN203233636U CN 203233636 U CN203233636 U CN 203233636U CN 201320233303 CN201320233303 CN 201320233303 CN 201320233303 U CN201320233303 U CN 201320233303U CN 203233636 U CN203233636 U CN 203233636U
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China
Prior art keywords
brace
radiating fin
leg
fin structure
novel power
Prior art date
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Active
Application number
CN 201320233303
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Chinese (zh)
Inventor
张莉
祝长军
陈正月
徐军伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ningbo Sainaibi Photoelectric Technology Co ltd
Original Assignee
NINGBO SNAPPY OPTOELECTRONICS CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to CN 201320233303 priority Critical patent/CN203233636U/en
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Publication of CN203233636U publication Critical patent/CN203233636U/en
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Abstract

The utility model relates to a power radiating fin structure. The power radiating fin structure comprises a radiating fin body, and is characterized in that the radiating fin body comprises a first connecting sheet and a second connecting sheet, the first connecting sheet and the second connecting sheet are interconnected in an L shape, the first connecting sheet is provided with a welding leg, isolated slots are disposed between the welding leg and the first connecting sheet, and the second connecting sheet is provided with mounting holes. Compared with the prior art, the utility model has the advantages that the radiating fin is simple in production technology, easy in machining, low in cost, efficient in assembling, applicable to batch production, easy in welding with the welding leg, and high in production efficiency.

Description

The syndeton of novel power supply heat radiating fin structure and metal-oxide-semiconductor and pcb board
Technical field
The utility model relates to the syndeton that a kind of novel power supply heat radiating fin structure and utilization have metal-oxide-semiconductor and the pcb board of this novel power supply heat radiating fin structure.
Background technology
Fin is a kind of important components and parts, plays to high heat-generating electronic elements heat radiation, increases the electronic product important function in useful life.Fin, thus generally be heat is led on the fin rapidly and efficiently on the heat-generating electronic elements directly or by the insulating trip indirect securement.Influenced by product space and circuit structure, needing on the fin sometimes has leg that fin is soldered on the pcb board.Yet fin all is thermal conductivity, and very high material is made, and the leg heat is led rapidly and caused on the fin being difficult to burn-on during welding.To workman's technical merit of welding and having relatively high expectations of electric iron, production efficiency is low simultaneously.
The utility model content
Technical problem to be solved in the utility model is to provide a kind of welded and installed novel power supply heat radiating fin structure easily at above-mentioned prior art.
The utility model solves the problems of the technologies described above the technical scheme that adopts: this novel power supply heat radiating fin structure, comprise heat sink body, be connected with leg on the fin, it is characterized in that: described heat sink body comprises first brace and second brace, first brace and second brace interconnect and are the L type, described leg is arranged on first brace, and is provided with isolation channel between leg and first brace, and second brace is provided with installing hole.
As improvement, described leg directly is arranged on first brace by the mode of punching press, and the length of leg extends outside first brace, and the isolation channel that arranges between leg and first brace has two.
Utilization has the above-mentioned syndeton of stating metal-oxide-semiconductor and the pcb board of heat radiating fin structure, metal-oxide-semiconductor is adjacent in L type heat sink body, fix by screw between the installing hole on location hole on the metal-oxide-semiconductor and second brace, metal-oxide-semiconductor is welded on the pcb board, and the leg on first brace of fin also directly is welded on the pcb board.
Compared with prior art, advantage of the present utility model is: the novel power supply heat radiating fin structure that the utility model provides, and its production technology is simple, easy to process, with low cost, quick, suitable mass production easy to assembly, be provided with leg and weld easily, the production efficiency height.
Description of drawings
Fig. 1 is the perspective view of novel power supply heat radiating fin structure among the utility model embodiment;
Fig. 2 is the syndeton schematic diagram of metal-oxide-semiconductor and pcb board among the utility model embodiment.
Embodiment
Describe in further detail below in conjunction with the utility model of accompanying drawing embodiment.
Novel power supply heat sink body is as shown in Figure 1 formed by the stamping die stamping-out, it comprises first brace 1 and second brace 2, first brace 1 and second brace 2 interconnect and are the L type, described first brace 1 is provided with leg 3, and the length of leg 3 is extended outside first brace 1, two isolation channels, 11, the second braces 2 are set between leg 3 and first brace 2 are provided with installing hole 21.
Use the metal-oxide-semiconductor of said structure fin and the syndeton of pcb board, rivet 6 is secured together fin and metal-oxide-semiconductor 4 after by the location hole 31 of the installing hole 21 on second brace 2 and metal-oxide-semiconductor 4, metal-oxide-semiconductor 4 and fin is soldered on the pcb board 5 again.Fin is when weld with pcb board, and the heat when welding leg 3 is subjected to stopping of two grooves 11 to accumulate in leg 3, and weld job can be finished like a cork like this, referring to shown in Figure 2.Do not influence heat dispersion and and the processing and fabricating cost of fin during use again.

Claims (3)

1. novel power supply heat radiating fin structure, comprise heat sink body, it is characterized in that: described heat sink body comprises first brace and second brace, first brace and second brace interconnect and are the L type, described first brace is provided with leg, and be provided with isolation channel between leg and first brace, second brace is provided with installing hole.
2. novel power supply heat radiating fin structure according to claim 1, it is characterized in that: described leg directly is arranged on first brace by the mode of punching press, and the length of leg is extended outside first brace, and the isolation channel that arranges between leg and first brace has two.
3. a utilization is just like the metal-oxide-semiconductor of power 1 described novel power supply heat radiating fin structure and the syndeton of pcb board, it is characterized in that: metal-oxide-semiconductor is adjacent in L type heat sink body, fix by screw between the installing hole on location hole on the metal-oxide-semiconductor and second brace, metal-oxide-semiconductor is welded on the pcb board, and the leg on first brace of fin also directly is welded on the pcb board.
CN 201320233303 2013-04-28 2013-04-28 Novel power radiating fin structure, and connection structure of MOS Transistor and PCB Active CN203233636U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201320233303 CN203233636U (en) 2013-04-28 2013-04-28 Novel power radiating fin structure, and connection structure of MOS Transistor and PCB

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201320233303 CN203233636U (en) 2013-04-28 2013-04-28 Novel power radiating fin structure, and connection structure of MOS Transistor and PCB

Publications (1)

Publication Number Publication Date
CN203233636U true CN203233636U (en) 2013-10-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201320233303 Active CN203233636U (en) 2013-04-28 2013-04-28 Novel power radiating fin structure, and connection structure of MOS Transistor and PCB

Country Status (1)

Country Link
CN (1) CN203233636U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110120736A (en) * 2018-02-05 2019-08-13 台达电子企业管理(上海)有限公司 Water cooling power module
WO2020006794A1 (en) * 2018-07-03 2020-01-09 深圳威迈斯电源有限公司 Mounting structure and mounting method for switching transistors

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110120736A (en) * 2018-02-05 2019-08-13 台达电子企业管理(上海)有限公司 Water cooling power module
US10811958B2 (en) 2018-02-05 2020-10-20 Delta Electronics (Shanghai) Co., Ltd Water-cooling power supply module
CN110120736B (en) * 2018-02-05 2021-04-23 台达电子企业管理(上海)有限公司 Water-cooling power supply module
WO2020006794A1 (en) * 2018-07-03 2020-01-09 深圳威迈斯电源有限公司 Mounting structure and mounting method for switching transistors

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C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: NINGBO SNAPPY OPTOELECTRONICS TECHNOLOGY CO., LTD.

Free format text: FORMER NAME: NINGBO SNAPPY OPTOELECTRONICS CO., LTD.

CP01 Change in the name or title of a patent holder

Address after: 315040 No. 56, Keda Road, National Science and technology hi tech park, Zhejiang, Ningbo

Patentee after: NINGBO SNAPPY OPTOELECTRONICS Co.,Ltd.

Address before: 315040 No. 56, Keda Road, National Science and technology hi tech park, Zhejiang, Ningbo

Patentee before: NINGBO SNAPPY OPTOELECTRONICS Co.,Ltd.

CP03 Change of name, title or address

Address after: No. 122315000 Jianlan Road, Gaoxin District, Ningbo, Zhejiang

Patentee after: Ningbo sainaibi Photoelectric Technology Co.,Ltd.

Address before: 315040 No. 56 Keda Road, National High Tech Park, Ningbo, Zhejiang

Patentee before: NINGBO SNAPPY OPTOELECTRONICS Co.,Ltd.

CP03 Change of name, title or address