CN203103285U - High-density etching lead frame FCAAQFN packaging piece - Google Patents
High-density etching lead frame FCAAQFN packaging piece Download PDFInfo
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- CN203103285U CN203103285U CN2012206922216U CN201220692221U CN203103285U CN 203103285 U CN203103285 U CN 203103285U CN 2012206922216 U CN2012206922216 U CN 2012206922216U CN 201220692221 U CN201220692221 U CN 201220692221U CN 203103285 U CN203103285 U CN 203103285U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The utility model discloses a high-density etching lead frame FCAAQFN packaging piece mainly comprising selected plating layers, chips, bumps, a DAF film, gold threads, a plastic-sealed body, a corrosion thinning rear copper frame, photoinduced anti-corrosion plating material, corrosion rear pins, a solder mask and solder balls. The high-density etching lead frame FCAAQFN packaging piece can satisfy requirements of high density, high performance, multi functions, and high I/O number packaging.
Description
Technical field
The utility model relates to electronic information Element of automatic control manufacturing technology field, specifically a kind of high-density etch lead frame FCAAQFN packaging part.
Background technology
The Electronic Packaging of today not only will provide the protection of chip; the increase that also will satisfy functional chip speed such as ever-increasing performance, reliability, heat radiation, power division and disposal ability simultaneously under certain cost is a needs more pins number, clock frequency and better power distribution faster.The market demand electronic product has greater functionality, longer battery life and littler physical dimension.
In recent years, along with the fast development of mobile communication and mobile computer field portable electronic devices and components, compact package and high density packaging technique have obtained significant progress; Simultaneously, also a series of strict demands have been proposed the compact package technology, such as, require the packaging appearance size to dwindle (especially packaging height is less than 1 ㎜) as far as possible.Connection reliability after the encapsulation improves as far as possible, adapted to leadless welding (protection environment) and effectively reducing cost.
Because traditional encapsulation technology can't satisfy the demand in current market, and the development of carrier-free grid array (being AAQFN) encapsulation has adapted to current demand, the AAQFN bottom does not have soldered ball, pin directly is connected with pcb board during welding, with the electric and mechanical connection of PCB be by on the PCB pad, printing soldering paste, the solder joint that cooperates the SMT reflow soldering process to form is realized.This technology encapsulation can realize many pins, high density, small-sized slimming encapsulation under same size condition, have characteristics such as thermal diffusivity, electrical property and coplanarity are good.But because restrictions such as technical difficulty, the popularization of AAQFN product on market at present acquires a certain degree of difficulty, and especially aspect reliability, directly influences the use and the life-span of product, become the research of technique difficult point of AAQFN packaging part.
On the basis of AAQFN, the integrated circuit encapsulation technology of FCAAQFN (Quad Flat No Lead Package) type multi-turn array packages is the development abroad a kind of novel small form height density I/O encapsulation technology of getting up in recent years, is one of state-of-the-art surface mount encapsulation technology.Because no pin, to mount occupied area little, characteristics such as setting height(from bottom) is low, for satisfying the portable e-machine in mobile communication and mobile computer field, use and a kind of novel encapsulated technology living and that shoot up as the needs of ultrathin electronic product development such as PDA, 3G mobile, MP3, MP4, MP5.Present encapsulation technology does not satisfy the needs that high density, many I/O encapsulate because pin is few, and promptly I/O is few, therefore, the FCAAQFN Development of Packaging Technology of novel high-density I/O is become inexorable trend.
The utility model content
Technical problem to be solved in the utility model is to develop a kind of high-density etch lead frame FCAAQFN packaging part on the basis of conventional process techniques, this technology is the technology by core on core in the upside-down mounting and the secondary, two Chip Packaging are arrived in the same device, form a complete system or subsystem, realized the cord array layout.FCAAQFN is on the basis of many row FCQFN encapsulation technologies, grope the test tackling key problem voluntarily, break through its technological difficulties, this encapsulation technology realizes the pad array layout, increase the I/O number greatly, it combines the advantage of upside-down mounting and lead-in wire key and technology, FC makes joint efficiency higher, shorten electric current and signal transmission distance, improved electrical property and product reliability, in addition, FCAAQFN has miniaturization, high reliability, the shorter encapsulation cycle, numerous advantages such as low cost, can satisfy high density, high-performance, the requirement of multi-functional and high I/O number encapsulation, thus domestic blank filled up, possess international most advanced level.
The technical solution of the utility model is: a kind of high-density etch lead frame FCAAQFN packaging part comprise the copper lead frame, partly corrode the copper framework, select copper framework behind coating, chip, salient point, chip, DAF film, gold thread, plastic-sealed body, the corrosion thinning, photoresist coating material, corrosion back pin, green lacquer, tin ball.Described copper coin at first carries out half corrosion, described partly corroding on the copper coin after selecting coating to be bonded in to etch partially, then bottom chip is bonded on the half corrosion copper coin by the salient point upside-down mounting, described second chip is connected with bottom chip by the DAF film, and second chip is connected with selecting the coating routing by spun gold, carry out plastic packaging with plastic-sealed body then, described copper coin is behind attenuate, then the copper coin bottom is applied the photoresist coating material, the copper framework is carried out etching, separate pin and clean the part that the copper coin framework after the etching etches away between the pin with green lacquer filling copper framework subsequently.At last, the pin after separating is implanted the tin ball, perhaps to pin plating chemical nickel porpezite.
A kind of manufacture craft of high-density etch lead frame FCAAQFN packaging part, it carries out according to following steps: in wafer attenuate, wafer scribing, the etching of copper framework, choosing plating, the upside-down mounting on core, backflow, cleaning, the secondary core, baking, routing, plastic packaging, back curing, framework etching attenuate, development figure, framework burn into be coated with green lacquer, plant ball.
A kind of characteristics of high-density etch lead frame FCAAQFN encapsulation technology are: etch earlier the pin projection on the naked copper sheet, next is core and baking subsequently on core and the secondary in the Flip Chip upside-down mounting, solidify behind backflow and cleaning, the plastic packaging, then, base of frame attenuate, etching, separation pin, green lacquer are filled.At last, plant ball or pin is plated the chemical nickel porpezite separating pin.
The QFN series of products are in the extensive use of each different field and growth fast, expection will promote the research and development and the production of high density FCAAQFN new product, acceleration is penetrated in the consumption electronic product of dominance, drives the quick production domesticization development of industries such as domestic mobile phone, e-book, automobile.
Figure of description
Fig. 1 is a copper framework profile;
Fig. 2 partly corrodes profile for the copper framework;
Fig. 3 is copper framework choosing plating profile;
Fig. 4 is core profile in the upside-down mounting;
Fig. 5 is a core profile on the secondary;
Fig. 6 is the routing profile;
Fig. 7 is the plastic packaging profile;
Fig. 8 is the corrosion thinning profile;
Fig. 9 is a development figure profile;
Figure 10 is the corrosion profile;
Figure 11 is for being coated with green lacquer profile;
Figure 12 is for planting the ball profile.
Among the figure, 1 for copper lead frame, 2 be half corrosion copper framework, 3 for select coating, 4 for chip, 5 for salient point, 6 for chip, 7 for the DAF film, 8 for gold thread, 9 for plastic-sealed body, 10 for copper framework behind the corrosion thinning, 11 for the photoresist coating material, 12 for corrosion back pin, 13 for green lacquer, 14 be the tin ball.
Embodiment
Below in conjunction with accompanying drawing the utility model is done and to be described in further detail.
As shown in the figure, a kind of high-density etch lead frame FCAAQFN packaging part, comprise copper lead frame 1, partly corrode copper framework 2, select copper framework 10 behind coating 3, chip 4, salient point 5, chip 6, DAF film 7, gold thread 8, plastic-sealed body 9, the corrosion thinning, photoresist coating material 11, corrosion back pin 12, green lacquer 13, tin ball 14.Described copper coin 1 at first carries out half corrosion, described partly corroding on the copper coin 2 after selecting coating 3 to be bonded in to etch partially, then chip 4 is bonded on the half corrosion copper coin 2 by salient point 5 upside-down mountings, cleaning subsequently refluxes, described chip 6 is connected with chip 4 by DAF film 7, toast, by spun gold 8 chip 6 is connected with selecting coating 3 routings then, carry out plastic packaging with plastic-sealed body 9 then, described copper coin 2 is copper coin 10 after being corrosion thinning behind the attenuate, then the copper coin bottom is applied photoresist coating material 11, the copper framework is carried out etching, separate pin and cleaning, subsequently with 12 parts that etch away of pin after the corrosion of green lacquer 13 filling copper frameworks, at last, implant tin ball tin ball 14, perhaps to corroding back pin 12 plating chemical nickel porpezites to corroding back pin 12.
As shown in the figure, a kind of manufacture craft of high-density etch lead frame FCAAQFN packaging part, it carries out according to following steps:
The first step, wafer attenuate: adopt to prevent that fragment technology from reducing to specific thickness;
Second step, wafer scribing: the above wafer of thickness 150 μ m is with common scribing process, but thickness uses double-pole scribing machine and technology thereof at the following wafer of 150 μ m;
Core, backflow and cleaning in the 3rd step, the upside-down mounting: before the core, need to carry out 1 etching of copper lead frame in the upside-down mounting, blue ink (photosensitive material) is coated in the specific region on copper lead frame 1 surface by the mode of silk screen printing; Then, salient point 5 dips in scaling powder on the chip 4, is easy to salient point 5 and the welding of partly corroding copper framework 2; Then, carry out core in the upside-down mounting, will dip on the chip 4 on the projection that partly corrodes copper framework 2 after the etching of core in salient point 5 upside-down mountings of an amount of scaling powder, reflux 260 ℃ of reflux temperatures, return time 50 ~ 70s then, cleaning temperature is 42 ℃, and pressure is 40psi, cleans transmission speed 0.8m/min;
Core and baking on the 4th step, the secondary: the chip 6 that the back side is stained with DAF film 7 bonds on the chip 4, DAF film 7 is bonding with chip 4, toasts then, and the chip integral body behind the last core is continued 150 ℃ of bakings 30 minutes, lowered the temperature then 30 minutes, temperature is reduced to 50 ℃;
The 5th step, routing: the aluminium pad on the chip 6 is connected with selecting coating 3 by gold thread 8;
Solidify the 6th step, plastic packaging and back: chip 4 that core in the upside-down mounting is good and 6 usefulness plastic packaging materials 8 carry out plastic packaging, and carry out back curing;
The 7th step, framework corrosion thinning: will partly corrode copper framework 2 lower bottom parts and be thinned to thin thickness and be copper framework 10 behind the corrosion thinning, and be convenient to after etching;
The 8th step, development figure and resist coating: will have the photomask blank (exposed film) of figure to utilize a kind of ultraviolet light perspective, with the figure optics video picture of needs copper framework 10 bottoms behind the corrosion thinning, under the effect by liquid medicine sodium carbonate, after the printing ink dissolving and flushing with unexposed portion, stay the part of sensitization, for copper framework 10 gluings behind the corrosion thinning, exposure, client's graphic documentation is transferred on the plank with the form of positive or negative film, simultaneously with the polymerization under high-energy of dry film/wet film, make the photoimaging wet film accept ultraviolet irradiation, form free radical chain polymerization, polymer molecule is increased, and this moment, wet film was insoluble to weak base (1% Na2CO3), developed subsequently, be that printing ink with unexposed portion removes, stay the part of sensitization, the photosensitive material of unexposed portion does not have polymerization reaction take place, meets weak base Na2CO3(1.0%) dissolving, the photoresist coating material 11 of polymerization is then stayed on the plate face, the not etched liquid medicine dissolving of copper face that protection is following;
The 9th step: the framework corrosion etches away unexposed copper on the copper framework 10 behind the corrosion thinning, forms corrosion back pin 12;
The tenth step, be coated with green lacquer: will corrode between the pin 12 of back after the etching space with green lacquer 13 fillings;
The 11 step, plant ball or chemical nickel plating porpezite: pin 12 is implanted tin ball 14 or chemical nickel plating porpezites after corrosion.
Claims (2)
1. high-density etch lead frame FCAAQFN packaging part is characterized in that: mainly by selecting copper framework (10) behind coating (3), chip (4), salient point (5), chip (6), DAF film (7), gold thread (8), plastic-sealed body (9), the corrosion thinning, photoresist coating material (11), corrosion back pin (12), green lacquer (13) and tin ball (14) to form; Described select coating (3) and corrosion thinning after copper framework (10) bonding, copper framework (10) was bonding after described chip (4) passed through salient point (5) and corrosion thinning, described chip (6) is connected with chip (4) by DAF film (7), described spun gold (8) is connected chip (6) with selecting coating (3) routing, described plastic-sealed body (9) is to the packaging part plastic packaging; Copper framework (10) bottom is coated with photoresist coating material (11) behind the corrosion thinning, copper framework (10) extends to corrosion back pin (12) behind the corrosion thinning, described green lacquer (13) is filled the part that etches away between the corrosion back pin (12), and corrosion back pin (12) is implanted tin ball (14).
2. a kind of high-density etch lead frame FCAAQFN packaging part according to claim 1 is characterized in that: described corrosion back pin (12) can plate the chemical nickel porpezite and replace tin ball (14).
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012206922216U CN203103285U (en) | 2012-12-15 | 2012-12-15 | High-density etching lead frame FCAAQFN packaging piece |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012206922216U CN203103285U (en) | 2012-12-15 | 2012-12-15 | High-density etching lead frame FCAAQFN packaging piece |
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| CN203103285U true CN203103285U (en) | 2013-07-31 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094240A (en) * | 2012-12-15 | 2013-05-08 | 华天科技（西安）有限公司 | High-density etched lead frame FCAAQFN package part and manufacture process thereof |
| CN103698968A (en) * | 2013-12-10 | 2014-04-02 | 华进半导体封装先导技术研发中心有限公司 | Photoresistance wall forming method |
| CN103698969A (en) * | 2013-12-10 | 2014-04-02 | 华进半导体封装先导技术研发中心有限公司 | Molding method of photoresist wall |
| CN103728830A (en) * | 2013-12-10 | 2014-04-16 | 华进半导体封装先导技术研发中心有限公司 | Modular molding method for light resistance wall structure |
| CN104900545A (en) * | 2015-04-27 | 2015-09-09 | 杰群电子科技（东莞）有限公司 | Semiconductor encapsulation method |
| CN106575646A (en) * | 2014-08-26 | 2017-04-19 | 友立材料株式会社 | Lead frame and production method therefor |
-
2012
- 2012-12-15 CN CN2012206922216U patent/CN203103285U/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094240A (en) * | 2012-12-15 | 2013-05-08 | 华天科技（西安）有限公司 | High-density etched lead frame FCAAQFN package part and manufacture process thereof |
| CN103698968A (en) * | 2013-12-10 | 2014-04-02 | 华进半导体封装先导技术研发中心有限公司 | Photoresistance wall forming method |
| CN103698969A (en) * | 2013-12-10 | 2014-04-02 | 华进半导体封装先导技术研发中心有限公司 | Molding method of photoresist wall |
| CN103728830A (en) * | 2013-12-10 | 2014-04-16 | 华进半导体封装先导技术研发中心有限公司 | Modular molding method for light resistance wall structure |
| CN103698968B (en) * | 2013-12-10 | 2017-01-25 | 华进半导体封装先导技术研发中心有限公司 | Photoresistance wall forming method |
| CN103728830B (en) * | 2013-12-10 | 2017-02-01 | 华进半导体封装先导技术研发中心有限公司 | Modular molding method for light resistance wall structure |
| CN103698969B (en) * | 2013-12-10 | 2017-09-29 | 华进半导体封装先导技术研发中心有限公司 | Light-resistance wall forming method |
| CN106575646A (en) * | 2014-08-26 | 2017-04-19 | 友立材料株式会社 | Lead frame and production method therefor |
| KR20170048351A (en) * | 2014-08-26 | 2017-05-08 | 에스에이치 메테리얼스 코퍼레이션 리미티드 | Lead frame and production method therefor |
| KR102333434B1 (en) * | 2014-08-26 | 2021-11-30 | 오쿠치 마테리얼스 가부시키가이샤 | Lead frame and production method therefor |
| CN104900545A (en) * | 2015-04-27 | 2015-09-09 | 杰群电子科技（东莞）有限公司 | Semiconductor encapsulation method |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130731 Termination date: 20201215 |