CN203085540U

CN203085540U - An image sensor preventing edge from rupturing

Info

Publication number: CN203085540U
Application number: CN 201320016603
Authority: CN
Inventors: 李平
Original assignee: 陆伟
Current assignee: Wuhan Xinxin Semiconductor Manufacturing Co Ltd
Priority date: 2013-01-11
Filing date: 2013-01-11
Publication date: 2013-07-24
Anticipated expiration: 2023-01-11

Abstract

The utility model relates to image sensor manufacture field and specifically relates to an image sensor preventing edge from rupturing. The image sensor comprises a device wafer and a carrier wafer which are bonded together. The edge of the device wafer and the edge of the carrier wafer are wrapped in a glue layer. The bonding edge of the device wafer and the carrier wafer is equipped with a right-angle gap inserted into the carrier wafer. The depth of the right-angle gap inserted into the carrier wafer is less than the thickness of the glue layer. The thickness of the edge of the carrier wafer is from 140 to 160 micrometers. The thickness of the glue layer is from 50 to 70 micrometers. After the image sensor is used, the carrier wafer and the device wafer are firmly bonded together and the thickness of the glue layer is controlled by that of the carrier wafer. The probability of rupture of the wafer edge is decreased and the quality of the image sensor is increased. The glue layer wrapped round the edge of the device wafer and the carrier wafer is capable of effectively preventing a problem of the rupture of the wafer edge.

Description

A kind of image sensor that prevents edge break

Technical field

The utility model relates to image sensor and makes the field, is specifically related to a kind of image sensor that prevents edge break.

Background technology

Before the backside illuminated image sensor package, need and will grind slide glass, have very serious breaking on the border of wafer easily in the process of lapping, influence the image sensor quality, cause the low problem of image sensor yields.

The utility model content

Technical problem to be solved in the utility model provides a kind of image sensor that prevents edge break and solves in the prior art image sensor edge and easily break and cause the low problem of image sensor yields.

The technical scheme that the utility model solves the problems of the technologies described above is as follows: a kind of image sensor that prevents edge break, comprise device wafers and slide glass wafer, described device wafers and slide glass wafer bonding are together, described device wafers edge and slide glass crystal round fringes are enclosed with glue-line, described device wafers and slide glass wafer bonding edge are provided with the right angle breach that extends in the slide glass wafer, the described thickness that gos deep into the notch depth of right angle breach in the slide glass wafer less than glue-line

The beneficial effects of the utility model are: after using this novel, by being wrapped in the glue-line of crystal round fringes and slide glass crystal round fringes, and the thickness of glue-line can effectively prevent the problem that crystal round fringes breaks greater than the rectangle groove depth that deburring cuts out.

On the basis of technique scheme, the utility model can also be done following improvement.

Further, the thickness of described slide glass crystal round fringes is 140 microns to 160 microns;

Further, the thickness of described glue-line is 50 microns to 70 microns.

Adopt the beneficial effect of above-mentioned further scheme to be: to control the thickness of glue-line by the thickness of slide glass wafer, reduce the probability that crystal round fringes breaks, further improve the quality of image sensor.

Further, be provided with one deck bonding oxide skin(coating) between described slide glass wafer and the device wafers.

Adopt the beneficial effect of above-mentioned further scheme to be: can make firm being bonded together of slide glass wafer and device wafers, further improve the quality of image sensor.

Description of drawings

Fig. 1 grinds pre-structure figure for the utility model;

Fig. 2 grinds the back structure chart for the utility model.

In the accompanying drawing, the parts of each label representative are as follows:

1, slide glass wafer, 2, device wafers, 3, glue-line, 4, the right angle breach, 5, notch depth, 6, the bonding oxide skin(coating).

Embodiment

Below in conjunction with accompanying drawing principle of the present utility model and feature are described, institute gives an actual example and only is used to explain the utility model, is not to be used to limit scope of the present utility model.

As shown in Figure 1, for the utility model grinds pre-structure figure, comprise device wafers 2 and slide glass wafer 1, described device wafers 2 is bonded together with slide glass wafer 1, described device wafers 2 edges and slide glass wafer 1 edge are enclosed with glue-line 3, described device wafers 2 and slide glass wafer 1 bonding edge are provided with along the device wafers surface direction and extend right angle breach 4 in the slide glass wafer 2, and the notch depth 5 of described right angle breach is less than the thickness of glue-line 3.

Fig. 2 is for grinding the back structure chart for the utility model, comprise device wafers 2 and slide glass wafer 1, described device wafers 2 is bonded together with slide glass wafer 1, described device wafers 2 edges and slide glass wafer 1 edge are enclosed with glue-line 3, described device wafers 2 and slide glass wafer 1 bonding edge are provided with along the device wafers surface direction and extend right angle breach 4 in the slide glass wafer 2, the notch depth 5 of described right angle breach is less than the thickness of glue-line 3, and the thickness of described slide glass wafer 1 is 140 microns to 160 microns.

The thickness of described glue-line 3 is 50 microns to 70 microns, is provided with one deck bonding oxide skin(coating) 6 between described slide glass wafer 1 and the device wafers 2, and the thickness of described slide glass wafer 1 is 140 microns to 160 microns.

The above only is preferred embodiment of the present utility model, and is in order to restriction the utility model, not all within spirit of the present utility model and principle, any modification of being done, is equal to replacement, improvement etc., all should be included within the protection range of the present utility model.

Claims

1. image sensor that prevents edge break, it is characterized in that: comprise device wafers and slide glass wafer, described device wafers and slide glass wafer bonding are together, described device wafers edge and slide glass crystal round fringes are enclosed with glue-line, described device wafers and slide glass wafer bonding edge are provided with the right angle breach that extends in the slide glass wafer, the described thickness that gos deep into the notch depth of right angle breach in the slide glass wafer less than glue-line.

2. a kind of image sensor that prevents edge break according to claim 1 is characterized in that: be provided with one deck bonding oxide skin(coating) between described slide glass wafer and the device wafers.

3. a kind of image sensor that prevents edge break according to claim 1 and 2 is characterized in that: the thickness of described glue-line is 50 microns to 70 microns.

4. a kind of image sensor that prevents edge break according to claim 1 and 2 is characterized in that: the thickness of described slide glass wafer is 140 microns to 160 microns.