CN203071398U - Liquid cooling narrow-spectrum high-power semiconductor laser stack - Google Patents

Liquid cooling narrow-spectrum high-power semiconductor laser stack Download PDF

Info

Publication number
CN203071398U
CN203071398U CN 201220747369 CN201220747369U CN203071398U CN 203071398 U CN203071398 U CN 203071398U CN 201220747369 CN201220747369 CN 201220747369 CN 201220747369 U CN201220747369 U CN 201220747369U CN 203071398 U CN203071398 U CN 203071398U
Authority
CN
China
Prior art keywords
stack
semiconductor laser
liquid
bar
bars
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN 201220747369
Other languages
Chinese (zh)
Inventor
刘兴胜
康利军
吴迪
王警卫
戴晔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Focuslight Technologies Inc
Original Assignee
Xian Focuslight Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Focuslight Technology Co Ltd filed Critical Xian Focuslight Technology Co Ltd
Priority to CN 201220747369 priority Critical patent/CN203071398U/en
Application granted granted Critical
Publication of CN203071398U publication Critical patent/CN203071398U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本实用新型涉及一种液体制冷的窄光谱高功率半导体激光器叠阵,由多个半导体激光器巴条层叠组成,各个巴条通过串联、并联或串并联结合的方式进行电连接;该液体制冷的窄光谱高功率半导体激光器叠阵的液体制冷回路为双进双出,即在叠阵两端各设置一个入液口和一个出液口;组成叠阵的巴条中,中心波长较大的巴条置于叠阵边缘区域,中心波长较小的巴条置于叠阵中部,以使巴条波长与区域温度相匹配。该实用新型具有很好地光谱窄化效果。

The utility model relates to a liquid-refrigerated narrow-spectrum high-power semiconductor laser array, which is composed of a plurality of semiconductor laser bars stacked, and each bar is electrically connected in series, parallel or series-parallel combination; The liquid refrigeration circuit of the spectral high-power semiconductor laser stack is double-input and double-outlet, that is, one liquid inlet and one liquid outlet are set at both ends of the stack; among the bars forming the stack, the bar with the larger central wavelength Placed in the edge area of the stack, the bars with smaller central wavelengths are placed in the middle of the stack, so that the wavelength of the bars matches the temperature of the area. The utility model has a good spectral narrowing effect.

Description

液体制冷的窄光谱高功率半导体激光器叠阵Liquid-cooled Narrow Spectrum High Power Diode Laser Stack

技术领域technical field

本实用新型属于半导体激光器制造领域,涉及一种液体制冷的窄光谱高功率半导体激光器叠阵.The utility model belongs to the field of semiconductor laser manufacturing and relates to a stack of liquid-cooled narrow-spectrum high-power semiconductor lasers.

背景技术Background technique

随着半导体激光器输出功率、转换效率和性能稳定性的不断提高,大功率半导体激光器及其泵浦的固体激光器及光纤激光器在工业、先进制造业、军事、航空航天、医疗、显示、娱乐中的应用越来越向高层次和高精密方向发展,尤其是激光器与计算机数控技术相结合后构成的高效自动化加工设备,已经成为先进制造业发展的新动力,具有巨大的市场前景。为了提高输出功率,通常将多个半导体激光器巴条组成叠阵的形式,其输出功率可以达到几千瓦到上万瓦。大功率半导体激光器叠阵,广泛应用于军事国防领域、激光加工工业中,也可用于固体激光器及光纤激光器的泵浦源、激光点火、激光打孔、激光切割、激光打标和激光热处理等技术中。With the continuous improvement of semiconductor laser output power, conversion efficiency and performance stability, high-power semiconductor lasers and their pumped solid-state lasers and fiber lasers are used in industry, advanced manufacturing, military, aerospace, medical, display, and entertainment. The application is becoming more and more high-level and high-precision, especially the high-efficiency automatic processing equipment formed by the combination of laser and computer numerical control technology, which has become a new driving force for the development of advanced manufacturing industry and has a huge market prospect. In order to increase the output power, multiple semiconductor laser bars are usually formed into an array, and the output power can reach several kilowatts to tens of thousands of watts. High-power semiconductor laser arrays are widely used in military defense and laser processing industries, and can also be used for pumping sources of solid-state lasers and fiber lasers, laser ignition, laser drilling, laser cutting, laser marking, and laser heat treatment. middle.

半导体激光器叠阵在很多应用中,例如固体激光器泵浦等,需要较窄的光谱宽度,但是半导体激光器叠阵由几十个巴条组成,各巴条的光谱中心波长不一致,因此最终叠阵总的光谱会有明显的展宽。目前已有的研究中大多集中于半导体激光器巴条的光谱窄化。近年来国内外已经有一些关于大功率半导体激光器阵列的光谱展宽机理的研究,导致半导体激光器阵列光谱展宽主要有下述原因:(Xingsheng Liu等,Proceedings of 58th Electronic Componentsand Technology Conference(ECTC),pp.1005-1010,2008.)In many applications, semiconductor laser stacks, such as solid-state laser pumping, etc., require a narrow spectral width, but semiconductor laser stacks are composed of dozens of bars, and the spectral center wavelengths of each bar are inconsistent, so the final stack total The spectrum will be significantly broadened. Most of the existing research focuses on the spectral narrowing of semiconductor laser bars. In recent years, there have been some studies on the spectrum broadening mechanism of high-power semiconductor laser arrays at home and abroad, and the main reasons for the spectral broadening of semiconductor laser arrays are as follows: (Xingsheng Liu et al., Proceedings of 58th Electronic Components and Technology Conference (ECTC), pp. 1005-1010, 2008.)

(1)构成半导体激光器阵列芯片的各个发光点成分或结构不均匀,导致各发光点的波长不一致,从而使光谱发生一定程度的展宽。(1) The composition or structure of each light-emitting point constituting the semiconductor laser array chip is not uniform, resulting in inconsistent wavelengths of each light-emitting point, thereby broadening the spectrum to a certain extent.

(2)高功率半导体激光器的热效应导致各发光点温度不一致,根据半导体激光器的波长随温度变化关系(波长随温度变化速率通常为0.3-0.4nm/K),各发光点的中心波长发生变化,因此导致光谱展宽。热效应导致光谱展宽具体可以分两种情况:(a)理想情况下贴片层不存在空洞时,大功率半导体激光器阵列工作过程中会散发出大量的热,半导体激光器中心区域的发光点和边缘区域的发光点温度不一致,从而导致各发光点中心波长不相同,光谱发生展宽;(b)在半导体激光器封装过程中贴片层不可避免地会产生很小的空洞,在工作过程中由于电流过大,焊料容易发生电迁移及电热迁移。较大的空洞会使半导体激光器阵列发光点附近的局部温度显著升高,导致局部发光点的波长红移,因此总的光谱发生展宽。(2) The thermal effect of the high-power semiconductor laser causes the temperature of each light-emitting point to be inconsistent. According to the relationship between the wavelength of the semiconductor laser and the temperature change (the rate of wavelength change with temperature is usually 0.3-0.4nm/K), the central wavelength of each light-emitting point changes. This results in spectral broadening. Spectral broadening caused by thermal effects can be divided into two specific cases: (a) Ideally, when there is no cavity in the patch layer, a large amount of heat will be emitted during the operation of the high-power semiconductor laser array, and the light-emitting point and edge area of the semiconductor laser center area The temperature of the luminous point is inconsistent, resulting in different central wavelengths of each luminous point, and the spectrum is broadened; (b) In the packaging process of semiconductor lasers, there will inevitably be small holes in the patch layer. , Solder is prone to electromigration and electrothermal migration. Larger holes will significantly increase the local temperature near the luminous point of the semiconductor laser array, resulting in a red shift of the wavelength of the local luminous point, so the overall spectrum is broadened.

(3)封装过程中产生的应力不均匀导致光谱展宽。为了得到较高的转换效率和较高的连续波功率,激光器阵列通常使用电导率和热导率好的铜作为热沉。由于半导体激光器和铜热沉的热膨胀系数(CTE)不匹配,这会在封装之后在激光器二极管阵列上不可避免地产生应力。研究发现,由于应力不均匀导致的激光器阵列波长漂移可达7meV,最终导致激光器阵列的光谱展宽。(3) Stress inhomogeneity generated during the packaging process leads to spectral broadening. In order to obtain higher conversion efficiency and higher continuous wave power, laser arrays usually use copper with good electrical and thermal conductivity as heat sinks. This inevitably creates stress on the laser diode array after packaging due to the mismatch in the coefficient of thermal expansion (CTE) of the semiconductor laser and the copper heat sink. The study found that the wavelength shift of the laser array due to stress inhomogeneity can reach 7meV, which eventually leads to spectral broadening of the laser array.

由于组成叠阵的各个巴条光谱不一致,最终叠阵的光谱会发生明显的展宽。因此为了解决这一问题,需要通过优化叠阵结构设计,达到制备窄光谱半导体激光器叠阵的效果。Due to the inconsistency of the spectra of the individual bars that make up the stack, the spectrum of the final stack will be significantly broadened. Therefore, in order to solve this problem, it is necessary to optimize the stack structure design to achieve the effect of preparing a narrow-spectrum semiconductor laser stack.

实用新型内容Utility model content

本实用新型的目的在于提供一种窄光谱高功率半导体激光器叠阵及其制备方法,具有方法简单、便于操作、成本低的优点。The purpose of the utility model is to provide a narrow-spectrum high-power semiconductor laser stack and a preparation method thereof, which have the advantages of simple method, convenient operation and low cost.

本实用新型的目的是通过以下技术方案来实现的:The purpose of this utility model is achieved through the following technical solutions:

一种窄光谱高功率半导体激光器叠阵的制备方法,包括以下步骤:A preparation method of a narrow-spectrum high-power semiconductor laser stack, comprising the following steps:

(1)依据半导体激光器叠阵的制冷方式对半导体激光器叠阵进行模拟实验,得出组成叠阵的各个放置巴条区域的温度分布情况;(1) According to the cooling method of the semiconductor laser stack, the simulation experiment is carried out on the semiconductor laser stack, and the temperature distribution of each bar area forming the stack is obtained;

(2)测量每一个巴条的光谱,得出每一个巴条的中心波长;(2) Measure the spectrum of each bar to obtain the center wavelength of each bar;

(3)将中心波长较大的巴条置于步骤(1)中模拟出的温度较低的区域,将中心波长较小的巴条置于叠阵温度较高的区域,使巴条波长与区域温度相匹配;(3) Place the bar with a larger central wavelength in the area with a lower temperature simulated in step (1), and place the bar with a smaller central wavelength in an area with a higher temperature in the stack, so that the wavelength of the bar is the same as zone temperature matching;

(4)组装叠阵,达到组成叠阵的巴条波长一致输出,即为高功率窄光谱半导体激光器叠阵。(4) Assemble the array to achieve the consistent output of the wavelengths of the bars forming the array, which is a stack of high-power narrow-spectrum semiconductor lasers.

基于以上原理,制备了以下1)、2)两种液体制冷半导体激光器叠阵,这两种液体制冷半导体激光器叠阵均由多个半导体激光器巴条层叠组成,各个巴条通过串联、并联或串并联结合的方式进行电连接;Based on the above principles, the following 1) and 2) two types of liquid-cooled semiconductor laser stacks are prepared. These two liquid-cooled semiconductor laser stacks are composed of multiple semiconductor laser bars stacked. Each bar is connected in series, in parallel or in series. Electrically connected in parallel combination;

1)液体制冷回路为双进双出,即在叠阵两端各设置一个入液口和一个出液口。对于这种液体制冷半导体激光器叠阵,通过实验和模拟得出:组成叠阵的各个放置巴条区域的温度对称分布,叠阵中部温度高,叠阵两侧边缘区域温度低。将中心波长较大的巴条置于叠阵边缘区域,中心波长较小的巴条置于叠阵中部的组装模式,使巴条波长与区域温度相匹配,所组装的叠阵输出光谱较窄。1) The liquid refrigeration circuit is double-inlet and double-outlet, that is, one liquid inlet and one liquid outlet are set at both ends of the array. For this liquid-cooled semiconductor laser stack, it is obtained through experiments and simulations that the temperature distribution of each bar area forming the stack is symmetrical, the temperature in the middle of the stack is high, and the temperature at the edge areas on both sides of the stack is low. Place the bar with the larger central wavelength in the edge area of the stack, and the bar with the smaller central wavelength in the middle of the stack, so that the wavelength of the bar matches the temperature of the area, and the output spectrum of the assembled stack is narrow .

2)液冷通道为单向直线型的液体制冷半导体激光器叠阵,即在叠阵一端设置入液口,另一端设置出液口。对于这种液体制冷半导体激光器叠阵,通过实验和模拟得出:位于液体入口处的区域温度较低,远离液体入口处,沿着液体流动方向,相应的巴条区域温度逐渐增加;将组成叠阵的各巴条,按照其中心波长从大到小,依次置于自入液口至出液口的各段区域,即:将中心波长较大的巴条置于靠近叠阵入液口的区域,将中心波长适中的巴条设置在叠阵中部,将中心波长较小的巴条设置在靠近出液口的区域,使巴条波长与区域温度相匹配,叠阵的输出光谱较窄。2) The liquid cooling channel is a unidirectional linear liquid-cooled semiconductor laser stack, that is, a liquid inlet is set at one end of the stack, and a liquid outlet is set at the other end. For this liquid-cooled semiconductor laser stack, it is obtained through experiments and simulations that the temperature of the area located at the liquid inlet is relatively low, and away from the liquid inlet, along the direction of liquid flow, the temperature of the corresponding bar area gradually increases; Each bar of the array is placed in sequence from the liquid inlet to the liquid outlet according to its central wavelength from large to small, that is, the bar with the larger central wavelength is placed near the liquid inlet of the array. In the region, the bar with a moderate center wavelength is set in the middle of the stack, and the bar with a smaller center wavelength is set in the area close to the liquid outlet, so that the wavelength of the bar matches the temperature of the area, and the output spectrum of the stack is narrow.

本实用新型具有以下有益效果:The utility model has the following beneficial effects:

1、本实用新型具有很好地光谱窄化效果,采用本实用新型方法制备的半导体激光器叠阵光谱宽度能够降低30%左右。1. The utility model has a good spectrum narrowing effect, and the spectral width of the stack of semiconductor lasers prepared by the method of the utility model can be reduced by about 30%.

2、本实用新型工艺较为简单,成本低。2. The process of the utility model is relatively simple and the cost is low.

附图说明Description of drawings

图1为本实用新型技术方案示意图;Fig. 1 is a schematic diagram of the technical solution of the utility model;

图2为依据本实用新型原理制备的双进双出式液体制冷叠阵结构示意图;Fig. 2 is a schematic structural diagram of a double-input double-outlet liquid refrigeration stack prepared according to the principle of the utility model;

图3为20个巴条组成的双进双出式半导体激光器叠阵的温度分布;Fig. 3 is the temperature distribution of the double-input and double-out semiconductor laser stack formed by 20 bars;

图4为本实用新型制备的由20个巴条组成的975nm峰值功率5000W双进双出式半导体激光器叠阵光谱测试结果;Fig. 4 is the 975nm peak power 5000W double-input double-out type semiconductor laser stacked spectrum test result that is made up of 20 bars prepared by the utility model;

图5为依据本实用新型原理制备的单向直线型液体制冷叠阵结构示意图;Fig. 5 is a schematic diagram of the structure of a one-way linear liquid refrigeration stack prepared according to the principle of the utility model;

图6为60个巴条组成的单向直线型半导体激光器叠阵的温度分布;Fig. 6 is the temperature distribution of the unidirectional linear semiconductor laser stack formed by 60 bars;

图7为由60个巴条组成的808nm峰值功率18kW直通型半导体激光器叠阵光谱测试结果。Figure 7 shows the spectrum test results of the 808nm peak power 18kW through-type semiconductor laser stack composed of 60 bars.

图中,1为入液口,2为出液口,3为半导体激光器巴条。Among the figure, 1 is a liquid inlet, 2 is a liquid outlet, and 3 is a semiconductor laser bar.

具体实施方式Detailed ways

下面结合附图和实施例详细叙述本实用新型的技术方案:Describe the technical scheme of the utility model in detail below in conjunction with accompanying drawing and embodiment:

如图1所示,按模拟的温度分布,波长排布随温度的升高而减小。As shown in Figure 1, according to the simulated temperature distribution, the wavelength distribution decreases with the increase of temperature.

首先通过模拟及实验得到组成叠阵的各个巴条的温度分布情况;然后测量各个巴条的光谱,得到各个巴条的中心波长;半导体激光器巴条的中心波长会随温度升高发生红移,温度降低发生蓝移,在组装叠阵时将中心波长较大的巴条组装在温度较低的区域(叠阵边缘区域),将中心波长较小的巴条组装在温度较高的区域(叠阵中间区域)。最终使各个巴条的中心波长趋向一致,从而使总的光谱宽度窄化。First, the temperature distribution of each bar forming the stack is obtained through simulation and experiment; then the spectrum of each bar is measured to obtain the central wavelength of each bar; the central wavelength of the semiconductor laser bar will red-shift with the increase of temperature, When the temperature decreases, a blue shift occurs. When assembling the stack, the bars with a larger central wavelength are assembled in the lower temperature area (the stack edge area), and the bars with a smaller central wavelength are assembled in the higher temperature area (stack edge area). array middle area). Finally, the central wavelength of each bar tends to be consistent, so that the total spectral width is narrowed.

对于双进双出式液体制冷半导体激光器叠阵,通过实验和模拟证实(如图3所示):得出组成叠阵的各个放置巴条区域的温度对称分布,叠阵中部温度高,叠阵两侧边缘区域温度低。将中心波长较大的巴条置于叠阵边缘区域,中心波长较小的巴条置于叠阵中间的组装模式,使巴条波长与区域温度相匹配,所组装的叠阵输出光谱较窄。For the stack of double-input and double-out liquid-cooled semiconductor lasers, it is confirmed by experiments and simulations (as shown in Figure 3): the temperature distribution of each bar area forming the stack is symmetrical, the temperature in the middle of the stack is high, and the temperature of the stack is high. The temperature of the edge area on both sides is low. Place the bar with the larger central wavelength in the edge area of the stack, and the bar with the smaller central wavelength in the middle of the stack, so that the wavelength of the bar matches the temperature of the area, and the output spectrum of the assembled stack is narrow .

如图2、4所示,利用本实用新型技术方案制备了由20个巴条组成的975nm峰值功率5000W叠阵半导体激光器,其光谱半高全宽FWHM(Full width at halfmaximum)为3.11nm,90%能量光谱宽度仅4.15nm。As shown in Figures 2 and 4, a 975nm peak power 5000W stacked semiconductor laser composed of 20 bars has been prepared by using the technical solution of the utility model. The spectral width is only 4.15nm.

对于单向直线型液体制冷半导体激光器叠阵,通过实验和模拟证实(如图6所示):得出位于液体入口处的区域温度较低,远离液体入口处,沿着液体流动方向,相应的巴条区域温度逐渐增加;因此采用将中心波长较大的巴条置于叠阵入口处边缘区域,将中心波长较小的巴条置于叠阵液体出口之间的组装模式,使巴条波长与区域温度相匹配。For the unidirectional linear liquid-cooled semiconductor laser stack, it is confirmed by experiments and simulations (as shown in Figure 6): it is concluded that the temperature of the area located at the liquid inlet is lower, away from the liquid inlet, along the direction of liquid flow, the corresponding The temperature in the bar area increases gradually; therefore, the bar with the larger central wavelength is placed in the edge area of the stack entrance, and the bar with the smaller central wavelength is placed between the liquid outlets of the stack. Match the zone temperature.

如图5、7所示,利用本实用新型技术方案制备了由60个巴条组成的808nm峰值功率18kW叠阵半导体激光器,其光谱半高全宽FWHM为2.80nm,90%能量宽度为4.26nm。As shown in Figures 5 and 7, an 808nm peak power 18kW stacked semiconductor laser composed of 60 bars was prepared by using the technical solution of the utility model. Its spectral full width at half maximum (FWHM) is 2.80nm, and its 90% energy width is 4.26nm.

从上述实施例可以看出,采用本实用新型获得了很好的窄化光谱的效果,具有很强的实用性。It can be seen from the above embodiments that the utility model has a good effect of narrowing the spectrum and has strong practicability.

Claims (2)

1.一种液体制冷的窄光谱高功率半导体激光器叠阵,由多个半导体激光器巴条层叠组成,各个巴条通过串联、并联或串并联结合的方式进行电连接;该液体制冷的窄光谱高功率半导体激光器叠阵的液体制冷回路为双进双出,即在叠阵两端各设置一个入液口和一个出液口;组成叠阵的巴条中,中心波长较大的巴条置于叠阵边缘区域,中心波长较小的巴条置于叠阵中部,以使巴条波长与区域温度相匹配。1. A liquid-cooled narrow-spectrum high-power semiconductor laser array, which is composed of a plurality of semiconductor laser bars stacked, and each bar is electrically connected in series, parallel or a combination of series and parallel; the liquid-cooled narrow-spectrum high-power The liquid cooling circuit of the power semiconductor laser stack is double-input and double-out, that is, one liquid inlet and one liquid outlet are arranged at both ends of the stack; among the bars forming the stack, the bar with the larger central wavelength is placed in the In the edge area of the stack, the bars with smaller central wavelengths are placed in the middle of the stack, so that the wavelength of the bars matches the temperature of the area. 2.一种液体制冷的窄光谱高功率半导体激光器叠阵,由多个半导体激光器巴条层叠组成,各个巴条通过串联、并联或串并联结合的方式进行电连接;该液体制冷的窄光谱高功率半导体激光器叠阵的液冷通道为单向直线型的液体制冷半导体激光器叠阵,即在叠阵一端设置入液口,另一端设置出液口;组成叠阵的各巴条,按照其中心波长从大到小,依次置于自入液口至出液口的各段区域,以使巴条波长与区域温度相匹配。2. A liquid-cooled narrow-spectrum high-power semiconductor laser array, which is composed of a plurality of semiconductor laser bars stacked, and each bar is electrically connected in series, parallel or a combination of series and parallel; the liquid-cooled narrow-spectrum high-power The liquid cooling channel of the power semiconductor laser stack is a one-way linear liquid-cooled semiconductor laser stack, that is, a liquid inlet is set at one end of the stack, and a liquid outlet is set at the other end; The wavelengths are from large to small, and placed in each section from the liquid inlet to the liquid outlet in order to match the wavelength of the bar with the temperature of the area.
CN 201220747369 2012-12-28 2012-12-28 Liquid cooling narrow-spectrum high-power semiconductor laser stack Expired - Lifetime CN203071398U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220747369 CN203071398U (en) 2012-12-28 2012-12-28 Liquid cooling narrow-spectrum high-power semiconductor laser stack

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220747369 CN203071398U (en) 2012-12-28 2012-12-28 Liquid cooling narrow-spectrum high-power semiconductor laser stack

Publications (1)

Publication Number Publication Date
CN203071398U true CN203071398U (en) 2013-07-17

Family

ID=48770150

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201220747369 Expired - Lifetime CN203071398U (en) 2012-12-28 2012-12-28 Liquid cooling narrow-spectrum high-power semiconductor laser stack

Country Status (1)

Country Link
CN (1) CN203071398U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103078254A (en) * 2012-12-28 2013-05-01 西安炬光科技有限公司 Narrow-spectrum high-power semiconductor laser stack and preparation method thereof
CN111370991A (en) * 2019-12-23 2020-07-03 深圳活力激光技术有限公司 Semiconductor laser, stacked array and horizontal array of insulating type heat sink
CN111740310A (en) * 2020-07-10 2020-10-02 西安立芯光电科技有限公司 Method for realizing no mode jump in semiconductor laser chip lock wave

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103078254A (en) * 2012-12-28 2013-05-01 西安炬光科技有限公司 Narrow-spectrum high-power semiconductor laser stack and preparation method thereof
CN111370991A (en) * 2019-12-23 2020-07-03 深圳活力激光技术有限公司 Semiconductor laser, stacked array and horizontal array of insulating type heat sink
CN111740310A (en) * 2020-07-10 2020-10-02 西安立芯光电科技有限公司 Method for realizing no mode jump in semiconductor laser chip lock wave
CN111740310B (en) * 2020-07-10 2021-10-22 西安立芯光电科技有限公司 Method for realizing no mode jump in semiconductor laser chip lock wave

Similar Documents

Publication Publication Date Title
CN107768334B (en) Bifurcated channel radiator based on vein topological structure
CN210693012U (en) Cooling structure of heat sink and laser
CN101640379B (en) Novel low-cost stack-up array liquid refrigeration semiconductor laser and manufacturing method thereof
CN101841127B (en) Horizontal array high-power semiconductor laser capable of replacing chip
CN104993740B (en) A kind of segmented thermoelectric generator construction design method
CN103779782B (en) A kind of high-average power diode-pumped nd yag laser module and preparation method thereof
CN102570291B (en) Conduction cooling type high-power semiconductor laser and preparation method thereof
WO2011022923A1 (en) Cooling module for laser, manufacture method thereof and semiconductor laser including the same
CN105470810B (en) A kind of macro channel liquid cooling high-power semiconductor laser and device
CN203071398U (en) Liquid cooling narrow-spectrum high-power semiconductor laser stack
CN104242048A (en) Packaging structure of conduction-cooled stack semiconductor laser
Jing et al. Design and simulation of a novel high-efficiency cooling heat-sink structure using fluid-thermodynamics
CN207338899U (en) A kind of semiconductor laser array encapsulating structure
CN201927886U (en) Horizontal array large-power semiconductor laser with substitutable chip
CN101640378B (en) Novel low-cost horizontal array liquid refrigeration semiconductor laser and manufacturing method thereof
CN105261930A (en) Semiconductor laser micro channel cooling heat sink
CN105048287A (en) Horizontal-array high-power semiconductor laser
CN108666869A (en) A kind of feux rouges high power laser module and its assemble method
CN110911953A (en) Water-cooling semiconductor light source side pump solid laser module
CN104269736B (en) High power semiconductor laser of conduction cooling laminated array
CN101387389A (en) Method for manufacture of LED lamp radiator
CN204760737U (en) Forced air cooling ultraviolet laser
CN103078254A (en) Narrow-spectrum high-power semiconductor laser stack and preparation method thereof
CN202103309U (en) Combined high-power semiconductor laser side pumping source
Lee et al. Numerical study on the heat dissipation characteristics of high-power LED module

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CP03 Change of name, title or address

Address after: 710077 Xi'an hi tech Zone 56, Xi'an, Shaanxi Province, No. 56

Patentee after: Focuslight Technologies Inc.

Address before: 710119 Third Floor, Building 10, 17 Information Avenue, New Industrial Park, Xi'an High-tech Zone, Shaanxi Province

Patentee before: XI'AN FOCUSLIGHT TECHNOLOGIES Co.,Ltd.

CP03 Change of name, title or address
CX01 Expiry of patent term

Granted publication date: 20130717

CX01 Expiry of patent term