CN203071398U - Liquid cooling narrow-spectrum high-power semiconductor laser stack - Google Patents
Liquid cooling narrow-spectrum high-power semiconductor laser stack Download PDFInfo
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- CN203071398U CN203071398U CN 201220747369 CN201220747369U CN203071398U CN 203071398 U CN203071398 U CN 203071398U CN 201220747369 CN201220747369 CN 201220747369 CN 201220747369 U CN201220747369 U CN 201220747369U CN 203071398 U CN203071398 U CN 203071398U
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Abstract
The utility model relates to a liquid cooling narrow-spectrum high-power semiconductor laser stack. The semiconductor laser stack comprises a plurality of stacked semiconductor laser bars, wherein the bars are electrically connected in a series manner, in a parallel manner or in a series-parallel manner; the liquid cooling narrow-spectrum high-power semiconductor laser stack has a double-in double-out liquid cooling loop, i.e. both two ends of the stack is provided with a liquid inlet and a liquid outlet; and in the bars forming the stack, the bars with relatively large central wavelengths are arranged in edge areas of the stack, and the bars with relatively small central wavelengths are arranged in the center of the stack, such that the wavelengths of the bars match with the temperature of the areas. The liquid cooling narrow-spectrum high-power semiconductor laser stack has a good spectrum narrowing effect.
Description
Technical field
The utility model belongs to semiconductor laser and makes the field, relates to a kind of folded battle array of narrow spectrum high-power semiconductor laser of liquid refrigerating.
Background technology
Along with improving constantly of semiconductor laser power output, conversion efficiency and stability, the application in industry, advanced manufacturing industry, military affairs, Aero-Space, medical treatment, demonstration, amusement of the solid state laser of high power semiconductor lasers and pumping thereof and fiber laser more and more develops to high-level and high-accuracy direction, especially the high-efficient automatic process equipment that constitutes after laser combines with computer numerical control technology, become the new power of advanced manufacturing industry development, had huge market prospects.In order to improve power output, usually a plurality of semiconductor laser bar bars are formed the form of folded battle array, its power output can reach several kilowatts to last myriawatt.The folded battle array of high power semiconductor lasers, be widely used in also can be used in the technology such as pumping source, laser ignition, laser drilling, laser cutting, laser marking and LASER HEAT TREATMENT of solid state laser and fiber laser in military and national defense field, the laser processing industry.
The folded battle array of semiconductor laser is in a lot of the application, for example solid state laser pumping etc. needs narrower spectral width, but the folded battle array of semiconductor laser is made up of tens bar bars, it is inconsistent that each clings to the spectral centroid wavelength of bar, and therefore the total spectrum of final folded battle array has tangible broadening.Concentrate on the spectrum narrowing of semiconductor laser bar bar in the present existing research mostly.Some have been arranged about the research of the spectrum widening mechanism of large power semiconductor laser array both at home and abroad in recent years, cause the semiconductor laser array spectrum widening to mainly contain following reason: (Xingsheng Liu etc., Proceedings of 58th Electronic Componentsand Technology Conference (ECTC), pp.1005-1010,2008.)
(1) each luminous point composition or the structure of formation laser array chips are inhomogeneous, cause the wavelength of each luminous point inconsistent, thereby make spectrum generation broadening to a certain degree.
(2) it is inconsistent that the thermal effect of high-power semiconductor laser causes each luminous point temperature, wavelength according to semiconductor laser varies with temperature relation (wavelength varies with temperature speed and is generally 0.3-0.4nm/K), the centre wavelength of each luminous point changes, and therefore causes spectrum widening.Thermal effect causes the spectrum widening specifically can be in two kinds of situation: when (a) ideally there is not the cavity in patch layer, can give out a large amount of heat in the large power semiconductor laser array course of work, the luminous point temperature of the luminous point of semiconductor laser central area and fringe region is inconsistent, thereby cause each luminous point centre wavelength inequality, spectrum generation broadening; (b) patch layer can produce very little cavity inevitably in the semiconductor laser encapsulation process, and in the course of the work because electric current is excessive, electromigration and electric heating migration take place scolder easily.Bigger cavity can make near the local temperature the semiconductor laser array luminous point significantly raise, and causes the red shift of wavelength of local luminous point, therefore total spectrum generation broadening.
(3) the even spectrum widening that causes of the unbalanced stress that produces in the encapsulation process.In order to obtain high conversion rate and higher continuous wave power, laser array uses the good copper of conductivity and thermal conductivity as heat sink usually.Because semiconductor laser and the heat sink thermal coefficient of expansion (CTE) of copper do not match, this can produce stress inevitably on the laser diode array after encapsulation.Discover, because the even laser array wave length shift that causes of unbalanced stress can reach 7meV, finally cause the spectrum widening of laser array.
Because it is inconsistent to form each bar bar spectrum of folded battle array, tangible broadening can take place in the spectrum of final folded battle array.Therefore in order to address this problem, need to reach the effect of the folded battle array of the narrow spectrum semiconductor laser of preparation by optimizing folded battle array structural design.
The utility model content
The purpose of this utility model is to provide folded battle array of a kind of narrow spectrum high-power semiconductor laser and preparation method thereof, have method simple, be convenient to operate, advantage that cost is low.
The purpose of this utility model is achieved through the following technical solutions:
The preparation method of the folded battle array of a kind of narrow spectrum high-power semiconductor laser may further comprise the steps:
(1) folds battle array according to the refrigeration modes noise spectra of semiconductor lasers of the folded battle array of semiconductor laser and carry out simulated experiment, draw the Temperature Distribution situation in each placement bar bar zone of forming folded battle array;
(2) measure the spectrum that each clings to bar, draw the centre wavelength of each bar bar;
(3) bar bar that centre wavelength is the bigger lower zone of temperature that places step (1) to simulate, the bar bar that centre wavelength is less places the higher zone of folded battle array temperature, and bar bar wavelength and regional temperature are complementary;
(4) the folded battle array of assembling reaches the bar bar consistent wavelength output of forming folded battle array, is the folded battle array of the narrow spectrum semiconductor laser of high power.
Based on above principle, prepared following 1), 2) two kinds of folded battle arrays of liquid refrigeration semiconductor laser, the folded battle array of these two kinds of liquid refrigeration semiconductor lasers is by the stacked composition of a plurality of semiconductor laser bar bars, and each bar bar is electrically connected by the mode of series, parallel or connection in series-parallel combination;
1) the liquid refrigerating loop namely respectively arranges a liquid inlet and a liquid outlet at folded battle array two ends for going with each other all the time.For the folded battle array of this liquid refrigeration semiconductor laser, draw with simulation by experiment: each temperature of placing bar bar zone of forming folded battle array is symmetrically distributed, folded battle array middle part temperature height, and folded battle array both sides of the edge regional temperature is low.The bar bar that centre wavelength is bigger places folded array edge zone, and the less bar bar of centre wavelength places the assembly model at folded battle array middle part, and bar bar wavelength and regional temperature are complementary, and the folded battle array output spectrum of assembling is narrower.
2) the liquid cooling passage is the folded battle array of unidirectional linear liquid refrigeration semiconductor laser, namely at folded battle array one end liquid inlet is set, and the other end arranges liquid outlet.For the folded battle array of this liquid refrigeration semiconductor laser, draw with simulation by experiment: the regional temperature that is positioned at the place, liquid inlet is lower, and away from the place, liquid inlet, along liquid flow direction, clinging to the bar regional temperature accordingly increases gradually; Respectively cling to bar with what form folded battle array, according to its centre wavelength from big to small, place section zone of each to liquid outlet from liquid inlet successively, that is: centre wavelength is bigger bar bar places near the zone of folding the battle array liquid inlet, the bar bar that centre wavelength is moderate is arranged on folded battle array middle part, the bar bar that centre wavelength is less is arranged on the zone near liquid outlet, and bar bar wavelength and regional temperature are complementary, and the output spectrum of folded battle array is narrower.
The utlity model has following beneficial effect:
1, the utlity model has spectrum narrowing effect well, adopt the folded battle array of the semiconductor laser spectral width of the utility model method preparation to reduce about 30%.
2, the utility model technology is comparatively simple, and cost is low.
Description of drawings
Fig. 1 is the technical solutions of the utility model schematic diagram;
Fig. 2 is the folded battle array of the formula that the goes with each other all the time liquid refrigerating structural representation according to the preparation of the utility model principle;
Fig. 3 is the Temperature Distribution of the folded battle array of the formula that goes with each other all the time semiconductor laser of 20 bar bars compositions;
Fig. 4 is the 975nm peak power 5000W that is made up of 20 bar bars of the utility model preparation folded gust of spectrum test result of formula semiconductor laser that go with each other all the time;
Fig. 5 is the folded battle array of the unidirectional linear pattern liquid refrigerating structural representation according to the preparation of the utility model principle;
Fig. 6 is the Temperature Distribution of the folded battle array of unidirectional linear pattern semiconductor laser of 60 bar bars compositions;
Fig. 7 is the folded battle array of the through-type semiconductor laser of the 808nm peak power 18kW spectrum test result who is made up of 60 bar bars.
Among the figure, 1 is liquid inlet, and 2 is liquid outlet, and 3 are semiconductor laser bar bar.
Embodiment
Be described in detail the technical solution of the utility model below in conjunction with drawings and Examples:
As shown in Figure 1, by the Temperature Distribution of simulation, the rising that wavelength is arranged with temperature reduces.
At first obtain forming the Temperature Distribution situation of each bar bar of folding battle array by simulation and experiment; Measure the spectrum of each bar bar then, obtain the centre wavelength of each bar bar; The centre wavelength of semiconductor laser bar bar can raise with temperature red shift takes place, temperature reduces the generation blue shift, the bar bar that centre wavelength is bigger is assembled in the lower zone of temperature (folded array edge zone) when the folded battle array of assembling, and the bar bar that centre wavelength is less is assembled in the higher zone of temperature (folded battle array zone line).Finally make the centre wavelength trend of each bar bar consistent, thereby total spectral width is narrowed.
For the folded battle array of the formula liquid refrigeration semiconductor laser that goes with each other all the time, confirm (as shown in Figure 3) with simulation by experiment: draw each temperature of placing bar bar zone of forming folded battle array and be symmetrically distributed, folded battle array middle part temperature height, folded battle array both sides of the edge regional temperature is low.The bar bar that centre wavelength is bigger places folded array edge zone, and the less bar bar of centre wavelength places the assembly model in the middle of the folded battle array, and bar bar wavelength and regional temperature are complementary, and the folded battle array output spectrum of assembling is narrower.
Shown in Fig. 2,4, utilize technical solutions of the utility model to prepare the folded array semiconductor laser of the 975nm peak power 5000W that is formed by 20 bar bars, its spectrum full width at half maximum FWHM (Full width at halfmaximum) is 3.11nm, and 90% energy spectrum width is 4.15nm only.
For the folded battle array of unidirectional linear pattern liquid refrigeration semiconductor laser, confirm (as shown in Figure 6) with simulation by experiment: it is lower to draw the regional temperature that is positioned at the place, liquid inlet, away from the place, liquid inlet, along liquid flow direction, clinging to the bar regional temperature accordingly increases gradually; Therefore adopt the bar bar that centre wavelength is bigger to place folded battle array porch fringe region, the bar bar that centre wavelength is less places the assembly model between the folded battle array liquid outlet, and bar bar wavelength and regional temperature are complementary.
Shown in Fig. 5,7, utilize technical solutions of the utility model to prepare the folded array semiconductor laser of the 808nm peak power 18kW that is formed by 60 bar bars, its spectrum full width at half maximum FWHM is 2.80nm, 90% energy width is 4.26nm.
From above-described embodiment as can be seen, adopt the utility model to obtain the effect of the spectrum that well narrows, have very strong practicality.
Claims (2)
1. the folded battle array of the narrow spectrum high-power semiconductor laser of a liquid refrigerating, bar is stacked forms by a plurality of semiconductor lasers bar, and each bar bar is electrically connected by the mode of series, parallel or connection in series-parallel combination; The liquid refrigerating loop of the folded battle array of the narrow spectrum high-power semiconductor laser of this liquid refrigerating namely respectively arranges a liquid inlet and a liquid outlet at folded battle array two ends for going with each other all the time; Form in the bar bar of folded battle array, the bar bar that centre wavelength is bigger places folded array edge zone, and the less bar bar of centre wavelength places folded battle array middle part, so that bar bar wavelength and regional temperature are complementary.
2. the folded battle array of the narrow spectrum high-power semiconductor laser of a liquid refrigerating, bar is stacked forms by a plurality of semiconductor lasers bar, and each bar bar is electrically connected by the mode of series, parallel or connection in series-parallel combination; The liquid cooling passage of the folded battle array of the narrow spectrum high-power semiconductor laser of this liquid refrigerating is the folded battle array of unidirectional linear liquid refrigeration semiconductor laser, namely at folded battle array one end liquid inlet is set, and the other end arranges liquid outlet; That forms folded battle array respectively clings to bar, according to its centre wavelength from big to small, places section zone of each to liquid outlet from liquid inlet successively, so that bar bar wavelength and regional temperature are complementary.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220747369 CN203071398U (en) | 2012-12-28 | 2012-12-28 | Liquid cooling narrow-spectrum high-power semiconductor laser stack |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220747369 CN203071398U (en) | 2012-12-28 | 2012-12-28 | Liquid cooling narrow-spectrum high-power semiconductor laser stack |
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| CN203071398U true CN203071398U (en) | 2013-07-17 |
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| CN 201220747369 Expired - Lifetime CN203071398U (en) | 2012-12-28 | 2012-12-28 | Liquid cooling narrow-spectrum high-power semiconductor laser stack |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103078254A (en) * | 2012-12-28 | 2013-05-01 | 西安炬光科技有限公司 | Narrow-spectrum high-power semiconductor laser stack and preparation method thereof |
| CN111370991A (en) * | 2019-12-23 | 2020-07-03 | 深圳活力激光技术有限公司 | Semiconductor laser, stacked array and horizontal array of insulating type heat sink |
| CN111740310A (en) * | 2020-07-10 | 2020-10-02 | 西安立芯光电科技有限公司 | Method for realizing no mode jump in semiconductor laser chip lock wave |
-
2012
- 2012-12-28 CN CN 201220747369 patent/CN203071398U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103078254A (en) * | 2012-12-28 | 2013-05-01 | 西安炬光科技有限公司 | Narrow-spectrum high-power semiconductor laser stack and preparation method thereof |
| CN111370991A (en) * | 2019-12-23 | 2020-07-03 | 深圳活力激光技术有限公司 | Semiconductor laser, stacked array and horizontal array of insulating type heat sink |
| CN111740310A (en) * | 2020-07-10 | 2020-10-02 | 西安立芯光电科技有限公司 | Method for realizing no mode jump in semiconductor laser chip lock wave |
| CN111740310B (en) * | 2020-07-10 | 2021-10-22 | 西安立芯光电科技有限公司 | Method for realizing no mode jump in semiconductor laser chip lock wave |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 710077 Xi'an hi tech Zone 56, Xi'an, Shaanxi Province, No. 56 Patentee after: Focuslight Technologies Inc. Address before: 710119 Third Floor, Building 10, 17 Information Avenue, New Industrial Park, Xi'an High-tech Zone, Shaanxi Province Patentee before: XI'AN FOCUSLIGHT TECHNOLOGIES Co.,Ltd. |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130717 |