CN103078254A - Narrow-spectrum high-power semiconductor laser stack and preparation method thereof - Google Patents
Narrow-spectrum high-power semiconductor laser stack and preparation method thereof Download PDFInfo
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- CN103078254A CN103078254A CN2012105914147A CN201210591414A CN103078254A CN 103078254 A CN103078254 A CN 103078254A CN 2012105914147 A CN2012105914147 A CN 2012105914147A CN 201210591414 A CN201210591414 A CN 201210591414A CN 103078254 A CN103078254 A CN 103078254A
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Abstract
The invention relates to a narrow-spectrum high-power semiconductor laser stack and a preparation method thereof. The preparation method of the narrow-spectrum high-power semiconductor laser stack comprises the steps: conducting simulation experiment on the semiconductor laser stack through a refrigerating manner of the semiconductor laser stack, to obtain the temperature distribution condition of all bar storage areas forming the stack; measuring the spectrum of each bar to obtain the central wavelength of each bar, placing the bar with greater central wavelength in the area with lower simulated temperature, placing the bar with shorter central wavelength in the area with higher stack temperature, so as to enable the wavelength of the bars to be matched with the temperature of the areas; and assembling the stack to achieve consistent wavelength output of bars forming the stack, thereby obtaining the narrow-spectrum high-power semiconductor laser stack. According to the narrow-spectrum high-power semiconductor laser stack and the preparation method thereof, the spectrum narrowing effect is good, the spectrum width of the narrow-spectrum high-power semiconductor laser stack prepared by adopting the method can be reduced by about 30%.
Description
Technical field
The invention belongs to semiconductor laser and make the field, relate to folded battle array of a kind of narrow spectrum high-power semiconductor laser and preparation method thereof.
Background technology
Along with improving constantly of semiconductor laser power output, conversion efficiency and stability, the application in industry, advanced manufacturing industry, military affairs, Aero-Space, medical treatment, demonstration, amusement of the solid state laser of high power semiconductor lasers and pumping thereof and fiber laser is more and more to high-level and high-accuracy future development, especially the laser high-efficient automatic process equipment of rear formation that combines with computer numerical control technology, become the new power of advanced manufacturing industry development, had huge market prospects.In order to improve power output, usually a plurality of semiconductor laser bars are formed the form of folded battle array, its power output can reach several kilowatts to upper myriawatt.The folded battle array of high power semiconductor lasers, be widely used in also can be used in the technology such as pumping source, laser ignition, laser drilling, laser cutting, laser marking and LASER HEAT TREATMENT of solid state laser and fiber laser in military and national defense field, the laser processing industry.
Semiconductor laser stacks is in a lot of the application, such as the solid state laser pumping etc., need narrower spectral width, but semiconductor laser stacks is comprised of tens bar bars, it is inconsistent that each clings to the spectral centroid wavelength of bar, and therefore the total spectrum of final folded battle array has obvious broadening.Mostly concentrate on the spectrum narrowing of semiconductor laser bar in the present existing research.Recent domestic has had some about the spectrum widening research on mechanism of large power semiconductor laser array, cause the semiconductor laser array spectrum widening to mainly contain following reason: (Xingsheng Liu etc., Proceedings of 58th Electronic Components and Technology Conference (ECTC), pp.1005-1010,2008.)
(1) each luminous point composition or the structure of formation laser array chips are inhomogeneous, cause the wavelength of each luminous point inconsistent, thereby make spectrum generation broadening to a certain degree.
(2) it is inconsistent that the thermal effect of high-power semiconductor laser causes each luminous point temperature, wavelength according to semiconductor laser varies with temperature relation (wavelength varies with temperature speed and is generally 0.3-0.4nm/K), the centre wavelength of each luminous point changes, and therefore causes spectrum widening.Thermal effect causes the spectrum widening specifically can be in two kinds of situation: when (a) ideally there is not the cavity in patch layer, can give out a large amount of heat in the large power semiconductor laser array course of work, the luminous point temperature of the luminous point of semiconductor laser central area and fringe region is inconsistent, thereby cause each luminous point centre wavelength not identical, spectrum generation broadening; (b) patch layer can produce very little cavity inevitably in the semiconductor laser encapsulation process, and in the course of the work because electric current is excessive, electromigration and electric heating migration easily occur scolder.Larger cavity can make near the local temperature the semiconductor laser array luminous point significantly raise, and causes the red shift of wavelength of local luminous point, therefore total spectrum generation broadening.
(3) Stress non-homogeneity that produces in the encapsulation process causes spectrum widening.In order to obtain higher conversion efficiency and higher continuous wave power, laser array uses the good copper of conductivity and thermal conductivity as heat sink usually.Because semiconductor laser and the heat sink thermal coefficient of expansion (CTE) of copper do not mate, this can produce stress inevitably on the laser diode array after encapsulation.Research is found, because the laser array wave length shift that Stress non-homogeneity causes can reach 7meV, finally causes the spectrum widening of laser array.
Because it is inconsistent to form each bar bar spectrum of folded battle array, obvious broadening can occur in the spectrum of final folded battle array.Therefore in order to address this problem, need to reach the effect of the narrow spectrum semiconductor laser stacks of preparation by optimizing folded battle array structural design.
Summary of the invention
The object of the present invention is to provide folded battle array of a kind of narrow spectrum high-power semiconductor laser and preparation method thereof, have advantages of that method is simple, convenient operation, cost be low.
The objective of the invention is to be achieved through the following technical solutions:
The preparation method of the folded battle array of a kind of narrow spectrum high-power semiconductor laser may further comprise the steps:
(1) folds battle array according to the refrigeration modes noise spectra of semiconductor lasers of semiconductor laser stacks and carry out simulated experiment, draw the Temperature Distribution situation in each placement bar bar zone that forms folded battle array;
(2) measure the spectrum that each clings to bar, draw the centre wavelength of each bar bar;
(3) the bar bar that centre wavelength is larger places the lower zone of temperature that step (1) simulates, and the bar bar that centre wavelength is less places the higher zone of folded battle array temperature, and bar bar wavelength and regional temperature are complementary;
(4) the folded battle array of assembling reaches the bar bar consistent wavelength output that forms folded battle array, is the narrow spectrum semiconductor laser stacks of high power.
Based on above principle, prepared following 1), 2) two kinds of folded battle arrays of liquid refrigeration semiconductor laser, the folded battle array of these two kinds of liquid refrigeration semiconductor lasers is by the stacked composition of a plurality of semiconductor laser bars, and each bar bar is electrically connected by the mode of series, parallel or connection in series-parallel combination;
1) the liquid refrigerating loop namely respectively arranges a liquid inlet and a liquid outlet at folded battle array two ends for going with each other all the time.For the folded battle array of this liquid refrigeration semiconductor laser, draw with simulation by experiment: each temperature of placing bar bar zone that forms folded battle array is symmetrical, and folded battle array middle part temperature is high, and folded battle array both sides of the edge regional temperature is low.The bar bar that centre wavelength is larger places folded array edge zone, and the bar bar that centre wavelength is less places the assembly model at folded battle array middle part, and bar bar wavelength and regional temperature are complementary, and the folded battle array output spectrum of assembling is narrower.
2) the liquid cooling passage is the folded battle array of unidirectional linear liquid refrigeration semiconductor laser, namely at folded battle array one end liquid inlet is set, and the other end arranges liquid outlet.For the folded battle array of this liquid refrigeration semiconductor laser, draw with simulation by experiment: the regional temperature that is positioned at the place, liquid inlet is lower, and away from the place, liquid inlet, along liquid flow direction, clinging to accordingly the bar regional temperature increases gradually; Respectively cling to bar with what form folded battle array, according to its centre wavelength from big to small, place successively section zone of each to liquid outlet from liquid inlet, that is: the bar bar that centre wavelength is larger places the zone near folded battle array liquid inlet, the bar bar that centre wavelength is moderate is arranged on folded battle array middle part, the bar bar that centre wavelength is less is arranged on the zone near liquid outlet, and bar bar wavelength and regional temperature are complementary, and the output spectrum of folded battle array is narrower.
The present invention has following beneficial effect:
1, the present invention has well spectrum narrowing effect, adopts the semiconductor laser stacks spectral width of the inventive method preparation to reduce about 30%.
2, technique of the present invention is comparatively simple, and cost is low.
Description of drawings
Fig. 1 is the technical solution of the present invention schematic diagram;
Fig. 2 is the folded battle array of the formula that the goes with each other all the time liquid refrigerating structural representation according to principle of the invention preparation;
Fig. 3 is the Temperature Distribution of the formula that the goes with each other all the time semiconductor laser stacks of 20 bar bars compositions;
Fig. 4 be the present invention prepare by 20 975nm peak power 5000W of forming of bar bars formula semiconductor laser stacks spectrum test result that goes with each other all the time;
Fig. 5 is the folded battle array of the unidirectional linear pattern liquid refrigerating structural representation according to principle of the invention preparation;
Fig. 6 is the Temperature Distribution of the unidirectional linear pattern semiconductor laser stacks of 60 bar bars compositions;
Fig. 7 is the through-type semiconductor laser stacks spectrum test of the 808nm peak power 18kW result who is comprised of 60 bar bars.
Among the figure, 1 is liquid inlet, and 2 is liquid outlet, and 3 is semiconductor laser bar.
Embodiment
Be described in detail technical scheme of the present invention below in conjunction with drawings and Examples:
As shown in Figure 1, by the Temperature Distribution of simulation, the rising that wavelength is arranged with temperature reduces.
At first obtain forming the Temperature Distribution situation of each bar bar of folding battle array by simulation; Then measure the spectrum of each bar bar, obtain the centre wavelength of each bar bar; The centre wavelength of semiconductor laser bar can raise with temperature red shift occurs, temperature reduces the generation blue shift, the bar bar that centre wavelength is larger is assembled in the lower zone of temperature (folded array edge zone) when the folded battle array of assembling, and the bar bar that centre wavelength is less is assembled in the higher zone of temperature (folded battle array zone line).Finally make the centre wavelength trend of each bar bar consistent, thereby total spectral width is narrowed.
For the folded battle array of the formula liquid refrigeration semiconductor laser that goes with each other all the time, confirm (as shown in Figure 3) with simulation by experiment: draw each temperature of placing bar bar zone that forms folded battle array symmetrical, folded battle array middle part temperature is high, and folded battle array both sides of the edge regional temperature is low.The bar bar that centre wavelength is larger places folded array edge zone, and the bar bar that centre wavelength is less places the assembly model in the middle of the folded battle array, and bar bar wavelength and regional temperature are complementary, and the folded battle array output spectrum of assembling is narrower.
Shown in Fig. 2,4, utilize technical solution of the present invention to prepare the folded array semiconductor laser of the 975nm peak power 5000W that is formed by 20 bar bars, its spectrum full width at half maximum FWHM (Full width at half maximum) is 3.11nm, and 90% energy spectrum width is 4.15nm only.
For the folded battle array of unidirectional linear pattern liquid refrigeration semiconductor laser, confirm (as shown in Figure 6) with simulation by experiment: draw the regional temperature that is positioned at the place, liquid inlet lower, away from the place, liquid inlet, along liquid flow direction, clinging to accordingly the bar regional temperature increases gradually; Therefore adopt the bar bar that centre wavelength is larger to place folded battle array porch fringe region, the bar bar that centre wavelength is less places the assembly model between the folded battle array liquid outlet, and bar bar wavelength and regional temperature are complementary.
Shown in Fig. 5,7, utilize technical solution of the present invention to prepare the folded array semiconductor laser of the 808nm peak power 18kW that is formed by 60 bar bars, its spectrum full width at half maximum FWHM is 2.80nm, 90% energy width is 4.26nm.
Can find out from above-described embodiment, adopt the present invention to obtain the effect of the spectrum that well narrows, have very strong practicality.
Claims (3)
1. the preparation method of the folded battle array of one kind narrow spectrum high-power semiconductor laser may further comprise the steps:
(1) folds battle array according to the refrigeration modes noise spectra of semiconductor lasers of semiconductor laser stacks and carry out simulated experiment, draw the Temperature Distribution situation in each placement bar bar zone that forms folded battle array;
(2) measure the spectrum that each clings to bar, draw the centre wavelength of each bar bar;
(3) the bar bar that centre wavelength is larger places the lower zone of temperature that step (1) simulates, and the bar bar that centre wavelength is less places the higher zone of folded battle array temperature, and bar bar wavelength and regional temperature are complementary;
(4) the folded battle array of assembling reaches the bar bar consistent wavelength output that forms folded battle array, is the narrow spectrum semiconductor laser stacks of high power.
2. the folded battle array of the narrow spectrum high-power semiconductor laser of a liquid refrigerating forms by a plurality of semiconductor laser bars are stacked, and each bar bar is electrically connected by the mode of series, parallel or connection in series-parallel combination; The liquid refrigerating loop of the folded battle array of the narrow spectrum high-power semiconductor laser of this liquid refrigerating namely respectively arranges a liquid inlet and a liquid outlet at folded battle array two ends for going with each other all the time; Form in the bar bar of folded battle array, the bar bar that centre wavelength is larger places folded array edge zone, and the bar bar that centre wavelength is less places folded battle array middle part, so that bar bar wavelength and regional temperature are complementary.
3. the folded battle array of the narrow spectrum high-power semiconductor laser of a liquid refrigerating forms by a plurality of semiconductor laser bars are stacked, and each bar bar is electrically connected by the mode of series, parallel or connection in series-parallel combination; The liquid cooling passage of the folded battle array of the narrow spectrum high-power semiconductor laser of this liquid refrigerating is the folded battle array of unidirectional linear liquid refrigeration semiconductor laser, namely at folded battle array one end liquid inlet is set, and the other end arranges liquid outlet; What form folded battle array respectively clings to bar, according to its centre wavelength from big to small, places successively section zone of each to liquid outlet from liquid inlet, so that bar bar wavelength and regional temperature are complementary.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114784614A (en) * | 2022-06-24 | 2022-07-22 | 度亘激光技术（苏州）有限公司 | Laminating method and cavity surface coating method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101635432A (en) * | 2009-08-31 | 2010-01-27 | 西安炬光科技有限公司 | Liquid refrigerating chip for semiconductor laser and preparation method thereof |
| CN101640379A (en) * | 2009-08-31 | 2010-02-03 | 西安炬光科技有限公司 | Novel low-cost stack-up array liquid refrigeration semiconductor laser and manufacturing method thereof |
| CN203071398U (en) * | 2012-12-28 | 2013-07-17 | 西安炬光科技有限公司 | Liquid cooling narrow-spectrum high-power semiconductor laser stack |
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- 2012-12-28 CN CN2012105914147A patent/CN103078254A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101635432A (en) * | 2009-08-31 | 2010-01-27 | 西安炬光科技有限公司 | Liquid refrigerating chip for semiconductor laser and preparation method thereof |
| CN101640379A (en) * | 2009-08-31 | 2010-02-03 | 西安炬光科技有限公司 | Novel low-cost stack-up array liquid refrigeration semiconductor laser and manufacturing method thereof |
| CN203071398U (en) * | 2012-12-28 | 2013-07-17 | 西安炬光科技有限公司 | Liquid cooling narrow-spectrum high-power semiconductor laser stack |
Non-Patent Citations (1)
| Title |
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| XIAONING LI ET AL.: "Hard solder 20kW QCW Stack Array Diode Laser", 《PROC.SPIE 8241,HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS X,8241C》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114784614A (en) * | 2022-06-24 | 2022-07-22 | 度亘激光技术（苏州）有限公司 | Laminating method and cavity surface coating method |
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Application publication date: 20130501 |