CN202977492U - Monocrystalline silicon solar cell - Google Patents
Monocrystalline silicon solar cell Download PDFInfo
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- CN202977492U CN202977492U CN2012206780431U CN201220678043U CN202977492U CN 202977492 U CN202977492 U CN 202977492U CN 2012206780431 U CN2012206780431 U CN 2012206780431U CN 201220678043 U CN201220678043 U CN 201220678043U CN 202977492 U CN202977492 U CN 202977492U
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Abstract
The utility model relates to a monocrystalline silicon solar cell comprising a first doped type monocrystalline silicon layer, a second doped type monocrystalline silicon layer arranged on the upper surface of the first doped type monocrystalline silicon layer, a first stress layer arranged on the surface of the second doped type monocrystalline silicon layer, a first electrode arranged on the surface of the first stress layer, and a second electrode arranged on the lower surface of the first doped type monocrystalline silicon layer. Besides, the stress type of the first stress layer corresponds to the doped type of the second doped type monocrystalline silicon layer. According to the monocrystalline silicon solar cell provided by the utility model, the mobility of a carrier in the monocrystalline silicon solar cell can be effectively improved; and thus the conversion efficiency of the monocrystalline silicon solar cell can also be improved.
Description
Technical field
The utility model relates to area of solar cell, particularly a kind of monocrystaline silicon solar cell.
Background technology
Solar cell utilizes photoelectric effect to convert light to electric energy.Basic solar battery structure comprises single p-n junction, P-I-N/N-I-P knot and multijunction structure.Typical single p-n junction structure comprises: P type doped layer and N-type doped layer.The single p-n junction solar cell has homojunction and two kinds of structures of heterojunction: the P type doped layer of homojunction structure and N-type doped layer all are made of analog material (band gap of material equates), and heterojunction structure comprises the material with two-layer at least different band gap.The P-I-N/N-I-P structure comprise P type doped layer, N-type doped layer and be sandwiched in the P layer and the N layer between intrinsic semiconductor layer (the I layer does not adulterate).Multijunction structure comprises a plurality of semiconductor layers with different band gap, and described a plurality of semiconductor layers are stacking mutually.
In solar cell, light is absorbed near the P-N knot, produces light induced electron and photohole, and described light induced electron and photohole diffuse into the P-N knot and separated by internal electric field, and light induced electron is pushed into the N district, and the hole is pushed into the P district.Form positive and negative charge accumulated in PN junction both sides, generate thereby produce the photoproduction electromotive force electric current that passes described device and external circuit system.
At present, monocrystaline silicon solar cell is because its larger photoelectric conversion efficiency is produced widely and used, and monocrystaline silicon solar cell is generally that the doped N-type ion forms PN junction on the p type single crystal silicon sheet.The conversion efficiency of monocrystaline silicon solar cell is subject to the impact of several factors, remains further to be improved.
More manufacture methods about monocrystaline silicon solar cell please refer to the Chinese patent that publication number is CN102315327A.
The utility model content
The problem that the utility model solves is to provide a kind of monocrystaline silicon solar cell, and described monocrystaline silicon solar cell has higher conversion efficiency.
For addressing the above problem, the utility model provides a kind of monocrystaline silicon solar cell, comprising: the first doping type monocrystalline silicon layer and the second doping type monocrystalline silicon layer that is positioned at described the first doping type monocrystalline silicon layer upper surface; Be positioned at first stressor layers on the surface of described the second doping type monocrystalline silicon layer, the stress types of described the first stressor layers is corresponding with the doping type of the second doping type monocrystalline silicon layer; Be positioned at first electrode on described the first stressor layers surface; Be positioned at the second electrode of the first doping type monocrystalline silicon layer lower surface.
Optionally, described the first doping type monocrystalline silicon layer is P type layer, and described the second doping type monocrystalline silicon layer is the N-type layer, and described the first stressor layers has tensile stress.
Optionally, described the first doping type monocrystalline silicon layer is the N-type layer, and described the second doping type monocrystalline silicon layer is P type layer, and described the first stressor layers has compression.
Optionally, the thickness of described the first stressor layers is 0.5nm ~ 100nm.
Optionally, the number range of the stress of described the first stressor layers is 200MPa ~ 1000MPa.
Optionally, the second stressor layers that also comprises the lower surface that is positioned at the first doping type monocrystalline silicon layer.
Optionally, also comprise: the anti-reflecting layer between described the first electrode and the first stressor layers
Optionally, also comprise: the anti-reflecting layer between described the second doping type monocrystalline silicon layer and the first stressor layers.
Compared with prior art, the utlity model has following advantage:
The second doping type monocrystalline surface of monocrystaline silicon solar cell described in the utility model has the first stressor layers, and the stress types of described the first stressor layers is corresponding with the doping type of described the second doping type monocrystalline silicon layer.make stereo-motion in the process that charge carrier in described the second doping type monocrystalline silicon layer flows to the first electrode in three-dimensional in the second doping type monocrystalline silicon layer, the first stressor layers of described the second doping type monocrystalline surface can make the second doping type monocrystalline silicon layer be subject to effect of stress, improve the mobility of charge carrier in the second doping type monocrystalline silicon layer, thereby reduce light induced electron or photohole after the process PN junction, in the process of the first drift electrode by compound probability, improve to arrive the electronics at the first electrode place or the quantity in hole, improve total current density of solar cell, thereby improve the conversion efficiency of monocrystaline silicon solar cell.
Further, if described the first doping type monocrystalline silicon layer is P type layer, the second doping type monocrystalline silicon layer is the N-type layer, and the first stressor layers of described the second doping type monocrystalline surface has tensile stress.Make stereo-motion in the process that electronics in described the second doping type monocrystalline silicon layer flows to the first electrode in three-dimensional in the second doping type monocrystalline silicon layer, described the first stressor layers with tensile stress makes the N-type layer be subject to the tensile stress effect, can improve the mobility of electronics in described N-type layer, thereby reduce the light induced electron that produces in P type layer, after the process PN junction, in the N-type layer in the process of the first drift electrode, by compound probability, improve to arrive the electron amount at the first electrode place, thereby improve the conversion efficiency of monocrystalline silicon thin film solar cell.If described the first doping type monocrystalline silicon layer is P type layer, the second doping type monocrystalline silicon layer is the N-type layer, and the first stressor layers of described the second doping type monocrystalline surface has compression.Make stereo-motion in the process that flows to the first electrode in hole in described the second doping type monocrystalline silicon layer in three-dimensional in the second doping type monocrystalline silicon layer, described the first stressor layers with compression makes P type layer be subject to action of compressive stress, improve the mobility in hole in described P type layer, thereby reduce the photohole that produces in the N-type layer, after the process PN junction, in P type layer in the process of the first drift electrode by compound probability, improve to arrive the number of cavities at the first electrode place, thereby improve the conversion efficiency of monocrystalline silicon thin film solar cell.
Further, the utility model also comprises, be positioned at the second stressor layers of the lower surface of the first doping type monocrystalline silicon layer, can improve simultaneously the carrier mobility in the first doping type monocrystalline silicon layer and the second doping type monocrystalline silicon layer, further improve the conversion efficiency of monocrystaline silicon solar cell.
Description of drawings
Fig. 1 is the schematic flow sheet of the manufacture method of monocrystaline silicon solar cell in embodiment of the present utility model;
Fig. 2 to Fig. 6 is the generalized section of the manufacture method of monocrystaline silicon solar cell in embodiment of the present utility model.
Embodiment
As described in the background art, the conversion efficiency of monocrystaline silicon solar cell remains further to be improved at present.
Research is found, the compound direct open circuit voltage that affects solar cell of photo-generated carrier.So charge carrier is in the process of electrode movement, thereby the migration rate of raising charge carrier can effectively reduce the conversion efficiency that the recombination rate of photo-generated carrier improves solar cell.
The utility model proposes a kind of monocrystaline silicon solar cell, the second doping type monocrystalline surface of described monocrystaline silicon solar cell has the first stressor layers, carrier mobility in the second doping type monocrystalline silicon layer is improved, thereby improves the conversion efficiency of solar cell.
For above-mentioned purpose of the present utility model, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, embodiment of the present utility model is described in detail.Described embodiment is only the part of embodiment of the present utility model, rather than they are whole.When the utility model embodiment was described in detail in detail, for ease of explanation, schematic diagram can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit protection range of the present utility model at this.The three-dimensional space that should comprise in addition, length, width and the degree of depth in actual fabrication.According to described embodiment, those of ordinary skill in the art belongs to protection range of the present utility model need not obtainable all other execution modes under the prerequisite of creative work.Therefore the utility model is not subjected to the restriction of following public concrete enforcement.
Please refer to Fig. 1, the schematic flow sheet for the manufacture method of monocrystaline silicon solar cell in the present embodiment comprises:
Step S1: substrate is provided, and described substrate is the first doping type monocrystalline silicon piece;
Step S2: the second doping type doping is carried out on the surface of described substrate, formed the first doping type monocrystalline silicon layer and the second doping type monocrystalline silicon layer that is positioned at described the first doping type monocrystalline silicon layer upper surface;
Step S3: the surface at described the second doping type monocrystalline silicon layer forms the first stressor layers, and the stress types of described the first stress is corresponding with the doping type of the second doping type monocrystalline silicon layer;
Step S4: at described the first stressor layers surface formation anti-reflecting layer;
Step S5: at described anti-reflecting layer surface formation the first electrode, at lower surface formation second electrode of the first doping type monocrystalline silicon layer.
Please refer to Fig. 2, substrate 100 is provided, described substrate 100 is the first doping type monocrystalline silicon piece.
Concrete, described substrate 100 is p type single crystal silicon sheet or n type single crystal silicon sheet, the substrate that adopts in the present embodiment is the p type single crystal silicon sheet, follow-up N doping, the formation N-type layer of carrying out on described p type single crystal silicon sheet.In other embodiment of the present utility model, described substrate also can be selected the n type single crystal silicon sheet, follow-up P doping, the formation P type layer of carrying out on described n type single crystal silicon sheet.
Described P type single-chip is when forming silicon chip, described silicon chip to be carried out the boron ion doping, can also be described silicon chip to be carried out the doping of one or more ions in boron, gallium or indium.The concentration range of the doping ion of described substrate is 1E10/cm
3~ 1E20/cm
3
Please refer to Fig. 3, described substrate 100(be please refer to Fig. 1) the surface carry out the second doping type doping, form the first doping type monocrystalline silicon layer 101 and be positioned at the second doping type monocrystalline silicon layer 102 of described the first doping type monocrystalline silicon layer 101 upper surfaces.
Concrete, if described substrate 100 is the p type single crystal silicon sheet, described substrate is carried out the N-type doping, the first doping type monocrystalline silicon layer 101 of formation is P type layer, and the second doping type monocrystalline silicon layer 102 that is positioned at described the first doping type monocrystalline silicon layer 101 upper surfaces is the N-type layer; If described substrate is the n type single crystal silicon sheet, described substrate is carried out the doping of P type, the first doping type monocrystalline silicon layer 101 of formation is the N-type layer, the second doping type monocrystalline silicon layer 102 that is positioned at described the first doping type monocrystalline silicon layer 101 upper surfaces is P type layer.
In the present embodiment, described substrate 100 is the p type single crystal silicon sheet, so described substrate is carried out the N-type doping, the the first doping type monocrystalline silicon layer 101 that forms is P type layer, the second doping type monocrystalline silicon layer 102 is the N-type layer, and described P type layer and N-type layer are in contact with one another, and forms PN junction.In the present embodiment, the ion of described N-type doping is phosphorus.Concrete grammar is: substrate is placed in the tubular diffusion furnace quartz container, uses nitrogen to bring phosphorus oxychloride into quartz container under 850 ℃ ~ 900 ℃ high temperature, by phosphorus oxychloride and silicon chip reaction, obtain phosphorus atoms.Through after a while, phosphorus atoms enters the superficial layer of substrate from surrounding, and spreads to the substrate internal penetration by the space between silicon atom, forms the interface of N-type layer and P type layer, namely PN junction.In other embodiment of the present utility model, described N-type doping ion can also be one or more in phosphorus, arsenic or antimony.The concentration range of the doping ion of described the second doping type monocrystalline silicon layer 102 is 1E10/cm
3~ 1E20/cm
3, the PN junction junction depth of formation is 0.3 μ m ~ 0.5 μ m.The degree of depth of described N-type diffusion can not be too thick, because diffusion needs concentration gradient just can make impurity spread in substrate.If the described PN junction that diffuses to form is too dark, can cause the serious degeneracy of energy level in surface, make the drops of opening of solar cell, battery efficiency descends.
In other embodiment of the present utility model, also can carry out P type ion doping to described n type single crystal silicon sheet with the n type single crystal silicon sheet as substrate, form P type layer.Described P type doping ion comprises one or more ions in boron, gallium or indium.In the P type layer that P type ion diffuses to form, the doping content scope is 1E10/cm
3~ 1E20/cm
3, the PN junction junction depth of formation is 0.3 μ m ~ 0.5 μ m.
In the present embodiment, because light induced electron is done drift motion by the first doping type monocrystalline silicon layer 101 to the second doping type monocrystalline silicon layer 102, photohole is taken exercises to the first doping type monocrystalline silicon layer 101 by the second doping type monocrystalline silicon layer 102.Because electron mass is more much smaller than hole mass, so the same time electronics is longer than the distance of movement of hole, if the first doping type monocrystalline silicon layer 101 thickness are less than the thickness of Second-Type monocrystalline silicon layer 102, the hole does not also move to the first doping type monocrystalline silicon layer will be fallen by compound, so the thickness of the first doping type monocrystalline silicon layer 101 is greater than the thickness of the second doping type monocrystalline silicon layer 102.
Before described substrate being carried out the second doping type doping, at first described substrate is cleaned, remove the impurity of substrate surface, thereby avoid the performance of impurity effect monocrystaline silicon solar cell.
After cleaning, can also prepare matte to described substrate surface, with aqueous slkali, substrate surface is carried out anisotropic etch, form matte at described substrate surface, described matte can improve the contact area of substrate surface and sunlight and reduce sun reflection of light.After the preparation matte, then carry out the second doping type doping.
Please refer to Fig. 4, in described second doping type monocrystalline silicon layer 102 surface formation the first stressor layers 103.
On described the second doping type monocrystalline silicon layer 102 surfaces, form the first stressor layers 103, described the first stressor layers 103 comprises transparent nonconducting films such as silicon nitride film, silicon oxide film.The formation technique of described the first stressor layers 103 can be plasma enhanced chemical vapor deposition (PECVD) or thermal chemical vapor deposition.
In the present embodiment, described the second doping type monocrystalline silicon layer 102 is the N-type layer, has the first stressor layers 103 of tensile stress in the surface formation of described N-type layer.In the present embodiment, described the first stressor layers 103 is silicon nitride film, and the formation technique of employing is plasma enhanced chemical vapor deposition, and wherein, reacting gas is NH
2And SiH
4, utilize the inert gases such as Ar as carrier gas, SiH
4And NH
2Gas flow ratio be 0.1 ~ 4, reaction temperature is 200 ℃ ~ 500 ℃, reaction pressure is 100mTorr ~ 200mTorr, and a power is provided is the radio frequency power source of 10W ~ 100W, frequency is 13.56MHz.The thickness of described the first stressor layers 103 is 0.5nm ~ 100nm, has tensile stress, and the tensile stress number range is 200MPa ~ 1000MPa.
Electronics in described the second doping type monocrystalline silicon layer interior 102 is made stereo-motion in three-dimensional in the process that flows to the first electrode.Described the first stressor layers 103 with tensile stress makes the N-type layer be subject to the effect of the tensile stress in horizontal plane, the mobility of electronics in the N-type layer is improved, thereby reduce light induced electron through after PN junction in the N-type layer in Drift Process by compound probability, improve to arrive the electron amount at the first electrode place, improve total current density of solar cell, thereby improve the conversion efficiency of solar cell.
In other embodiment of the present utility model, described the second doping type monocrystalline silicon layer 102 can be also P type layer, has the first stressor layers 103 of compression in the surface formation of described P type layer.Described the first stressor layers with compression comprises silicon nitride film or silicon oxide film, and described formation technique with first stressor layers of compression comprises plasma enhanced chemical vapor deposition or thermal chemical vapor deposition.In an embodiment of the present utility model, described the first stressor layers with compression is silicon nitride film, and the formation technique of employing is plasma enhanced chemical vapor deposition, and wherein, reacting gas is NH
2And SiH
4, utilize the inert gases such as Ar as carrier gas, SiH
4And NH
2Gas flow ratio be 0.1 ~ 4, reaction temperature is 200 ℃ ~ 500 ℃, reaction pressure is 100mTorr ~ 200mTorr, the low frequency power source that a power is provided is 10W ~ 100W, frequency is 100KHz.The thickness of described the first stressor layers is 0.5nm ~ 100nm, has compression, and the number range of compression is 200MPa ~ 1000MPa.In the process that flows to the first electrode in the second doping type monocrystalline silicon layer in hole in described the second doping type monocrystalline silicon layer, make stereo-motion in three-dimensional, described the first stressor layers with compression, make P type layer be subject to the effect of the compression in horizontal plane, the mobility of photohole in P type layer is improved, thereby reduce photohole after the process PN junction, in P type layer in Drift Process by compound probability, improve to arrive the number of cavities at the first electrode place, thereby improve the conversion efficiency of solar cell.
In other embodiment of the present utility model, can also form the first stressor layers in the first doping type monocrystalline surface, lower surface at the second doping type monocrystalline silicon layer forms the second stressor layers, make the first doping type monocrystalline silicon layer and the second doping type monocrystalline silicon layer all be subject to effect of stress, improve simultaneously the mobility of charge carrier in the first doping type monocrystalline silicon layer and the second doping type monocrystalline silicon layer, further improve the conversion efficiency of solar cell.
Please refer to Fig. 5, at described the first stressor layers 103 surface formation anti-reflecting layers 104.
Described anti-reflecting layer 104 is the transparent material of low-refraction coefficient, for example TiO
2, SiN, SiO, Al
2O
3, SiO
2Or CeO
2Deng.Concrete, can adopt the methods such as PECVD, magnetron sputtering or electron beam evaporation to form described anti-reflecting layer 104, the thickness range of described anti-reflecting layer 104 is
In other embodiment of the present utility model, the silicon nitride film or the silicon oxide film that adopt due to described the first stressor layers 103 have lower specific refractivity, can reduce the reflection to sunlight, can be used as the anti-reflecting layer of the second doping type monocrystalline surface, improve solar cell to the absorptivity of sunlight.So can additionally form again described anti-reflecting layer 104, thereby can reduce processing step.
In other embodiment of the present utility model, also can first form anti-reflecting layer on the second doping type monocrystalline silicon layer 102 surfaces, and then in described anti-reflecting layer surface formation the first stressor layers, described anti-reflecting layer 104 is except antireflecting effect, can also play to the second doping type monocrystalline surface the effect of passivated surface, reduce the recombination rate of charge carrier.Because the thickness of described anti-reflecting layer is lower, so the second doping type monocrystalline silicon layer can be subject to the effect of stress of the first stressor layers equally, improve the mobility of charge carrier.
Please refer to Fig. 6, at described anti-reflecting layer 104 surface formation the first electrodes 105, at lower surface formation second electrode 106 of the first doping type monocrystalline silicon layer 101.
The concrete technology that forms described the first electrode 105 and the second electrode 106 is known for those skilled in the art, does not repeat them here.
According to above-mentioned manufacture method, embodiment of the present utility model also provides a kind of monocrystaline silicon solar cell that adopts above-mentioned manufacture method to form.
Please refer to Fig. 6, the generalized section of the monocrystaline silicon solar cell that provides for embodiment of the present utility model.
Concrete, comprising: the first doping type monocrystalline silicon layer 101 and the second doping type monocrystalline silicon layer 102 that is positioned at described the first doping type monocrystalline silicon layer 101 upper surfaces; Be positioned at first stressor layers 103 on described the second doping type monocrystalline silicon layer 102 surfaces, the stress types of described the first stressor layers 103 is corresponding with the stress types of the second doping type monocrystalline silicon layer 102; Be positioned at described anti-reflecting layer 104 with first stressor layers 103 surfaces of tensile stress; Be positioned at first electrode 105 and the second electrode 106 that is positioned at described the first doping type monocrystalline silicon layer 101 lower surfaces on described anti-reflecting layer 104 surfaces.
In the present embodiment, described the first doping type monocrystalline silicon layer 101 is P type layer, and ion doping concentration is 1E10/cm
3~ 1E20/cm
3, the doping ion comprises one or more in boron, gallium or indium; Described the second doping type monocrystalline silicon layer 102 is the N-type layer, and ion doping concentration is 1E10/cm
3~ 1E20/cm
3, the doping ion comprises one or more in phosphorus, arsenic or antimony.Described the first stressor layers 103 comprises silicon nitride film or silicon oxide film, and thickness is 0.5nm ~ 100nm, and the number range of stress is 200MPa ~ 1000MPa, and stress types is tensile stress.Described the first stressor layers 103 with tensile stress makes the N-type layer be subject to the effect of the tensile stress in horizontal plane, the mobility of electronics in the N-type layer is improved, thereby reduce light induced electron through after PN junction in the N-type layer in Drift Process by compound probability, improve to arrive the electron amount at the first electrode place, improve total current density of solar cell, thereby improve the conversion efficiency of solar cell.
In other embodiment of the present utility model, described the first doping type monocrystalline silicon layer 101 is the N-type layer, and ion doping concentration is 1E10/cm
3~ 1E20/cm
3, the doping ion comprises one or more in phosphorus, arsenic or antimony; Described the second doping type monocrystalline silicon layer 102 is P type layer, and ion doping concentration is 1E10/cm
3~ 1E20/cm
3, the doping ion comprises one or more in boron, gallium or indium.Described the first stressor layers 103 comprises silicon nitride film or silicon oxide film, and thickness is 0.5nm ~ 100nm, and the number range of stress is 200MPa ~ 1000MPa, and stress types is compression.Described the first stressor layers with compression, make P type layer be subject to the effect of the compression in horizontal plane, the mobility of photohole in P type layer is improved, thereby reduce photohole after the process PN junction, in P type layer in Drift Process by compound probability, improve to arrive the number of cavities at the first electrode place, thereby improve the conversion efficiency of solar cell.
In other embodiment of the present utility model, comprise that also the lower surface that is positioned at the second doping type monocrystalline silicon layer forms the second stressor layers, make the first doping type monocrystalline silicon layer and the second doping type monocrystalline silicon layer all be subject to effect of stress, improve simultaneously the mobility of charge carrier in the first doping type monocrystalline silicon layer and the second doping type monocrystalline silicon layer, further improve the conversion efficiency of solar cell.
The material of described anti-reflecting layer is TiO
2, SiN, SiO, Al
2O
3, SiO
2Or CeO
2In other embodiment of the present utility model, described anti-reflecting layer can also be between the first stressor layers 103 second doping type monocrystalline silicon layers 102, described anti-reflecting layer 104 is except antireflecting effect, can also play to the second doping type monocrystalline surface the effect of passivated surface, reduce the recombination rate of charge carrier.Because the thickness of described anti-reflecting layer is lower, so the second doping type monocrystalline silicon layer can be subject to the effect of stress of the first stressor layers equally, improve the mobility of charge carrier.
By the explanation of above-described embodiment, should be able to make this area professional and technical personnel understand better the utility model, and can reproduce and use the utility model.Those skilled in the art can be in the situation that do not break away from essence of the present utility model and above-described embodiment is done various changes to scope and modification is apparent according to described principle herein.Therefore, the utility model should not be understood to be limited to above-described embodiment shown in this article, and its protection range should be defined by appending claims.
Claims (8)
1. a monocrystaline silicon solar cell, is characterized in that, comprising:
The first doping type monocrystalline silicon layer and the second doping type monocrystalline silicon layer that is positioned at described the first doping type monocrystalline silicon layer upper surface;
Be positioned at first stressor layers on the surface of described the second doping type monocrystalline silicon layer, the stress types of described the first stressor layers is corresponding with the doping type of the second doping type monocrystalline silicon layer;
Be positioned at first electrode on described the first stressor layers surface;
Be positioned at the second electrode of the first doping type monocrystalline silicon layer lower surface.
2. monocrystaline silicon solar cell according to claim 1, is characterized in that, described the first doping type monocrystalline silicon layer is P type layer, and described the second doping type monocrystalline silicon layer is the N-type layer, and described the first stressor layers has tensile stress.
3. monocrystaline silicon solar cell according to claim 1, is characterized in that, described the first doping type monocrystalline silicon layer is the N-type layer, and described the second doping type monocrystalline silicon layer is P type layer, and described the first stressor layers has compression.
4. monocrystaline silicon solar cell according to claim 1, is characterized in that, the thickness of described the first stressor layers is 0.5nm ~ 100nm.
5. monocrystaline silicon solar cell according to claim 1, is characterized in that, the number range of the stress of described the first stressor layers is 200MPa ~ 1000MPa.
6. monocrystaline silicon solar cell according to claim 1, is characterized in that, also comprises the second stressor layers of the lower surface that is positioned at the first doping type monocrystalline silicon layer.
7. monocrystaline silicon solar cell according to claim 1, is characterized in that, also comprises: the anti-reflecting layer between described the first electrode and the first stressor layers.
8. monocrystaline silicon solar cell according to claim 1, is characterized in that, also comprises: the anti-reflecting layer between described the second doping type monocrystalline silicon layer and the first stressor layers.
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| CN2012206780431U CN202977492U (en) | 2012-12-06 | 2012-12-06 | Monocrystalline silicon solar cell |
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|---|---|---|---|
| CN2012206780431U CN202977492U (en) | 2012-12-06 | 2012-12-06 | Monocrystalline silicon solar cell |
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