CN103107237B - Monocrystaline silicon solar cell and preparation method thereof - Google Patents
Monocrystaline silicon solar cell and preparation method thereof Download PDFInfo
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- CN103107237B CN103107237B CN201210529746.2A CN201210529746A CN103107237B CN 103107237 B CN103107237 B CN 103107237B CN 201210529746 A CN201210529746 A CN 201210529746A CN 103107237 B CN103107237 B CN 103107237B
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Abstract
A kind of monocrystaline silicon solar cell and preparation method thereof, the manufacture method of described monocrystaline silicon solar cell comprises: provide substrate, and described substrate is first kind monocrystalline silicon piece; Second Type doping is carried out to the surface of described substrate, forms first kind monocrystalline silicon layer and the Second Type monocrystalline silicon layer being positioned at described first kind monocrystalline silicon layer upper surface; The first stressor layers is formed on the surface of described Second Type monocrystalline silicon layer; Form the first electrode on described first stressor layers surface, form the second electrode at the lower surface of described first kind monocrystalline silicon layer.The manufacture method of described monocrystaline silicon solar cell effectively can improve the mobility of charge carrier in monocrystaline silicon solar cell, improves the conversion efficiency of monocrystaline silicon solar cell.
Description
Technical field
The present invention relates to area of solar cell, particularly a kind of monocrystaline silicon solar cell and preparation method thereof.
Background technology
Solar cell utilizes photoelectric effect to convert light to electric energy.Basic solar battery structure, comprises single p-n junction, P-I-N/N-I-P knot and multijunction structure.Typical single p-n junction structure comprises: P type doped layer and N-type doped layer.Single p-n junction solar cell has homojunction and heterojunction two kinds of structures: the P type doped layer of homojunction structure and N-type doped layer are all made up of analog material (band gap of material is equal), and heterojunction structure comprises the material with at least two-layer different band gap.P-I-N/N-I-P structure comprises P type doped layer, N-type doped layer and is sandwiched in the intrinsic semiconductor layer (do not adulterate I layer) between P layer and N layer.Multijunction structure comprises multiple semiconductor layers with different band gap, and described multiple semiconductor layer is stacking mutually.
In solar cells, light is absorbed near P-N junction, and produce light induced electron and photohole, described light induced electron and photohole diffuse into P-N junction and separated by internal electric field, and light induced electron is pushed into N district, and hole is pushed into P district.Form positive and negative charge accumulated in PN junction both sides, produce photo-induced voltage thus be generated across the electric current of described device and external circuitry.
At present, monocrystaline silicon solar cell is produced widely and is applied due to its larger photoelectric conversion efficiency, and monocrystaline silicon solar cell is generally that doped N-type ion forms PN junction on p type single crystal silicon sheet.The conversion efficiency of monocrystaline silicon solar cell is subject to the impact of several factors, needs further to be improved.
More manufacture methods about monocrystaline silicon solar cell please refer to the Chinese patent that publication number is CN102315327A.
Summary of the invention
The problem that the present invention solves is to provide a kind of monocrystaline silicon solar cell and preparation method thereof, improves the conversion efficiency of monocrystaline silicon solar cell.
For solving the problem, technical scheme of the present invention proposes a kind of manufacture method of monocrystaline silicon solar cell, comprising: provide substrate, and described substrate is first kind monocrystalline silicon piece; Second Type doping is carried out to the surface of described substrate, forms first kind monocrystalline silicon layer and the Second Type monocrystalline silicon layer being positioned at described first kind monocrystalline silicon layer upper surface; The first stressor layers is formed on the surface of described Second Type monocrystalline silicon layer; Form the first electrode on described first stressor layers surface, form the second electrode at the lower surface of described first kind monocrystalline silicon layer.
Optionally, described first kind monocrystalline silicon layer is P-type layer, and described Second Type monocrystalline silicon layer is N-type layer, and described first stressor layers has tensile stress.
Optionally, described first kind monocrystalline silicon layer is N-type layer, and described Second Type monocrystalline silicon layer is P-type layer, and described first stressor layers has compression.
Optionally, described first stressor layers comprises silicon nitride film or silicon oxide film.
Optionally, the formation process of described first stressor layers comprises thermal chemical vapor deposition or plasma enhanced chemical vapor deposition.
Optionally, the formation method described in formation with the first stressor layers of tensile stress comprises: using plasma strengthens chemical vapor deposition method, wherein, and NH
2and SiH
4as reacting gas, inert gas is as carrier gas, and reaction temperature is 200 DEG C ~ 500 DEG C, and reaction pressure is 100mTorr ~ 200mTorr, and provides a power to be 10W ~ 100W, and frequency is the radio frequency power source of 10MHz ~ 15MHz.
Optionally, the formation method described in formation with the first stressor layers of compression comprises: using plasma strengthens chemical vapor deposition method, wherein, and NH
2and SiH
4as reacting gas, inert gas is as carrier gas, and reaction temperature is 200 DEG C ~ 500 DEG C, and reaction pressure is 100mTorr ~ 200mTorr, and provides a power to be 10W ~ 100W, and frequency is the low frequency power source of 50KHz ~ 500kHz.
Optionally, the thickness of described first stressor layers is 0.5nm ~ 100nm, and the number range of the stress of described first stressor layers is 200MPa ~ 1000MPa.
Optionally, the lower surface being also included in first kind monocrystalline silicon layer forms the second stressor layers.
Optionally, also comprise: after the first stressor layers surface forms anti-reflecting layer, then form the first electrode on described anti-reflecting layer surface.
Optionally, also comprise: after Second Type monocrystalline surface forms anti-reflecting layer, then form the first stressor layers on described anti-reflecting layer surface.
Optionally, in first kind monocrystalline silicon layer and Second Type monocrystalline silicon layer, the scope of Doped ions concentration is 1E10/cm
3~ 1E20/cm
3.
For solving the problem, the invention allows for a kind of monocrystaline silicon solar cell, comprising: first kind monocrystalline silicon layer and the Second Type monocrystalline silicon layer being positioned at described first kind monocrystalline silicon layer upper surface; Be positioned at first stressor layers on the surface of described Second Type monocrystalline silicon layer; Be positioned at first electrode on described first stressor layers surface; Be positioned at the second electrode of first kind monocrystalline silicon layer lower surface.
Optionally, described first kind monocrystalline silicon layer is P-type layer, and described Second Type monocrystalline silicon layer is N-type layer, and described first stressor layers has tensile stress.
Optionally, described first kind monocrystalline silicon layer is N-type layer, and described Second Type monocrystalline silicon layer is P-type layer, and described first stressor layers has compression.
Optionally, described first stressor layers comprises silicon nitride film or silicon oxide film.
Optionally, the thickness of described first stressor layers is 0.5nm ~ 100nm, and the number range of the stress of described first stressor layers is 200MPa ~ 1000MPa.
Optionally, second stressor layers on the surface being positioned at first kind monocrystalline silicon layer is also comprised.
Optionally, also comprise: the anti-reflecting layer between described first electrode and the first stressor layers or the anti-reflecting layer between described Second Type monocrystalline silicon layer and the first stressor layers.
Optionally, in first kind monocrystalline silicon layer and Second Type monocrystalline silicon layer, the scope of Doped ions concentration is 1E10/cm
3~ 1E20/cm
3.
Compared with prior art, the present invention has the following advantages:
Technical scheme of the present invention, forms the first stressor layers in the Second Type monocrystalline surface of described monocrystaline silicon solar cell.Charge carrier in described Second Type monocrystalline silicon layer makes stereo-motion in Second Type monocrystalline silicon layer in the process of the first electrode flowing in three-dimensional, first stressor layers of described Second Type monocrystalline surface can make Second Type monocrystalline silicon layer be subject to effect of stress, improve the mobility of Second Type monocrystalline silicon layer carriers, thus reduction light induced electron or photohole are after PN junction, by the probability of compound in the process of the first drift electrode, improve the electronics at arrival first electrode place or the quantity in hole, improve total current density of solar cell, thus improve the conversion efficiency of monocrystaline silicon solar cell.
Further, if described first kind monocrystalline silicon layer is P-type layer, Second Type monocrystalline silicon layer is N-type layer, then the first stressor layers of described Second Type monocrystalline surface has tensile stress.Electronics in described Second Type monocrystalline silicon layer makes stereo-motion in Second Type monocrystalline silicon layer in the process of the first electrode flowing in three-dimensional, described first stressor layers with tensile stress makes N-type layer be subject to tensile stress effect, the mobility of electronics in described N-type layer can be improved, thus the light induced electron produced in reduction P-type layer, after PN junction, to in the process of the first drift electrode in N-type layer, by the probability of compound, improve the electron amount at arrival first electrode place, thus improve the conversion efficiency of monocrystalline silicon thin film solar cell.If described first kind monocrystalline silicon layer is P-type layer, Second Type monocrystalline silicon layer is N-type layer, then the first stressor layers of described Second Type monocrystalline surface has compression.Stereo-motion is made in hole in described Second Type monocrystalline silicon layer in Second Type monocrystalline silicon layer in the process of the first electrode flowing in three-dimensional, described first stressor layers with compression makes P-type layer be subject to action of compressive stress, improve the mobility in hole in described P-type layer, thus the photohole produced in reduction N-type layer, after PN junction, to in the process of the first drift electrode in P-type layer, by the probability of compound, improve the number of cavities at arrival first electrode place, thus improve the conversion efficiency of monocrystalline silicon thin film solar cell.
Further, technical scheme of the present invention can also form the second stressor layers at the lower surface of first kind monocrystalline silicon layer, improve the carrier mobility in first kind monocrystalline silicon layer and Second Type monocrystalline silicon layer simultaneously, improve the conversion efficiency of monocrystaline silicon solar cell further.
Further, the material that described first stressor layers adopts is silica or silicon nitride, described silica or silicon nitride film have lower specific refractivity, effect of stress can not only be subject to by Second Type, also contribute to reducing the reflection of monocrystaline silicon solar cell surface to sunlight, improve the absorptance of solar cell, anti-reflecting layer need not be formed again, thus can processing step be saved.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the manufacture method of monocrystaline silicon solar cell in embodiments of the invention;
Fig. 2 to Fig. 6 is the generalized section of the manufacture method of monocrystaline silicon solar cell in embodiments of the invention.
Embodiment
As described in the background art, the conversion efficiency of current monocrystaline silicon solar cell needs further to be improved.
Research finds, the compound of photo-generated carrier directly affects the open circuit voltage of solar cell.So charge carrier is in the process of electrode movement, the migration rate improving charge carrier effectively can reduce the recombination rate of photo-generated carrier thus improve the conversion efficiency of solar cell.
The present invention proposes a kind of monocrystaline silicon solar cell and preparation method thereof, the first stressor layers is formed in the Second Type monocrystalline surface of described monocrystaline silicon solar cell, carrier mobility in Second Type monocrystalline silicon layer is improved, thus improves the conversion efficiency of solar cell.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.Described embodiment is only a part for embodiment of the present invention, instead of they are whole.When describing the embodiment of the present invention in detail, for ease of illustrating, schematic diagram can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, and it should not limit the scope of the invention at this.In addition, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.According to described embodiment, those of ordinary skill in the art's obtainable other execution modes all under without the need to the prerequisite of creative work, all belong to protection scope of the present invention.Therefore the present invention is not by the restriction of following public concrete enforcement.
Please refer to Fig. 1, be the schematic flow sheet of the manufacture method of monocrystaline silicon solar cell in the present embodiment, comprise:
Step S1: substrate is provided, described substrate is first kind monocrystalline silicon piece;
Step S2: carry out Second Type doping to the surface of described substrate, forms first kind monocrystalline silicon layer and the Second Type monocrystalline silicon layer being positioned at described first kind monocrystalline silicon layer upper surface;
Step S3: form the first stressor layers on the surface of described Second Type monocrystalline silicon layer;
Step S4: form anti-reflecting layer on described first stressor layers surface;
Step S5: form the first electrode on described anti-reflecting layer surface, form the second electrode at the lower surface of first kind monocrystalline silicon layer.
Please refer to Fig. 2, provide substrate 100, described substrate 100 is first kind monocrystalline silicon piece.
Concrete, described substrate 100 be p type single crystal silicon sheet or n type single crystal silicon sheet, and the substrate adopted in the present embodiment is p type single crystal silicon sheet, follow-uply on described p type single crystal silicon sheet, carries out N doping, formation N-type layer.In other embodiments of the invention, described substrate also can select n type single crystal silicon sheet, follow-uply on described n type single crystal silicon sheet, carries out P doping, forms P-type layer.
Described P type single-chip carries out boron ion doping when forming silicon chip to described silicon chip, can also be the doping described silicon chip being carried out to one or more ions in boron, gallium or indium.The concentration range of the Doped ions of described substrate is 1E10/cm
3~ 1E20/cm
3.
Please refer to Fig. 3, Fig. 1 be please refer to described substrate 100() surface carry out Second Type doping, form first kind monocrystalline silicon layer 101 and be positioned at the Second Type monocrystalline silicon layer 102 of described first kind monocrystalline silicon layer 101 upper surface.
Concrete, if described substrate 100 is p type single crystal silicon sheet, then carry out N-type doping to described substrate, the first kind monocrystalline silicon layer 101 of formation is P-type layer, is positioned at the Second Type monocrystalline silicon layer 102 of described first kind monocrystalline silicon layer 101 upper surface for N-type layer; If described substrate is n type single crystal silicon sheet, then carry out the doping of P type to described substrate, the first kind monocrystalline silicon layer 101 of formation is N-type layer, and the Second Type monocrystalline silicon layer 102 being positioned at described first kind monocrystalline silicon layer 101 upper surface is P-type layer.
In the present embodiment, described substrate 100 is p type single crystal silicon sheet, so carry out N-type doping to described substrate, the first kind monocrystalline silicon layer 101 of formation is P-type layer, and Second Type monocrystalline silicon layer 102 is N-type layer, and described P-type layer and N-type layer contact with each other, and forms PN junction.In the present embodiment, the ion of described N-type doping is phosphorus.Concrete grammar is: substrate is placed in tubular diffusion furnace quartz container, under 850 DEG C ~ 900 DEG C high temperature, use nitrogen to bring phosphorus oxychloride into quartz container, by phosphorus oxychloride and silicon chip reaction, obtains phosphorus atoms.Through after a while, phosphorus atoms enters the superficial layer of substrate from surrounding, and by the space between silicon atom to the diffusion of substrate internal penetration, forms the interface of N-type layer and P-type layer, namely PN junction.In other embodiments of the invention, described N-type Doped ions can also be one or more in phosphorus, arsenic or antimony.The concentration range of the Doped ions of described Second Type monocrystalline silicon layer 102 is 1E10/cm
3~ 1E20/cm
3, the PN junction depth of formation is 0.3 μm ~ 0.5 μm.The degree of depth of described N-type diffusion can not be too thick, because diffusion needs concentration gradient that impurity just can be made to spread in substrate.If described in the PN junction that diffuses to form too dark, can cause the degeneracy of energy level that surface is serious, what make solar cell opens drops, and battery efficiency declines.
In other embodiments of the invention, also using n type single crystal silicon sheet as substrate, P type ion doping can be carried out to described n type single crystal silicon sheet, form P-type layer.Described P type Doped ions comprises one or more ions in boron, gallium or indium.In the P-type layer that P type ion diffuse is formed, doping content scope is 1E10/cm
3~ 1E20/cm
3, the PN junction depth of formation is 0.3 μm ~ 0.5 μm.
In the present embodiment, because light induced electron does drift motion by first kind monocrystalline silicon layer 101 to Second Type monocrystalline silicon layer 102, photohole is taken exercises to first kind monocrystalline silicon layer 101 by Second Type monocrystalline silicon layer 102.Because electron mass is more much smaller than hole mass, so same time electronics is longer than the distance of movement of hole, if first kind monocrystalline silicon layer 101 thickness is less than the thickness of Second-Type monocrystalline silicon layer 102, hole does not also move to first kind monocrystalline silicon layer and will be fallen by compound, so the thickness of first kind monocrystalline silicon layer 101 is greater than the thickness of Second Type monocrystalline silicon layer 102.
Before Second Type doping is carried out to described substrate, first described substrate is cleaned, remove the impurity of substrate surface, thus avoid the performance of impurity effect monocrystaline silicon solar cell.
After the washing, matte can also be prepared to described substrate surface, carry out anisotropic etch with aqueous slkali to substrate surface, form matte at described substrate surface, described matte can improve the contact area of substrate surface and sunlight and reduce the reflection of sunlight.After preparing matte, then carry out Second Type doping.
Please refer to Fig. 4, form the first stressor layers 103 on described Second Type monocrystalline silicon layer 102 surface.
On described Second Type monocrystalline silicon layer 102 surface, form the first stressor layers 103, described first stressor layers 103 comprises transparent nonconducting film such as silicon nitride film, silicon oxide film.The formation process of described first stressor layers 103 can be plasma enhanced chemical vapor deposition (PECVD) or thermal chemical vapor deposition.
In the present embodiment, described Second Type monocrystalline silicon layer 102 is N-type layer, forms first stressor layers 103 with tensile stress on described N-type layer surface.In the present embodiment, described first stressor layers 103 is silicon nitride film, and the formation process of employing is plasma enhanced chemical vapor deposition, and wherein, reacting gas is NH
2and SiH
4, utilize the inert gases such as Ar as carrier gas, SiH
4and NH
2gas flow ratio be 0.1 ~ 4, reaction temperature is 200 DEG C ~ 500 DEG C, and reaction pressure is 100mTorr ~ 200mTorr, and provides a power to be the radio frequency power source of 10W ~ 100W, and frequency is 13.56MHz.The thickness of described first stressor layers 103 is 0.5nm ~ 100nm, has tensile stress, and tensile stress number range is 200MPa ~ 1000MPa.
Electronics in described Second Type monocrystalline silicon layer in 102, in the process to the first electrode flowing, makes stereo-motion in three-dimensional.Described first stressor layers 103 with tensile stress makes N-type layer be subject to the effect of the tensile stress in horizontal plane, the mobility of electronics in N-type layer is improved, thus reduce light induced electron after PN junction in N-type layer in Drift Process by the probability of compound, improve the electron amount at arrival first electrode place, improve total current density of solar cell, thus improve the conversion efficiency of solar cell.
In other embodiments of the invention, described Second Type monocrystalline silicon layer 102 also can be P-type layer, forms first stressor layers 103 with compression on described P-type layer surface.Described first stressor layers with compression comprises silicon nitride film or silicon oxide film, described in there is the first stressor layers of compression formation process comprise plasma enhanced chemical vapor deposition or thermal chemical vapor deposition.In one embodiment of the invention, described in there is compression the first stressor layers be silicon nitride film, the formation process of employing is plasma enhanced chemical vapor deposition, and wherein, reacting gas is NH
2and SiH
4, utilize the inert gases such as Ar as carrier gas, SiH
4and NH
2gas flow ratio be 0.1 ~ 4, reaction temperature is 200 DEG C ~ 500 DEG C, and reaction pressure is 100mTorr ~ 200mTorr, and provide a power to be the low frequency power source of 10W ~ 100W, frequency is 100KHz.The thickness of described first stressor layers is 0.5nm ~ 100nm, has compression, and the number range of compression is 200MPa ~ 1000MPa.Hole in described Second Type monocrystalline silicon layer in Second Type monocrystalline silicon layer to first electrode flowing process in, stereo-motion is made in three-dimensional, described first stressor layers with compression, P-type layer is made to be subject to the effect of the compression in horizontal plane, the mobility of photohole in P-type layer is improved, thus reduce photohole after PN junction, in P-type layer in Drift Process by the probability of compound, improve the number of cavities at arrival first electrode place, thus improve the conversion efficiency of solar cell.
In other embodiments of the invention, the first stressor layers can also be formed in first kind monocrystalline surface, the second stressor layers is formed at the lower surface of Second Type monocrystalline silicon layer, first kind monocrystalline silicon layer and Second Type monocrystalline silicon layer is made all to be subject to effect of stress, improve the mobility of first kind monocrystalline silicon layer and Second Type monocrystalline silicon layer carriers simultaneously, improve the conversion efficiency of solar cell further.
Please refer to Fig. 5, form anti-reflecting layer 104 on described first stressor layers 103 surface.
Described anti-reflecting layer 104 is the transparent material of low-refraction coefficient, such as TiO
2, SiN, SiO, Al
2o
3, SiO
2or CeO
2deng.Concrete, the methods such as PECVD, magnetron sputtering or electron beam evaporation can be adopted to form described anti-reflecting layer 104, and the thickness range of described anti-reflecting layer 104 is
In other embodiments of the invention, the silicon nitride film adopted due to described first stressor layers 103 or silicon oxide film have lower specific refractivity, the reflection to sunlight can be reduced, as the anti-reflecting layer of Second Type monocrystalline surface, solar cell can be improved to the absorptivity of sunlight.So can additionally form described anti-reflecting layer 104 again, thus processing step can be reduced.
In other embodiments of the invention, also first anti-reflecting layer can be formed on Second Type monocrystalline silicon layer 102 surface, and then form the first stressor layers on described anti-reflecting layer surface, described anti-reflecting layer 104 is except antireflecting effect, the effect of passivated surface can also be played Second Type monocrystalline surface, reduce the recombination rate of charge carrier.Because the thickness of described anti-reflecting layer is lower, so Second Type monocrystalline silicon layer can be subject to the effect of stress of the first stressor layers equally, improve the mobility of charge carrier.
Please refer to Fig. 6, form the first electrode 105 on described anti-reflecting layer 104 surface, form the second electrode 106 at the lower surface of first kind monocrystalline silicon layer 101.
The concrete technology forming described first electrode 105 and the second electrode 106 is known for those skilled in the art, does not repeat them here.
According to above-mentioned manufacture method, embodiments of the invention additionally provide a kind of monocrystaline silicon solar cell adopting above-mentioned manufacture method to be formed.
Please refer to Fig. 6, is the generalized section of the monocrystaline silicon solar cell that the embodiment of the present invention provides.
Concrete, comprising: first kind monocrystalline silicon layer 101 and the Second Type monocrystalline silicon layer 102 being positioned at described first kind monocrystalline silicon layer 101 upper surface; Be positioned at first stressor layers 103 on described Second Type monocrystalline silicon layer 102 surface; There is described in being positioned at the anti-reflecting layer 104 on the first stressor layers 103 surface of tensile stress; Be positioned at first electrode 105 on described anti-reflecting layer 104 surface and be positioned at the second electrode 106 of described first kind monocrystalline silicon layer 101 lower surface.
Described first kind monocrystalline silicon layer 101 is P-type layer, and ion doping concentration is 1E10/cm
3~ 1E20/cm
3, Doped ions comprises one or more in boron, gallium or indium; Described Second Type monocrystalline silicon layer 102 is N-type layer, and ion doping concentration is 1E10/cm
3~ 1E20/cm
3, Doped ions comprises one or more in phosphorus, arsenic or antimony.Described first stressor layers 103 comprises silicon nitride film or silicon oxide film, and thickness is 0.5nm ~ 100nm, and the number range of stress is 200MPa ~ 1000MPa.The material of described anti-reflecting layer is TiO
2, SiN, SiO, Al
2o
3, SiO
2or CeO
2.In other embodiments of the invention, described anti-reflecting layer can between the first stressor layers 103 Second Type monocrystalline silicon layer 102.
In other embodiments of the invention, between the lower surface of described first kind monocrystalline silicon layer 101 and the second electrode 106, there is the second stressor layers, first kind monocrystalline silicon layer and Second Type monocrystalline silicon layer is made all to be subject to effect of stress, improve the mobility of first kind monocrystalline silicon layer and Second Type monocrystalline silicon layer carriers simultaneously, improve total current density of solar cell, improve the conversion efficiency of solar cell further.
By the explanation of above-described embodiment, professional and technical personnel in the field should be able to be made to understand the present invention better, and can reproduce and use the present invention.Those skilled in the art can be apparent to above-described embodiment do various changes and modifications when not departing from the spirit and scope of the invention according to principle described herein.Therefore, the present invention should not be understood to be limited to above-described embodiment shown in this article, and its protection range should be defined by appending claims.
Claims (18)
1. a manufacture method for monocrystaline silicon solar cell, is characterized in that, comprising:
There is provided substrate, described substrate is the monocrystalline silicon piece of first kind doping;
Second Type doping is carried out to the first surface of described substrate, forms first kind monocrystalline silicon layer and be positioned at the Second Type monocrystalline silicon layer of first surface of described first kind monocrystalline silicon layer;
Described Second Type monocrystalline silicon layer forms the first stressor layers;
The second stressor layers is formed at the second surface of described first kind monocrystalline silicon layer;
Form the first electrode on described first stressor layers surface, form the second electrode at the second surface of described first kind monocrystalline silicon layer.
2. the manufacture method of monocrystaline silicon solar cell according to claim 1, is characterized in that, described first kind monocrystalline silicon layer is P-type layer, and described Second Type monocrystalline silicon layer is N-type layer, and described first stressor layers has tensile stress.
3. the manufacture method of monocrystaline silicon solar cell according to claim 1, is characterized in that, described first kind monocrystalline silicon layer is N-type layer, and described Second Type monocrystalline silicon layer is P-type layer, and described first stressor layers has compression.
4. the manufacture method of monocrystaline silicon solar cell according to claim 2, is characterized in that, described in there is the first stressor layers of tensile stress formation method comprise: using plasma strengthens chemical vapor deposition method, wherein, NH
2and SiH
4as reacting gas, inert gas is as carrier gas, and reaction temperature is 200 DEG C ~ 500 DEG C, and reaction pressure is 100mTorr ~ 200mTorr, and provides a power to be 10W ~ 100W, and frequency is the radio frequency power source of 10MHz ~ 15MHz.
5. the manufacture method of monocrystaline silicon solar cell according to claim 3, is characterized in that, described in there is the first stressor layers of compression formation method comprise: using plasma strengthens chemical vapor deposition method, wherein, NH
2and SiH
4as reacting gas, inert gas is as carrier gas, and reaction temperature is 200 DEG C ~ 500 DEG C, and reaction pressure is 100mTorr ~ 200mTorr, and provides a power to be 10W ~ 100W, and frequency is the low frequency power source of 50KHz ~ 500kHz.
6. the manufacture method of monocrystaline silicon solar cell according to claim 1, is characterized in that, described first stressor layers comprises silicon nitride film or silicon oxide film.
7. the manufacture method of monocrystaline silicon solar cell according to claim 1, is characterized in that, the formation process of described first stressor layers comprises thermal chemical vapor deposition or plasma enhanced chemical vapor deposition.
8. the manufacture method of monocrystaline silicon solar cell according to claim 1, is characterized in that, the thickness of described first stressor layers is 0.5nm ~ 100nm, and the number range of the stress of described first stressor layers is 200MPa ~ 1000MPa.
9. the manufacture method of monocrystaline silicon solar cell according to claim 1, is characterized in that, also comprises: after the first stressor layers surface forms anti-reflecting layer, then forms the first electrode on described anti-reflecting layer surface.
10. the manufacture method of monocrystaline silicon solar cell according to claim 1, is characterized in that, also comprises: after Second Type monocrystalline surface forms anti-reflecting layer, then forms the first stressor layers on described anti-reflecting layer surface.
The manufacture method of 11. monocrystaline silicon solar cells according to claim 1, is characterized in that, in first kind monocrystalline silicon layer and Second Type monocrystalline silicon layer, the scope of Doped ions concentration is 1E10/cm
3~ 1E20/cm
3.
12. 1 kinds of monocrystaline silicon solar cells, is characterized in that, comprising:
First kind monocrystalline silicon layer and the Second Type monocrystalline silicon layer being positioned at described first kind monocrystalline silicon layer first surface;
Be positioned at the first stressor layers on described Second Type monocrystalline silicon layer;
Be positioned at the second stressor layers of the second surface of described first kind monocrystalline silicon layer;
Be positioned at first electrode on described first stressor layers surface;
Be positioned at the second electrode of the second surface of described first kind monocrystalline silicon layer.
13. monocrystaline silicon solar cells according to claim 12, is characterized in that, described first kind monocrystalline silicon layer is P-type layer, and described Second Type monocrystalline silicon layer is N-type layer, and described first stressor layers has tensile stress.
14. monocrystaline silicon solar cells according to claim 12, is characterized in that, described first kind monocrystalline silicon layer is N-type layer, and described Second Type monocrystalline silicon layer is P-type layer, and described first stressor layers has compression.
15. monocrystaline silicon solar cells according to claim 12, is characterized in that, described first stressor layers comprises silicon nitride film or silicon oxide film.
16. monocrystaline silicon solar cells according to claim 12, is characterized in that, the thickness of described first stressor layers is 0.5nm ~ 100nm, and the number range of the stress of described first stressor layers is 200MPa ~ 1000MPa.
17. monocrystaline silicon solar cells according to claim 12, is characterized in that, also comprise: the anti-reflecting layer between described first electrode and the first stressor layers or the anti-reflecting layer between described Second Type monocrystalline silicon layer and the first stressor layers.
18. monocrystaline silicon solar cells according to claim 12, is characterized in that, in first kind monocrystalline silicon layer and Second Type monocrystalline silicon layer, the scope of Doped ions concentration is 1E10/cm
3~ 1E20/cm
3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210529746.2A CN103107237B (en) | 2012-12-06 | 2012-12-06 | Monocrystaline silicon solar cell and preparation method thereof |
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| CN1734793A (en) * | 2005-09-02 | 2006-02-15 | 中国科学院研究生院 | Nano silicon/monocrystalline silicon heterojunction solar cell and preparation method thereof |
| CN101820008A (en) * | 2009-12-15 | 2010-09-01 | 江苏华创光电科技有限公司 | Monocrystalline film solar cell and preparation method thereof |
| CN102017165A (en) * | 2008-02-15 | 2011-04-13 | 罗伯特.博世有限公司 | Method for the production of monocrystalline n-silicon solar cells, and solar cell produced according to such a method |
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| GB0114896D0 (en) * | 2001-06-19 | 2001-08-08 | Bp Solar Ltd | Process for manufacturing a solar cell |
| TWI423466B (en) * | 2009-12-30 | 2014-01-11 | Nat Univ Chung Hsing | Defective method |
| CN102569497B (en) * | 2010-12-30 | 2015-02-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for forming anti-reflecting film on base plate as well as solar cell and preparation method thereof |
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| CN1734793A (en) * | 2005-09-02 | 2006-02-15 | 中国科学院研究生院 | Nano silicon/monocrystalline silicon heterojunction solar cell and preparation method thereof |
| CN102017165A (en) * | 2008-02-15 | 2011-04-13 | 罗伯特.博世有限公司 | Method for the production of monocrystalline n-silicon solar cells, and solar cell produced according to such a method |
| CN101820008A (en) * | 2009-12-15 | 2010-09-01 | 江苏华创光电科技有限公司 | Monocrystalline film solar cell and preparation method thereof |
| CN102789986A (en) * | 2011-05-20 | 2012-11-21 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor apparatus and manufacturing method thereof |
| CN202120962U (en) * | 2011-05-24 | 2012-01-18 | 上海神舟新能源发展有限公司 | Selective emitter single-crystalline silicon solar cell |
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