CN202955903U - Carbon-film-supported solar selective absorption film system - Google Patents

Carbon-film-supported solar selective absorption film system Download PDF

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Publication number
CN202955903U
CN202955903U CN2012206534691U CN201220653469U CN202955903U CN 202955903 U CN202955903 U CN 202955903U CN 2012206534691 U CN2012206534691 U CN 2012206534691U CN 201220653469 U CN201220653469 U CN 201220653469U CN 202955903 U CN202955903 U CN 202955903U
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film
carbon
solar
solar selective
selective absorption
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陆卫
陈飞良
王少伟
俞立明
刘星星
郭少令
陈效双
王晓芳
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Shanghai Tephys Optoelectronics Co ltd
Shanghai Institute of Technical Physics of CAS
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Shanghai Tephys Optoelectronics Co ltd
Shanghai Institute of Technical Physics of CAS
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/40—Solar thermal energy, e.g. solar towers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/20—Climate change mitigation technologies for sector-wide applications using renewable energy

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Abstract

The utility model discloses a carbon-film-supported solar selective absorption film system. The carbon-film-supported solar selective absorption film system comprises a titanium oxynitride thin film, an amorphous carbon thin film, a silicon nitride thin film and a silicon dioxide thin film, which are coated on a metal substrate. According to the carbon-film-supported solar selective absorption film system disclosed by the utility model, the amorphous carbon film is introduced, so that the solar absorption rate of the adsorption film system is as high as 98.0%, and the emissivity of the adsorption film system is as low as 2.3%; and moreover, the solar selective absorption film system has extremely high photo-thermal conversion efficiency and heat-collecting efficiency, which are better than the international advanced level, and can be widely applied to various solar photo-thermal converters. Compared with a regular flat plate collector heat-absorption film, the carbon-film-supported solar selective absorption film has the advantages that the solar absorption rate is further improved after the amorphous carbon-supported heat absorption film is additionally arranged; and meanwhile, the extremely low emissivity of the carbon-film-supported solar selective absorption film is kept. The carbon-film-supported solar selective absorption film disclosed by the utility model can be continuously coated on a large-area substrate by adopting an industrial magnetron sputtering preparation method, so that the low-cost high-efficiency production is achieved.

Description

The solar selective absorbing film system that a kind of carbon film is auxiliary
Technical field
This patent relates to flat-plate solar collector absorption film, photo-thermal converting material field, specifically refers to the solar selective absorbing film system that a kind of carbon film is auxiliary.
Technical background
Along with the high speed development of modern social economy, the mankind are increasing to the demand of the energy.Yet the traditional energy storage levels such as coal, oil, natural gas constantly reduce, day by day in short supply, cause rising steadily of price, the problem of environmental pollution that conventional fossil fuel causes simultaneously is also further serious, and these are all limiting the development of society and human life quality's raising greatly.Energy problem has become one of distinct issues of contemporary world.Thereby seek the focus that the new energy, particularly free of contamination clean energy resource have become present people research.
Solar energy is a kind of inexhaustible clean energy resource, and stock number is huge, and the annual solar radiant energy total amount received of earth surface is 1 * 10 18KWh is more than 10,000 times of world's year consumption gross energy.Countries in the world are important using the utilization of solar energy as new energy development all, and the Chinese government also clearly proposes to want the develop actively new forms of energy at Report on the Work of the Government already, and wherein the utilization of solar energy is especially in occupation of prominent position.Yet because solar radiation arrives tellurian energy density little (every square metre approximately a kilowatt), and be again discontinuous, this brings certain difficulty to large-scale the exploitation.Therefore, in order extensively to utilize solar energy, not only want the problem on technical solution, and must be able to compete mutually with conventional energy resource economically.
The utilization of solar energy mainly contains photo-thermal conversion, photoelectric conversion, photochemistry and changes this three kinds of forms.Than photovoltaic industry and the sky high cost of photochemistry conversion and low energy conversion efficiency, it is that a kind of energy conversion efficiency and utilization rate solar energy high and with low cost, that can extensively promote in the whole society utilizes mode that solar heat transforms.In solar energy heat utilization device, key is by the solar radiant energy energy transform into heat energy, to realize that the device of this conversion is called solar thermal collector.
Current solar thermal utilization is the most active, and formed industry surely belong to solar water heater and solar energy thermal-power-generating.Wherein, the solar water heater technology is very ripe, and has formed industry, with good performance, constantly impacts electric heater market and gas heater market.At present, the flat and vacuum pipe solar water heater system of world solar markets is also deposited, but shared market share difference.The photo-thermal switching rate is fast, the thermal efficiency is high, daylighting area is large owing to having for flat plate collector, simple in structure, reliable, cost is suitable, also there are the characteristics such as bearing capacity is strong, have and build a series of advantages such as perfect integrated combination, in developed countries such as Europe, the United States, Australia, its occupation rate of market reaches more than 90%.And, in China, but completely contradict, take vacuum tube collector as main, vacuum tube accounts for 86%.After nineteen ninety, China becomes the production and use big country of solar water heater gradually, and annual production in 2010 is about 4,900 ten thousand ㎡, and wherein, the vacuum tube collector area is 4,600 ten thousand ㎡, increases by 15%.And the flat plate collector area is only 3,000,000 ㎡, but growth rate is 50%, and very large development potentiality is arranged.Especially aspect the house of solar thermal collector and architecture-integral, flat plate collector can be used as large tracts of land set roof thermal modules, becomes a member of building, has both reduced cost, has improved again globality and the aesthetic property of building.
No matter the solar thermal collector of which kind of form and structure, all will have an absorption piece that is used for absorbing solar radiation, and the heat-radiating properties of this parts sorbent surface plays an important role to the hot property of heat collector.The physical quantity that characterizes the sorbent surface heat-radiating properties is absorptance and heat emission ratio, and the former characterizes the ability that absorbs solar radiant energy, and the latter characterizes the ability of emission radiant energy at self temperature.
As everyone knows, solar radiation has a very wide wave band and distributes, but its radiant energy mainly concentrates on visible ray and near infrared band scope (0.3～2.5 μ m).Therefore, in order to improve the thermal efficiency of solar heat collector, we require the absorption piece surface to have higher absorptance (usually meaning with α) in the solar spectrum scope of wavelength 0.3～2.5 μ m.And for the heated body in a practical application, in the infrared range of spectrum that its heat radiation concentration of energy is 3.0～30.0 μ m at wavelength, in order to reduce heat loss, prevent that the shortwave energy absorbed from falling with the radiation of long wave form again, will keep alap heat emission than (usually meaning with ε) in the heat radiation wave band.According to Planck blackbody radiation law and Kirchhoff's law, when thermal balance, any object equals the emissivity of synthermal lower this object to the absorptance of black body radiation.Therefore, make object keep alap heat emission ratio in the heat radiation wave band, be equivalent to make object to keep alap absorptivity in the heat radiation wave band.Sum up, will make exactly sorbent surface when absorbing solar radiation to greatest extent, reduce as far as possible its radiation heat loss, generally, exactly will " that advances be many, and what go out lacks ".Have this selective assimilation effect surface be called " selective solar spectrum sorbent surface " or " coating for selective absorption of sunlight spectrum ".Obviously, this coating two important performance parameter α, ε play vital effect to the photo-thermal conversion efficiency that improves heat collector.
Current published absorbing film photo-thermal conversion efficiency still has much room for improvement, as: the disclosed TiN of patent publication No. CN1594644A xO yIn film, the absorptivity maximum only has 94%, emissivity minimum up to 7%; The disclosed TiNO of patent publication No. CN 101793437A, TiAlNO, AlN, AlNO and Al 2O 3Multilayer complex films is that absorptivity is greater than 93%, emissivity reaches 4%; Patent publication No. CN101240944A and the disclosed TiN of CN 201196495Y xO yFilm is adding silica SiO 2After antireflective film, absorptivity reaches 96%, and emissivity is lower than 4%.
With respect to the solar energy decalescence films of having reported, the auxiliary solar selective absorbing film of the disclosed carbon film of this patent ties up under the prerequisite that keeps low infrared emissivity, there is higher solar absorptance, be better than international most advanced level, and film system and preparation method and suitability for industrialized production fully compatible, be easy to realize industrialization.
Summary of the invention
This patent discloses the auxiliary solar selective absorbing film system of a kind of carbon film.Aim to provide high-absorbility, low-launch-rate that a kind of preparation method is applicable to suitability for industrialized production, be particularly suitable for the commercial applications of solar thermal utilization aspect the architecture-integral product, promote being widely used of the photo-thermal products such as solar water heater, solar airconditioning.
The auxiliary solar selective absorbing film architecture of this carbon film as shown in Figure 1, is followed successively by main absorbing film titanium oxynitrides 2 on metal substrate 1, secondary absorbing film amorphous carbon 3, and silicon nitride film 4 and silica membrane 5, wherein:
Described metal substrate 1 is the Cu paillon foil, the Al paillon foil, Al paillon foil, Ni paillon foil or on the stainless steel paillon foil deposition one deck Cu film, or the Ag film of the infrared high reflection of deposition one deck on Al paillon foil, Ni paillon foil, stainless steel paillon foil or Cu paillon foil; Preferably, adopt the Ag film of the infrared high reflection of deposition one deck on the Cu paillon foil;
Described main absorbing film is titanium oxynitrides (2) TiN xO yFilm, the atomic ratio scope of Ti, N, tri-kinds of elements of O is Ti:N:O=1:0.5 ~ 1:0.5 ~ 2, thickness is 50nm～150nm.
Described secondary absorbing film amorphous carbon (3) thickness is 20nm～100nm;
Described silicon nitride film (4) thickness is 20nm～60nm;
Described silica membrane (5) thickness is 50nm～150nm.
Described silica membrane (5) thickness is 50nm～150nm.
The absorbing film system of this patent is with TiN xO yFilm, as main absorbed layer, is usingd amorphous c film as secondary absorbing membranous layer, with Si 3N 4, SiO 2Two kinds of films are as protective layer and anti-reflection layer.Due to TiN xO yThis has a projection that reflectivity is higher in 400～500nm wave band film, so usually be blue, is called as blue film.Secondary absorbing membranous layer amorphous c film add the solar energy that can absorb 400～500nm wave band, thereby further improve the absorptivity of compound film system.
Simultaneously, due to amorphous carbon, Si 3N 4And SiO 2The refractive index of three kinds of thin-film materials is successively decreased successively, therefore has good gradual change anti-reflection effect, thereby greatly reduces the compound film system surface reflectivity, improves the absorptivity of film system.And Si 3N 4Rete is material very stable under a kind of superhard wear, high temperature, and the protective layer as film system, can keep TiN xO yThe composition ratio that absorbing membranous layer is stable, increasing film is hardness and wearability, can greatly improve weatherability and the stability of absorbing film, thereby improves the service life of heat collector.
The auxiliary solar selective absorbing film system of the disclosed carbon film of this patent can be coated with continuously by industrialization magnetron sputtering preparation method on the large-area metal substrate.The specific targets method is as follows:
At first, be coated with TiN on metal substrate xO yFilm is as the main absorbing film of film system.Can adopt the metal Ti alloy target material, carry out the reactive sputtering plated film with nitrogen and two kinds of reacting gas of oxygen, by air pressure ratio or the flow of controlling argon gas, nitrogen, three kinds of gases of oxygen, recently control TiN simultaneously xO yThe ratio of component of three kinds of elements in film; Also can adopt the TiN ceramic target, the oxygen of usining carries out the reactive sputtering plated film as reacting gas, by air pressure ratio or the flow of controlling argon gas, two kinds of gases of oxygen, recently controls TiN xO yThe ratio of component of three kinds of elements in film; Can also adopt the TiN sintered by predefined Ti, N, tri-kinds of element atomic ratios of O xO yCeramic target, directly carry out sputter coating.Thickness range is 50nm～150nm, too thinly can reduce absorptivity, too thickly can increase emissivity again.
Secondly, at TiN xO yBe coated with the secondary absorbing film of amorphous carbon film as film system on film.The preparation of amorphous carbon film adopts the C target to carry out sputter and is coated with, and thickness range is 20nm～100nm.
Again, adopt the Si target on the amorphous carbon film upper strata, the nitrogen of usining carries out reactive sputtering as reacting gas; Also can adopt Si 3N 4Ceramic target directly carries out sputter coating, and thickness range is 20nm～60nm.
Finally, at Si 3N 4Be coated with one deck SiO on film 2Film.SiO 2The preparation of film can adopt the Si target, and the oxygen of usining carries out reactive sputtering as reacting gas; Also can adopt SiO 2Ceramic target directly carries out sputter coating.
The absorbing film of this patent is that advantage exists:
1, the solar energy thermal conversion efficiency is high.After this film ties up to and added the auxiliary absorption film of amorphous C, the solar absorptance of film system is significantly increased, and up to 98.0%, emissivity can be low to moderate 2.3%.With reported flat plate collector absorption film, compare, absorptivity is higher, and still keeps very low emissivity.
2, owing to having used Si very stable under superhard wear and high temperature 3N 4Material, than other published absorbing films, greatly improved weatherability and stability, thereby improved the service life of heat collector.
3, the absorbing film of this patent system can be coated with continuously by industrialization magnetron sputtering preparation method on the large tracts of land substrate, realizes low-cost high-efficiency production.There are the characteristics of photo-thermal conversion efficiency height and long service life, can be widely used in the heat collector that solar energy optical-thermal is changed.
The accompanying drawing explanation
The solar selective absorbing film architecture schematic diagram that the carbon film that accompanying drawing 1 is this patent is auxiliary, wherein:
1 is metal substrate;
2 is the titanium oxynitrides film;
3 is amorphous c film;
4 is silicon nitride film;
5 is silica membrane.
Accompanying drawing 2 is 1 reflectance spectrum for the auxiliary solar selective absorbing film of carbon film of this patent.
Accompanying drawing 3 is 2 reflectance spectrum for the auxiliary solar selective absorbing film of carbon film of this patent.
Accompanying drawing 4 is 3 reflectance spectrum for the auxiliary solar selective absorbing film of carbon film of this patent.
The specific embodiment
For the content, technical scheme and the advantage that make this patent is clearer, further set forth this patent below in conjunction with specific embodiment, these embodiment are only for this patent is described, and this patent is not limited only to following examples.The solar selective absorbing film architecture auxiliary to the carbon film of this patent below in conjunction with accompanying drawing elaborates:
Embodiment 1:
The auxiliary solar selective absorbing film of a kind of carbon film is 1 and preparation method thereof.
As shown in Figure 1, each thicknesses of layers is composed as follows for this absorbing film architecture:
Cu paper tinsel substrate/TiN xO yFilm (50nm)/amorphous c film (100nm)/Si 3N 4Film (20nm)/SiO 2Film (86nm).
This film be reflectance spectrum as shown in Figure 2, the technical indicator of this film system is as follows:
The absorptivity of testing this film system according to GB GB/T6424-2007 and GB/T4271-2007 reaches 97.8%, emissivity 3.2%.
The technological parameter of the present embodiment magnetron sputtering apparatus used of take is example, and the preparation method of this absorbing film system is as follows:
At first, use magnetron sputtering method, take the Cu paper tinsel as substrate, adopt the TiN sintered by predefined Ti, N, tri-kinds of element atomic ratios of O xO yPottery is target, is coated with one deck TiN on the Cu film xO yFilm, thickness is 50nm.In the present embodiment target used, three kinds of element atomic ratios are Ti:N:O=1:0.8:1.2, and sputtering power is 1kW, IF-FRE 30kHz, and the Ar throughput is 35sccm;
Again, take C as target, pass into the sputter of Ar gas and prepare amorphous c film, sputtering power is 1kW, rf frequency 40kHz, and Ar throughput 100sccm, during by the control reactive sputtering, the chien shih film thickness grows into 100nm;
Then, take Si as target, pass into N gas and prepare Si as reacting gas 3N 4Film, reactive sputtering power 1kW, IF-FRE 30kHz, Ar throughput 80sccm, N throughput 40sccm, during by the control reactive sputtering, the chien shih film thickness grows into 20nm;
Finally, continue to take Si as target, pass into O gas and prepare SiO as reacting gas 2Film, reactive sputtering power 1kW, IF-FRE 40kHz, Ar throughput 200sccm, O throughput 20sccm, during by the control reactive sputtering, the chien shih film thickness grows into 86nm.
Embodiment 2:
The auxiliary solar selective absorbing film of a kind of carbon film is 2 and preparation method thereof.
As shown in Figure 1, each thicknesses of layers is composed as follows for this absorbing film architecture:
The Cu paper tinsel substrate/TiN of plating Ag film xO yFilm (96nm)/amorphous c film (49nm)/Si 3N 4Film (25nm)/SiO 2Film (89nm).
This film be reflectance spectrum as shown in Figure 3, the technical indicator of this film system is as follows:
The absorptivity of testing this film system according to GB GB/T6424-2007 and GB/T4271-2007 reaches 98.0%, emissivity 2.3%.
The technological parameter of the present embodiment magnetron sputtering apparatus used of take is example, and the preparation method of this absorbing film system is as follows:
At first, use magnetron sputtering method, be coated with the infrared high reflection Ag film of one deck on the Cu paper tinsel, thickness 100nm;
Secondly, in the Cu paper tinsel substrate of plating Ag film, take metal Ti as target, Ar gas is sputter gas, passes into N gas, O gas and prepares the TiN of content gradually variational as reacting gas xO yFilm.Prepare the TiN of content gradually variational than temporal evolution by flow-rate ratio or the air pressure of controlling Ar gas, N gas, three kinds of gases of O gas xO yThe film film, during by the control reactive sputtering, the chien shih film thickness grows into 96nm.Sputtering power is 1kW, IF-FRE 30kHz, and in sputter procedure, the Ar throughput is fixed as 35sccm, and the N throughput is successively decreased with sputtering time gradually from 10sccm～5sccm, and the O throughput increases progressively with sputtering time gradually from 2sccm～5sccm.The gradual change TiN obtained under this technological parameter xO yFilm composition is Ti:N:O=1:0.5 ~ 1:1 ~ 2 than with the varied in thickness scope;
Again, take C as target, pass into the sputter of Ar gas and prepare amorphous c film, reactive sputtering power 1kW, IF-FRE 40kHz, the Ar throughput is 100sccm, during by the control reactive sputtering, the chien shih film thickness grows into 49nm;
Then, with Si 3N 4Ceramic target carries out magnetron sputtering, sputtering power 2kW, and IF-FRE 100kHz, the Ar throughput is 100sccm.During by the control reactive sputtering, the chien shih film thickness grows into 25nm;
Finally, with SiO 2Ceramic target carries out magnetron sputtering, sputtering power 2kW, and IF-FRE 100kHz, the Ar throughput is 200sccm.During by the control reactive sputtering, the chien shih film thickness grows into 89nm.
This absorbing film is that emissivity is low to moderate 2.3% due to the Cu paper tinsel substrate of having used plating Ag film.And due to Si 3N 4And SiO 2The sputter procedure of film is all used ceramic target, and technology controlling and process is simple.
Embodiment 3:
The auxiliary solar selective absorbing film of a kind of carbon film is 3 and preparation method thereof.
As shown in Figure 1, each thicknesses of layers is composed as follows for this absorbing film architecture:
Al paper tinsel substrate/TiN xO yFilm (150nm)/amorphous c film (20nm)/Si 3N 4Film (60nm)/SiO 2Film (50nm).
This film be reflectance spectrum as shown in Figure 3, the technical indicator of this film system is as follows:
The absorptivity of testing this film system according to GB GB/T6424-2007 and GB/T4271-2007 reaches 97.2%, emissivity 3.6%.
The technological parameter of the present embodiment magnetron sputtering apparatus used of take is example, and the preparation method of this absorbing film system is as follows:
At first, use magnetron sputtering method, take the Al paper tinsel as substrate, take ceramic TiN as target, Ar gas is sputter gas, passes into O gas and prepares the different multilayer TiN of each layer component as reacting gas xO yFilm.Regulate TiN by the ratio of regulating between Ar gas, two kinds of gases of O gas xO yThe composition of three kinds of elements ratio in film.The present embodiment adopts three layers of TiN xO yFilm, sputtering power is 1kW, IF-FRE 30kHz.Ground floor TiN xO yFilm adopts Ar throughput 30sccm, O throughput 3sccm, and thickness 70nm, film composition is than being Ti:N:O=1:0.8:1.2; Second layer TiN xO yFilm adopts Ar throughput 35sccm, O throughput 4sccm, and thickness 50nm, film composition is than being Ti:N:O=1:0.7:1.4; The 3rd layer of TiN xO yFilm adopts Ar throughput 40sccm, O throughput 6sccm, and thickness 30nm, film composition is than being Ti:N:O=1:0.5:1.6.
Again, take C as target, pass into the sputter of Ar gas and prepare amorphous c film, sputtering power is 1kW, rf frequency 40kHz, and Ar throughput 100sccm, during by the control reactive sputtering, the chien shih film thickness grows into 20nm;
Then, take Si as target, pass into N gas and prepare Si as reacting gas 3N 4Film, reactive sputtering power 1kW, IF-FRE 30kHz, Ar throughput 80sccm, N throughput 40sccm, during by the control reactive sputtering, the chien shih film thickness grows into 60nm;
Finally, continue to take Si as target, pass into O gas and prepare SiO as reacting gas 2Film, reactive sputtering power 1kW, IF-FRE 40kHz, Ar throughput 200sccm, O throughput 20sccm, during by the control reactive sputtering, the chien shih film thickness grows into 50nm.
This film system is owing to using the Al paper tinsel to make substrate, with low cost.

Claims (1)

1. the auxiliary solar selective absorbing film of carbon film is, it is characterized in that: described solar selective absorbing film architecture is: be followed successively by main absorbing film titanium oxynitrides (2) on metal substrate (1), secondary absorbing film amorphous carbon (3), silicon nitride film (4) and silica membrane (5), wherein:
Described metal substrate (1) is the Cu paillon foil, the Al paillon foil, Al paillon foil, Ni paillon foil or on the stainless steel paillon foil deposition one deck Cu film, or the Ag film of the infrared high reflection of deposition one deck on Al paillon foil, Ni paillon foil, stainless steel paillon foil or Cu paillon foil; Preferably, adopt the Ag film of the infrared high reflection of deposition one deck on the Cu paillon foil;
Described main absorbing film is titanium oxynitrides (2) TiN xO yFilm, the atomic ratio scope of Ti, N, tri-kinds of elements of O is Ti:N:O=1:0.5 ~ 1:0.5 ~ 2, thickness is 50nm～150nm;
Described secondary absorbing film amorphous carbon (3) thickness is 20nm～100nm;
Described silicon nitride film (4) thickness is 20nm～60nm;
Described silica membrane (5) thickness is 50nm～150nm.
CN2012206534691U 2012-11-30 2012-11-30 Carbon-film-supported solar selective absorption film system Withdrawn - After Issue CN202955903U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103017384A (en) * 2012-11-30 2013-04-03 中国科学院上海技术物理研究所 Carbon film auxiliary solar energy selective absorption film system and preparation method thereof
CN106555177A (en) * 2015-09-29 2017-04-05 淄博环能海臣环保技术服务有限公司 One kind thermally decomposes to generate high temperature resistant selective absorbing functional membrane

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103017384A (en) * 2012-11-30 2013-04-03 中国科学院上海技术物理研究所 Carbon film auxiliary solar energy selective absorption film system and preparation method thereof
CN106555177A (en) * 2015-09-29 2017-04-05 淄博环能海臣环保技术服务有限公司 One kind thermally decomposes to generate high temperature resistant selective absorbing functional membrane
WO2017054781A1 (en) * 2015-09-29 2017-04-06 淄博环能海臣环保技术服务有限公司 High-temperature-resistant selective absorption functional membrane generated by thermal decomposition

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