CN103017384A - Carbon film auxiliary solar energy selective absorption film system and preparation method thereof - Google Patents

Carbon film auxiliary solar energy selective absorption film system and preparation method thereof Download PDF

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CN103017384A
CN103017384A CN2012105072083A CN201210507208A CN103017384A CN 103017384 A CN103017384 A CN 103017384A CN 2012105072083 A CN2012105072083 A CN 2012105072083A CN 201210507208 A CN201210507208 A CN 201210507208A CN 103017384 A CN103017384 A CN 103017384A
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paillon foil
preparation
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CN103017384B (en
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陆卫
陈飞良
王少伟
俞立明
刘星星
郭少令
陈效双
王晓芳
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Shanghai Tephys Optoelectronics Co ltd
Shanghai Institute of Technical Physics of CAS
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Shanghai Tephys Optoelectronics Co ltd
Shanghai Institute of Technical Physics of CAS
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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    • Y02E10/40—Solar thermal energy, e.g. solar towers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

The invention discloses a carbon film auxiliary solar energy selective absorption film system and a preparation method thereof. The absorption film system comprises a titanium oxynitride thin film, an amorphous carbon thin film, a silicon nitride thin film and a silicon dioxide thin film, which are plated on a metal substrate. Through introducing the amorphous carbon thin film, the solar energy absorption rate of the absorption film system is up to 98.0 percent, the emission rate can be reduced to 2.3 percent; and the absorption film system has extremely-high photo-thermal conversion efficiency and heat collection efficiency, is superior to the current international advanced level and can be widely applied to various solar energy photo-thermal converters. Compared with a heat absorption film of a conventional flat plate heat collector, the absorption film system has the advantages that after the amorphous carbon auxiliary heat absorption thin film is added, the solar energy absorption rate of the film system can be further improved, and meanwhile, the very low emission rate is kept; and the absorption film system can be continuously plated on a large-area substrate through an industrial magnetron sputtering preparation method, so that the effect of efficient production at a low cost is realized.

Description

Solar selective absorbing film system that a kind of carbon film is auxiliary and preparation method thereof
Technical field
The present invention relates to solar thermal collector absorption film, photo-thermal converting material field, specifically refer to solar selective absorbing film system that a kind of carbon film is auxiliary and preparation method thereof.
Technical background
Along with the high speed development of modern social economy, human increasing to the demand of the energy.Yet the traditional energy storage levels such as coal, oil, natural gas constantly reduce, day by day in short supply, cause rising steadily of price, the problem of environmental pollution that conventional fossil fuel of while causes is also further serious, and these are all limiting the development of society and human life quality's raising greatly.Energy problem has become one of distinct issues of contemporary world.Thereby seek the focus that the new energy, particularly free of contamination clean energy resource have become present people research.
Solar energy is a kind of inexhaustible clean energy resource, and stock number is huge, and the annual solar radiant energy total amount that receives of earth surface is 1 * 10 18KWh, more than 10,000 times of consuming gross energy for world's year.Countries in the world are all as new energy development important one of the utilization of solar energy, and the Chinese government also clearly proposes to want the develop actively new forms of energy at Report on the Work of the Government already, and wherein the utilization of solar energy is especially in occupation of prominent position.Yet because solar radiation arrives tellurian energy density little (every square metre about a kilowatt), and be again discontinuous, this brings certain difficulty for large-scale development and use.Therefore, in order extensively to utilize solar energy, not only want the problem on the technical solution, and must be able to compete mutually with conventional energy resource economically.
The utilization of solar energy mainly contains photo-thermal conversion, photoelectric conversion, photochemistry and changes this three kinds of forms.Than photovoltaic industry and the sky high cost of photochemistry conversion and low energy conversion efficiency, it is that a kind of energy conversion efficiency and utilization rate solar energy high and with low cost, that can extensively promote in the whole society utilizes mode that solar heat transforms.In solar energy heat utilization device, key is with the solar radiant energy energy transform into heat energy, to realize that the device of this conversion is called solar thermal collector.
Current solar thermal utilization is the most active, and formed industry surely belong to solar water heater and solar energy thermal-power-generating.Wherein, the solar water heater technology is very ripe, and has formed industry, constantly impacts electric heater market and gas heater market with good performance.At present, the flat and vacuum pipe solar water heater system of world solar markets also deposits, but the shared market share is different.Flat plate collector because have that the photo-thermal switching rate is fast, the thermal efficiency is high, daylighting area is large, simple in structure, reliable, cost suitable, also have the characteristics such as bearing capacity is strong, have and build a series of advantages such as perfect integrated combination, its occupation rate of market reaches more than 90% in developed countries such as Europe, the United States, Australia.And in China, but completely contradict, take vacuum tube collector as main, vacuum tube accounts for 86%.China becomes the production and use big country of solar water heater gradually after nineteen ninety, and annual production in 2010 is about 4,900 ten thousand ㎡, and wherein, the vacuum tube collector area is 4,600 ten thousand ㎡, increases by 15%.And the flat plate collector area only is 3,000,000 ㎡, but growth rate is 50%, and very large development potentiality is arranged.Especially aspect the dwelling house of solar thermal collector and architecture-integral, flat plate collector can be used as large tracts of land set roof thermal modules, becomes a member of building, has both reduced cost, has improved again globality and the aesthetic property of building.
No matter the solar thermal collector of which kind of form and structure all will have an absorption piece that is used for absorbing solar radiation, and the heat-radiating properties of this parts sorbent surface plays an important role to the hot property of heat collector.The physical quantity that characterizes the sorbent surface heat-radiating properties is absorptance and heat emission ratio, and the former characterizes the ability that absorbs solar radiant energy, and the latter characterizes the ability of emission radiant energy under self temperature.
As everyone knows, solar radiation has a very wide wave band and distributes, but its radiant energy mainly concentrates on visible light and near infrared band scope (0.3～2.5 μ m).Therefore, in order to improve the thermal efficiency of solar heat collector, we require the absorption piece surface to have higher absorptance (usually representing with α) in the solar spectrum scope of wavelength 0.3～2.5 μ m.And for the heated body in the practical application, its heat radiation concentration of energy is in wavelength is the infrared range of spectrum of 3.0～30.0 μ m, in order to reduce heat loss, prevent that the shortwave energy that absorbs from falling with the radiation of long wave form again, will in the heat radiation wave band, keep alap heat emission than (usually representing with ε).According to Planck blackbody radiation law and Kirchhoff's law, when being in thermal balance, any object equals the emissivity of synthermal lower this object to the absorptance of black body radiation.Therefore, make object in the heat radiation wave band, keep alap heat emission ratio, namely be equivalent to make object in the heat radiation wave band, to keep alap absorptivity.Sum up, will make exactly sorbent surface when absorbing solar radiation to greatest extent, reduce as far as possible its radiation heat loss, generally, exactly will " that advances be many, and what go out lacks ".Have this selective assimilation effect the surface be called " selective solar spectrum sorbent surface " or " coating for selective absorption of sunlight spectrum ".Obviously, this coating two important performance parameter α, ε play vital effect to the photo-thermal conversion efficiency that improves heat collector.
Present published absorbing film photo-thermal conversion efficiency still has much room for improvement, as: the disclosed TiN of patent publication No. CN1594644A xO yThe absorptivity maximum only has 94% in the film, emissivity minimum up to 7%; The disclosed TiNO of patent publication No. CN 101793437A, TiAlNO, AlN, AlNO and Al 2O 3Multilayer complex films is absorptivity greater than 93%, emissivity reaches 4%; Patent publication No. CN101240944A and the disclosed TiN of CN 201196495Y xO yFilm is adding silica SiO 2Behind the antireflective film, absorptivity reaches 96%, and emissivity is lower than 4%.
With respect to the solar energy decalescence films of having reported, the auxiliary solar selective absorbing film of carbon film disclosed in this invention ties up under the prerequisite that keeps low infrared emissivity, has higher solar absorptance, be better than international most advanced level, and film system and preparation method and suitability for industrialized production are fully compatible, are easy to realize industrialization.
Summary of the invention
The invention discloses auxiliary solar selective absorbing film system of a kind of carbon film and preparation method thereof.Aim to provide high-absorbility, low-launch-rate that a kind of preparation method is fit to suitability for industrialized production, be particularly suitable for the commercial applications of solar thermal utilization aspect the architecture-integral product, promote being widely used of the photo-thermal products such as solar water heater, solar airconditioning.
The solar selective absorbing film architecture that this carbon film is assisted comprises main absorbing film titanium oxynitrides film 2, secondary absorbing film amorphous c film 3, silicon nitride film 4 and silica membrane 5 from bottom to top as shown in Figure 1 successively above metal substrate 1.
Described metal substrate 1 can be the Cu paillon foil, Al paillon foil, deposition one deck Cu film on Al paillon foil, Ni paillon foil or the stainless steel paillon foil, the Ag film of the infrared high reflection of deposition one deck on Al paillon foil, Ni paillon foil, stainless steel paillon foil or the Cu paillon foil.Preferably, adopt the Ag film of the infrared high reflection of deposition one deck on the Cu paillon foil, to reduce the emissivity of absorbing film system, the heat conductivility of this metal substrate is also very excellent simultaneously;
Described titanium oxynitrides TiN xO yIn the film 2, the atomic ratio scope of Ti, N, three kinds of elements of O is Ti:N:O=1:0.5 ~ 1:0.5 ~ 2, and thickness range is 50nm～150nm, too thinly can reduce absorptivity, too thickly can increase emissivity again, can be the individual layer TiN of one-component ratio xO yFilm also can be that each layer component is than different multilayer TiN xO yFilm can also be that component is with the graded films of gradient thickness;
Described amorphous carbon C film 3 thickness ranges are 20nm～100nm;
Described silicon nitride Si 3N 4Film 4 thickness ranges are 20nm～100nm;
Described silica SiO 2Film 5 thickness ranges are 50nm～150nm.
Absorbing film of the present invention is with TiN xO yFilm is as main absorbed layer, with amorphous c film as secondary absorbing membranous layer, with Si 3N 4, SiO 2Two kinds of films are as protective layer and anti-reflection layer.Because TiN xO yThis has a projection that reflectivity is higher in 400～500nm wave band film, so usually be blue, is called as blue film.The adding of secondary absorbing membranous layer amorphous c film then can absorb the solar energy of 400～500nm wave band, thereby further improves the absorptivity of compound film system.
Simultaneously, owing to amorphous carbon, Si 3N 4And SiO 2The refractive index of three kinds of thin-film materials is successively decreased successively, therefore has good gradual change anti-reflection effect, thereby greatly reduces the compound film system surface reflectivity, improves the absorptivity of film system.And Si 3N 4Rete is material very stable under a kind of superhard wear, the high temperature, and the protective layer as film system can keep TiN xO yThe composition ratio that absorbing membranous layer is stable, increasing film is hardness and wearability, can greatly improve weatherability and the stability of absorbing film, thereby improves the service life of heat collector.
The auxiliary solar selective absorbing film system of carbon film disclosed by the invention can be coated with on the large-area metal substrate continuously by industrialization magnetron sputtering preparation method.The specific targets method is as follows:
At first, be coated with TiN in metal substrate xO yFilm is as the main absorbing film of film system.Can adopt the metal Ti alloy target material, carry out the reactive sputtering plated film with nitrogen and two kinds of reacting gas of oxygen simultaneously, recently control TiN by air pressure ratio or the flow of control argon gas, nitrogen, three kinds of gases of oxygen xO yThe ratio of component of three kinds of elements in the film; Also can adopt the TiN ceramic target, carry out the reactive sputtering plated film with oxygen as reacting gas, recently control TiN by air pressure ratio or the flow of control argon gas, two kinds of gases of oxygen xO yThe ratio of component of three kinds of elements in the film; Can also adopt the TiN that sinters by predefined Ti, N, three kinds of element atomic ratios of O xO yCeramic target directly carries out sputter coating.Thickness range is 50nm～150nm, too thinly can reduce absorptivity, too thickly can increase emissivity again.
Secondly, at TiN xO yBe coated with amorphous carbon film on the film as the secondary absorbing film of film system.The preparation of amorphous carbon film is adopted the C target to carry out sputter and is coated with, and thickness range is 20nm～100nm.
Again, adopt the Si target on the amorphous carbon film upper strata, carry out reactive sputtering with nitrogen as reacting gas; Also can adopt Si 3N 4Ceramic target directly carries out sputter coating, and thickness range is 20nm～60nm.
At last, at Si 3N 4Be coated with one deck SiO on the film 2Film.SiO 2Thin film technology can adopt the Si target, carries out reactive sputtering with oxygen as reacting gas; Also can adopt SiO 2Ceramic target directly carries out sputter coating.
Absorbing film of the present invention is that advantage exists:
1, the solar energy thermal conversion efficiency is high.This film ties up to and has added after the auxiliary absorption film of amorphous C, and the solar absorptance of film system is significantly increased, and up to 98.0%, emissivity can be low to moderate 2.3%.Compare with reported flat plate collector absorption film, absorptivity is higher, and still keeps very low emissivity.
2, owing to used Si very stable under superhard wear and the high temperature 3N 4Material than other published absorbing films, has greatly improved weatherability and stability, thereby has improved the service life of heat collector.
3, absorbing film of the present invention is to be coated with continuously on the large tracts of land substrate by industrialization magnetron sputtering preparation method, realizes low-cost high-efficiency production.Have the characteristics of photo-thermal conversion efficiency height and long service life, can be widely used in the heat collector that solar energy optical-thermal is changed.
Description of drawings
Accompanying drawing 1 is the auxiliary solar selective absorbing film architecture schematic diagram of carbon film of the present invention, wherein:
1 is metal substrate;
2 is the titanium oxynitrides film;
3 is amorphous c film;
4 is silicon nitride film;
5 is silica membrane.
Accompanying drawing 2 is 1 reflectance spectrum for the auxiliary solar selective absorbing film of carbon film of the present invention.
Accompanying drawing 3 is 2 reflectance spectrum for the auxiliary solar selective absorbing film of carbon film of the present invention.
Accompanying drawing 4 is 3 reflectance spectrum for the auxiliary solar selective absorbing film of carbon film of the present invention.
The specific embodiment
For making content of the present invention, technical scheme and advantage clearer, further set forth the present invention below in conjunction with specific embodiment, these embodiment only are used for explanation the present invention, and the present invention is not limited only to following examples.Below in conjunction with accompanying drawing the auxiliary solar selective absorbing film architecture of carbon film of the present invention is elaborated:
Embodiment 1:
The auxiliary solar selective absorbing film of a kind of carbon film is 1 and preparation method thereof.
This absorbing film architecture as shown in Figure 1, each thicknesses of layers is composed as follows:
Cu paper tinsel substrate/TiN xO yFilm (50nm)/amorphous c film (100nm)/Si 3N 4Film (20nm)/SiO 2Film (86nm).
This film be reflectance spectrum as shown in Figure 2, the technical indicator of this film system is as follows:
The absorptivity of testing this film system according to GB GB/T6424-2007 and GB/T 4271-2007 reaches 97.8%, emissivity 3.2%.
Take the technological parameter of the used magnetron sputtering apparatus of present embodiment as example, the preparation method of this absorbing film system is as follows:
At first, use magnetron sputtering method, take the Cu paper tinsel as substrate, adopt the TiN that sinters by predefined Ti, N, three kinds of element atomic ratios of O xO yPottery is target, is coated with one deck TiN at the Cu film xO yFilm, thickness are 50nm.Three kinds of element atomic ratios are Ti:N:O=1:0.8:1.2 in the used target of present embodiment, and sputtering power is 1kW, IF-FRE 30kHz, and the Ar throughput is 35sccm;
Again, take C as target, pass into the sputter of Ar gas and prepare amorphous c film, sputtering power is 1kW, rf frequency 40kHz, and Ar throughput 100sccm, the chien shih film thickness grows into 100nm during by the control reactive sputtering;
Then, take Si as target, pass into N gas and prepare Si as reacting gas 3N 4Film, reactive sputtering power 1kW, IF-FRE 30kHz, Ar throughput 80sccm, N throughput 40sccm, the chien shih film thickness grows into 20nm during by the control reactive sputtering;
At last, continue take Si as target, pass into O gas and prepare SiO as reacting gas 2Film, reactive sputtering power 1kW, IF-FRE 40kHz, Ar throughput 200sccm, O throughput 20sccm, the chien shih film thickness grows into 86nm during by the control reactive sputtering.
Embodiment 2:
The auxiliary solar selective absorbing film of a kind of carbon film is 2 and preparation method thereof.
This absorbing film architecture as shown in Figure 1, each thicknesses of layers is composed as follows:
The Cu paper tinsel substrate/TiN of plating Ag film xO yFilm (96nm)/amorphous c film (49nm)/Si 3N 4Film (25nm)/SiO 2Film (89nm).
This film be reflectance spectrum as shown in Figure 3, the technical indicator of this film system is as follows:
The absorptivity of testing this film system according to GB GB/T6424-2007 and GB/T 4271-2007 reaches 98.0%, emissivity 2.3%.
Take the technological parameter of the used magnetron sputtering apparatus of present embodiment as example, the preparation method of this absorbing film system is as follows:
At first, use magnetron sputtering method, be coated with the infrared high reflection Ag film of one deck, thickness 100nm at the Cu paper tinsel;
Secondly, take metal Ti as target, Ar gas is sputter gas, passes into N gas, O gas prepare content gradually variational as reacting gas TiN in the Cu paper tinsel substrate of plating Ag film xO yFilm.By control Ar gas, N gas, the flow-rate ratio of three kinds of gases of O gas or air pressure prepares content gradually variational than temporal evolution TiN xO yThe film film, the chien shih film thickness grows into 96nm during by the control reactive sputtering.Sputtering power is 1kW, IF-FRE 30kHz, and in the sputter procedure, the Ar throughput is fixed as 35sccm, and the N throughput is successively decreased with sputtering time gradually from 10sccm～5sccm, and the O throughput increases progressively with sputtering time gradually from 2sccm～5sccm.The gradual change TiN that under this technological parameter, obtains xO yFilm composition is Ti:N:O=1:0.5 ~ 1:1 ~ 2 than with the varied in thickness scope;
Again, take C as target, pass into the sputter of Ar gas and prepare amorphous c film, reactive sputtering power 1kW, IF-FRE 40kHz, the Ar throughput is 100sccm, the chien shih film thickness grows into 49nm during by the control reactive sputtering;
Then, with Si 3N 4Ceramic target carries out magnetron sputtering, sputtering power 2kW, and IF-FRE 100kHz, the Ar throughput is 100sccm.The chien shih film thickness grows into 25nm during by the control reactive sputtering;
At last, with SiO 2Ceramic target carries out magnetron sputtering, sputtering power 2kW, and IF-FRE 100kHz, the Ar throughput is 200sccm.The chien shih film thickness grows into 89nm during by the control reactive sputtering.
This absorbing film system is owing to used the Cu paper tinsel substrate of plating Ag film, and emissivity is low to moderate 2.3%.And because Si 3N 4And SiO 2The sputter procedure of film is all used ceramic target, and technology controlling and process is simple.
Embodiment 3:
The auxiliary solar selective absorbing film of a kind of carbon film is 3 and preparation method thereof.
This absorbing film architecture as shown in Figure 1, each thicknesses of layers is composed as follows:
Al paper tinsel substrate/TiN xO yFilm (150nm)/amorphous c film (20nm)/Si 3N 4Film (60nm)/SiO 2Film (50nm).
This film be reflectance spectrum as shown in Figure 3, the technical indicator of this film system is as follows:
The absorptivity of testing this film system according to GB GB/T6424-2007 and GB/T 4271-2007 reaches 97.2%, emissivity 3.6%.
Take the technological parameter of the used magnetron sputtering apparatus of present embodiment as example, the preparation method of this absorbing film system is as follows:
At first, use magnetron sputtering method, take the Al paper tinsel as substrate, take ceramic TiN as target, Ar gas is sputter gas, passes into O gas and prepares the different multilayer TiN of each layer component as reacting gas xO yFilm.Regulate TiN by the ratio of regulating between Ar gas, two kinds of gases of O gas xO yThe composition of three kinds of elements ratio in the film.Present embodiment adopts three layers of TiNxOy film, and sputtering power is 1kW, IF-FRE 30kHz.Ground floor TiN xO yFilm adopts Ar throughput 30sccm, O throughput 3sccm, and thickness 70nm, film composition is than being Ti:N:O=1:0.8:1.2; Second layer TiN xO yFilm adopts Ar throughput 35sccm, O throughput 4sccm, and thickness 50nm, film composition is than being Ti:N:O=1:0.7:1.4; The 3rd layer of TiN xO yFilm adopts Ar throughput 40sccm, O throughput 6sccm, and thickness 30nm, film composition is than being Ti:N:O=1:0.5:1.6.
Again, take C as target, pass into the sputter of Ar gas and prepare amorphous c film, sputtering power is 1kW, rf frequency 40kHz, and Ar throughput 100sccm, the chien shih film thickness grows into 20nm during by the control reactive sputtering;
Then, take Si as target, pass into N gas and prepare Si as reacting gas 3N 4Film, reactive sputtering power 1kW, IF-FRE 30kHz, Ar throughput 80sccm, N throughput 40sccm, the chien shih film thickness grows into 60nm during by the control reactive sputtering;
At last, continue take Si as target, pass into O gas and prepare SiO as reacting gas 2Film, reactive sputtering power 1kW, IF-FRE 40kHz, Ar throughput 200sccm, O throughput 20sccm, the chien shih film thickness grows into 50nm during by the control reactive sputtering.
This film system is because use Al paper tinsel is made substrate, and is with low cost.

Claims (2)

1. the auxiliary solar selective absorbing film of carbon film is, it is characterized in that: described solar selective absorbing film architecture is: be followed successively by main absorbing film titanium oxynitrides (2) at metal substrate (1), secondary absorbing film amorphous carbon (3), silicon nitride film (4) and silica membrane (5), wherein:
Described metal substrate (1) is the Cu paillon foil, the Al paillon foil, and Al paillon foil, Ni paillon foil or at stainless steel paillon foil deposition one deck Cu film, or at the Ag film of Al paillon foil, Ni paillon foil, stainless steel paillon foil or the infrared high reflection of Cu paillon foil deposition one deck; Preferably, adopt the Ag film of the infrared high reflection of deposition one deck on the Cu paillon foil;
Described main absorbing film is titanium oxynitrides (2) TiN xO yFilm, the atomic ratio scope of Ti, N, three kinds of elements of O is Ti:N:O=1:0.5 ~ 1:0.5 ~ 2, thickness is 50nm～150nm;
Described secondary absorbing film amorphous carbon (3) thickness is 20nm～100nm;
Described silicon nitride film (4) thickness is 20nm～60nm;
Described silica membrane (5) thickness is 50nm～150nm.
2. preparation method of the auxiliary solar selective absorbing film system of carbon film as claimed in claim 1 is characterized in that:
The preparation method of described main absorbing film titanium oxynitrides (2) is magnetron sputtering plating, adopts the metal Ti target, carries out reactive sputtering with nitrogen and two kinds of reacting gas of oxygen simultaneously; Or adopt the TiN ceramic target, carry out reactive sputtering with oxygen as reacting gas; Or adopt the TiN that sinters by predefined Ti, N, three kinds of element atomic ratios of O xO yCeramic target directly carries out sputter coating;
The preparation of described secondary absorbing film amorphous carbon (3) adopts the C target to carry out sputter coating;
The Si target is adopted in the preparation of described silicon nitride film (4), carries out reactive sputtering with nitrogen as reacting gas, or directly adopts Si 3N 4Ceramic target carries out sputter coating;
The Si target is adopted in the preparation of described silica membrane (5), carries out reactive sputtering with oxygen as reacting gas, or directly adopts SiO 2Ceramic target carries out sputter coating.
CN201210507208.3A 2012-11-30 2012-11-30 Carbon film auxiliary solar energy selective absorption film system and preparation method thereof Active CN103017384B (en)

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CN103383155A (en) * 2013-06-21 2013-11-06 中国科学院上海技术物理研究所 Ti-alloy nitride selective-absorption film system and preparation method thereof
CN103411335A (en) * 2013-07-30 2013-11-27 中国科学院上海技术物理研究所 Selective absorbing film set of radiation absorbing layer based on mixture
CN104034071A (en) * 2013-03-08 2014-09-10 中国建筑材料科学研究总院 Dark green solar spectral selection absorbing coating and preparation method and application thereof
CN107504701A (en) * 2016-06-14 2017-12-22 淄博环能海臣环保技术服务有限公司 A kind of complex fire resistant selective absorbing functional membrane and its manufacture method

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