CN202954086U - Film plating device and target materials - Google Patents
Film plating device and target materials Download PDFInfo
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- CN202954086U CN202954086U CN 201220657375 CN201220657375U CN202954086U CN 202954086 U CN202954086 U CN 202954086U CN 201220657375 CN201220657375 CN 201220657375 CN 201220657375 U CN201220657375 U CN 201220657375U CN 202954086 U CN202954086 U CN 202954086U
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Abstract
The utility model provides a film plating device and target materials, wherein the film plating device comprises a cavity and the target materials, wherein the target materials are of at least two target materials which are arranged in the cavity in parallel; and the cavity comprises a reaction gas input port positioned between any two lines of the target materials. According to the scheme disclosed by the utility model, the distribution of reaction gas is uniform, and the thickness of a film layer on a baseplate is further uniform.
Description
Technical field
The utility model relates to optics fabrication tool technical field, refers to especially a kind of filming equipment and target.
Background technology
In recent years, at microelectronics, in optical thin film and material surface process field, magnetron sputtering technique is as a kind of effective membrane deposition method, be widely used in thin film deposition and surface coating preparation, in industrial production and field of scientific study, brought into play great function.
The homogeneity of the film thickness that magnetron sputtering generates is an important indicator of film forming, in sputter coating, because the cavity entrance only has one, in the making of oxide semiconductor, when the oxygen entered from this cavity entrance carries out plated film by target, cause institute's coatings thickness can not become desirable being uniformly distributed.
As shown in Figure 1,2 and 3, wherein Fig. 1 is the perspective view of existing this film coating apparatus to film coating apparatus of the prior art, and Fig. 2 is front view, and Fig. 3 is vertical view; In figure, sputtering source is comprised of cavity 21 and target 22, and target 22 is a rectangular parallelepiped target; Target 22 is positioned at cavity 21 inside, and the bottom opening of cavity 21 faces substrate to be coated 11, and cavity 21 also has an oxygen (O
2) input aperture 23, on the substrate 11 of the deposition of material sputtered before being positioned at target.
When the film coating apparatus by said structure carries out plated film to substrate, because the oxygen input aperture 23 of cavity 21 only has one, therefore, cause the reactant gases skewness, thereby make the thicknesses of layers on substrate inhomogeneous.
The utility model content
The technical problems to be solved in the utility model is to provide a kind of filming equipment and target, can make reactant gases be evenly distributed, thereby makes the thicknesses of layers on substrate even.
For solving the problems of the technologies described above, embodiment of the present utility model provides a kind of filming equipment, comprising: cavity and target; Described target is at least two targets that be arranged in parallel that are positioned at described inside cavity; Described cavity has the reactant gases input aperture between any two row targets.
Wherein, described target is cuboid, cylindrical or the square bodily form.
Wherein, when described target is the square bodily form, the position between any two targets of described cavity also is provided with the reactant gases input aperture.
Wherein, the bottom of described cavity has over against the opening of substrate to be coated.
Wherein, described reactant gases is oxygen.
Wherein, filming equipment also comprises: the control device of controlling described target speed of rotation.
The utility model also provides a kind of target, comprising: at least two targets that be arranged in parallel.
Wherein, described target is cuboid, cylindrical or the square bodily form.
The beneficial effect of technique scheme of the present utility model is as follows:
In such scheme, by target being arranged to be positioned at least two targets that be arranged in parallel of described inside cavity; Described cavity has the reactant gases input aperture between any two row targets, thereby the reactant gases entered in cavity by described reactant gases input aperture is uniformly distributed, and and then makes the thicknesses of layers on substrate even.
The accompanying drawing explanation
The perspective view that Fig. 1 is film coating apparatus in prior art;
Fig. 2 is the front view of the film coating apparatus shown in Fig. 1;
Fig. 3 is the vertical view of the film coating apparatus shown in Fig. 1;
The perspective view that the target that Fig. 4 is film coating apparatus of the present utility model is cuboid;
The front view that Fig. 5 is the film coating apparatus shown in Fig. 4;
The vertical view that Fig. 6 is the film coating apparatus shown in Fig. 4;
Fig. 7 is the front view that target is the square bodily form.
Embodiment
For making the technical problems to be solved in the utility model, technical scheme and advantage clearer, be described in detail below in conjunction with the accompanying drawings and the specific embodiments.
As Figure 4-Figure 6, embodiment of the present utility model provides a kind of filming equipment, comprising: cavity 41 and target 42; Described target 42 is for being positioned at least two targets that be arranged in parallel of described cavity 41 inside; Described cavity 41 has the reactant gases input aperture 43 between any two row targets; Wherein, described target 42 can be cuboid; The bottom of described cavity 41 is over against substrate to be coated 31.Described reactant gases can be oxygen (O
2) isoreactivity gas.Above-mentioned filming equipment also comprises: the control device of controlling described target speed of rotation.
In above-described embodiment, target by least two cuboids that target 42 is set to be arranged in parallel, and can reactant gases input aperture 43 be set by the vertical entrance between the target of two cuboids or horizontal ingress, and control target 42 by control device and be rotated with longitudinal axes or lateral shaft, thereby can make reactant gases by reactant gases input aperture 43 being evenly distributed in unit volume, thereby make the distribution of material that is deposited on substrate 31 even, and then make the thicknesses of layers of substrate 31 even.
In another embodiment of the present utility model, target 42 can also be cylindrical; In this embodiment, same by least two tubular targets that target 42 is set to be arranged in parallel, and can reactant gases input aperture 43 be set by the vertical entrance between two tubular targets or horizontal ingress, and control target 42 by control device and be rotated with longitudinal axes or lateral shaft, thereby can make reactant gases by reactant gases input aperture 43 being evenly distributed in unit volume, thereby make the distribution of material that is deposited on substrate 31 even, and then make the thicknesses of layers of substrate 31 even.
As shown in Figure 7, in another embodiment of the present utility model, target 42 can also be the square bodily form, in this embodiment, equally by the target of at least two square bodily forms that target 42 is set to be arranged in parallel, and the vertical entrance between the target of target that can be by the square bodily forms of two row or any two square bodily forms or laterally ingress reactant gases input aperture 43 is set, thereby can make the four directions of the target of square shape all can spray reactant gases, and control target 42 by control device and be rotated with longitudinal axes or lateral shaft, thereby can make reactant gases by reactant gases input aperture 43 being evenly distributed in unit volume, thereby make the distribution of material that is deposited on substrate 31 even, and then make the thicknesses of layers of substrate 31 even.
In above-mentioned each embodiment, the rotation of the target of the cuboid be arranged in parallel, cylindrical or the square bodily form, can control separately.
Embodiment of the present utility model also provides a kind of target, comprising: at least two targets that be arranged in parallel.Wherein, described target is cuboid, cylindrical or the square bodily form.
The above is preferred implementation of the present utility model; should be understood that; for those skilled in the art; under the prerequisite that does not break away from principle described in the utility model; can also make some improvements and modifications, these improvements and modifications also should be considered as protection domain of the present utility model.
Claims (8)
1. a filming equipment, comprising: cavity and target; It is characterized in that,
Described target is at least two targets that be arranged in parallel that are positioned at described inside cavity;
Described cavity has the reactant gases input aperture between any two row targets.
2. filming equipment according to claim 1, is characterized in that, described target is cuboid, cylindrical or the square bodily form.
3. filming equipment according to claim 2, is characterized in that, when described target is the square bodily form, the position between any two targets of described cavity also is provided with the reactant gases input aperture.
4. filming equipment according to claim 1, is characterized in that, the bottom of described cavity has over against the opening of substrate to be coated.
5. filming equipment according to claim 1, is characterized in that, described reactant gases is oxygen.
6. filming equipment according to claim 1, is characterized in that, also comprises: the control device of controlling described target speed of rotation.
7. a target, is characterized in that, comprising: at least two targets that be arranged in parallel.
8. target according to claim 7, is characterized in that, described target is cuboid, cylindrical or the square bodily form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220657375 CN202954086U (en) | 2012-12-03 | 2012-12-03 | Film plating device and target materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220657375 CN202954086U (en) | 2012-12-03 | 2012-12-03 | Film plating device and target materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202954086U true CN202954086U (en) | 2013-05-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220657375 Expired - Lifetime CN202954086U (en) | 2012-12-03 | 2012-12-03 | Film plating device and target materials |
Country Status (1)
| Country | Link |
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| CN (1) | CN202954086U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103852946A (en) * | 2014-02-24 | 2014-06-11 | 合肥鑫晟光电科技有限公司 | Array substrate and production method thereof as well as display device |
| CN103852946B (en) * | 2014-02-24 | 2016-11-30 | 合肥鑫晟光电科技有限公司 | A kind of array base palte and preparation method thereof, display device |
| CN107574417A (en) * | 2017-09-21 | 2018-01-12 | 京东方科技集团股份有限公司 | Sputtering system |
| CN113862624A (en) * | 2021-09-27 | 2021-12-31 | 上海集成电路材料研究院有限公司 | Sputtering deposition equipment and sputtering deposition method |
| CN113862625A (en) * | 2021-09-27 | 2021-12-31 | 上海集成电路材料研究院有限公司 | High-flux film deposition equipment and film deposition method |
-
2012
- 2012-12-03 CN CN 201220657375 patent/CN202954086U/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103852946A (en) * | 2014-02-24 | 2014-06-11 | 合肥鑫晟光电科技有限公司 | Array substrate and production method thereof as well as display device |
| CN103852946B (en) * | 2014-02-24 | 2016-11-30 | 合肥鑫晟光电科技有限公司 | A kind of array base palte and preparation method thereof, display device |
| US9793304B2 (en) | 2014-02-24 | 2017-10-17 | Boe Technology Group Co., Ltd. | Array substrate, method for producing the same and display apparatus |
| CN107574417A (en) * | 2017-09-21 | 2018-01-12 | 京东方科技集团股份有限公司 | Sputtering system |
| CN107574417B (en) * | 2017-09-21 | 2019-06-28 | 京东方科技集团股份有限公司 | Sputtering system |
| CN113862624A (en) * | 2021-09-27 | 2021-12-31 | 上海集成电路材料研究院有限公司 | Sputtering deposition equipment and sputtering deposition method |
| CN113862625A (en) * | 2021-09-27 | 2021-12-31 | 上海集成电路材料研究院有限公司 | High-flux film deposition equipment and film deposition method |
| WO2023045051A1 (en) * | 2021-09-27 | 2023-03-30 | 上海集成电路材料研究院有限公司 | Sputtering deposition device and sputtering deposition method |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130529 |
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| CX01 | Expiry of patent term |