CN202948978U - 一种立方氮化硼薄膜促进芯片散热的白光led器件 - Google Patents

一种立方氮化硼薄膜促进芯片散热的白光led器件 Download PDF

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CN202948978U
CN202948978U CN2012205854847U CN201220585484U CN202948978U CN 202948978 U CN202948978 U CN 202948978U CN 2012205854847 U CN2012205854847 U CN 2012205854847U CN 201220585484 U CN201220585484 U CN 201220585484U CN 202948978 U CN202948978 U CN 202948978U
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nitride film
boron nitride
cubic boron
led
chip
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杨杭生
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Hangzhou Tianzhu Science & Technology Co Ltd
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Hangzhou Tianzhu Science & Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

本实用新型公开的立方氮化硼薄膜促进芯片散热的白光LED器件，包括衬底，在衬底上生长有立方氮化硼薄膜，立方氮化硼薄膜与外部散热器相连，在立方氮化硼薄膜上固定有n个并联或串联的LED芯片，n≥1，LED芯片的两个电极与引出线相连，LED芯片与引出线由荧光粉胶封装。本实用新型的LED器件结构工艺简单，在LED芯片和衬底之间加入了一层立方氮化硼薄膜，利用立方氮化硼的高热导率，从横向和纵向两个通道同时向外传输芯片产生的热量，从而提高LED的散热效果，延长使用寿命。

Description

一种立方氮化硼薄膜促进芯片散热的白光LED器件
技术领域
本实用新型涉及一种白光LED器件，尤其是提高LED芯片散热的白光LED器件。
背景技术
发光二级管（LED）具有节能、环保、使用寿命长、无辐射、发光效率高等显著优点，被认为是继白炽灯、荧光灯、高强度气体放电灯之后的第四代光源。我国是全球第二大耗能国，照明用电量约占全部电能消耗的12%—15%。LED的耗电仅为白炽灯的1/8、荧光灯的1/2，发展LED照明对节能减排意义重大。 
然而，目前LED的发光效率仅能达到10%~20%，其余的能量仍然转化为热能。如果芯片产生的热量不能及时、高效地从PN结散发出来，将导致PN结的结温快速升高，严重影响LED的发光性能和使用寿命。同时，温度升高会导致树脂的透明度下降，严重影响透光性能，减弱LED的光输出。功率型白光LED通过提高芯片的输入功率，或者将多个芯片按照阵列模块方式封装在一起，来提高亮度。但是，两种方法均使LED的热流密度急剧增加。因此，散热已成为制约LED应用的瓶颈。
典型的LED的散热主要依靠主要传导和对流方式，其散热通道为：芯片结—外延层—封装基板—散热装置—周围环境，散热通道以纵向为主。以氮化镓LED芯片为例。因为LED封装时所采用的部分材料的导热性能差。LED工作时芯片产生的热量，来不及及时传输出来，引起局部高温。从芯片到周围环境的传热通道成为散热的瓶颈。
发明内容
鉴于现有技术存在的芯片散热不佳的缺点，本实用新型的目的是提供一种立方氮化硼薄膜促进芯片散热的白光LED器件。
本实用新型的立方氮化硼薄膜促进芯片散热的白光LED器件，包括衬底，在衬底上生长有立方氮化硼薄膜，立方氮化硼薄膜与外部散热器相连，在立方氮化硼薄膜上固定有n个并联或串联的LED芯片，n≥1，LED芯片的两个电极与引出线相连，LED芯片与引出线由荧光粉胶封装。
上述的衬底可以是硅片、蓝宝石片、金刚石薄膜、陶瓷片、或金属薄片。所说的LED芯片可以是蓝宝石基氮化镓二极管发光芯片、碳化硅基氮化镓二极管发光芯片、或硅基氮化镓二极管发光芯片。所说的荧光粉胶是添加有荧光粉的环氧树脂、硅胶或聚碳酸酯。
上述的在衬底上生长立方氮化硼薄膜可以采用CN1850589或CN101565822的方法制备获得。
本实用新型的LED器件结构工艺简单，在LED芯片和衬底之间加入了一层立方氮化硼薄膜，利用立方氮化硼的优异热导率（1300W/m*K），使LED芯片产生的大部分热量，通过立方氮化硼薄膜层迅速横向传输到外部散热器上；这样，芯片产生的热量，可以同时从横向和纵向向外传输，达到散热的效果，提高LED器件的散热性能，延长LED的使用寿命。
附图说明
图1是立方氮化硼薄膜促进芯片散热的白光LED器件示意图。
图中，1为外部散热器；2为外部电极；3为LED芯片；4为引出线；5为电极；6荧光粉胶；7为立方氮化硼薄膜；8为衬底；9为导热胶。
具体实施方式
以下结合附图对本实用新型作进一步描述。
参照图1，本实用新型的白光LED器件包括衬底8，在衬底8上有采用CN1850589或CN101565822方法生长的立方氮化硼薄膜7，立方氮化硼薄膜7与外部散热器1相连，n个并联或串联的LED芯片3用导热胶9固定在立方氮化硼薄膜7上，n≥1，LED芯片3的两个电极5与引出线4相连，通过引出线使LED芯片的两个电极连接到外部电极2上，LED芯片与引出线用荧光粉胶6封装。
芯片工作时产生的热量，可以同时从横向和纵向两个通道向外部传输到散热器上，从而提高芯片的散热效果，延长LED的使用寿命。
上述具体实施方式仅是本实用新型的具体实施例子，本实用新型不限于以上实施例子，在本实用新型的精神和权利要求的保护范围内，对本实用新型作出的任何修改和改变，均应认为是落入本实用新型的保护范围。

Claims (4)

1.一种立方氮化硼薄膜促进芯片散热的白光LED器件，其特征在于包括衬底（8），在衬底（8）上生长有立方氮化硼薄膜（7），立方氮化硼薄膜（7）与外部散热器（1）相连，在立方氮化硼薄膜（7）上固定有n个并联或串联的LED芯片（3），n≥1，LED芯片（3）的两个电极（5）与引出线（4）相连，LED芯片（3）与引出线（4）由荧光粉胶（6）封装。
2.根据权利要求书1所述的立方氮化硼薄膜促进芯片散热的白光LED器件，其特征在于所说的衬底（8）是硅片、蓝宝石片、金刚石薄膜、陶瓷片、或金属薄片。
3.根据权利要求书1所述的立方氮化硼薄膜促进芯片散热的白光LED器件，其特征在于所说的LED芯片（3）是蓝宝石基氮化镓二极管发光芯片、碳化硅基氮化镓二极管发光芯片、或硅基氮化镓二极管发光芯片。
4.根据权利要求书1所述的立方氮化硼薄膜促进芯片散热的白光LED器件，其特征在于所说的荧光粉胶（6）是添加有荧光粉的环氧树脂、硅胶或聚碳酸酯。
CN2012205854847U 2012-11-08 2012-11-08 一种立方氮化硼薄膜促进芯片散热的白光led器件 Expired - Lifetime CN202948978U (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102931333A (zh) * 2012-11-08 2013-02-13 杭州天柱科技有限公司 立方氮化硼薄膜促进芯片散热的白光led器件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102931333A (zh) * 2012-11-08 2013-02-13 杭州天柱科技有限公司 立方氮化硼薄膜促进芯片散热的白光led器件

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