CN202928966U - Detection device for detecting residual organics in array substrate manufacturing procedure - Google Patents
Detection device for detecting residual organics in array substrate manufacturing procedure Download PDFInfo
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- CN202928966U CN202928966U CN 201220613840 CN201220613840U CN202928966U CN 202928966 U CN202928966 U CN 202928966U CN 201220613840 CN201220613840 CN 201220613840 CN 201220613840 U CN201220613840 U CN 201220613840U CN 202928966 U CN202928966 U CN 202928966U
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Abstract
The utility model discloses a detection device for detecting residual organics in an array substrate manufacturing procedure. The detection device comprises a frame; and the detection device further comprises a carrying platform, a halogen light source, an infrared light source, an imaging and infrared detection unit with a detection light receiving end, and a dimming component, which are all arranged in the frame. When the dimming component guides the detection light of the halogen light source into the detection light receiving end, the imaging and infrared detection unit generates a detection image according to the detection light, wherein the detection image is arranged according to a plane-coordinate system of which the origin of coordinates is a special para-position point in the substrate, when defects formed by residual organics exist on the substrate surface, the imaging and infrared detection unit determines the position of the defects, then, the dimming component guides the detection light of the infrared light source to the position of the defects and guides the detection light reflected by the defect points into the detection light receiving end, and the imaging and infrared detection unit analyzes the constituents of the organics according to the detection light of the infrared light source. The detection device provided by the utility model can be used for reducing the difficulty in detection on the residual organics of the substrate.
Description
Technical field
The utility model relates to array base palte production testing technical field, particularly the pick-up unit of residual organic matter in a kind of detection arrays basal plate making process.
Background technology
In the array base palte processing procedure of thin-film transistor LCD device TFT-LCD, because technological reason causes photoresist or other organic substance residues on substrate, for reducing defect point that the residual organism such as photoresist of substrate form, the subsequent processing of substrate is impacted, the defect point that need to carry out to substrate the organism formation such as residual photoresist detects, if have defect point on substrate, need these defect points are carried out constituent analysis, in order to remove.
in prior art, when substrate being carried out the defect point detection, the appearance inspection machine that at first adopts detects substrate, to confirm whether there is defect point on substrate, then by infrared equipments such as infrared microscopy mirror devices, these defect points are being carried out constituent analysis, when using appearance inspection machine that substrate surface is checked, can only find substrate surface and whether have the defect point that the residual organism such as photoresist form, and the position of these defect points, can not analyze the organic composition that forms defect point, and the infrared equipments such as infrared microscopy mirror device of composition that can analyzing defect can be analyzed the organic composition that forms defect point, but can't position defect point, because the size of defect point is less, during concrete analysis, the defect point that residual organic matter forms is difficult for finding at microscopically, increased the difficulty that residual organic matter detects.
The utility model content
The utility model provides the pick-up unit of organic substance residues in a kind of detection arrays basal plate making process, and this pick-up unit can reduce the difficulty that the residual organic matter to substrate detects.
For achieving the above object, the utility model provides following technical scheme:
The pick-up unit of residual organic matter in a kind of detection arrays basal plate making process comprises:
Support body;
Be installed on the bearing substrate in support body microscope carrier, halogen light source, infrared light supply, have the imaging that detects optical receiving end and infrared detection unit and
With the detection photoconduction of halogen light source or the infrared light supply substrate surface to the microscope carrier carrying, and with the detection photoconduction of the substrate surface reflection dimming components to described detection optical receiving end;
when described dimming components imports the detection optical receiving end at the detection light with halogen light source, described imaging and infrared detection unit are according to the detected image that detects the photogenerated substrate, described detected image is according to the plane coordinate system layout of a particular pair of bit point in substrate as true origin, when having the defect point of organic substance residues formation in described imaging and infrared detection unit judgement substrate surface, determine the position of defect point according to described plane coordinate system, then by dimming components with the detection photoconduction of the described infrared light supply position to defect point, and the detection light of defect point reflection is imported described detection optical receiving end, described imaging and infrared detection unit are according to the organic composition of detection light analyzing defect point of the infrared light supply that imports described detection optical receiving end.
Preferably, described halogen light source is relative with the transmit direction of infrared light supply, and overlaps, and described dimming components is between halogen light source and infrared light supply.
Preferably, the transmitting terminal of described halogen light source and described infrared light supply is positioned at same level, and described dimming components comprises:
A pentaprism that is installed on support body, have adjacent and orthogonal the first faceted pebble and the second faceted pebble, described the first faceted pebble is towards the transmitting terminal of described halogen light source and when vertical with the detection light of described halogen light source emission, and the second faceted pebble is surperficial parallel with substrate; Described the second faceted pebble is towards the transmitting terminal of described infrared light supply and when vertical with the detection light of infrared light supply emission, and the first faceted pebble is surperficial parallel with substrate;
Be positioned at pentaprism below, the detection photoconduction that pentaprism is penetrated is to first catoptron on the surface of substrate;
Be installed on described support body, with the detection photoconduction of substrate reflection to the second catoptron that detects optical receiving end.
Preferably, described microscope carrier is bidirectional parallel operating mechanism, can be with substrate horizontal and vertical displacement in surface level.
Preferably, described detection optical receiving end is one, and described the second catoptron is one.
Preferably, described detection optical receiving end comprises:
The halogen of the detection light of the halogen light source of reception substrate reflection detects optical receiving end;
The infrared detection optical receiving end of the detection light of the infrared light supply of reception substrate reflection.
Preferably, described halogen detection optical receiving end and described infrared detection optical receiving end are positioned at the both sides of described pentaprism; Described the first catoptron is rotatably mounted in described support body, and described the second catoptron comprises:
With the detection photoconduction of the infrared light supply of the substrate surface reflection ir reflector to the infrared detection optical receiving end;
The detection photoconduction of the halogen light source of substrate surface reflection is detected the halogen catoptron of optical receiving end to halogen.
Preferably, the detection light of the detection light of described halogen light source and described infrared light supply shares a cover plane coordinate system.
Preferably, described imaging and infrared detection unit comprise imager and examination of infrared spectrum instrument.
The pick-up unit of residual organic matter in the detection arrays basal plate making process that the utility model provides comprises:
Support body;
Be installed on the bearing substrate in support body microscope carrier, halogen light source, infrared light supply, have the imaging that detects optical receiving end and infrared detection unit and
With the detection photoconduction of halogen light source or the infrared light supply substrate surface to the microscope carrier carrying, and with the detection photoconduction of the substrate surface reflection dimming components to described detection optical receiving end;
when described dimming components imports the detection optical receiving end at the detection light with halogen light source, described imaging and infrared detection unit are according to the detected image that detects the photogenerated substrate, described detected image is according to the plane coordinate system layout of a particular pair of bit point in substrate as true origin, when having the defect point of organic substance residues formation in described imaging and infrared detection unit judgement substrate surface, determine the position of defect point according to described plane coordinate system, then by dimming components with the detection photoconduction of the described infrared light supply position to defect point, and the detection light of defect point reflection is imported described detection optical receiving end, described imaging and infrared detection unit are according to the organic composition of detection light analyzing defect point of the infrared light supply that imports described detection optical receiving end.
above-mentioned detection device is when concrete the detection, substrate is placed on microscope carrier, at first use dimming components with the detection photoconduction of the halogen light source surface to substrate, the detection light modulated light assembly of the halogen light source of substrate surface reflection imports and detects optical receiving end, imaging and infrared detection unit form the detected image of substrate surface as the plane coordinate system of initial point according to the particular pair of bit point in substrate, with the position of definite defect point on substrate surface, after having determined the position of defect point, by dimming components with the detection photoconduction of the infrared light supply surface to substrate, adjusting operation according to dimming components, the detection light that can know infrared light supply is penetrated at the detection light of the point of substrate surface and halogen light source and is penetrated relative spacing between point at substrate surface, and then can penetrate by the detection light of adjusting infrared light supply the position of the point on substrate surface, with the detection photoconduction of the infrared light supply position to defect point, and the detection light of defect point reflection is imported the detection optical receiving end, imaging and infrared detection unit are according to the organic composition of detection light analyzing defect point that imports the infrared light supply that detects optical receiving end.
So the pick-up unit that the utility model provides can reduce the difficulty that the residual organic matter to substrate detects.
Description of drawings
Fig. 1 is using halogen light source to detect the detected state schematic diagram of the coordinate position in the plane coordinate system of defect point at microscope carrier for the first structure of the pick-up unit that the utility model provides;
Fig. 2 is using infrared light supply to detect the detected state schematic diagram of the organic components of analyzing defect point for the first structure of the pick-up unit that the utility model provides;
The second structural representation of the pick-up unit that Fig. 3 provides for the utility model;
A kind of structural representation of dimming components in pick-up unit the first structure that Fig. 4 provides for the utility model.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making the every other embodiment that obtains under the creative work prerequisite, all belong to the scope of the utility model protection.
The utility model provides the pick-up unit of residual organic matter in a kind of detection arrays basal plate making process, is described for ease of the principle of work to above-mentioned detection device, and take pick-up unit illustrated in figures 1 and 2 as example, above-mentioned detection device comprises:
Support body 1;
Be installed on the bearing substrate 7 in support body 1 microscope carrier 8, halogen light source 9, infrared light supply 3, have the imaging that detects optical receiving end 10 and infrared detection unit 2 and
With the detection photoconduction of halogen light source 9 or infrared light supply 3 substrate 7 surfaces to microscope carrier 8 carryings, and with the detection photoconduction of substrate 7 surface reflections to the dimming components that detects optical receiving end 10;
when dimming components imports detection optical receiving end 10 at the detection light with halogen light source 9, imaging and infrared detection unit 2 are according to the detected image that detects photogenerated substrate 7 surfaces, detected image is according to the plane coordinate system layout of a particular pair of bit point in substrate 7 as true origin, when the defect point that exists organic substance residues to form in imaging and infrared detection unit 2 judgement substrate 7 surfaces, determine the position of defect point according to above-mentioned plane coordinate system, then by dimming components with the detection photoconduction of infrared light supply 3 position to defect point, and the detection light of defect point reflection is imported detection optical receiving end 10, imaging and infrared detection unit 2 are according to the organic composition of detection light analyzing defect point that imports the infrared light supply that detects optical receiving end 10.
above-mentioned detection device is when concrete the detection, substrate 7 is placed on microscope carrier 8, as shown in Figure 1, at first use dimming components with the detection photoconduction of halogen light source 9 surface to substrate 7, the detection light modulated light assembly of the halogen light source 9 of substrate 7 surface reflections imports and detects optical receiving end 10, imaging and infrared detection unit 2 form the detected image on substrate 7 surfaces as the plane coordinate system of initial point according to the particular pair of bit point in substrate 7, to determine that defect point is in the lip-deep position of substrate 7, after having determined the position of defect point, by dimming components with the detection photoconduction of infrared light supply 3 surface to substrate 7, adjusting operation according to dimming components, the detection light that can know infrared light supply 3 is penetrated at the detection light of the point on substrate 7 surfaces and halogen light source 9 and is penetrated relative spacing between the point on substrate 7 surfaces, and then can penetrate position at the lip-deep point of substrate 7 by the detection light of adjusting infrared light supply 3, with the detection photoconduction of infrared light supply 3 position to defect point, and the detection light of defect point reflection is imported detection optical receiving end 10, imaging and infrared detection unit 2 are according to the organic composition of detection light analyzing defect point that imports the infrared light supply that detects optical receiving end 10.
So the pick-up unit that the utility model provides can reduce the difficulty that the residual organic matter to substrate detects.
Relative position between the halogen light source 9 of mentioning in technique scheme, infrared light supply 3 and dimming components has various ways, preferably, adjustment for ease of the detection light of the emission of many halogen light sources 9 and infrared light supply 3, as depicted in figs. 1 and 2, above-mentioned halogen light source 9 is relative with the transmit direction of infrared light supply 3, and overlap, dimming components is between halogen light source 9 and infrared light supply 3.Orientation as depicted in figs. 1 and 2, halogen light source 9 is relative with the transmit direction of infrared light supply 3, halogen light source 9 is positioned at the left side of dimming components, infrared light supply 3 is positioned at the right side of dimming components, so halogen light source 9 and infrared light supply 3 emissions detect direction of light and can overlap, thereby the detection light of halogen light source 9 and infrared light supply 3 is injected from the same plane of dimming components, be convenient to dimming components and halogen light source 9 and infrared light supply 3 detected the adjustment of light.
Please on the basis of Fig. 1 and Fig. 2 with reference to figure 4, preferably, above-mentioned halogen light source 9 is positioned at same level with the transmitting terminal of infrared light supply 3, and above-mentioned dimming components comprises:
A pentaprism 4 that is installed on support body 1, have adjacent and orthogonal the first faceted pebble 42 and the second faceted pebble 41, the first faceted pebble 42 is towards the transmitting terminal of halogen light source 9 and when vertical with the detection light of halogen light source 9 emissions, and the second faceted pebble 41 is surperficial parallel with substrate 7, as shown in Figure 1; The second faceted pebble 41 is towards the transmitting terminal of infrared light supply 3 and when vertical with the detection light of infrared light supply 3 emissions, and the first faceted pebble 42 is surperficial parallel with substrate 7, as shown in Figure 2;
Be positioned at pentaprism 4 belows, the detection photoconduction that pentaprism 4 is penetrated is to first catoptron 5 on the surface of substrate 7;
Be installed on support body 1, with the detection photoconduction of substrate 7 reflection to the second catoptron 6 that detects optical receiving end 10.
in concrete operations, halogen light source 9 emissions detect light, regulate above-mentioned pentaprism 4, make the first faceted pebble 42 vertical with the detection light of halogen light source 9 emissions, detect the lead mode of light in pentaprism 4 as shown in dotted portion in Fig. 1, finally, detect light and penetrate pentaprism perpendicular to the second faceted pebble 41, surperficial parallel due to the second faceted pebble 41 and substrate 7, detect light under the reflex of the first catoptron 5, the surface of oblique directive substrate 7, and through after substrate 7 surface reflections, the second catoptron 6 by dimming components is directed to the detection optical receiving end 10 that looks like with infrared detection unit 2 again, imaging and infrared detection unit 2 are according to the graphical analysis of imaging, detect the position coordinates of the defect point that on substrate 7, residual organic matter forms, then, be rotated counterclockwise pentaprism 4, as shown in Figure 2, the second faceted pebble 41 is vertical with the detection light of infrared light supply 3 emissions, detect light and inject pentaprism 4 by the second faceted pebble 41, and detect light and leading direction as shown in dotted line in Fig. 2 and Fig. 4 in pentaprism 4, the detection light of infrared light supply 3 penetrates pentaprism 4 perpendicular to the first faceted pebble 42, and through the first catoptron 5 reflections, the surface of oblique directive substrate 7, the detection light of substrate 7 surface reflections is directed to the detection optical receiving end 10 that looks like with infrared detection unit 2 through the second catoptron 6, imaging and infrared detection unit 2 are according to the composition of the spectral analysis residual organic matter of the detection light of infrared light supply 3.Because the transmitting terminal of halogen light source 9 and the transmitting terminal of infrared light supply 3 are positioned at same level, therefore, the detection light of the detection light of halogen light source 9 emissions and infrared light supply 3 emissions is injected pentaprism 4 in the sustained height of pentaprism 4, and all penetrate pentaprism 4 perpendicular to surface level, be convenient to 5 pairs of adjustment that detect light of the first catoptron.
The accuracy of controlling during detection position change for ease of the detection light of the detection light of adjusting halogen light source 9 and infrared light supply 3 on substrate 7, preferably, above-mentioned microscope carrier 8 can be bidirectional parallel operating mechanism, can be with substrate 7 horizontal and vertical displacement in surface level.Namely, halogen light source 9 and infrared light supply 3 are constant by the light path of the detection light on pentaprism 4 and the first catoptron 5 guiding substrate 7 surfaces, substrate 7 surface reflections are constant to the light path of the detection light of the second catoptron 6, only need to adjust microscope carrier 8 just the detection light of capable of regulating halogen light source 9 and infrared light supply 3 in the adjustment of the detection position on substrate 7 surfaces.
The receiving end of the imaging of mentioning in technique scheme and infrared detection unit 2 can be one, as depicted in figs. 1 and 2, the second catoptron is also one, catoptron 6 as shown in fig. 1, in specific operation process, after can using halogen light source 9 to confirm the position of place's residual organic matter defective, stop the motion of microscope carrier 8, then directly rotate pentaprism 4, with this position of detection light directive of infrared light supply 3, directly the residual organic matter defective of this position is carried out constituent analysis.
Certainly, as shown in Figure 3, the detection optical receiving end 10 of above-mentioned imaging and infrared detection unit 2 can also be two, comprising:
The halogen of the detection light of the halogen light source 9 of reception substrate 7 reflections detects optical receiving end 21;
The infrared detection optical receiving end 22 of the detection light of the infrared light supply 3 of reception substrate 7 reflections.
As depicted in figs. 1 and 2, when the detection optical receiving end 10 of above-mentioned imaging and infrared detection unit 2 was two, above-mentioned halogen detection optical receiving end 21 and infrared detection optical receiving end 22 were positioned at the both sides of pentaprism 4; The first catoptron 5 is rotatably mounted in support body 1, and the second catoptron comprises:
With the detection photoconduction of the infrared light supply 3 of the substrate 7 surface reflections ir reflector 62 to infrared detection optical receiving end 22;
The detection photoconduction of the halogen light source 9 of substrate 7 surface reflections is detected the halogen catoptron 61 of optical receiving end 21 to halogen.
Preferably, the accuracy when detecting with halogen light source 9 Left Indent that obtains when detecting for improving infrared light supply 3, preferably, the detection light of halogen light source 9 and the detection light of infrared light supply 3 shared one overlaps plane coordinate system.
Particularly, the imaging of mentioning in technique scheme and infrared detection unit 2 specifically comprise for the detection light of halogen light source 9 being carried out the imager of imaging, and the examination of infrared spectrum instrument that the detection light of infrared light supply 3 is carried out spectral analysis.
Obviously, those skilled in the art can carry out various changes and modification and not break away from spirit and scope of the present utility model the utility model embodiment.Like this, if within of the present utility model these are revised and modification belongs to the scope of the utility model claim and equivalent technologies thereof, the utility model also is intended to comprise these changes and modification interior.
Claims (9)
1. the pick-up unit of residual organic matter in a detection arrays basal plate making process, is characterized in that, comprising:
Support body;
Be installed on the bearing substrate in support body microscope carrier, halogen light source, infrared light supply, have the imaging that detects optical receiving end and infrared detection unit and
With the detection photoconduction of halogen light source or the infrared light supply substrate surface to the microscope carrier carrying, and with the detection photoconduction of the substrate surface reflection dimming components to described detection optical receiving end;
when described dimming components imports the detection optical receiving end at the detection light with halogen light source, described imaging and infrared detection unit are according to the detected image that detects the photogenerated substrate, described detected image is according to the plane coordinate system layout of a particular pair of bit point in substrate as true origin, when having the defect point of organic substance residues formation in described imaging and infrared detection unit judgement substrate surface, determine the position of defect point according to described plane coordinate system, then by dimming components with the detection photoconduction of the described infrared light supply position to defect point, and the detection light of defect point reflection is imported described detection optical receiving end, described imaging and infrared detection unit are according to the organic composition of detection light analyzing defect point of the infrared light supply that imports described detection optical receiving end.
2. pick-up unit according to claim 1, is characterized in that, described halogen light source is relative with the transmit direction of infrared light supply, and overlaps, and described dimming components is between halogen light source and infrared light supply.
3. pick-up unit according to claim 2, is characterized in that, the transmitting terminal of described halogen light source and described infrared light supply is positioned at same level, and described dimming components comprises:
A pentaprism that is installed on support body, have adjacent and orthogonal the first faceted pebble and the second faceted pebble, described the first faceted pebble is towards the transmitting terminal of described halogen light source and when vertical with the detection light of described halogen light source emission, and the second faceted pebble is surperficial parallel with substrate; Described the second faceted pebble is towards the transmitting terminal of described infrared light supply and when vertical with the detection light of infrared light supply emission, and the first faceted pebble is surperficial parallel with substrate;
Be positioned at pentaprism below, the detection photoconduction that pentaprism is penetrated is to first catoptron on the surface of substrate;
Be installed on described support body, with the detection photoconduction of substrate reflection to the second catoptron that detects optical receiving end.
4. pick-up unit according to claim 3, is characterized in that, described microscope carrier is bidirectional parallel operating mechanism, can be with substrate horizontal and vertical displacement in surface level.
5. pick-up unit according to claim 4, is characterized in that, described detection optical receiving end is one, and described the second catoptron is one.
6. pick-up unit according to claim 4, is characterized in that, described detection optical receiving end comprises:
The halogen of the detection light of the halogen light source of reception substrate reflection detects optical receiving end;
The infrared detection optical receiving end of the detection light of the infrared light supply of reception substrate reflection.
7. pick-up unit according to claim 6, is characterized in that, described halogen detection optical receiving end and described infrared detection optical receiving end are positioned at the both sides of described pentaprism; Described the first catoptron is rotatably mounted in described support body, and described the second catoptron comprises:
With the detection photoconduction of the infrared light supply of the substrate surface reflection ir reflector to the infrared detection optical receiving end;
The detection photoconduction of the halogen light source of substrate surface reflection is detected the halogen catoptron of optical receiving end to halogen.
8. according to claim 1 ~ 7 described pick-up units of any one, is characterized in that, the detection light of described halogen light source and the detection light of described infrared light supply share a cover plane coordinate system.
9. pick-up unit according to claim 8, is characterized in that, described imaging and infrared detection unit comprise imager and examination of infrared spectrum instrument.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220613840 CN202928966U (en) | 2012-11-19 | 2012-11-19 | Detection device for detecting residual organics in array substrate manufacturing procedure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220613840 CN202928966U (en) | 2012-11-19 | 2012-11-19 | Detection device for detecting residual organics in array substrate manufacturing procedure |
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| Publication Number | Publication Date |
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| CN202928966U true CN202928966U (en) | 2013-05-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220613840 Expired - Lifetime CN202928966U (en) | 2012-11-19 | 2012-11-19 | Detection device for detecting residual organics in array substrate manufacturing procedure |
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| CN (1) | CN202928966U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104022053A (en) * | 2014-05-20 | 2014-09-03 | 京东方科技集团股份有限公司 | Detection equipment of vacuum chamber for film formation and vacuum chamber detection method |
| CN108645793A (en) * | 2018-05-11 | 2018-10-12 | 武汉华星光电半导体显示技术有限公司 | Sample analysis component, analyzing device and sample analysis method |
-
2012
- 2012-11-19 CN CN 201220613840 patent/CN202928966U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104022053A (en) * | 2014-05-20 | 2014-09-03 | 京东方科技集团股份有限公司 | Detection equipment of vacuum chamber for film formation and vacuum chamber detection method |
| CN104022053B (en) * | 2014-05-20 | 2017-11-14 | 京东方科技集团股份有限公司 | A kind of vacuum chamber detection device and vacuum chamber detection method for film forming |
| CN108645793A (en) * | 2018-05-11 | 2018-10-12 | 武汉华星光电半导体显示技术有限公司 | Sample analysis component, analyzing device and sample analysis method |
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Granted publication date: 20130508 |