CN202903894U - Junction capacitance test circuit and device for 62mm power device - Google Patents

Junction capacitance test circuit and device for 62mm power device Download PDF

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Publication number
CN202903894U
CN202903894U CN 201220496677 CN201220496677U CN202903894U CN 202903894 U CN202903894 U CN 202903894U CN 201220496677 CN201220496677 CN 201220496677 CN 201220496677 U CN201220496677 U CN 201220496677U CN 202903894 U CN202903894 U CN 202903894U
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test
point
power
test point
circuit
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CN 201220496677
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Chinese (zh)
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成星
朱阳军
陆江
卢烁今
佘超群
高振鹏
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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Abstract

The utility model discloses a junction capacitance test circuit for a 62mm power device, and belongs to the technical field of power semiconductor device junction capacitance test devices. The circuit comprises two transistor units, a power supply connection point, a low voltage current connection point, a ground voltage connection point, a resistor, a short circuit capacitor, an inductor, a first input capacitor, a first output capacitor, a first feedback capacitor, a second input capacitor, a second output capacitor, and a second feedback capacitor. The two transistor units have a source electrode test point, a drain electrode test point, and a grid electrode test point. The utility model further discloses a device based on the junction capacitance test circuit for the 62mm power device. The test circuit and the device can be applied to the 62mm power device comprising two transistor units.

Description

A kind of junction capacity test circuit and device for the 62mm power device
Technical field
The utility model relates to the power semiconductor device junction capacitor test arrangement technical field, particularly a kind of junction capacity test circuit and device of two unit 62mm power devices.
Background technology
Power semiconductor device device junction capacity parameter generally comprises input capacitance, output capacitance, three contents of feedback capacity, is the important indicator of reaction member architectural characteristic, dynamic time parameters.According to the test condition requirement, need to according to the difference of the architectural characteristic of parameter in device, connect different measurement circuits, simultaneously during test, the passive device elements such as external bypass electric capacity, bypass resistance apply DC voltage and high-frequency signal is tested corresponding capacitance parameter to device pin.In the prior art, the method of measured power semiconductor devices junction capacity is generally: the connecting circuit between measured device and LCR (LCR) tester with test probe or crocodile clip, when adopting the method to test, for different tested junction capacity parameters, need to use different test circuits, not only test job is loaded down with trivial details, and testing efficiency is low.
For addressing the above problem, application number is 201120221050.4 to disclose a kind of power semiconductor device junction capacitor test arrangement, comprise the junction capacity testing circuit board, this junction capacity testing circuit board comprises two capacity measurement points, wherein, the first input capacitance test point links to each other with power connection points by short circuit capacitance, and power connection points links to each other with the drain electrode test point, and the second input capacitance test point is by bias inductors ground connection; Feedback capacity test point ground connection; The output capacitance test point links to each other with the grid test point, and links to each other with the source electrode test point by blocking-up resistance; The high-tension current tie point that links to each other with power connection points and the ground voltage electric current tie point that links to each other with the grid test point.Circuit when this power semiconductor device junction capacitor test arrangement will be tested different capacitance parameter is arranged in the same circuit board, and select as required the capacitance parameter of test to be communicated with corresponding test point, when using this device and testing, do not need to reconnect again circuit, simplify test job, improved testing efficiency.But this power semiconductor device junction capacity test circuit and device are only suitable in the single-chip devices with three pins, and also inapplicable to the 62mm power device that comprises two transistor units.
The utility model content
In order to address the above problem, the utility model proposes a kind of junction capacity test circuit and device for the 62mm power device.
The junction capacity test circuit that is used for the 62mm power device that the utility model provides comprises:
Two transistor units, power connection points, low-voltage current tie point, ground voltage tie point, resistance, short circuit capacitance, inductance, I input capacitance, I output capacitance, I feedback capacity, II input capacitance, II output capacitance, II feedback capacity, described two transistor units have source electrode test point, drain electrode test point and grid test point;
Described drain electrode test point is connected in described power connection points, described grid test point is connected in described low-voltage current tie point, described source electrode test point is connected in an end of described resistance, the other end of described resistance is connected in described low-voltage current tie point, described I input capacitance is connected in described power connection points by described short circuit capacitance, described I output capacitance and the unsettled setting of I feedback capacity, described II input capacitance is connected in described ground voltage tie point by described inductance, described II output capacitance is connected in described low-voltage current tie point, and described II feedback capacity is connected in described ground voltage tie point.
As preferably, described source electrode test point is linked to each other by described two transistor units source electrode separately and forms.
As preferably, described drain electrode test point is linked to each other by described two transistor unit drain electrodes separately and forms.
As preferably, described grid test point is linked to each other by described two transistor units grid separately and forms.
The utility model also provides the device based on described junction capacity test circuit for the 62mm power device, comprises described test circuit and metal case, is provided with test fixture in the described metal case, and described power device is positioned on the described test fixture; Described metal case is provided with power connector end mouth, low-voltage current connectivity port, and described power connection points is connected in described power connector end mouth, and described low-voltage current tie point is connected in described low-voltage current connectivity port; Described metal object is provided with switch module, and described switch module has the switch contact that is respectively applied to corresponding described source electrode test point, drain electrode test point and grid test point; Also be provided with the BNC coaxial cable interface on the described metal case;
Described test fixture is provided with cover plate and cover plate is buckled, and described power device is positioned between described cover plate and cover plate buckle.
As preferably, also be provided with the pin spring for each pin of fixing described two transistor units on the described test fixture.
As preferably, described switch module is change-over switch, and described change-over switch can make switch module switch between the switch contact of described source electrode test point, drain electrode test point and grid test point.
The power semiconductor device junction capacity test circuit that the utility model provides and device can be applicable to comprise the 62mm power device of two transistor units.
Description of drawings
The junction capacity test circuit synoptic diagram that is used for the 62mm power device that Fig. 1 provides for the utility model embodiment.
Embodiment
In order to understand the utility model in depth, below in conjunction with drawings and the specific embodiments the utility model is elaborated.
Referring to accompanying drawing 1, the junction capacity test circuit that is used for the 62mm power device that the utility model provides comprises:
Two transistor units 16, power connection points 1, low-voltage current tie point 2, ground voltage tie point 7, resistance 6, short circuit capacitance 8, inductance 15, I input capacitance 9, I output capacitance 10, I feedback capacity 11, II input capacitance 12, II output capacitance 13 and 14, two transistor units 16 of II feedback capacity have source electrode test point 5, drain electrode test point 3 and grid test point 4.
Drain electrode test point 3 is connected in power connection points 1, grid test point 4 is connected in low-voltage current tie point 2, source electrode test point 5 is connected in an end of resistance 6, the other end of resistance 6 is connected in low-voltage current tie point 2, I input capacitance 9 is connected in power connection points 1 by short circuit capacitance 8, I output capacitance 10 and the 11 unsettled settings of I feedback capacity, II input capacitance 12 is connected in ground voltage tie point 7 by inductance 15, II output capacitance 13 is connected in low-voltage current tie point 2, the II feedback capacities 14 and is connected in ground voltage tie point 7.
Wherein, source electrode test point 5 can form by two transistor units source electrode separately is continuous.
Wherein, drain electrode test point 3 can form by two transistor unit drain electrodes separately are continuous.
Wherein, grid test point 4 can form by two transistor units grid separately is continuous.
The utility model also provides the device that is used for the junction capacity test circuit of 62mm power device based on this, comprises test circuit and metal case, is provided with test fixture in the metal case, and power device is positioned on the test fixture; Metal case is provided with power connector end mouth, low-voltage current connectivity port, and power connection points is connected in the power connector end mouth, and the low-voltage current tie point is connected in the low-voltage current connectivity port; Metal case is provided with switch module, and switch module has the switch contact that is respectively applied to corresponding source electrode test point, drain electrode test point and grid test point; Also be provided with the BNC coaxial cable interface on the metal case; Test fixture is provided with cover plate and cover plate is buckled, and power device is positioned between cover plate and cover plate buckle, thereby, make between power device and the test fixture contact more firm.
Wherein, can also be provided with the pin spring be used to each pin of fixing two transistor units on the test fixture, thereby, make each pin fixing more firm of two transistor units.
Wherein, switch module can be change-over switch, change-over switch can make switch module switch between the switch contact of source electrode test point, drain electrode test point and grid test point, thereby, the switching of test point can be realized by switch module, this has just saved the replacing time, can improve testing efficiency.
The power semiconductor device junction capacity test circuit that the utility model provides and device can be applicable to comprise the 62mm power device of two transistor units.
Above-described embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the above only is embodiment of the present utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any modification of making, be equal to replacement, improvement etc., all should be included within the protection domain of the present utility model.

Claims (7)

1. a junction capacity test circuit that is used for the 62mm power device is characterized in that, comprising:
Two transistor units, power connection points, low-voltage current tie point, ground voltage tie point, resistance, short circuit capacitance, inductance, I input capacitance, I output capacitance, I feedback capacity, II input capacitance, II output capacitance, II feedback capacity, described two transistor units have source electrode test point, drain electrode test point and grid test point;
Described drain electrode test point is connected in described power connection points, described grid test point is connected in described low-voltage current tie point, described source electrode test point is connected in an end of described resistance, the other end of described resistance is connected in described low-voltage current tie point, described I input capacitance is connected in described power connection points by described short circuit capacitance, described I output capacitance and the unsettled setting of I feedback capacity, described II input capacitance is connected in described ground voltage tie point by described inductance, described II output capacitance is connected in described low-voltage current tie point, and described II feedback capacity is connected in described ground voltage tie point.
2. test circuit according to claim 1 is characterized in that, described source electrode test point is linked to each other by described two transistor units source electrode separately and forms.
3. test circuit according to claim 1 is characterized in that, described drain electrode test point is linked to each other by described two transistor unit drain electrodes separately and forms.
4. test circuit according to claim 1 is characterized in that, described grid test point is linked to each other by described two transistor units grid separately and forms.
5. the device based on the junction capacity test circuit for the 62mm power device claimed in claim 1 comprises described test circuit and metal case, is provided with test fixture in the described metal case, and described power device is positioned on the described test fixture; Described metal case is provided with power connector end mouth, low-voltage current connectivity port, and described power connection points is connected in described power connector end mouth, and described low-voltage current tie point is connected in described low-voltage current connectivity port; Described metal case is provided with switch module, and described switch module has the switch contact that is respectively applied to corresponding described source electrode test point, drain electrode test point and grid test point; Also be provided with the BNC coaxial cable interface on the described metal case; It is characterized in that,
Described test fixture is provided with cover plate and cover plate is buckled, and described power device is positioned between described cover plate and cover plate buckle.
6. device according to claim 5 is characterized in that, also is provided with the pin spring for each pin of fixing described two transistor units on the described test fixture.
7. device according to claim 5 is characterized in that, described switch module is change-over switch, and described change-over switch can make switch module switch between the switch contact of described source electrode test point, drain electrode test point and grid test point.
CN 201220496677 2012-09-26 2012-09-26 Junction capacitance test circuit and device for 62mm power device Active CN202903894U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220496677 CN202903894U (en) 2012-09-26 2012-09-26 Junction capacitance test circuit and device for 62mm power device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220496677 CN202903894U (en) 2012-09-26 2012-09-26 Junction capacitance test circuit and device for 62mm power device

Publications (1)

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CN202903894U true CN202903894U (en) 2013-04-24

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108333433A (en) * 2018-01-08 2018-07-27 杭州长川科技股份有限公司 Junction capacity parameter detecting circuit and its test method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108333433A (en) * 2018-01-08 2018-07-27 杭州长川科技股份有限公司 Junction capacity parameter detecting circuit and its test method
CN108333433B (en) * 2018-01-08 2020-05-05 杭州长川科技股份有限公司 Junction capacitance parameter test circuit and test method thereof

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