CN202871857U

CN202871857U - LED package structure

Info

Publication number: CN202871857U
Application number: CN2012205409815U
Authority: CN
Inventors: 苏水源
Original assignee: Xiamen Dacol Photoelectronics Technology Co Ltd
Current assignee: Xiamen Dacol Photoelectronics Technology Co Ltd
Priority date: 2012-10-22
Filing date: 2012-10-22
Publication date: 2013-04-10
Anticipated expiration: 2022-10-22

Abstract

The utility model relates to a LED. A LED package structure comprises a LED chip, a support, a silica gel layer, a phosphor layer and an optics lens; the support is provided with a bowl for placing the LED chip, a positive conduction pin and a negative conduction pin for leading an anode and a cathode of the LED chip through wires, and a base for cladding the positive conduction pin and the negative conduction pin; the LED chip is placed in the bowl of the support, the silica gel layer is arranged between the LED chip and the phosphor layer, and the silica gel layer completely covers the LED chip; and the optics lens is arranged above the phosphor layer. The LED package structure is applied for improvement of the LED package structure.

Description

A kind of LED encapsulating structure

Technical field

The utility model relates to LED(Light-Emitting Diode, light-emitting diode), relate in particular to a kind of LED encapsulating structure by far field excitation.

Background technology

Because the continuous progress of solid state light emitter (Solid State Lighting) technology, make in recent years that the luminous efficiency of LED promotes, can replace conventional light source gradually, luminous efficiency has had the heels of incandescent lamp and Halogen lamp LED and has continued upwards to grow up at present.And some companies have developed the LED element that efficient breaks through 200Lm/W more, this is also so that the illumination of LED is used more and more wider, not only begun to be applied to indoor and outdoor lighting, mobile phone backlight module and directing light of automobile etc., more good in high wattage projecting lamp and the application of floodlighting, large scale backlight module and the auto bulb etc. such as street lamp.Owing to have the advantages such as power saving, environmental protection and life-span length, more make following trend take the LED light source as main flow get over obviously.

Realize that a LED goes out white light a variety of modes are arranged, the RGB chip portfolio is arranged, the blue chip excitated fluorescent powder is arranged, UV chip excitated fluorescent powder etc. is arranged, the most frequently used mode is to apply fluorescent material and realize white light reflection at blue light or black light led chip at present.Utilize the blue light (420nm-470nm) of led chip emission or black light (370nm-410nm) as principal spectrum, fluorescent material absorbs and is stimulated behind the principal spectrum and produces the inferior spectrum longer than principal spectrum wavelength, thereby is converted to dual wavelength or three-wavelength white light.In the said process, encapsulating structure and technology that fluorescent material (fluorescent material) covers LED then are the key technologies that white light LEDs is made.

The covering of fluorescent material normally by fluorescent powder grain and silica gel (perhaps other organic carriers) are mixed into glue, then is coated in the surface of blue light or black light led chip.The encapsulation flow process of existing white light LEDs can be divided into following step:

1, fixed chip: led chip is fixed on support or the substrate with glue or scolding tin, and support or the substrate that then will be placed with led chip are put the baking box baking into, make adhesive curing;

2, electrode bonding wire: the p/n electrode of led chip is soldered to the mode of bonding wire on the pad of metallic circuit of support or substrate;

3, fluorescent material applies: at first fluorescent material and silica gel (perhaps other organic carriers) are deployed into fluorescent glue, and fully stir, stirring directly is coated to the top of led chip with dispensing needle head or other spot gluing equipments with above-mentioned fluorescent glue afterwards, forms phosphor powder layer.

Great power LED usually also can increase transparent organic silicon glue again on phosphor powder layer, thereby realizes the lens of hemisphere or other optic shape.

LED encapsulating structure through above-mentioned encapsulation flow processing directly is coated in fluorescent material on the led chip, has following shortcoming:

1, fluorescent material often reduces with the rising of temperature absorption intensity and the light conversion efficiency of principal spectrum; And above-mentioned fluorescent material directly is coated on the led chip, and the led chip normal operation time can be generated heat, and therefore the temperature of fluorescent material also can raise, and has affected activity and the conversion efficiency of fluorescent material, and then has affected the Performance And Reliability of white light LEDs;

2, fluorescent material directly is coated on the led chip, also can cause its unsteadiness in the situation of being heated, such as the drift of colour temperature, the variation of color rendering index etc.Because temperature is when affecting the activity of fluorescent material, the optical wavelength that also fluorescent material is excited produces certain impact, rising along with the led chip temperature, the fluorescent material activity is in inactivation gradually, light wavelength that fluorescent material sends is also along with red skew occurs, be that the light-emitting phosphor wavelength is offset towards red wavelength, cause colour temperature and color to be offset.Thereby cause the characteristics of luminescence variation of fluorescent material, can produce thus brightness decline and colourity and change;

3, fluorescent material directly is coated on the led chip, so that fluorescent material performance degradation under higher temperature, and then causes the light decay of white light LEDs;

4, in addition, also have fluorescent material precipitation and mixing uniformity problem, gel quantity is inhomogeneous during point glue, causes colour temperature and consistency of colour good not.

The utility model content

Technical problem to be solved in the utility model is, provides that a kind of light extraction efficiency is high, the stable LED encapsulating structure of bright dipping, by with fluorescent material and led chip separately, solves that fluorescent material directly is coated in the problem that led chip causes in the prior art.

In order to solve the problems of the technologies described above, the technical scheme that the utility model adopts is, a kind of LED encapsulating structure comprises led chip, support, layer of silica gel, phosphor powder layer, is attached with ITO(Indium Tin Oxides, nano indium tin metal oxide) optical lens of conductive layer.The positive conductive feet that wherein said support is provided with the cup of placing led chip, draw the both positive and negative polarity of led chip by wire and negative conductive feet and the pedestal that coats above-mentioned positive conductive feet and negative conductive feet; Described led chip is positioned in the cup of described support, and described layer of silica gel is located between described led chip and the phosphor powder layer, and described layer of silica gel covers described led chip fully; Described optical lens is located on the described phosphor powder layer.

Further, the non-exiting surface of described optical lens is provided with the ITO conductive layer; Described optical lens is solid construction, and its outer surface does not have conducting function, is the free form surface shape, can be simultaneously as the secondary lens structure.

Further, the bottom of described ITO conductive layer is rough matsurface, can solve the hot spot problem.

Further, described optical lens is the high index of refraction optical lens, and its refractive index is greater than 1.4.

Further, described phosphor powder layer is coated on described ITO conductive layer bottom by the mode of electrophoretic deposition.Wherein, the thickness range of described phosphor powder layer is 10-90um.

Further, described layer of silica gel is the soft silica gel of high index of refraction, and refractive index is greater than 1.45.

The utility model separates phosphor powder layer and led chip by adopting said structure, and fluorescent material directly is coated in the problem that led chip causes in the solution prior art; Simultaneously, phosphor powder layer is coated on inner lens surfaces by electrophoretic, and phosphor powder layer is fine and close, and thickness is controlled and thin, and the contrast prior art can effectively solve LED hot spot problem; The outer surface of glass lens is free form surface simultaneously, has increased light emission rate, also can reduce the hot spot problem when improving light efficiency.

Description of drawings

Fig. 1 is the support schematic diagram (containing led chip) of embodiment of the present utility model.

Fig. 2 is the optical lens schematic diagram of embodiment of the present utility model.

Fig. 3 is the overall structure schematic diagram of embodiment of the present utility model.

Embodiment

Now with embodiment the utility model is further specified by reference to the accompanying drawings.

As specific embodiment of the utility model, such as Fig. 1, Fig. 2 and shown in Figure 3, a kind of LED encapsulating structure comprises led chip 1, support 2, layer of silica gel 3, phosphor powder layer 4, optical lens 5.

The positive conductive feet that its medium-height trestle 2 is provided with the cup 21 of placing led chip 1, draw the both positive and negative polarity of led chip 1 by wire 22 and negative conductive feet and the pedestal that coats above-mentioned positive conductive feet and negative conductive feet; Described led chip 1 is positioned in the cup 21 of described support 2, described layer of silica gel 3 is located between described led chip 1 and the phosphor powder layer 4, and described layer of silica gel 3 covers described led chip 1 fully, and described layer of silica gel 3 is the soft silica gel of high index of refraction, and refractive index is greater than 1.45; Described optical lens 5 is located on the described phosphor powder layer 4.

Described optical lens 5 is the high index of refraction optical lens, and its refractive index is greater than 1.4.The non-exiting surface of described optical lens 5 is provided with ITO conductive layer 51; Described optical lens 5 is solid construction, and its outer surface is the free form surface shape.For solving the hot spot problem, the bottom of described ITO conductive layer 51 is rough matsurfaces.

Described phosphor powder layer 4 is ITO conductive layer 51 bottoms that are coated on described optical lens 5 by the mode of electrophoretic deposition.Wherein, the thickness range of described phosphor powder layer 4 is 10-90um.

Although specifically show and introduced the utility model in conjunction with preferred embodiment; but the those skilled in the art should be understood that; within not breaking away from the spirit and scope of the present utility model that appended claims limits; can make a variety of changes the utility model in the form and details, be protection range of the present utility model.

Claims

1. a LED encapsulating structure is characterized in that: comprise led chip, support, layer of silica gel, phosphor powder layer, optical lens; The positive conductive feet that described support is provided with the cup of placing led chip, draw the both positive and negative polarity of led chip by wire and negative conductive feet and the pedestal that coats above-mentioned positive conductive feet and negative conductive feet; Described led chip is positioned in the cup of described support, and described layer of silica gel is located between described led chip and the phosphor powder layer, and described layer of silica gel covers described led chip fully; Described optical lens is located on the described phosphor powder layer.

2. a kind of LED encapsulating structure according to claim 1, it is characterized in that: the non-exiting surface of described optical lens is provided with the ITO conductive layer.

3. a kind of LED encapsulating structure according to claim 2, it is characterized in that: the bottom of described ITO conductive layer is rough matsurface.

4. it is characterized in that according to claim 2 or 3 described a kind of LED encapsulating structures: described optical lens is refractive index greater than 1.4 optical lens.

5. a kind of LED encapsulating structure according to claim 1 is characterized in that: described phosphor powder layer is coated on described ITO conductive layer bottom by the mode of electrophoretic deposition.

6. a kind of LED encapsulating structure according to claim 5, it is characterized in that: the thickness range of described phosphor powder layer is 10-90um.

7. a kind of LED encapsulating structure according to claim 1 is characterized in that: described layer of silica gel is refractive index greater than 1.45 soft silica gel.