CN202871793U - Light emitting diode structure with improved electrostatic protection - Google Patents
Light emitting diode structure with improved electrostatic protection Download PDFInfo
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- CN202871793U CN202871793U CN 201220523810 CN201220523810U CN202871793U CN 202871793 U CN202871793 U CN 202871793U CN 201220523810 CN201220523810 CN 201220523810 CN 201220523810 U CN201220523810 U CN 201220523810U CN 202871793 U CN202871793 U CN 202871793U
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Abstract
The utility model relates to a light emitting diode structure with improved electrostatic protection. The structure comprises a substrate, a first electrode and a second electrode, a buffer layer and an N type semiconductor layer is arranged on the substrate in sequence, and the structure is characterized in that the N type semiconductor layer and the buffer layer are divided into a first island structure, a second island structure and a third island structure, an active layer and a P type semiconductor layer are arranged on the second island structure and the third island structure in sequence, and the P type semiconductor layer in the third island structure is provided with a transparent conductive layer; a passivation layer is arranged on the P type semiconductor layer and the transparent conductive layer in the first island structure and the second island structure, the first electrode passes through the passivation layer and the transparent conductive layer and is connected with the N type semiconductor layer in the second island structure, and the second electrode passes through the passivation layer and is connected with the N type semiconductor layer in the first island structure and the P type semiconductor layer in the second island structure. The light emitting diode structure with improved electrostatic protection effectively improves electrostatic protection, reduces damage brought by static electricity, and prolongs the service life of an LED chip.
Description
Technical field
The utility model relates to a kind of led chip structure, and especially a kind of structure of improving the light-emitting diode of electrostatic defending belongs to the led chip technical field.
Background technology
Electrostatics be 18th century take Coulomb's law as Foundation, to study the subject of static electric charge and magnetic fields rule, be an electromagnetic important component part in the physics.
Static is ubiquitous in we live at ordinary times, but in the twentieth century 40-50 age, semiconductor industry seldom has electrostatic problem, because be at that time transistor and diode, and the static that produces is also not as now general.In the sixties, along with the appearance to the highstrung MOS device of static, electrostatic problem is paid close attention to by people gradually.The 70-90 age, along with the density of integrated circuit is increasing, the thickness of its silicon dioxide film of one side more and more thinner (micron one nanometer), its electrostatic potential that bears is more and more lower; On the other hand, produce and material such as the plastics of accumulation static, rubber etc. are a large amount of to be used, so that electrostatic phenomenon ubiquity more and more.
In twentieth century mid-term, a lot of electrostatic problems all are because people do not have ESD(Electro-Static discharge, and static discharges) consciousness causes.Even also there are now a lot of people to suspect whether ESD can cause damage to electronic product, this is because most of ESD infringement occurs in beyond people's the sensation.Because human body is about 3KV to the sense voltage of static discharge, and many electronic components will damage when several hectovolts even tens volts, usually electronic device does not have obvious boundary to after being damaged by ESD, detect again after being installed in element on the pcb board, a lot of problems appear in the result, analyze also difficult.Particularly potential damage, namely using precision instrument also to be difficult to measure its performance has significant change, so a lot of Electronics Engineer and designer suspect the harm of ESD, but experiment confirm in recent years, this potential damage is after certain hour, and the reliability of electronic product obviously descends.
So along with the raising of present semiconductor process technology, it is more and more meticulousr that electronic product is also made.Electrostatic defending for electronic product is quite necessary.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of structure of improving the light-emitting diode of electrostatic defending is provided, and can improve the harm that static brings, and improves the effect of electrostatic defending, prolongs led chip device useful life.
The technical scheme that provides according to the utility model, the described structure of improving the light-emitting diode of electrostatic defending, comprise substrate, n type semiconductor layer, p type semiconductor layer, the first electrode and the second electrode, set gradually resilient coating and n type semiconductor layer on the substrate, resilient coating is covered on the substrate, n type semiconductor layer is covered on the resilient coating, it is characterized in that: described n type semiconductor layer and resilient coating are distinguished into the first island structure, the second island structure and the 3rd island structure; Set gradually active layer and p type semiconductor layer at described the second island structure and the 3rd island structure, the p type semiconductor layer on the 3rd island structure arranges transparency conducting layer; P type semiconductor layer, transparency conducting layer on described the first island structure, the second island structure arrange passivation layer, and this passivation layer coats p type semiconductor layer on groove, the second island structure and the second island structure between groove, the second island structure and the 3rd island structure between the first island structure, the first island structure and the second island structure and transparency conducting layer, p type semiconductor layer and the active layer on active layer, the 3rd island structure and the 3rd island structure; Described the first electrode passes respectively passivation layer and transparency conducting layer and is connected with the n type semiconductor layer of being connected in the island structure; The n type semiconductor layer that described the second electrode passes respectively in passivation layer and the first island structure is connected with the p type semiconductor layer of being connected on the island structure; Active layer on described the first electrode, the first island structure, the 3rd island structure, the 3rd island structure and p type semiconductor layer consist of the main diode, and the active layer on described the second electrode, the second island structure, the second island structure and p type semiconductor layer consist of secondary diode.
The degree of depth of the groove between the groove between described the first island structure and the second island structure and the second island structure and the 3rd island structure is 7 μ m.
10% of the area of described secondary diode≤main diode area.
The material of described passivation layer is silicon dioxide or silicon nitride.
Described substrate is sapphire substrate or silicon carbide substrate.
Described the first electrode, the second electrode are the single or multiple lift metal.
Described the first electrode, the second electrode are Cr, Pt, Au multiple layer metal or Ni, Au multiple layer metal, Ti, Au multiple layer metal or Ti, Pt, Au multiple layer metal.
The material of described transparency conducting layer is single-layer metal, multiple layer metal, single metal oxide or multiple layer metal oxide.
The advantage of light-emitting diode described in the utility model is:
(1), because the area of secondary diode is less, the luminous efficiency of main diode is not had much impact substantially;
(2), simple and compact for structure, compatible mutually with existing processing technology, can realize that fully volume production makes;
(3), effectively raise electrostatic defending, reduce the damage that static brings, prolonged led chip useful life, safe and reliable.
Description of drawings
Fig. 1 is the equivalent circuit diagram of diode structure described in the utility model.
Fig. 2 is structure cutaway view of the present utility model.Fig. 3 is the vertical view of Fig. 2.
Fig. 4 is the structure cutaway view of the employed epitaxial wafer of the utility model.
Fig. 5 is the structure cutaway view that obtains main diode region and secondary diode district.
Fig. 6 is the vertical view of Fig. 5.
Fig. 7 is the structure cutaway view that obtains the n type semiconductor layer platform.
Fig. 8 is the vertical view of Fig. 7.
Fig. 9 is the structure cutaway view that obtains transparency conducting layer.
Figure 10 is the vertical view of Fig. 9.
Figure 11 is the structure cutaway view that obtains passivation layer.
Figure 12 is the vertical view in secondary diode district among Figure 11.
Figure 13 is the structure cutaway view that obtains behind the light-emitting diode.
Embodiment
The utility model is described in further detail below in conjunction with concrete accompanying drawing.
Such as Fig. 2 ~ shown in Figure 13: the utility model comprises p type semiconductor layer 1, active layer 2, n type semiconductor layer 3, resilient coating 4, substrate 5, transparency conducting layer 6, passivation layer 7, the first electrode 8, the first island structure 9, the second island structure 10, the 3rd island structure 11, the second electrode 12, main diode 100, secondary diode 200.
As shown in Figure 2, the utility model comprises substrate 5, set gradually resilient coating 4 and n type semiconductor layer 3 on the substrate 5, resilient coating 4 is covered on the substrate 5, n type semiconductor layer 3 is covered on the resilient coating 4, and described n type semiconductor layer 3 and resilient coating 4 are distinguished into the first island structure 9, the second island structure 10 and the 3rd island structure 11; Set gradually active layer 2 and p type semiconductor layer 1 at described the second island structure 10 and the 3rd island structure 11, the p type semiconductor layer 1 on the 3rd island structure 11 arranges transparency conducting layer 6; P type semiconductor layer 1, transparency conducting layer 6 on described the first island structure 9, the second island structure 10 arrange passivation layer 7, the p type semiconductor layer 1 on groove, the second island structure 10 and the second island structure 10 between groove, the second island structure 10 and the 3rd island structure 11 that this passivation layer 7 coats between the first island structure 9, the first island structure 9 and the second island structure 10 and transparency conducting layer 6, p type semiconductor layer 1 and the active layer 2 on active layer 2, the 3rd island structure 11 and the 3rd island structure 11;
As shown in Figure 2, described the first electrode 8 passes respectively passivation layer 7 and transparency conducting layer 6 and is connected with the n type semiconductor layer 3 of being connected in the island structure 11; The n type semiconductor layer 3 that described the second electrode 12 passes respectively in passivation layer 7 and the first island structure 9 is connected with the p type semiconductor layer 1 of being connected on the island structure 10; In addition, active layer 2 on described the first electrode 8, the first island structure 9, the 3rd island structure 11, the 3rd island structure 11 and p type semiconductor layer 1 consists of main diode 100, and active layer 2 and p type semiconductor layer 1 on described the second electrode 12, the second island structure 10, the second island structure 10 consist of secondary diode 200; Thereby main diode 100 is connected head and the tail and is connected with secondary diode, and the P utmost point of main diode 100 extremely links to each other with the N of secondary diode 200, and the N utmost point of main diode 100 extremely links to each other with the P of secondary diode 200, forms the loop; Described main diode 100 and secondary diode 200 join end to end, but independent of one another and secondary diode 200 does not affect the luminous intensity of main diode 200;
The degree of depth of the groove between the groove between described the first island structure 9 and the second island structure 10 and the second island structure 10 and the 3rd island structure 11 is 7 μ m;
In order to make secondary diode 200 not affect the luminous intensity of main diode 100,10% of the area of described secondary diode 200≤main diode 100 areas;
Described transparency conducting layer 6 is single-layer metal, multiple layer metal, single metal oxide or multiple layer metal oxide;
The material of described passivation layer 7 is silicon dioxide or silicon nitride;
Described substrate 5 is sapphire substrate or silicon carbide substrate;
Described the first electrode 8, the second electrode 12 are Cr, Pt, Au multiple layer metal or Ni, Au multiple layer metal, Ti, Au multiple layer metal or Ti, Pt, Au multiple layer metal.
Such as Fig. 2 ~ shown in Figure 13: light-emitting diode described in the utility model is realized by following processing step:
(1) as shown in Figure 4, provide the epitaxial wafer that cleaned, this epitaxial wafer comprises substrate 5, resilient coating 4, n type semiconductor layer 3, active layer 2 and p type semiconductor layer 1 from bottom to up successively;
(2) such as Fig. 5, shown in Figure 6, produce pattern at epitaxial wafer with the method for photoetching, then utilize dry method or wet etching with this pattern etch to substrate 5, etching depth is that dash area is etched portions among 7 μ m(Fig. 6), thus epitaxial wafer is distinguished into the main diode region 101 of secondary diode district 201 and the pattern outside of pattern inside; Main diode region 101 and secondary diode district 201 are separate, not connected;
(3) such as Fig. 7, shown in Figure 8, utilize optical graving to make the figure of main diode 100 and secondary diode 200 in main diode region 101 and secondary diode district 201, recycling dry method or wet method are carried out etching, etching depth is 1.5 μ m, so that n type semiconductor layer 3 parts in main diode region 101 and secondary diode district 201 are exposed out, form respectively in main diode region 101 and secondary diode district 201 that dash area is non-etched area among n type semiconductor layer platform 14,15(Fig. 8); The purpose of step (3) is to be convenient to follow-up at n type semiconductor layer 3 making electrodes;
(4) such as Fig. 9, shown in Figure 10, after epitaxial wafer surface after step (3) processed is cleaned, not etch areas sputter layer of transparent conductive layer 6 to main diode region 201, and adopt wet etching to go out profile along the edge of transparency conducting layer 6, the width of this profile is 6 μ m, to prevent that transparency conducting layer 6 from entering into the raceway groove of p type semiconductor layer 1 and n type semiconductor layer 3, causes electric leakage; The transmissivity of this transparency conducting layer 6 reaches more than 90%, and the purpose of making transparency conducting layer 6 is to make ohmic contact (dash area among Figure 10 is transparency conducting layer 6);
(5) such as Fig. 3, Figure 11, Figure 12, shown in Figure 13, the surface of the epitaxial loayer after processing through step (4) utilizes chemical vapour deposition technique plating one deck passivation layer 7, be not subjected to the erosion of air, acid, aqueous slkali for the protection of chip, the connecting electrode that prevents simultaneously main diode 100, secondary diode 200 rides in the raceway groove of step (2) etching formation, cause the direct conducting of PN, cause electric leakage; Because the passivation layer 7 of sedimentation evaporation is deposited on all surface of epitaxial loayer, need to leave the first electrode window through ray 16 at transparency conducting layer 6 and the n type semiconductor layer platform 15 of main diode region 101, lead platform 14 at the p type semiconductor layer 1 in secondary diode district 201 and N type semiconductor and leave the second electrode window through ray 17;
(6) utilize electron beam evaporation plating, sputtering method or other evaporation coating methods, plate respectively the first electrode 8 and the second electrode 12 in the first electrode window through ray 16 and the second electrode window through ray 17, again by peeling off the pattern that forms required electrode; Described the first electrode 8 and the second electrode 12 can adopt Cr, Pt, Au multiple layer metal, Ni, Au multiple layer metal, Ti, Au multiple layer metal or Ti, Pt, Au multiple layer metal, the height of the first electrode 8 and the second electrode 12 is 10000 dusts, if Au is then highly more than at least 6000 dusts; Because existing routing linewidth requirements in industry, electrode radius or width be at least more than the 70 μ m.
As shown in Figure 1, be the equivalent circuit diagram of the diode structure of Fig. 2, the utility model is together in series two diode P utmost points and the N utmost point, gives forward conduction voltage of one of them diode, and another diode is because the one-way conduction principle is in not on-state.When source voltage increases suddenly when providing a larger magnitude of voltage, this design can provide a current circuit, avoids because large voltage acts directly on the diode, with diode breakdown.This design can effectively reach the purpose of antistatic.
Claims (8)
1. structure of improving the light-emitting diode of electrostatic defending, comprise substrate (5), n type semiconductor layer (3), p type semiconductor layer (1), the first electrode (8) and the second electrode (12), set gradually resilient coating (4) and n type semiconductor layer (3) on the substrate (5), resilient coating (4) is covered on the substrate (5), n type semiconductor layer (3) is covered on the resilient coating (4), it is characterized in that: described n type semiconductor layer (3) and resilient coating (4) are distinguished into the first island structure (9), the second island structure (10) and the 3rd island structure (11); Set gradually active layer (2) and p type semiconductor layer (1) at described the second island structure (10) and the 3rd island structure (11), the p type semiconductor layer (1) on the 3rd island structure (11) arranges transparency conducting layer (6); At described the first island structure (9), p type semiconductor layer (1) on the second island structure (10), passivation layer (7) is set on the transparency conducting layer (6), and this passivation layer (7) coats the first island structure (9), groove between the first island structure (9) and the second island structure (10), groove between the second island structure (10) and the 3rd island structure (11), p type semiconductor layer (1) on the second island structure (10) and the second island structure (10) and active layer (2), transparency conducting layer (6) on the 3rd island structure (11) and the 3rd island structure (11), p type semiconductor layer (1) and active layer (2); Described the first electrode (8) passes respectively passivation layer (7) and transparency conducting layer (6) and is connected with the n type semiconductor layer (3) of being connected in the island structure (11); The n type semiconductor layer (3) that described the second electrode (12) passes respectively in passivation layer (7) and the first island structure (9) is connected with the p type semiconductor layer (1) of being connected on the island structure (10); Active layer (2) on described the first electrode (8), the first island structure (9), the 3rd island structure (11), the 3rd island structure (11) and p type semiconductor layer (1) consist of main diode (100), and the active layer (2) on described the second electrode (12), the second island structure (10), the second island structure (10) and p type semiconductor layer (1) consist of secondary diode (200).
2. the structure of improving the light-emitting diode of electrostatic defending as claimed in claim 1, it is characterized in that: the degree of depth of the groove between the groove between described the first island structure (9) and the second island structure (10) and the second island structure (10) and the 3rd island structure (11) is 7 μ m.
3. the structure of improving the light-emitting diode of electrostatic defending as claimed in claim 1 is characterized in that: 10% of the area of described secondary diode (200)≤main diode (100) area.
4. the structure of improving the light-emitting diode of electrostatic defending as claimed in claim 1, it is characterized in that: the material of described passivation layer (7) is silicon dioxide or silicon nitride.
5. the structure of improving the light-emitting diode of electrostatic defending as claimed in claim 1, it is characterized in that: described substrate (5) is sapphire substrate or silicon carbide substrate.
6. the structure of improving the light-emitting diode of electrostatic defending as claimed in claim 1, it is characterized in that: described the first electrode (8), the second electrode (12) are the single or multiple lift metal.
7. the structure of improving the light-emitting diode of electrostatic defending as claimed in claim 6, it is characterized in that: described the first electrode (8), the second electrode (12) are Cr, Pt, Au multiple layer metal or Ni, Au multiple layer metal, Ti, Au multiple layer metal or Ti, Pt, Au multiple layer metal.
8. the structure of improving the light-emitting diode of electrostatic defending as claimed in claim 1, it is characterized in that: the material of described transparency conducting layer (6) is single-layer metal, multiple layer metal, single metal oxide or multiple layer metal oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220523810 CN202871793U (en) | 2012-10-13 | 2012-10-13 | Light emitting diode structure with improved electrostatic protection |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220523810 CN202871793U (en) | 2012-10-13 | 2012-10-13 | Light emitting diode structure with improved electrostatic protection |
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| CN202871793U true CN202871793U (en) | 2013-04-10 |
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| CN 201220523810 Expired - Fee Related CN202871793U (en) | 2012-10-13 | 2012-10-13 | Light emitting diode structure with improved electrostatic protection |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102945853A (en) * | 2012-10-13 | 2013-02-27 | 江苏新广联科技股份有限公司 | Structure of light-emitting diode structure for improving electrostatic protection and manufacturing method of same |
| EP3188241A1 (en) * | 2015-12-30 | 2017-07-05 | Lextar Electronics Corp. | Light-emitting diode chip |
-
2012
- 2012-10-13 CN CN 201220523810 patent/CN202871793U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102945853A (en) * | 2012-10-13 | 2013-02-27 | 江苏新广联科技股份有限公司 | Structure of light-emitting diode structure for improving electrostatic protection and manufacturing method of same |
| EP3188241A1 (en) * | 2015-12-30 | 2017-07-05 | Lextar Electronics Corp. | Light-emitting diode chip |
| US10283497B2 (en) | 2015-12-30 | 2019-05-07 | Lextar Electronics Corporation | Light-emitting diode chip |
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Legal Events
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130410 Termination date: 20151013 |
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| EXPY | Termination of patent right or utility model |