CN202855736U - TFT array substrate, and quantum dot light-emitting diode display device - Google Patents
TFT array substrate, and quantum dot light-emitting diode display device Download PDFInfo
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- CN202855736U CN202855736U CN 201220574835 CN201220574835U CN202855736U CN 202855736 U CN202855736 U CN 202855736U CN 201220574835 CN201220574835 CN 201220574835 CN 201220574835 U CN201220574835 U CN 201220574835U CN 202855736 U CN202855736 U CN 202855736U
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Abstract
The utility model discloses a TFT array substrate, and a quantum dot light-emitting diode display device. A halftone mask plate and a hydrogen peroxide etching solution are adopted, the pattern of an oxide semiconductor layer can be formed on the oxide semiconductor layer and the pattern of the source and the drain can be formed on a source-drain layer through the one-step patterning process, so that the source and the drain can be directly arranged on the oxide semiconductor layer in the TFT structure without arranging an etching blocking layer between the source and the oxide semiconductor layer and between the drain and the oxide semiconductor layer. Moreover, the top gate type structure of the TFT structure is applied into the structure of the QD-LED display device, so the TFT array substrate and the QD-LED device having the advantage of simple structure can be realized, the production process is simplified, and the production cost is reduced.
Description
Technical field
The utility model relates to the Display Technique field, relates in particular to a kind of tft array substrate and light emitting diode with quantum dots display device.
Background technology
At present, the TFT of the thin-film transistor that uses in the active-matrix display panel (TFT) array base palte is comprised of the grid that sets gradually, oxide semiconductor layer and source-drain electrode, in its preparation process, be subject to preparation technology's restriction, generally can between oxide semiconductor layer and source-drain electrode, etching barrier layer be set, to prevent that when the source-drain electrode layer is carried out composition etching liquid is on being positioned at the oxide semiconductor layer impact of its lower floor.And the etching barrier layer that arranges can increase the preparation technology of TFT in preparation process.
Quantum dot can be described as again nanocrystalline, is a kind of nano particle that is comprised of II-VI family or III-V family element.The particle diameter of quantum dot is generally between 1～10nm, because electronics and hole be by quantum confinement, continuous band structure becomes the discrete energy levels structure with molecular characterization, can emitting fluorescence after being excited.Can control by the size that changes quantum dot the emission spectrum of quantum dot, can make its emission spectrum cover whole visible region by the size of change quantum dot and its chemical composition.Take the CdTe quantum as example, when its particle diameter grew into 4.0nm from 2.5nm, their emission wavelength can be from the 510nm red shift to 660nm.
At present, quantum dot is as a kind of display material and be widely used in the demonstration field, the display device that utilizes quantum dot to produce as luminescent material is called light emitting diode with quantum dots display device (QD-LED, Quantum Dot Light-Emitting Display).Structure and organic elctroluminescent device (OLED that existing QD-LED display device adopts, Organic Light-Emitting Display) similar, yet the preparation of existing QD-LED display device needs more processing step, preparation efficiency is lower, and the product yield of producing is also lower, has increased production cost.
The utility model content
The utility model embodiment provides a kind of tft array substrate and light emitting diode with quantum dots display device, in order to optimize existing tft array substrate and QD-LED device architecture and preparation technology, reduces production costs.
The utility model embodiment provides a kind of thin-film transistor tft array substrate, and the source-drain electrode in the TFT of described tft array substrate structure directly is arranged on the oxide semiconductor layer.
The utility model embodiment provides a kind of light emitting diode with quantum dots display device, comprising:
Lower underlay substrate;
Be positioned at the oxide semiconductor layer on the described lower underlay substrate;
Directly be arranged at the source-drain electrode on the described oxide semiconductor layer, described source-drain electrode is put the formation channel structure relatively;
Be positioned at the insulating barrier on the described source-drain electrode, the position that described insulating barrier is corresponding with the open area of each pixel cell has one or more microcellular structures;
Be arranged in the quantum dot light emitting layer of the microcellular structure of described insulating barrier;
Be positioned at the transparency electrode on the described insulating barrier;
Directly be arranged on the described transparency electrode and be positioned at the grid of described channel structure top; And,
Be positioned at the upper underlay substrate on the described grid.
The beneficial effect of the utility model embodiment comprises:
A kind of tft array substrate that the utility model embodiment provides and light emitting diode with quantum dots display device, adopt intermediate tone mask plate and hydrogen peroxide etching liquid, can form respectively by a composition technique figure of oxide semiconductor layer at oxide semiconductor layer, and the figure that forms source-drain electrode at the source-drain electrode layer, like this, just can in the TFT structure, source-drain electrode be set directly on the oxide semiconductor layer, not be used in etching barrier layer is set between the two; And with the top gate type structure applications of this TFT structure in the structure of QD-LED display device, can the simple tft array substrate of implementation structure and QD-LED device, save its fabrication processing, reduced production cost.
Description of drawings
One of structural representation of the QD-LED that Fig. 1 provides for the utility model embodiment;
Two of the structural representation of the QD-LED that Fig. 2 provides for the utility model embodiment;
Three of the structural representation of the QD-LED that Fig. 3 provides for the utility model embodiment;
The QD-LED preparation method's that Fig. 4 provides for the utility model embodiment flow chart.
Embodiment
Below in conjunction with accompanying drawing, the tft array substrate that the utility model embodiment is provided and the embodiment of light emitting diode with quantum dots display device are described in detail.
Each layer film thickness and area size do not reflect true ratio in the accompanying drawing, and purpose is signal explanation the utility model content just.
In a kind of tft array substrate that the utility model embodiment provides, the source-drain electrode in the TFT of tft array substrate structure directly is arranged on the oxide semiconductor layer, has saved the etching barrier layer that between arranges.
Particularly, the material of source-drain electrode is generally the metals such as copper Cu or molybdenum Mo.
Particularly, the above-mentioned TFT structure that the utility model embodiment provides can be applied to the top gate type tft array substrate, also can be applicable to the bottom gate type tft array substrate, is not doing restriction.
The preparation method of the above-mentioned tft array substrate that the utility model embodiment provides is specially: form successively oxide semiconductor layer and source-drain electrode, wherein, source-drain electrode is generally made by metallic copper Cu or molybdenum Mo; Adopt intermediate tone mask plate and the first hydrogen peroxide etching liquid, form respectively the figure of oxide semiconductor layer and the figure that forms source-drain electrode at the source-drain electrode layer at oxide semiconductor layer by composition technique.
Particularly, this first hydrogen peroxide etching liquid specifically comprises: stabilizer and the surfactant of hydrogen peroxide, the sub-complexing agent of source-drain electrode leafing, hydrogen peroxide, and the pH value of this first hydrogen peroxide etching liquid is between 6-8.
Wherein, the content of hydrogen peroxide is between the 5%-20%, and the content of surfactant is between 1%-10%, and the content of the sub-complexing agent of source-drain electrode leafing is specifically decided according to the amount of the required source-drain electrode material that etches away.Can the etching oxide semi-conducting material when using above-mentioned etching liquid etching source-drain electrode layer; therefore; between source-drain electrode and oxide semiconductor, just do not need to prepare the etching barrier layer that one deck protection oxide semiconductor is not etched; save mask plate and preparation technology with respect to existing film layer structure, thereby can save cost.
Particularly, the utility model embodiment also provides a kind of light emitting diode with quantum dots display device that utilizes above-mentioned TFT structure, as depicted in figs. 1 and 2, comprising:
Lower underlay substrate 1;
Be positioned at the oxide semiconductor layer 3 on the lower underlay substrate 1;
Directly be arranged at the source-drain electrode 4 and 5 on the oxide semiconductor layer 3, source-drain electrode 4 is relative with 5 and put the formation channel structure;
Be positioned at the insulating barrier 6 on source-drain electrode 4 and 5, the position that insulating barrier is corresponding with the open area of each pixel cell has one or more microcellular structures; Wherein, Fig. 1 shows the QD-LED device of a microcellular structure, and Fig. 2 shows the QD-LED device of a plurality of microcellular structures;
Be arranged in the quantum dot light emitting layer 7 of the microcellular structure of insulating barrier 6;
Be positioned at the transparency electrode 8 on the insulating barrier 6;
Directly be arranged on the transparency electrode 8 and be positioned at the grid 9 of channel structure top; And,
Be positioned at the upper underlay substrate 11 on the grid 9.
The above-mentioned QD-LED device that the utility model embodiment provides, its operation principle is as follows: when grid 9 energising, the transparency electrode 8 that links to each other with grid 9 is to quantum dot light emitting layer 7 injected hole charge carriers, can form a current channel in the oxide semiconductor 3 below grid 9 simultaneously, electronic carrier is from draining 5 by current channel process source electrode 4 injection quantum dot light emitting layers 7, and hole and electronic carrier are in quantum dot light emitting layer 7 composite guide photoluminescences.
The above-mentioned QD-LED device that the utility model embodiment provides, in the specific implementation, can use intermediate tone mask plate or gray tone mask plate, utilize composition technique to form respectively the figure of source electrode and drain electrode at the source-drain electrode layer, form the figure of active layer at oxide semiconductor layer, particularly, in this composition technique, the composition of the employed etching liquid of source-drain electrode layer comprised: the stabilizer of hydrogen peroxide, source-drain electrode ionic complexing agent, hydrogen peroxide, and surfactant, and the pH value of this etching liquid is between 6-8; Wherein the content of hydrogen peroxide is between the 5%-20%, and the content of surfactant is between 1%-10%, and the content of source-drain electrode ionic complexing agent is specifically decided according to the amount of the required source-drain electrode that etches away.Can the etching oxide semi-conducting material when using above-mentioned etching liquid etching source-drain electrode; therefore; between source-drain electrode and oxide semiconductor, just do not need to prepare the protective layer that one deck protection oxide semiconductor is not etched; save mask plate and preparation technology with respect to existing film layer structure, thereby can save cost.
In like manner, the material of preparation transparency electrode can be ITO or IZO, and the material of preparation grid can be metal M o, like this, just can use intermediate tone mask plate or gray tone mask plate, utilize composition technique to form respectively the figure of grid at grid layer, form the figure of electrode at ITO or IZO layer.Particularly, the composition to the employed etching liquid of grid layer in this composition technique comprises: the stabilizer of hydrogen peroxide, grid ionic complexing agent, hydrogen peroxide, and surfactant, and the pH value of this etching liquid is between 6-8; Wherein the content of hydrogen peroxide is between the 5%-20%, and the content of surfactant is between 1%-10%, and the content of grid ionic complexing agent is specifically decided according to the amount of the required grid that etches away.Can the etching transparent electrode material when using above-mentioned etching liquid etching grid; therefore; between the grid utmost point and transparency electrode, just do not need to prepare the protective layer that one deck protection transparency electrode is not etched, saved mask plate and preparation technology with respect to existing film layer structure, thereby can save cost.
Further, in order to guarantee on the transparency electrode with enough electric weight, as shown in Figure 3, also on transparency electrode 8 and with grid 9, with layer anode 13 to be set, this anode 13 is separately to transparency electrode 8 power supplies, this moment, grid 9 and anode 13 non-interference in order to guarantee to be connected with transparency electrode 8 simultaneously can redesign the figure of transparency electrode 8, zone and other regional mutually insulated settings that transparency electrode 8 is covered by grid 9.
Further, because source electrode 4 is arranged on the below of quantum dot light emitting layer 7, and general source electrode 4 is to be made by the good metal material of conductivity, copper Cu for example, this source electrode 4 also can play the effect in reflector, the rear top-emission from device of light reflection that quantum dot light emitting layer 7 is sent goes out, and has strengthened the luminosity of whole QD-LED device.
In the specific implementation, because the transmission rate of holoe carrier and electronic carrier is generally different, in order to guarantee that as far as possible hole and electronics can inject quantum dot light emitting layer simultaneously, when design QD-LED device, as depicted in figs. 1 and 2, the general hole transmission layer 12 of one deck between quantum dot light emitting layer 7 and transparency electrode 8 of also can making, this hole transmission layer 12 can be accelerated the transmission rate of holoe carrier, it is mated with the transmission rate of electronic carrier as far as possible, have higher luminous efficiency to guarantee quantum dot light emitting layer.
Further, in above-mentioned QD-LED device, cause the characteristic variation for fear of oxide semiconductor layer 3 direct contacts with underlay substrate 1, as shown in Figure 1 to Figure 3, can also between lower underlay substrate 1 and oxide semiconductor layer 3, resilient coating 2 be set.
Further, in above-mentioned QD-LED device, as shown in Figure 1 to Figure 3, between upper underlay substrate 11 and grid 9, protective layer 10 can also be set, not be subjected to ectocine with protection grid 9.
Particularly; when quanta point material bill coloured light that each pixel cell is filled, namely choose the consistent quanta point material of particle diameter, protective layer can be selected the preparation of transparent insulation resin material; be that protective layer is protective clear layer, the full color that can reach like this QD-LED device shows.Perhaps; when the quanta point material of each pixel cell filling turns white coloured light; namely choose the quanta point material of various mechanical fractions; protective layer can select the colorful insulation resin that only allows monochromatic light to pass through standby; be that protective layer is the chromatic filter layer that only allows monochromatic light to pass through, the full color that can reach like this QD-LED device shows.
Particularly, the insulating barrier in the above-mentioned QD-LED device is specially SiO
2Layer and cover described SiO
2SiNx layer on the layer, wherein, SiO
2The setting of layer is the impact that is not subjected to the SiNx layer for oxide semiconductor layer, source electrode and drain electrode.
Based on same utility model design, the utility model embodiment also provides the above-mentioned method of utilizing tft array substrate to prepare the QD-LED device, as shown in Figure 4, specifically may further comprise the steps:
S401, form oxide semiconductor layer and source-drain electrode successively; Adopt intermediate tone mask plate and the first hydrogen peroxide etching liquid, form respectively the figure of oxide semiconductor layer and the figure that forms source-drain electrode at source-drain electrode at oxide semiconductor layer by composition technique;
Particularly, the first hydrogen peroxide etching liquid specifically comprises: stabilizer and the surfactant of hydrogen peroxide, the agent of source-drain electrode complexing of metal ion, hydrogen peroxide, and the pH value of this first hydrogen peroxide etching liquid is between 6-8.
Further, before execution in step S401, can also comprise: on lower underlay substrate, form resilient coating.
S402, form insulating barrier at the source-drain electrode layer, and form one or more microcellular structures by composition technique in the insulating barrier position corresponding with the open area of each pixel cell;
S403, in microcellular structure, fill quanta point material, form quantum dot light emitting layer;
Particularly, after execution in step S403, can also comprise: on quantum dot light emitting layer, form hole transmission layer.
S404, on insulating barrier, form successively transparent electrode layer and grid layer, and employing intermediate tone mask plate and the second hydrogen peroxide etching liquid, form respectively the figure of grid and the figure that forms transparency electrode at transparent electrode layer at grid layer by composition technique;
Particularly, the second hydrogen peroxide etching liquid specifically comprises: stabilizer and the surfactant of hydrogen peroxide, gate metal ionic complexing agent, hydrogen peroxide, and the pH value of this second hydrogen peroxide etching liquid is between 6-8.
Further, when grid layer forms the figure of grid, can also form simultaneously the figure of anode at grid layer;
Accordingly, form in the figure of transparency electrode at transparent electrode layer, need zone and other regional mutually insulateds that will be covered by grid.
S405, on grid layer arranges underlay substrate.
Further, before execution in step S405, can also comprise: on grid, form protective layer.
A kind of tft array substrate that the utility model embodiment provides and light emitting diode with quantum dots display device, adopt intermediate tone mask plate and hydrogen peroxide etching liquid, can form respectively by a composition technique figure of oxide semiconductor layer at oxide semiconductor layer, and the figure that forms source-drain electrode at the source-drain electrode layer, like this, just can in the TFT structure, source-drain electrode be set directly on the oxide semiconductor layer, not be used in etching barrier layer is set between the two; And with the top gate type structure applications of this TFT structure in the structure of QD-LED display device, can the simple tft array substrate of implementation structure and QD-LED device, save its fabrication processing, reduced production cost.
Obviously, those skilled in the art can carry out various changes and modification to the utility model and not break away from spirit and scope of the present utility model.Like this, if of the present utility model these are revised and modification belongs within the scope of the utility model claim and equivalent technologies thereof, then the utility model also is intended to comprise these changes and modification interior.
Claims (8)
1. a thin-film transistor tft array substrate is characterized in that, the source-drain electrode in the TFT of described tft array substrate structure directly is arranged on the oxide semiconductor layer.
2. tft array substrate as claimed in claim 1 is characterized in that, the material of described source-drain electrode is copper Cu or molybdenum Mo.
3. a light emitting diode with quantum dots display device is characterized in that, comprising:
Lower underlay substrate;
Be positioned at the oxide semiconductor layer on the described lower underlay substrate;
Directly be arranged at the source-drain electrode on the described oxide semiconductor layer, described source-drain electrode is put the formation channel structure relatively;
Be positioned at the insulating barrier on the described source-drain electrode, the position that described insulating barrier is corresponding with the open area of each pixel cell has one or more microcellular structures;
Be arranged in the quantum dot light emitting layer of the microcellular structure of described insulating barrier;
Be positioned at the transparency electrode on the described insulating barrier;
Directly be arranged on the described transparency electrode and be positioned at the grid of described channel structure top; And,
Be positioned at the upper underlay substrate on the described grid.
4. display device as claimed in claim 3 is characterized in that, also comprises:
Hole transmission layer between described quantum dot light emitting layer and described transparency electrode.
5. display device as claimed in claim 3 is characterized in that, also comprises:
An anode that is positioned on the described transparency electrode and arranges with layer with described grid, zone and other regional mutually insulateds that described transparency electrode is covered by described grid.
6. display device as claimed in claim 3 is characterized in that, also comprises:
Resilient coating between described lower underlay substrate and described oxide semiconductor layer.
7. such as each described display device of claim 3-6, it is characterized in that, also comprise:
Protective layer on described between underlay substrate and the described grid.
8. display device as claimed in claim 7 is characterized in that, when quanta point material bill coloured light that each pixel cell is filled, described protective layer is protective clear layer;
When the quanta point material of each pixel cell filling turns white coloured light, the chromatic filter layer of described protective layer for only allowing monochromatic light to pass through.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201220574835 CN202855736U (en) | 2012-11-02 | 2012-11-02 | TFT array substrate, and quantum dot light-emitting diode display device |
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| CN 201220574835 CN202855736U (en) | 2012-11-02 | 2012-11-02 | TFT array substrate, and quantum dot light-emitting diode display device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956676A (en) * | 2012-11-02 | 2013-03-06 | 京东方科技集团股份有限公司 | Thin film transistor (TFT) array substrate, preparation method and quantum dot (QD) light emitting diode (LED) display device |
| CN105355799A (en) * | 2015-10-12 | 2016-02-24 | Tcl集团股份有限公司 | Quantum dot light-emitting field effect transistor and preparation method thereof |
| WO2016101442A1 (en) * | 2014-12-24 | 2016-06-30 | 京东方科技集团股份有限公司 | Pixel structure, manufacturing method thereof, pixel display method and array substrate |
| CN117410401A (en) * | 2023-12-15 | 2024-01-16 | 江西兆驰半导体有限公司 | LED chip and preparation method thereof |
-
2012
- 2012-11-02 CN CN 201220574835 patent/CN202855736U/en not_active Withdrawn - After Issue
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956676A (en) * | 2012-11-02 | 2013-03-06 | 京东方科技集团股份有限公司 | Thin film transistor (TFT) array substrate, preparation method and quantum dot (QD) light emitting diode (LED) display device |
| CN102956676B (en) * | 2012-11-02 | 2015-11-25 | 京东方科技集团股份有限公司 | Tft array substrate, preparation method and light emitting diode with quantum dots display device |
| WO2016101442A1 (en) * | 2014-12-24 | 2016-06-30 | 京东方科技集团股份有限公司 | Pixel structure, manufacturing method thereof, pixel display method and array substrate |
| US20160358539A1 (en) | 2014-12-24 | 2016-12-08 | Boe Technology Group Co., Ltd. | A pixel structure and a preparation method thereof, a pixel display method and an array substrate |
| US10049612B2 (en) | 2014-12-24 | 2018-08-14 | Boe Technology Group Co., Ltd. | Pixel structure and a preparation method thereof, a pixel display method and an array substrate |
| CN105355799A (en) * | 2015-10-12 | 2016-02-24 | Tcl集团股份有限公司 | Quantum dot light-emitting field effect transistor and preparation method thereof |
| CN117410401A (en) * | 2023-12-15 | 2024-01-16 | 江西兆驰半导体有限公司 | LED chip and preparation method thereof |
| CN117410401B (en) * | 2023-12-15 | 2024-02-23 | 江西兆驰半导体有限公司 | LED chip and preparation method thereof |
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Granted publication date: 20130403 Effective date of abandoning: 20151125 |
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