CN203179892U - Quantum dot light emitting diode display and display apparatus thereof - Google Patents
Quantum dot light emitting diode display and display apparatus thereof Download PDFInfo
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- CN203179892U CN203179892U CN 201320173756 CN201320173756U CN203179892U CN 203179892 U CN203179892 U CN 203179892U CN 201320173756 CN201320173756 CN 201320173756 CN 201320173756 U CN201320173756 U CN 201320173756U CN 203179892 U CN203179892 U CN 203179892U
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Abstract
The utility model discloses a quantum dot light emitting diode display and a display apparatus thereof. Each sub-pixel unit of each pixel unit is provided with an electroluminescent structure, a monochromatic quantum dot layer is arranged at the light emission side of the electroluminescent structure of at least one sub-pixel unit with a color of each pixel unit, and each monochromatic quantum dot layer emits the monochromatic light corresponding the color of the corresponding sub-pixel unit after excited by the light emitted by the corresponding electroluminescent structure. Quantum dots are employed to take the place of the prior inorganic doped system to play as a light color conversion material, quantum dots emits monochromatic light after excited by light emitted by electroluminescent structures, the emission spectrum of quantum dots is narrow, and luminous efficiency is high, thereby the color purity of each sub-pixel unit of the pixel unit is enhanced, and the display quality is raised. In addition, light emitted by the electroluminescent structures are scattered by the quantum dots, and compared to the light transmittance in light color conversion of the inorganic doped system, the luminous efficiency of the display is raised.
Description
Technical field
The utility model relates to technical field of flat panel display, relates in particular to a kind of quantum dot light emitting diodde desplay device and display unit.
Background technology
Organic Light Emitting Diode (OLED) display more and more is applied in the flat panel display in recent years owing to possess advantages such as frivolous, wide visual angle, response speed are fast, high-contrast.The OLED that adopts blue light-emitting is one of technology that realizes full-colorization of OLED in conjunction with photochromic conversion (Color Conversion) material, and be mainly can be by blue-light excited inorganic doping system material for the photochromic transition material that uses at present: 1. mix the Ce yttrium-aluminium-garnet; 2. mix the Eu alkaline-earth-metal silicate; 3. rare earth ion doped silica-based nitride or nitrogen oxide.Yet these photochromic transition materials exist colorimetric purity and efficient problem on the low side usually.
(Quantum Dots QDs), can claim nanocrystallinely again quantum dot, is a kind of nano particle of being made up of II-VI family or III-V family element.The particle diameter of quantum dot is generally between 1～20nm, because electronics and hole be by quantum confinement, continuous band structure becomes the discrete energy levels structure with molecular characterization, can emitting fluorescence after being excited.
The emission spectrum of quantum dot can be controlled by the size that changes quantum dot.Can make its emission spectrum cover whole visible region by the size of change quantum dot and its chemical composition.Be example with the CdTe quantum dot, when its particle diameter grew into 4.0nm from 2.5nm, their emission wavelength can be from the 510nm red shift to 660nm.
The fluorescence intensity of quantum dot and stability are all fine, at present, utilize the characteristics of luminescence of quantum dot, quantum dot can be applied to fluorescence labeling as molecular probe, also can be applied in the display device, as the light emitting source of the module backlight of LCDs, form white light at the light that is subjected to sending after blue LED lamp excites and blue light colour mixture, it has bigger colour gamut, can improve picture quality.And also quantum dot is not applied to design in the light emitting diodde desplay device in the prior art.
The utility model content
The utility model embodiment provides a kind of quantum dot light emitting diodde desplay device and display unit, in order to colorimetric purity and the luminous efficiency that improves display device.
A kind of quantum dot light emitting diodde desplay device that the utility model embodiment provides is provided with a plurality of pixel cells in the described display device, each described pixel cell all has the sub-pix unit of a plurality of demonstration different colours, and described display device comprises:
Underlay substrate;
Be arranged on the described underlay substrate and be positioned at the EL structure of the sub-pix unit of each pixel cell;
Be arranged at each pixel cell at least one color the sub-pix unit and be positioned at the monochromatic quantum dot layer of the bright dipping side of described EL structure, the monochromatic light of described monochromatic quantum dot layer corresponding described sub-pix cell colors of emission after being subjected to the optical excitation that described EL structure sends.
A kind of display unit that the utility model embodiment provides comprises the quantum dot light emitting diodde desplay device that the utility model embodiment provides.
The beneficial effect of the utility model embodiment comprises:
A kind of quantum dot light emitting diodde desplay device and display unit that the utility model embodiment provides, sub-pix unit at each pixel cell arranges EL structure, in the sub-pix unit of at least one color of each pixel cell and the bright dipping side that is positioned at EL structure monochromatic quantum dot layer is set, the monochromatic light of monochromatic quantum dot layer corresponding sub-pix cell colors of emission after being subjected to the optical excitation that EL structure sends.The utility model embodiment adopts quantum dot to replace existing inorganic doping system as photochromic transition material, quantum dot can send monochromatic light after the optical excitation of being sent by EL structure, because quantum dot emission spectrum is narrow and luminous efficiency is high, can improve the colorimetric purity of each sub-pix unit of forming pixel cell, thereby improve the display quality of display device.And, because the light that each particle in the monochromatic quantum dot layer can the scattering EL structure sends can improve the light transmittance of photochromic conversion with respect to the inorganic doping system material, thereby improve the luminous efficiency of display device.
Description of drawings
Fig. 1 a-Fig. 1 c is respectively the structural representation of the quantum dot light emitting diodde desplay device that the utility model embodiment provides;
The structural representation of the drive circuit in the display device that Fig. 2 provides for the utility model embodiment;
Fig. 3 a is the refraction schematic diagram of light in existing display device;
Fig. 3 b is the refraction schematic diagram of light in the display device that the utility model embodiment provides;
The structural representation of the quantum dot light emitting diodde desplay device with chromatic filter layer that Fig. 4 provides for the utility model embodiment.
Embodiment
Below in conjunction with accompanying drawing, the quantum dot light emitting diodde desplay device that the utility model embodiment is provided and the embodiment of display unit are described in detail.
Wherein, the true ratio that each layer film thickness and region shape do not reflect in the accompanying drawing, purpose are illustrative the utility model content.
A kind of quantum dot light emitting diodde desplay device that the utility model embodiment provides, shown in Fig. 1 a and Fig. 1 b, in display device, be provided with a plurality of pixel cells, each pixel cell all has the sub-pix unit (among the figure shown in the frame of broken lines) of a plurality of demonstration different colours, and this display device comprises:
Be arranged on the underlay substrate 01 and be positioned at the EL structure 02 of the sub-pix unit of each pixel cell;
Be arranged at each pixel cell at least one color the sub-pix unit and be positioned at the monochromatic quantum dot layer 03 of the bright dipping side of EL structure 02, the monochromatic light of monochromatic quantum dot layer 03 corresponding sub-pix cell colors of emission after being subjected to the optical excitation that EL structure 02 sends.
In the quantum dot light emitting diodde desplay device that the utility model embodiment provides, adopt quantum dot to replace existing inorganic doping system as photochromic transition material, quantum dot can send the monochromatic light of corresponding sub-pix cell colors after the optical excitation of being sent by EL structure, because quantum dot emission spectrum is narrow and luminous efficiency is high, can improve the colorimetric purity of the sub-pix unit of forming pixel cell, thereby improve the display quality of display device.And, because the light that each particle in the monochromatic quantum dot layer can the scattering EL structure sends can improve the light transmittance of photochromic conversion with respect to the inorganic doping system material, thereby improve the luminous efficiency of display device.Further, the quantum dot light emitting diodde desplay device that the utility model embodiment provides is all solid state display device, can shock resistance and anti-low temperature with respect to liquid crystal display device.
Need to prove, the described monochromatic quantum dot layer of the utility model embodiment is for being positioned at layer, the different quantum dots of corresponding different sub-pixs unit, described different quantum dot can be quanta point material difference or quantum dot size difference, as long as guarantee regional quantum dot in the sub-pix unit of the correspondence generation monochromatic light that is stimulated, its color and identical the getting final product of sub-pix unit color to display, be described quantum dot layer for the quantum dot in the sub-pix unit area of color of the same race identical, regional quantum dot difference in the sub-pix unit of different colours, but it all is only can send monochromatic light that each regional quantum dot is stimulated, therefore, will be called monochromatic quantum dot layer by this layer that quantum dot forms.
Particularly, EL structure in the above-mentioned quantum dot light emitting diodde desplay device that the utility model embodiment provides, it can be active driving, the EL structure that namely is positioned at each sub-pix unit realizes drive by independent electronic component control, as by TFT(thin film transistor, thin-film transistor) as switching device, also can be passive drive, do not do restriction at this.And each the TFT device in the drive circuit of active driving in the specific implementation, can be a-Si TFT, oxide TFT, LTPS-TFT(low temperature polycrystalline silicon) or the HTPS-TFT(high temperature polysilicon).
All be to be that example describes with active driving in the following quantum dot light emitting diodde desplay device that the utility model embodiment provides.
Particularly, EL structure 02 in the above-mentioned quantum dot light emitting diodde desplay device that the utility model embodiment provides, shown in Fig. 1 a and Fig. 1 b, specifically can comprise: be successively set on first electrode 021 on the underlay substrate 01, luminescent layer 022 and second electrode 023.
In the specific implementation, drive circuit 04 operated by rotary motion that is connected with each first electrode 021 is between first electrode 021 and underlay substrate 01, drive circuit 04 specifically can comprise following rete as shown in Figure 2: grid 011, gate insulator 012, active layer 013, ohmic contact layer 014, source-drain electrode 015 and insulating barrier 016 that elder generation adopts technologies such as exposure, development, etching to form at underlay substrate successively by technology film forming such as deposition, sputters again.Certainly, the concrete structure of drive circuit 04 also can comprise other retes or not comprise ohmic contact layer etc., for the distortion of these structures, not do restriction at this.
In the specific implementation, EL structure 02 comprises at least: be successively set on first electrode 021 on the underlay substrate 01, luminescent layer 022 and second electrode 023.Wherein first electrode 021 is generally anode, can be ito thin film (Indium Tin Oxides, tin indium oxide), be generally transparency electrode, second electrode is generally negative electrode, can be metal level, according to the difference of EL structure 02 light direction, metal level can be for translucent or opaque, certainly, in the distortion of some other structure, first electrode can be negative electrode, and second electrode can be anode, and namely negative electrode is positioned at the top of drive circuit on the underlay substrate, anode is positioned at the top of negative electrode, and these the utility model are not all done restriction.Except above-mentioned three layers, EL structure 02 can also comprise other layer, as electron injecting layer, electron transfer layer, hole injection layer, hole transmission layer and hole blocking layer etc., and the distortion of these structures, the utility model is not done restriction yet.
In the specific implementation, as shown in Figure 1a, EL structure 02 can be top emission type, and namely a side at second electrode, 023 place is the bright dipping side of EL structure 02, and monochromatic quantum dot layer 03 is positioned on second electrode 023.In the EL structure of top emission type, owing to need light that luminescent layer 022 sends from second electrode 023 place, the one side outgoing, therefore, second electrode 023 be generally can printing opacity transparent conductive material, ITO for example, first electrode 021 is generally can catoptrical opaque metal.And when adopting top emission type, underlay substrate 01 can be made by opaque metal, also can be made by glass or flexible material.Drive circuit 04 is regulated the voltage that is input to each first electrode 021, thereby regulate luminescent layer 022 from the luminous intensity of second electrode, 023 outgoing, to control the luminous efficiency of each monochromatic quantum dot layer 03, by the variation realization full color demonstration of the monochromatic quantum dot layer 03 luminous power of difference.
And, in the specific implementation, the electric current electroexcitation quantum dot light emitting that loads on second electrode 023 produces the photoexcitation quantum dot light emitting and to disturb, and can between second electrode 023 and monochromatic quantum dot layer 03 the insulating barrier (not shown) be set.
In the specific implementation, shown in Fig. 1 b, EL structure 02 can also be the bottom-emission type, namely a side at first electrode, 021 place is the bright dipping side of EL structure 02, monochromatic quantum dot layer 03 is between first electrode 021 and underlay substrate 01, and generally all between drive circuit 04 and underlay substrate 01.In the EL structure of bottom-emission type, owing to need light that luminescent layer 022 sends from first electrode 021 place, the one side outgoing, therefore, first electrode 021 be generally can printing opacity transparent conductive material, ITO for example, second electrode 023 is generally can catoptrical opaque metal.Drive circuit 04 is regulated the voltage that is input to each first electrode 021, thereby regulate luminescent layer 022 from the luminous intensity of first electrode, 021 outgoing, to control the luminous efficiency of each monochromatic quantum dot layer, by the variation realization full color demonstration of the luminous power of the monochromatic quantum dot layer of difference.
The display device of top emission type is with respect to the bottom-emission type, because drive circuit 04 operated by rotary motion is between first electrode, 021 underlay substrate 01, the bright dipping side of top emission type does not have stopping of light shield layer (namely blocking the light blocking layer of drive circuit 04 part), with respect to the bottom-emission type, pixel aperture ratio is higher, be conducive to increase the light transmittance of display device, and can reduce the power consumption of display device.
Further, shown in Fig. 1 a and Fig. 1 b, can separate by black matrix 05 between the monochromatic quantum dot layer 03 at each sub-pix transmission region, avoid bad colour contamination, the material of black matrix 05 is generally polymer or the resin that contains carbon black.
In the specific implementation, the luminescent layer 022 in EL structure can be the material of emission blue light, for example can electroexcitation sends the GaN inorganic material of blue light, also can be organic material.When selecting for use the EL structure that can send blue light to excite each monochromatic quantum dot layer 03, preferably, shown in Fig. 1 a and Fig. 1 b, can also directly utilize blue light as one of primary colors of forming pixel cell, even each pixel cell all has the sub-pix unit that shows N color, wherein the sub-pix unit of N-1 color is respectively arranged with monochromatic quantum dot layer, 1 sub-pix unit does not arrange monochromatic quantum dot layer, directly as the primary colors of this sub-pix unit, N is the positive integer more than or equal to 2 to the blue light that EL structure is sent.When N equaled 2, the Show Color of forming two sub-pix unit of a pixel cell can be respectively orange and blue.For example: form a pixel cell by blue, red and green 3 kinds of primary colors, one of them place, sub-pix unit does not arrange monochromatic quantum dot layer, be via structure, the blue light that EL structure is sent is without the direct outgoing of monochromatic quantum dot layer, and place, other 2 sub-pix unit is provided with the monochromatic quantum dot layer that glows and the monochromatic quantum dot layer of green light respectively.
In the specific implementation, also can select for use the material that can send ultraviolet light as the material of luminescent layer in the EL structure, this material can be inorganic material, also can be organic material, does not do restriction at this.When selecting for use the EL structure that can send ultraviolet light to excite each monochromatic quantum dot layer 03, shown in Fig. 1 c, a plurality of sub-pixs unit of each pixel cell need be provided with monochromatic quantum dot layer 03.
In the specific implementation, can form a pixel cell by 3 looks or the primary colors more than 3 looks, not do restriction at this.When the primary colors more than adopting 3 looks is formed a pixel cell, with respect to formed a pixel cell by traditional red green blue tricolor, can improve the colour gamut of display device, strengthen color saturation, improve the display quality of display device.
And each monochromatic quantum dot layer of forming a pixel cell shows to realize full color being subjected to can sending monochromatic light such as ruddiness, green glow, gold-tinted, orange light or blue or green light after the optical excitation that EL structure sends.Particularly, the material of monochromatic quantum dot layer can be selected CdS, CdSe, CdTe, ZnO, ZnSe, ZnTe and the GaAs of III-V family, GaP, GaAs, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, the materials such as AlP, AlSb of II-VI family for use.Particle diameter by the control quantum dot is controlled the luminous wave band of quantum dot, for example is example with ZnS, and the quantum dot size of red-emitting is mainly at 9～10nm, emission gold-tinted quantum dot size 8nm, and the quantum dot size of transmitting green light is at 7nm.
And, because the particle diameter of quantum dot is in nanometer scale, with light wave at the same order of magnitude, adopt quanta point material as photochromic transition material, the light that the quantum dot particle can the scattering luminescent layer sends, can improve the light transmittance of photochromic conversion with respect to the inorganic doping system material, improve the luminous efficiency of display device.
Particularly, shown in Fig. 3 a and Fig. 3 b, be example with the top emission type, establish luminescent layer 022, second electrode 023, conventional inorganic doping system material layer 06 and the refractive index of monochromatic quantum dot layer 03 as photochromic conversion is identical, be n1, this refractive index n 1 common refractive index n 0 greater than air.When light is propagated to optically thinner medium by optically denser medium, when incidence angle reaches a certain critical angle, will not have refracted ray and send, total reflection phenomenon takes place this moment.If refractive index is the luminescent layer 022 of n1, second electrode 023, the critical angle of inorganic doping system material layer 06 and monochromatic quantum dot layer 03 is i2, incidence angle is three light 1 of i1＜i2＜i3,2 and 3, shown in Fig. 3 a, in by the display device of inorganic doping material layer 06 as photochromic transition material, because the particle of inorganic doping system material is bigger, do not have scattering process, have only light 1 transmissive to go out display device, total reflection phenomenon takes place in light 2 and 3, can not transmit display device, make that employing inorganic doping material layer 06 is on the low side as the display device light transmission rate of photochromic conversion.Incidence angle is three light 1,2 and 3 of i1＜i2＜i3, shown in Fig. 3 b, in by the display device of monochromatic quantum dot layer 03 as photochromic conversion, because quanta point material has scattering process, light 1,2 and 3 can both transmit display device, has improved the light transmission rate of display device.
Further, in order to increase the luminous colorimetric purity of each pixel cell in the display device, in display device, as shown in Figure 4, can also comprise: the bright dipping side that is arranged at each sub-pix unit, and the chromatic filter layer 07 of corresponding each sub-pix cell colors, chromatic filter layer 07 can filter the veiling glare of color except the monochromatic light of sub-pix unit Show Color, improves the colorimetric purity of each sub-pix unit.
Based on same utility model design, the utility model embodiment also provides a kind of display unit, comprise the above-mentioned quantum dot light emitting diodde desplay device that the utility model embodiment provides, because the principle of this device solves problem is similar to aforementioned a kind of quantum dot light emitting diodde desplay device, therefore the enforcement of this device can repeat part and repeat no more referring to its enforcement.
A kind of quantum dot light emitting diodde desplay device and display unit that the utility model embodiment provides, sub-pix unit at each pixel cell arranges EL structure, in the sub-pix unit of at least one color of each pixel cell and the bright dipping side that is positioned at EL structure monochromatic quantum dot layer is set, the monochromatic light of monochromatic quantum dot layer corresponding sub-pix cell colors of emission after being subjected to the optical excitation that EL structure sends.The utility model embodiment adopts quantum dot to replace existing inorganic doping system as photochromic transition material, quantum dot can send monochromatic light after the optical excitation of being sent by EL structure, because quantum dot emission spectrum is narrow and luminous efficiency is high, can improve the colorimetric purity of each sub-pix unit of forming pixel cell, thereby improve the display quality of display device.And, because the light that each particle in the monochromatic quantum dot layer can the scattering EL structure sends can improve the light transmittance of photochromic conversion with respect to the inorganic doping system material, thereby improve the luminous efficiency of display device.
Obviously, those skilled in the art can carry out various changes and modification to the utility model and not break away from spirit and scope of the present utility model.Like this, if of the present utility model these are revised and modification belongs within the scope of the utility model claim and equivalent technologies thereof, then the utility model also is intended to comprise these changes and modification interior.
Claims (10)
1. a quantum dot light emitting diodde desplay device is provided with a plurality of pixel cells in the described display device, and each described pixel cell all has the sub-pix unit of a plurality of demonstration different colours, it is characterized in that, described display device comprises:
Underlay substrate;
Be arranged on the described underlay substrate and be positioned at the EL structure of the sub-pix unit of each pixel cell;
Be arranged at each pixel cell at least one color the sub-pix unit and be positioned at the monochromatic quantum dot layer of the bright dipping side of described EL structure, the monochromatic light of described monochromatic quantum dot layer corresponding described sub-pix cell colors of emission after being subjected to the optical excitation that described EL structure sends.
2. display device as claimed in claim 1 is characterized in that, described EL structure comprises: be successively set on first electrode on the described underlay substrate, luminescent layer and second electrode.
3. display device as claimed in claim 2 is characterized in that, a side at the described second electrode place is the bright dipping side of described EL structure, and described monochromatic quantum dot layer is positioned on described second electrode.
4. display device as claimed in claim 2 is characterized in that, a side at the described first electrode place is the bright dipping side of described EL structure, and described monochromatic quantum dot layer is between described first electrode and described underlay substrate.
5. display device as claimed in claim 2 is characterized in that, the material of described luminescent layer is the material of emission blue light;
Each described pixel cell all has the sub-pix unit that shows N color, and wherein the sub-pix unit of N-1 color is respectively arranged with described monochromatic quantum dot layer, and N is the positive integer more than or equal to 2.
6. display device as claimed in claim 2 is characterized in that, the material of described luminescent layer is the material of emission ultraviolet light;
A plurality of sub-pixs unit of each described pixel cell is provided with described monochromatic quantum dot layer.
7. as each described display device of claim 1-6, it is characterized in that, also comprise: be arranged at the bright dipping side of each sub-pix unit, and chromatic filter layer, described chromatic filter layer and the described monochromatic quantum dot layer mutually insulated of corresponding each sub-pix cell colors.
8. as each described display device of claim 1-6, it is characterized in that each described monochromatic quantum dot layer is red-emitting, green glow, gold-tinted, orange light or blue or green light after being subjected to the optical excitation that described EL structure sends.
9. as each described display device of claim 1-6, it is characterized in that described EL structure is active driving.
10. a display unit is characterized in that, comprises as each described quantum dot light emitting diodde desplay device in the claim 1～9.
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| CN103227189B (en) * | 2013-04-09 | 2015-12-02 | 北京京东方光电科技有限公司 | A kind of light emitting diode with quantum dots display device and display unit |
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| CN104851903A (en) * | 2015-04-22 | 2015-08-19 | 京东方科技集团股份有限公司 | Flexible OLED display and manufacturing method thereof |
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| CN107665639A (en) * | 2017-03-27 | 2018-02-06 | 广东聚华印刷显示技术有限公司 | QLED light-emitting display devices |
| CN109950271A (en) * | 2017-12-20 | 2019-06-28 | 上海和辉光电有限公司 | A kind of display |
| CN109950271B (en) * | 2017-12-20 | 2022-03-25 | 上海和辉光电股份有限公司 | Display device |
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