CN104851903A - Flexible OLED display and manufacturing method thereof - Google Patents
Flexible OLED display and manufacturing method thereof Download PDFInfo
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- CN104851903A CN104851903A CN201510194223.0A CN201510194223A CN104851903A CN 104851903 A CN104851903 A CN 104851903A CN 201510194223 A CN201510194223 A CN 201510194223A CN 104851903 A CN104851903 A CN 104851903A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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Abstract
The embodiment of the present invention provides a flexible OLED display and a manufacturing method thereof, and relates to the display technology field. Light emitted from sub-pixels is prevented from interfering with adjacent sub-pixels, and thus the color purity is improved and a color case phenomenon is improved. The flexible OLED display includes a flexible substrate, top emission light emitting diodes arranged on the flexible substrate and positioned in sub-pixel areas, a pixel defining layer positioned between every two adjacent top emission light emitting diodes, and a packaging layer. The packaging layer at least includes a first pattern layer. The first pattern layer at least includes first patterns that correspond to the pixel defining layers. Except the positions corresponding to the first patterns, other positions of the packaging layer are all transparent. Provided are the flexible OLED display and preparation thereof.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of flexible OLED display and preparation method thereof.
Background technology
Flexible display technologies was having development at full speed in recent years, drove the quality of flexible display from the size of screen to display all to achieve very much progress thus.Be no matter the cathode ray tube (Cathode Ray Tube is called for short CRT) being on the verge of to disappear, still the liquid crystal display (Liquid Crystal Display is called for short LCD) of main flow now, inherently belongs to traditional rigid display.Compared with traditional rigid display, flexible display has plurality of advantages, such as shock-resistant, and shock resistance is strong, and lightweight, volume is little, carries convenient etc.
At present, flexible display mainly flexible OLED display.As shown in Figure 1, this flexible OLED display comprises flexible substrate substrate 10, is arranged on the anode 201 at each sub-pixel position place of described flexible substrate substrate 10, organic material functional layer 202, negative electrode 203 and the pixel between adjacent two sub-pixels and defines layer 30 and be positioned at the encapsulated layer 40 of described flexible OLED display the top.
Based on said structure, due under the state that flexible OLED display can frequently be in bending, therefore can cause the light sent from the organic material functional layer 202 of sub-pixel, at encapsulated layer 40, reflection and refraction can occur, thus cause light from adjacent subpixels outgoing, produce color purity decline and color offset phenomenon, and then affect display effect.
Summary of the invention
Embodiments of the invention provide a kind of flexible OLED display and preparation method thereof, can avoid the light interference adjacent subpixels from sub-pixel outgoing, thus can improve colorimetric purity and improve color offset phenomenon.
For achieving the above object, embodiments of the invention adopt following technical scheme:
On the one hand, a kind of flexible OLED display is provided, comprises flexible substrate substrate, be arranged on described flexible substrate substrate and define layer and encapsulated layer in the top emitting light-emitting diode of each subpixel area, pixel between adjacent described top emitting light-emitting diode; Described encapsulated layer at least comprises the first patterned layer, and described first patterned layer at least comprises and defines the first pattern corresponding to layer with described pixel; Wherein, at described encapsulated layer except with except described first pattern corresponding position, other positions are all transparent.
Optionally, described first patterned layer also comprises the second pattern of the transparent material between described first pattern.
Optionally, described encapsulated layer comprises at least three-decker that inorganic material layer and organic material layer are arranged alternately; Wherein, at least organic material layer described in one deck is described first patterned layer.
Further alternative, described encapsulated layer comprises the five-layer structure that inorganic material layer and organic material layer are arranged alternately; Wherein, near outside one deck described in organic material layer be described first patterned layer, another layer of described organic material layer is transparent organic material layer.
Based on above-mentioned, preferably, described first patterned layer is also corresponding with the marginal portion of the organic material functional layer of described top emitting light-emitting diode.
Preferably, described flexible OLED display also comprises thin-film transistor, and the drain electrode of described thin-film transistor is electrically connected with the first electrode of described top emitting light-emitting diode; Wherein, top emitting light-emitting diode comprises and is successively set on described first electrode above described thin-film transistor, described organic material functional layer and the second electrode; Described first electrode comprises opaque metal layer, and described second electrode comprises semi-transparent metal layer.
On the other hand, a kind of preparation method of flexible OLED display is provided, is included in flexible substrate substrate formed and defines layer and encapsulated layer in the top emitting light-emitting diode of each subpixel area, the pixel between adjacent described top emitting light-emitting diode; Form described encapsulated layer to comprise: formed and at least comprise the encapsulated layer of the first patterned layer, described first patterned layer at least comprises and defines the first pattern corresponding to layer with described pixel; Wherein, at described encapsulated layer except with except described first pattern corresponding position, other positions are all transparent.
Optionally, form described first patterned layer, comprising: form described first patterned layer be made up of the second pattern of described first pattern and the transparent material between described first pattern.
Further alternative, form the encapsulated layer at least comprising the first patterned layer and comprise: the described encapsulated layer forming at least three-decker that inorganic material layer and organic material layer replace successively; Wherein, at least organic material layer described in one deck is the first patterned layer be made up of the first pattern of opaque material and the second pattern of transparent material.
Further alternative, described encapsulated layer comprises the five-layer structure that inorganic material layer and organic material layer replace; Wherein, near outside one deck described in organic material layer be described first patterned layer, another layer of described organic material layer is transparent organic material layer.
Optionally, form the first patterned layer be made up of the first pattern of opaque material and the second pattern of transparent material to comprise: defining with described pixel described first pattern that layer corresponding position forms opaque organic material by evaporation coating method; Between described first pattern, described second pattern of transparent organic material is formed by evaporation coating method; Or, between described first pattern to be formed, described second pattern of transparent organic material is formed by evaporation coating method; Defining with described pixel described first pattern that layer corresponding position forms opaque organic material by inkjet printing methods.
Based on above-mentioned, preferably, described first pattern is also corresponding with the marginal portion of the organic material functional layer of described top emitting light-emitting diode.
Preferably, before the described top emitting light-emitting diode of formation, described method also comprises formation thin-film transistor, and the drain electrode of described thin-film transistor is electrically connected with the first electrode of described top emitting light-emitting diode; Wherein, top emitting light-emitting diode comprises and is formed in described first electrode above described thin-film transistor, described organic material functional layer and the second electrode successively; Described first electrode comprises opaque metal layer, and described second electrode comprises semi-transparent metal layer.
Embodiments of the invention provide a kind of flexible OLED display and preparation method thereof, and described flexible OLED display comprises flexible substrate substrate, be arranged on described flexible substrate substrate and define layer and encapsulated layer in the top emitting light-emitting diode of each subpixel area, pixel between adjacent described top emitting light-emitting diode; Described encapsulated layer at least comprises the first patterned layer be made up of the first pattern of opaque material and the second pattern of transparent material; Wherein, it is corresponding that described first pattern and described pixel define layer, and described second pattern is between described first pattern.The first pattern due to opaque material can absorb its light of directive, therefore, when its be arranged on to define layer corresponding position with described pixel time, the light that described top emitting light-emitting diode can be avoided to send is injected in adjacent subpixels and produces interference to adjacent subpixels after reflection and/or refraction, thus hinge structure can improve colorimetric purity and improve color offset phenomenon.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
The structural representation of a kind of flexible OLED display that Fig. 1 provides for prior art;
The structural representation one of a kind of flexible OLED display that Fig. 2 provides for the embodiment of the present invention;
The structural representation one of a kind of encapsulated layer that Fig. 3 provides for the embodiment of the present invention;
The structural representation two of a kind of encapsulated layer that Fig. 4 provides for the embodiment of the present invention;
The structural representation three of a kind of encapsulated layer that Fig. 5 provides for the embodiment of the present invention;
The structural representation two of a kind of flexible OLED display that Fig. 6 provides for the embodiment of the present invention;
A kind of flexible OLED display sub-pixel arrangement schematic diagram one that Fig. 7 a provides for the embodiment of the present invention;
A kind of flexible OLED display sub-pixel arrangement schematic diagram two that Fig. 7 b provides for the embodiment of the present invention.
Reference numeral:
10-flexible substrate substrate; 20-top emitting light-emitting diode; 201-anode; 202-organic material functional layer; 203 negative electrodes; 30-pixel defines layer; 40-encapsulated layer; 401-first patterned layer; 401a-first pattern; 401b-second pattern; 402-inorganic material layer; 403-organic material layer by layer; 50-thin-film transistor; 501-grid; 502-gate insulation layer; 503-semiconductor active layer; 504-source electrode; 505-drains.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiments provide a kind of flexible OLED display, as shown in figures 2-6, this flexible OLED display comprises flexible substrate substrate 10, is arranged on described flexible substrate substrate 10 and defines layer 30 and encapsulated layer 40 in the top emitting light-emitting diode 20 of each subpixel area, pixel between adjacent described top emitting light-emitting diode; Described encapsulated layer 40 at least comprises the first patterned layer 401, and described first patterned layer 401 at least comprises and defines the first pattern 401a corresponding to layer 30 with described pixel; Wherein, at described encapsulated layer 40 except with except described first pattern 401 corresponding position, other positions are all transparent.
Wherein, the material of described flexible substrate substrate 10 can be at least one in polyimides, Merlon, polyacrylate, Polyetherimide, polyether sulfone, PETG and PEN.
It should be noted that, the first, do not limit the structure of described top emitting light-emitting diode 20, it at least comprises anode 201, organic material functional layer 202, negative electrode 203.
On this basis, the material of described anode 201 and negative electrode 203 is not limited, as long as the luminous energy that guarantee top emitting light-emitting diode 20 sends is from described encapsulated layer 40 side outgoing.
The second, it will be understood by those skilled in the art that the effect of described encapsulated layer 40 is that the described top emitting light-emitting diode 20 of encapsulation is to stop that extraneous water vapor permeable enters in this OLED display.
On this basis, described encapsulated layer 40, except comprising described first patterned layer 401, also comprises the patterned layer of other transparent materials, does not specifically limit at this.
3rd, above-mentioned opaque material is not limited, as long as its energy extinction; In addition, above-mentioned transparent material is not limited, as long as ensure corresponding light transmitance.
4th, it is corresponding that described first pattern 401a and described pixel define layer 30, it is completely corresponding that can be the first pattern 401a with described pixel define layer 30, also can be the first pattern 401a except with described pixel define layer 30 completely corresponding except, also corresponding with part top emitting light-emitting diode 20, specifically do not limit at this.
Embodiments provide a kind of flexible OLED display, comprise flexible substrate substrate 10, be arranged on described flexible substrate substrate 10 and define layer 30 and encapsulated layer 40 in the top emitting light-emitting diode 20 of each subpixel area, pixel between adjacent described top emitting light-emitting diode 20; Described encapsulated layer 40 at least comprises the first patterned layer 401, and described first patterned layer 401 at least comprises and defines the first pattern 401a corresponding to layer 30 with described pixel; Wherein, at described encapsulated layer 40 except with except described first pattern 401 corresponding position, other positions are all transparent.The first pattern 401a due to opaque material can absorb its light of directive, therefore, when its be arranged on define layer 30 corresponding position with described pixel time, the light that described top emitting light-emitting diode 20 can be avoided to send is injected in adjacent subpixels and produces interference to adjacent subpixels after reflection and/or refraction, thus hinge structure can improve colorimetric purity and improve color offset phenomenon.
Optionally, as shown in figures 2-6, described first patterned layer 401 also comprises the second pattern 401b of the transparent material between described first pattern 401a.
The consistency of thickness of described first patterned layer 401 can be ensured like this, on this basis, homogeneous for ensureing the thickness of encapsulated layer, when follow-up formation rete just without the need to carrying out patterning process again.
Optionally, as in Figure 3-5, described encapsulated layer 40 comprises at least three-decker that inorganic material layer 402 and organic material layer 403 are arranged alternately; Wherein, at least organic material layer 403 described in one deck is described first patterned layer 401.
Here, inorganic material layer 402 and organic material layer alternately refer to: first arrange ground floor inorganic material layer 402, this ground floor inorganic material layer 402 arranges one deck organic material layer 403, then second layer inorganic material layer 402 is set on this organic material layer 403, by that analogy again.
It should be noted that, because encapsulated layer 40 is positioned at the luminous side of described top emitting diode 20, therefore if no special instructions, material in encapsulated layer 40 is all transparent material, such as, namely described inorganic material layer 402 is made up of transparent inorganic material, and when described organic material layer 403 is not used as the first patterned layer 401, it is made up of transparent organic material.
In addition, at least organic material layer 403 described in one deck is described first patterned layer 401, be: when at least comprising one deck organic material layer 403 in described encapsulated layer 40, the figure of this layer can be made and the identical figure of the first patterned layer 401, namely now the first pattern 401a of the first patterned layer 401 and the second pattern 401b is organic material, just the first pattern 401a adopts opaque organic material, and the second pattern 401b adopts transparent organic material.
Wherein, described opaque organic material can be such as Parylene, organic group carbon, organic group ceramic material etc.
Example, as shown in Figure 3, described encapsulated layer 40 comprises ground floor inorganic material layer 402, is arranged on the first patterned layer 401 of the organic material on this ground floor inorganic material layer 402, is arranged on the second layer inorganic material layer 402 in this first patterned layer 401.
Again or, as shown in Figure 4, described encapsulated layer 40 comprises ground floor inorganic material layer 402, be arranged on the first patterned layer 401 of the organic material on this ground floor inorganic material layer 402, be arranged on the second layer inorganic material layer 402 in this first patterned layer 401, be arranged on the first patterned layer 401 of the organic material on this second layer inorganic material layer 402, be arranged on the third layer inorganic material layer 402 in this first patterned layer 401.
Due to organic material layer 403 can do relatively thick, therefore, the material of described first patterned layer 401 is set to organic material, the oblique light of greater angle scope can be absorbed, thus light can be avoided further to be injected into after reflection and/or refraction in adjacent subpixels adjacent subpixels generation interference.
Further alternative, as shown in Figure 5, described encapsulated layer 40 comprises the five-layer structure that inorganic material layer 402 and organic material layer 403 are arranged alternately; Wherein, near outside one deck described in organic material layer 403 be described first patterned layer 401, another layer of described organic material layer 403 is transparent organic material layer.
That is: ground floor inorganic material layer 402 is first set, this ground floor inorganic material layer 402 arranges layer of transparent organic material layer 403, this organic material layer by layer 403 arrange second layer inorganic material layer 402 again, this second layer inorganic material layer 402 arranges the first patterned layer 401 of organic material again, then third layer inorganic material layer 402 is set in this first patterned layer 401.
On the one hand, these light can be avoided to reflect and/or be refracted in adjacent subpixels producing interference to adjacent subpixels, on the other hand, five-layer structure is set the encapsulation performance of this OLED display can be made better, thus extend because steam infiltrates the component failure time caused.
Based on above-mentioned, in order to avoid reflection and/or refract light are from the marginal incident of sub-pixel to adjacent subpixels, shown in figure 2, preferably described first patterned layer 401 is also corresponding with the marginal portion of the organic material functional layer 202 of described top emitting light-emitting diode 20.
On the basis of the above, consider that passive matrix has the one side of its deficiency when being applied to large-sized monitor, preferably, the OLED display that the embodiment of the present invention provides is active array type OLED display, namely, as shown in Figure 6, described flexible OLED display also comprises thin-film transistor 50, and the drain electrode 505 of described thin-film transistor 50 is electrically connected with the first electrode of described top emitting light-emitting diode 20.
Wherein, described thin-film transistor 50 comprises grid 501, gate insulation layer 502, semiconductor active layer 503, source electrode 504 and drain electrode 505; And described thin-film transistor 50 can be top gate type, it also can be bottom gate type.Certainly, described OLED display also comprises the grid line, the grid line that are electrically connected with described grid 501 and goes between (not identifying in figure) etc., the data wire be electrically connected with described source electrode 504, data cable lead wire (not identifying in figure) etc.
On this basis, top emitting light-emitting diode 20 comprises described first electrode, described organic material functional layer 202 and the second electrode that are successively set on above described thin-film transistor 50; Described first electrode comprises opaque metal layer, and described second electrode comprises semi-transparent metal layer.
Wherein, described first electrode can be anode 201, and the second electrode can be negative electrode 203.Certainly, described first electrode also can be negative electrode 203, and the second electrode can be anode 201.
Described organic material functional layer 202 at least can comprise luminescent layer, electron transfer layer and hole transmission layer can also be comprised on this basis, further in order to the efficiency of electronics and hole injection luminescent layer can be improved, described organic material functional layer 202 can also comprise the electron injecting layer be arranged between negative electrode and described electron transfer layer further, and is arranged on the hole injection layer between described hole transmission layer and anode.
Here, the described luminescent layer of three sub-pixels in a pixel can comprise the light emitting molecule of ruddiness, green glow, blue light respectively; Certainly, above-mentioned luminescent layer also only can comprise the light emitting molecule of white light, does not limit at this.
Based on above-mentioned, in the embodiment of the present invention, the sub-pixel of OLED display can by arranging as shown in Figure 7a, also can according to arranging as shown in Figure 7b.On this basis, look over from the light direction of this OLED display, can see that the first pattern 401a in the first patterned layer 401 of described encapsulated layer 40 is between adjacent subpixels.
It should be noted that, Fig. 7 a and Fig. 7 b, only for the different arrangement modes of OLED display sub-pixel are described, part is only shown for the such as first pattern 401a relevant with inventive point, for not illustrating of haveing nothing to do with inventive point.
The embodiment of the present invention additionally provides a kind of preparation method of flexible OLED display, is included in flexible substrate substrate 10 formed to define layer 30 and encapsulated layer 40 in the top emitting light-emitting diode 20 of each subpixel area, the pixel between adjacent described top emitting light-emitting diode 20; Wherein, form described encapsulated layer 40 and comprise: formed and at least comprise the encapsulated layer 40 of the first patterned layer 401, described first patterned layer 401 at least comprises and defines the first pattern 401a corresponding to layer 30 with described pixel; Wherein, at described encapsulated layer 40 except with except described first pattern 401a corresponding position, other positions are all transparent.
Wherein, the material of described flexible substrate substrate 10 can be at least one in polyimides, Merlon, polyacrylate, Polyetherimide, polyether sulfone, PETG and PEN.
It should be noted that, first, described flexible substrate substrate 10 first can be formed on bearing substrate in the embodiment of the present invention, and then form corresponding top emitting light-emitting diode 20, pixel defines layer 30 and encapsulated layer 40 etc., finally the described OLED display formed is peeled off from above-mentioned bearing substrate.
The second, do not limit the structure of described top emitting light-emitting diode 20, it at least comprises anode 201, organic material functional layer 202, negative electrode 203.
On this basis, the material of described anode 201 and negative electrode 203 is not limited, as long as ensure that the luminous energy that top emitting light-emitting diode 20 sends sends from described encapsulated layer 40 side.
3rd, it will be understood by those skilled in the art that the effect of described encapsulated layer 40 is that the described top emitting light-emitting diode 20 of encapsulation is to stop that extraneous water vapor permeable enters in this OLED display.
On this basis, described encapsulated layer 40, except comprising described first patterned layer 401, also comprises the patterned layer of other transparent materials, does not specifically limit at this.
4th, above-mentioned opaque material is not limited, as long as its energy extinction; In addition, above-mentioned transparent material is not limited, as long as ensure corresponding light transmitance.
5th, it is corresponding that described first pattern 401a and described pixel define layer 30, it is completely corresponding that can be the first pattern 401a with described pixel define layer 30, also can be the first pattern 401a except with described pixel define layer 30 completely corresponding except, also corresponding with part top emitting light-emitting diode 20, specifically do not limit at this.
The embodiment of the present invention additionally provides a kind of preparation method of flexible OLED display, the first pattern 401a due to opaque material can absorb its light of directive, therefore, when its be arranged on define layer 30 corresponding position with described pixel time, the light that described top emitting light-emitting diode 20 can be avoided to send is injected in adjacent subpixels and produces interference to adjacent subpixels after reflection and/or refraction, thus hinge structure can improve colorimetric purity and improve color offset phenomenon.
Optionally, as shown in figures 2-6, form described first patterned layer 401, comprising: form described first patterned layer 401 be made up of the second pattern 401b of described first pattern 401a and the transparent material between described first pattern 401a.
Optionally, as in Figure 3-5, form the encapsulated layer 40 at least comprising the first patterned layer 401 be made up of the first pattern 401a of opaque material and the second pattern 401b of transparent material to comprise: the described encapsulated layer 40 forming at least three-decker that inorganic material layer 402 and organic material layer 403 replace successively; Wherein, at least organic material layer 403 described in one deck is the first patterned layer 401 be made up of the first pattern 401a of opaque material and the second pattern 401b of transparent material.
That is, ground floor inorganic material layer 402, organic material layer 403, second layer inorganic material layer 402 is formed successively, by that analogy.
It should be noted that, because encapsulated layer 40 is positioned at the luminous side of described top emitting diode 20, therefore if no special instructions, material in encapsulated layer 40 is all transparent material, such as, namely described inorganic material layer 402 is made up of transparent inorganic material, and when described organic material layer 403 is not used as the first patterned layer 401, it is made up of transparent organic material.
In addition, at least organic material layer 403 described in one deck is described first patterned layer 401, be: when at least comprising one deck organic material layer 403 in described encapsulated layer 40, the figure of this layer can be made and the identical figure of the first patterned layer 401, namely now the first pattern 401a of the first patterned layer 401 and the second pattern 401b is organic material, just the first pattern 401a adopts opaque organic material, and the second pattern 401b adopts transparent organic material.
Wherein, described opaque organic material can be such as Parylene, organic group carbon, organic group ceramic material etc.
Due to organic material layer 403 can do relatively thick, therefore, the material of described first patterned layer is set to organic material, the oblique light of greater angle scope can be absorbed, thus light can be avoided further to be injected into after reflection and/or refraction in adjacent subpixels adjacent subpixels generation interference.
Further alternative, as shown in Figure 5, described encapsulated layer 40 comprises the five-layer structure that inorganic material layer 402 and organic material layer 403 replace; Wherein, near outside one deck described in organic material layer 403 be described first patterned layer 401, another layer of described organic material layer 403 is transparent organic material layer.
That is: ground floor inorganic material layer 402, transparent organic material layer 403, second layer inorganic material layer 402, the first patterned layer 401 of organic material, third layer inorganic material layer 402 is formed successively.
On the one hand, these light can be avoided to reflect and/or be refracted in adjacent subpixels producing interference to adjacent subpixels, on the other hand, five-layer structure is set the encapsulation performance of this OLED display can be made better, thus extend because steam infiltrates the component failure time caused.
Based on above-mentioned, form the first patterned layer 401 be made up of the first pattern 401a of opaque material and the second pattern 401b of transparent material, specifically can prepare by the following method:
Defining with described pixel the described first pattern 401a that layer 30 corresponding position forms opaque organic material by evaporation coating method, and between described first pattern 401a, formed the described second pattern 401b of transparent organic material by evaporation coating method.
Example, forming described first pattern 401a can be: with mask plate for blocking, make its opening completely overlapping with described first pattern 401a to be formed, coated with parylene under deposition pressure is greater than 10P condition, thus the described first pattern 401a that can form optics percent of pass <20%.In like manner forming described second pattern 401b is also be stop with mask plate, makes its opening completely overlapping with described second pattern 401b to be formed, deposits corresponding transparent organic material, thus form described second pattern 401b.
Or, between described first pattern 401a to be formed, first formed the described second pattern 401b of transparent organic material by evaporation coating method, then defining with described pixel the described first pattern 401a that layer 30 corresponding position forms opaque organic material by inkjet printing methods.
Example, forming described second pattern 401b can be: be stop with mask plate, make its opening completely overlapping with described second pattern 401b to be formed, deposit corresponding transparent organic material, thus form described second pattern 401b; On this basis, inkjet printing methods can be adopted to form described first pattern 401a, and wherein the material of inkjet printing can be the opaque organic materials such as organic group carbon ink water, or organic group ceramic material.
On the basis of the above, in order to avoid reflection and/or refract light are from the marginal incident of sub-pixel to adjacent subpixels, shown in figure 2, preferably described first patterned layer 401 is also corresponding with the marginal portion of the organic material functional layer 202 of described top emitting light-emitting diode 20.
In addition, consider that passive matrix has the one side of its deficiency when being applied to large-sized monitor, preferably, the OLED display that the embodiment of the present invention provides is active array type OLED display, that is, as shown in Figure 6, before the described top emitting light-emitting diode 20 of formation, described method also comprises formation thin-film transistor 50, and the drain electrode 505 of described thin-film transistor 50 is electrically connected with the first electrode of described top emitting light-emitting diode 20.
Wherein, described thin-film transistor 50 comprises grid 501, gate insulation layer 502, semiconductor active layer 503, source electrode 504 and drain electrode 505; And described thin-film transistor 50 can be top gate type, it also can be bottom gate type.Certainly, described OLED display also comprises the grid line, the grid line that are electrically connected with described grid 501 and goes between (not identifying in figure) etc., the data wire be electrically connected with described source electrode 504, data cable lead wire (not identifying in figure) etc.
On this basis, top emitting light-emitting diode 20 comprises described first electrode, described organic material functional layer 202 and the second electrode that are formed in successively above described thin-film transistor 50; Described first electrode comprises opaque metal layer, and described second electrode comprises semi-transparent metal layer.
Wherein, described first electrode can be anode 201, and the second electrode can be negative electrode 203.Certainly, described first electrode also can be negative electrode 203, and the second electrode can be anode 201.
Based on above-mentioned, in the embodiment of the present invention, the sub-pixel of OLED display can by arranging as shown in Figure 7a, also can according to arranging as shown in Figure 7b.On this basis, look over from the light direction of this OLED display, can see that the first pattern 401a in the first patterned layer 401 of described encapsulated layer 40 is between adjacent subpixels.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; change can be expected easily or replace, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of described claim.
Claims (13)
1. a flexible OLED display, comprises flexible substrate substrate, is arranged on described flexible substrate substrate and defines layer and encapsulated layer in the top emitting light-emitting diode of each subpixel area, pixel between adjacent described top emitting light-emitting diode; It is characterized in that,
Described encapsulated layer at least comprises the first patterned layer, and described first patterned layer at least comprises and defines the first pattern corresponding to layer with described pixel;
Wherein, at described encapsulated layer except with except described first pattern corresponding position, other positions are all transparent.
2. flexible OLED display according to claim 1, is characterized in that, described first patterned layer also comprises the second pattern of the transparent material between described first pattern.
3. flexible OLED display according to claim 1, is characterized in that, described encapsulated layer comprises at least three-decker that inorganic material layer and organic material layer are arranged alternately;
Wherein, at least organic material layer described in one deck is described first patterned layer.
4. flexible OLED display according to claim 3, is characterized in that, described encapsulated layer comprises the five-layer structure that inorganic material layer and organic material layer are arranged alternately;
Wherein, near outside one deck described in organic material layer be described first patterned layer, another layer of described organic material layer is transparent organic material layer.
5. the flexible OLED display according to any one of claim 1-4, is characterized in that, described first patterned layer is also corresponding with the marginal portion of the organic material functional layer of described top emitting light-emitting diode.
6. the flexible OLED display according to any one of claim 1-4, is characterized in that, described flexible OLED display also comprises thin-film transistor, and the drain electrode of described thin-film transistor is electrically connected with the first electrode of described top emitting light-emitting diode;
Wherein, top emitting light-emitting diode comprises and is successively set on described first electrode above described thin-film transistor, described organic material functional layer and the second electrode; Described first electrode comprises opaque metal layer, and described second electrode comprises semi-transparent metal layer.
7. a preparation method for flexible OLED display, is included in flexible substrate substrate formed and defines layer and encapsulated layer in the top emitting light-emitting diode of each subpixel area, the pixel between adjacent described top emitting light-emitting diode; It is characterized in that, form described encapsulated layer and comprise:
Formed and at least comprise the encapsulated layer of the first patterned layer, described first patterned layer at least comprises and defines the first pattern corresponding to layer with described pixel;
Wherein, at described encapsulated layer except with except described first pattern corresponding position, other positions are all transparent.
8. method according to claim 7, is characterized in that, forms described first patterned layer, comprising: form described first patterned layer be made up of the second pattern of described first pattern and the transparent material between described first pattern.
9. method according to claim 8, is characterized in that, forms the encapsulated layer at least comprising the first patterned layer, comprising:
Form the described encapsulated layer of at least three-decker that inorganic material layer and organic material layer replace successively;
Wherein, at least organic material layer described in one deck is the first patterned layer be made up of the first pattern of opaque material and the second pattern of transparent material.
10. method according to claim 9, is characterized in that, described encapsulated layer comprises the five-layer structure that inorganic material layer and organic material layer replace;
Wherein, near outside one deck described in organic material layer be described first patterned layer, another layer of described organic material layer is transparent organic material layer.
11. methods according to Claim 8 described in-10 any one, is characterized in that, form the first patterned layer be made up of the first pattern of opaque material and the second pattern of transparent material and comprise:
Defining with described pixel described first pattern that layer corresponding position forms opaque organic material by evaporation coating method; Between described first pattern, described second pattern of transparent organic material is formed by evaporation coating method; Or,
Between described first pattern to be formed, described second pattern of transparent organic material is formed by evaporation coating method; Defining with described pixel described first pattern that layer corresponding position forms opaque organic material by inkjet printing methods.
12. methods according to any one of claim 7-10, it is characterized in that, described first pattern is also corresponding with the marginal portion of the organic material functional layer of described top emitting light-emitting diode.
13. methods according to any one of claim 7-10, it is characterized in that, before the described top emitting light-emitting diode of formation, described method also comprises formation thin-film transistor, and the drain electrode of described thin-film transistor is electrically connected with the first electrode of described top emitting light-emitting diode;
Wherein, top emitting light-emitting diode comprises and is formed in described first electrode above described thin-film transistor, described organic material functional layer and the second electrode successively; Described first electrode comprises opaque metal layer, and described second electrode comprises semi-transparent metal layer.
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