CN104851903B - A kind of flexible OLED display and preparation method thereof - Google Patents
A kind of flexible OLED display and preparation method thereof Download PDFInfo
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- CN104851903B CN104851903B CN201510194223.0A CN201510194223A CN104851903B CN 104851903 B CN104851903 B CN 104851903B CN 201510194223 A CN201510194223 A CN 201510194223A CN 104851903 B CN104851903 B CN 104851903B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
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Abstract
A kind of flexible OLED display of the embodiment of the present invention offer and preparation method thereof, is related to display technology field, the light being emitted from sub-pixel interference adjacent subpixels is can avoid, to which excitation purity can be improved and improve color offset phenomenon.The flexible OLED display, including flexible substrate substrate, be arranged on the flexible substrate substrate positioned at the top emitting light emitting diode of each subpixel area, pixel defining layer and encapsulated layer between the adjacent top emitting light emitting diode；The encapsulated layer includes at least the first pattern layer, and first pattern layer includes at least the first pattern corresponding with the pixel defining layer；Wherein, the encapsulated layer except in addition to first pattern corresponding position, it is transparent at other positions.For flexible OLED display and its preparation.
Description
Technical field
The present invention relates to display technology fields more particularly to a kind of flexible OLED display and preparation method thereof.
Background technology
Flexible display technologies were having development at full speed in recent years, thus drove flexible display from the size of screen to aobvious
The quality shown all has made great progress.Either it is on the verge of cathode-ray tube (Cathode Ray Tube, the abbreviation to disappear
CRT), the still liquid crystal display (Liquid Crystal Display, abbreviation LCD) of mainstream now, inherently belongs to biography
The rigid display of system.Compared with traditional rigid display, flexible display has many advantages, such as, such as impact resistance, antidetonation
Ability is strong, light-weight, small, carries more convenient etc..
Currently, flexible display is mainly flexible OLED display.As shown in Figure 1, the flexible OLED display includes soft
Property underlay substrate 10, the anode 201 being arranged at each sub-pixel position of the flexible substrate substrate 10, organic material function
It layer 202, cathode 203 and pixel defining layer 30 between two neighboring sub-pixel and is shown positioned at the flexibility OLED
Show the encapsulated layer 40 of device the top.
It can be caused from son in the state of being frequently in bending due to flexible OLED display based on above structure
The light that the organic material functional layer 202 of pixel is sent out can occur to reflect and reflect in encapsulated layer 40, so as to cause light from adjacent
Sub-pixel is emitted, and generates color purity decline and color offset phenomenon, and then influence display effect.
Invention content
The embodiment of the present invention provides a kind of flexible OLED display and preparation method thereof, can avoid being emitted from sub-pixel
Light interferes adjacent subpixels, to which excitation purity can be improved and improve color offset phenomenon.
In order to achieve the above objectives, the embodiment of the present invention adopts the following technical scheme that：
On the one hand, a kind of flexible OLED display, including flexible substrate substrate, setting are provided in the flexible substrate substrate
The upper top emitting light emitting diode positioned at each subpixel area, the pixel between the adjacent top emitting light emitting diode
Define layer and encapsulated layer；The encapsulated layer includes at least the first pattern layer, and first pattern layer includes at least and the picture
Element defines corresponding first pattern of layer；Wherein, the encapsulated layer except in addition to first pattern corresponding position, other positions
Place is transparent.
Optionally, first pattern layer further includes the second pattern of the transparent material between first pattern.
Optionally, the encapsulated layer includes at least three-decker that inorganic material layer and organic material layer are arranged alternately；Its
In, at least one layer of organic material layer is first pattern layer.
Further alternative, the encapsulated layer includes the five-layer structure that inorganic material layer and organic material layer are arranged alternately；
Wherein, it is first pattern layer near one layer of organic material layer in outside, another layer organic material layer is
Bright organic material layer.
Based on above-mentioned, it is preferred that organic material function of first pattern layer also with the top emitting light emitting diode
The marginal portion of layer corresponds to.
Preferably, the flexible OLED display further includes thin film transistor (TFT), the drain electrode of the thin film transistor (TFT) with it is described
The first electrode of top emitting light emitting diode is electrically connected；Wherein, top emitting light emitting diode includes being successively set on the film
The first electrode, the organic material functional layer above transistor and second electrode；The first electrode includes opaque
Metal layer, the second electrode include semi-transparent metal layer.
On the other hand, a kind of preparation method of flexible OLED display is provided, including position is formed on flexible substrate substrate
It is defined in the top emitting light emitting diode of each subpixel area, the pixel between the adjacent top emitting light emitting diode
Layer and encapsulated layer；Forming the encapsulated layer includes：Form the encapsulated layer including at least the first pattern layer, first pattern
Layer includes at least the first pattern corresponding with the pixel defining layer；Wherein, it is removed and first pattern pair in the encapsulated layer
It answers outside at position, it is transparent at other positions.
Optionally, first pattern layer is formed, including：Formed by first pattern and positioned at first pattern it
Between transparent material the second pattern constitute first pattern layer.
Further alternative, the encapsulated layer formed including at least the first pattern layer includes：Sequentially form inorganic material layer and
The alternate at least encapsulated layer of three-decker of organic material layer；Wherein, at least one layer of organic material layer is by impermeable
The first pattern layer that first pattern of bright material and the second pattern of transparent material are constituted.
Further alternative, the encapsulated layer includes inorganic material layer and the alternate five-layer structure of organic material layer；Wherein,
One layer of organic material layer near outside is first pattern layer, and another layer organic material layer is transparent organic
Material layer.
Optionally, the first pattern layer being made of the second pattern of the first pattern of opaque material and transparent material is formed
Including：By evaporation coating method in first figure for forming opaque organic material with the pixel defining layer corresponding position
Case；Second pattern of transparent organic material is formed between first pattern by evaporation coating method；Alternatively, passing through vapor deposition
Method forms second pattern of transparent organic material between first pattern to be formed；Pass through inkjet printing methods
In first pattern for forming opaque organic material with the pixel defining layer corresponding position.
Based on above-mentioned, it is preferred that organic material functional layer of first pattern also with the top emitting light emitting diode
Marginal portion correspond to.
Preferably, before forming the top emitting light emitting diode, the method further includes forming thin film transistor (TFT), described
The drain electrode of thin film transistor (TFT) is electrically connected with the first electrode of the top emitting light emitting diode；Wherein, top emitting light emitting diode
Including the first electrode, the organic material functional layer and the second electrode being sequentially formed above the thin film transistor (TFT)；
The first electrode includes opaque metal layer, and the second electrode includes semi-transparent metal layer.
A kind of flexible OLED display of the embodiment of the present invention offer and preparation method thereof, the flexible OLED display packet
Include flexible substrate substrate, the top emitting light emitting diode positioned at each subpixel area is set on the flexible substrate substrate,
Pixel defining layer between the adjacent top emitting light emitting diode and encapsulated layer；The encapsulated layer include at least by
The first pattern layer that first pattern of opaque material and the second pattern of transparent material are constituted；Wherein, first pattern with
The pixel defining layer corresponds to, and second pattern is between first pattern.Due to the first pattern of opaque material
Directive its light can be absorbed, therefore, when it is arranged when with the pixel defining layer corresponding position, the top is can avoid and sends out
The light that light emitting diode is sent out is penetrated to be injected into after reflection and/or refraction in adjacent subpixels to adjacent subpixels generation interference,
So as to improve excitation purity compared with the prior art and improve color offset phenomenon.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
Obtain other attached drawings according to these attached drawings.
Fig. 1 is a kind of structural schematic diagram for flexible OLED display that the prior art provides；
Fig. 2 is a kind of structural schematic diagram one of flexible OLED display provided in an embodiment of the present invention；
Fig. 3 is a kind of structural schematic diagram one of encapsulated layer provided in an embodiment of the present invention；
Fig. 4 is a kind of structural schematic diagram two of encapsulated layer provided in an embodiment of the present invention；
Fig. 5 is a kind of structural schematic diagram three of encapsulated layer provided in an embodiment of the present invention；
Fig. 6 is a kind of structural schematic diagram two of flexible OLED display provided in an embodiment of the present invention；
Fig. 7 a are a kind of flexible OLED display sub-pixel arrangement schematic diagram one provided in an embodiment of the present invention；
Fig. 7 b are a kind of flexible OLED display sub-pixel arrangement schematic diagram two provided in an embodiment of the present invention.
Reference numeral：
10- flexible substrate substrates；20- top emitting light emitting diodes；201- anodes；202- organic material functional layers；203 is cloudy
Pole；30- pixel defining layers；40- encapsulated layers；The first pattern layers of 401-；The first patterns of 401a-；The second patterns of 401b-；402- without
Machine material layer；403- organic materials are layer by layer；50- thin film transistor (TFT)s；501- grids；502- gate insulation layers；503- semiconductor actives
Layer；504- source electrodes；505- drains.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a kind of flexible OLED displays, and as shown in figures 2-6, which includes
The top emitting light emitting diode for being located at each subpixel area is arranged on the flexible substrate substrate 10 in flexible substrate substrate 10
20, the pixel defining layer 30 and encapsulated layer 40 between the adjacent top emitting light emitting diode；The encapsulated layer 40 to
Include the first pattern layer 401 less, first pattern layer 401 includes at least first pattern corresponding with the pixel defining layer 30
401a；Wherein, the encapsulated layer 40 except in addition to 401 corresponding position of the first pattern, it is transparent at other positions.
Wherein, the material of the flexible substrate substrate 10 can be polyimides, makrolon, polyacrylate, polyethers
At least one of acid imide, polyether sulfone, polyethylene terephthalate and polyethylene naphthalate.
It should be noted that first, the structure of the top emitting light emitting diode 20 is not defined, is included at least
Anode 201, organic material functional layer 202, cathode 203.
On this basis, the material of the anode 201 and cathode 203 is not defined, as long as ensureing that top emitting shines
The luminous energy that diode 20 is sent out is emitted from 40 side of the encapsulated layer.
Second, it will be understood by those skilled in the art that the effect of the encapsulated layer 40 is the encapsulation top emitting luminous two
Pole pipe 20 is to stop that extraneous steam penetrates into the OLED display.
On this basis, the encapsulated layer 40 further includes other transparent materials in addition to including first pattern layer 401
Pattern layer does not limit specifically herein.
Third is not defined above-mentioned opaque material, as long as it can extinction；In addition, not to above-mentioned saturating
Bright material is defined, as long as ensureing corresponding light transmission rate.
4th, the first pattern 401a is corresponding with the pixel defining layer 30, can be the first pattern 401a with it is described
Pixel defining layer 30 is completely corresponding, can also be the first pattern 401a in addition to completely corresponding with the pixel defining layer 30, also with
Part top emitting light emitting diode 20 corresponds to, and does not limit herein specifically.
An embodiment of the present invention provides a kind of flexible OLED displays, including flexible substrate substrate 10, setting are described soft
Property underlay substrate 10 on be located at each subpixel area top emitting light emitting diode 20, be located at the adjacent top emitting shine two
Pixel defining layer 30 between pole pipe 20 and encapsulated layer 40；The encapsulated layer 40 includes at least the first pattern layer 401, described
First pattern layer 401 includes at least first pattern 401a corresponding with the pixel defining layer 30；Wherein, in the encapsulated layer 40
Except in addition to 401 corresponding position of the first pattern, it is transparent at other positions.Due to the first pattern 401a of opaque material
Directive its light can be absorbed, therefore, when it is arranged when with 30 corresponding position of pixel defining layer, can avoid the top
The light that transmitting light emitting diode 20 is sent out is injected into adjacent subpixels to generate adjacent subpixels after reflection and/or refraction and do
It disturbs, so as to improve excitation purity compared with the prior art and improve color offset phenomenon.
Optionally, as shown in figures 2-6, first pattern layer 401 further includes between the first pattern 401a
Second pattern 401b of transparent material.
It can guarantee the consistency of thickness of first pattern layer 401 in this way, on this basis, the thickness to ensure encapsulated layer is equal
One, it just no longer needs to carry out patterning process when being subsequently formed film layer.
Optionally, as in Figure 3-5, the encapsulated layer 40 includes that inorganic material layer 402 and organic material layer 403 are alternately set
At least three-decker set；Wherein, at least one layer of organic material layer 403 is first pattern layer 401.
Here, inorganic material layer 402 and organic material layer refer to alternately：First setting first layer inorganic material layer 402, at this
One layer of organic material layer 403 is set on first layer inorganic material layer 402, second is then arranged again on the organic material layer 403
Layer inorganic material layer 402, and so on.
It should be noted that since encapsulated layer 40 is located at the luminous side of the top emitting diode 20, such as without spy
Do not mentionlet alone bright, the material in encapsulated layer 40 is all transparent material, for example, the inorganic material layer 402 is i.e. by transparent inorganic material system
At when the organic material layer 403 is not used as the first pattern layer 401, being made of transparent organic material.
In addition, at least one layer of organic material layer 403 is first pattern layer 401, as：When the encapsulated layer 40
In include at least one layer of organic material layer 403 when, the figure of this layer can be made and 401 identical figure of the first pattern layer
Shape, i.e., the first pattern 401a and the second pattern 401b of the first pattern layer 401 are organic material at this time, only the first pattern
401a uses opaque organic material, the second pattern 401b to use transparent organic material.
Wherein, the opaque organic material for example can be Parylene, organic group carbon, organic base ceramic material
Deng.
It is exemplary, as shown in figure 3, the encapsulated layer 40 include first layer inorganic material layer 402, setting the first layer without
First pattern layer 401 of the organic material in machine material layer 402, the inorganic material of the second layer being arranged in first pattern layer 401
The bed of material 402.
Again or, as shown in figure 4, the encapsulated layer 40 include first layer inorganic material layer 402, setting the first layer without
First pattern layer 401 of the organic material in machine material layer 402, the inorganic material of the second layer being arranged in first pattern layer 401
The first pattern layer 401 of the organic material on the second layer inorganic material layer 402 is arranged in the bed of material 402, is arranged in first figure
Third layer inorganic material layer 402 in pattern layer 401.
Due to organic material layer 403 can do it is relatively thick, the material of first pattern layer 401 is set
It is set to organic material, the oblique light of greater angle range can be absorbed, so as to further avoid light after reflection and/or refraction
It is injected into adjacent subpixels and interference is generated to adjacent subpixels.
It is further alternative, it is handed over as shown in figure 5, the encapsulated layer 40 includes inorganic material layer 402 and organic material layer 403
For the five-layer structure of setting；Wherein, it is first pattern layer 401 near one layer of organic material layer 403 in outside, separately
One layer of organic material layer 403 is transparent organic material layer.
I.e.：First setting first layer inorganic material layer 402, setting layer of transparent has on the first layer inorganic material layer 402
Second layer inorganic material layer 402 is arranged on the organic material layer by layer 403 in machine material layer 403 again, in the second layer inorganic material
First pattern layer 401 of organic material is set again on layer 402, then the inorganic material of third layer is set in first pattern layer 401
The bed of material 402.
On the one hand, it to avoid these light reflections and/or can be refracted in adjacent subpixels to adjacent subpixels generation interference,
On the other hand, setting five-layer structure can make the encapsulation performance of the OLED display more preferable, to extend since steam infiltration is led
The component failure time of cause.
Based on above-mentioned, in order to avoid reflecting and/or reflecting light from the marginal incident to adjacent subpixels of sub-pixel, reference
Shown in Fig. 2, preferably first pattern layer 401 also with the organic material functional layer 202 of the top emitting light emitting diode 20
Marginal portion corresponds to.
On the basis of the above, it is contemplated that passive matrix is applied to have its insufficient one side when large-sized monitor, it is preferred that
OLED display provided in an embodiment of the present invention is active array type OLED display, that is, as shown in fig. 6, the flexibility OLED
Display further includes thin film transistor (TFT) 50, the drain electrode 505 of the thin film transistor (TFT) 50 and the top emitting light emitting diode 20
First electrode is electrically connected.
Wherein, the thin film transistor (TFT) 50 includes grid 501, gate insulation layer 502, semiconductor active layer 503, source electrode 504
With drain electrode 505；And the thin film transistor (TFT) 50 can be top gate type, can also be bottom gate type.Certainly, the OLED display is also
Include the grid line being electrically connected with the grid 501, grid line lead (not identified in figure) etc., is electrically connected with the source electrode 504
Data line, data cable lead wire (not identified in figure) etc..
On this basis, top emitting light emitting diode 20 is including being successively set on the described of 50 top of the thin film transistor (TFT)
First electrode, the organic material functional layer 202 and second electrode；The first electrode includes opaque metal layer, and described
Two electrodes include semi-transparent metal layer.
Wherein, the first electrode can be anode 201, and second electrode can be cathode 203.Certainly, first electricity
Pole can also be cathode 203, and second electrode can be anode 201.
The organic material functional layer 202 can include at least luminescent layer, can also include electron-transport on this basis
Layer and hole transmission layer, further for the efficiency that can improve electrons and holes injection luminescent layer, the organic material function
Layer 202 can also include further the electron injecting layer being arranged between cathode and the electron transfer layer, and be arranged in institute
State the hole injection layer between hole transmission layer and anode.
Here, the luminescent layer of three sub-pixels in a pixel can respectively include the hair of feux rouges, green light, blue light
Optical molecule；Certainly, above-mentioned luminescent layer can also only include the light emitting molecule of white light, not limit herein.
Based on above-mentioned, in the embodiment of the present invention sub-pixel of OLED display can by arranging as shown in Figure 7a,
It can be according to arranging as shown in Figure 7b.On this basis, it is looked over from the light direction of the OLED display, it can be seen that
The first pattern 401a in first pattern layer 401 of the encapsulated layer 40 is between adjacent subpixels.
It should be noted that Fig. 7 a and Fig. 7 b, only to illustrate the different arrangement modes of OLED display sub-pixel, for
Such as first pattern 401a related with inventive point only shows part, and unrelated with inventive point is not painted.
The embodiment of the present invention additionally provides a kind of preparation method of flexible OLED display, is included in flexible substrate substrate 10
It is upper formed positioned at each subpixel area top emitting light emitting diode 20, be located at the adjacent top emitting light emitting diode 20 it
Between pixel defining layer 30 and encapsulated layer 40；Wherein, forming the encapsulated layer 40 includes：It is formed and includes at least the first pattern
The encapsulated layer 40 of layer 401, first pattern layer 401 include at least first pattern corresponding with the pixel defining layer 30
401a；Wherein, the encapsulated layer 40 except in addition to the corresponding positions the first pattern 401a, it is transparent at other positions.
Wherein, the material of the flexible substrate substrate 10 can be polyimides, makrolon, polyacrylate, polyethers
At least one of acid imide, polyether sulfone, polyethylene terephthalate and polyethylene naphthalate.
It should be noted that first, the flexible liner base can be first formed on bearing substrate in the embodiment of the present invention
Then bottom 10 re-forms corresponding top emitting light emitting diode 20, pixel defining layer 30 and encapsulated layer 40 etc., finally by shape
At the OLED display removed from above-mentioned bearing substrate.
Second, the structure of the top emitting light emitting diode 20 is not defined, includes at least anode 201, organic
Material function layer 202, cathode 203.
On this basis, the material of the anode 201 and cathode 203 is not defined, as long as ensureing that top emitting shines
The luminous energy that diode 20 is sent out is sent out from 40 side of the encapsulated layer.
Third, it will be understood by those skilled in the art that the effect of the encapsulated layer 40 is the encapsulation top emitting luminous two
Pole pipe 20 is to stop that extraneous steam penetrates into the OLED display.
On this basis, the encapsulated layer 40 further includes other transparent materials in addition to including first pattern layer 401
Pattern layer does not limit specifically herein.
4th, above-mentioned opaque material is not defined, as long as it can extinction；In addition, not to above-mentioned saturating
Bright material is defined, as long as ensureing corresponding light transmission rate.
5th, the first pattern 401a is corresponding with the pixel defining layer 30, can be the first pattern 401a with it is described
Pixel defining layer 30 is completely corresponding, can also be the first pattern 401a in addition to completely corresponding with the pixel defining layer 30, also with
Part top emitting light emitting diode 20 corresponds to, and does not limit herein specifically.
The embodiment of the present invention additionally provides a kind of preparation method of flexible OLED display, due to the first of opaque material
Pattern 401a can absorb directive its light, therefore, when it is arranged when with 30 corresponding position of pixel defining layer, can keep away
Exempt from the light that the top emitting light emitting diode 20 is sent out to be injected into after reflection and/or refraction in adjacent subpixels to adjacent sub- picture
Element generates interference, so as to improve excitation purity compared with the prior art and improve color offset phenomenon.
Optionally, as shown in figures 2-6, first pattern layer 401 is formed, including：It is formed by the first pattern 401a
And first pattern layer 401 that the second pattern 401b of the transparent material between the first pattern 401a is constituted.
Optionally, as in Figure 3-5, the first pattern 401a and transparent material included at least by opaque material is formed
The encapsulated layer 40 for the first pattern layer 401 that second pattern 401b is constituted includes：Sequentially form inorganic material layer 402 and organic material
The encapsulated layer 40 of the alternate at least three-decker of layer 403；Wherein, at least one layer of organic material layer 403 is by impermeable
The first pattern layer 401 that first pattern 401a of bright material and the second pattern 401b of transparent material are constituted.
That is, first layer inorganic material layer 402, organic material layer 403, second layer inorganic material layer 402 are sequentially formed, with this
Analogize.
It should be noted that since encapsulated layer 40 is located at the luminous side of the top emitting diode 20, such as without spy
Do not mentionlet alone bright, the material in encapsulated layer 40 is all transparent material, for example, the inorganic material layer 402 is i.e. by transparent inorganic material system
At when the organic material layer 403 is not used as the first pattern layer 401, being made of transparent organic material.
In addition, at least one layer of organic material layer 403 is first pattern layer 401, as：When the encapsulated layer 40
In include at least one layer of organic material layer 403 when, the figure of this layer can be made and 401 identical figure of the first pattern layer
Shape, i.e., the first pattern 401a and the second pattern 401b of the first pattern layer 401 are organic material at this time, only the first pattern
401a uses opaque organic material, the second pattern 401b to use transparent organic material.
Wherein, the opaque organic material for example can be Parylene, organic group carbon, organic base ceramic material
Deng.
Due to organic material layer 403 can do it is relatively thick, set the material of first pattern layer to
Organic material can absorb the oblique light of greater angle range, be injected after reflection and/or refraction so as to further avoid light
Interference is generated to adjacent subpixels in adjacent subpixels.
It is further alternative, it is handed over as shown in figure 5, the encapsulated layer 40 includes inorganic material layer 402 and organic material layer 403
The five-layer structure replaced；Wherein, it is first pattern layer 401, another layer near one layer of organic material layer 403 in outside
The organic material layer 403 is transparent organic material layer.
I.e.：Sequentially form first layer inorganic material layer 402, transparent organic material layer 403, second layer inorganic material layer 402,
First pattern layer 401 of organic material, third layer inorganic material layer 402.
On the one hand, it to avoid these light reflections and/or can be refracted in adjacent subpixels to adjacent subpixels generation interference,
On the other hand, setting five-layer structure can make the encapsulation performance of the OLED display more preferable, to extend since steam infiltration is led
The component failure time of cause.
Based on above-mentioned, formed and to be made of the second pattern 401b of the first pattern 401a of opaque material and transparent material
First pattern layer 401, can specifically be prepared via a method which：
Described the of opaque organic material is being formed with 30 corresponding position of the pixel defining layer by evaporation coating method
One pattern 401a, and second pattern of transparent organic material is formed by evaporation coating method between the first pattern 401a
401b。
Exemplary, forming the first pattern 401a can be：It is to block with mask plate, makes its opening and institute to be formed
It is completely overlapped to state the first pattern 401a, coated with parylene under the conditions of deposition pressure is more than 10P is logical so as to form optics
Cross rate<20% the first pattern 401a.It is also so that it is opened for blocking with mask plate similarly to form the second pattern 401b
Mouth is completely overlapped with the second pattern 401b to be formed, corresponding transparent organic material is deposited, to form described second
Pattern 401b.
Alternatively, first passing through the institute that evaporation coating method forms transparent organic material between the first pattern 401a to be formed
The second pattern 401b is stated, then opaque is had being formed with 30 corresponding position of the pixel defining layer by inkjet printing methods
The first pattern 401a of machine material.
Exemplary, forming the second pattern 401b can be：It is blocking with mask plate, makes its opening and institute to be formed
It is completely overlapped to state the second pattern 401b, deposits corresponding transparent organic material, to form the second pattern 401b；In this base
On plinth, inkjet printing methods may be used and form the first pattern 401a, the wherein material of inkjet printing can be organic group
The opaque organic material such as carbon ink water or organic base ceramic material.
On the basis of the above, in order to avoid reflecting and/or reflecting light from the marginal incident to adjacent subpixels of sub-pixel,
Refering to what is shown in Fig. 2, it is preferred that organic material functional layer of first pattern layer 401 also with the top emitting light emitting diode 20
202 marginal portion corresponds to.
In addition, it is contemplated that passive matrix is applied to have its insufficient one side when large-sized monitor, it is preferred that the present invention is real
The OLED display for applying example offer is active array type OLED display, that is, as shown in fig. 6, shining forming the top emitting
Before diode 20, the method further includes forming thin film transistor (TFT) 50, and the drain electrode 505 of the thin film transistor (TFT) 50 is sent out with the top
Penetrate the first electrode electrical connection of light emitting diode 20.
Wherein, the thin film transistor (TFT) 50 includes grid 501, gate insulation layer 502, semiconductor active layer 503, source electrode 504
With drain electrode 505；And the thin film transistor (TFT) 50 can be top gate type, can also be bottom gate type.Certainly, the OLED display is also
Include the grid line being electrically connected with the grid 501, grid line lead (not identified in figure) etc., is electrically connected with the source electrode 504
Data line, data cable lead wire (not identified in figure) etc..
On this basis, top emitting light emitting diode 20 is including being sequentially formed at the described of 50 top of the thin film transistor (TFT)
First electrode, the organic material functional layer 202 and second electrode；The first electrode includes opaque metal layer, and described
Two electrodes include semi-transparent metal layer.
Wherein, the first electrode can be anode 201, and second electrode can be cathode 203.Certainly, first electricity
Pole can also be cathode 203, and second electrode can be anode 201.
Based on above-mentioned, in the embodiment of the present invention sub-pixel of OLED display can by arranging as shown in Figure 7a,
It can be according to arranging as shown in Figure 7b.On this basis, it is looked over from the light direction of the OLED display, it can be seen that
The first pattern 401a in first pattern layer 401 of the encapsulated layer 40 is between adjacent subpixels.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (11)
1. a kind of flexible OLED display, including flexible substrate substrate, setting are located at each son on the flexible substrate substrate
The top emitting light emitting diode of pixel region, the pixel defining layer between the adjacent top emitting light emitting diode and
Encapsulated layer；It is characterized in that,
The encapsulated layer includes at least the first pattern layer, and first pattern layer includes at least corresponding with the pixel defining layer
First pattern；
Wherein, the encapsulated layer except in addition to first pattern corresponding position, it is transparent at other positions；
The encapsulated layer is used to encapsulate the top emitting light emitting diode to stop that extraneous steam penetrates into the flexibility
In OLED display；
First pattern layer further includes the second pattern of the transparent material between first pattern.
2. flexible OLED display according to claim 1, which is characterized in that the encapsulated layer include inorganic material layer and
At least three-decker that organic material layer is arranged alternately；
Wherein, at least one layer of organic material layer is first pattern layer.
3. flexible OLED display according to claim 2, which is characterized in that the encapsulated layer include inorganic material layer and
The five-layer structure that organic material layer is arranged alternately；
Wherein, it is first pattern layer, another layer organic material layer near one layer of organic material layer in outside
For transparent organic material layer.
4. according to claim 1-3 any one of them flexible OLED displays, which is characterized in that first pattern layer also with
The marginal portion of the organic material functional layer of the top emitting light emitting diode corresponds to.
5. according to claim 1-3 any one of them flexible OLED displays, which is characterized in that the flexible OLED display
Further include thin film transistor (TFT), the drain electrode of the thin film transistor (TFT) is electrically connected with the first electrode of the top emitting light emitting diode；
Wherein, top emitting light emitting diode includes being successively set on the first electrode above the thin film transistor (TFT), organic
Material function layer and second electrode；The first electrode includes opaque metal layer, and the second electrode includes semi-transparent metals
Layer.
6. a kind of preparation method of flexible OLED display, including formed on flexible substrate substrate and be located at each subpixel area
Top emitting light emitting diode, pixel defining layer and encapsulated layer between the adjacent top emitting light emitting diode；Its
It is characterized in that, forming the encapsulated layer includes：
The encapsulated layer including at least the first pattern layer is formed, first pattern layer includes at least corresponding with the pixel defining layer
The first pattern；
Wherein, the encapsulated layer except in addition to first pattern corresponding position, it is transparent at other positions；
It forms the encapsulated layer and encapsulates the top emitting light emitting diode to stop that extraneous steam penetrates into the flexibility
In OLED display；
First pattern layer is formed, including：It is formed by first pattern and the transparent material between first pattern
First pattern layer that second pattern of material is constituted.
7. according to the method described in claim 6, it is characterized in that, formed including at least the first pattern layer encapsulated layer, including：
Sequentially form inorganic material layer and the organic material layer alternately at least encapsulated layer of three-decker；
Wherein, at least one layer of organic material layer is by the first pattern of opaque material and the second pattern structure of transparent material
At the first pattern layer.
8. the method according to the description of claim 7 is characterized in that the encapsulated layer includes inorganic material layer and organic material layer
Alternate five-layer structure；
Wherein, it is first pattern layer, another layer organic material layer near one layer of organic material layer in outside
For transparent organic material layer.
9. according to claim 6-8 any one of them methods, which is characterized in that formed by opaque material the first pattern and
The first pattern layer that second pattern of transparent material is constituted includes：
By evaporation coating method in first pattern for forming opaque organic material with the pixel defining layer corresponding position；
Second pattern of transparent organic material is formed between first pattern by evaporation coating method；Alternatively,
Second pattern of transparent organic material is formed between first pattern to be formed by evaporation coating method；Pass through
Inkjet printing methods are in first pattern for forming opaque organic material with the pixel defining layer corresponding position.
10. according to claim 6-8 any one of them methods, which is characterized in that first pattern also with the top emitting
The marginal portion of the organic material functional layer of light emitting diode corresponds to.
11. according to claim 6-8 any one of them methods, which is characterized in that forming the top emitting light emitting diode
Before, the method further includes forming thin film transistor (TFT), drain electrode and the top emitting light emitting diode of the thin film transistor (TFT)
First electrode is electrically connected；
Wherein, top emitting light emitting diode includes being sequentially formed at the first electrode above the thin film transistor (TFT), organic
Material function layer and second electrode；The first electrode includes opaque metal layer, and the second electrode includes semi-transparent metals
Layer.
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| KR102462423B1 (en) * | 2015-09-15 | 2022-11-03 | 삼성디스플레이 주식회사 | Organic luminescence emitting display device and the method of manufacturing the same |
| CN106654047B (en) * | 2016-12-22 | 2019-02-01 | 武汉华星光电技术有限公司 | OLED display panel and preparation method thereof |
| CN108269825A (en) * | 2016-12-30 | 2018-07-10 | 昆山工研院新型平板显示技术中心有限公司 | Organic luminous fiber and its manufacturing method and organic light emitting display and its manufacturing method |
| CN107221553A (en) * | 2017-06-01 | 2017-09-29 | 深圳市华星光电技术有限公司 | Improve the method and display panel of big visual angle colour cast |
| CN107565045B (en) * | 2017-08-08 | 2019-11-08 | 武汉华星光电半导体显示技术有限公司 | The encapsulating method and structure of flexible OLED panel |
| CN109713007A (en) | 2017-10-25 | 2019-05-03 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, display panel, display device |
| CN107895728B (en) * | 2017-12-05 | 2020-07-28 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display device comprising array substrate |
| CN108321176B (en) | 2018-02-02 | 2020-07-03 | 京东方科技集团股份有限公司 | Flexible display panel, manufacturing method thereof and display device |
| CN111384092B (en) * | 2018-12-29 | 2024-01-30 | 北京小米移动软件有限公司 | Terminal and manufacturing method of organic light-emitting diode display panel |
| CN109742112B (en) * | 2019-01-08 | 2021-10-12 | 京东方科技集团股份有限公司 | OLED display panel and electronic equipment |
| CN109904347B (en) | 2019-03-15 | 2020-07-31 | 京东方科技集团股份有限公司 | Light emitting device, method of manufacturing the same, and display apparatus |
| CN109873024A (en) | 2019-04-09 | 2019-06-11 | 京东方科技集团股份有限公司 | Display base plate and preparation method thereof, display device |
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