CN102664187B - Organic light emitting diode display and manufacture method thereof - Google Patents
Organic light emitting diode display and manufacture method thereof Download PDFInfo
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- CN102664187B CN102664187B CN201210171440.4A CN201210171440A CN102664187B CN 102664187 B CN102664187 B CN 102664187B CN 201210171440 A CN201210171440 A CN 201210171440A CN 102664187 B CN102664187 B CN 102664187B
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Abstract
The invention discloses a kind of organic light emitting diode display, comprising: base main body; Holding wire, is positioned in base main body; Electric current supply line, is positioned in base main body; One TFT, a TFT comprise a TFT oxide semiconductor layer, a TFT source electrode, a TFT drain electrode, a TFT grid; 2nd TFT, the 2nd TFT comprise the 2nd TFT oxide semiconductor layer, the 2nd TFT source electrode, the 2nd TFT drain electrode, the 2nd TFT grid; Common electrode, between the first TFT and the 2nd TFT; Organic luminous layer, is positioned on common electrode; Transparency electrode, is positioned on organic luminous layer and transparency electrode is connected to the drain electrode of the 2nd TFT.The invention also discloses a kind of method manufacturing organic light emitting diode display.The present invention solves the problem of luminous aperture opening ratio deficiency and top light emission common electrode poorly conductive at the bottom of prior art.
Description
Technical field
The present invention relates to a kind of organic light emitting diode display and manufacture method thereof.
Background technology
Fig. 1 is the electrical block diagram of existing organic light emitting diode display, in figure, the source electrode 13 connection signal line 1 of the one TFT8, the grid 12 of the one TFT8 connects scan line 3, the drain electrode 14 of the one TFT8 connects the grid 12 of the 2nd TFT9, the source electrode 13 of the 2nd TFT9 connects electric current supply line 2, drain electrode 14 connects organic luminous layer 16, controlled the aperture size of the grid 12 of the 2nd TFT9 by the drain electrode 14 of a TFT8 with the voltage of holding wire 1 varying level, thus control the size of current of the drain electrode 14 of the 2nd TFT9, realize the display of different brightness.The structure of current OLED (Organic Light Emitting Diode) is followed successively by transparency electrode, organic luminous layer and common electrode from down to up, wherein transparency electrode is as anode, common electrode is as negative electrode, as being end luminous architecture, because below TFT (thin-film transistor) etc. blocks, have the situation of aperture opening ratio deficiency, as being top luminous architecture, then must using the metal of very thin thickness as common electrode, have the phenomenon causing undercurrent because resistance is higher, two kinds of frameworks all can limit the luminous efficiency of OLED.
Summary of the invention
Goal of the invention: for above-mentioned prior art Problems existing and deficiency, the object of this invention is to provide a kind of organic light emitting diode display and manufacture method thereof, solves the problem of the luminous aperture opening ratio deficiency in the end and top light emission common electrode poorly conductive.
Technical scheme: for achieving the above object, the first technical scheme that the present invention adopts is a kind of organic light emitting diode display, comprising:
Base main body;
Holding wire, is positioned in base main body;
Electric current supply line, is positioned in base main body;
One TFT, a TFT comprise a TFT oxide semiconductor layer, a TFT source electrode, a TFT drain electrode, a TFT grid;
2nd TFT, the 2nd TFT comprise the 2nd TFT oxide semiconductor layer, the 2nd TFT source electrode, the 2nd TFT drain electrode, the 2nd TFT grid;
Common electrode, between the first TFT and the 2nd TFT;
Organic luminous layer, is positioned on common electrode;
Transparency electrode, is positioned on organic luminous layer and transparency electrode is connected to the drain electrode of the 2nd TFT.
Further, a described TFT source electrode and a TFT drain and lay respectively at TFT oxide semiconductor layer both sides, and a TFT source electrode and a TFT drain and a TFT oxide semiconductor layer is structure integrally; Described 2nd TFT source electrode and the 2nd TFT drain and lay respectively at the 2nd TFT oxide semiconductor layer both sides, and the 2nd TFT source electrode and the 2nd TFT drain and the 2nd TFT oxide semiconductor layer is structure integrally.
Further, also comprise: a TFT source connection lines, connect TFT source electrode and a holding wire;
One TFT drain bond wires, connects a TFT drain electrode and the 2nd TFT grid; And
2nd FTF source connection lines, connects the 2nd TFT source electrode and electric current supply line.
The material preferred indium gallium zinc oxide of described oxide semiconductor layer.
For protecting the common electrode at organic luminous layer place; scan line metal can be provided with between described common electrode and organic luminous layer; in order to avoid also etch away common electrode (because organic luminous layer is not yet formed when etching scan line metal, most of region of common electrode upper surface is now exposed) when etching scan line metal.
The second technical scheme that the present invention adopts is a kind of method manufacturing organic light emitting diode display, comprises the steps:
(1) provide a substrate, form holding wire, electric current supply line, common electrode on the substrate, common electrode is between described holding wire and electric current supply line;
(2) a TFT oxide semiconductor layer and the 2nd TFT oxide semiconductor layer is formed on the substrate;
(3) on described holding wire, electric current supply line, common electrode, oxide semiconductor layer, insulating barrier is formed;
(4) on described insulating barrier, form holding wire contact hole, a TFT source contact openings, a TFT drain contact hole, the 2nd TFT source contact openings, the 2nd TFT drain contact hole, common electrode contact hole, electric current supply line contact hole;
(5) adopt the position of chemical mode contact hole that the one TFT oxide semiconductor layer both sides of exposing are exposed and the 2nd TFT oxide semiconductor layer both sides contact hole all to become and there is conductor characteristics and transparent electrode, described in there is conductor characteristics and transparent electrode drains as a TFT source electrode and a TFT and the 2nd TFT source electrode and the 2nd TFT drain;
(6) on the substrate forming above-mentioned pattern, form scan line metal level, this scan line metal level as scan line, the TFT source connection lines connecting a TFT source electrode and holding wire, a TFT grid, the 2nd TFT grid, be connected a TFT and drain and the 2nd TFT source connection lines of a TFT drain bond wires of the 2nd TFT grid, the source electrode being connected the 2nd TFT and electric current supply line;
(7) on the substrate forming above-mentioned pattern, form organic luminous layer, organic luminous layer is positioned on the contact hole of common electrode;
(8) form the transparency electrode covering organic luminous layer and connect the 2nd TFT drain electrode by the 2nd TFT drain contact hole.
The material of described insulating barrier can be the combination of silicon dioxide or silicon nitride or silicon dioxide and silicon nitride.
Further, cover exposed common electrode when forming scan line metal level with scan line metal, in order to avoid also etched away by common electrode when etching and forming scan line.
In described step (8), also comprise: before formation transparency electrode, scan line metal level increases a layer insulating, and form the 2nd TFT drain contact hole on which insulating layer, then make the transparency electrode of covering organic luminous layer and connect the 2nd TFT drain electrode by this drain contact hole.
The chemical mode preferred ion of described step (5) is injected or annealing in process mode.
Beneficial effect: the present invention is using IGZO (steel gallium zinc oxide) as the TFT of organic light emitting diode display, propose one and form common electrode as negative electrode using underlying metal, common electrode forms organic luminous layer, finally cover organic luminous layer as anode using transparency electrode, form the OLED structure that a top is luminous, the problem of the luminous aperture opening ratio deficiency in the end and top light emission common electrode poorly conductive can be improved, thus promote the luminous efficiency of organic light emitting diode display.
Accompanying drawing explanation
Fig. 1 is the electrical block diagram of existing organic light emitting diode display;
Fig. 2 (A) forms the schematic diagram of underlying metal figure for the present invention;
Fig. 2 (B) is the A-A ' profile of Fig. 2 (A);
Fig. 3 (A) forms the schematic diagram of IGZO layer for the present invention;
Fig. 3 (B) is the B-B ' profile of Fig. 3 (A);
Fig. 4 (A) forms the schematic diagram of insulating barrier and contact hole for the present invention;
Fig. 4 (B) is the C-C ' profile of Fig. 4 (A);
Fig. 5 (A) forms the schematic diagram of scan line metal level for the present invention;
Fig. 5 (B) is the D-D ' profile of Fig. 5 (A);
Fig. 6 (A) forms the schematic diagram of organic luminous layer for the present invention;
Fig. 6 (B) is the E-E ' profile of Fig. 6 (A);
Fig. 7 (A) forms the schematic diagram of transparency electrode for the present invention;
Fig. 7 (B) is the F-F ' profile of Fig. 7 (A);
Fig. 8 is the schematic diagram that the present invention increases insulating barrier.
In figure, 1, holding wire, 2, electric current supply line, 5, common electrode, 8, one TFT oxide semiconductor layer, 13, one TFT source electrode, 14, one TFT drain electrode, 12, one TFT grid, 9, 2nd TFT oxide semiconductor layer, 23, 2nd TFT source electrode, 24, 2nd TFT drain electrode, 121, 2nd TFT grid 121, 7, first insulating barrier, 71, second insulating barrier, 10, holding wire contact hole, 11, scan line, 151, one TFT source connection lines 151, 152, 2nd TFT drain bond wires, 153, 2nd TFT source connection lines, 16, organic luminous layer, 17, transparency electrode, 18, one TFT source contact openings, 19, one TFT drain contact hole, 28, 2nd TFT source contact openings, 29, 2nd TFT drain contact hole, 20, common electrode contact hole, 21, electric current supply line contact hole.
Embodiment
Below in conjunction with the drawings and specific embodiments, illustrate the present invention further, these embodiments should be understood only be not used in for illustration of the present invention and limit the scope of the invention, after having read the present invention, the amendment of those skilled in the art to the various equivalent form of value of the present invention has all fallen within the application's claims limited range.
As shown in Fig. 2 to Fig. 8, a kind of organic light emitting diode display of the present invention, comprise base main body (not shown), underlying metal in base main body is as holding wire 1, electric current supply line 2 and common electrode 5, a TFT oxide semiconductor layer 8 on substrate is as the semiconductor layer of a TFT, 2nd TFT oxide semiconductor layer 9 is as the semiconductor layer of the 2nd TFT, organic luminous layer 16 is formed on common electrode 5, one TFT oxide semiconductor layer 8, be positioned at its both sides and a TFT source electrode 13 of integrative-structure and a TFT drain and 14 form a TFT, 2nd TFT oxide semiconductor layer 9, be positioned at its both sides and the 2nd TFT source electrode 23 of integrative-structure and the 2nd TFT drain and 24 form the 2nd TFT, scan line metal 11 is also as connecting a TFT and holding wire 1, the use of the 2nd TFT and electric current supply line 2, transparency electrode 17 is connected to the 2nd TFT drain electrode 24 via the 2nd TFT drain contact hole 19 and covers organic luminous layer 16.For protecting the common electrode 5 at organic luminous layer 16 place, exposed common electrode 5 can be covered when scan line metal procedure with scan line metal.Storage capacitance (not shown) can by being positioned at the upper and lower scan line metal of insulating barrier and common electrode 5 is formed.Second layer insulating barrier 71 can be increased between scan line metal with transparency electrode 17 and make transparency electrode 17 be connected the 2nd TFT by the 2nd TFT drain contact hole 19 and drain 24, so can protect scan line metal and reduce the situation that scan line metal is short-circuited.
Specifically describe below in conjunction with each figure:
As shown in Fig. 2 (A) and Fig. 2 (B), substrate is formed holding wire 1 and the electric current supply line 2 of vertical direction, and holding wire 1 is adjacent with corresponding electric current supply line 2, forms common electrode 5 between holding wire 1 and electric current supply line 2 simultaneously.Here holding wire 1, electric current supply line 2 and common electrode 5 all utilize underlying metal to be formed, and common electrode 5 is as the negative electrode of this organic light emitting diode display.
As shown in Fig. 3 (A) and Fig. 3 (B), substrate forms a TFT oxide semiconductor layer 8 and the 2nd TFT oxide semiconductor layer 9, this oxide is IGZO (indiumgalliumzincoxide, indium gallium zinc oxide).
As shown in Fig. 4 (A) and Fig. 4 (B), at holding wire 1, electric current supply line 2, common electrode 5, one TFT oxide semiconductor layer 8 and the 2nd TFT oxide semiconductor layer 9 form earth silicon material and (is not limited to silicon dioxide, can also be SiOx, the materials such as SiNx, also can be the organic resin material of tool flatness) insulating barrier (protective layer) 7, holding wire contact hole 10 is formed again on insulating barrier 7, one TFT source contact openings 18, one TFT drain contact hole 19, 2nd TFT source contact openings 28, 2nd TFT drain contact hole 29, common electrode contact hole 20, electric current supply line contact hole 21.
Next the TFT oxide semiconductor layer 8 utilizing the mode of ion implantation or annealing to make to expose and the 2nd TFT oxide semiconductor layer 9 conductivity strengthen, make their two ends have conductivity to strengthen and the electrode with transparent characteristic, because TFT oxide semiconductor layer 8 both sides have a TFT source contact openings 18 and a TFT drain contact hole 19, a TFT oxide semiconductor layer 8 is made to form a TFT source electrode 13 in the position of a TFT source contact openings 18 by the mode of ion implantation or annealing, one TFT oxide semiconductor layer 8 forms a TFT drain electrode 14 at a TFT drain contact hole 19, it 14 is all that conductivity strengthens and has the electrode of transparent characteristic that one TFT source electrode 13 and a TFT drain, that is: a TFT source electrode and a TFT drain with a TFT oxide semiconductor layer is structure integrally, equally because the 2nd TFT oxide semiconductor layer 9 both sides have the 2nd TFT source contact openings 28 and the 2nd TFT drain contact hole 29, the 2nd TFT oxide semiconductor layer 9 is made to form the 2nd TFT source electrode 23 in the position of the 2nd TFT source contact openings 28 by the mode of ion implantation or annealing, 2nd TFT oxide semiconductor layer 9 forms a TFT drain electrode 24 at the 2nd TFT drain contact hole 29, it 24 is all that conductivity strengthens and has the electrode of transparent characteristic that 2nd TFT source electrode 23 and the 2nd TFT drain, that is: the 2nd TFT source electrode and the 2nd TFT drain with the 2nd TFT oxide semiconductor layer is structure integrally.
Because the centre of a TFT oxide semiconductor layer 8 and the 2nd TFT oxide semiconductor layer 9 is all semiconductor, drain the 2nd TFT source electrode 23 at the 14, the 2nd TFT oxide semiconductor layer 9 and its two ends and the 2nd TFT of a TFT source electrode 13 at a TFT oxide semiconductor layer 8 and its two ends and a TFT is so made to drain and 24 form open circuit in electricity.
As shown in Fig. 5 (A) and Fig. 5 (B), insulating barrier 7 adopt scan line metal level form scan line 11, a TFT source connection lines 151, a TFT grid 12, a TFT drain bond wires 152, the 2nd TFT grid 121, the 2nd FTF source connection lines 153 of horizontal direction, wherein, one TFT source connection lines 151 connects a TFT source electrode 13 and holding wire 1, one TFT drain bond wires 152 connects a TFT drain electrode 14 and the 2nd TFT grid the 121, two TFT source connection lines 153 connects the 2nd TFT source electrode 23 and electric current supply line 2.
For protection common electrode 5, cover exposed common electrode 5 when forming scan line metal level with scan line metal (not shown), in order to avoid also etched away by common electrode 5 when etching and forming scan line metal.
As shown in Fig. 6 (A) and Fig. 6 (B), common electrode contact hole 20 forms organic luminous layer 16.
As shown in Fig. 7 (A) and Fig. 7 (B), make the transparency electrode 17 covering organic luminous layer 16, this transparency electrode 17 connects the 2nd TFT drain electrode 24 by the 2nd TFT drain contact hole 29, and this transparency electrode 17 is by covering the anode of organic luminous layer 16 as this organic light emitting diode display.
The present invention passes through using the common electrode 5 of underlying metal as negative electrode, common electrode 5 is formed organic luminous layer 16, finally cover organic luminous layer 16 as anode using transparency electrode 17, form the OLED structure of a top luminescence, the problem of the luminous aperture opening ratio deficiency in the end and top light emission common electrode conductivity can be improved.
Due to the protection of the insulating barrier 7 below grid 12; a TFT oxide semiconductor layer 8 immediately below this insulating barrier 7 and the 2nd TFT oxide semiconductor layer 9 owing to making them still keep the attribute of semiconductor by the mode of ion implantation or annealing, TFT source electrode 14/ the 2nd TFT ensureing on the left of it drain 24 and a TFT on the right side of it to drain between 14/ the 2nd TFT source electrode 23 be open circuit in electricity.
Further; as shown in Figure 8; in order to protect scan line metal and reduce the probability be short-circuited; before formation transparency electrode 17; scan line metal level increases a second layer insulating barrier 71; and form the 2nd TFT drain contact hole 29 on this second insulating barrier 71, then make the transparency electrode 17 of covering organic luminous layer 16 and connect the 2nd TFT drain electrode 24 by the 2nd TFT drain contact hole 29.
Claims (3)
1. manufacture a method for organic light emitting diode display, comprise the steps:
(1) provide a substrate, form holding wire, electric current supply line, common electrode on the substrate, common electrode is between described holding wire and electric current supply line;
(2) a TFT oxide semiconductor layer and the 2nd TFT oxide semiconductor layer is formed on the substrate;
(3) on described holding wire, electric current supply line, common electrode, oxide semiconductor layer, insulating barrier is formed;
(4) on described insulating barrier, form holding wire contact hole, a TFT source contact openings, a TFT drain contact hole, the 2nd TFT source contact openings, the 2nd TFT drain contact hole, common electrode contact hole, electric current supply line contact hole;
(5) adopt the position of chemical mode contact hole that the one TFT oxide semiconductor layer both sides of exposing are exposed and the 2nd TFT oxide semiconductor layer both sides contact hole all to become and there is conductor characteristics and transparent electrode, described in there is conductor characteristics and transparent electrode drains as a TFT source electrode and a TFT and the 2nd TFT source electrode and the 2nd TFT drain;
(6) scan line metal level is formed, this scan line metal level as scan line, the TFT source connection lines connecting a TFT source electrode and holding wire, a TFT grid, the 2nd TFT grid, be connected a TFT and drain and the 2nd TFT source connection lines of a TFT drain bond wires of the 2nd TFT grid, the source electrode being connected the 2nd TFT and electric current supply line, and cover exposed common electrode with scan line metal;
(7) form organic luminous layer, organic luminous layer is positioned on the contact hole of common electrode;
(8) form the transparency electrode covering organic luminous layer and connect the 2nd TFT drain electrode by the 2nd TFT drain contact hole; And in described step (8), also comprise: before formation transparency electrode, scan line metal level increases a layer insulating, and form the 2nd TFT drain contact hole on which insulating layer, then make the transparency electrode of covering organic luminous layer and connect the 2nd TFT drain electrode by this drain contact hole.
2. a kind of method manufacturing organic light emitting diode display according to claim 1, is characterized in that: the material of described insulating barrier is the combination of silicon dioxide or silicon nitride or silicon dioxide and silicon nitride.
3. a kind of method manufacturing organic light emitting diode display according to claim 2, is characterized in that: the chemical mode of described step (5) is ion implantation or annealing in process mode.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210171440.4A CN102664187B (en) | 2012-05-29 | 2012-05-29 | Organic light emitting diode display and manufacture method thereof |
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| CN201210171440.4A CN102664187B (en) | 2012-05-29 | 2012-05-29 | Organic light emitting diode display and manufacture method thereof |
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| CN102664187B true CN102664187B (en) | 2016-01-20 |
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| CN102881711B (en) * | 2012-09-25 | 2014-11-12 | 南京中电熊猫液晶显示科技有限公司 | Active organic light emitting diode (OLED) |
| CN106654048B (en) | 2016-12-27 | 2019-01-25 | 武汉华星光电技术有限公司 | Push up light emitting-type OLED display unit, production method and display panel |
| WO2020082390A1 (en) | 2018-10-27 | 2020-04-30 | Huawei Technologies Co., Ltd. | Sensor and display device |
| CN109830191B (en) * | 2019-04-24 | 2019-08-02 | 南京中电熊猫平板显示科技有限公司 | A kind of transfer method of dot structure and micro- light emitting diode |
| CN110853509B (en) * | 2019-10-16 | 2021-04-27 | Tcl华星光电技术有限公司 | Display panel and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1409581A (en) * | 2001-09-28 | 2003-04-09 | 株式会社半导体能源研究所 | Luminous device and its producing method |
| CN101752512A (en) * | 2008-12-01 | 2010-06-23 | 株式会社半导体能源研究所 | Light-emitting element, light-emitting device, lighting device, and electronic device |
| CN101976679A (en) * | 2010-03-11 | 2011-02-16 | 友达光电股份有限公司 | Active matrix organic light emitting diode display with light feedback and compensation |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007125768A1 (en) * | 2006-04-26 | 2007-11-08 | Sharp Kabushiki Kaisha | Organic electroluminescent display and method for fabricating the same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1409581A (en) * | 2001-09-28 | 2003-04-09 | 株式会社半导体能源研究所 | Luminous device and its producing method |
| CN101752512A (en) * | 2008-12-01 | 2010-06-23 | 株式会社半导体能源研究所 | Light-emitting element, light-emitting device, lighting device, and electronic device |
| CN101976679A (en) * | 2010-03-11 | 2011-02-16 | 友达光电股份有限公司 | Active matrix organic light emitting diode display with light feedback and compensation |
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