CN102664187A - Organic light emitting diode display and manufacturing method thereof - Google Patents
Organic light emitting diode display and manufacturing method thereof Download PDFInfo
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- CN102664187A CN102664187A CN2012101714404A CN201210171440A CN102664187A CN 102664187 A CN102664187 A CN 102664187A CN 2012101714404 A CN2012101714404 A CN 2012101714404A CN 201210171440 A CN201210171440 A CN 201210171440A CN 102664187 A CN102664187 A CN 102664187A
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Abstract
The invention discloses an organic light emitting diode display, comprising a substrate main body, a signal line positioned on the substrate main body, a current supply line positioned on the substrate main body, a first TFT (Thin Film Transistor) comprising a first TFT oxide semiconductor layer, a first TFT source electrode, a first TFT drain electrode and a first TFT gate electrode, a second TFT comprising a second TFT oxide semiconductor layer, a second TFT source electrode, a second TFT drain electrode and a second TFT gate electrode, a common electrode positioned between the first TFT and the second TFT, an organic light emitting layer positioned on the common electrode, and a transparent electrode positioned on the organic light emitting layer and electrically connected to the second TFT drain electrode. The invention also discloses a method for manufacturing the organic light emitting diode display. According to the organic light emitting diode display and the manufacturing method thereof, the problems that the aperture ratio is low in bottom-emitting and the conductivity of the common electrode is poor in top-emitting in the prior art can be solved.
Description
Technical field
The present invention relates to a kind of organic light emitting diode display and manufacturing approach thereof.
Background technology
Fig. 1 is the electrical block diagram of existing organic light emitting diode display; Among the figure, the grid 12 that the source electrode 13 of a TFT8 connects holding wire 1, the one TFT8 connects scan line 3; The drain electrode 14 of the one TFT8 connects the grid 12 of the 2nd TFT9; The source electrode 13 of the 2nd TFT9 connects electric current supply line 2, and drain electrode 14 connects organic luminous layer 16, controls the aperture size of the grid 12 of the 2nd TFT9 through the drain electrode 14 of a TFT8 with the voltage of holding wire 1 varying level; Thereby control the size of current of the drain electrode 14 of the 2nd TFT9, realize the demonstration of different brightness.The structure of OLED (Organic Light Emitting Diode) is followed successively by transparency electrode, organic luminous layer and common electrode from down to up at present, and wherein transparency electrode is as anode, and common electrode is as negative electrode; As be the luminous framework in the end, because below TFT (thin-film transistor) etc. block, have the not enough situation of aperture opening ratio; As being the luminous framework in top; Then must have the phenomenon that causes undercurrent because of resistance is higher with thickness metal as thin as a wafer as common electrode, two kinds of frameworks all can limit the luminous efficiency of OLED.
Summary of the invention
Goal of the invention: the problem and shortage to above-mentioned prior art exists, the purpose of this invention is to provide a kind of organic light emitting diode display and manufacturing approach thereof, solve the problem that the luminous aperture opening ratio in the end is not enough and push up luminous common electrode poorly conductive.
Technical scheme: for realizing the foregoing invention purpose, first kind of technical scheme that the present invention adopts is a kind of organic light emitting diode display, comprising:
Base main body;
Holding wire is positioned on the base main body;
Electric current supply line is positioned on the base main body;
The one TFT, a TFT comprise a TFT oxide semiconductor layer, a TFT source electrode, TFT drain electrode, a TFT grid;
The 2nd TFT, the 2nd TFT comprise the 2nd TFT oxide semiconductor layer, the 2nd TFT source electrode, the 2nd TFT drain electrode, the 2nd TFT grid;
Common electrode is between first TFT and the 2nd TFT;
Organic luminous layer is positioned on the common electrode;
Transparency electrode is positioned on the organic luminous layer and transparency electrode is connected to the drain electrode of the 2nd TFT.
Further, a said TFT source electrode and TFT drain electrode lays respectively at TFT oxide semiconductor layer both sides, and a TFT source electrode is the structure of one with a TFT drain electrode and a TFT oxide semiconductor layer; Said the 2nd TFT source electrode and the 2nd TFT drain electrode lays respectively at the 2nd TFT oxide semiconductor layer both sides, and the 2nd TFT source electrode is the structure of one with the 2nd TFT drain electrode and the 2nd TFT oxide semiconductor layer.
Further, also comprise: a TFT source electrode connecting line connects a TFT source electrode and a holding wire;
The one TFT connecting line that drains connects TFT drain electrode and the 2nd TFT grid; And
The 2nd FTF source electrode connecting line connects the 2nd TFT source electrode and electric current supply line.
The preferred indium gallium of the material of said oxide semiconductor layer zinc oxide.
Common electrode for protection organic luminous layer place; Between said common electrode and organic luminous layer, can be provided with the scan line metal; In order to avoid in etching scan line metal, also etch away common electrode (because organic luminous layer does not form as yet in etching scan line metal, most of zone of the common electrode upper surface of this moment exposes).
Second kind of technical scheme that the present invention adopts is a kind of method of making organic light emitting diode display, comprises the steps:
(1) substrate is provided, on said substrate, forms holding wire, electric current supply line, common electrode, common electrode is between said holding wire and electric current supply line;
(2) on said substrate, form a TFT oxide semiconductor layer and the 2nd TFT oxide semiconductor layer;
(3) on said holding wire, electric current supply line, common electrode, oxide semiconductor layer, form insulating barrier;
(4) on said insulating barrier, form holding wire contact hole, a TFT source electrode contact hole, a TFT drain contact hole, the 2nd TFT source electrode contact hole, the 2nd TFT drain contact hole, common electrode contact hole, electric current supply line contact hole;
The contact hole that the one TFT oxide semiconductor layer both sides of (5) adopting chemical mode to make to expose and the position in the 2nd TFT oxide semiconductor layer contact both sides hole all become and have conductor characteristics and transparent electrode, and said have conductor characteristics and transparent electrode and drain as a TFT source electrode and TFT drain electrode and the 2nd TFT source electrode and the 2nd TFT;
(6) form the scan line metal level on the substrate of above-mentioned pattern forming, this scan line metal level as scan line, connect a TFT source electrode and holding wire a TFT source electrode connecting line, a TFT grid, the 2nd TFT grid, is connected a TFT and drains and drain the 2nd TFT source electrode connecting line of connecting line, the source electrode that is connected the 2nd TFT and electric current supply line of a TFT of the 2nd TFT grid;
(7) on the substrate that forms above-mentioned pattern, form organic luminous layer, organic luminous layer is positioned on the contact hole of common electrode;
(8) formation covers the transparency electrode of organic luminous layer and connects the 2nd TFT drain electrode through the 2nd TFT drain contact hole.
The material of said insulating barrier can be the combination of silicon dioxide or silicon nitride or silicon dioxide and silicon nitride.
Further, when forming the scan line metal level, cover exposed common electrode, in order to avoid when etching forms scan line, also common electrode is etched away with the scan line metal.
In the said step (8); Also comprise: before forming transparency electrode; On the scan line metal level, increase by a layer insulating, and on this insulating barrier, form the 2nd TFT drain contact hole, make the transparency electrode that covers organic luminous layer again and connect the 2nd TFT draining through this drain contact hole.
The chemical mode preferred ion of said step (5) is injected or the annealing in process mode.
Beneficial effect: the present invention is with the TFT of IGZO (steel gallium zinc oxide) as organic light emitting diode display; Propose one and form common electrode as negative electrode with underlying metal; On common electrode, form organic luminous layer, cover organic luminous layer as anode with transparency electrode at last, constitute an OLED structure that the top is luminous; Can improve the problem that the luminous aperture opening ratio in the end is not enough and push up luminous common electrode poorly conductive, thereby promote the luminous efficiency of organic light emitting diode display.
Description of drawings
Fig. 1 is the electrical block diagram of existing organic light emitting diode display;
Fig. 2 (A) forms the sketch map of underlying metal figure for the present invention;
Fig. 2 (B) is the A-A ' profile of Fig. 2 (A);
Fig. 3 (A) forms the sketch map of IGZO layer for the present invention;
Fig. 3 (B) is the B-B ' profile of Fig. 3 (A);
Fig. 4 (A) forms the sketch map of insulating barrier and contact hole for the present invention;
Fig. 4 (B) is the C-C ' profile of Fig. 4 (A);
Fig. 5 (A) forms the sketch map of scan line metal level for the present invention;
Fig. 5 (B) is the D-D ' profile of Fig. 5 (A);
Fig. 6 (A) forms the sketch map of organic luminous layer for the present invention;
Fig. 6 (B) is the E-E ' profile of Fig. 6 (A);
Fig. 7 (A) forms the sketch map of transparency electrode for the present invention;
Fig. 7 (B) is the F-F ' profile of Fig. 7 (A);
Fig. 8 increases the sketch map of insulating barrier for the present invention.
Among the figure, 1, holding wire, 2, electric current supply line, 5, common electrode, the 8, the one TFT oxide semiconductor layer; 13, a TFT source electrode, the 14, the one TFT drain electrode, the 12, the one TFT grid, the 9, the 2nd TFT oxide semiconductor layer, the 23, the 2nd TFT source electrode; 24, the 2nd TFT drain electrode, the 121, the 2nd TFT grid 121,7, first insulating barrier, 71, second insulating barrier, 10, the holding wire contact hole; 11, scan line, the 151, the one TFT source electrode connecting line 151,152, the 2nd TFT connecting line that drains, the 153, the 2nd TFT source electrode connecting line; 16, organic luminous layer, 17, transparency electrode, the 18, the one TFT source electrode contact hole, the 19, the one TFT drain contact hole; 28, the 2nd TFT source electrode contact hole, the 29, the 2nd TFT drain contact hole, 20, the common electrode contact hole, 21, the electric current supply line contact hole.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment; Further illustrate the present invention; Should understand these embodiment only be used to the present invention is described and be not used in the restriction scope of the present invention; After having read the present invention, those skilled in the art all fall within the application's accompanying claims institute restricted portion to the modification of the various equivalent form of values of the present invention.
Extremely shown in Figure 8 like Fig. 2; A kind of organic light emitting diode display of the present invention; Comprise base main body (not shown); Underlying metal on the base main body is as holding wire 1, electric current supply line 2 and common electrode 5; TFT oxide semiconductor layer 8 on the substrate is as the semiconductor layer of a TFT, and the 2nd TFT oxide semiconductor layer 9 is as the semiconductor layer of the 2nd TFT, and organic luminous layer 16 forms on common electrode 5; The one TFT oxide semiconductor layer 8, a TFT source electrode 13 that is positioned at its both sides and integrative-structure and TFT drain electrode 14 form a TFT; The 2nd TFT oxide semiconductor layer 9, the 2nd TFT source electrode 23 that is positioned at its both sides and integrative-structure and the 2nd TFT drain electrode 24 form the 2nd TFT, and scan line metal 11 is also as connecting the usefulness of a TFT with holding wire 1, the 2nd TFT and electric current supply line 2, and transparency electrode 17 is connected to the 2nd TFT via the 2nd TFT drain contact hole 19 and drains 24 and cover organic luminous layer 16.Be the common electrode 5 at protection organic luminous layer 16 places, can when the scan line metal procedure, cover exposed common electrode 5 with the scan line metal.Storage capacitance (not shown) can form by being positioned at insulating barrier scan line metal and common electrode 5 up and down.Can increase second layer insulating barrier 71 between scan line metal and the transparency electrode 17 and make transparency electrode 17 be connected the 2nd TFT drain electrode 24, so can protect the scan line metal and reduce the situation that the scan line metal is short-circuited through the 2nd TFT drain contact hole 19.
Specifically describe below in conjunction with each figure:
Shown in Fig. 2 (A) and Fig. 2 (B), on substrate, form the holding wire 1 and electric current supply line 2 of vertical direction, holding wire 1 is adjacent with corresponding electric current supply line 2, between holding wire 1 and electric current supply line 2, forms common electrode 5 simultaneously.Here holding wire 1, electric current supply line 2 and common electrode 5 all utilize underlying metal to form, and common electrode 5 is as the negative electrode of this organic light emitting diode display.
Shown in Fig. 3 (A) and Fig. 3 (B), on substrate, form a TFT oxide semiconductor layer 8 and the 2nd TFT oxide semiconductor layer 9, this oxide is IGZO (indium gallium zinc oxide, an indium gallium zinc oxide).
Shown in Fig. 4 (A) and Fig. 4 (B); On holding wire 1, electric current supply line 2, common electrode 5, a TFT oxide semiconductor layer 8 and the 2nd TFT oxide semiconductor layer 9, form earth silicon material and (be not limited to silicon dioxide; Can also be SiOx; Materials such as SiNx; Also can be the organic resin material of tool flatness) insulating barrier (protective layer) 7, on insulating barrier 7, form holding wire contact hole 10, a TFT source electrode contact hole 18, a TFT drain contact hole 19, the 2nd TFT source electrode contact hole 28, the 2nd TFT drain contact hole 29, common electrode contact hole 20, electric current supply line contact hole 21 again.
Next the mode of utilizing ion to inject or annealing strengthens a TFT oxide semiconductor layer 8 and the 2nd TFT oxide semiconductor layer 9 conductivity exposed; Make their two ends have the electrode that conductivity strengthens and has transparent characteristic; Because a TFT oxide semiconductor layer 8 both sides have a TFT source electrode contact hole 18 and a TFT drain contact hole 19; Inject or the mode of annealing makes the TFT oxide semiconductor layer 8 of winning form a TFT source electrode 13 in the position of a TFT source electrode contact hole 18, a TFT oxide semiconductor layer 8 forms TFT drain electrode 14 at a TFT drain contact hole 19 through ion; The one TFT source electrode 13 and TFT drain electrode 14 all are the electrodes that conductivity strengthens and has transparent characteristic, that is: a TFT source electrode and TFT drain electrode is the structure of one with a TFT oxide semiconductor layer; It is same because the 2nd TFT oxide semiconductor layer 9 both sides have the 2nd TFT source electrode contact hole 28 and the 2nd TFT drain contact hole 29; Inject or the mode of annealing makes the 2nd TFT oxide semiconductor layer 9 form the 2nd TFT source electrode 23 in the position of the 2nd TFT source electrode contact hole 28, the 2nd TFT oxide semiconductor layer 9 forms TFT drain electrode 24 at the 2nd TFT drain contact hole 29 through ion; The 2nd TFT source electrode 23 and the 2nd TFT drain electrode 24 all are the electrodes that conductivity strengthens and has transparent characteristic, that is: the 2nd TFT source electrode and the 2nd TFT drain electrode is the structure of one with the 2nd TFT oxide semiconductor layer.
Because the centre of a TFT oxide semiconductor layer 8 and the 2nd TFT oxide semiconductor layer 9 all is a semiconductor, make the TFT oxide semiconductor layer 8 of winning form opening circuit on the electricity so with a TFT source electrode 13 at its two ends and the 2nd TFT source electrode 23 and the 2nd TFT drain electrode 24 at TFT drain electrode the 14, the 2nd TFT oxide semiconductor layer 9 and its two ends.
Shown in Fig. 5 (A) and Fig. 5 (B); On insulating barrier 7, adopt the scan line metal level to form scan line 11, a TFT source electrode connecting line 151, a TFT grid 12, TFT drain electrode connecting line 152, the 2nd TFT grid 121, the 2nd FTF source electrode connecting line 153 of horizontal direction; Wherein, The one TFT source electrode connecting line 151 connects a TFT source electrode 13 and holding wire 1; The one TFT drain electrode connecting line 152 connects TFT drain electrode the 14 and the 2nd TFT grid 121, the two TFT source electrode connecting lines 153 and connects the 2nd TFT source electrode 23 and electric current supply line 2.
For protection common electrode 5, when forming the scan line metal level, cover exposed common electrode 5, in order to avoid when etching forms the scan line metal, also common electrode 5 is etched away with scan line metal (not shown).
Shown in Fig. 6 (A) and Fig. 6 (B), on common electrode contact hole 20, form organic luminous layer 16.
Shown in Fig. 7 (A) and Fig. 7 (B); Make the transparency electrode 17 that covers organic luminous layer 16; This transparency electrode 17 connects the 2nd TFT drain electrode 24 through the 2nd TFT drain contact hole 29, and this transparency electrode 17 is through covering the anode of organic luminous layer 16 as this organic light emitting diode display.
The present invention through with the common electrode 5 of underlying metal as negative electrode; On common electrode 5, form organic luminous layer 16; Cover organic luminous layer 16 as anode with transparency electrode 17 at last; Constitute an OLED structure that the top is luminous, can improve the problem that the luminous aperture opening ratio in the end is not enough and push up luminous common electrode conductivity.
Because the protection of the insulating barrier 7 of grid 12 belows; TFT oxide semiconductor layer 8 under this insulating barrier 7 and the 2nd TFT oxide semiconductor layer 9 be owing to inject or the mode of annealing makes them still keep semi-conductive attribute through ion, and it is opening circuit on the electricity that a TFT who guarantees a TFT source electrode 14/ the 2nd TFT drain electrode 24 and its right side in its left side drains between 14/ the 2nd TFT source electrode 23.
Further; As shown in Figure 8; For the probability of protecting scan line metal and reduction to be short-circuited, before forming transparency electrode 17, on the scan line metal level, increase by a second layer insulating barrier 71; And on this second insulating barrier 71, form the 2nd TFT drain contact hole 29, make the transparency electrode 17 that covers organic luminous layer 16 again and also connect the 2nd TFT drain electrode 24 through the 2nd TFT drain contact hole 29.
Claims (10)
1. organic light emitting diode display comprises:
Base main body;
Holding wire is positioned on the base main body;
Electric current supply line is positioned on the base main body;
The one TFT, a TFT comprise a TFT oxide semiconductor layer, a TFT source electrode, TFT drain electrode, a TFT grid;
The 2nd TFT, the 2nd TFT comprise the 2nd TFT oxide semiconductor layer, the 2nd TFT source electrode, the 2nd TFT drain electrode, the 2nd TFT grid;
Common electrode is between first TFT and the 2nd TFT;
Organic luminous layer is positioned on the common electrode;
Transparency electrode is positioned on the organic luminous layer and transparency electrode is connected to the drain electrode of the 2nd TFT.
2. according to the said organic light emitting diode display of claim 1; It is characterized in that: a said TFT source electrode and TFT drain electrode lays respectively at TFT oxide semiconductor layer both sides, and a TFT source electrode is the structure of one with a TFT drain electrode and a TFT oxide semiconductor layer; Said the 2nd TFT source electrode and the 2nd TFT drain electrode lays respectively at the 2nd TFT oxide semiconductor layer both sides, and the 2nd TFT source electrode is the structure of one with the 2nd TFT drain electrode and the 2nd TFT oxide semiconductor layer.
3. according to claim 1 or 2 said organic light emitting diode display, it is characterized in that: also comprise:
The one TFT source electrode connecting line connects a TFT source electrode and a holding wire;
The one TFT connecting line that drains connects TFT drain electrode and the 2nd TFT grid; And
The 2nd FTF source electrode connecting line connects the 2nd TFT source electrode and electric current supply line.
4. according to the said organic light emitting diode display of claim 1, it is characterized in that: the material of said oxide semiconductor layer is an indium gallium zinc oxide.
5. according to the said organic light emitting diode display of claim 1, it is characterized in that: between said common electrode and organic luminous layer, be provided with the scan line metal.
6. a method of making organic light emitting diode display comprises the steps:
(1) substrate is provided, on said substrate, forms holding wire, electric current supply line, common electrode, common electrode is between said holding wire and electric current supply line;
(2) on said substrate, form a TFT oxide semiconductor layer and the 2nd TFT oxide semiconductor layer;
(3) on said holding wire, electric current supply line, common electrode, oxide semiconductor layer, form insulating barrier;
(4) on said insulating barrier, form holding wire contact hole, a TFT source electrode contact hole, a TFT drain contact hole, the 2nd TFT source electrode contact hole, the 2nd TFT drain contact hole, common electrode contact hole, electric current supply line contact hole;
The contact hole that the one TFT oxide semiconductor layer both sides of (5) adopting chemical mode to make to expose and the position in the 2nd TFT oxide semiconductor layer contact both sides hole all become and have conductor characteristics and transparent electrode, and said have conductor characteristics and transparent electrode and drain as a TFT source electrode and TFT drain electrode and the 2nd TFT source electrode and the 2nd TFT;
(6) form the scan line metal level on the substrate of above-mentioned pattern forming, this scan line metal level as scan line, connect a TFT source electrode and holding wire a TFT source electrode connecting line, a TFT grid, the 2nd TFT grid, is connected a TFT and drains and drain the 2nd TFT source electrode connecting line of connecting line, the source electrode that is connected the 2nd TFT and electric current supply line of a TFT of the 2nd TFT grid;
(7) on the substrate that forms above-mentioned pattern, form organic luminous layer, organic luminous layer is positioned on the contact hole of common electrode;
(8) formation covers the transparency electrode of organic luminous layer and connects the 2nd TFT drain electrode through the 2nd TFT drain contact hole.
7. according to the said a kind of method of making organic light emitting diode display of claim 6, it is characterized in that: the material of said insulating barrier is the combination of silicon dioxide or silicon nitride or silicon dioxide and silicon nitride.
8. according to the said a kind of method of making organic light emitting diode display of claim 6, it is characterized in that: when forming the scan line metal level, cover exposed common electrode with the scan line metal.
9. according to the said a kind of method of making organic light emitting diode display of claim 6; It is characterized in that: in the said step (8); Also comprise: before forming transparency electrode; On the scan line metal level, increase by a layer insulating, and on this insulating barrier, form the 2nd TFT drain contact hole, make the transparency electrode that covers organic luminous layer again and connect the 2nd TFT draining through this drain contact hole.
10. according to the said a kind of method of making organic light emitting diode display of claim 6, it is characterized in that: the chemical mode of said step (5) is that ion injects or the annealing in process mode.
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| CN201210171440.4A CN102664187B (en) | 2012-05-29 | 2012-05-29 | Organic light emitting diode display and manufacture method thereof |
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| CN201210171440.4A CN102664187B (en) | 2012-05-29 | 2012-05-29 | Organic light emitting diode display and manufacture method thereof |
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| CN102881711A (en) * | 2012-09-25 | 2013-01-16 | 南京中电熊猫液晶显示科技有限公司 | Active organic light emitting diode (OLED) |
| CN106654048A (en) * | 2016-12-27 | 2017-05-10 | 武汉华星光电技术有限公司 | Top light-emitting OLED display unit, manufacturing method thereof and display panel |
| CN109830191A (en) * | 2019-04-24 | 2019-05-31 | 南京中电熊猫平板显示科技有限公司 | A kind of transfer method of dot structure and micro- light emitting diode |
| WO2021072924A1 (en) * | 2019-10-16 | 2021-04-22 | Tcl华星光电技术有限公司 | Display panel and method for manufacturing same |
| CN112868223A (en) * | 2018-10-27 | 2021-05-28 | 华为技术有限公司 | Sensor and display device |
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| CN112868223B (en) * | 2018-10-27 | 2022-06-10 | 华为技术有限公司 | Sensor and display device |
| US11594161B2 (en) | 2018-10-27 | 2023-02-28 | Huawei Technologies Co., Ltd. | Sensor and display device |
| CN109830191A (en) * | 2019-04-24 | 2019-05-31 | 南京中电熊猫平板显示科技有限公司 | A kind of transfer method of dot structure and micro- light emitting diode |
| WO2021072924A1 (en) * | 2019-10-16 | 2021-04-22 | Tcl华星光电技术有限公司 | Display panel and method for manufacturing same |
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