CN104716166A - Organic lighting display device and manufacturing method thereof - Google Patents
Organic lighting display device and manufacturing method thereof Download PDFInfo
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- CN104716166A CN104716166A CN201510149099.6A CN201510149099A CN104716166A CN 104716166 A CN104716166 A CN 104716166A CN 201510149099 A CN201510149099 A CN 201510149099A CN 104716166 A CN104716166 A CN 104716166A
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Abstract
The embodiment of the invention discloses an organic lighting display device and a manufacturing method thereof. The display device comprises a first base plate, a thin film transistor (TFT) positioned on the surface of the first base plate, a flattening layer and a lighting unit, wherein the TFT comprises a grid electrode, an active layer and a drain electrode; the drain electrode is connected with the active layer; the flattening layer provided with a first etching hole covers one side, far away from the first base plate, of the TFT; the first etching hole completely passes through the flattening layer and extends to the surface of the active layer; the lighting unit is arranged at one side, far away from the TFT, of the flattening layer and comprises a first driving electrode, a second driving electrode and a lighting layer; the first driving electrode and the second driving electrode are oppositely arranged; the lighting layer is positioned between the first driving electrode and the second driving electrode; the first driving electrode is positioned on the surface of the flattening layer and in the first etching hole to be connected with the active layer. With the adoption of the device, stray capacitance in each TFT source electrode area can be reduced, and therefore, the power consumption can be reduced.
Description
Technical field
The present invention relates to organic light emitting display technical field, particularly relate to a kind of organic light-emitting display device and preparation method thereof.
Background technology
Organic light emission of the prior art (Organic Light-Emitting Diode, be called for short OLED) in display unit, its each luminescence unit is by TFT (Thin Film Transistor, thin-film transistor) control, by conducting and the cut-off of the TFT of its correspondence, whether control the work of each luminescence unit.Concrete, as shown in Figure 1, described TFT generally includes: grid 01, source electrode 02 and drain electrode 03, wherein, described source electrode 02 and drain electrode 03 are positioned at same layer, be connected by active layer 04, described grid 01 and described source electrode 02, drain electrode 03 is positioned at different layers, and between described grid 01 and described active layer 04, there is gate insulation layer 05, operationally, the source electrode of described TFT is electrically connected with the drive electrode 06 of described luminescence unit, drain electrode 03 is electrically connected with the data wire (not shown) in described OLED display, grid 01 is electrically connected with the scan line (not shown) in described OLED display, by conducting and the cut-off of TFT described in the signal controlling transmitted in described scan line.When described TFT conducting, described TFT drain electrode receives the data-signal in coupled data wire, and transfers to the source electrode of described TFT, then is transferred to the drive electrode of luminescence unit by the source electrode of described TFT, controls described luminescence unit work.
But in above-mentioned OLED display, the parasitic capacitance of each TFT source region is comparatively large, causes the power consumption of described OLED display larger.
Summary of the invention
For solving the problems of the technologies described above, embodiments provide a kind of organic light-emitting display device and preparation method thereof, to reduce in described organic light-emitting display device, the parasitic capacitance of each TFT source region, reduces the power consumption of described organic light-emitting display device.
For solving the problem, embodiments provide following technical scheme:
A kind of organic light-emitting display device, comprising: first substrate; Be positioned at the thin-film transistor on described first substrate surface, described thin-film transistor comprises: grid, active layer and drain electrode, and wherein, described drain electrode is connected with described active layer; Be positioned at the side that described thin-film transistor deviates from described first substrate, be coated with planarization layer, described planarization layer has the first etched hole, and described first etched hole runs through described planarization layer completely, extends to the surface of described active layer; Be positioned at the luminescence unit that described planarization layer deviates from described thin-film transistor side, described luminescence unit comprises: the first drive electrode be oppositely arranged and the second drive electrode, and the luminescent layer between described first drive electrode and the second drive electrode, wherein, described first drive electrode is positioned at described planarization layer surface and described first etched hole, is connected with described active layer.
Optionally, described thin-film transistor comprises: the grid being positioned at described first substrate surface; Be positioned at the gate insulation layer that described grid deviates from described first substrate one side surface, described gate insulation layer covers described grid and described first substrate; Be positioned at the active layer that described gate insulation layer deviates from described grid one side surface; Be positioned at the etching barrier layer that described active layer deviates from described gate insulation layer one side surface, described etching barrier layer has the second etched hole; Be positioned at the drain electrode that described etching barrier layer deviates from described active layer one side surface and described second etched hole, described drain electrode is connected with described active layer.
Optionally, described thin-film transistor comprises: be positioned at the interlayer insulating film that grid deviates from described gate insulation layer side, interlayer insulating film has the second etched hole, and the second etched hole runs through described interlayer insulating film and described gate insulation layer completely, extends to the surface of described active layer; Be positioned at the drain electrode that interlayer insulating film deviates from described gate insulation layer one side surface and the second etched hole, draining is connected with described active layer.
Optionally, also passivation layer is formed with between described planarization layer and described thin-film transistor.
Optionally, described first drive electrode is male or female.
Optionally, described first drive electrode comprises: the first transparent electrode layer be oppositely arranged and the second transparent electrode layer, and the metal electrode layer between described first transparent electrode layer and the second transparent electrode layer.
Optionally, described active layer is oxide semiconductor layer.
A manufacture method for organic light-emitting display device, comprising: provide first substrate; Form thin-film transistor on described first substrate surface, described thin-film transistor comprises: grid, active layer and drain electrode, and wherein, described drain electrode is connected with described active layer; Deviate from described first substrate side at described thin-film transistor and form planarization layer, described planarization layer covers described thin-film transistor; Etch described planarization layer, form the first etched hole in described planarization layer, described first etched hole runs through described planarization layer completely, extends to the surface of described active layer; The side deviating from described thin-film transistor at described planarization layer forms luminescence unit, described luminescence unit comprises: the first drive electrode be oppositely arranged and the second drive electrode, and the luminescent layer between described first drive electrode and the second drive electrode, wherein, described first drive electrode is positioned at described planarization layer surface and described first etched hole, is connected with described active layer.
Optionally, form thin-film transistor on described first substrate surface to comprise: form grid on described first substrate surface; Deviate from described first substrate one side surface at described grid and form gate insulation layer, described gate insulation layer covers described grid and described first substrate; Deviate from described grid one side surface at described gate insulation layer and be formed with active layer; Deviate from described gate insulation layer one side surface at described active layer and form etching barrier layer; Etch described etching barrier layer, form the second etched hole in described etching barrier layer, described second etched hole runs through described etching barrier layer, extends to described active layer surface; Deviate from described active layer one side surface and described second etched hole at described etching barrier layer and form drain electrode, described drain electrode is connected with described active layer.
Optionally, form thin-film transistor on described first substrate surface to comprise: form resilient coating on described first substrate surface; Deviate from described first substrate one side surface at described resilient coating and be formed with active layer; Deviate from described resilient coating one side surface at described active layer and form gate insulation layer; Deviate from described active layer one side surface at described gate insulation layer and form grid; Deviate from gate insulation layer one side surface at grid and form interlayer insulating film; Etch interlayer insulating film and gate insulation layer, form the second etched hole in interlayer insulating film and gate insulation layer, the second etched hole runs through described interlayer insulating film and gate insulation layer completely, extends to the surface of described active layer; Deviate from gate insulation layer one side surface and the second etched hole at interlayer insulating film and form drain electrode, draining is connected with active layer.
Compared with prior art, technique scheme has the following advantages:
The organic light-emitting display device that the embodiment of the present invention provides comprises: thin-film transistor, luminescence unit and the planarization layer between described thin-film transistor and luminescence unit, wherein, described thin-film transistor comprises grid, active layer and drain electrode, and described drain electrode is connected with described active layer, described planarization layer has the first etched hole, described first etched hole runs through described planarization layer completely, extend to the surface of described active layer, described luminescence unit comprises the first drive electrode, second drive electrode and luminescent layer, wherein, described first drive electrode is positioned at described planarization layer surface and described first etched hole, be connected with described active layer.
As can be seen here, in the organic light-emitting display device that the embodiment of the present invention provides, described thin-film transistor does not comprise source electrode, the first drive electrode in described luminescence unit is directly connected with the active layer of described thin-film transistor, namely the effect of drive electrode in the existing luminescence unit of the first drive electrode in described luminescence unit, there is again the effect of source electrode in thin-film transistor, distance in the organic light-emitting display device that the embodiment of the present invention is provided between the first etched hole peripheral region active layer and the first drive electrode is greater than the distance between etched hole peripheral region active layer corresponding to source electrode in prior art organic light-emitting display device and source electrode, thus greatly reduce the parasitic capacitance of described first etched hole peripheral region, and then reduce in described organic light-emitting display device, the parasitic capacitance of each TFT source region, eventually reduce the power consumption of described organic light-emitting display device.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of organic display device in prior art;
The structural representation of the organic display device that Fig. 2 provides for one embodiment of the invention;
The structural representation of the organic display device that Fig. 3 provides for one embodiment of the invention;
The schematic flow sheet of the manufacture method of the organic display device that Fig. 4-Fig. 6 provides for one embodiment of the invention;
What Fig. 7 provided for one embodiment of the invention has in the manufacture method of pole display unit, the manufacture method schematic flow sheet of thin-film transistor;
What Fig. 8-Figure 10 provided for one embodiment of the invention has in the manufacture method of pole display unit, the manufacture method schematic flow sheet of thin-film transistor.
Embodiment
Just as described in the background section, in prior art, in OLED display, the parasitic capacitance of each TFT source region is comparatively large, causes the power consumption of described OLED display larger.
In view of this, embodiments provide a kind of organic light-emitting display device, comprising:
First substrate;
Be positioned at the thin-film transistor on described first substrate surface, described thin-film transistor comprises: grid, active layer and drain electrode, and wherein, described drain electrode is connected with described active layer;
Be positioned at described thin-film transistor and deviate from described first substrate side, be coated with planarization layer, described planarization layer has the first etched hole, and described first etched hole runs through described planarization layer completely, extends to the surface of described active layer;
Be positioned at the luminescence unit that described planarization layer deviates from described thin-film transistor side, described luminescence unit comprises: the first drive electrode be oppositely arranged and the second drive electrode, and the luminescent layer between described first drive electrode and the second drive electrode, wherein, described first drive electrode is positioned at described planarization layer surface and described first etched hole, is connected with described active layer.
Accordingly, the embodiment of the present invention additionally provides a kind of manufacture method of organic light-emitting display device, comprising:
First substrate is provided;
Form thin-film transistor on described first substrate surface, described thin-film transistor comprises: grid, active layer and drain electrode, and wherein, described drain electrode is connected with described active layer;
Deviate from described first substrate side at described thin-film transistor and form planarization layer, described planarization layer covers described thin-film transistor;
Etch described planarization layer, form the first etched hole in described planarization layer, described first etched hole runs through described planarization layer completely, extends to the surface of described active layer;
The side deviating from described thin-film transistor at described planarization layer forms luminescence unit, described luminescence unit comprises: the first drive electrode be oppositely arranged and the second drive electrode, and the luminescent layer between described first drive electrode and the second drive electrode, wherein, described first drive electrode is positioned at described planarization layer surface and described first etched hole, is connected with described active layer.
In organic light-emitting display device that the embodiment of the present invention provides and preparation method thereof, described thin-film transistor does not comprise source electrode, the first drive electrode in described luminescence unit is directly connected with the active layer of described thin-film transistor, namely the effect of drive electrode in the existing luminescence unit of the first drive electrode in described luminescence unit, there is again the effect of source electrode in thin-film transistor, distance in the organic light-emitting display device that the embodiment of the present invention is provided between the first etched hole peripheral region active layer and the first drive electrode is greater than the distance between etched hole peripheral region active layer corresponding to source electrode in prior art organic light-emitting display device and source electrode, thus greatly reduce the parasitic capacitance of described first etched hole peripheral region, and then reduce in described organic light-emitting display device, the parasitic capacitance of each TFT source region, eventually reduce the power consumption of described organic light-emitting display device.
It is more than the core concept of the application, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when describing the embodiment of the present invention in detail; for ease of explanation; represent that the profile of device architecture can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, it should not limit the scope of protection of the invention at this.In addition, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.
As shown in Figure 2, embodiments provide a kind of organic light-emitting display device, comprising:
First substrate 10;
Be positioned at the thin-film transistor on described first substrate 10 surface, described thin-film transistor comprises: grid 20, active layer 30 and drain electrode 40, and wherein, described drain electrode 40 is connected with described active layer 30;
Be positioned at described thin-film transistor and deviate from described first substrate 10 side, be coated with planarization layer 50, described planarization layer 50 has the first etched hole (not shown), and described first etched hole runs through described planarization layer 50 completely, extends to the surface of described active layer 30;
Be positioned at the luminescence unit that described planarization layer 50 deviates from described thin-film transistor side, described luminescence unit comprises: the first drive electrode 60 and the second drive electrode (not shown) be oppositely arranged, and the luminescent layer (not shown) between described first drive electrode 60 and the second drive electrode, wherein, described first drive electrode 60 is positioned at described planarization layer 50 surface and described first etched hole, is connected with described active layer 30.Described first drive electrode 60 can be anode, is arranged on the top of planarization layer 50, and alternatively, the first drive electrode 60 is integrative-structures, is formed by an etching technics.
In embodiments of the present invention, etching barrier layer 70 is only had between the drain electrode 40 of described thin-film transistor and described active layer 30, near described thin-film transistor source region (i.e. described first etched hole peripheral region), etching barrier layer 7 is not only had between described first drive electrode 60 and described active layer 30, also has planarization layer 50, and the dielectric constant of described planarization layer 50 is very little, thus in the organic light-emitting display device that the embodiment of the present invention is provided, distance between first etched hole peripheral region active layer 30 and the first drive electrode 60 is greater than the distance between etched hole peripheral region active layer corresponding to source electrode in prior art organic light-emitting display device and source electrode, greatly reduce the parasitic capacitance of described first etched hole peripheral region, and then reduce in described organic light-emitting display device, the parasitic capacitance of each TFT source region, eventually reduce the power consumption of described organic light-emitting display device.
On the basis of above-described embodiment, in one embodiment of the invention, described organic light-emitting display device is bottom grating structure, and as shown in Figure 2, in the present embodiment, described thin-film transistor comprises: the grid 20 being positioned at described first substrate 10 surface; Be positioned at the gate insulation layer 80 that described grid 20 deviates from described first substrate 10 1 side surface, described gate insulation layer 80 covers described grid 20 and described first substrate 10; Be positioned at the active layer 30 that described gate insulation layer 80 deviates from described grid 20 1 side surface; Be positioned at the etching barrier layer 70 that described active layer 30 deviates from described gate insulation layer 80 1 side surface, there is in described etching barrier layer 70 second etched hole (not shown); Be positioned at the drain electrode 40 that described etching barrier layer 70 deviates from described active layer 30 1 side surface and described second etched hole, described drain electrode 40 is connected with described active layer 30.
In another embodiment of the present invention, described organic light-emitting display device is top gate structure, and as shown in Figure 3, in the present embodiment, described thin-film transistor comprises: the resilient coating 90 being positioned at described first substrate 10 surface; Be positioned at the active layer 30 that described resilient coating 90 deviates from described first substrate 10 1 side surface; Be positioned at the gate insulation layer 80 that described active layer 30 deviates from described resilient coating 90 1 side surface; Be positioned at the grid 20 that described gate insulation layer 80 deviates from described active layer 30 1 side surface; Be positioned at the interlayer insulating film 701 that described grid 20 deviates from described gate insulation layer 80 side, there is in described interlayer insulating film 701 second etched hole (not shown), described second etched hole runs through described interlayer insulating film 701 and described gate insulation layer 80 completely, extends to the surface of described active layer 30; Be positioned at the drain electrode 40 that described interlayer insulating film 701 deviates from described gate insulation layer 80 1 side surface and the second etched hole, described drain electrode 40 is connected with described active layer 3.Alternatively, the interlayer insulating film 701 in the present embodiment is identical with the etching barrier layer materials of other embodiment, and due in top gate structure, this layer does not play etch stopper, therefore is called interlayer insulating film.
On the basis of above-mentioned any embodiment, in embodiments of the present invention, described grid 20 is under the driving of extraneous gate drive signal, control the turn-on and turn-off of described thin-film transistor, when described grid 20 controls described thin-film transistor conducting, the conducting of described active layer 30, described drain electrode 40 is electrically connected with described first drive electrode 60, data drive signal is transferred to described first drive electrode 60, controls described luminescence unit luminous, complete display.
Preferably, the making material of described grid 20 can be metal, and can be also semiconductor, the present invention limit this, as long as it has good conductivity; The making material of described active layer 30 can be amorphous silicon, polysilicon or oxide semiconductor layer, and the present invention does not also limit this, specifically depends on the circumstances.
It should be noted that, in embodiments of the present invention, described drain electrode 40 is not positioned at same layer with described first drive electrode 60, thus can in described organic light-emitting display device manufacturing process, after having made thin-film transistor, before making the first drive electrode 60, described planarization layer 50 is utilized to protect described drain electrode 40, weaken the structure after completing to thin-film transistor to carry out the electrostatic phenomenon produced in technical process such as cleaning, and then avoid electrostatic phenomenon between described drain electrode 40 and described grid 20 too serious, described active layer 30 is caused to puncture, cause described film crystal tube failure.
Also it should be noted that, in embodiments of the present invention, during according to described thin-film transistor conducting, the flow direction of electric current, the side that described first drive electrode and described active layer directly contact is defined as source electrode, opposite side is defined as drain electrode, but the present invention does not limit this, in other embodiments of the present invention, also the side that described first drive electrode and described active layer directly contact can be defined as drain electrode, opposite side is defined as source electrode, and the present invention does not limit this, specifically depends on the circumstances.
On the basis of above-mentioned any embodiment, in one embodiment of the invention, passivation layer 100 is also formed with between described planarization layer 50 and described thin-film transistor.As can be seen here, in the present embodiment, near being positioned at described thin-film transistor source region, (i.e. described first etched hole peripheral region) not only has etching barrier layer 70 between described first drive electrode 60 and described active layer 30, planarization layer 50, also has passivation layer 100, thus the distance further increased between the first etched hole peripheral region active layer 30 and the first drive electrode 60, namely reduce further the parasitic capacitance of described first etched hole peripheral region, and then reduce in described organic light-emitting display device, the parasitic capacitance of each TFT source region, eventually reduce the power consumption of described organic light-emitting display device.Alternatively, the first etched hole runs through planarization layer 50, etching barrier layer 70 and passivation layer 100.
On the basis of above-mentioned any embodiment, in one embodiment of the invention, described first drive electrode 60 is the anode of described luminescence unit, and described second drive electrode is the negative electrode of described luminescence unit; In another embodiment of the present invention, described first drive electrode 60 is the negative electrode of described luminescence unit, and described second drive electrode is the anode of described luminescence unit, and the present invention does not limit this, specifically depends on the circumstances.Be the anode of described luminescence unit below with described first drive electrode 60, described second drive electrode is the negative electrode of described luminescence unit is example, is described in detail to the organic light-emitting display device that the embodiment of the present invention provides.
On the basis of above-described embodiment, in one embodiment of the invention, described first drive electrode comprises: the first transparent electrode layer and the metal electrode layer being positioned at described first transparent electrode layer surface, wherein, described first transparent electrode layer between described metal electrode layer and described planarization layer, to improve the contact performance of described first drive electrode and described planarization layer.
In another embodiment of the present invention, described first drive electrode comprises: metal electrode layer and the second transparent electrode layer being positioned at described metal electrode layer surface, wherein, described second transparent electrode layer is between described luminescent layer and described metal electrode layer, match to make the work function of described first drive electrode and described luminescent layer, to improve the Hole injection capacity of described first drive electrode, thus improve the luminous efficiency of described organic light-emitting display device.
In yet another embodiment of the present invention, described first drive electrode comprises: the first transparent electrode layer be oppositely arranged and the second transparent electrode layer, and the metal electrode layer between described first transparent electrode layer and the second transparent electrode layer.Wherein, described first transparent electrode layer is between described planarization layer and described metal electrode layer, to improve the contact performance of described first drive electrode and described planarization layer, described second transparent electrode layer, between described luminescent layer and described metal electrode layer, matches to make the work function of described first drive electrode and described luminescent layer.
On the basis of above-mentioned any embodiment, in an alternate embodiment of the present invention where, described metal electrode layer is preferably silver electrode layer, and described first transparent electrode layer and the second transparent electrode layer are preferably ITO electrode layer, but the present invention does not limit this, specifically depend on the circumstances.
On the basis of above-mentioned any embodiment, in one embodiment of the invention, described active layer 30 can be amorphous silicon, and also can be low temperature polycrystalline silicon, can also be oxide semiconductor layer, the present invention limit this, specifically depends on the circumstances.It should be noted that, when described first drive electrode 60 comprises the first transparent electrode layer, and described first transparent electrode layer is when being ITO layer, described active layer 30 is chosen as oxide semiconductor layer, when directly contacting with described active layer 30 to avoid described first drive electrode 60, described active layer 30 is oxidized by described first drive electrode 60.
In sum, in the organic light-emitting display device that the embodiment of the present invention provides, described thin-film transistor does not comprise source electrode, the first drive electrode 60 in described luminescence unit is directly connected with the active layer 30 of described thin-film transistor, namely the effect of drive electrode in the existing luminescence unit of the first drive electrode 60 in described luminescence unit, there is again the effect of source electrode in thin-film transistor, and the distance in the organic light-emitting display device that the embodiment of the present invention provides between the first etched hole peripheral region active layer 30 and the first drive electrode 60 is greater than the distance between etched hole peripheral region active layer corresponding to source electrode in prior art organic light-emitting display device and source electrode, greatly reduce the parasitic capacitance of described first etched hole peripheral region, thus reduce in described organic light-emitting display device, the parasitic capacitance of each TFT source region, reduce the power consumption of described organic light-emitting display device, improve the compensation effect of described organic light-emitting display device drive circuit.
And, in the organic light-emitting display device that the embodiment of the present invention provides, described drain electrode 40 is not positioned at same layer with described first drive electrode 60, thus can in described organic light-emitting display device manufacturing process, after having made thin-film transistor, before making the first drive electrode 60, described planarization layer 50 is utilized to protect described drain electrode 40, weaken the electrostatic phenomenon that the structure after completing to thin-film transistor carries out producing in cleaning process, and then avoid electrostatic phenomenon between described drain electrode 40 and described grid 20 too serious, described active layer 30 is caused to puncture, cause described film crystal tube failure.
Accordingly, the embodiment of the present invention additionally provides a kind of manufacture method of organic light-emitting display device, comprising:
First substrate 10 is provided;
As shown in Figure 4, form thin-film transistor on described first substrate 10 surface, described thin-film transistor comprises: grid 20, active layer 30 and drain electrode 40, and wherein, described drain electrode 40 is connected with described active layer 30;
As shown in Figure 5, deviate from described first substrate 10 side at described thin-film transistor and form planarization layer 50, described planarization layer 50 covers described thin-film transistor;
Etch described planarization layer 50, form the first etched hole 110 in described planarization layer 50, described first etched hole 110 runs through described planarization layer 50 completely, extends to described active layer 30 surface;
As shown in Figure 6, the side deviating from described thin-film transistor at described planarization layer 50 forms luminescence unit, described luminescence unit comprises: the first drive electrode 60 and the second drive electrode (not shown) be oppositely arranged, and the luminescent layer (not shown) between described first drive electrode 60 and the second drive electrode, wherein, described first drive electrode 60 is positioned at described planarization layer 50 surface and described first etched hole 110, is connected with described active layer 30.
In embodiments of the present invention, etching barrier layer 70 is only had between the drain electrode 40 of described thin-film transistor and described active layer 30, near being positioned at described thin-film transistor source region, (i.e. described first etched hole peripheral region) not only has etching barrier layer 70 between described first drive electrode 60 and described active layer 30, also has planarization layer 50, and the dielectric constant of described planarization layer 50 is very little, thus in the organic light-emitting display device that the embodiment of the present invention is provided, distance between first etched hole peripheral region active layer 30 and the first drive electrode 60 is greater than the distance between etched hole peripheral region active layer corresponding to source electrode in prior art organic light-emitting display device and source electrode, greatly reduce the parasitic capacitance of described first etched hole peripheral region, and then reduce in described organic light-emitting display device, the parasitic capacitance of each TFT source region, eventually reduce the power consumption of described organic light-emitting display device.
On the basis of above-described embodiment, in one embodiment of the invention, described organic light-emitting display device is bottom grating structure, in the present embodiment, forms thin-film transistor comprise on described first substrate 10 surface:
As shown in Figure 7, grid 20 is formed on described first substrate 10 surface;
Deviate from described first substrate 10 1 side surface at described grid 20 and form gate insulation layer 80, described gate insulation layer 80 covers described grid 20 and described first substrate 10;
Deviate from described grid 20 1 side surface at described gate insulation layer 80 and be formed with active layer 30;
Deviate from described gate insulation layer 80 1 side surface at described active layer 30 and form etching barrier layer 70;
Etch described etching barrier layer 70, in described etching barrier layer 70, form the second etched hole 120, described second etched hole 120 runs through described etching barrier layer 70, extends to described active layer 30 surface;
As shown in Figure 4, deviate from described active layer 30 1 side surface and described second etched hole at described etching barrier layer 70 and form drain electrode 40, described drain electrode 40 is connected with described active layer 30.
In another embodiment of the present invention, described organic light-emitting display device is top gate structure, in the present embodiment, forms thin-film transistor comprise on described first substrate 10 surface:
As shown in Figure 8, resilient coating 90 is formed on described first substrate 10 surface;
Deviate from described first substrate 10 1 side surface at described resilient coating 90 and be formed with active layer 30;
Deviate from described resilient coating 90 1 side surface at described active layer 30 and form gate insulation layer 80;
Deviate from described active layer 30 1 side surface at described gate insulation layer 80 and form grid 20;
As shown in Figure 9, deviate from described gate insulation layer 80 1 side surface at described grid 20 and form interlayer insulating film 701;
Etch described interlayer insulating film 701, in described interlayer insulating film 701, form the second etched hole 120, described second etched hole 120 runs through described interlayer insulating film 701 and described gate insulation layer 80 completely, extends to described active layer 30 surface;
As shown in Figure 10, deviate from described gate insulation layer 80 1 side surface and described second etched hole at described etching barrier layer and form drain electrode 40, described drain electrode 40 is connected with described active layer 30.
As from the foregoing, in embodiments of the present invention, formed when described first etched hole is different with the second etched hole, namely in the manufacturing process of described thin-film transistor, when carrying out etching formation the second etched hole to described etching barrier layer 70, not corresponding to described first etched hole etching barrier layer 70 region etches, and to avoid the later stage when etching drain electrode 40 metal level and forming drain metal, causes damage to described active layer 30.
On the basis of above-mentioned any embodiment, as shown in Figures 2 and 3, in one embodiment of the invention, the method also comprises: between described planarization layer 50 and described thin-film transistor, form passivation layer 100, thus the distance further increased between the first etched hole peripheral region active layer 30 and the first drive electrode 60, namely reduce further the parasitic capacitance of described first etched hole peripheral region, and then reduce in described organic light-emitting display device, the parasitic capacitance of each TFT source region, eventually reduces the power consumption of described organic light-emitting display device.
On the basis of above-mentioned any embodiment, in one embodiment of the invention, described first drive electrode 60 is the anode of described luminescence unit, and described second drive electrode is the negative electrode of described luminescence unit; In another embodiment of the present invention, described first drive electrode 60 is the negative electrode of described luminescence unit, and described second drive electrode is the anode of described luminescence unit, and the present invention does not limit this, specifically depends on the circumstances.
In the organic light-emitting display device that the manufacture method utilizing the embodiment of the present invention to provide makes, described thin-film transistor does not comprise source electrode, the first drive electrode 60 in described luminescence unit is directly connected with the active layer 30 of described thin-film transistor, namely the effect of drive electrode in the existing luminescence unit of the first drive electrode 60 in described luminescence unit, there is again the effect of source electrode in thin-film transistor, and the distance in the organic light-emitting display device that the embodiment of the present invention provides between the first etched hole peripheral region active layer 30 and the first drive electrode 6 is greater than the distance between etched hole peripheral region active layer corresponding to source electrode in prior art organic light-emitting display device and source electrode, thus greatly reduce the parasitic capacitance of described first etched hole peripheral region, and then reduce in described organic light-emitting display device, the parasitic capacitance of each TFT source region, eventually reduce the power consumption of described organic light-emitting display device.
And, in the organic light-emitting display device that the embodiment of the present invention provides, described drain electrode 40 is not positioned at same layer with described first drive electrode 60, thus can in described organic light-emitting display device manufacturing process, after having made thin-film transistor, before making the first drive electrode 60, described planarization layer 50 is utilized to protect described drain electrode 40, weaken the electrostatic phenomenon that the structure after completing to thin-film transistor carries out producing in cleaning process, and then avoid electrostatic phenomenon between described drain electrode 40 and described grid 20 too serious, described active layer 30 is caused to puncture, cause described film crystal tube failure.
In this specification, various piece adopts the mode of going forward one by one to describe, and what each some importance illustrated is the difference with other parts, between various piece identical similar portion mutually see.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to embodiment illustrated herein, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. an organic light-emitting display device, is characterized in that, comprising:
First substrate;
Be positioned at the thin-film transistor on described first substrate surface, described thin-film transistor comprises: grid, active layer and drain electrode, and wherein, described drain electrode is connected with described active layer;
Be positioned at the side that described thin-film transistor deviates from described first substrate, be coated with planarization layer, described planarization layer has the first etched hole, and described first etched hole runs through described planarization layer completely, extends to the surface of described active layer;
Be positioned at the luminescence unit that described planarization layer deviates from described thin-film transistor side, described luminescence unit comprises: the first drive electrode be oppositely arranged and the second drive electrode, and the luminescent layer between described first drive electrode and the second drive electrode, wherein, described first drive electrode is positioned at described planarization layer surface and described first etched hole, is connected with described active layer.
2. display unit according to claim 1, is characterized in that, described thin-film transistor comprises:
Be positioned at the grid on described first substrate surface;
Be positioned at the gate insulation layer that described grid deviates from described first substrate one side surface, described gate insulation layer covers described grid and described first substrate;
Active layer, is positioned at described gate insulation layer and deviates from described grid one side surface;
Be positioned at the etching barrier layer that described active layer deviates from described gate insulation layer one side surface, there is in described etching barrier layer the second etched hole;
Be positioned at the drain electrode that described etching barrier layer deviates from described active layer one side surface and described second etched hole, described drain electrode is connected with described active layer.
3. display unit according to claim 1, is characterized in that, described thin-film transistor comprises:
Be positioned at the resilient coating on described first substrate surface;
Be positioned at the active layer that described resilient coating deviates from described first substrate one side surface;
Be positioned at the gate insulation layer that described active layer deviates from described resilient coating one side surface;
Be positioned at the grid that described gate insulation layer deviates from described active layer one side surface;
Be positioned at the interlayer insulating film that described grid deviates from described gate insulation layer side, described interlayer insulating film has the second etched hole, and described second etched hole runs through described interlayer insulating film and described gate insulation layer completely, extends to the surface of described active layer;
Be positioned at the drain electrode that described interlayer insulating film deviates from described gate insulation layer one side surface and the second etched hole, described drain electrode is connected with described active layer.
4. the display unit according to any one of claim 1-3, is characterized in that, is also formed with passivation layer between described planarization layer and described thin-film transistor.
5. display unit according to claim 4, is characterized in that, described first drive electrode is male or female.
6. display unit according to claim 5, it is characterized in that, described first drive electrode comprises: the first transparent electrode layer be oppositely arranged and the second transparent electrode layer, and the metal electrode layer between described first transparent electrode layer and the second transparent electrode layer.
7. display unit according to claim 6, is characterized in that, described active layer is oxide semiconductor layer.
8. a manufacture method for organic light-emitting display device, is characterized in that, comprising:
First substrate is provided;
Form thin-film transistor on described first substrate surface, described thin-film transistor comprises: grid, active layer and drain electrode, and wherein, described drain electrode is connected with described active layer;
Deviate from described first substrate side at described thin-film transistor and form planarization layer, described planarization layer covers described thin-film transistor;
Etch described planarization layer, form the first etched hole in described planarization layer, described first etched hole runs through described planarization layer completely, extends to the surface of described active layer;
The side deviating from described thin-film transistor at described planarization layer forms luminescence unit, described luminescence unit comprises: the first drive electrode be oppositely arranged and the second drive electrode, and the luminescent layer between described first drive electrode and the second drive electrode, wherein, described first drive electrode is positioned at described planarization layer surface and described first etched hole, is connected with described active layer.
9. manufacture method according to claim 8, is characterized in that, forms thin-film transistor comprise on described first substrate surface:
Grid is formed on described first substrate surface;
Deviate from described first substrate one side surface at described grid and form gate insulation layer, described gate insulation layer covers described grid and described first substrate;
Deviate from described grid one side surface at described gate insulation layer and be formed with active layer;
Deviate from described gate insulation layer one side surface at described active layer and form etching barrier layer;
Etch described etching barrier layer, form the second etched hole in described etching barrier layer, described second etched hole runs through described etching barrier layer, extends to the surface of described active layer;
Deviate from described active layer one side surface and described second etched hole at described etching barrier layer and form drain electrode, described drain electrode is connected with described active layer.
10. manufacture method according to claim 8, is characterized in that, forms thin-film transistor comprise on described first substrate surface:
Resilient coating is formed on described first substrate surface;
Deviate from described first substrate one side surface at described resilient coating and be formed with active layer;
Deviate from described resilient coating one side surface at described active layer and form gate insulation layer;
Deviate from described active layer one side surface at described gate insulation layer and form grid;
Deviate from described gate insulation layer one side surface at described grid and form interlayer insulating film;
Etch described interlayer insulating film and gate insulation layer, form the second etched hole in described interlayer insulating film and gate insulation layer, described second etched hole runs through described interlayer insulating film and described gate insulation layer completely, extends to the surface of described active layer;
Deviate from described gate insulation layer one side surface and described second etched hole at described interlayer insulating film and form drain electrode, described drain electrode is connected with described active layer.
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| CN112558354A (en) * | 2020-12-09 | 2021-03-26 | 华南理工大学 | Backlight substrate and display panel |
| CN112687190A (en) * | 2020-12-29 | 2021-04-20 | 武汉天马微电子有限公司 | Display panel, display device and preparation method of display panel |
| CN112687190B (en) * | 2020-12-29 | 2022-06-17 | 武汉天马微电子有限公司 | Display panel, display device and preparation method of display panel |
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