CN202839590U - Multi-cell high-power thyristor aluminum gasket structure and thyristor - Google Patents
Multi-cell high-power thyristor aluminum gasket structure and thyristor Download PDFInfo
- Publication number
- CN202839590U CN202839590U CN2012205804373U CN201220580437U CN202839590U CN 202839590 U CN202839590 U CN 202839590U CN 2012205804373 U CN2012205804373 U CN 2012205804373U CN 201220580437 U CN201220580437 U CN 201220580437U CN 202839590 U CN202839590 U CN 202839590U
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- Prior art keywords
- thyristor
- power thyristor
- cell
- same parents
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 27
- 239000004411 aluminium Substances 0.000 claims description 23
- 230000001413 cellular effect Effects 0.000 claims description 9
- 230000000295 complement effect Effects 0.000 description 4
- 230000003044 adaptive effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002362 mulch Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42308—Gate electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
The utility model provides a multi-cell high-power thyristor aluminum gasket structure and a thyristor with the same. Three arrow-shaped aluminum gaskets are in star-shaped connection with one another and encircle a central gate pole of a single cell; a multi-cell high-power thyristor body is circular; a regularly hexagonal cell is arranged in the center of the multi-cell high-power thyristor body; six similarly regularly hexagonal cells are arranged around the regularly hexagonal cell in a honeycomb manner; and six obtuse sector-shaped cells are filled into the edge of the regularly hexagonal cell. According to the technical scheme, a high-power thyristor aluminum gasket can be well matched with a negative electrode or control electrode structure of the regular hexagon and obtuse sector complementation multi-cell high-power thyristor.
Description
Technical field
The utility model belongs to the electronic devices and components field, particularly a kind of polynary born of the same parents' high-power thyristor aluminium backing structure and thyristor.
Background technology
Thyristor is the abbreviation of thyratron transistor.The shape of traditional thyristor chip is circular, and the control utmost point is in the centre of negative electrode or slightly inclined to one side.The surface breakdown voltage of thyristor is lower than puncture voltage in the body.The molding surface that improves chip can make the chip list puncture voltage near puncture voltage in its body, thereby obtains the thyristor with stronger voltage endurance capability of forward and reverse blocking voltage symmetry.The general table top that adopts mechanical angle lap to cause certain angle cleans later on protective mulch by chemical corrosion, guarantees that the table top cleaning is non-conductive, reduces electric field and avoids sparking, bears high-tension purpose thereby reach.
Existing high-power thyristor aluminium backing is unit born of the same parents' structure.Namely at present existing every pipe of high-power thyristor only has a unit, the aluminium backing that adapts with it also only has a unit certainly, with have the relative of a plurality of unit, claim that the former is unit born of the same parents' structure, the latter is multi cell structure, and concrete structure cell must be corresponding with adaptive thyristor structure cell.The suitable regular hexagon of the complementary polynary born of the same parents' high-power thyristor structure of the regular hexagon-obtuse sectors-complementary polynary born of the same parents' high-power thyristor aluminium backing structural representation of obtuse sectors.
Between the device layer negative electrode that aluminium backing is used for being installed in thyristor and the outer cathode lead-in wire, have the effects such as interconnected, support, isolation, heat radiation, slit wherein for the distribution gate lead and and gate lead between the usefulness that insulate.Existing aluminium backing is not suitable for the manufacturing of polynary born of the same parents' high-power thyristor.The concrete structure cell of thyristor aluminium backing must be corresponding with adaptive thyristor structure cell.So, only have the thyristor aluminium backing of a unit of course not to be used for the manufacturing of polynary born of the same parents' high-power thyristor.
The utility model content
The purpose of this utility model is to provide a kind of polynary born of the same parents' high-power thyristor aluminium backing structure and thyristor, and thyristor aluminium backing structure is good with the corresponding connection of polynary born of the same parents' high-power thyristor.
For achieving the above object, the technical scheme that the utility model adopts is: a kind of polynary born of the same parents' high-power thyristor aluminium backing structure, the Y-connection of three arrow shaped aluminium backings is around the central gate pole of single cellular.
A kind of thyristor of polynary born of the same parents' high-power thyristor aluminium backing structure, described polynary born of the same parents' high-power thyristor body is circular, the center arranges a Hexagon cell, 6 class Hexagon cells of the described Hexagon cell cellular layout of periphery, and its edge is filled by 6 obtuse sectors cellulars.
Described polynary born of the same parents' high-power thyristor is the complementary polynary born of the same parents KK/KA series high-power thyristor of regular hexagon-obtuse sectors.
Technical solutions of the utility model, polynary born of the same parents' high-power thyristor aluminium backing can be with the complementary polynary born of the same parents' high-power thyristor negative electrode of regular hexagon-obtuse sectors/control electrode structure coupling be fine.
Description of drawings
Fig. 1 is the thyristor structure schematic diagram of the polynary born of the same parents' high-power thyristor of the utility model aluminium backing structure.
Embodiment
Below in conjunction with Figure of description the utility model is made and to be elaborated.
As shown in Figure 1, the circular body center arranges a Hexagon cell (2), peripheral 6 the class Hexagon cells of cellular layout of Hexagon cell (2) (4), its edge is filled by 6 obtuse sectors cellulars (3), the centre of cellular is central gate pole (21), polynary born of the same parents' high-power thyristor aluminium backing structure (1) is arranged on central gate pole (21), structure is the Y-connection of three arrow shaped aluminium backings around central gate pole (21), between polynary born of the same parents' high-power thyristor aluminium backing structure (1) slit (11) be used for the distribution gate lead and and gate lead between the usefulness that insulate.Technical solutions of the utility model, the high-power thyristor aluminium backing can be with the complementary polynary born of the same parents' high-power thyristor negative electrode of regular hexagon-obtuse sectors/control electrode structure coupling be fine.
Claims (2)
1. polynary born of the same parents' high-power thyristor aluminium backing structure is characterized in that, the Y-connection of three arrow shaped aluminium backings is around the central gate pole of single cellular.
2. the thyristor of polynary born of the same parents' high-power thyristor aluminium backing structure as claimed in claim 1, it is characterized in that, described polynary born of the same parents' high-power thyristor body is circular, the center arranges a Hexagon cell, 6 class Hexagon cells of the described Hexagon cell cellular layout of periphery, its edge is filled by 6 obtuse sectors cellulars.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012205804373U CN202839590U (en) | 2012-11-05 | 2012-11-05 | Multi-cell high-power thyristor aluminum gasket structure and thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012205804373U CN202839590U (en) | 2012-11-05 | 2012-11-05 | Multi-cell high-power thyristor aluminum gasket structure and thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202839590U true CN202839590U (en) | 2013-03-27 |
Family
ID=47951230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012205804373U Expired - Fee Related CN202839590U (en) | 2012-11-05 | 2012-11-05 | Multi-cell high-power thyristor aluminum gasket structure and thyristor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202839590U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811443A (en) * | 2012-11-05 | 2014-05-21 | 杭州汉安半导体有限公司 | Multi-cell large-power thyristor aluminum spacer structure and thyristor |
-
2012
- 2012-11-05 CN CN2012205804373U patent/CN202839590U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811443A (en) * | 2012-11-05 | 2014-05-21 | 杭州汉安半导体有限公司 | Multi-cell large-power thyristor aluminum spacer structure and thyristor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP02 | Change in the address of a patent holder |
Address after: The reclamation of Hangzhou Economic Development Zone Hangzhou city Zhejiang province 310018 Street No. 479 Hangzhou Hanan Semiconductor Co. Ltd. Patentee after: Hangzhou Hanan Semiconductor Co., Ltd. Address before: Hangzhou City, Zhejiang province 310018 Hangzhou economic and Technological Development Zone No. 3 Street No. 32 Hangzhou Hanan Semiconductor Co. Ltd. Patentee before: Hangzhou Hanan Semiconductor Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130327 Termination date: 20151105 |
|
| EXPY | Termination of patent right or utility model |