CN104091841A - Gate line structure of solar cell - Google Patents
Gate line structure of solar cell Download PDFInfo
- Publication number
- CN104091841A CN104091841A CN201310110955.8A CN201310110955A CN104091841A CN 104091841 A CN104091841 A CN 104091841A CN 201310110955 A CN201310110955 A CN 201310110955A CN 104091841 A CN104091841 A CN 104091841A
- Authority
- CN
- China
- Prior art keywords
- grid line
- gate lines
- main
- solar cell
- line structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000011218 segmentation Effects 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a gate line structure of a solar cell. The gate line structure comprises a number of main gate lines, auxiliary gate lines and fine gate lines. The fine gate lines are designed between two adjacent main gate lines and are parallel to the main gate lines. Each main gate line is composed of a number of segment main gate lines which are connected in series. Two adjacent main gate lines are connected through two fine gate lines. Two adjacent auxiliary gate lines are equally spaced and run through the main gate lines. Two ends of each auxiliary gate line are completely closed. The gate line structure provided by the invention has the advantages that on the premise that the overall shading area of the gate lines is unchanged, the series resistance of solar cell slices can be reduced, and a fill factor and short circuit current are improved.
Description
Technical field
The present invention relates to crystal silicon solar energy battery technical field, relate to particularly a kind of grid line structure of solar cell.
Background technology
In the gate line electrode structure of crystal silicon solar batteries, the effect of secondary grid line is to collect photo-generated carrier, and in order to reduce series resistance, its depth-width ratio is the bigger the better.In order to strengthen the welding pulling force between solar cell main grid line and welding, existing solar cell main grid line structure mostly is rectangle strip structure, as shown in Figure 1.But because the area of main grid line is larger, the effective area of shining light of solar battery sheet is reduced, reduced electricity conversion; In addition, the required slurry of this main grid line structure is more, has increased cost of manufacture.Therefore, occurred subsequently the project organization of main grid line segmentation series connection, the main grid line as described in patent 201120324514.4 is that segmentation and adjacent two sections connect by two fine rules; Main grid line structure described in patent 201220198833.X is comprised of a plurality of block unit, and adjacent block unit is connected by two fine rules, and block unit is comprised of rectangular block and the part that narrows of being located at rectangular block two ends.These grid line design structures are playing remarkable effect aspect the manufacturing cost of reduction crystal silicon solar batteries.When reducing manufacturing cost, the unit for electrical property parameters that promotes solar battery sheet is also important research contents.
Summary of the invention
The grid line structure that the object of this invention is to provide a kind of solar cell, is issued to and reduces the series resistance of solar battery sheet, the effect that improves fill factor, curve factor and short circuit current in the prerequisite that does not increase cost of manufacture.
The technical solution used in the present invention is a kind of grid line structure of solar cell, in the situation that guaranteeing that the whole shading-area of grid line is constant, some main grid lines, secondary grid line and thin grid line, consists of.
A grid line structure for solar cell, described thin grid line design between adjacent two main grid lines, and with main grid line parallel, its width is 8～15um.
A kind of grid line structure of solar cell, described main grid line is comprised of the main grid line of two or three segmentations, every main grid line is composed in series by some segmentation main grid lines, and between adjacent two sections of main grid lines, adopt two thin grid lines to connect, adjacent two sections of main grid distance between centers of tracks equate, the length of two sections of main grid lines of head and the tail is identical, and the length of all the other each section of main grid lines is identical.
A grid line structure for solar cell, described some secondary grid line, the spacing between adjacent two equates and through main grid line, the two ends of secondary grid line are totally enclosed type, and width is 60～100um.
The invention has the beneficial effects as follows: adopt the grid line structure of technical solution of the present invention, can reduce the series resistance of solar battery sheet, improve fill factor, curve factor and short circuit current, photoelectric conversion efficiency remains unchanged or is slightly improved.
Accompanying drawing explanation
The grid line structure of the crystal silicon solar batteries sheet that Fig. 1 is traditional
The grid line structure of solar battery sheet in Fig. 2 the present invention
In figure, A represents the length of silicon chip; B represents the width of main grid line; C represents the distance between adjacent two main grid lines; D represents that submarginal main grid line is to the distance at secondary grid line edge; E represents the size of silicon chip edge chamfering; The distance of F vice grid line and silicon chip edge.
Embodiment
Below in conjunction with accompanying drawing, technical scheme of the present invention is elaborated.
The polysilicon chip that adopts 156cm * 156cm in the present embodiment is raw material, adopts the preparation technology of selective emitter.Experimental program A is former grid line design structure, and experimental program B is the grid line design structure in the present invention.
In the present embodiment, in experimental program A, main grid line is segmented, is divided into eight sections, two sections of isometric 15mm of head and the tail, middle six sections of isometric 9mm; Main grid line head and the tail end is apart from silicon chip edge 1mm, main grid linear distance silicon chip left and right sides edge 26mm, and adjacent two main grid distance between centers of tracks are 52mm; Auxiliary electrode adopt 80 wide be 50 μ m, long is 154mm, the equidistant secondary grid that are parallel to each other form.The height that records secondary grid line after printing electrode is 13 μ m.
Main grid line and to pay the design of grid line identical with experimental program A in experimental program B in the present embodiment, difference is that the adjacent two main grid distance between centers of tracks of main grid line are 26mm; Secondary grid line adopt 80 wide be 45 μ m, long is 154mm, the equidistant secondary grid that are parallel to each other form.The height that records secondary grid line after printing electrode is 15 μ m.
Experimental result shows, in grid line design option b provided by the invention, short circuit current improves 19mA, and series resistance reduces by 0.0004, and fill factor, curve factor improves 0.2%, and the photoelectric conversion efficiency of cell piece improves 0.09%.
The experimental data contrast situation of table 1 grid line design structure of the present invention and former grid line design structure
| Uoc | Isc | Rs | Rsh | FF | NCell | Irev2 | |
| A | 0.6260 | 8.621 | 0.0023 | 268.0 | 78.9 | 0.1749 | 0.057 |
| B | 0.6253 | 8.602 | 0.0027 | 203.3 | 78.7 | 0.1740 | 0.092 |
Claims (4)
1. a grid line structure for solar cell, comprises that some main grid lines, secondary grid line and thin grid line form, and it is characterized in that: described main grid line is comprised of some sections of main grid lines, and described thin grid line is distributed between adjacent two main grid lines.
2. the grid line structure of a kind of solar cell according to claim 1, is characterized in that: described thin grid line is identical with the spacing of adjacent two main grid lines, and its width is 8～15um.
3. the grid line structure of a kind of solar cell according to claim 1, is characterized in that: described main grid line is comprised of two or three segmentation main grid lines.
4. the grid line structure of a kind of solar cell according to claim 1, is characterized in that: described some secondary grid line, and the spacing of adjacent two secondary grid lines equates and through main grid line, the two ends of secondary grid line are totally enclosed type, and width is 60～100um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310110955.8A CN104091841A (en) | 2013-04-02 | 2013-04-02 | Gate line structure of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310110955.8A CN104091841A (en) | 2013-04-02 | 2013-04-02 | Gate line structure of solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104091841A true CN104091841A (en) | 2014-10-08 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310110955.8A Pending CN104091841A (en) | 2013-04-02 | 2013-04-02 | Gate line structure of solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104091841A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206758A (en) * | 2016-08-31 | 2016-12-07 | 九州方园新能源股份有限公司 | A kind of solar cell panel assembly and processing technique |
| CN110660874A (en) * | 2019-09-30 | 2020-01-07 | 通威太阳能（合肥）有限公司 | Auxiliary grid electrode and solar cell |
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| US20100201349A1 (en) * | 2009-02-06 | 2010-08-12 | Sanyo Electric Co., Ltd | Method for measuring i-v characteristics of solar cell, and solar cell |
| CN101826569A (en) * | 2010-05-13 | 2010-09-08 | 无锡尚德太阳能电力有限公司 | Solar cell, screen printing plate and solar cell module thereof |
| WO2011004758A1 (en) * | 2009-07-09 | 2011-01-13 | 株式会社シンク・ラボラトリー | Solar battery manufacturing method and solar battery |
| CN102184973A (en) * | 2010-11-11 | 2011-09-14 | 江阴浚鑫科技有限公司 | Positive electrode structure of solar battery plate |
| CN202259326U (en) * | 2011-09-01 | 2012-05-30 | 湖南红太阳新能源科技有限公司 | Novel front grid line electrode of solar cell |
| CN102687207A (en) * | 2009-10-07 | 2012-09-19 | 阪本顺 | Electrically conductive thin film structure, and manufacturing method for same |
| CN202633327U (en) * | 2012-07-05 | 2012-12-26 | 宁波尤利卡太阳能科技发展有限公司 | Facade grid line electrode of crystalline silicon solar cell |
| CN202651129U (en) * | 2012-06-13 | 2013-01-02 | 浙江鸿禧光伏科技股份有限公司 | Main grating structure of crystalline silicon solar cell |
| CN202662616U (en) * | 2012-05-04 | 2013-01-09 | 上饶光电高科技有限公司 | Main grating line structure of solar cell |
| CN202839628U (en) * | 2012-10-12 | 2013-03-27 | 横店集团东磁股份有限公司 | Front electrode structure of solar cell |
-
2013
- 2013-04-02 CN CN201310110955.8A patent/CN104091841A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100201349A1 (en) * | 2009-02-06 | 2010-08-12 | Sanyo Electric Co., Ltd | Method for measuring i-v characteristics of solar cell, and solar cell |
| WO2011004758A1 (en) * | 2009-07-09 | 2011-01-13 | 株式会社シンク・ラボラトリー | Solar battery manufacturing method and solar battery |
| CN102687207A (en) * | 2009-10-07 | 2012-09-19 | 阪本顺 | Electrically conductive thin film structure, and manufacturing method for same |
| CN101826569A (en) * | 2010-05-13 | 2010-09-08 | 无锡尚德太阳能电力有限公司 | Solar cell, screen printing plate and solar cell module thereof |
| CN102184973A (en) * | 2010-11-11 | 2011-09-14 | 江阴浚鑫科技有限公司 | Positive electrode structure of solar battery plate |
| CN202259326U (en) * | 2011-09-01 | 2012-05-30 | 湖南红太阳新能源科技有限公司 | Novel front grid line electrode of solar cell |
| CN202662616U (en) * | 2012-05-04 | 2013-01-09 | 上饶光电高科技有限公司 | Main grating line structure of solar cell |
| CN202651129U (en) * | 2012-06-13 | 2013-01-02 | 浙江鸿禧光伏科技股份有限公司 | Main grating structure of crystalline silicon solar cell |
| CN202633327U (en) * | 2012-07-05 | 2012-12-26 | 宁波尤利卡太阳能科技发展有限公司 | Facade grid line electrode of crystalline silicon solar cell |
| CN202839628U (en) * | 2012-10-12 | 2013-03-27 | 横店集团东磁股份有限公司 | Front electrode structure of solar cell |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106206758A (en) * | 2016-08-31 | 2016-12-07 | 九州方园新能源股份有限公司 | A kind of solar cell panel assembly and processing technique |
| CN110660874A (en) * | 2019-09-30 | 2020-01-07 | 通威太阳能（合肥）有限公司 | Auxiliary grid electrode and solar cell |
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Address after: The new warehouse Town Pinghu Road, Jiaxing City, 314206 children in Zhejiang Province Applicant after: ZHEJIANG FORTUNE ENERGY CO., LTD. Address before: The new warehouse Town Pinghu Road, Jiaxing City, 314206 children in Zhejiang Province Applicant before: Zhejiang Fortune Photovoltaic Co.,Ltd. |
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Free format text: CORRECT: APPLICANT; FROM: ZHEJIANG FORTUNE PHOTOVOLTAIC CO.,LTD. TO: ZHEJIANG HONGXI ENERGY CO., LTD. |
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Application publication date: 20141008 |