CN202808936U - 气相沉积装置 - Google Patents

气相沉积装置 Download PDF

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Publication number
CN202808936U
CN202808936U CN2012203384828U CN201220338482U CN202808936U CN 202808936 U CN202808936 U CN 202808936U CN 2012203384828 U CN2012203384828 U CN 2012203384828U CN 201220338482 U CN201220338482 U CN 201220338482U CN 202808936 U CN202808936 U CN 202808936U
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CN
China
Prior art keywords
substrate
plasma generator
plasma
vapor phase
injected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2012203384828U
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English (en)
Chinese (zh)
Inventor
俆祥准
许明洙
金胜勋
金镇圹
宋昇勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
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Samsung Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Display Co Ltd filed Critical Samsung Display Co Ltd
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Publication of CN202808936U publication Critical patent/CN202808936U/zh
Anticipated expiration legal-status Critical
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical Vapour Deposition (AREA)
CN2012203384828U 2011-07-13 2012-07-12 气相沉积装置 Expired - Lifetime CN202808936U (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0069489 2011-07-13
KR1020110069489A KR101288130B1 (ko) 2011-07-13 2011-07-13 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법

Publications (1)

Publication Number Publication Date
CN202808936U true CN202808936U (zh) 2013-03-20

Family

ID=46320770

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2012203384828U Expired - Lifetime CN202808936U (zh) 2011-07-13 2012-07-12 气相沉积装置
CN201210241887.4A Active CN102881550B (zh) 2011-07-13 2012-07-12 气相沉积装置和方法以及制造有机发光显示装置的方法

Family Applications After (1)

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CN201210241887.4A Active CN102881550B (zh) 2011-07-13 2012-07-12 气相沉积装置和方法以及制造有机发光显示装置的方法

Country Status (6)

Country Link
US (1) US8883267B2 (https=)
EP (1) EP2546386B1 (https=)
JP (1) JP6022242B2 (https=)
KR (1) KR101288130B1 (https=)
CN (2) CN202808936U (https=)
TW (1) TW201303068A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102881550A (zh) * 2011-07-13 2013-01-16 三星显示有限公司 气相沉积装置和方法以及制造有机发光显示装置的方法
CN107916403A (zh) * 2016-10-11 2018-04-17 三星显示有限公司 沉积装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
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DE102012219667A1 (de) * 2012-10-26 2014-04-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Aufbringen einer Aluminiumoxidschicht auf ein Halbleitersubstrat
US20140342102A1 (en) * 2013-05-20 2014-11-20 Advantech Global, Ltd Small Feature Size Fabrication Using a Shadow Mask Deposition Process
CN108149225A (zh) * 2018-02-06 2018-06-12 江苏微导纳米装备科技有限公司 一种真空反应装置及反应方法
CN109148728B (zh) * 2018-08-31 2019-10-29 昆山国显光电有限公司 一种显示面板及显示装置
JP6929265B2 (ja) 2018-12-13 2021-09-01 キヤノン株式会社 有機発光装置とその製造方法、照明装置、移動体、撮像装置、電子機器
KR102635841B1 (ko) * 2020-10-13 2024-02-13 에이피시스템 주식회사 박막 제조 장치 및 방법

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JP2648684B2 (ja) * 1993-01-13 1997-09-03 株式会社 半導体エネルギー研究所 プラズマ気相反応装置
TW349234B (en) * 1996-07-15 1999-01-01 Applied Materials Inc RF plasma reactor with hybrid conductor and multi-radius dome ceiling
JP4089113B2 (ja) * 1999-12-28 2008-05-28 株式会社Ｉｈｉ 薄膜作成装置
US6949450B2 (en) 2000-12-06 2005-09-27 Novellus Systems, Inc. Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
JP4770029B2 (ja) * 2001-01-22 2011-09-07 株式会社Ｉｈｉ プラズマｃｖｄ装置及び太陽電池の製造方法
US6713127B2 (en) * 2001-12-28 2004-03-30 Applied Materials, Inc. Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD
JP2003328126A (ja) * 2002-05-09 2003-11-19 Konica Minolta Holdings Inc パターニング方法及び製膜装置
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KR101288130B1 (ko) * 2011-07-13 2013-07-19 삼성디스플레이 주식회사 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102881550A (zh) * 2011-07-13 2013-01-16 三星显示有限公司 气相沉积装置和方法以及制造有机发光显示装置的方法
CN102881550B (zh) * 2011-07-13 2017-03-01 三星显示有限公司 气相沉积装置和方法以及制造有机发光显示装置的方法
CN107916403A (zh) * 2016-10-11 2018-04-17 三星显示有限公司 沉积装置
CN107916403B (zh) * 2016-10-11 2022-05-03 三星显示有限公司 沉积装置

Also Published As

Publication number Publication date
JP2013019053A (ja) 2013-01-31
CN102881550A (zh) 2013-01-16
US8883267B2 (en) 2014-11-11
TW201303068A (zh) 2013-01-16
KR20130008853A (ko) 2013-01-23
EP2546386B1 (en) 2018-01-03
CN102881550B (zh) 2017-03-01
EP2546386A1 (en) 2013-01-16
JP6022242B2 (ja) 2016-11-09
US20130017343A1 (en) 2013-01-17
KR101288130B1 (ko) 2013-07-19

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Granted publication date: 20130320