CN202772119U - Semiconductor deposition equipment structure which can be easily cleaned - Google Patents
Semiconductor deposition equipment structure which can be easily cleaned Download PDFInfo
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- CN202772119U CN202772119U CN 201220437873 CN201220437873U CN202772119U CN 202772119 U CN202772119 U CN 202772119U CN 201220437873 CN201220437873 CN 201220437873 CN 201220437873 U CN201220437873 U CN 201220437873U CN 202772119 U CN202772119 U CN 202772119U
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- carrying
- bearing
- disk
- semiconductor deposition
- heater
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Abstract
The utility model provides a semiconductor deposition equipment structure which can be easily cleaned. The semiconductor deposition equipment structure comprises: a bearing structure, wherein the bearing structure comprises a bearing disk and six pairs of bearing rods which are vertically fixed on the sidewall of the bearing disk and used for bearing a wafer, and the included angle between every two neighboring bearing rods is 60 degrees; a heater surrounding the bearing disk, wherein the surface of the heater is provided with a plurality of accommodating grooves corresponding to the bearing rods; and a rotary supporting device which is connected to the central region of the bottom of the bearing disk for driving the up and down movement of the bearing disk and driving the rotation of the bearing disk around the central shaft of the rotary supporting device, wherein the bearing rods are fixed by the rotary supporting device beyond the upper surface of the heater, and the included angle between each bearing rod and the corresponding accommodating groove thereof is in the range of 20 degrees to 40 degrees. The semiconductor deposition equipment structure of the utility model can be used to effectively clean the heater, avoid adverse effects on wafers caused by the residual impurities in the accommodating grooves and the generated particles, facilitate the subsequent process flow, and improve the yield of products.
Description
Technical field
The utility model relates to a kind of semi-conductor processing equipment, particularly relates to a kind of semiconductor deposition device structure of being convenient to clean.
Background technology
Along with the fast development of semiconductor technology, constantly the dwindling of the characteristic size of semiconductor device, its device performance is more and more higher, and the requirement of device manufacturing environment has also been reached unprecedented height.Impurity in the semiconductor is very large on the impact of resistivity, and when mixing trace impurity in the semiconductor, near the cycle potential field the foreign atom is interfered and forms additional bound state, produces the impurity energy level that adds in the forbidden band.In order to satisfy the demand on the volume production, semi-conductive electrically must be measurable and stable, therefore comprises the purity of alloy and all necessary strict demands of quality of semiconductor die lattice structure.
Semiconductor technology refers to the various technology of semiconductor machining, comprises the technology such as growing technology, thin film deposition, photoetching, etching, doping techniques and process integration of wafer.Deposition technique is a very important technology in the manufacture of semiconductor technique.Wherein, chemical vapour deposition (CVD) (CVD) is the technology that is used for depositing multiple materials that is most widely used in the semi-conductor industry, and it can be used for depositing large-scale insulating material, most metals material and metal alloy compositions.In theory, chemical vapour deposition technique is that two or more gaseous state raw material are imported in the reative cell, and then chemical reaction occurs each other for they, forms a kind of new material, deposits on the wafer surface.Chemical vapour deposition (CVD) comprises aumospheric pressure cvd, plasma auxiliary chemical deposition, laser assisted chemical deposition, metallo-organic compound deposition etc.
The cleanliness factor of wafer surface is a key factor that affects chemical vapour deposition (CVD).General chemical vapor deposition method is carried out in deposition chamber, must clean deposition chamber first before technique is carried out, in order to avoid the indoor residual impurity of depositing operation or particle cause bad impact to wafer.The depositing device of general structure can run into variety of problems and can not reach required requirement when cleaning, cause easily the decline of product yield, is unfavorable for saving cost.
Therefore, provide a kind of semiconductor deposition device structure of being convenient to clean the real necessity that belongs to.
The utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of semiconductor deposition device structure of being convenient to clean, and be used for to solve that prior art depositing device structure is still residual after cleaning to be had impurity or particle and wafer is caused dysgenic problem.
Reach for achieving the above object other relevant purposes, the utility model provides a kind of semiconductor deposition device structure of being convenient to clean, and described semiconductor deposition device structure comprises at least:
Bearing structure, described bearing structure comprise a carrying disk and vertically are fixed in six couple of this carrying disk sidewall for the carrying rod of carrying wafer, and the angle between adjacent two couple carrying rod is 60 degree;
Be surrounded on described carrying disk heater all around, and described heater surfaces has accepting groove a plurality of and that respectively this carrying rod is corresponding;
Be connected in described carrying disk bottom central area, be used for driving described carrying disk and move up and down and drive the rotating supporting device that this carrying disk rotates along its central shaft;
Wherein, described carrying rod is fixed to the upper surface that exceeds described heater by described rotating supporting device, and is the positions of 20～40 degree with the angle of the accepting groove corresponding with it.
As a preferred version of the semiconductor deposition device structure of being convenient to clean of the present utility model, it is the position of 30 degree that described carrying rod is fixed to the angle of the accepting groove corresponding with it by described rotating supporting device.
As a preferred version of the semiconductor deposition device structure of being convenient to clean of the present utility model, the cross sectional shape of described carrying rod is rectangle.
Further, described accepting groove is rectangular channel, and the width of described accepting groove is greater than the width of described carrying rod, and the degree of depth of described accepting groove is greater than the height of described carrying rod.
In the semiconductor deposition device structure of being convenient to clean of the present utility model, described carrying disk is ceramic disk, and described carrying rod is ceramic rod.
In the semiconductor deposition device structure of being convenient to clean of the present utility model, the surface of described heater is the aluminium dish.
As mentioned above, the semiconductor deposition device structure of being convenient to clean of the present utility model, have following beneficial effect: the utility model comprises bearing structure, described bearing structure comprises a carrying disk and vertically is fixed in six couple of this carrying disk sidewall for the carrying rod of carrying wafer, and the angle between adjacent two couple carrying rod is 60 degree; Be surrounded on described carrying disk heater all around, and described heater surfaces has accepting groove a plurality of and that respectively this carrying rod is corresponding; Be connected in described carrying disk bottom central area, be used for driving described carrying disk and move up and down and drive the rotating supporting device that this carrying disk rotates along its central shaft; Wherein, described carrying rod is fixed to the upper surface that exceeds described heater by described rotating supporting device, and is the positions of 20～40 degree with the angle of the accepting groove corresponding with it.The utility model will carry rod and be fixed in and exceed heater surfaces and have certain angle with corresponding accepting groove, accepting groove is exposed fully, can effectively clear up it, avoided residual in accepting groove of impurity and produce particle and wafer caused harmful effect, be conducive to follow-up technological process, increase the yield of product.
Description of drawings
Fig. 1 is shown as the planar structure schematic diagram of the semiconductor deposition device structure of being convenient to clean of the present utility model when normal operation.
Fig. 2 is shown as the cross section structure schematic diagram of the semiconductor deposition device structure of being convenient to clean of the present utility model when normal operation.
Fig. 3 is shown as the planar structure schematic diagram of the semiconductor deposition device structure of being convenient to clean of the present utility model when cleaning.
Fig. 4 is shown as the cross section structure schematic diagram of the semiconductor deposition device structure of being convenient to clean of the present utility model when cleaning.
Fig. 5 is shown as the cleaning schematic flow sheet of the semiconductor deposition device structure of being convenient to clean of the present utility model.
The element numbers explanation
101 carrying disks
102 carrying rods
11 heaters
111 accepting grooves
12 rotating supporting devices
S1～S4 step 1)～step 4)
Embodiment
Below by specific instantiation execution mode of the present utility model is described, those skilled in the art can understand other advantages of the present utility model and effect easily by the disclosed content of this specification.The utility model can also be implemented or be used by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change under the spirit of the present utility model not deviating from.
See also Fig. 1～Fig. 4.Need to prove, the diagram that provides in the present embodiment only illustrates basic conception of the present utility model in a schematic way, satisfy only show in graphic with the utility model in relevant assembly but not component count, shape and size drafting when implementing according to reality, kenel, quantity and the ratio of each assembly can be a kind of random change during its actual enforcement, and its assembly layout kenel also may be more complicated.
Such as Fig. 3～shown in Figure 4, present embodiment provides a kind of semiconductor deposition device structure of being convenient to clean, and described semiconductor deposition device structure comprises at least:
Bearing structure, described bearing structure comprise a carrying disk 101 and vertically are fixed in six couple of these carrying disk 101 sidewalls for the carrying rod 102 of carrying wafer, and the angle between adjacent two couple carrying rod 102 is 60 degree;
Be surrounded on the heater 11 around the described carrying disk 101, and described heater 11 surfaces have accepting groove 111 corresponding to a plurality of and this carrying respectively excellent 102;
Be connected in described carrying disk 101 bottom centre zone, be used for driving 101 times movements of described carrying disk and drive this carrying disk 101 along the rotating supporting device 12 of its central shaft rotation;
Wherein, described carrying rod 102 is fixed to the upper surface that exceeds described heater 11 by described rotating supporting device 12, and is the positions of 20～40 degree with the angle of the accepting groove 111 corresponding with it, shown in the α among Fig. 3.
Because described rotating supporting device 12 can only rotate 60 degree in the situation of normal operation at every turn, the utility model is by revising its control device, can under other angle, stopping operating, so that described accepting groove 111 exposes fully, improved widely the effect of cleaning.In the present embodiment, to be fixed to the angle of the accepting groove 111 corresponding with it by described rotating supporting device 12 be the positions of 30 degree to described carrying rod 102.The benefit that is fixed in the position of 30 degree is, as long as this rotating supporting device 12 of control just can revert to originally the position corresponding with this accepting groove respectively 111 repeating to turn over one time 30 degree, reduced widely the difficulty of operation, be conducive to improve the speed of cleaning and improve the efficient of producing.
Described carrying disk 101 is ceramic disk, and described carrying rod 102 is ceramic rod.Because pottery has preferably stability and thermal endurance, so Ceramics can be conducive to the stable of whole deposition chamber as the making material that carries disk 101 and carrying rod 102.Certainly, in other embodiments, described carrying disk 101 and carrying rod 102 also can be all heat-resistant oxidized rigid materials of other expection, such as materials such as aluminium oxide or zirconias.
Has a default distance between two carrying rods 102 in the every pair of carrying rod 102, this predeterminable range can guarantee that wafer can stably be positioned in excellent 102 pairs of this carrying.Angle between adjacent two couples carrying rod 102 is 60 degree, refers to that the angle that adjacent two couple is carried between the center line of rod 102 is 60 degree.
In order to guarantee wafer stablizing on carrying rod 102, the cross sectional shape of described carrying rod 102 is rectangle, to increase wafer and the contact area of carrying rod 102, prevents from affecting owing to the movement of wafer the carrying out of subsequent technique.
Further, described accepting groove 111 is rectangular channel, and the width of described accepting groove 111 is greater than the width of described carrying rod 102, and the degree of depth of described accepting groove 111 is greater than the height of described carrying rod 102, can will respectively should carrying excellent 102 place fully in wherein to reach.
The surface of described heater 11 generally is to have better heat conductivility and more stable material, and such as aluminium, copper, aluminium alloy etc., in the present embodiment, the surface of described heater 11 is the aluminium dish.
The below introduces operation principle of the present utility model.
Such as Fig. 1～shown in Figure 2, at first, under general state, under operating state or the state that quits work, described carrying disk 101 is in the state that is put down, and respectively this carrying rod 102 is all placed in the accepting groove 111 of correspondence.If under this state, heater 11 surfaces are cleared up, because the barrier effect of carrying rod 102, respectively be difficult to be cleaned in this accepting groove 111, cause easily the residual of impurity or particle after the cleaning, in follow-up technological process, these impurity or particle are transferred on the wafer easily, affect the cleanliness factor of wafer, if the excessive wafer that also might cause of residual particles can not entirely be positioned over heater 11 surfaces, cause the unstable of technique, affect the performance of product.
Such as Fig. 3～shown in Figure 4, this use is novel to be fixed to the upper surface that exceeds described heater 11 to carrying rod 102 by control rotating supporting device 12 with each, and be the positions of 20～40 degree with the angle of the accepting groove 111 corresponding with it, so that each accepting groove 111 is exposed, it cleared up.This structure can effectively be removed accepting groove 111 interior residual impurity or particles.
In a concrete implementation process, as shown in Figure 5, the cleaning of depositing device be may further comprise the steps at least:
At first carry out step 1) S1, will carry rod 102 by control rotating supporting device 12 and prop to exceeding described heater 11 surfaces;
Then carry out step 2) S2, will carry rod 102 rotations 20～40 degree, this accepting groove 111 exposes fully to incite somebody to action respectively;
Then carry out step 3) S3, deposition chamber is passed into C
2F
6, and carry out plasma treatment;
Carry out at last step 4) S4, stop to pass into C
2F
6, then pass into N
2, extract at last the CH that produces out, to finish cleaning.
In sum, the semiconductor deposition device structure of being convenient to clean of the present utility model, comprise bearing structure, described bearing structure comprises a carrying disk 101 and vertically is fixed in six couple of these carrying disk 101 sidewalls for the carrying rod 102 of carrying wafer, and the angle between adjacent two couple carrying rod 102 is 60 degree; Be surrounded on the heater 11 around the described carrying disk 101, and described heater 11 surfaces have accepting groove 111 corresponding to a plurality of and this carrying respectively excellent 102; Be connected in described carrying disk 101 bottom centre zone, be used for driving described carrying disk 101 and move up and down and drive this carrying disk 101 along the rotating supporting device 12 of its central shaft rotation; Wherein, described carrying rod 102 is fixed to the upper surface that exceeds described heater 11 by described rotating supporting device 12, and is the positions of 20～40 degree with the angle of the accepting groove 111 corresponding with it.The utility model will carry rod 102 and be fixed in and exceed heater 11 surface and have certain angle with corresponding accepting groove 111, accepting groove 111 is exposed fully, can effectively clear up it, avoided residual in the accepting groove 111 of impurity and produce particle and wafer is caused harmful effect, be conducive to follow-up technological process, increase the yield of product.So the utility model has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
Above-described embodiment is illustrative principle of the present utility model and effect thereof only, but not is used for restriction the utility model.Any person skilled in the art scholar all can be under spirit of the present utility model and category, and above-described embodiment is modified or changed.Therefore, have in the technical field under such as and know that usually the knowledgeable modifies or changes not breaking away from all equivalences of finishing under spirit that the utility model discloses and the technological thought, must be contained by claim of the present utility model.
Claims (6)
1. a semiconductor deposition device structure of being convenient to clean is characterized in that, described semiconductor deposition device structure comprises at least:
Bearing structure, described bearing structure comprise a carrying disk and vertically are fixed in six couple of this carrying disk sidewall for the carrying rod of carrying wafer, and the angle between adjacent two couple carrying rod is 60 degree;
Be surrounded on described carrying disk heater all around, and described heater surfaces has accepting groove a plurality of and that respectively this carrying rod is corresponding;
Be connected in described carrying disk bottom central area, be used for driving described carrying disk and move up and down and drive the rotating supporting device that this carrying disk rotates along its central shaft;
Wherein, described carrying rod is fixed to the upper surface that exceeds described heater by described rotating supporting device, and is the positions of 20～40 degree with the angle of the accepting groove corresponding with it.
2. the semiconductor deposition device structure of being convenient to clean according to claim 1 is characterized in that: it is the positions of 30 degree that described carrying rod is fixed to the angle of the accepting groove corresponding with it by described rotating supporting device.
3. the semiconductor deposition device structure of being convenient to clean according to claim 1 is characterized in that: the cross sectional shape of described carrying rod is rectangle.
4. the semiconductor deposition device structure of being convenient to clean according to claim 3, it is characterized in that: described accepting groove is rectangular channel, and the width of described accepting groove is greater than the width of described carrying rod, the degree of depth of described accepting groove is greater than the height of described carrying rod.
5. the semiconductor deposition device structure of being convenient to clean according to claim 1, it is characterized in that: described carrying disk is ceramic disk, described carrying rod is ceramic rod.
6. the semiconductor deposition device structure of being convenient to clean according to claim 1, it is characterized in that: the surface of described heater is the aluminium dish.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220437873 CN202772119U (en) | 2012-08-30 | 2012-08-30 | Semiconductor deposition equipment structure which can be easily cleaned |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220437873 CN202772119U (en) | 2012-08-30 | 2012-08-30 | Semiconductor deposition equipment structure which can be easily cleaned |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202772119U true CN202772119U (en) | 2013-03-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220437873 Expired - Fee Related CN202772119U (en) | 2012-08-30 | 2012-08-30 | Semiconductor deposition equipment structure which can be easily cleaned |
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| Country | Link |
|---|---|
| CN (1) | CN202772119U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104253075A (en) * | 2013-06-26 | 2014-12-31 | 上海华虹宏力半导体制造有限公司 | Wafer transmission device for chemical vapor deposition |
| CN110000161A (en) * | 2017-12-28 | 2019-07-12 | 美光科技公司 | For cleaning component and the system and associated method that are used to form the tool of semiconductor device |
| CN111139458A (en) * | 2020-01-02 | 2020-05-12 | 长江存储科技有限责任公司 | Deposition device |
-
2012
- 2012-08-30 CN CN 201220437873 patent/CN202772119U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104253075A (en) * | 2013-06-26 | 2014-12-31 | 上海华虹宏力半导体制造有限公司 | Wafer transmission device for chemical vapor deposition |
| CN110000161A (en) * | 2017-12-28 | 2019-07-12 | 美光科技公司 | For cleaning component and the system and associated method that are used to form the tool of semiconductor device |
| CN111139458A (en) * | 2020-01-02 | 2020-05-12 | 长江存储科技有限责任公司 | Deposition device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130306 Termination date: 20180830 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |