CN202721122U - 一种可调显色指数的led双晶贴片 - Google Patents

一种可调显色指数的led双晶贴片 Download PDF

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CN202721122U
CN202721122U CN2012203098239U CN201220309823U CN202721122U CN 202721122 U CN202721122 U CN 202721122U CN 2012203098239 U CN2012203098239 U CN 2012203098239U CN 201220309823 U CN201220309823 U CN 201220309823U CN 202721122 U CN202721122 U CN 202721122U
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郑剑飞
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Xiamen Dacol Photoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

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Abstract

本实用新型涉及LED双晶贴片。本实用新型的一种可调显色指数的LED双晶贴片，包括第一LED芯片、第二LED芯片、承载上述LED芯片的支架、以及包覆上述LED芯片和部分支架的封装体。所述支架上设有放置LED芯片的杯碗、将LED芯片的正负极通过金线引出的正导电脚和负导电脚。所述杯碗内所述杯碗内设有金属热沉、镀银层，所述金属热沉位于镀银层之下并与其在结构上相配合，所述第一LED芯片、第二LED芯片位于镀银层之上并与其在结构上相配合，所述镀银层分别与第一LED芯片、第二LED芯片的正负极连接。所述第一LED芯片和第二LED芯片在支架上的放置呈对称结构，所述第一LED芯片是蓝光LED芯片，第二LED芯片是红光LED芯片，其表面涂覆黄色荧光粉或绿色荧光粉。

Description

一种可调显色指数的LED双晶贴片
技术领域
本实用新型涉及LED双晶贴片，具体涉及一种可调显色指数的LED双晶贴片。
背景技术
目前，市场上LED双晶结构设计的产品较多，由双蓝光芯片的较多，为了达到高显色指数大部分是用蓝光芯片搭配黄色荧光粉、绿色荧光粉、红色荧光粉来制备高显色性LED贴片灯，但是由于目前红粉的转换效率底，导致光通量低下。较难满足市场需求。市场上也有用RGB三晶结来调设高显色性LED贴片灯，但是其驱动电路复杂，需要通过调整三颗芯片的驱动电流来控制显色指数，成本较高。
可调显色指数的LED双晶光源同其他所有封装方式的LED光源一样，都需要解决光效、可靠性和成本三者的问题：光效是光通量与其消耗特定电能功率的比值；可靠性往往由光源散热性能决定；而成本主要体现在原材料选择方面，此三者发生相互制衡。在不同的需求下可能需要突出某方面的优化效果。比如，在成本和可靠性保持的情况下，实现高光通量，高显色性，这样的议题在大量LED光源生产中显得尤其重要。作为商品，实现其成本下的性能控制，是一种必然的诉求。所以，如何在维持较好的成本和可靠性的同时，提高贴片LED光源的光效和显色性是这类贴片LED封装结构设计的一个必然需求。
实用新型内容
本实用新型所要解决的技术方案是，提供一种可调显色指数的LED双晶贴片，通过使用红光LED芯片、蓝光LED芯片、以及与黄色荧光粉或绿色荧光粉的结合，从而提高显色性；并通过调整红光LED芯片的驱动电流即可调整该LED双晶贴片光源的显色指数，有效地简化了电路的设计，进而达到降低成本的目的。
为了解决上述技术问题，本实用新型的一种可调显色指数的LED双晶贴片，包括第一LED芯片、第二LED芯片、承载上述LED芯片的支架、以及包覆上述LED芯片和部分支架的封装体。所述支架上设有放置LED芯片的杯碗、将LED芯片的正负极通过金线引出的正导电脚和负导电脚。所述杯碗内设有金属热沉、镀银层，所述金属热沉位于镀银层之下并与其在结构上相配合，所述第一LED芯片、第二LED芯片位于镀银层之上并与其在结构上相配合，所述镀银层分别与第一LED芯片、第二LED芯片的正负极连接。
其中，第一LED芯片和第二LED芯片在支架上的放置呈对称结构。第一LED芯片和第二LED芯片的内侧相距范围为0.50-0.70mm，其分别距离金属热沉边缘的距离范围为0.05-0.10mm。第一LED芯片是蓝光LED芯片，第二LED芯片是红光LED芯片，该两颗LED芯片的固晶位置在同一平面上，并在其表面涂覆黄色荧光粉或绿色荧光粉，组成三种或四种连续的光谱，显色指数高达95。蓝光LED芯片在额定电流驱动的情况下，通过调整红光LED芯片的驱动电流，可以使LED贴片的显色指数变化，当所组成的光谱比例为蓝：绿：红为1:3:6时显色效果最佳，从而实现高显色性的LED封装工艺。所述蓝光LED芯片驱动电流为额定电流，红光LED芯片的驱动电流可以从零到额定电流。
进一步的，镀银层配合于金属热沉的表面，与第一LED芯片、第二LED芯片的正负电极连接，并具有与上述LED芯片的底部相结合的固定部分。镀银层是采用化学电镀法将其制成镜面光亮状的镜面亮银，从而使LED芯片的光线充分反射，提高了整个封装结构的光效。
进一步的，金属热沉是使用C194铜材料制成，位于所述固晶位置的金属和焊线的位置，具有与第一LED芯片、第二LED芯片底部对应的镀银层相配合的下底面。
本实用新型采用上述结构，具有如下优点：
1. 第一LED芯片、第二LED芯片分别由蓝光和红光LED芯片组成，并搭配黄色荧光粉或绿色荧光粉可组成四个连续光谱，其显色性可以达到95；
2.镀银层的镜面光银将源自两颗LED芯片的光线充分反射，提高了整个封装结构的光效，实现了高光效、高可靠性的LED封装工艺；
3.将蓝光LED芯片用额定电流驱动，通过调整红光LED芯片的驱动电流以控制LED芯片的显色指数和色温，该方式有效的降低了电路设计成本。
附图说明
图1是本实用新型的实施例的俯视示意图。
具体实施方式
现结合附图和具体实施方式对本实用新型进一步说明。
作为本实用新型的一个优选的实施例，如图1所示，本实用新型的一种可调显色指数的LED双晶贴片，包括第一LED芯片1、第二LED芯片2、承载上述LED芯片的支架4、以及包覆上述LED芯片和部分支架的封装体。所述支架4上设有放置LED芯片的杯碗3、将LED芯片的正负极通过金线5引出的正导电脚和负导电脚、以及隔层6。所述杯碗3内设有金属热沉、镀银层，所述金属热沉位于镀银层之下并与其在结构上相配合，所述第一LED芯片1、第二LED芯片2位于镀银层之上并与其在结构上相配合，所述镀银层分别与第一LED芯片1、第二LED芯片2的正负极连接。
第一LED芯片1和第二LED芯片2在支架4上的放置位于同一平面上，且呈对称结构。第一LED芯片和第二LED芯片的内侧相距d的范围为0.50-0.70mm，其分别距离金属热沉边缘的距离范围为0.05-0.10mm。第一LED芯片1是蓝光LED芯片，第二LED芯片2是红光LED芯片，在其表面涂覆黄色荧光粉或绿色荧光粉，组成三种或四种连续的光谱，显色指数高达95。蓝光LED芯片在额定电流驱动的情况下，通过调整红光LED芯片的驱动电流，可以使LED贴片的显色指数变化，当所组成的光谱比例为蓝：绿：红为1:3:6时显色效果最佳，从而实现高显色性的LED封装工艺。所述蓝光LED芯片驱动电流为额定电流，红光LED芯片的驱动电流可以从零到额定电流。
镀银层配合于金属热沉的表面，与第一LED芯片1、第二LED芯片2的正负电极连接，并具有与上述LED芯片的底部相结合的固定部分。镀银层是采用化学电镀法将其制成镜面光亮状的镜面亮银，从而使LED芯片的光线充分反射，提高了整个封装结构的光效。
金属热沉是使用C194铜材料制成，位于所述固晶位置的金属和焊线的位置，具有与第一LED芯片1、第二LED芯片2底部对应的镀银层相配合的下底面。
尽管结合优选实施方案具体展示和介绍了本实用新型，但所属领域的技术人员应该明白，在不脱离所附权利要求书所限定的本实用新型的精神和范围内，在形式上和细节上可以对本实用新型做出各种变化，均为本实用新型的保护范围。 

Claims (4)

1.一种可调显色指数的LED双晶贴片，其特征在于：包括第一LED芯片、第二LED芯片、承载上述LED芯片的支架、以及包覆上述LED芯片和部分支架的封装体；
所述支架上设有放置LED芯片的杯碗、将LED芯片的正负极通过金线引出的正导电脚和负导电脚；
所述杯碗内设有金属热沉、镀银层，所述金属热沉位于镀银层之下并与其在结构上相配合，所述第一LED芯片、第二LED芯片位于镀银层之上并与其在结构上相配合，所述镀银层分别与第一LED芯片、第二LED芯片的正负极连接；
所述第一LED芯片和第二LED芯片在支架上的放置呈对称结构，所述第一LED芯片是蓝光LED芯片，第二LED芯片是红光LED芯片，其表面涂覆黄色荧光粉或绿色荧光粉。
2.根据权利要求1所述的可调显色指数的LED双晶贴片，其特征在于：所述第一LED芯片和第二LED芯片的内侧相距范围为0.50-0.70mm。
3.根据权利要求1所述的可调显色指数的LED双晶贴片，其特征在于：所述镀银层是采用化学电镀法将其制成镜面光亮状的镜面亮银。
4.根据权利要求1所述的可调显色指数的LED双晶贴片，其特征在于：所述金属热沉是使用C194铜材料制成。
CN2012203098239U 2012-06-29 2012-06-29 一种可调显色指数的led双晶贴片 Expired - Fee Related CN202721122U (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928449A (zh) * 2014-03-28 2014-07-16 山东明华光电科技有限公司 蓝白双晶大功率led
CN109119517A (zh) * 2018-09-12 2019-01-01 宁波升谱光电股份有限公司 一种贴片式led及其制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928449A (zh) * 2014-03-28 2014-07-16 山东明华光电科技有限公司 蓝白双晶大功率led
CN109119517A (zh) * 2018-09-12 2019-01-01 宁波升谱光电股份有限公司 一种贴片式led及其制备方法

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