CN202712253U - 高集成高光效的二极体电路结构及二极体 - Google Patents

高集成高光效的二极体电路结构及二极体 Download PDF

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CN202712253U
CN202712253U CN2012201089485U CN201220108948U CN202712253U CN 202712253 U CN202712253 U CN 202712253U CN 2012201089485 U CN2012201089485 U CN 2012201089485U CN 201220108948 U CN201220108948 U CN 201220108948U CN 202712253 U CN202712253 U CN 202712253U
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diode
wafer
circuit structure
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light efficiency
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罗嗣辉
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Ao Qisi Science and Technology Co., Ltd.
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GUANGDONG OUTRACE TECHNOLOGY Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Abstract

本实用新型的一种高集成高光效的二极体电路结构及二极体，其特征在于：所述的发光二极体晶片包括并联每组由至少二个相串联的小功率晶片串高集成封装方式构成；本实用新型采用多晶串并集成，具有高集成和高光效的技术效果。

Description

高集成高光效的二极体电路结构及二极体
技术领域
本实用新型涉及一种发光二极体，更具体地说，涉及一种高集成高光效的二极体电路结构。 
背景技术
随着电子技术的进步，利用LED照明灯具也越来越普遍，由于LED是利用半导体通电后的发光性能发光的，由于LED是一种寿命长、功率低、无辐射的绿色环保光源，因此被广泛应用于背光源、显示屏、交通信号灯、城市亮化等领域，在未来更将取代白炽灯、节能灯照明应用，成为新一代照明光源，广泛应用于室内外普通照明及特殊照明。 
传统的发光二极体为达到高亮度而采用大功率晶片，当前大功率二极体封装技术主要是单晶大功率封装，其虽可以获得高的光通量，但其光效低，且发热量高，发热量集中在一个晶片上，对晶片的可靠性及寿命均有较大的影响，同时当前发光体二极体结构其热通道与电通道为共用一个通道，甚至有的设计并没有独立导热通道，而电通道主要是靠键合金线将晶片正负电极与支架焊脚连接起来，所以晶片发出的热量会对二极体电路结构有较大的热影响，影响到金线与支架焊接的可靠性，及因为没有独立的导热通道，对晶片的光衰也会有很大的影响。因此，如何解决上述问题，成为亟待解决的问题。 
实用新型内容
本实用新型旨在提供一种采用多晶串并集成的高集成高光效的二极体电路结构。 
为解决上述技述问题，本实用新型的一种高集成高光效的二极体电路结构，发光二极体晶片包括多组小功率晶片串相并联高集成封装方式构成，每组小功率晶片串包括至少二个相串联的小功率晶片。 
上述的一种高集成高光效的二极体电路结构，每组小功率晶片串的小功率晶片的为二～四个。 
上述的一种高集成高光效的二极体电路结构，发光二极体晶片由二至六组小功率晶片串相并联构成。采用小功率晶片，高集成度封装方式，并实现新型LED贴片热电分离设计的发光二极体，小功率晶片和高集成度封装实现获得更高的光通量及高光效性能。 
一种高集成高光效的二极体，包括贴片式支架、发光二极体晶片和金线，支架上表面形成凹杯，支架的左右两侧设有独立导通至凹杯两侧中的导电通道、底面设有中部通至凹杯中部的导热通道，发光二极体晶片通过导热绝缘胶与导热通道相贴合、其两极分别通过金线与导电通道电连接，凹杯中灌封由硅胶与荧光粉混合体构成的荧光胶体。热电分离设计使LED晶片工作时散发的热量能及时独立地传导到散热基板上，减小热量对第二点焊接可靠性及晶片寿命的影响。 
本实用新型采用上述结构后，一种高集成高光效的热电分离设计的功率型发光二极体，采用小功率晶片，串并后的晶片功率不超过1W，通过串并的高集成封装方式获得高光通量及高光效，解决目前功率型发光二极体光效普遍不高的问题。 
同时采用热电分离设计，具有独立的导电通道及导热通道的新型LED贴片支架，将热与电有效区分独立，解决晶片发光时的热量对金线与支架焊接品质的影响，保证产品的焊接可靠性。独立的导热通道能将热量及时有效的热量散出，减小热量对晶片寿命的影响，解决当前晶片热量没有独立的导热通道，热量不能有效散出，对晶片寿命及品质的影响。 
本实用新型与现有技术相比具有结构简单、制造成本低的优点，具有良好的推广价值。 
附图说明
下面将结合附图中的具体实施例对本实用新型作进一步地详细说明，以便更清楚直观地理解其实用新型实质，但不构成对本实用新型的任何限制。 
图1为本实用新型其中一种实施例的结构示意图； 
图2为本实用新型另一种实施例的结构示意图； 
图3为本实用新型再一种实施例的结构示意图； 
图4为本实用新型具体实施产品的剖面结构剖面图； 
图5为图1的俯视结构示意图。 
图中：31为贴片式支架，31a为凹杯，31b、31c为导电通道，31d为导热通道，31e为导热绝缘胶，31f为荧光胶体，32为发光二极体晶片，33为金线。 
具体实施方式
如图1～图3所示：一种高集成高光效的二极体电路结构，发光二极体晶片32包括 多组小功率晶片串相并联高集成封装方式构成，每组小功率晶片串包括至少二个相串联的小功率晶片。 
每组小功率晶片串的小功率晶片的为二～四个。 
发光二极体晶片32由二至六组小功率晶片串相并联构成。 
如图4和图5所示，本实用新型在具体实施时，一种高集成高光效的二极体，包括二极体电路结构，还包括贴片式支架31、发光二极体晶片32和金线33，支架31上表面形成凹杯31a，支架31的左右两侧设有独立导至通至凹杯31a两侧中的导电通道31b、31c、底面设有中部通至凹杯31a中部的导热通道31d，发光二极体晶片32通过导热绝缘胶31e与导热通道31d相贴合、其两极分别通过金线33与导电通道31b、31c电连接，凹杯31a中灌封由硅胶与荧光粉混合体构成的荧光胶体31f。 
综上所述，本实用新型已如说明书及图示内容，制成实际样品且经多次使用测试，从使用测试的效果看，可证明本实用新型能达到其所预期之目的，实用性价值乃无庸置疑。以上所举实施例仅用来方便举例说明本实用新型，并非对本实用新型作任何形式上的限制，任何所属技术领域中具有通常知识者，若在不脱离本实用新型所提技术特征的范围内，利用本实用新型所揭示技术内容所作出局部更动或修饰的等效实施例，并且未脱离本实用新型的技术特征内容，均仍属于本实用新型技术特征的范围。 

Claims (4)

1.一种高集成高光效的二极体电路结构，其特征在于：发光二极体晶片(32)包括多组小功率晶片串相并联高集成封装方式构成，每组小功率晶片串包括至少二个相串联的小功率晶片。 
2.根据权利要求1所述的一种高集成高光效的二极体电路结构，其特征在于：每组小功率晶片串的小功率晶片的为二～四个。 
3.根据权利要求1所述的一种高集成高光效的二极体电路结构，其特征在于：发光二极体晶片(32)由二至六组小功率晶片串相并联构成。 
4.一种高集成高光效的二极体，包括如上述任一权利要求所述的二极体电路结构。 
CN2012201089485U 2012-03-13 2012-03-13 高集成高光效的二极体电路结构及二极体 Expired - Fee Related CN202712253U (zh)

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